WO2003107400A3 - Acid etching mixture having reduced water content - Google Patents

Acid etching mixture having reduced water content Download PDF

Info

Publication number
WO2003107400A3
WO2003107400A3 PCT/US2003/019079 US0319079W WO03107400A3 WO 2003107400 A3 WO2003107400 A3 WO 2003107400A3 US 0319079 W US0319079 W US 0319079W WO 03107400 A3 WO03107400 A3 WO 03107400A3
Authority
WO
WIPO (PCT)
Prior art keywords
water content
acid etching
reduced water
etching mixture
acid
Prior art date
Application number
PCT/US2003/019079
Other languages
French (fr)
Other versions
WO2003107400A2 (en
Inventor
Michael A Dodd
Wolfgang Sievert
Kurt-Uwe Zimmerman
John Mcfarland
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP03737149A priority Critical patent/EP1516356A2/en
Priority to AU2003238253A priority patent/AU2003238253A1/en
Priority to JP2004514122A priority patent/JP2005530045A/en
Priority to KR10-2004-7020659A priority patent/KR20050013143A/en
Publication of WO2003107400A2 publication Critical patent/WO2003107400A2/en
Publication of WO2003107400A3 publication Critical patent/WO2003107400A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Acid etching mixtures having water content, reduced by the addition of fluorosulfonic acid. The preparation and the use of said acid etching mixtures, particularly in etching silicon, are also disclosed.
PCT/US2003/019079 2002-06-18 2003-06-18 Acid etching mixture having reduced water content WO2003107400A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP03737149A EP1516356A2 (en) 2002-06-18 2003-06-18 Acid etching mixture having reduced water content
AU2003238253A AU2003238253A1 (en) 2002-06-18 2003-06-18 Acid etching mixture having reduced water content
JP2004514122A JP2005530045A (en) 2002-06-18 2003-06-18 Acid etching mixture with reduced water content
KR10-2004-7020659A KR20050013143A (en) 2002-06-18 2003-06-18 Acid etching mixture having reduced water content

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/174,174 2002-06-18
US10/174,174 US20030230548A1 (en) 2002-06-18 2002-06-18 Acid etching mixture having reduced water content

Publications (2)

Publication Number Publication Date
WO2003107400A2 WO2003107400A2 (en) 2003-12-24
WO2003107400A3 true WO2003107400A3 (en) 2004-04-15

Family

ID=29733511

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/019079 WO2003107400A2 (en) 2002-06-18 2003-06-18 Acid etching mixture having reduced water content

Country Status (7)

Country Link
US (1) US20030230548A1 (en)
EP (1) EP1516356A2 (en)
JP (1) JP2005530045A (en)
KR (1) KR20050013143A (en)
CN (1) CN1679146A (en)
AU (1) AU2003238253A1 (en)
WO (1) WO2003107400A2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067015B2 (en) * 2002-10-31 2006-06-27 Texas Instruments Incorporated Modified clean chemistry and megasonic nozzle for removing backside CMP slurries
JP2006100799A (en) * 2004-09-06 2006-04-13 Sumco Corp Method of manufacturing silicon wafer
JP4642001B2 (en) * 2006-10-24 2011-03-02 関東化学株式会社 Composition for removing photoresist residue and polymer residue
DE102007004060B4 (en) * 2007-01-22 2013-03-21 Gp Solar Gmbh Use of an etching solution comprising water, nitric acid and sulfuric acid and etching process
TWI358467B (en) * 2007-12-07 2012-02-21 Nanya Technology Corp Etchant for metal alloy having hafnium and molybde
DE102007061687B4 (en) 2007-12-19 2010-04-29 Cpi Chemiepark Institut Gmbh Process for the matt etching of silicon substrates and etching mixture for carrying out the method
DE102009007136A1 (en) * 2009-02-02 2010-08-12 Sovello Ag Etching mixture for producing a structured surface on silicon substrates
KR20120135185A (en) * 2009-09-21 2012-12-12 바스프 에스이 Acqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
CN102534620A (en) * 2010-12-08 2012-07-04 无锡华润上华科技有限公司 Wet-process silicon etching solution for P-type wafer
US8647523B2 (en) * 2011-03-11 2014-02-11 Fujifilm Electronic Materials U.S.A., Inc. Etching composition
US8894877B2 (en) 2011-10-19 2014-11-25 Lam Research Ag Method, apparatus and composition for wet etching
US8986559B2 (en) * 2012-02-29 2015-03-24 Avantor Performance Materials, Inc. Compositions and methods for texturing polycrystalline silicon wafers
CN104624512A (en) * 2015-01-21 2015-05-20 江西久顺科技有限公司 Method for sorting P-type heavy-doped silicon material and N-type heavy-doped silicon material in dyeing manner
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
TWI538986B (en) * 2015-07-15 2016-06-21 綠能科技股份有限公司 Etching solution and method of surface roughening of silicon substrate
CN113299551B (en) * 2021-04-27 2023-05-02 南昌大学 Method for regulating and controlling semiconductor corrosion area

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1383662A (en) * 1964-03-05 1964-12-24 Bayer Ag Improved process for regenerating pickling baths containing hydrofluoric acid and sulfuric acid
JPS6092500A (en) * 1983-10-26 1985-05-24 Mitsubishi Heavy Ind Ltd Liquid composition for electropolishing niobium material and its preparation
EP0304857A2 (en) * 1987-08-27 1989-03-01 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Process and apparatus for etching the surface of semiconductors
EP0618612A2 (en) * 1993-03-23 1994-10-05 Matsushita Electric Industrial Co., Ltd. Method of cleaning semiconductor device and equipment for cleaning semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300463A (en) * 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
DE19805525C2 (en) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Process for wet-etching semiconductor wafers to produce a defined edge region by under-etching

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1383662A (en) * 1964-03-05 1964-12-24 Bayer Ag Improved process for regenerating pickling baths containing hydrofluoric acid and sulfuric acid
JPS6092500A (en) * 1983-10-26 1985-05-24 Mitsubishi Heavy Ind Ltd Liquid composition for electropolishing niobium material and its preparation
EP0304857A2 (en) * 1987-08-27 1989-03-01 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Process and apparatus for etching the surface of semiconductors
EP0618612A2 (en) * 1993-03-23 1994-10-05 Matsushita Electric Industrial Co., Ltd. Method of cleaning semiconductor device and equipment for cleaning semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section Ch Week 198527, Derwent World Patents Index; Class L03, AN 1985-162319, XP002265596 *
DÖRING, KARLHEINZ, SPRECHSAAL, vol. 116, no. 5, 1983, pages 366 - 370, XP001091350 *

Also Published As

Publication number Publication date
EP1516356A2 (en) 2005-03-23
JP2005530045A (en) 2005-10-06
CN1679146A (en) 2005-10-05
AU2003238253A1 (en) 2003-12-31
US20030230548A1 (en) 2003-12-18
WO2003107400A2 (en) 2003-12-24
AU2003238253A8 (en) 2003-12-31
KR20050013143A (en) 2005-02-02

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