WO2004010114A2 - Dispositif d'inspection de plaquettes - Google Patents

Dispositif d'inspection de plaquettes Download PDF

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Publication number
WO2004010114A2
WO2004010114A2 PCT/EP2003/007677 EP0307677W WO2004010114A2 WO 2004010114 A2 WO2004010114 A2 WO 2004010114A2 EP 0307677 W EP0307677 W EP 0307677W WO 2004010114 A2 WO2004010114 A2 WO 2004010114A2
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WO
WIPO (PCT)
Prior art keywords
wafer
imaging
illumination
axis
edge
Prior art date
Application number
PCT/EP2003/007677
Other languages
German (de)
English (en)
Other versions
WO2004010114A3 (fr
Inventor
Henning Backhauss
Original Assignee
Leica Microsystems Semiconductor Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leica Microsystems Semiconductor Gmbh filed Critical Leica Microsystems Semiconductor Gmbh
Priority to JP2004522463A priority Critical patent/JP2005533260A/ja
Priority to AU2003250961A priority patent/AU2003250961A1/en
Priority to EP03764995A priority patent/EP1523670A2/fr
Publication of WO2004010114A2 publication Critical patent/WO2004010114A2/fr
Publication of WO2004010114A3 publication Critical patent/WO2004010114A3/fr
Priority to US11/037,668 priority patent/US20050122509A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G01N2021/8825—Separate detection of dark field and bright field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection

Definitions

  • the invention relates to a device for wafer inspection with an incident light illuminating device with an illuminating axis and an imaging device with an imaging axis, both of which are directed towards an area of the surface of a wafer to be inspected.
  • the wafers are coated with photoresist during the manufacturing process.
  • the photoresist first goes through an exposure process and then through a development process. In these processes, it is structured for subsequent process steps. Due to the manufacturing process, a little more photoresist is deposited in the edge area of the wafer than in the middle of the wafer. This creates an edge bead, referred to as "edge bead" in English. Photoresist on the edge of the wafer and the edge bead can lead to contamination of production machines and to the development of defects on the wafer in the subsequent process steps.
  • edge bead removal is carried out.
  • Errors in the width of the edge stripping result from inaccurate alignment of the corresponding stripping devices relative to the wafer. Further sources of error are the inaccurate alignment of the illumination devices relative to the wafer when exposing the photoresist. Too much edge stripping leads to a reduction in the usable wafer area and thus to the loss of produced chips. Insufficient edge stripping can lead to contamination of the subsequently applied resist layers or other structures in the edge region of the wafer. Since the productivity of the manufacturing process is reduced in both cases, along with many other defects, the edge coating is removed during the Manufacturing process continuously monitored. The width of the edge stripping is checked and it is checked whether edge stripping has taken place at all.
  • Devices which recognize a wide variety of structures on the surface of a wafer by means of image recognition.
  • the wafer is illuminated in the bright field and scanned with a camera (matrix or line scan camera).
  • edge stripping In the known devices for wafer inspection, image processing cannot make a simple distinction between edge stripping (EBR) and other edges present in the image. These other edges come from previous process steps. In bright field lighting, all edges are different in color or gray value. Since the different edges partly cross or overlap, the color or the gray value of the edges also change. It is therefore very difficult or impossible with image processing to filter out the edge stripping in this way. A visual inspection by an observer does not lead to better results either, since the human eye is also unable to assign the different edges and the observed color tones or gray values to the different process steps.
  • EBR edge stripping
  • This object is achieved by a device for wafer inspection with an incident light illuminating device with an illuminating axis and an imaging device with an imaging axis, both of which are inclined towards one another and directed towards an area of the surface of a wafer to be inspected.
  • An imaging plane is defined in that it is spanned by the illumination axis and the imaging axis in the bright field illumination setting of the device.
  • the device is characterized in that the illumination axis is rotated out of the imaging plane by a dark field angle ⁇ > 0 so that there is dark field illumination in the area to be inspected.
  • the quality of the dark field illumination increases for larger dark field angles ⁇ .
  • the choice of the dark field angle ⁇ depends in particular on the scattering behavior of the surface structure and the surface materials of the wafer or already structured or coated wafers.
  • the edge of the EWC can be reliably made visible in the edge region of the wafer, since it appears in the image as a much brighter line than the edges of previous process steps.
  • an acceptable dark-field illumination is also generated in those cases in which the illumination axis runs somewhat outside the point of impact. It is crucial that light from the illuminated area of the wafer surface still enters the imaging beam path. The respective setting depends on the properties of the surface examined (scattering behavior, material, structures, etc.)
  • the imaging plane can in principle be inclined with respect to the wafer surface. In terms of design, however, it turns out to be easier if the imaging plane is perpendicular to the wafer surface, since this makes the adjustment of the device easier.
  • the imaging axis can coincide with a wafer normal through the point of impact, that is to say that the imaging axis is collinear with the wafer normal.
  • the imaging axis of the imaging device for example a camera, is directed perpendicularly from above onto the wafer. This can also be achieved by arranging the imaging device itself laterally and the imaging beam path with the
  • Imaging axis is laterally coupled into the device via an optical coupling element (e.g. mirror, prisms, etc.).
  • the imaging axis is then deflected by the coupling element in such a way that it runs collinearly with the wafer normal.
  • the imaging axis inclined by an imaging angle ⁇ > 0 with respect to the wafer normal through the point of incidence are also possible.
  • the best imaging properties are obtained when the imaging angle ⁇ is equal to the illumination angle ⁇ , the illumination angle ⁇ being defined in this embodiment of the device by the inclination of the illumination axis with respect to the wafer normal through the point of incidence.
  • the dark field angle ⁇ by which the illumination axis is rotated out of the imaging plane, preferably assumes values between 5 ° and 45 °, ie if applies 5 ° ⁇ ⁇ 45 °.
  • the lighting device can be equipped with both a polychromatic and a monochromatic light source.
  • the light source can be a mercury vapor pressure lamp or a cold light source with a coupled fiber bundle for transmitting the light.
  • the use of an LED or a laser with beam expansion is also conceivable.
  • Both a divergent and a convergent illumination beam path can be used.
  • a telecentric illumination beam path is preferred, slight deviations from the strictly telecentric beam guidance being permissible without loss of the illumination quality.
  • the imaging device usually consists of a lens and a camera or a camera line arranged after it, onto which the area to be inspected is imaged. Depending on the imaging scale specified by the lens, areas of different sizes can therefore be inspected with the camera image.
  • an imaging device for the inspection of wafer defects in the area of the wafer edge, an imaging device is preferably used which comprises an objective lens and a line scan camera.
  • An optimal dark-field representation of the lacquer edge of edge-stripped photoresist layers is achieved if the dark-field illumination is carried out by inclining the incident light illumination device from the central region of the wafer in the direction of the wafer edge.
  • Alignment marks on the wafer or striking edge structures can be used as a reference point for localizing observed defects.
  • the wafer edge itself is preferably used.
  • a wafer underside illumination device is additionally arranged, which is positioned below the wafer in the region of the wafer edge. This wafer underside illumination device radiates from below beyond the wafer edge and illuminates the imaging device. In this way, a clear light / dark transition emerges in the camera image or in the camera line, which exactly reproduces the wafer edge.
  • the wafer In order to be able to carry out an inspection of the entire wafer edge, the wafer is placed on a holding device which can be rotated about its center. For automated inspection of the wafer edge, this pick-up device is coupled to a motor drive, which performs an exact rotation of the pick-up device. For automatic inspection of the edge area of the wafer, the device is assigned a data readout device which sequentially reads the image data of the line scan camera during the rotational movement of the wafer on the recording device. A computer, which is connected to the device, controls the motor drive and the data reading device. Alternatively, an encoder is provided that triggers the camera and / or the data readout device (e.g. frame grabber)
  • Various parameters or defects can then be determined with the computer from the image data recorded sequentially during the rotation of the wafer. For example, the position of the so-called wafer flat or the position of the so-called wafer notch on the wafer edge can be determined.
  • the wafer is rotated at least once by 360 °.
  • the image data recorded sequentially during this rotation are evaluated, the brightest line in the image (or the brightest pixel in the image with a line camera) characterizing the position of the EBR edge.
  • the edges of previous process steps appear only as low-intensity lines or pixels of the line scan camera. From the position of the EBR edge relative to the wafer edge, which is If the lighting device is made visible, the extent of the edge stripping or its deviations from the target values relative to the wafer edge can be determined.
  • FIG. 2 shows a side view of a device for wafer inspection over the entire wafer area
  • FIG. 5 A side view, rotated by 90 ° with respect to FIG. 4, of a device for wafer inspection of the wafer edge or the edge stripping;
  • an imaging axis was selected in the examples shown below that is perpendicular to the wafer surface. This proves to be not only simpler in the drawing, but also constructive, since the device is easier to adjust.
  • FIG. 1 shows a device 1 for wafer inspection with a wafer 2 to be inspected.
  • the wafer 2 is placed on a receiving device 3 (covered in this illustration) which holds the wafer 2 in place by means of vacuum suction.
  • the required vacuum is taken up by the Device 3 supplied by means of a vacuum line 4, which is connected to a vacuum system, not shown, for generating the vacuum.
  • An incident light illuminating device 5 is directed onto an area of the wafer 2 to be inspected and receives its light from a light source 7 via an optical fiber bundle 6.
  • the incident light illuminating device 5 is arranged inclined with respect to the surface of the wafer 2.
  • An imaging device 9 is arranged on a displaceable support element 8.
  • the imaging device 9 has an imaging axis 10. At the point of impact 11 of this imaging axis 10 on the wafer 2, a wafer normal 12 is defined, that is, a construction line that is perpendicular to the wafer 2 at the point of impact 11. In the illustration, the wafer normal 12 and the point of impact 11 coincide.
  • the imaging axis 10 is inclined with respect to the wafer normal 12, i.e. the imaging device 9 is arranged inclined to the surface of the wafer 2.
  • the imaging axis 10 and the wafer normal 12 span a plane 13, which is represented by a broken line in the top view.
  • This plane 13 corresponds to the imaging plane that is spanned by the imaging axis 10 and the illumination axis 14 in the bright field setting of the device.
  • the incident light illuminating device 5 has an illuminating axis 14, which according to the invention is inclined relative to the plane 13 by the illuminating angle ⁇ .
  • the illumination axis 14 strikes the wafer 2 at the point of impact 11, that is to say at the same point at which the imaging axis 10 also strikes the wafer 2. Therefore, in the present case the illumination angle ⁇ is defined as the inclination of the illumination axis 14 with respect to the wafer normal 12.
  • the adjustment of the illumination angle ⁇ is carried out by means of the ⁇ adjustment device 24 to which the incident light illumination device is attached.
  • the ⁇ adjustment device 24 is attached to a ⁇ adjustment device 24, which in turn is attached to the Support rail 15 is arranged. It proves to be advantageous if the imaging angle ⁇ is equal to the illumination angle ⁇ . However, somewhat different illumination angles ⁇ and imaging angles ⁇ are still achieved in a good image.
  • the illumination angle ⁇ is not directly visible in FIG. 1, but is only indicated by the fact that part of the inclined housing can be seen by the incident light illumination device 5. However, it is clearly visible that the illumination axis 14 is rotated out of the plane 13 by a dark field angle ⁇ by rotation about the wafer normal 12.
  • dark field illumination is generated in the area to be inspected on the surface of the wafer 2.
  • the dark field angle ⁇ is adjusted by means of the ⁇ adjusting device 24, which allows the incident light illumination device 5 to be pivoted about the wafer normal 12.
  • Tests have shown that basically setting the dark field angle ⁇ in the range 0 ° ⁇ ⁇ 50 ° achieves dark field illumination.
  • Imaging device 9 can be moved over the wafer surface by moving the support element 8. Since the imaging device 9 and the illumination device 5 are rigidly connected to one another via a common, adjustable mounting rail 15, the entire device 1 is moved over the surface of the wafer 2 to the desired area to be inspected by moving the mounting element 8. In order to make it easier to locate any areas of the wafer surface of the wafer 2 that are to be inspected, the wafer 2 is additionally rotatably mounted on the holding device 3 (not shown). The rotary movement is symbolically indicated by a curved double arrow. Usually lies the Wafer 2 firmly on the receiving device 3 by vacuum suction, and the receiving device 3 itself is rotatable.
  • the incident light illuminating device 5 and the imaging device 9 can thus be displaced together and any areas on the wafer 2 to be inspected can therefore be examined.
  • the respectively recorded image data of the imaging device 9, which consists, for example, of a lens and a camera, are transmitted to a data readout device 17 via a data line 16.
  • FIG. 2 shows a side view of a device 1 for wafer inspection.
  • a holding device 3 On the lower part of a stand 20 there is a holding device 3 on which a wafer 2 is placed.
  • the receiving device 3 is supplied with vacuum by means of a vacuum line 4, so that the wafer 2 can be sucked in.
  • the receiving device 3 is rotatable about its vertical axis, which is indicated by a double arrow. In this way, the wafer 2 can also be rotated.
  • An imaging device 9 consisting of an objective 18 and a camera 19 is directed onto an area of the surface of the wafer 2 to be inspected.
  • the imaging device 9 has an imaging axis 10 which is inclined with respect to the surface of the wafer 2 and which
  • Wafer surface hits point 11.
  • a construction line that is perpendicular to the surface of the wafer 2 at this point of impact 11 is defined as the wafer normal 12.
  • the inclination of the imaging axis 10 with respect to this wafer normal 12 defines the imaging angle ⁇ .
  • An incident light illuminating device 5 is also directed onto the area of the wafer surface to be inspected.
  • the incident light illuminating device 5 has an illuminating axis 14 which is inclined by an illuminating angle ⁇ with respect to the wafer normal 12.
  • ⁇ an illuminating angle
  • the imaging axis 10 and the wafer normal 12 span a plane 13 which corresponds in the illustration to the plane of the drawing. This level 13 corresponds to the mapping level that in Bright field setting of the device can be spanned by the imaging axis 10 and the illumination axis 14.
  • the illumination angle ⁇ drawn in FIG. 2 does not correspond to the actual illumination angle to scale. Rather, the illumination angle ⁇ shown in the plane of the drawing is shortened by projecting the actual spatial position of the illumination axis 14.
  • the incident light illuminating device 5 is attached to the device by means of the ⁇ adjusting device 25 and the imaging device 9 is attached to it by means of an adjusting rail 21
  • Support rail 15 is arranged, which is rigidly connected to the support member 8.
  • the spatial position of the imaging device 9 can be varied and determined by means of the adjusting rail 21, so that different imaging angles ⁇ can be set.
  • the user of the device can therefore adapt the dark field illumination to his particular problem, e.g. B. adapt to the size, height or optical properties (such as contrast, reflectivity, etc.) of the structures to be investigated. This makes it particularly easier to examine low-contrast structures than with previously known bright-field lighting devices.
  • the mounting rail 15 with the imaging device 9 attached to it is rigidly connected to a displaceable mounting element 8 which is attached to the vertical part of the stand 20.
  • the incident light illumination device 5 is arranged on a ⁇ adjustment device (not shown here), which is also rigidly connected to the support element 8.
  • the support element 8 is horizontally displaceable, so that the unit consisting of incident light illuminating device 5 and imaging device 9 can be displaced together. In this way, the impact point 11 and thus the dark field area can be positioned on any areas of the surface of the wafer 2 to be inspected by moving the support element 8.
  • the wafer 2 can be rotated about a vertical axis by means of the rotatable receiving device 3.
  • the image data generated by the camera during the inspection are transmitted to a data readout device 17 via a data line 16. There they stand for further processing and evaluation, e.g. B. using a computer.
  • FIG. 3 shows a top view of a device 1 for wafer inspection, in which the area to be inspected lies in the area of the wafer edge.
  • the wafer 2 is placed on a receiving device 3 (hidden in this illustration), which holds the wafer 2 in place by means of vacuum suction.
  • the required vacuum is fed to the receiving device 3 by means of a vacuum line 4.
  • An incident light illuminating device 5 is directed onto the area of the wafer edge 23 of the wafer 2 to be inspected, which device receives its light via a light guide bundle 6 from a light source 7.
  • the incident light illuminating device 5 is arranged inclined with respect to the surface of the wafer 2.
  • An imaging device 9 is arranged on a displaceable support element 8 by means of a support rail 15.
  • the imaging device 9 has an imaging axis 10.
  • the wafer normal 12 is defined, that is, a construction line that is perpendicular to the wafer 2 at the point of impact 11.
  • the wafer standards fall in the illustration shown here
  • An optimal dark field representation of the lacquer edge of edge-stripped photoresist layers is achieved in that the incident light illuminating device 5 is directed from the central region of the wafer 2 in the direction of the wafer edge 23.
  • the imaging axis 10 is around the normal to the wafer 12 Imaging angle ⁇ inclined, ie the imaging device 9 is arranged inclined with respect to the surface of the wafer 2.
  • the imaging axis 10 and the wafer normal 12 span a plane 13, which is represented by a broken line in the top view.
  • This plane 13 corresponds to the imaging plane that is spanned by the imaging axis 10 and the illumination axis 14 in the bright field setting of the device.
  • the incident light illuminating device 5 has an illuminating axis 14 which, according to the invention, is inclined by the illuminating angle ⁇ relative to the wafer normal 12 and rotated out of the plane 13 by the dark field angle ⁇ .
  • the illumination axis 14 strikes the wafer 2 at the point of impact 11, that is to say at the same point at which the imaging axis 10 also strikes the wafer 2. Therefore, in the present case the illumination angle ⁇ is defined as the inclination of the illumination axis 14 with respect to the wafer normal 12. In the example shown, the illumination angle ⁇ is equal to the imaging angle ⁇ .
  • the illumination angle ⁇ is not directly visible in FIG. 3, but is only indicated by the fact that a part of the inclined housing can be seen by the incident light illumination device 5. However, it is clearly visible that the illumination axis 14 is rotated out of the plane 13 by a dark field angle ⁇ .
  • dark field illumination is generated in the area to be inspected on the surface of the wafer 2.
  • the dark field angle ⁇ is set by means of the ⁇ adjusting device 25, which allows the incident light illuminating device 5 to be pivoted about the wafer normal 12.
  • Edge stripping of photoresist layers can be checked.
  • the position of the outer edge of the photoresist layer remaining after the edge removal has been determined.
  • the position of the edge of this lacquer layer is given relative to a reference point.
  • the position of this edge in the camera image can be specified in relation to the first pixel of the image or to the first pixel of the respective image line.
  • the embodiment shown in FIG. 3 has an additional underside illumination device 22, which is arranged below the wafer 2 in its edge region.
  • the background illumination of the underside of the wafer 2 generated in this way produces a striking light / dark transition in the camera image along the wafer edge 23 shown.
  • the wafer underside illumination device 22 thus provides an exact representation of the wafer edge 23 in the image.
  • the edge of the edge-stripped photoresist is then determined by determining the brightest line in the image, in each case based on the image of the wafer edge 23.
  • the distance from the edge of the lacquer to the wafer edge 23 is then a measure of the edge stripping.
  • it can be checked whether the edge stripping has taken place or whether it has been completed.
  • the measured values of the edge stripping can then be made using the semiconductor manufacturers' target production specifications be compared. In the event of deviations, the manufacturing processes can be adapted accordingly to ensure an optimal yield in the manufacturing process.
  • FIG. 4 shows a side view of a device for wafer inspection, as has already been shown in FIG. 3.
  • a holding device 3 On the lower part of a stand 20 there is a holding device 3 on which a wafer 2 is placed.
  • the receiving device 3 is supplied with vacuum by means of a vacuum line 4, so that the wafer 2 can be sucked in.
  • the receiving device 3 is rotatable about its vertical axis, which is indicated by a double arrow. In this way, the wafer 2 is also rotated.
  • An imaging device 9 consisting of an objective 18 and a camera 19 is directed onto an edge region of the surface of the wafer 2 to be inspected.
  • the imaging device 9 has an imaging axis 10 which is inclined with respect to the surface of the wafer 2 and which
  • Wafer surface hits point 11.
  • a construction line that is perpendicular to the surface of the wafer 2 at this point of impact 11 is defined as the wafer normal 12.
  • the inclination of the imaging axis 10 with respect to this wafer normal 12 defines the imaging angle ⁇ .
  • a reflected light illuminating device 5 is also directed onto the edge region of the wafer surface to be inspected.
  • the incident light illuminating device 5 has an illuminating axis 14 which is inclined by an illuminating angle ⁇ with respect to the wafer normal 12.
  • the illumination angle ⁇ is equal to the imaging angle ⁇ .
  • the imaging axis 10 and the wafer normal 12 span a plane 13 which corresponds in the illustration to the plane of the drawing.
  • This plane 13 corresponds to the imaging plane that is spanned by the imaging axis 10 and the illumination axis 14 in the bright field setting of the device. Since the lighting axis 14 of the incident light illuminating device 5 is rotated out of this plane 13 by a dark field angle ⁇ , as shown in FIG. 1, the illuminating angle ⁇ drawn in FIG. 4 does not correspond to the actual illuminating angle ⁇ to scale. Rather, the illumination angle ⁇ shown in the plane of the drawing is shortened by projecting the actual spatial position of the illumination axis 14.
  • dark field illumination is generated on the surface of the wafer 2 by a suitable choice of the dark field angle ⁇ > 0 in the edge region to be inspected.
  • This allows the user of the device to adjust the dark field lighting to his particular problem, e.g. B. adapt to the size, height or optical properties (such as contrast, reflectivity, etc.) of the structures to be examined. This makes it particularly easier to examine low-contrast structures than with previously known bright-field lighting devices.
  • the incident light illuminating device 5 is arranged by means of a ⁇ adjusting device (not shown here) and the imaging device 9 is arranged on the mounting rail 15 by means of an adjusting rail 21, which is rigidly connected to the mounting element 8.
  • a ⁇ adjusting device not shown here
  • the imaging device 9 is arranged on the mounting rail 15 by means of an adjusting rail 21, which is rigidly connected to the mounting element 8.
  • Imaging device 9 can be varied and determined by means of the adjusting rail 21, so that different imaging angles ⁇ can be set.
  • the support rail 15 is arranged on a displaceable support element 8 which is fastened to the vertical part of the stand 20.
  • the support element 8 is horizontally displaceable, so that the unit consisting of incident light illuminating device 5 and imaging device 9 can be displaced together.
  • the wafer 2 can additionally be rotated about a vertical axis by means of the rotatable receiving device 3.
  • the image data generated by the camera during the inspection are transmitted to a data readout device 17 via a data line 16. There they are available for further processing and evaluation, for example by means of a computer (not shown).
  • the underside illumination device 22 is arranged below the wafer 2 and at the same time on the imaging axis 10.
  • the wafer underside illumination device 22 is thus positioned under the wafer 2 in such a way that it is imaged directly on the camera 19.
  • a line camera is used as the camera 19 and an LED line with a Fresnel lens in front is used as the wafer underside illumination device 22.
  • a wide variety of lenses 18 can be used in combination with the camera 19, both telecentric and non-telecentric lenses.
  • An example of a telecentric lens is the Sill S5LPJ2005 lens, from Sill Optics, Wendelstein, Germany.
  • the example of a device for wafer inspection described here has a polychromatic cold light source with fiber optics and a telecentric beam path as incident light illumination device 5.
  • An easy to Adjusting structure results from the fact that the illumination angle ⁇ is chosen equal to the imaging angle ⁇ . In principle, however, this is not necessary for the design of good dark field illumination of the area to be inspected on the wafer 2, since good dark field illumination is also achieved for other angular relationships.
  • a complete inspection of the entire wafer edge 23 or of the paint edge located in its vicinity is carried out by positioning the line camera 19 in relation to the surface of the wafer 2 in such a way that an edge region which runs radially on the wafer 2 is imaged on the camera line becomes.
  • the imaging particle is preferably ⁇ > 0 °, as shown in the illustration.
  • the wafer 2 is rotated about its vertical axis of rotation by rotating the receiving device 3.
  • the data readout device 17 for example a computer with a frame grabber, reads the line camera of the wafer 2 several times, e.g. at equal intervals.
  • the image data are then evaluated using special software and the position of the photoresist edge in relation to the wafer edge 23 is determined from each.
  • the position of the wafer flat or wafer notch can also be determined using the same method.
  • FIG. 5 shows the device for wafer inspection shown in FIG. 4 in a side view, which is rotated through 90 °.
  • the same device elements are designated by the same reference numerals.
  • An imaging device 9 and a lighting device 5 arranged inclined according to the invention are on an area to be inspected
  • Wafers 2 directed in the region of its wafer edge 23.
  • the positioning of the underside illumination device 22 below the wafer edge 23 is clearly visible.
  • the underside illumination device 22 is oriented such that it illuminates the wafer 2 from below and radiates beyond its wafer edge 23.
  • the light radiating beyond the wafer edge 23 is detected by the imaging device 9, so that the edge of the wafer edge 23 appears in the generated image as a striking light / dark transition.
  • the evaluation then takes place as already described in FIG. 4.
  • FIG. 6 shows a spatial arrangement of a device for wafer inspection, as has already been described in FIGS. 3, 4 and 5. Same
  • the imaging device 9 and the incident light illuminating device 5 inclined according to the invention are directed at an area of the wafer 2 to be inspected in the area of its wafer edge 23.
  • a wafer underside illumination device 22 illuminates the wafer 2 from below.
  • the image data recorded by the imaging device 9 are transmitted to a data readout device 17 via a data line 16. In the present example, this is designed as a computer.
  • the device for wafer inspection according to the invention can be installed as a separate inspection unit in the manufacturing process.
  • an automated handling device for the semi-automatic or fully automatic placement and removal of wafers 2 to be examined is provided in the device.

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L'invention concerne un dispositif d'inspection de plaquettes pourvu d'un système d'éclairage à lumière incidence présentant un axe d'éclairage ainsi que d'un système de reproduction présentant un axe de reproduction, ces deux systèmes étant inclinés l'un vers l'autre et dirigés vers une zone à inspecter de la surface d'une plaquette. Un plan de reproduction est défini par l'axe d'éclairage et l'axe de reproduction, par réglage de l'éclairage à fond clair dudit dispositif. Le dispositif selon l'invention est caractérisé en ce que l'axe d'éclairage est disposé de façon à sortir du plan de reproduction par rotation selon un angle de fond obscur Ϝ > 0, pour qu'un éclairage sur fond obscur soit généré dans la zone à inspecter.
PCT/EP2003/007677 2002-07-18 2003-07-16 Dispositif d'inspection de plaquettes WO2004010114A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004522463A JP2005533260A (ja) 2002-07-18 2003-07-16 ウェハ検査装置
AU2003250961A AU2003250961A1 (en) 2002-07-18 2003-07-16 Device for wafer inspection
EP03764995A EP1523670A2 (fr) 2002-07-18 2003-07-16 Dispositif d inspection de plaquettes
US11/037,668 US20050122509A1 (en) 2002-07-18 2005-01-18 Apparatus for wafer inspection

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DE10232781.5 2002-07-18
DE10232781A DE10232781B4 (de) 2002-07-18 2002-07-18 Vorrichtung zur Wafer-Inspektion

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US11/037,668 Continuation US20050122509A1 (en) 2002-07-18 2005-01-18 Apparatus for wafer inspection

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WO2004010114A2 true WO2004010114A2 (fr) 2004-01-29
WO2004010114A3 WO2004010114A3 (fr) 2004-10-21

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PCT/EP2003/007677 WO2004010114A2 (fr) 2002-07-18 2003-07-16 Dispositif d'inspection de plaquettes

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EP (1) EP1523670A2 (fr)
JP (1) JP2005533260A (fr)
AU (1) AU2003250961A1 (fr)
DE (1) DE10232781B4 (fr)
WO (1) WO2004010114A2 (fr)

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TWI601952B (zh) * 2016-01-25 2017-10-11 Wafer edge measurement module (a)

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DE102004029012B4 (de) * 2004-06-16 2006-11-09 Leica Microsystems Semiconductor Gmbh Verfahren zur Inspektion eines Wafers
DE502005008676D1 (de) * 2005-07-13 2010-01-21 Audi Ag Verfahren und Vorrichtung zur optischen Prüfung von Carbon-Keramik-Brems- und Kupplungskomponenten
DE102007042271B3 (de) * 2007-09-06 2009-02-05 Vistec Semiconductor Systems Gmbh Verfahren zur Bestimmung der Lage der Entlackungskante eines scheibenförmigen Objekts

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US5264912A (en) * 1992-02-07 1993-11-23 Tencor Instruments Speckle reduction track filter apparatus for optical inspection of patterned substrates
US5864394A (en) * 1994-06-20 1999-01-26 Kla-Tencor Corporation Surface inspection system
WO1999006823A1 (fr) * 1997-08-01 1999-02-11 Kla-Tencor Corporation Systeme permettant de deceler les anomalies et/ou les details d'une surface
EP1102058A1 (fr) * 1999-11-17 2001-05-23 Applied Materials, Inc. Méthode et appareil pour inspecter des articles

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Publication number Priority date Publication date Assignee Title
US5264912A (en) * 1992-02-07 1993-11-23 Tencor Instruments Speckle reduction track filter apparatus for optical inspection of patterned substrates
US5864394A (en) * 1994-06-20 1999-01-26 Kla-Tencor Corporation Surface inspection system
WO1999006823A1 (fr) * 1997-08-01 1999-02-11 Kla-Tencor Corporation Systeme permettant de deceler les anomalies et/ou les details d'une surface
EP1102058A1 (fr) * 1999-11-17 2001-05-23 Applied Materials, Inc. Méthode et appareil pour inspecter des articles

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI601952B (zh) * 2016-01-25 2017-10-11 Wafer edge measurement module (a)

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DE10232781A1 (de) 2004-02-05
JP2005533260A (ja) 2005-11-04
DE10232781B4 (de) 2013-03-28
AU2003250961A1 (en) 2004-02-09
WO2004010114A3 (fr) 2004-10-21
AU2003250961A8 (en) 2004-02-09
EP1523670A2 (fr) 2005-04-20

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