WO2004023612A1 - Amplificateur de lumiere a guide d'ondes et procede de fabrication - Google Patents

Amplificateur de lumiere a guide d'ondes et procede de fabrication Download PDF

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Publication number
WO2004023612A1
WO2004023612A1 PCT/JP2003/010519 JP0310519W WO2004023612A1 WO 2004023612 A1 WO2004023612 A1 WO 2004023612A1 JP 0310519 W JP0310519 W JP 0310519W WO 2004023612 A1 WO2004023612 A1 WO 2004023612A1
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Prior art keywords
core
layer
rare earth
optical amplifier
waveguide
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PCT/JP2003/010519
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English (en)
Japanese (ja)
Inventor
Yukari Deki
Akio Furukawa
Tsuyoshi Shimoda
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Nec Corporation
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Publication of WO2004023612A1 publication Critical patent/WO2004023612A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA

Definitions

  • the present invention relates to a waveguide-type optical amplifier using a planar waveguide and a method for manufacturing the same, and more particularly to a waveguide-type optical amplifier having an optical amplification effect by adding a rare earth element to a waveguide made of glass, and a method for manufacturing the same. It relates to a manufacturing method.
  • Optical amplifiers are a very important device in recent long-distance WDM communications because they directly amplify light without passing through electric circuits and amplify over a wide wavelength range.
  • optical amplifiers using fibers doped with rare earth elements such as erbium are mainly used, and high quality amplifiers having high amplification gain and low noise characteristics are provided.
  • optical amplifiers with rare-earth elements added to planar optical waveguides have been developed with the aim of further miniaturization, and optical amplifiers aiming for higher gain and wider amplification band have been developed. Is being done.
  • pumping light is introduced into the optical amplifier from outside to excite rare-earth electrons, the electrons excited by signal light are relaxed, and the intensity of the original signal light is increased by induced emission, thereby increasing the optical intensity.
  • the signal is being amplified.
  • the concentration of the rare earth element to be added may be increased. That is, in order to increase the gain efficiently, it is necessary to provide more excitation levels in the waveguide, and therefore, more rare earth elements such as erbium as sources for generating the excitation levels are provided in the waveguide. Introducing into the market makes it possible to achieve both miniaturization and high gain. .
  • rare earth elements have the property of clustering when added in a high concentration into the waveguide glass.
  • the excitation level changes and the number of rare earth elements contributing to excitation at the desired wavelength is substantially reduced, reducing the amplification gain. Therefore, in order to achieve both miniaturization and high gain, it is only necessary to increase the rare earth concentration in the waveguide glass while suppressing clustering.
  • Important characteristics required for optical amplifiers include high gain and a wide amplification wavelength band. In wavelength multiplex communication, for example, optical signals of 40 kinds of wavelengths are used at 0.8 nm intervals, and a total of 32 nm wavelength band is used. An optical amplifier used in such wavelength division multiplexing communication is required to have a function of amplifying the gain in a band of 32 nm or more.
  • the above-mentioned optical amplifier is also required to be smaller.
  • the gain per unit length in the waveguide direction is increased to shorten and reduce the size of the optical amplifier.
  • An object of the present invention is to obtain a higher gain in a waveguide-type optical amplifier.
  • the waveguide type optical amplifier according to the present invention includes a clad formed on a substrate and a core disposed in the clad, and the core is formed of a material having a different refractive index from the clad.
  • the first layer and the second layer made of a material having a refractive index different from that of the clad and to which a rare earth element is added are alternately stacked, and the second layer is composed of several tens of atoms.
  • the layer is formed to have a thickness of, for example, 50 atomic layers or less.
  • one atomic layer has a thickness of one rare earth element.
  • the rare earth element is discretely present in the thickness direction of the core, and in the second layer formed thin at the atomic layer level, clustering in the thickness direction of this layer is performed. Is suppressed.
  • the thickness of the second layer is thinner, for example, up to 15 atomic layers, more desirably 1 atomic layer, and the higher the number of atomic layers, the higher the clustering. Can be expected.
  • the thickness of all the second layers to which the rare earth element is added may be set to several tens of atomic layers or less than the wave number atomic layer, but the thickness may be set to be at least one of the second layers as described above. .
  • the average concentration distribution of the rare earth elements in the core is higher at the center of the core at least in the height direction of the core, that is, in the stacking direction of the first and second layers. May correspond to the intensity distribution of light guided through the core.
  • the above-mentioned average concentration distribution of the rare earth element refers to an average concentration within a predetermined range centered on an arbitrary point of the core. For example, in the thickness direction of the core, a plurality of layers including the arbitrary point (first layer) , Including the second layer).
  • the first layer may be formed so as to be thicker away from the center of the core, and the second layer may be formed so as to be farther away from the center of the core.
  • the concentration of the rare earth element added to the second layer may be low, and the second layer may be formed thin enough to be separated from the center of the core. .
  • a function of suppressing the class dissociation of the rare earth element added to the core, or an amplification band for amplifying the signal light by exciting the rare earth element added to the core with the excitation light With one or both of the functions to expand
  • the modifying element made of element may be added to the core, or the modifying element may be added only to the second layer.
  • the modifying element is at least one of Al, B, Ga, In, Ge, Sn, Bi, N, P, and Yb.
  • a diffusion prevention layer formed of an element arranged in the first layer and preventing diffusion of a rare earth element added to the second layer may be provided. Alternatively, the diffusion prevention layer may be provided in contact with the second layer.
  • the diffusion preventing layer may be made of at least one of aluminum oxide, silicon nitride, and silicon oxynitride.
  • the rare earth element is at least one of Er, Tm, Pr, and Nd
  • the main components of the core are silicon oxide, aluminum oxide, and oxide.
  • the second layer contains at least one of bismuth, and a main component of the second layer is any one of a phosphate glass, a rare-earth oxide, and a rare-earth element.
  • a method of manufacturing a waveguide-type optical amplifier according to the present invention includes a step of forming a lower clad on a substrate, a first target including a main component of a core, and a second target including a rare earth element on the lower clad. And a third target containing a modifying element, and the core is formed by one of sputtering, ion plating, and vapor deposition that changes the sputter state of the second target and the third target.
  • a step of forming a core to which a correction element is added comprising a laminated structure in which a first layer comprising a main component and a second layer to which a rare earth element is added are alternately stacked; Forming an upper clad, and forming the second layer to a thickness of several tens of atomic layers, for example, 50 atomic layers or less.
  • a method of manufacturing a waveguide type optical amplifier includes a step of forming a lower clad on a substrate, a first source gas containing a main component of a core on the lower clad, By a chemical vapor deposition method in which a second source gas containing a rare earth element and a third source gas containing a modifying element are introduced, a first layer composed of the main components of the core and the rare earth element are added. Alternately with a second layer of tens of atomic layers or less
  • the method includes a step of forming a core made of a laminated structure and having a modifying element added thereto, and a step of forming an upper clad on the lower clad and the core.
  • FIGS. 2A and 2B are schematic cross-sectional views schematically showing configuration examples of a waveguide optical amplifier according to another embodiment of the present invention.
  • FIG. 3A is a distribution diagram showing a distribution of light intensity in a core of an optical waveguide according to another embodiment of the present invention.
  • FIG. 3B is a distribution diagram showing a rare earth element concentration distribution in a core of an optical waveguide according to another embodiment of the present invention.
  • FIG. 4 is a distribution diagram showing a concentration distribution of a rare earth element in a core of an optical waveguide according to another embodiment of the present invention.
  • FIG. 5 is a distribution diagram showing a concentration distribution of a rare earth element in a core of an optical waveguide according to another embodiment of the present invention.
  • FIG. 6 is a schematic sectional view schematically showing a configuration example of a waveguide type optical amplifier according to another embodiment of the present invention.
  • FIG. 7 is a schematic sectional view schematically showing a configuration example of a waveguide type optical amplifier according to another embodiment of the present invention.
  • FIG. 8A, FIG. 8B, FIG. 8C, and FIG. 8D are process diagrams for explaining a method of manufacturing an optical waveguide according to an embodiment of the present invention.
  • FIG. 9 is a configuration diagram schematically showing a manufacturing apparatus for realizing the optical waveguide manufacturing method according to the embodiment of the present invention.
  • FIG. 1A is a schematic cross-sectional view schematically showing a configuration example of a waveguide optical amplifier according to a first embodiment of the present invention.
  • This waveguide type optical amplifier is composed of a lower cladding 2 formed on a substrate 1, a core 3 having a width and height of about 2 m, and an upper cladding 4 formed so as to cover the core 3.
  • the region including the core 3 is doped with a rare earth element for amplifying the signal light propagating in the core 3.
  • the refractive index of the core 3 is larger than that of the lower cladding 2 and the upper cladding 4, and extends in a direction parallel to the plane of the substrate 1.
  • the core 3 is made of a rare-earth-containing layer (second layer) 301 having a thickness of, for example, 1 atomic layer containing Er and a rare-earth element.
  • a laminated structure including a rare-earth-free layer (first layer) 302 having a thickness of 4 atomic layers that does not contain elements is used.
  • the rare earth-containing layer 301 has a thickness of 0.3 nm when, for example, Er is added as a rare earth to a silica-based material. The concentration of the added Er is about 5% with respect to the silicon constituting the rare earth-containing layer 301.
  • the rare-earth-free layer 302 is made of, for example, a silica-based material
  • the layer 302 has a thickness of 1.5 nm.
  • the average concentration of Er in the entire core 3 is about 1 ⁇ 10 2 () atoms Zcm 3 .
  • the waveguide gain was 1.2 dBZcm.
  • the waveguide gain was 1 dB / cm when Er was added uniformly in the conventional core, and the waveguide gain was improved by the waveguide-type optical amplifiers in Figs. 1A and 1B. Is obtained.
  • the substrate 1 is made of, for example, silicon single crystal
  • the lower cladding 2 is made of a silicon oxide film having a thickness of about 15 m
  • the upper cladding 4 is made of, for example, boron and phosphorus having a thickness of about 10 m. It is composed of silicon oxide (BPSG (boron phosp horous silicate glass)) to which is added.
  • BPSG silicon oxide
  • the classifying of the rare earth element (Er) added to the core 3 can be performed. Suppressed and efficient light amplification was performed.
  • the thickness of the rare earth-containing layer 301 is about 1 atom, and By sandwiching the rare earth non-containing layer 302 in which no rare earth element is added, a distance is provided between the rare earth atoms in the thickness direction of the core 3 to reduce clustering.
  • the thickness of the rare earth-free layer 302 is about 4 atomic layers, the rare earth added to the rare-earth-containing layer 301 diffuses and leaks into the rare earth-free layer 302.
  • a small amount of rare earth may be mixed in the rare earth-free layer 302, but even if a small amount of rare earth is present in the rare earth-free layer 302, the concentration is very low. Since it is small, there is almost no cluster unification and there is no problem.
  • the rare earth added to the rare earth-containing layer 301 is not limited to Er, but has an action of amplifying the signal light due to the excitation radiation, such as thulium (Tm), praseodymium (Pr), neodymium (Nd). It may be an element. A combination of a plurality of these may be added to the rare earth-containing layer.
  • the film thicknesses of the rare earth-containing layer 301 and the rare-earth non-containing layer 302 are described as 1 atomic layer and 4 atomic layers, respectively, but are not limited thereto.
  • the rare earth-containing layer 301 may have about 2 atomic layers, and the rare earth non-containing layer 302 may have about 8 atomic layers.
  • the rare earth-containing layer 301 is formed to be thinner, for example, 1 to 15 atomic layers, more preferably 1 atomic layer, and a few atomic layers or less, higher suppression of clustering can be achieved. The effect can be expected.
  • the thickness of all the second layers to which the rare earth element is added may be set to several tens of atomic layers or less than the wave number atomic layer. However, the thickness may be set to be as described above for at least one of the two layers.
  • the concentration of the rare earth element in the plane direction of the rare earth containing layer 301 does not need to be uniform, and may be changed. Further, the dimensions described above are merely examples, and the present invention is not limited to these dimensions.
  • the effect of suppressing clustering increases as the number of atoms in the thickness direction of the rare earth-containing layer 301 decreases. Therefore, theoretically, when the thickness of the rare earth-containing layer 301 is one atomic layer, the effect of suppressing cluster unification is the highest.
  • the current manufacturing technology may have a thickness of about five atomic layers.
  • the rare earth-containing layer The layer 301 is formed substantially in the order of several atomic layers.
  • the rare earth-containing layer 301 is not suitable for mass production with the current manufacturing technology. Increasing the thickness of the rare earth-containing layer 301 reduces the effect of suppressing clustering.However, in the current manufacturing technology, the rare earth-containing layer 301 has a thickness of several tens of atomic layers, for example, about 50 atomic layers. With this, it is possible to mass-produce the above-mentioned laminated structure without difficulty, and it is also possible to obtain an improvement in gain due to the effect of suppressing clustering.
  • one atomic layer has a thickness equivalent to one rare earth element. For example, when the rare earth-containing layer was a 50 atomic layer, the waveguide gain was 1.01 dB / cm.
  • the rare-earth element is discretely present in the thickness direction of the core, and in the second layer formed thin at the atomic layer level, the film of this layer is formed. Cluster unification in the thickness direction is suppressed.
  • the thickness of each of the plurality of rare earth-containing layers 301 and the plurality of non-rare earth-containing layers 302 is uniform in the core 3.
  • the present invention is not limited to this, and each may be different.
  • an example in which the thickness of each of the plurality of rare earth-containing layers 301 and the plurality of non-rare earth-containing layers 302 changes in the core 3 will be described.
  • FIG. 2A is a schematic cross-sectional view schematically illustrating a configuration example of a waveguide optical amplifier according to another embodiment of the present invention
  • FIG. 2B is a cross-sectional view illustrating a core 3 in an enlarged manner.
  • This waveguide type optical amplifier comprises a lower cladding 2 formed on a substrate 1, a core 3 having a width and height of about 2 m, and an upper cladding 4 formed so as to cover the core 3.
  • the region including the core 3 is doped with a rare earth element for amplifying the signal light propagating in the core 3.
  • the refractive index of the core 3 is larger than that of the lower cladding 2 and the upper cladding 4, and extends in a direction parallel to the plane of the substrate 1.
  • the core 3 is made of a rare earth-containing layer 301 having a thickness of, for example, 1 atomic layer containing Er, and containing no rare earth element.
  • the laminated structure with the rare-earth-free layer 302 was formed, and the thickness of the rare-earth-free layer 302 was increased toward both ends in the vertical direction of the core 3.
  • the thickness of the rare earth-free layer 302 That is, by making the interval between the rare earth-containing layers 301 different, the average concentration distribution of the rare earth element in the height direction of the core 3 is changed, and for example, the concentration distribution of light propagating in the core 3 is changed. It becomes possible to correspond.
  • the rare earth-containing layer 301 is, for example, a 0.3-nm-thick layer obtained by adding Er as a rare earth to a silica-based material.
  • the concentration of the added Er is about 5% with respect to the silicon constituting the rare earth-containing layer 301.
  • the rare-earth-free layer 302 is made of, for example, a silica-based material.
  • the average concentration of Er in the entire core 3 is about 1 ⁇ 10 2 () atoms Z cm 3 . is there.
  • the film thickness of the rare-earth-free layer 302 is, for example, 1 nm at the center of the core 3, and is increased toward the upper and lower periphery.
  • the upper and lower ends were set to 5 nm.
  • the waveguide gain was 1.5 dB / cm.
  • the waveguide gain was 1 dB / cm.
  • the waveguide-type optical amplifier shown in FIGS. 2A and 2B improved the waveguide gain. Is obtained.
  • the intensity distribution in the cross-sectional direction of the light guided through the core of the waveguide-type optical amplifier is strong at the center of the core and weaker toward the periphery of the core.
  • the light intensity is low, light may be absorbed without the amplification of light by the high concentration of rare earth elements. Therefore, if a rare earth element is added to the core in accordance with the distribution of the light intensity, the waveguide gain can be further improved.
  • the light guided in the core has the above-mentioned light intensity distribution in a plane perpendicular to the waveguide direction, the height direction (y direction) of core 3 (Fig. 2A, Fig. 2B)
  • the distribution of the rare earth elements should be increased at the center and decreased toward the periphery.
  • the thickness of the rare-earth-free layer 302 is set to, for example, 1 at the center of the core 3.
  • the thickness was made thicker toward the upper and lower periphery, and 5 nm at the upper and lower ends of the core 3.
  • the thickness of the rare earth-containing layer 301 is about 1 to 10 atomic layers. In this way, as shown in FIG. 3B, an average concentration distribution of rare earth elements in the core 3 can be formed.
  • the rare earth-containing layer 301 located farther from the center of the core 3 has a rare earth content (concentration). It may be made lower, and the rare earth-containing layer 301 farther from the center of the core 3 may be formed thinner.
  • the thickness of the rare-earth-free layer 302 is 1 nm at the center of the core 3, and is increased toward the upper and lower sides, and 5 nm at the upper and lower ends of the core 3.
  • the waveguide gain was able to be 1.7 dBZcm.
  • the waveguide gain was 1 dBZcm, so the waveguide type optical amplifier of the present embodiment can greatly improve the waveguide gain. .
  • the concentration of the rare earth element per unit volume in the core may have a Gaussian distribution as shown in FIG. .
  • the concentration per unit volume of Er near the center of the core 3 (average concentration) is 2 ⁇ 10 2 10atom / cm 3 , That is, at the boundary between the core 3 and the clad, the concentration of Er per unit volume (average concentration) may be set to 2 ⁇ 10 19 atoms Zcm 3 .
  • the waveguide gain could be set to 1.7 dBZcm.
  • the waveguide gain was Id B Zcm.
  • the waveguide gain could be greatly improved. it can.
  • the average concentration distribution of rare earth elements in Core 3 is exactly Gaussian. As shown in Fig. 5, it has been confirmed that the effect of increasing the gain does not deteriorate if the error is within ⁇ 30% of the Gaussian distribution. Therefore, in FIG. 5, the dotted lines indicate distributions that increase by + 30% and decrease by 30%, respectively, with respect to the Gaussian distribution.
  • the core contains an element that suppresses clustering of the rare earth element or a correction element that expands the amplification band when the added rare earth element is excited by the excitation light to amplify the signal light. This is an example of addition.
  • the materials of the substrate, the lower cladding, the upper cladding, the film thickness, and the dimensions of the core are the same as those of the waveguide optical amplifier shown in FIGS. 1A and 2A described above.
  • a rare-earth-containing layer 301 having a thickness of 0.3 nm and an in-plane Er concentration of 5% with respect to Si is spaced apart as shown in FIG.1B. Things.
  • A1 added to Si ⁇ 2 constituting the core has the effect of suppressing cluster unification when a rare earth element is added at a high concentration and expanding the amplification wavelength band.
  • boron (B) gallium
  • any element has both the function of suppressing cluster unification and the function of expanding the amplification band.
  • One or more of these elements for suppressing clustering and for improving the amplification band may be added, and other elements having the same function may be added.
  • the above Er concentration, the modifying element to be added, the substrate, the clad material, the size, and the like are merely examples, and are not limited thereto.
  • the class unification can be further suppressed as compared with the above-described embodiment, so that the concentration of Er that can be added can be increased.
  • the waveguide gain was increased to 2.0 dB / cm.
  • the amplification band of 1 dBZ cm or more was expanded by 30 nm or more.
  • the above-mentioned modifying element may be added only to the rare earth-containing layer 301 constituting the core 3.
  • the waveguide gain is 2.2 dB / cm. Therefore, according to the present embodiment, the waveguide gain is increased with respect to 2. O dB / cm when a correction element such as A 1 P is uniformly added in the core.
  • FIG. 6 is a cross-sectional view schematically showing a part of the configuration of the waveguide optical amplifier according to the present embodiment, that is, a core portion. Other configurations are the same as those of the waveguide type optical amplifier shown in FIGS. 1A and 2A.
  • a diffusion prevention layer 303 made of aluminum oxide is newly provided.
  • the diffusion preventing layer 303 is provided in the rare-earth-free layer 302. By providing the diffusion preventing layer 303 in this way, diffusion of the rare earth element in the rare earth containing layer 301 can be suppressed as compared with the above-described embodiment. According to the configuration of the present embodiment in which the diffusion preventing layer 303 made of aluminum oxide having a thickness of 2 nm is provided, the waveguide gain is 2.4 dB / cm increased.
  • the diffusion preventing layer 303 may be provided in contact with the rare earth-containing layer 301. By doing so, the diffusion of rare earth from the rare earth-containing layer 301 can be further suppressed. As a result, the waveguide gain increased to 2.5 dB Zcm. Note that the rare earth-free layer may serve as a diffusion preventing layer.
  • a method of manufacturing the waveguide-type optical amplifier in the above-described embodiment, particularly, a waveguide portion will be described. First, as shown in FIG. 8A, a lower clad 2 is formed on the substrate 1, and then, as shown in FIG.
  • a film 3 a to be the core 3 is formed on the lower clad 2 by RIE (reactive ion etching). )) To process the film 3 a, so that the core 3 is formed on the lower clad 2 as shown in FIG. 8C.
  • each layer for example, a chemical vapor deposition (CVD) method, a sputtering method, a vapor deposition method, a flame deposition method, or the like may be used.
  • CVD chemical vapor deposition
  • a method for manufacturing a laminated structure of a layer to which the rare earth is added and a layer to which the rare earth is not added, which will be the core 3, will be described. This may be achieved, for example, by manufacturing a film having a multilayer structure by a sputtering method using a sputtering apparatus 400 schematically shown in FIG.
  • the film 3a shown in FIG. 8B is formed by the sputtering device 400 shown in FIG.
  • the sputter device includes a target 410 for Si ⁇ 2, a target 420 for Er2 ⁇ 3, and a target 430 for Al2O3.
  • substrate 1 is heated to 300 ° C, the power supply power is 2 kW, the gas pressure in the chamber of the sputtering device is 3 mTorr, the Er concentration is 5%, and the deposition rate is 0.2 nmZs.
  • the flow rate was adjusted.
  • the film thickness could be controlled within 1 nm, and a film with a thickness of 5 atomic layers or less could be formed.
  • the deposition rate is It is not limited to this, but controllability can be improved by adjusting the flow rate and lowering the rate.
  • a film having a laminated structure in which a rare earth-containing layer having a thickness of about 1 atomic layer and a rare earth non-containing layer having a thickness of about 4 atomic layers are alternately formed is realized.
  • a rare earth-containing layer having a thickness of about 1 atomic layer and a rare earth non-containing layer having a thickness of about 4 atomic layers are alternately formed is realized.
  • a film having the above-described laminated structure can be formed also by the CVD method.
  • the case where the film 3a shown in FIG. 8A is formed by the plasma CVD apparatus 500 shown in FIG. 10 will be described.
  • silane 5100, trimethylaluminum 5200, 2,2,6,6-tetramethyl-3,5-heptanedionerbium 530, oxygen 540 is used.
  • Er or A 1 can be added. Since the film is formed on a plane basis by the plasma CVD method, the elements to be added are uniformly distributed in the X direction (film plane direction).
  • the substrate 1 was heated to 42 Ot :, the plasma flow was set to 500 W, and the flow rate was adjusted so that the Er concentration was 5% and the film formation rate was 1 to 2 nmZs.
  • the film thickness can be controlled within 2 nm, and a film having a thickness of 10 atomic layers or less can be formed.
  • the film formation rate is not limited to this, and the controllability of the film thickness can be improved by adjusting the flow rate and lowering the rate.
  • Such a film is not limited to the sputtering method and the CVD method, but can be realized by a film forming method such as a vapor deposition method or a flame deposition method. In either method, the desired concentration distribution can be formed by supplying Er and A1 from different reductions and changing the supply amount as the film is formed.
  • the rare earth elements are discretely present in the core, clustering of the rare earth elements can be suppressed, and higher gain can be obtained in the waveguide type optical amplifier. An excellent effect of being able to obtain is obtained.
  • the average concentration distribution of rare earth elements in the stacking direction of the core is calculated as follows.
  • the density By setting the density to be higher at the center, higher gain can be obtained.
  • higher gain can be obtained by making the average concentration distribution in the stacking direction of the core correspond to the concentration distribution of light guided through the core.
  • the first layer may be thicker as the distance from the center of the core is increased, and the concentration of the rare earth element in the second layer may be decreased as the distance from the center of the core decreases.
  • the second layer may be formed thinner away from the center of the core.
  • the waveguide type optical amplifier according to the present invention is suitable for use in long-distance WDM communication.

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Abstract

La présente invention concerne un amplificateur de lumière à guide d'ondes dont le coeur (3) présente une structure stratifiée faite d'une couche (301) contenant un élément de terre rare sur une épaisseur correspondant sensiblement à une couche atomique, et d'une autre couche (302), exempte d'élément de terre rare, sur une épaisseur correspondant sensiblement à quatre couches atomiques. La couche (301) contenant un élément de terre rare, est notamment une couche comprenant un matériau à base de silice additionné d'erbium (Er) constituant ici l'élément de terre rare, faisant une épaisseur de 0,3 nm, à raison de 5 % de la quantité de silicium de la couche considérée (301). La couche (302) exempte d'élément de terre rare, qui est en matériau à base de silicium, fait une épaisseur de 1,5 nm. Cet amplificateur de lumière à guide d'ondes permet d'obtenir un gain accru.
PCT/JP2003/010519 2002-08-30 2003-08-20 Amplificateur de lumiere a guide d'ondes et procede de fabrication WO2004023612A1 (fr)

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JP2002/254751 2002-08-30
JP2002254751A JP2004095839A (ja) 2002-08-30 2002-08-30 導波路型光増幅器及びその製造方法

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WO2004023612A1 true WO2004023612A1 (fr) 2004-03-18

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JP5246725B2 (ja) * 2005-03-02 2013-07-24 住友電気工業株式会社 光増幅器
FR2939246B1 (fr) * 2008-12-02 2010-12-24 Draka Comteq France Fibre optique amplificatrice et procede de fabrication

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JPH04359230A (ja) * 1991-06-05 1992-12-11 Hitachi Cable Ltd 希土類元素添加光導波路及びその製造方法
JPH0537045A (ja) * 1991-07-26 1993-02-12 Hitachi Cable Ltd 希土類元素添加光導波路
US5206925A (en) * 1990-06-29 1993-04-27 Hitachi Cable Limited Rare earth element-doped optical waveguide and process for producing the same
JPH05341145A (ja) * 1992-06-12 1993-12-24 Hitachi Cable Ltd 希土類イオン含有ガラス導波路の製造方法
US5319727A (en) * 1992-12-28 1994-06-07 Honeywell Inc. Ion-beam deposited, gain enhanced ring resonators
JPH08213690A (ja) * 1994-12-05 1996-08-20 Hitachi Cable Ltd 高利得光増幅器用導波路及びその製造方法

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US5206925A (en) * 1990-06-29 1993-04-27 Hitachi Cable Limited Rare earth element-doped optical waveguide and process for producing the same
JPH04359230A (ja) * 1991-06-05 1992-12-11 Hitachi Cable Ltd 希土類元素添加光導波路及びその製造方法
JPH0537045A (ja) * 1991-07-26 1993-02-12 Hitachi Cable Ltd 希土類元素添加光導波路
JPH05341145A (ja) * 1992-06-12 1993-12-24 Hitachi Cable Ltd 希土類イオン含有ガラス導波路の製造方法
US5319727A (en) * 1992-12-28 1994-06-07 Honeywell Inc. Ion-beam deposited, gain enhanced ring resonators
JPH08213690A (ja) * 1994-12-05 1996-08-20 Hitachi Cable Ltd 高利得光増幅器用導波路及びその製造方法

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