WO2004013381A3 - Boucle anodique insoluble au sein d'une cellule d'electrodeposition contenant du cuivre pour former des interconnexions - Google Patents

Boucle anodique insoluble au sein d'une cellule d'electrodeposition contenant du cuivre pour former des interconnexions Download PDF

Info

Publication number
WO2004013381A3
WO2004013381A3 PCT/US2003/024621 US0324621W WO2004013381A3 WO 2004013381 A3 WO2004013381 A3 WO 2004013381A3 US 0324621 W US0324621 W US 0324621W WO 2004013381 A3 WO2004013381 A3 WO 2004013381A3
Authority
WO
WIPO (PCT)
Prior art keywords
anolyte
compartment
catholyte
plating
sec
Prior art date
Application number
PCT/US2003/024621
Other languages
English (en)
Other versions
WO2004013381A2 (fr
Inventor
Nicolay Y Kovarsky
Dmitry Lubomirsky
Anzhong Chang
Yezdi N Dordi
Michael X Yang
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2004013381A2 publication Critical patent/WO2004013381A2/fr
Publication of WO2004013381A3 publication Critical patent/WO2004013381A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/18—Regeneration of process solutions of electrolytes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/22—Regeneration of process solutions by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

L'invention concerne de manière générale un procédé et un appareil permettant de réaliser un dépôt électrochimique de métal sur un substrat. Le système d'électrodéposition comprend généralement une cellule d'électrodéposition pourvue d'un compartiment à anolyte ainsi que d'un compartiment à catholyte. Le compartiment à anolyte contient une anode insoluble ainsi qu'un anolyte. Le compartiment à catholyte renferme de manière générale un élément porteur de substrat ainsi qu'un catholyte. En outre, ladite cellule d'électrodéposition comprend généralement une membrane d'échange ionique qui est disposée entre le compartiment à anolyte et le compartiment à catholyte, ainsi qu'une pompe qui se trouve en communication fluidique avec ledit compartiment à anolyte, cette pompe étant configurée pour fournir, au compartiment à anolyte, un anolyte présentant une vitesse linéaire comprise entre approximativement 0,5 cm/s et approximativement 50 cm/s. Le procédé selon l'invention comprend de manière générale les étapes consistant à : fournir une solution d'anolyte à un compartiment à anolyte disposé dans une cellule d'électrodéposition pourvue d'un compartiment à anolyte ainsi que d'un compartiment à catholyte, cette solution d'anolyte passant généralement à travers le compartiment à anolyte à une vitesse linéaire comprise entre approximativement 0,5 cm/s et approximativement 50cm/sec ; réaliser un dépôt électrochimique de métal sur le substrat au moyen d'une solution de catholyte qui est disposée dans un compartiment à catholyte de ladite cellule d'électrodéposition, le compartiment à catholyte et le compartiment à anolyte étant séparés par une membrane d'échange ionique ; retirer la solution d'anolyte utilisée qui est contenue dans la cellule d'électrodéposition ; et passer au moins une partie de la solution d'anolyte utilisée à travers un dispositif de correction comprenant au moins de l'oxyde de cuivre, de l'hydroxyde de cuivre et des associations de ceux-ci.
PCT/US2003/024621 2002-08-06 2003-08-06 Boucle anodique insoluble au sein d'une cellule d'electrodeposition contenant du cuivre pour former des interconnexions WO2004013381A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40126002P 2002-08-06 2002-08-06
US60/401,260 2002-08-06
US10/358,781 US20040026255A1 (en) 2002-08-06 2003-02-04 Insoluble anode loop in copper electrodeposition cell for interconnect formation
US10/358,781 2003-02-04

Publications (2)

Publication Number Publication Date
WO2004013381A2 WO2004013381A2 (fr) 2004-02-12
WO2004013381A3 true WO2004013381A3 (fr) 2005-03-10

Family

ID=31498257

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024621 WO2004013381A2 (fr) 2002-08-06 2003-08-06 Boucle anodique insoluble au sein d'une cellule d'electrodeposition contenant du cuivre pour former des interconnexions

Country Status (3)

Country Link
US (1) US20040026255A1 (fr)
TW (1) TW200413573A (fr)
WO (1) WO2004013381A2 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6585876B2 (en) * 1999-04-08 2003-07-01 Applied Materials Inc. Flow diffuser to be used in electro-chemical plating system and method
KR100824910B1 (ko) * 2001-02-07 2008-04-23 엔테그리스, 아이엔씨. 수성 도금액의 탈기 방법
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7189146B2 (en) * 2003-03-27 2007-03-13 Asm Nutool, Inc. Method for reduction of defects in wet processed layers
US20060144712A1 (en) * 2003-12-05 2006-07-06 Klocke John L Systems and methods for electrochemically processing microfeature workpieces
US20100096569A1 (en) * 2008-10-21 2010-04-22 Applied Materials, Inc. Ultraviolet-transmitting microwave reflector comprising a micromesh screen
EP2194165A1 (fr) * 2008-10-21 2010-06-09 Rohm and Haas Electronic Materials LLC Procédé de régénération d'étain et ses métaux d'alliage dans des solutions électrolytes
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9632498B2 (en) * 2013-03-12 2017-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods of compensating for filling material losses in electroplating processes
US10190232B2 (en) * 2013-08-06 2019-01-29 Lam Research Corporation Apparatuses and methods for maintaining pH in nickel electroplating baths
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
US20150299882A1 (en) * 2014-04-18 2015-10-22 Lam Research Corporation Nickel electroplating systems having a grain refiner releasing device
US9732434B2 (en) 2014-04-18 2017-08-15 Lam Research Corporation Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes
KR101723991B1 (ko) * 2015-10-15 2017-04-07 주식회사 티케이씨 웨이퍼 도금장치
US10704156B2 (en) * 2015-12-17 2020-07-07 Texas Instruments Incorporated Method and system for electroplating a MEMS device
US20190345624A1 (en) * 2018-05-09 2019-11-14 Applied Materials, Inc. Systems and methods for removing contaminants in electroplating systems
EP3914757B1 (fr) 2019-01-24 2023-04-05 Atotech Deutschland GmbH & Co. KG Procede de dépôt électrolytique d'un alliage zinc-nickel utilsant un système d'anode à membrane
JP2023507479A (ja) * 2019-12-20 2023-02-22 アトテック ドイチュラント ゲー・エム・ベー・ハー ウント コー． カー・ゲー 亜鉛ニッケル合金を基材上に堆積するための方法およびシステム
EP3875638A1 (fr) * 2020-03-04 2021-09-08 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Procédé de préparation d'un milieu contenant un métal étranger et un sel métallique provenant de la fabrication de cartes de circuits imprimés et/ou de substrats
TW202400850A (zh) * 2022-03-08 2024-01-01 美商蘭姆研究公司 電鍍設備的陽極電解質溶液用劑

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119516A (en) * 1976-10-16 1978-10-10 Koito Manufacturing Company Limited Continuous electroplating apparatus
EP1052311A1 (fr) * 1998-11-30 2000-11-15 Ebara Corporation Machine de galvanoplastie
WO2001068952A1 (fr) * 2000-03-17 2001-09-20 Ebara Corporation Procede et appareil de plaquage electrolytique

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1196631A (en) * 1966-05-31 1970-07-01 Monsanto Co Electrolytic Diaphragm Cell
IE39814B1 (en) * 1973-08-03 1979-01-03 Parel Sa Electrochemical process and apparatus
US4111772A (en) * 1975-05-22 1978-09-05 Pitt Metals And Chemicals, Inc. Process for electrodialytically controlling the alkali metal ions in a metal plating process
US4202753A (en) * 1979-04-23 1980-05-13 Swiss Aluminium Ltd. Reduction cell hood
JPS6021240B2 (ja) * 1980-01-12 1985-05-25 株式会社小糸製作所 堆積される銅をメッキ液に補給する方法及び装置
USH36H (en) * 1981-10-13 1986-03-04 At&T Bell Laboratories Electroplating process with inert anodes
GB2133806B (en) * 1983-01-20 1986-06-04 Electricity Council Regenerating solutions for etching copper
US4466864A (en) * 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
US4752373A (en) * 1985-01-14 1988-06-21 Morton Thiokol, Inc. Electrodialysis apparatus for the chemical maintenance of electroless copper plating baths
DE3740785A1 (de) * 1987-12-02 1989-06-15 Basf Ag Verfahren zum entfernen von saeure aus kathodischen elektrotauchlackier-baedern mittels elektrodialyse
USRE34191E (en) * 1989-05-31 1993-03-09 Eco-Tec Limited Process for electroplating metals
US5162079A (en) * 1991-01-28 1992-11-10 Eco-Tec Limited Process and apparatus for control of electroplating bath composition
US5223118A (en) * 1991-03-08 1993-06-29 Shipley Company Inc. Method for analyzing organic additives in an electroplating bath
ATE125310T1 (de) * 1991-05-30 1995-08-15 Sikel Nv Elektrode für eine elektrolytische zelle, deren gebrauch und verfahren.
US5173170A (en) * 1991-06-03 1992-12-22 Eco-Tec Limited Process for electroplating metals
DE69219484D1 (de) * 1992-09-15 1997-06-05 Atr Wire & Cable Co Verfahren und vorrichtung zur elektrolytischen beschichtung mit kupfer
US5322082A (en) * 1992-10-16 1994-06-21 Yoshihide Shibano Ultrasonic cleaning apparatus
US5498578A (en) * 1994-05-02 1996-03-12 Motorola, Inc. Method for selectively forming semiconductor regions
US5609747A (en) * 1995-08-17 1997-03-11 Kawasaki Steel Corporation Method of dissolving zinc oxide
US5883762A (en) * 1997-03-13 1999-03-16 Calhoun; Robert B. Electroplating apparatus and process for reducing oxidation of oxidizable plating anions and cations
US5863410A (en) * 1997-06-23 1999-01-26 Circuit Foil Usa, Inc. Process for the manufacture of high quality very low profile copper foil and copper foil produced thereby
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US6126798A (en) * 1997-11-13 2000-10-03 Novellus Systems, Inc. Electroplating anode including membrane partition system and method of preventing passivation of same
US5997712A (en) * 1998-03-30 1999-12-07 Cutek Research, Inc. Copper replenishment technique for precision copper plating system
DE69929967T2 (de) * 1998-04-21 2007-05-24 Applied Materials, Inc., Santa Clara Elektroplattierungssystem und verfahren zur elektroplattierung auf substraten
US6309531B1 (en) * 1998-05-08 2001-10-30 Usf Filtration And Separations Group, Inc. Process for extracting copper or iron
US7264698B2 (en) * 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6368475B1 (en) * 2000-03-21 2002-04-09 Semitool, Inc. Apparatus for electrochemically processing a microelectronic workpiece
US6527920B1 (en) * 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US6527934B1 (en) * 2000-10-31 2003-03-04 Galvan Industries, Inc. Method for electrolytic deposition of copper
JP2002220692A (ja) * 2001-01-24 2002-08-09 Ebara Corp めっき装置及び方法
US6989084B2 (en) * 2001-11-02 2006-01-24 Rockwell Scientific Licensing, Llc Semiconductor wafer plating cell assembly
US6878258B2 (en) * 2002-02-11 2005-04-12 Applied Materials, Inc. Apparatus and method for removing contaminants from semiconductor copper electroplating baths
US20040000491A1 (en) * 2002-06-28 2004-01-01 Applied Materials, Inc. Electroplating cell with copper acid correction module for substrate interconnect formation
US20040016648A1 (en) * 2002-07-24 2004-01-29 Applied Materials, Inc. Tilted electrochemical plating cell with constant wafer immersion angle
US7247222B2 (en) * 2002-07-24 2007-07-24 Applied Materials, Inc. Electrochemical processing cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119516A (en) * 1976-10-16 1978-10-10 Koito Manufacturing Company Limited Continuous electroplating apparatus
EP1052311A1 (fr) * 1998-11-30 2000-11-15 Ebara Corporation Machine de galvanoplastie
WO2001068952A1 (fr) * 2000-03-17 2001-09-20 Ebara Corporation Procede et appareil de plaquage electrolytique
EP1229154A1 (fr) * 2000-03-17 2002-08-07 Ebara Corporation Procede et appareil de plaquage electrolytique

Also Published As

Publication number Publication date
TW200413573A (en) 2004-08-01
US20040026255A1 (en) 2004-02-12
WO2004013381A2 (fr) 2004-02-12

Similar Documents

Publication Publication Date Title
WO2004013381A3 (fr) Boucle anodique insoluble au sein d'une cellule d'electrodeposition contenant du cuivre pour former des interconnexions
EE200100059A (et) Leeliseline tsink-nikkel galvaanimisvann
WO2002004711A3 (fr) Technique et dispositif connexe permettant d'incliner un substrat avant electrodeposition
GB2348209B (en) Water purification process
WO2006091937A3 (fr) Electrode auxiliaire encastree dans un tube de membrane d'echange cationique pour une cellule de placage electronique
TW200513548A (en) Insoluble anode with an auxiliary electrode
ATE406202T1 (de) Säure- oder basenerzeugungsverfahren
WO2006053062A3 (fr) Systeme d'electrodeposition d'un alliage d'etain
EP1458905B8 (fr) Cellule d'electrolyse pour restaurer la concentration d'ions metalliques dans des procedes de galvanoplastie
DE59903829D1 (de) Verfahren zur carboxylierung von terminalen alkinen
DE3167841D1 (en) Method for the electro-deposition of lead alloys
EP1672097A3 (fr) Méthode de production électrolytique d'hydrogène, et systèmes et électrolytes associés
US20040000491A1 (en) Electroplating cell with copper acid correction module for substrate interconnect formation
KR20160011594A (ko) 성막용 금속 용액 및 이것을 사용한 성막 방법
TW200514873A (en) Electrochemical processing cell
TW200503318A (en) A system and a method for manufacturing an electrolyte using electrodeposition
KR20060121758A (ko) 전해질 내에서 이온 농도를 설정하는 방법 및 장치
ES2120106T3 (es) Procedimiento para la obtencion de hidroxidos metalicos.
EP0834346A3 (fr) Procédé de purification de composés hydroxydes
EP0834345A3 (fr) Procédé de purification électrochimique de composés hydroxydes
ATE263855T1 (de) Elektrolysezelle zur herstellung eines alkalimetalls
CN101724881B (zh) 不溶性阳极在电镀技术中的应用
WO2001092604A3 (fr) Cellule d'electrolyse permettant de retablir la concentration en ions metal dans des processus de deposition electrolytique
BG99199A (en) Method for electrochemical dissolution of sulphur-containing concentrates and/or ores by ion-exchange membranes
WO1999060188A3 (fr) Procede de cuivrage electrolytique de substrats

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP