WO2003102557A1 - Procede pour mesurer des caracteristiques electriques d'un substrat plat au moyen d'une lumiere terahertz - Google Patents

Procede pour mesurer des caracteristiques electriques d'un substrat plat au moyen d'une lumiere terahertz Download PDF

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Publication number
WO2003102557A1
WO2003102557A1 PCT/JP2003/006887 JP0306887W WO03102557A1 WO 2003102557 A1 WO2003102557 A1 WO 2003102557A1 JP 0306887 W JP0306887 W JP 0306887W WO 03102557 A1 WO03102557 A1 WO 03102557A1
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WO
WIPO (PCT)
Prior art keywords
light
terahertz
time
substrate
flat substrate
Prior art date
Application number
PCT/JP2003/006887
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English (en)
Japanese (ja)
Inventor
Ryoichi Fukasawa
Toshiyuki Iwamoto
Original Assignee
Nikon Corporation
Tochigi Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation, Tochigi Nikon Corporation filed Critical Nikon Corporation
Priority to AU2003241695A priority Critical patent/AU2003241695A1/en
Publication of WO2003102557A1 publication Critical patent/WO2003102557A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor

Definitions

  • the present invention relates to a method for measuring electric characteristics of a flat substrate using terahertz time-domain spectroscopy.
  • 2000-282497 discloses a method of measuring a time-series waveform using terahertz time-domain spectroscopy, performing a Fourier transform on the time-series waveform, and performing spectral reflectance or spectral transmission of a semiconductor material.
  • the electrical characteristics parameters are calculated based on this value. Disclosure of the invention
  • the cross-sectional shape in the thickness direction of the board is made to be wedge-shaped, or the backside of the board is made rough and diffusely reflected. I was working to eliminate the returning light.
  • processing a semiconductor sample to be measured in a semiconductor manufacturing process is not desirable because it cannot be used as a product and processing is troublesome. Therefore, there is a demand for the development of a simple measuring method for measuring these electrical characteristics without processing a semiconductor sample in the semiconductor device manufacturing process.
  • An object of the present invention is to provide a method for simply measuring the electrical characteristics of a semiconductor sample without being affected by a thousand fringes caused by multiple reflection inside a semiconductor substrate.
  • the method for measuring the electrical characteristics of a flat substrate using terahertz light is a method for repeatedly irradiating a terahertz pulsed light to a flat substrate and receiving reflected light or transmitted light from the flat substrate.
  • a time domain for detecting terahertz pulse light from the flat substrate is set, and time domain spectroscopy is used.
  • the time series waveform of the electric field intensity of the detected light is measured, and the electrical characteristic parameters of the flat substrate are calculated from the spectral reflectance or the spectral transmittance obtained based on the time series waveform.
  • the method for measuring electrical characteristics of a flat substrate using terahertz light includes: irradiating a terahertz pulse light repeatedly to a flat substrate; receiving reflected light or transmitted light from the flat substrate; Using time-domain spectroscopy, measure the time-series waveform of the electric field intensity of the received light, and Fourier transform only a predetermined time range on the time-series waveform to obtain the spectral reflectance or spectral transmittance. This is to calculate the electrical characteristics and parameters of the flat substrate from the spectral reflectance or spectral transmittance.
  • an apparatus for measuring electrical properties of a flat substrate using terahertz light comprising: a laser light source that emits light pulses; A terahertz light source for irradiating a plate, a terahertz photodetector for receiving reflected light or transmitted light from a flat substrate, a light pulse, and one is guided to the terahertz light source, and the other is guided to the terahertz light source.
  • An apparatus for measuring electrical characteristics of a planar substrate using terahertz light includes a laser light source that emits a light pulse, and a terahertz light source that repeatedly irradiates a planar substrate with terahertz pulsed light.
  • a terahertz photodetector that receives reflected light or transmitted light from a planar substrate; and an optical system that splits an optical pulse and guides one to the terahertz light source and the other to the terahertz light detector. And an arithmetic unit that measures the time-series waveform of the terahertz pulse light from the flat substrate received by the terahertz photodetector and performs a Fourier transform on only a predetermined time range on the time-series waveform.
  • FIG. 1 is a schematic configuration diagram of an electric characteristic measuring device used in the electric characteristic measuring method according to the embodiment of the present invention.
  • Figure 2 shows a time-series waveform
  • FIG. 3 is a schematic diagram showing a state of multiple reflection of light inside the semiconductor substrate.
  • FIG. 4 is a reflectance spectrum obtained from the time-series waveform of FIG.
  • FIG. 5 is a time-series waveform according to the embodiment of the present invention.
  • FIG. 6 is a reflectance spectrum obtained from the time-series waveform of FIG.
  • FIG. 7 is a measured value of the reflectance spectrum excluding the influence of interference fringes according to the embodiment of the present invention.
  • FIG. 8 is a calculated value of the reflectance spectrum excluding the influence of Chikko Fringe.
  • FIG. 9 is a graph showing the relationship between the carrier concentration obtained by the electrical characteristic measuring method according to the embodiment of the present invention and the carrier concentration obtained from the film forming conditions.
  • FIG. 10 shows the relationship between the carrier concentration and the mobility obtained by the electrical property measurement method according to the embodiment of the present invention, and the relationship between the carrier concentration and the mobility obtained from the electrical measurement. It is a graph which shows a comparison.
  • FIG. 11 is a flowchart showing the procedure of the electrical characteristic measuring method according to the embodiment of the present invention.
  • Terahertz time-domain spectroscopy measures the time-series waveform E (t) of the electric field intensity of the terahertz pulse light, and performs Fourier transform on the time-series waveform to obtain a reflectance spectrum or a transmittance spectrum. This is the spectroscopy that gives Based on the spectral reflectance or the spectral transmittance, the electrical characteristics of the planar substrate, that is, physical properties such as carrier concentration, mobility, resistivity, and electrical conductivity can be obtained.
  • FIG. 1 is a schematic configuration diagram of an electric characteristic measuring apparatus using terahertz light of the present invention, and is also a diagram for explaining time-domain spectroscopy.
  • the light pulse emitted from the femtosecond pulse laser 1 passes through the beam splitter 2 and is divided into a pump pulse L1 and a probe pulse L2.
  • the pump pulse L1 is guided to the terahertz light source 3, and irradiates the terahertz light source 3 to generate the terahertz pulse light L3.
  • the probe pulse L 2 is guided to the terahertz photodetector 4 to receive (detect) the terahertz pulse light that has passed through the semiconductor sample (semiconductor substrate) 5.
  • a movable mirror 6 is provided on the optical path for guiding the probe pulse L2, and moving the movable mirror 6 in the direction indicated by the arrow changes the time for the probe pulse L2 to reach the terahertz photodetector 4. Can be done.
  • the movable mirror 6 and the drive mechanism 7 for displacing the movable mirror 6 in the direction of the arrow are called a time delay device.
  • the pulse width of the light pulses emitted from Fuemuto second pulse laser 1 is about lOOfsec (1 X 1 0- 1 3 sec), the repetition period is several tens MH z. Therefore, the emitted terahertz pulse light L 3 is also emitted at a repetition of several tens of MHz.
  • the waveform of the terahertz pulse light cannot be measured instantaneously as it is. Therefore, this measurement method utilizes the fact that the terahertz pulse light L4 of the same waveform arrives at the terahertz photodetector 4 at a repetition rate of several tens of MHz.
  • the pump-probe method is used to measure the terahertz pulse light waveform with a time delay between the two. That is, by delaying the timing of the probe pulse L 2 for operating the terahertz light detector 4 by ⁇ t seconds with respect to the pump pulse L 1 for operating the terahertz light source 3, the time delayed by ⁇ t seconds The electric field intensity of the terahertz pulse light L4 can be measured. In other words, the probe pulse L 2 gates the terahertz photodetector 4. Also, moving the movable mirror 6 gradually is nothing more than gradually changing the time ⁇ t.
  • the terahertz pulse light L4 that repeatedly arrives is detected while shifting the timing of applying a gate by a time delay device, and these terahertz pulse lights L4 are spliced to reproduce one waveform. is there.
  • the time-series waveform E (t) of the electric field of the terahertz light can be measured.
  • the terahertz photodetector 4 generates a carrier according to the incidence of the probe pulse L2. If a terahertz pulse light L4 is incident at the same time as the probe pulse L2 is incident and an electric field is generated, a photoconductive current proportional to the electric field flows.
  • the current J (t) measured at this time is expressed by the convolution of the electric field strength E (t) of the terahertz pulse light and the optical conductivity g (te1 t) of the photoexcited carrier as shown in equation (1).
  • FIG. 2 is a time-series waveform of the electric field E (t) of the terahertz pulse light obtained in this manner.
  • This time-series waveform is a result of actually measuring the semiconductor sample 5 using the terahertz time-domain spectroscopy with the electric characteristic measuring apparatus of FIG. In this measurement, 1024 points were measured at a sampling interval ⁇ t of time-series waveform data of 0.06667 ps.
  • FIG. 3 is a schematic diagram showing a state of multiple reflection inside the semiconductor substrate 5.
  • Semiconduct An epitaxy film 8 is formed on the substrate 5, and a part of the incident light incident from the epitaxy film 8 side is reflected on the substrate surface (that is, the epitaxy film 8), and a part of the light is reflected inside the substrate. Through. A part of the light transmitted through the inside of the substrate is reflected on the back surface of the substrate, and the light is transmitted through the inside of the substrate again, emitted from the surface of the substrate, and returned to the inside of the substrate again. Such repetitive reflection is called multiple reflection.
  • the first peak P 1 is caused by the reflection of the terahertz pulse light on the surface of the semiconductor substrate 5, and the second peak P 2 is caused by the reflection of the terahertz pulse light on the back surface of the substrate 5. are doing.
  • peak P 3 is caused by two reflections on the back surface of substrate 5, and peak P 4 is caused by reflection three times on the back surface of substrate 5.
  • the numbers of the multiple reflections in FIG. 3 correspond to the peak numbers of the time-series waveform in FIG. 2, respectively.
  • FIG. 4 is a graph of a reflectance spectrum obtained by Fourier-transforming the time-series waveform of FIG. 2, in which the vertical axis represents the reflectance and the horizontal axis represents the frequency.
  • repetition of the magnitude of the reflectance that is, intense chikko fringe is observed.
  • Such a fringe affects the shape of the entire reflectance spectrum, complicating the analysis of the spectrum and complicating the accurate physical properties of the thin film such as an epitaxial film formed on the substrate. It is extremely difficult to determine the value.
  • the above problem is solved by stopping the measurement before the reflected light (see FIG. 3) from the back surface of the substrate returns when measuring the time-series waveform. That is, as shown in FIG. 1, the control mechanism 8 controls the drive mechanism 7 Then, the stroke range for displacing the movable mirror 6 in the direction of the arrow is changed from the long setting indicated by S1 to the short setting indicated by S2. As a result, the measurement is stopped before the reflected light from the back surface of the substrate returns. In this way, the reflectance spectrum can be measured without being affected by a thousand fringes due to multiple reflections inside the substrate, and accurate physical properties of the film on the substrate can be obtained from the analysis. .
  • the present invention is a measurement technique utilizing the features of terahertz time-domain spectroscopy, and such measurement could not be performed by conventional spectroscopy.
  • This measurement method is extremely effective when measuring the optical constant of a film on a substrate, because the influence of interference fringes can be eliminated.
  • Fig. 5 shows the time-series waveform of the electric field E (t) of the terahertz pulsed light obtained in this manner.
  • the semiconductor sample which is the sample, is the same as that obtained when the time-series waveform of FIG. 2 was obtained.
  • the sampling interval ⁇ t of the time-series waveform data was measured at 256 points at 0.06667 ps, which is 1 to 4 times the measurement time compared to the 1024 points measurement in FIG.
  • the peak appearing on the time-series waveform in FIG. 5 is only P1 reflected on the surface of the semiconductor substrate 5, and the peak P2 and below are removed.
  • the reflectance spectrum is measured without being affected by interference fringes due to multiple reflections inside the substrate, and from the analysis, the reflectance spectrum of the film on the substrate is determined. Accurate physical property values can be obtained.
  • FIG. 6 is a reflectance spectrum obtained by Fourier-transforming the time-series waveform of FIG. 5, and is a graph corresponding to FIG. Comparing the reflectance spectrum of Fig. 6 with that of Fig. 4, it is clear that the influence of interference fringes due to multiple reflection inside the substrate has been removed.
  • the advantages of the measurement method of the present invention are that (1) a spectrum that is not affected by the fringe is obtained, and (2) the measurement time can be reduced because the number of data points is reduced.
  • step 5 detection data is acquired until the stroke amount of the movable mirror 6 becomes S2, and in step 6, a time-series waveform is measured.
  • step 5 detection data is acquired until the stroke amount of the movable mirror 6 becomes S1
  • step 9 a time-series waveform is measured.
  • step 10 a time range for performing Fourier transform on the time-series waveform is set, and in step 7, only this time range is subjected to Fourier transform.
  • n-type GaAs films with four different carrier concentrations used for the measurement were formed by molecular beam epitaxy on a semi-insulating GaAs substrate (thickness: 625 ⁇ ). is there. The thickness of the film is 2. Kiyaria concentration of guaranteed value of n-type G a A s layer that is determined from the film formation conditions, respectively 3 X 1 0 1 5, 1 X 1 0 1 6, 4 X 1 0 1 6, 1 X 1 0 1 7 is a cm _ 3.
  • FIG. 7 is a reflectance spectrum that does not include the influence of interference fringes due to multiple reflection, and is obtained by the terahertz time-domain spectrometry of the present invention.
  • FIG. 8 is a reflectance spectrum calculated by a theory that does not consider the reflection from the back surface of the substrate. Looking at the reflectance spectra in Figs. 7 and 8, it can be seen that the measured and theoretical values agree very well.
  • FIG. 9 is a graph illustrating the reliability of the terahertz time domain measurement method of the present invention with respect to the carrier concentration that best reproduces the shape of the observed reflectance spectrum.
  • Figure 9 shows the results of plotting the relationship between the carrier concentration determined by the non-linear optimization method from the reflectance spectrum obtained by the spectroscopic measurement of the present invention and the carrier concentration determined from the epitaxial film formation conditions. Is shown. Both are roughly on the proportional straight line, and are in good agreement.
  • FIG. 10 shows the reflectance spectrum obtained by the terahertz time-domain spectrometry of the present invention. This is the result of plotting the carrier concentration and mobility determined from the torque on a graph showing the relationship between the carrier concentration and mobility determined from electrical measurements.
  • the point indicating the relationship between carrier concentration and mobility obtained from terahertz time-domain spectroscopy is the point indicating the relationship between carrier concentration and mobility determined from electrical measurements. (Indicated by a square mark in the figure). Therefore, it can be seen that the values obtained from terahertz time-domain spectroscopy almost match the values obtained from electrical measurements.
  • the method of measuring physical properties according to the present embodiment is based on HI-V compound semiconductors such as p-type GaAs, n-type AlGaAs, and p-type A1GaAs on a semiconductor substrate. — It is also applicable to thin films of Group VI compound semiconductors and IV—VI compound semiconductors.
  • the method for measuring the parameter of the electrical characteristics of the semiconductor thin film on the semiconductor substrate has been described.
  • the measurement of the reflectance spectrum of the ion-implanted layer formed on the semiconductor substrate is also described in this embodiment.
  • the invention is applicable.
  • the present invention is also applicable to reflectance spectrum measurement of thin films other than semiconductor thin films such as dielectrics and superconductors.
  • the embodiments of the present invention have been described above, but the present invention is not limited to these embodiments. Other modes that can be considered within the technical idea of the present invention are also included in the scope of the present invention.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
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  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L'invention concerne une lumière térahertz L3 appliquée de façon répétée sur un substrat à semi-conducteur (5) pour recevoir une lumière réfléchissante L4 du substrat (5). La lumière réfléchissante L4 comprend une lumière multiréflexion produite dans le substrat (5). Lorsque la lumière réfléchissante L4 est reçue, une durée de temps de retard requise pour acheminer une lumière pulsée d'une sonde L2 à un détecteur de lumière térahertz (4) est fixée de sorte qu'au niveau de ce dernier (4), la lumière réfléchissante L4 arrivant par des surfaces autres que la surface éclairée du substrat à semi-conducteur (5) ne soit pas détectée. Un procédé de spectrométrie de zone temporelle est mis en oeuvre pour mesurer la forme d'onde de série temporelle de l'intensité de champ de la lumière réfléchissante L4 détectée, et les paramètres de caractéristiques électriques du substrat (5) sont calculés à partir d'une réflectance spectrale déterminée sur la base de la forme d'onde de série temporelle.
PCT/JP2003/006887 2002-06-03 2003-05-30 Procede pour mesurer des caracteristiques electriques d'un substrat plat au moyen d'une lumiere terahertz WO2003102557A1 (fr)

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AU2003241695A AU2003241695A1 (en) 2002-06-03 2003-05-30 Method of measuring electric characteristics of flat substrate using terahertz light

Applications Claiming Priority (2)

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JP2002161085A JP2004003902A (ja) 2002-06-03 2002-06-03 テラヘルツ光を用いた平面基板の電気特性測定方法
JP2002-161085 2002-06-03

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Cited By (1)

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EP1662249A1 (fr) * 2003-08-22 2006-05-31 Japan Science and Technology Agency Systeme de compensation des differences sur le trajet optique pour l'acquisition d'un signal en serie chronologique emis par un spectrometre a impulsion de conversion en serie chronologique

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2031374B1 (fr) 2007-08-31 2012-10-10 Canon Kabushiki Kaisha Appareil et procédé pour obtenir des informations associées à des ondes térahertz
JP5371293B2 (ja) * 2007-08-31 2013-12-18 キヤノン株式会社 テラヘルツ波に関する情報を取得するための装置及び方法
JP5063325B2 (ja) 2007-12-14 2012-10-31 独立行政法人理化学研究所 キャリア濃度測定装置およびキャリア濃度測定方法
JP5717335B2 (ja) 2009-01-23 2015-05-13 キヤノン株式会社 分析装置
JP6524125B2 (ja) * 2017-02-13 2019-06-05 シャープ株式会社 スペクトル解析装置およびスペクトル解析方法
KR102506803B1 (ko) * 2018-11-23 2023-03-07 삼성전자주식회사 배선 기판 테스트 방법 및 이를 수행하기 위한 장치

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WO1999027374A1 (fr) * 1997-11-21 1999-06-03 Sela Semiconductor Engineering Laboratories Ltd. Telemesure de la resistivite
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WO1999027374A1 (fr) * 1997-11-21 1999-06-03 Sela Semiconductor Engineering Laboratories Ltd. Telemesure de la resistivite
US20010029436A1 (en) * 2000-03-27 2001-10-11 Tochigi Nikon Corporation, Nikon Corporation Semiconductor electrical characteristics evaluation apparatus and semiconductor electrical characteristics evaluation method

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DUVILLARET LIONEL ET AL.: "A reliable method for extraction of material parameters in terahertz time-domain spectroscopy", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 2, no. 3, September 1996 (1996-09-01), pages 739 - 746, XP002951810 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662249A1 (fr) * 2003-08-22 2006-05-31 Japan Science and Technology Agency Systeme de compensation des differences sur le trajet optique pour l'acquisition d'un signal en serie chronologique emis par un spectrometre a impulsion de conversion en serie chronologique
EP1662249A4 (fr) * 2003-08-22 2008-02-13 Japan Science & Tech Agency Systeme de compensation des differences sur le trajet optique pour l'acquisition d'un signal en serie chronologique emis par un spectrometre a impulsion de conversion en serie chronologique
US7507966B2 (en) 2003-08-22 2009-03-24 Japan Science And Technology Agency Optical-path-difference compensation mechanism for acquiring wave form signal of time-domain pulsed spectroscopy apparatus
US7705311B2 (en) 2003-08-22 2010-04-27 Japan Science And Technology Agency Optical-path-difference compensation mechanism for acquiring wave from signal of time-domain pulsed spectroscopy apparatus

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AU2003241695A8 (en) 2003-12-19
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122 Ep: pct application non-entry in european phase