WO2003098969A3 - Mikromechanischer kapazitiver wandler und verfahren zur herstellung desselben - Google Patents

Mikromechanischer kapazitiver wandler und verfahren zur herstellung desselben Download PDF

Info

Publication number
WO2003098969A3
WO2003098969A3 PCT/EP2003/005010 EP0305010W WO03098969A3 WO 2003098969 A3 WO2003098969 A3 WO 2003098969A3 EP 0305010 W EP0305010 W EP 0305010W WO 03098969 A3 WO03098969 A3 WO 03098969A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
same
capacitive transducer
electrically conductive
carrier layer
Prior art date
Application number
PCT/EP2003/005010
Other languages
English (en)
French (fr)
Other versions
WO2003098969A2 (de
Inventor
Stefan Barzen
Alfons Dehe
Marc Fueldner
Original Assignee
Infineon Technologies Ag
Stefan Barzen
Alfons Dehe
Marc Fueldner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Stefan Barzen, Alfons Dehe, Marc Fueldner filed Critical Infineon Technologies Ag
Publication of WO2003098969A2 publication Critical patent/WO2003098969A2/de
Publication of WO2003098969A3 publication Critical patent/WO2003098969A3/de
Priority to US10/991,350 priority Critical patent/US7253016B2/en
Priority to US11/584,948 priority patent/US7348646B2/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

Ein mikromechanischer kapazitiver Wandler sowie ein Verfahren zum Herstellen eines mikromechanischen Wandlers hat eine bewegliche Membran (10) und ein elektrisch leitfähiges Flächenelement (14) in einer Trägerschicht (15). Das elektrisch leitfähige Flächenelement (14) ist über einen Hohlraum (12) der Membran (15) gegenüberliegend angeordnet. Das elektrisch leitfähige Flächenelement (14) und die Trägerschicht (15) sind von Perforationsöffnungen (20) durchdrungen. Die Öffnungsweite der Perforationsöffnungen (20) entsprechen in etwa der Dicke der Trägerschicht (15).
PCT/EP2003/005010 2002-05-15 2003-05-13 Mikromechanischer kapazitiver wandler und verfahren zur herstellung desselben WO2003098969A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/991,350 US7253016B2 (en) 2002-05-15 2004-11-15 Micromechanical capacitive transducer and method for producing the same
US11/584,948 US7348646B2 (en) 2002-05-15 2006-10-23 Micromechanical capacitive transducer and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10221660.6 2002-05-15
DE2002121660 DE10221660B4 (de) 2002-05-15 2002-05-15 Verfahren zur Herstellung eines mikromechanischen, kapazitiven Wandlers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/991,350 Continuation US7253016B2 (en) 2002-05-15 2004-11-15 Micromechanical capacitive transducer and method for producing the same

Publications (2)

Publication Number Publication Date
WO2003098969A2 WO2003098969A2 (de) 2003-11-27
WO2003098969A3 true WO2003098969A3 (de) 2004-10-14

Family

ID=29285437

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/005010 WO2003098969A2 (de) 2002-05-15 2003-05-13 Mikromechanischer kapazitiver wandler und verfahren zur herstellung desselben

Country Status (2)

Country Link
DE (1) DE10221660B4 (de)
WO (1) WO2003098969A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006002106B4 (de) * 2006-01-17 2016-03-03 Robert Bosch Gmbh Mikromechanischer Sensor mit perforationsoptimierter Membran sowie ein geeignetes Hestellungsverfahren
DE102006011545B4 (de) * 2006-03-14 2016-03-17 Robert Bosch Gmbh Mikromechanisches Kombi-Bauelement und entsprechendes Herstellungsverfahren
DE102006012856B4 (de) * 2006-03-21 2016-11-24 Robert Bosch Gmbh Mikromechanische Struktur zum Empfang und/oder zur Erzeugung von akustischen Signalen und Verfahren zum Empfang und/oder zur Erzeugung von akustischen Signalen
DE102010035168A1 (de) 2010-08-23 2012-02-23 Günter Kowalski Sensor für Kondensatormikrofone
US8503699B2 (en) 2011-06-01 2013-08-06 Infineon Technologies Ag Plate, transducer and methods for making and operating a transducer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0561566A2 (de) * 1992-03-18 1993-09-22 Knowles Electronics, Inc. Festkörper-Kondensatormikrofon

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000009440A1 (de) * 1998-08-11 2000-02-24 Infineon Technologies Ag Mikromechanischer sensor und verfahren zu seiner herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0561566A2 (de) * 1992-03-18 1993-09-22 Knowles Electronics, Inc. Festkörper-Kondensatormikrofon

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KUEHNEL W ET AL: "A SILICON CONDENSER MICROPHONE WITH STRUCTURED BACK PLATE AND SILICON NITRIDE MEMBRANE", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. A30, no. 3, 1 February 1992 (1992-02-01), pages 251 - 258, XP000277436, ISSN: 0924-4247 *
KUHNEL W ET AL: "MICROMACHINED SUBMINIATURE CONDENSER MICROPHONES IN SILICON", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. A32, no. 1 / 3, 1 April 1992 (1992-04-01), pages 560 - 564, XP000287375, ISSN: 0924-4247 *

Also Published As

Publication number Publication date
DE10221660B4 (de) 2007-12-27
DE10221660A1 (de) 2003-11-27
WO2003098969A2 (de) 2003-11-27

Similar Documents

Publication Publication Date Title
TW200701817A (en) Method for producing polymeric capacitive ultrasonic transducer
WO2005114719A3 (en) Method of forming a recessed structure employing a reverse tone process
WO2003042721A3 (en) Trilayered beam mems device and related methods
WO2003095963A3 (en) Barometric pressure sensor
SG129444A1 (en) Sound detecting mechanism
WO2004095540A3 (en) Method of making a nanogap for variable capacitive elements and device having a nanogap
WO2004036952A3 (de) Membran und verfahren zu deren herstellung
WO2003031136A3 (en) Methods for patterning using liquid embossing
WO2002095799A3 (en) Thin films and production methods thereof
WO2003095358A3 (en) Method of forming manofluidic channels
TWI267153B (en) Circuit device and manufacturing method for the same, plate shaped body
TW200738027A (en) Capacitive micromachined ultrasound transducer and methods of making the same
WO2006004929A3 (en) Electrochemical deposition method utilizing microdroplets of solution
EP1266214A4 (de) Biegeplatten-wellensensor und array
EP1471637A3 (de) Freitragender Dünnschicht-Volumenwellen-Resonator (FBAR) und Methode zu seiner Herstellung
TW200603418A (en) A film bulk acoustic resonator package and method of fabricating same
WO2005064641A3 (en) Semiconductor device and method of fabricating the same
WO2004109770A3 (en) Through wafer via process and amplifier with through wafer via
AU2002364117A1 (en) Film structures and methods of making film structures
EP1274149A3 (de) Herstellungsverfahren für Hochfrequenzschaltung und Hochfrequenzschaltung
WO2000013129A3 (de) Verfahren zur herstellung metallischer feinstrukturen und anwendung des verfahrens bei der herstellung von sensoranordnungen zur erfassung von fingerabdrücken
ATE514652T1 (de) Oberflächig mikrohergestellter absolutdrucksensor und dessen herstellungsverfahren
AU2002304303A1 (en) Surface micromachined process for manufacturing electroacoustic transducers
WO2003084861A3 (en) Method of manufacturing an electronic device in a cavity with a cover
WO2003098969A3 (de) Mikromechanischer kapazitiver wandler und verfahren zur herstellung desselben

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP KR US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 10991350

Country of ref document: US

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP