WO2004011995A1 - Dispositif de guide d'ondes optique - Google Patents
Dispositif de guide d'ondes optique Download PDFInfo
- Publication number
- WO2004011995A1 WO2004011995A1 PCT/GB2003/003149 GB0303149W WO2004011995A1 WO 2004011995 A1 WO2004011995 A1 WO 2004011995A1 GB 0303149 W GB0303149 W GB 0303149W WO 2004011995 A1 WO2004011995 A1 WO 2004011995A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polarisation
- waveguide device
- core
- layer
- layers
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 27
- 238000005253 cladding Methods 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims description 44
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 230000005540 biological transmission Effects 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 75
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 17
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000012792 core layer Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000002872 contrast media Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12116—Polariser; Birefringent
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12128—Multiple Quantum Well [MQW]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/07—Polarisation dependent
Definitions
- the present invention relates to optical waveguides and particularly, but not exclusively, to optical waveguides for transmittmg or conducting optical signals having only one polarisation.
- the waveguide of the invention permits effective transmission of optical signals of only one polarisation, signals of other polarisations being leaked from the waveguide.
- optical waveguides permit the transmission of light therethrough in both transverse electric (TE) and transverse magnetic (TM) polarisation modes with substantially equal efficiency such that losses are generally similar for both modes along the length of the waveguide.
- TE transverse electric
- TM transverse magnetic
- optical waveguides which permit transmission of optical signals of only one polarisation may be particularly suited.
- Such applications include polarisation splitters and single- electrode intensity modulators.
- optical waveguide device or the like in which optical signals of only one polarisation are permitted to be transmitted efficiently. It would be further advantageous to provide an optical waveguide device or the like in which optical signals applied to the device are split into a plurality of signals each having a single polarisation, each single polarisation signal being transmitted individually by the waveguide device.
- an optical waveguide device or the like comprising:
- At least one of said core and said cladding layer comprises a plurality of. layers, each layer having a substantially different refractive index from layers immediately adjacent thereto, thereby to control signal losses of optical signals applied to said device having a first polarisation relative to those of signals having a second polarisation.
- the arrangement is such that signal losses of optical signals having a first polarisation are substantially less than those of signals having a second polarisation.
- the signal losses of the signals having the first polarisation may be between 10 and 10,000 times less than those of signals having the second polarisation.
- one of the core and the cladding may include at least twenty sets of layers, each set comprising a layer of a second material sandwiched between first and second layers of a first material.
- the first and second layers of the first material may be group III-V materials and may, for example, be selected from any one of the following; GaAs, GaP, GaN, AlAs, InAs and InP.
- the second material may also be a group III-V material selected from any one of the following; GaAs, GaP, GaN, AlAs, InAs and InP.
- the first and second layers of the first material each comprise a layer of GaAs, preferably approximately 0.045 ⁇ m thick
- the layer of the second material comprises a layer of AlAs, preferably approximately 0.01 ⁇ m thick. This arrangement of layers and materials may be reversed.
- one of the core and the cladding may include at least thirty sets of layers, each set comprising a layer of a first material and a layer of a second material.
- the layer of the first material comprises a 0.09 m thick layer of GaAs and the layer of the second material comprises a O.Ol ⁇ m thick layer of AlAs. This arrangement of layers and materials maybe reversed.
- the layered structure changes the apparent or effective refractive index of the core or the cladding respectively for one of the polarisations but does not affect the effective refractive index for the other polarisation.
- signal losses for one or both polarisations can be controlled.
- Figure 1 is a cross-section through a first form of waveguide device according to the invention
- Figure 2 is a cross-section through a second form of waveguide device according to the invention.
- Figure 3a illustrates the electric field for the TE polarised mode produced by the waveguide device of Figure 1
- Figure 3b illustrates the magnetic field for the TM polarised mode produced by the waveguide device of Figure 1
- Figure 4a illustrates a contour plot of the electric field for the TE polarised mode produced by the waveguide device of Figure 1,
- Figure 4b illustrates a contour plot of the magnetic field for the TM polarised mode produced by the waveguide of Figure 1,
- Figure 5 is a plot of predicted signal loss against waveguide width for the waveguide device of Figure 1,
- Figure 6a illustrates a first contour plot of the electric field for the TE polarised mode produced by a 3 ⁇ m waveguide device according to the invention
- Figure 6b illustrates a second contour plot of the electric field for the TE polarised mode produced by a 3 ⁇ m waveguide device according to the invention
- Figure 7a illustrates a contour plot of the electric field for the TE polarised mode produced by the waveguide device of Figure 2
- Figure 7b illustrates a contour plot of the magnetic field for the TM polarised mode produced by the waveguide device of Figure 2.
- TE mode polarisation For light polarised in the plane of the interface (TE mode polarisation), the electric field component Et tangential to the interface is continuous and the derivative of Et with respect to the direction normal to the interface is also continuous.
- Et For light polarised perpendicular to the plane of the interface (TM mode polarisation), however, an extra factor of n 2 appears in the boundary condition on Et, where n is the refractive index of the relevant layer.
- the effective or apparent refractive index for light polarised in the plane of the layers (n TE ) is approximately given by the index of Al x Gar x As with the same average mole fraction x as the GaAs / AlAs layers. In other words, the effective or apparent refractive index depends on the "mark-to-space" ratio of the layers.
- the effective or apparent index for light polarised perpendicular to the layers (nxM) is lower than ⁇ TE by an amount An since the boundary conditions on the fields at the dielectric interfaces are different for the different polarisations.
- the waveguide device of the present invention makes use of this effect to cause light applied to the device at a first polarisation to be leaked from the waveguide at a substantially greater rate than light at a second polarisation, thereby effectively permitting light at only the second polarisation to be transmitted therethrough.
- FIG. 1 illustrates a cross section through a first form of waveguide device 10 according to the invention.
- the waveguide device 10 comprises a plurality of layers of material, in the manner of a conventional waveguide.
- the arrangement of layers, or "epitaxy”, of the waveguide device 10 is described below.
- the waveguide device 10 comprises an upper cladding layer 12, a core 14 adjacent to the upper cladding layer 12, a first lower cladding layer 16 adjacent to the core 14 and a second lower cladding layer 18 adjacent to the first lower cladding layer 16.
- the second lower cladding layer 18 is mounted on a substrate layer 20.
- a cap layer 22 is disposed on the upper surface of the upper cladding layer 12.
- each of the layers has the following properties:
- the cap layer 22 is formed from Gallium Arsenide (GaAs).
- the upper cladding layer 12 is approximately 1.1 ⁇ m in thicknesses and is formed of 30% AlGaAs having a refractive index of 3.2582.
- the first lower cladding layer 16 is approximately 0.3 ⁇ m in thickness and is also formed from 30% AlGaAs material having a refractive index of 3.2582.
- the second lower cladding layer 18 is approximately 3 ⁇ m in thickness and is formed from 14% AlGaAs material having a refractive index of 3.3392.
- the substrate layer 20 is formed from GaAs material having a refractive index of 3.4094 and can be of any desired thickness, although approximately 600 microns is preferred.
- the core is formed from 10% o AlGaAs material.
- the core 14 is not uniform but is formed from a plurality of alternating layers of GaAs material and AlAs material with thicknesses of approximately 0.09 ⁇ m and 0.01 ⁇ m respectively.
- the core 14 includes twenty "sets" 14a, 14b etc. of core layers, each set comprising a first core layer 24 which is approximately 0.045 ⁇ m in thickness and is formed from GaAs material, a second core layer 26, adjacent the first core layer 24, which is approximately 0.01 ⁇ m in thickness and is formed from AlAs material and a third core layer 28, adjacent the second core layer 26, which is approximately 0.045 ⁇ m in thickness and is formed from GaAs material.
- Each set of core layers is thus approximately 0.1 ⁇ m in thickness (0.045 ⁇ m + 0.01 ⁇ m + 0.045 ⁇ m) such that the overall thickness of the core is approximately 2 ⁇ m.
- the average or effective refractive index is substantially the same as 10% AlGaAs for the TE polarised light but significantly lower than this for the TM polarised light .
- the above-described waveguide device is arranged to support transmission therethrough only of TE polarised light. Transmission of TM polarised light through the waveguide device is not supported.
- the principle by which the waveguide device of the invention operates is described below.
- the arrangement of layers 24, 26, 28 in the core 14 is such that the effective or apparent refractive index as seen by the TE polarised light is 3.3521 while that seen by the TM polarised light is 3.3369.
- the refractive index of the lower cladding layer 18 (which is the primary means by which light is confined in the guide) to the value of 3.3392, which is lower than the refractive index of the core 14 for TE polarised light but higher than that for TM polarised light, the total internal reflection, and hence the transmission, of TE polarised light through the core is maintained but that of the TM polarised light is not. Instead, much of the signal power of the TM polarised light is lost through the second lower cladding layer 18 and into the substrate 20.
- the waveguide device of the present invention allows the relative effective refractive indices of the core 14 and the second lower cladding layer 18 to be altered for the different polarisations.
- This change in the relative effective refractive indices between the core 14 and the second lower cladding layer 18 is achieved by forming the core 14 from a plurality of layers of GaAs and AlAs with a carefully selected mark-to-space ratio to determine the average or effective refractive indices seen by the different polarisations.
- the waveguide permits efficient transmission only of TE polarised light through low signal loss and reduces or substantially prevents transmission of TM polarised light by causing significantly higher signal loss of this mode from the core into the substrate 20.
- the waveguide device 10 has an upper cladding layer 32, a core 34, a first lower cladding layer 36, a second lower cladding layer 38 and a substrate layer 40 as in the device of Figure 1.
- the core 34 is formed from uniform (isotropic) 7% AlGaAs material whilst the second lower cladding layer 38 is formed from alternating layers of GaAs and AlAs having thicknesses of approximately 0.09 ⁇ m and 0.01 ⁇ m respectively.
- the second lower cladding layer 38- comprises thirty sets 38a, 38b etc. of layers, each set comprising one 0.09/m thick GaAs layer 44 and one O.Ol ⁇ m thick AlAs layer 46.
- the total thickness of the second lower cladding layer 38 is approximately 3 ⁇ m.
- the average index of the second lower cladding layer 38 is approximately that of 10% AlGaAs for TE polarised light, but is considerably lower than that for TM polarised light.
- Figure 3 a illustrates the electric field E(x) for the TE polarised light plotted against distance x through the layers of the device of Figure 1.
- the large majority of the field is contained within the core 14 of the waveguide device with very little power leaking into the substrate 20 (to the right of the peak). This indicates transmission of the TE polarised light along the waveguide device.
- Figure 3b illustrates the magnetic field for the TM polarised light in a similar plot for the device of Figure 1.
- FIG. 3b illustrates the magnetic field for the TM polarised light in a similar plot for the device of Figure 1.
- Figures 4a and 4b illustrate contour plots of the fundamental TE and TM electric and magnetic fields respectively for a 6 ⁇ m wide, deep-etched guide having the epitaxy of Figure 1.
- the lateral confinement. due to the waveguide sidewalls reduces the effective refractive indices of the modes within the core 14 to 3.3502 for the TE polarised light and 3.33509 for the TM polarised light. This results in a negligible increase in signal loss for the TE mode but a much greater loss in the TM mode (to approximately 27.9 dB/cm). It is clear from Figures 4a and 4b that very much more TM polarised light leaks into the substrate 20 than TE polarised light.
- Figure 5 illustrates a plot of predicted guide loss against guide width for the fundamental TE and TM modes and also for the first higher order lateral TE mode. These are the only modes with losses below 100 dB/cm for the device of Figure 1. It is clear that the TM mode suffers high signal loss particularly as the guide width decreases (which decreases the effective refractive index for this mode even further below that of the second lower cladding layer 18). As the guide width decreases, the effective refractive indices of the core for both of the TE modes also decrease and as they drop below the lower cladding indices, they also suffer from high signal loss.
- Figures 6a and 6b illustrate the field contours, effective refractive indices and signal losses for the two TE modes within the core 14 for a 3 ⁇ m wide waveguide.
- the effective refractive index of the first higher order lateral TE mode in the core ( Figure 6b) is below that in the second lower cladding layer 18 and so this mode suffers a high signal loss (16.1 dB/cm).
- the effective refractive index of the fundamental TE mode in the core ( Figure 6a) is still higher than that of the second lower cladding layer 18 and so the signal loss for this mode is still very "low (0.085 dB/cm).
- This waveguide device will therefore support only one mode at only one polarisation.
- FIGs 7a and 7b illustrate field contours for the TE and TM modes produced by the waveguide device of Figure 2.
- the TM mode is more strongly confined than the TE mode since it sees a lower effective refractive index for the second lower cladding layer 38 relative to that of the core 34 than does the TE mode.
- a single polarisation waveguide device is particularly useful for electro-optic guides because the electro-optic effect due to a field applied perpendicular to the epitaxy layers only affects the TE mode. It is preferable that the TM mode is not transmitted through the device rather than transmitted unaffected by the electro-optic effect.
- deep-etched electro-optic waveguide devices can give rise to field dependent polarisation rotation from TE to TM which has disadvantageous consequences if a high extinction Mach Zehnder interferometer switch is required. This is because some light passes through the device even in the off state because it has been converted from TE to TM which cannot be switched by the electro-optic effect and so passes through the output port.
- the different layers forming the anisotropic material could be smoothed out in selected areas of the wafer to make an isotropic material. This would allow certain parts of the waveguide circuit to support transmission of both TE and TM polarised light while other parts support transmission of only one polarisation.
- the Impurity Inducing Disordering process could be used to create a single-guide intensity modulator with a potentially very high extinction ratio.
- an array waveguide grating device employs a plurality of the above-described waveguide devices, modified to support both polarisations, but maintaining the large effective index difference between the TE and TM modes.
- This can be achieved by, for example, increasing the AlGaAs composition of the second lower cladding layer 18, shown in Figure 1, to approximately 18% such that the index of the second lower cladding layer is lower than the effective indices of both TE and TM modes. Thus both modes are confined.
- Each AWGD comprises an input 1 x 101 splitter, a set of 101 waveguide delay lines stepped in length from 2 to 3 mm in 10 micron steps, a 101 x 51 output recombiner and 51 output guides.
- the device acts as a wavelength division multiplexer/demultiplexer such that different wavelengths emerge from different output guides. It has been noticed that the two different polarisations emerged from two different waveguides suggesting that the large difference in the waveguide core refractive index for the two different polarisations can be used to make the integrated optical version of a polarisation beam splitter. This is a very significant component which has particularly important applications for LIDAR applications amongst others.
- layered GaAs /AlAs waveguide structures An alternative application of layered GaAs /AlAs waveguide structures is that, rather than trying to maximise the difference between the TE and TM mode indices, the effect can be used to minimise the index difference or reduce it to zero so that components such as AWGDs can be made polarisation insensitive.
- the specific device structures referred to hereinbefore are layered GaAs /AlAs structures
- the device may have an epitaxy structure based on any group III-V material, for example GaP, InAs, InP, GaN.
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- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003281726A AU2003281726A1 (en) | 2002-07-25 | 2003-07-24 | Optical waveguide device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0217227.8 | 2002-07-25 | ||
GB0217227A GB0217227D0 (en) | 2002-07-25 | 2002-07-25 | Optical waveguide device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004011995A1 true WO2004011995A1 (fr) | 2004-02-05 |
Family
ID=9941062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB2003/003149 WO2004011995A1 (fr) | 2002-07-25 | 2003-07-24 | Dispositif de guide d'ondes optique |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2003281726A1 (fr) |
GB (1) | GB0217227D0 (fr) |
WO (1) | WO2004011995A1 (fr) |
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GB0217227D0 (en) | 2002-09-04 |
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