CN104624512A - Method for sorting P-type heavy-doped silicon material and N-type heavy-doped silicon material in dyeing manner - Google Patents
Method for sorting P-type heavy-doped silicon material and N-type heavy-doped silicon material in dyeing manner Download PDFInfo
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- CN104624512A CN104624512A CN201510043376.5A CN201510043376A CN104624512A CN 104624512 A CN104624512 A CN 104624512A CN 201510043376 A CN201510043376 A CN 201510043376A CN 104624512 A CN104624512 A CN 104624512A
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Abstract
The invention relates to the technical field of the processing of a silicon material, and particularly relates to a method for sorting a P-type heavy-doped silicon material and an N-type heavy-doped silicon material in a dyeing manner. The method comprises the steps of preparing a corrosion solution, dyeing and sorting. By adopting the method for sorting the P-type and N-type heavy-doped silicon materials in the dyeing manner, according to a principle that a qualified material is doped in a low concentration, a heavy-doped material is doped in a high concentration, the qualified material and the heavy-doped material are different in model number, doping and chemical potential energy and different in complexing rate in the corrosion solution, and the P-type heavy-doped silicon material and the N-type heavy-doped silicon material are respectively dyed, so that the P-type heavy-doped silicon material and the N-type heavy-doped silicon material can be rapidly sorted, the sorting efficiency can be improved, a special sorting instrument is not needed, and the production cost is reduced.
Description
Technical field
The present invention relates to silicon material processing technique field, be specifically related to a kind of method of P type, N-type heavily-doped Si material dyeing sorting.
Background technology
Along with the development of large scale integrated circuit and photovoltaic industry, improving constantly of integrated level, more and more higher to the demand of silicon raw material, simultaneously also more and more higher to the quality requirement of silicon chip, in process of production, frequent needs process and recycle broken silicon material, and outside need removing apart from foreign material such as more stone, metal, fibers in broken silicon material, also running into the situation of P type and the heavily doped material of N-type being mixed with high-concentration dopant in the accept of low concentration doping, this part heavily-doped Si material need be sorted away when clearing up broken silicon material; Existing P type, N-type heavily-doped Si material method for sorting, because of the bad differentiation close to accept color of heavily doped material, therefore normally adopt instrument sorting, the purchase cost of instrument is higher, and the heavily doped length consuming time of instrument sorting, work efficiency is poor, is unfavorable for that large batch of broken silicon material is recycled.
Summary of the invention
Object of the present invention aims to provide a kind of method of P type, N-type heavily-doped Si material dyeing sorting, can from accept, rapid sorting is out by P type, N-type heavily-doped Si material.
For achieving the above object, the method for a kind of P type of the present invention, N-type heavily-doped Si material dyeing sorting, comprises the following steps: preparation corrosive liquid → dyeing → sorting,
1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 11-13,70% concentration nitric acid 950-1050,85% concentration phosphoric acid 9.5-10.5, be placed in fermentation vat, now with the current; 2) dye: broken silicon wafers to be sorted is placed in the step 1 in fermentation vat) corrosive liquid prepared, soak 3-4 hour, after soaking, the heavily doped dye of P type is black-and-blue, and the heavily doped dye of N-type is filbert; 3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
The method of a kind of P type of the present invention, N-type heavily-doped Si material dyeing sorting compared with prior art has following excellent effect.
Adopt the method for P type of the present invention, N-type heavily-doped Si material dyeing sorting, according to accept be low concentration doping, heavily doped material is high-concentration dopant, and their model is different, doping is different, chemical potential can be not identical yet, to such an extent as to the principle of complexing speed faster or slower in corrosive liquid, P type, N-type heavily-doped Si material are dyeed respectively, thus P type, N-type heavily-doped Si material can be gone out by rapid sorting, improve the work efficiency of sorting, and do not need, by special sorting instrument, to reduce production cost.
Detailed description of the invention
A kind ofly remove the method for impurity in broken silicon wafers to of the present invention and be described in further detail below.
The method of a kind of P type of the present invention, N-type heavily-doped Si material dyeing sorting, comprises the following steps: preparation corrosive liquid → dyeing → sorting,
1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 11-13,70% concentration nitric acid 950-1050,85% concentration phosphoric acid 9.5-10.5, be placed in fermentation vat, now with the current; 2) dye: broken silicon wafers to be sorted is placed in the step 1 in fermentation vat) corrosive liquid prepared, soak 3-4 hour, after soaking, the heavily doped dye of P type is black-and-blue, and the heavily doped dye of N-type is filbert; 3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
Embodiment 1:
A method for P type, N-type heavily-doped Si material dyeing sorting, comprises the following steps:
1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 11,70% concentration nitric acid 950,85% concentration phosphoric acid 9.5, be placed in fermentation vat, now with the current; 2) dye: broken silicon wafers to be sorted is placed in the step 1 in fermentation vat) corrosive liquid prepared, soaks 3 hours, it is black-and-blue for soaking the heavily doped dye of P type afterwards, and the heavily doped dye of N-type is filbert; 3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
Embodiment 2:
A method for P type, N-type heavily-doped Si material dyeing sorting, comprises the following steps:
1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 12,70% concentration nitric acid 1000,85% concentration phosphoric acid 10, be placed in fermentation vat, now with the current; 2) dye: broken silicon wafers to be sorted is placed in the step 1 in fermentation vat) corrosive liquid prepared, soaks 3.5 hours, it is black-and-blue for soaking the heavily doped dye of P type afterwards, and the heavily doped dye of N-type is filbert; 3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
Embodiment 3:
A method for P type, N-type heavily-doped Si material dyeing sorting, comprises the following steps:
1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 13,70% concentration nitric acid 1050,85% concentration phosphoric acid 10.5, be placed in fermentation vat, now with the current; 2) dye: broken silicon wafers to be sorted is placed in the step 1 in fermentation vat) corrosive liquid prepared, soaks 4 hours, it is black-and-blue for soaking the heavily doped dye of P type afterwards, and the heavily doped dye of N-type is filbert; 3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
Above embodiment illustrating only to spirit of the present invention, those skilled in the art can make the amendment of different modes or supplement or adopt similar mode to replace to described embodiment, but not depart from the scope that spirit of the present invention defines.
Claims (4)
1. a method for P type, N-type heavily-doped Si material dyeing sorting, comprises the following steps: preparation corrosive liquid → dyeing → sorting, is characterized in that:
(1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 11-13,70% concentration nitric acid 950-1050,85% concentration phosphoric acid 9.5-10.5, be placed in fermentation vat, now with the current; (2) dye: broken silicon wafers to be sorted is placed in the corrosive liquid that the step (1) in fermentation vat is prepared, soak 3-4 hour, after soaking, the heavily doped dye of P type is black-and-blue, and the heavily doped dye of N-type is filbert; (3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
2. the method for P type according to claim 1, N-type heavily-doped Si material dyeing sorting, is characterized in that:
(1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 11,70% concentration nitric acid 950,85% concentration phosphoric acid 9.5, be placed in fermentation vat, now with the current; (2) dye: broken silicon wafers to be sorted is placed in the corrosive liquid that the step (1) in fermentation vat is prepared, soaks 3 hours, after soaking, the heavily doped dye of P type is black-and-blue, and the heavily doped dye of N-type is filbert; (3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
3. the method for P type according to claim 1, N-type heavily-doped Si material dyeing sorting, is characterized in that:
(1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 12,70% concentration nitric acid 1000,85% concentration phosphoric acid 10, be placed in fermentation vat, now with the current; (2) dye: broken silicon wafers to be sorted is placed in the corrosive liquid that the step (1) in fermentation vat is prepared, soaks 3.5 hours, after soaking, the heavily doped dye of P type is black-and-blue, and the heavily doped dye of N-type is filbert; (3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
4. the method for P type according to claim 1, N-type heavily-doped Si material dyeing sorting, is characterized in that:
(1) corrosive liquid is prepared: get 55% concentration hydrogen fluoric acid 13,70% concentration nitric acid 1050,85% concentration phosphoric acid 10.5, be placed in fermentation vat, now with the current; (2) dye: broken silicon wafers to be sorted is placed in the corrosive liquid that the step (1) in fermentation vat is prepared, soaks 4 hours, after soaking, the heavily doped dye of P type is black-and-blue, and the heavily doped dye of N-type is filbert; (3) sort: after proceeding to the broken silicon wafers after soaking with pure water leaching drift 20 minutes in potcher, leaching drift terminates, drying, the black-and-blue P type in broken silicon wafers of sorting out is heavily doped and filbert N-type is heavily doped.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111232987A (en) * | 2020-04-10 | 2020-06-05 | 昆明理工大学 | Method for efficiently recovering elemental silicon in industrial silicon slag |
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| CN111232987A (en) * | 2020-04-10 | 2020-06-05 | 昆明理工大学 | Method for efficiently recovering elemental silicon in industrial silicon slag |
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