WO2003098707A1 - Réseau de del - Google Patents

Réseau de del Download PDF

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Publication number
WO2003098707A1
WO2003098707A1 PCT/IE2003/000082 IE0300082W WO03098707A1 WO 2003098707 A1 WO2003098707 A1 WO 2003098707A1 IE 0300082 W IE0300082 W IE 0300082W WO 03098707 A1 WO03098707 A1 WO 03098707A1
Authority
WO
WIPO (PCT)
Prior art keywords
illuminator
diodes
substrate
pads
layer
Prior art date
Application number
PCT/IE2003/000082
Other languages
English (en)
Inventor
Jules Braddell
Kieran Kavanagh
Original Assignee
Applied Optotech Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Optotech Limited filed Critical Applied Optotech Limited
Priority to AU2003268980A priority Critical patent/AU2003268980A1/en
Priority to EP03752883A priority patent/EP1512182A1/fr
Publication of WO2003098707A1 publication Critical patent/WO2003098707A1/fr
Priority to US10/991,499 priority patent/US7659547B2/en
Priority to US12/631,747 priority patent/US8093614B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Definitions

  • the invention relates to illuminators for applications such as machine vision.
  • an illuminator comprising a substrate, semiconductor diodes placed on the substrate, an electrical drive for the diodes, a layer of encapsulant over the diodes and the substrate, and a diffuser.
  • the combination of an encapsulant and a diffuser helps to achieve excellent robustness and optical efficiency, in turn leading to compactness.
  • the substrate is the diffuser, the substrate being of a reflect 1 material having a diffusing rough upper surface between the diodes.
  • the substrate comprises a metal providing the diffusing rough surface.
  • the metal is Ag.
  • the Ag is a layer over layers of Ni and Ti.
  • the substrate comprises a Si layer having a rough upper surface, an Si0 2 oxide on the Si layer upper surface and having a rough upper surface, and at least one metal layer over the Si0 2 oxide layer and having a rough upper surface.
  • the substrate comprises conductive pads on which the diodes are placed.
  • the ratio of the footprint of the diodes to that of the pads is equal to or less than approximately 1 : 50.
  • the pads are of rectangular shape in plan.
  • alternate lines of diodes are located at opposed ends of their pads.
  • the diffuser comprises a top diffuser mounted on the encapsulant.
  • the encapsulant and the top diffuser are index matched.
  • the top diffuser comprises an opal glass diffuser plate.
  • the invention provides a method of producing an illuminator comprising the steps of:
  • the base layer comprises silicon
  • the base layer further comprises silicon dioxide.
  • the silicon is a wafer having a rough upper surface, and the silicon dioxide is grown on said rough upper surface.
  • the top layer comprises Ag.
  • the method comprises the further step of etching the top layer to define pads.
  • the pads have a size such that the ratio of footprint of the diodes to that of the pads is equal to or less than approximately 1 : 50.
  • Fig. 1 is a diagrammatic cross-sectional side view of an illuminator of the invention
  • Fig. 2 is a diagrammatic plan view showing electrical connection of the diodes
  • Fig. 3 is a more detailed plan view showing the arrangement of the diodes on the substrate
  • Fig. 4 is an enlarged diagrammatic cut-away cross-sectional side view showing construction of the illuminator in more detail.
  • Figs. 5(a) and 5(b) are diagrams illustrating operation of the illuminator.
  • an illuminator 1 comprises electrical conductors 2 and 3 extending through an Al casing side wall 4 and over an Al casing base 5.
  • the conductors 2 and 3 are connected to a substrate 6 on the casing base 5.
  • Light emitting diodes 7 in the form of bare semiconductor die are mounted on the substrate 6.
  • An opal glass diffuser plate 8 is mounted between the casing side walls 4 and over the diodes 7.
  • the spacing between the diffuser 8 and the substrate 6 and the diodes 7 is filled with an epoxy encapsulant 9, the epoxy 9 being index matched to the diffuser 8.
  • the diodes 7 are shown diagrammatically to illustrate the electrical interconnection with wire bonds 10.
  • the substrate 6 comprises metal pads 11 of rectangular shape, on each of which there is a diode 7.
  • Each diode 7 is connected by a wire bond 10 to the next pad 11 in succession in columns between rails 15 and 16.
  • the series interconnection of a column is also illustrated with an electrical schematic in Fig. 2.
  • Fig. 3 the physical arrangement of the diodes 7 is shown.
  • Each pad 11 is of size 4mm x 3mm and each diode 7 is 0.5mm x 0.5mm.
  • the diodes 7 may be smaller, for example 0.25mm x 0.25mm.
  • the ratio of footprint size of each diode 7 to the pad 11 is c. 1 : 50 or less. This is in contrast to current teaching in this art towards ever higher density of diodes within the confines imposed by heat dissipation requirements.
  • the diodes 7 are not centrally mounted on the pads 11. Instead they are on opposed ends of the pads 11 in alternate columns to achieve a more uniform distribution and a large wire bond connection area. EA better uniformity may be activated if they are arranged in a hexagonal pattern.
  • SiO 2 oxide layer 12 of c.3 ⁇ m thickness on the Si surface, and having a rough upper surface because of roughness of the underlying Si surface;
  • a top layer of Ti/Ni/Ag is etched following a photolithographic process to form the pattern of the pads 11 over the Si0 2 oxide 12.
  • the etching pattern is that illustrated in Fig. 3.
  • the diodes 7 are placed on the pads 11 as shown in Fig. 3 and are encapsulated with the epoxy 9 to a depth of 1.5mm.
  • the opal glass diffuser plate 8 is then placed on top and is retained by the casing side walls 4.
  • the plate 8 comprises a glass portion 8(a) on top of which there is a flash diffusion coating 8(b).
  • the plate 8 and the epoxy 9 are carefully chosen to ensure that their refractive indexes match, in this embodiment being of a value approximately 1.47.
  • the thickness of the plate 8 is 3.5mm.
  • the surface roughness of the Si 13 is carried through the Si0 2 12 and the pads 11 so that the top surfaces of the pads 11 are rough and, being of/ are also reflective.
  • the pads 11 act as a lower diffuser to improve optical efficiency.
  • Fig. 5(a) which illustrates operation of the illuminator before application of the diffuser plate 8.
  • Lateral light from a diode 7 is reflected as a "beam” A at a small angle so that there is no reflection at the epoxy/air interface and it exits.
  • a "beam” B from another diode 7.
  • a large proportion of the "beams" are reflected from one of the pads 11 at a small enough angle to exit from the epoxy 9.
  • an illuminator as shown in Fig. 5(a) without an upper diffuser provides better optical efficiency than one having flat pad surfaces, particularly if the prior approach of a much greater diode/pad footprint ratio is used.
  • the present invention therefore includes the embodiment of Fig. 5(a).
  • the illuminator of the invention could find application in a variety of fields because of its robust optical efficiency and brightness characteristics. For example, it may be used in a hazardous environment, possibly submerged in a liquid.
  • the casing material may alternatively be ceramic or plastics.
  • the choice of casing material depends to a large extent on the intended duty cycle, ceramic or metal for high duty cycle and plastics for low duty cycle.
  • the top diffuser plate may be of the type having a roughened surface instead of a flash opal diffusion coating.
  • different materials systems may be used for the substrate. While silicon is a good thermal conductor, if the duty cycle is low a material having a lower thermal conductivity may be used.
  • the illuminator has a top diffuser. It is also envisaged that the illuminator may not have a lower diffuser on the substrate surface, only a top diffuser. In the latter embodiment, the features of use of encapsulant on the diodes index matched to a top diffuser achieves significant advantages over the prior art.
  • the overall configuration of the illuminator may be different, such as linear or annular.
  • the shape of the pads may be other than rectangular, such as circular or hexagonal.
  • the electrical connectivity between diodes may be different.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

L'invention concerne une source lumineuse (1) comportant des diodes électroluminescentes (7) à puces nues semi-conductrices se situant sur des plages (11) faites d'une matière à base d'Ag/Ni/Ti. Une plaquette de Si (13) présente une surface supérieure rugueuse ; cette rugosité est transmise par une couche d'oxyde (12) et les plages (11) de manière à produire une surface supérieure de plages (11) rugueuse mais réfléchissante, et de former ainsi un diffuseur. Une couche de matière d'encapsulation (9) époxyde est déposée sur les diodes (7) et les plages (11), l'indice de cette couche correspondant à celui d'une plaque de diffusion (8) supérieure en verre opalin.
PCT/IE2003/000082 2002-05-22 2003-05-22 Réseau de del WO2003098707A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003268980A AU2003268980A1 (en) 2002-05-22 2003-05-22 Led array
EP03752883A EP1512182A1 (fr) 2002-05-22 2003-05-22 Reseau de del
US10/991,499 US7659547B2 (en) 2002-05-22 2004-11-19 LED array
US12/631,747 US8093614B2 (en) 2002-05-22 2009-12-04 LED array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IE2002/0398 2002-05-22
IE20020398 2002-05-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/991,499 Continuation US7659547B2 (en) 2002-05-22 2004-11-19 LED array

Publications (1)

Publication Number Publication Date
WO2003098707A1 true WO2003098707A1 (fr) 2003-11-27

Family

ID=29434310

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IE2003/000082 WO2003098707A1 (fr) 2002-05-22 2003-05-22 Réseau de del

Country Status (4)

Country Link
EP (1) EP1512182A1 (fr)
AU (1) AU2003268980A1 (fr)
IE (1) IES20030388A2 (fr)
WO (1) WO2003098707A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1864338A1 (fr) * 2005-02-04 2007-12-12 Seoul Opto Device Co., Ltd. Emetteur de lumiere pourvu d'une pluralite de cellules et son procede de fabrication
WO2010083929A1 (fr) * 2009-01-23 2010-07-29 Osram Opto Semiconductors Gmbh Composant semi-conducteur optoélectronique
EP2733744A1 (fr) * 2004-06-30 2014-05-21 Seoul Viosys Co., Ltd Élément d'émission lumineuse comprenant plusieurs DELs verticales couplées en serie sur le même substrat porteur

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935492A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 原稿照明装置
EP0560605A1 (fr) * 1992-03-11 1993-09-15 Sharp Kabushiki Kaisha Source de lumière
US5479029A (en) * 1991-10-26 1995-12-26 Rohm Co., Ltd. Sub-mount type device for emitting light
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6258618B1 (en) * 1998-09-11 2001-07-10 Lumileds Lighting, Us, Llc Light emitting device having a finely-patterned reflective contact
WO2002086972A1 (fr) * 2001-04-23 2002-10-31 Plasma Ireland Limited Illuminateur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935492A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 原稿照明装置
US5479029A (en) * 1991-10-26 1995-12-26 Rohm Co., Ltd. Sub-mount type device for emitting light
EP0560605A1 (fr) * 1992-03-11 1993-09-15 Sharp Kabushiki Kaisha Source de lumière
US6258618B1 (en) * 1998-09-11 2001-07-10 Lumileds Lighting, Us, Llc Light emitting device having a finely-patterned reflective contact
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
WO2002086972A1 (fr) * 2001-04-23 2002-10-31 Plasma Ireland Limited Illuminateur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 008, no. 123 (E - 249) 8 June 1984 (1984-06-08) *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2733744A1 (fr) * 2004-06-30 2014-05-21 Seoul Viosys Co., Ltd Élément d'émission lumineuse comprenant plusieurs DELs verticales couplées en serie sur le même substrat porteur
EP1864338A1 (fr) * 2005-02-04 2007-12-12 Seoul Opto Device Co., Ltd. Emetteur de lumiere pourvu d'une pluralite de cellules et son procede de fabrication
EP1864338A4 (fr) * 2005-02-04 2010-01-20 Seoul Opto Device Co Ltd Emetteur de lumiere pourvu d'une pluralite de cellules et son procede de fabrication
WO2010083929A1 (fr) * 2009-01-23 2010-07-29 Osram Opto Semiconductors Gmbh Composant semi-conducteur optoélectronique
US8916886B2 (en) 2009-01-23 2014-12-23 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component

Also Published As

Publication number Publication date
IES20030388A2 (en) 2003-10-01
AU2003268980A1 (en) 2003-12-02
IE20030389A1 (en) 2003-11-26
EP1512182A1 (fr) 2005-03-09

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