CN113145553A - Classifying method for cast monocrystalline silicon wafers - Google Patents
Classifying method for cast monocrystalline silicon wafers Download PDFInfo
- Publication number
- CN113145553A CN113145553A CN202110168905.XA CN202110168905A CN113145553A CN 113145553 A CN113145553 A CN 113145553A CN 202110168905 A CN202110168905 A CN 202110168905A CN 113145553 A CN113145553 A CN 113145553A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- cast
- monocrystalline silicon
- washing
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000012431 wafers Nutrition 0.000 title claims abstract description 72
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005406 washing Methods 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 239000002253 acid Substances 0.000 claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims abstract description 12
- 238000002791 soaking Methods 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 28
- 230000007547 defect Effects 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 17
- 229910017604 nitric acid Inorganic materials 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 10
- 238000005554 pickling Methods 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 2
- 230000005587 bubbling Effects 0.000 claims description 2
- 238000010923 batch production Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/34—Sorting according to other particular properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention relates to a classification method of a cast monocrystalline silicon piece, which comprises the following steps of A, corroding, namely soaking the cast monocrystalline silicon piece in corrosive liquid for corroding; b, acid washing, namely carrying out acid washing on the cast monocrystalline silicon wafer subjected to corrosion treatment in the step A; c, washing, namely washing the cast monocrystalline silicon wafer subjected to acid washing in the step B; d, drying, namely drying the cast monocrystalline silicon wafer subjected to the washing treatment in the step C; and E, classifying the cast monocrystalline silicon wafer dried in the step D according to appearance morphology. The invention aims to provide a classification method of cast monocrystalline silicon wafers, which is low in cost and capable of rapidly and accurately distinguishing the quality of the silicon wafers so as to improve the yield of solar cells in batch production.
Description
Technical Field
The invention relates to a classification method of cast monocrystalline silicon wafers.
Background
In the photovoltaic industry, two crystalline silicon materials, namely monocrystalline silicon and polycrystalline silicon, are main materials for preparing solar cells. The monocrystalline silicon is used for preparing the battery, the conversion efficiency of the battery is high, but the single feeding is less, and the cost is higher; the battery prepared by the polysilicon has the advantages of large single feeding, low process cost, high impurity content and defect density and lower conversion efficiency.
The cast monocrystalline silicon material is a material between monocrystalline silicon and polycrystalline silicon. The advantages of monocrystalline silicon and polycrystalline silicon are combined, fewer structural defects such as crystal boundaries, dislocation, stacking faults and the like are achieved, and meanwhile, the cost is far lower than that of monocrystalline silicon materials due to the fact that the monocrystalline silicon solar cell is produced by the ingot casting method, so that the casting of the monocrystalline silicon solar cell becomes the development direction of future solar cells.
At present, the preparation technology of the cast monocrystalline silicon wafer is gradually mature, and a part of enterprises begin to produce the monocrystalline silicon wafer in batches. However, after the same batch of silicon wafers with the same appearance are prepared into batteries, the efficiency difference is too large, and the mass production of high-efficiency battery pieces is difficult to realize.
Disclosure of Invention
The invention aims to provide a classification method of cast monocrystalline silicon wafers, which is low in cost and capable of rapidly and accurately distinguishing the quality of the silicon wafers so as to improve the yield of solar cells in batch production.
The purpose of the invention is realized by the following technical scheme:
a classification method of a cast monocrystalline silicon wafer comprises the following steps
A, corroding, namely soaking the cast monocrystalline silicon wafer in a corrosive liquid for corroding;
b, acid washing, namely carrying out acid washing on the cast monocrystalline silicon wafer subjected to corrosion treatment in the step A;
c, washing, namely washing the cast monocrystalline silicon wafer subjected to acid washing in the step B;
d, drying, namely drying the cast monocrystalline silicon wafer subjected to the washing treatment in the step C;
and E, classifying the cast monocrystalline silicon wafer dried in the step D according to appearance morphology.
Compared with the prior art, the invention has the advantages that:
(1) the method can quickly and accurately distinguish the quality of the silicon wafers, is accurate in classification and low in cost, and improves the production yield of the solar cell.
(2) The surface defect portion of the cast single crystal silicon wafer is displayed by a chemical etching method, and compared with PL (photoluminescence) technology, the operation cost is low, and the method is rapid and accurate.
(3) The silicon wafers are classified according to the surface defect area proportion shown by the cast monocrystalline silicon wafers, and the silicon wafers are combined with silicon wafer sorting equipment, so that the full-automatic production classification requirement of the silicon wafers can be met, the popularization of a production mode and the application of the equipment are facilitated, the reject ratio of the downstream battery piece of the silicon wafer is reduced, and the competitiveness is improved.
Drawings
FIG. 1 is a schematic flow chart of a classification method of a cast single crystal silicon wafer according to the present invention.
FIG. 2 is a cast single crystal silicon wafer master.
FIG. 3 is a cast single crystal silicon wafer after being subjected to the classifying method.
Detailed Description
The invention is described in detail below with reference to the drawings and examples of the specification:
fig. 1 to 3 are schematic diagrams illustrating an exemplary classification method of a cast single crystal silicon wafer according to the present invention.
A classification method for casting monocrystalline silicon wafers is characterized in that: it comprises the following steps
A, corroding, namely soaking the cast monocrystalline silicon piece in a corrosive liquid to corrode so as to show a surface defect part on the cast monocrystalline silicon piece; the surface defects comprise grain boundaries, dislocation, stacking faults, small-angle subgrain grain boundaries, slippage and the like;
b, acid washing, namely carrying out acid washing on the cast monocrystalline silicon wafer subjected to corrosion treatment in the step A to remove an oxide layer on the surface;
c, washing, namely washing the cast monocrystalline silicon wafer subjected to acid washing in the step B;
d, drying, namely drying the cast monocrystalline silicon wafer subjected to the washing treatment in the step C;
and E, classifying the cast monocrystalline silicon wafer dried in the step D according to appearance morphology.
The specific method for etching in the step A comprises the steps of soaking the cast monocrystalline silicon wafer in an acidic etching solution for etching; the corrosion temperature is 5-10 ℃, and the corrosion time is 5-60 seconds.
The corrosive liquid is a mixed solution of hydrofluoric acid, nitric acid and water or a mixed solution of hydrofluoric acid, nitric acid and acetic acid.
The volume ratio of the mixed solution of the hydrofluoric acid, the nitric acid and the water is VHF:VHNO3:VH2O(1-1.5) to (2-5) to (2.5-4.0); of said hydrofluoric acid, nitric acid and acetic acidThe volume ratio of the mixed solution is VHF:VHNO3:VCH3COOH(1-2) to (2-5) to (1-2.5); the content of the hydrofluoric acid is more than or equal to 40%, the content of the nitric acid is more than or equal to 45%, and the content of the acetic acid is more than or equal to 36%.
B, the pickling is carried out by soaking the cast monocrystalline silicon wafer in a pickling solution to remove an oxide layer on the surface; the pickling temperature is 15-25 ℃, and the pickling time is 180-300 seconds.
The acid washing solution is a mixed solution of hydrofluoric acid and water; the mass percentage of the hydrofluoric acid is 2% -5%.
And C, the specific method of the water washing treatment comprises the step of soaking the cast monocrystalline silicon wafer in water for circulating bubbling water washing, wherein the water washing time is 2-5 minutes.
The step E of classification treatment specifically comprises the steps of classifying the cast monocrystalline silicon wafers by using a silicon wafer sorter; the silicon wafer sorting machine is full-automatic sorting equipment with a testing module for detecting the surface defects of the silicon wafers, can convert scattered light collected at the surface defects of the cast monocrystalline silicon wafers into electric signals so as to obtain the surface defect areas of the detected cast monocrystalline silicon wafers, and then sorts the silicon wafers according to preset quality grades; the quality grades are divided by taking the surface defect area ratio as a standard.
The quality grades are divided into A class, B class and C class; wherein the proportion of the area of the A-type surface defect is 0-10%, the proportion of the area of the B-type surface defect is 10-30%, and the proportion of the area of the C-type surface defect is 30-100%.
The surface defect part of the cast monocrystalline silicon wafer is displayed by adopting a chemical corrosion method, the corrosive liquid is mixed acid solution, and because atoms near the defect in the crystal deviate from the normal lattice point position, the strain is large, the acid corrosion has strong action on the defect position, and the corrosion pit is formed by corrosion firstly. Compared with the conventional detection method, the method does not need equipment detection, and is simple and easy to operate.
Claims (9)
1. A classification method for casting monocrystalline silicon wafers is characterized in that: it comprises the following steps
A, corroding, namely soaking the cast monocrystalline silicon wafer in a corrosive liquid for corroding;
b, acid washing, namely carrying out acid washing on the cast monocrystalline silicon wafer subjected to corrosion treatment in the step A;
c, washing, namely washing the cast monocrystalline silicon wafer subjected to acid washing in the step B;
d, drying, namely drying the cast monocrystalline silicon wafer subjected to the washing treatment in the step C;
and E, classifying the cast monocrystalline silicon wafer dried in the step D according to appearance morphology.
2. The method of classifying a cast single crystal silicon wafer according to claim 1, wherein: the specific method for etching in the step A comprises the steps of soaking the cast monocrystalline silicon wafer in an acidic etching solution for etching; the corrosion temperature is 5-10 ℃, and the corrosion time is 5-60 seconds.
3. The method of classifying a cast single crystal silicon wafer according to claim 2, wherein: the corrosive liquid is a mixed solution of hydrofluoric acid, nitric acid and water or a mixed solution of hydrofluoric acid, nitric acid and acetic acid.
4. The classification method for cast single crystal silicon wafers as claimed in claim 3, wherein: the volume ratio of the mixed solution of the hydrofluoric acid, the nitric acid and the water is VHF:VHNO3:VH2O(1-1.5) to (2-5) to (2.5-4.0); the volume ratio of the mixed solution of the hydrofluoric acid, the nitric acid and the acetic acid is VHF:VHNO3:VCH3COOH(1-2) to (2-5) to (1-2.5); the content of the hydrofluoric acid is more than or equal to 40%, the content of the nitric acid is more than or equal to 45%, and the content of the acetic acid is more than or equal to 36%.
5. The method of classifying a cast single crystal silicon wafer according to claim 1, wherein: b, the pickling is carried out by soaking the cast monocrystalline silicon wafer in a pickling solution to remove an oxide layer on the surface; the pickling temperature is 15-25 ℃, and the pickling time is 180-300 seconds.
6. The method of classifying a cast single crystal silicon wafer according to claim 5, wherein: the acid washing solution is a mixed solution of hydrofluoric acid and water; the mass percentage of the hydrofluoric acid is 2% -5%.
7. The method of classifying a cast single crystal silicon wafer according to claim 1, wherein: and C, the specific method of the water washing treatment comprises the step of soaking the cast monocrystalline silicon wafer in water for circulating bubbling water washing, wherein the water washing time is 2-5 minutes.
8. The method of classifying a cast single crystal silicon wafer according to any one of claims 1 to 7, wherein: the step E of classification treatment specifically comprises the steps of classifying the cast monocrystalline silicon wafers by using a silicon wafer sorter; the silicon wafer sorting machine is full-automatic sorting equipment with a testing module for detecting the surface defects of the silicon wafers, can convert scattered light collected at the surface defects of the cast monocrystalline silicon wafers into electric signals so as to obtain the surface defect areas of the detected cast monocrystalline silicon wafers, and then sorts the silicon wafers according to preset quality grades; the quality grades are divided by taking the surface defect area ratio as a standard.
9. The method of classifying a cast single crystal silicon wafer according to claim 8, wherein: the quality grades are divided into A class, B class and C class; wherein the proportion of the area of the A-type surface defect is 0-10%, the proportion of the area of the B-type surface defect is 10-30%, and the proportion of the area of the C-type surface defect is 30-100%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110168905.XA CN113145553A (en) | 2021-02-07 | 2021-02-07 | Classifying method for cast monocrystalline silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110168905.XA CN113145553A (en) | 2021-02-07 | 2021-02-07 | Classifying method for cast monocrystalline silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113145553A true CN113145553A (en) | 2021-07-23 |
Family
ID=76882831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110168905.XA Pending CN113145553A (en) | 2021-02-07 | 2021-02-07 | Classifying method for cast monocrystalline silicon wafers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113145553A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115945431A (en) * | 2022-12-15 | 2023-04-11 | 无锡升滕半导体技术有限公司 | Special semiconductor equipment spare part belt cleaning device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6521466B1 (en) * | 2002-04-17 | 2003-02-18 | Paul Castrucci | Apparatus and method for semiconductor wafer test yield enhancement |
| CN101672801A (en) * | 2009-09-23 | 2010-03-17 | 中国科学院上海光学精密机械研究所 | Silicon Wafer Surface Defect Detector with Defect Classification Capability and Defect Classification Method |
| CN202398542U (en) * | 2011-12-21 | 2012-08-29 | 韩华新能源（启东）有限公司 | Solar-energy original silicon chip full-automatic measurement and separation equipment |
| CN104900758A (en) * | 2015-05-25 | 2015-09-09 | 连云港市产品质量监督检验中心 | Method for detecting microdefects of quasi monocrystalline silicon sheets |
| CN107245760A (en) * | 2017-05-10 | 2017-10-13 | 苏州日弈新电子科技有限公司 | The processing method of silicon chip of solar cell |
| CN109086827A (en) * | 2018-08-10 | 2018-12-25 | 北京百度网讯科技有限公司 | Method and apparatus for detecting monocrystaline silicon solar cell defect |
| CN110379736A (en) * | 2019-07-09 | 2019-10-25 | 无锡奥特维科技股份有限公司 | Silicon wafer sorting machine |
| CN111778556A (en) * | 2020-07-10 | 2020-10-16 | 物生生物科技(北京)有限公司 | Method for improving epitaxial growth of monocrystalline diamond seed crystal by utilizing defects and impurities |
-
2021
- 2021-02-07 CN CN202110168905.XA patent/CN113145553A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6521466B1 (en) * | 2002-04-17 | 2003-02-18 | Paul Castrucci | Apparatus and method for semiconductor wafer test yield enhancement |
| CN101672801A (en) * | 2009-09-23 | 2010-03-17 | 中国科学院上海光学精密机械研究所 | Silicon Wafer Surface Defect Detector with Defect Classification Capability and Defect Classification Method |
| CN202398542U (en) * | 2011-12-21 | 2012-08-29 | 韩华新能源（启东）有限公司 | Solar-energy original silicon chip full-automatic measurement and separation equipment |
| CN104900758A (en) * | 2015-05-25 | 2015-09-09 | 连云港市产品质量监督检验中心 | Method for detecting microdefects of quasi monocrystalline silicon sheets |
| CN107245760A (en) * | 2017-05-10 | 2017-10-13 | 苏州日弈新电子科技有限公司 | The processing method of silicon chip of solar cell |
| CN109086827A (en) * | 2018-08-10 | 2018-12-25 | 北京百度网讯科技有限公司 | Method and apparatus for detecting monocrystaline silicon solar cell defect |
| CN110379736A (en) * | 2019-07-09 | 2019-10-25 | 无锡奥特维科技股份有限公司 | Silicon wafer sorting machine |
| CN111778556A (en) * | 2020-07-10 | 2020-10-16 | 物生生物科技(北京)有限公司 | Method for improving epitaxial growth of monocrystalline diamond seed crystal by utilizing defects and impurities |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115945431A (en) * | 2022-12-15 | 2023-04-11 | 无锡升滕半导体技术有限公司 | Special semiconductor equipment spare part belt cleaning device |
| CN115945431B (en) * | 2022-12-15 | 2024-02-02 | 无锡升滕半导体技术有限公司 | Special semiconductor device spare part belt cleaning device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7192885B2 (en) | Method for texturing surfaces of silicon wafers | |
| CN104900758A (en) | Method for detecting microdefects of quasi monocrystalline silicon sheets | |
| CN102629644B (en) | Reworking technology of finished crystalline silicon solar cell | |
| CN104112850B (en) | A kind of preparation method and application of the lithium ion battery negative material based on photovoltaic industry scrap silicon | |
| KR101092259B1 (en) | Methode for recycling silicon from waste solar cell | |
| CN108807569B (en) | Preparation method of surface micron/nano composite structure of single crystal battery piece | |
| CN113817472B (en) | Texturing process of solar cell silicon wafer | |
| CN113145553A (en) | Classifying method for cast monocrystalline silicon wafers | |
| Tan et al. | On the electronic improvement of multi‐crystalline silicon via gettering and hydrogenation | |
| Xu et al. | Application of phosphorus diffusion gettering process on upgraded metallurgical grade Si wafers and solar cells | |
| Sopori et al. | Characterizing damage on Si wafer surfaces cut by slurry and diamond wire sawing | |
| CN101976700B (en) | Post-cleaning technology of silicon wafer | |
| Peter et al. | Future potential for SoG-Si feedstock from the metallurgical process route | |
| CN110591832A (en) | Efficient environment-friendly pollution-free silicon wafer cleaning agent and preparation method thereof | |
| Hoffmann et al. | First results on industrialization of Elkem solar silicon at Pillar JSC and Q-Cells | |
| Condorelli et al. | High efficiency hetero-junction: from pilot line to industrial production | |
| CN112447544B (en) | Silicon wafer quality detection method and classification method | |
| Zhong et al. | Performance of solar cells fabricated from cast quasi-single crystalline silicon ingots | |
| CN110743892A (en) | Method for recycling crystalline silicon photovoltaic material | |
| Fathi | Delineation of crystalline extended defects on multicrystalline silicon wafers | |
| WO2012022476A1 (en) | Chemical solutions for texturing microcrystalline silicon wafers for solar cell manufacturing | |
| CN102040222B (en) | Method for separating silicon material from heavily doped silicon material | |
| CN115172488A (en) | Solar cell and manufacturing method thereof | |
| CN112847851A (en) | Processing method of single crystal silicon rod, silicon wafer, battery piece and photovoltaic module | |
| Laades et al. | Wet-chemical treatment of solar grade Cz silicon prior to surface passivation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210723 |
|
| RJ01 | Rejection of invention patent application after publication |