IE20030389A1 - An illuminator - Google Patents
An illuminatorInfo
- Publication number
- IE20030389A1 IE20030389A1 IE20030389A IE20030389A IE20030389A1 IE 20030389 A1 IE20030389 A1 IE 20030389A1 IE 20030389 A IE20030389 A IE 20030389A IE 20030389 A IE20030389 A IE 20030389A IE 20030389 A1 IE20030389 A1 IE 20030389A1
- Authority
- IE
- Ireland
- Prior art keywords
- illuminator
- substrate
- diodes
- pads
- layer
- Prior art date
Links
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000011022 opal Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002428 photodynamic therapy Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
An illuminator (1) has bare semiconductor die light emitting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.
Description
INTRODUCTION
Field of the Invention
The invention relates to illuminators for applications such as machine vision.
Prior Art Discussion
In general there is a requirement in many applications such as machine vision, photodynamic therapy and general illumination for an LED based illuminator in either continuous or strobe operation with some or all of the following properties:
(a) A required level of uniformity.
(h) A required illuminance in Lux or mW/cm2 (c) A required luminance in cd/m2 or W/m2sr (d) A required luminous flux or total radiated flux in Lumens or mW (e) Compact size to fit within constraints.
(f) To be of sufficient optical - electrical conversion efficiency to reduce the power consumption of the illuminator and reduce the thermal load on individual light sources.
(g) To minimise the thermal resistance from the light source to the outside environment hence reducing the operating junction temp of the light sources leading to an improved operating performance and reliability.
It is known to provide an array of “bare” semiconductor die mounted on a substrate to address these requirements, as described in US5936353. However, it appears that efnciency of light transmission at the required target area from the diodes could he improved.
OPEN TO PUBLIC INSPECTION UNDER SECTION 28 AND RULE 23
-2SUMMARY OF THE INVENTION
According to the invention, there is provided an illuminator comprising a substrate, semiconductor diodes placed on the substrate, an electrical drive for the diodes, a layer of encapsulant over the diodes and the substrate, and a diffuser.
The combination of an encapsulant and a diffuser helps to achieve excellent robustness and optical efficiency, in turn leading to compactness.
In one embodiment, the substrate is the diffuser, the substrate being of a reflective material having a diffusing rough upper surface between the diodes.
In another embodiment, the substrate comprises a metal providing the diffusing rough surface.
In a further embodiment, the metal is Ag.
In one embodiment, the Ag is a layer over layers of Ni and Ti.
In another embodiment, the substrate comprises a Si layer having a rough upper surface, an SiO2 oxide on the Si layer upper surface and having a rough upper surface, and at least one metal layer over the SiO2 oxide layer and having a rough upper surface.
In a further embodiment, the substrate comprises conductive pads on which the diodes are placed.
In one embodiment, the ratio of the footprint to or less than approximately 1 ; 50.
+-T* Ζ-» x4 ·« ζ-ν. χ-ί 4-z*\ <1 + AT 4Τ» Z3 •t'XO /4 Ο 1C Ζλ'ΜιπΙ ui die uiuucd iu ljlIcli ua mu puuo io vQUal
-3In another embodiment, the pads are of rectangular shape in plan.
In a further embodiment, there is a two-dimensional array of pads, and the diodes are connected in series along lines of the array between end rails.
In one embodiment, alternate lines of diodes are located at opposed ends of their pads.
In another embodiment, the diffuser comprises a top diffuser mounted on the encapsulant.
In a further embodiment, the encapsulant and the top diffuser are index matched.
In one embodiment, the top diffuser comprises an opal glass diffuser plate.
In another aspect, the invention provides a method of producing an illuminator comprising the steps of:
providing a base layer of substrate material having a rough upper surface;
applying a top layer of substrate reflective material over the base layer so that surface roughness of the base layer upper surface is carried through to the top layer upper surface;
placing light emitting diodes in the form of bare semiconductor die on the substrate; and applying encapsulant over the diodes and the substrate.
ΙΕπ j 0 3 8
-4This is a very simple and effective way of simultaneously providing both a suitable substrate and also a diffuser for an illuminator.
In one embodiment, the base layer comprises silicon.
In another embodiment, the base layer further comprises silicon dioxide.
In a further embodiment, the silicon is a wafer having a rough upper surface, and the silicon dioxide is grown on said rough upper surface.
In one embodiment, the top layer comprises Ag.
In another embodiment, the method comprises the further step of etching the top layer to define pads.
In a further embodiment, the pads have a size such that the ratio of footprint of the diodes to that of the pads is equal to or less than approximately 1:50.
DETAILED DESCRIPTION OF THE INVENTION
Brief Description of the Drawings
The invention will be more clearly understood from the following description of some embodiments thereof, given by way of example only with reference to the accompanying drawings in which :Fig. 1 is a diagrammatic cross-sectional side view of an illuminator of the invention;
-5Fig. 2 is a diagrammatic plan view showing electrical connection of the diodes;
Fig. 3 is a more detailed plan view showing the arrangement of the diodes on the substrate;
Fig. 4 is an enlarged diagrammatic cut-away cross-sectional side view showing construction of the illuminator in more detail; and
Figs. 5(a) and 5(b) are diagrams illustrating operation of the illuminator.
Description of the Embodiments
Referring to Fig. 1 an illuminator 1 comprises electrical conductors 2 and 3 extending through an Al casing side wall 4 and over an Al casing base 5. The conductors 2 and 3 are connected to a substrate 6 on the casing base 5. Light emitting diodes 7 in the form of bare semiconductor die are mounted on the substrate 6. An opal glass diffuser plate 8 is mounted between the casing side walls 4 and over the diodes 7. The spacing between the diffuser 8 and the substrate 6 and the diodes 7 is filled with an epoxy encapsulant 9, the epoxy 9 being index matched to the diffuser 8.
Referring to Fig. 2 the diodes 7 are shown diagrammatically to illustrate the electrical interconnection with wire bonds 10. The substrate 6 comprises metal pads 11 of rectangular shape, on each of which there is a diode 7. Each diode 7 is connected by a wire bond 10 to the next pad 11 in succession in columns between rails 15 and 16. The series interconnection of a column is also illustrated with an electrical schematic in Fig. 2.
-6Referring to Fig. 3 the physical arrangement of the diodes 7 is shown. Each pad 11 is of size 4mm x 3mm and each diode 7 is 0.5mm x 0.5mm. In other embodiments the diodes 7 may be smaller, for example 0.25mm x 0.25mm. Thus, the ratio of footprint size of each diode 7 to the pad 11 is c. 1 : 50 or less. This is in contrast to current teaching in this art towards ever higher density of diodes within the confines imposed by heat dissipation requirements.
It also be appreciated from Fig. 3 that the diodes 7 are not centrally mounted on the pads 11. Instead they are on opposed ends of the pads 11 in alternate columns to achieve a more uniform distribution and a large wire bond connection area. Even better uniformity may be activated if they are arranged in a hexagonal pattern.
Referring to Fig. 4 the structure of the illuminator 1 is shown in more detail. The substrate 6, residing on the Al casing base 5 (2mm thick), comprises in sequence upwardly :a silicon wafer 13 of 0.55mm thickness, with its rough surface facing upwardly;
an SiO2 oxide layer 12 of c.3pm thickness on the Si surface, and having a rough upper surface because of roughness of the underlying Si surface;
the metal pads 11 of c.3pm thickness and each comprising, in sequence upwardly, Ti, Ni, and Ag.
In the manufacturing process a top layer of Ti/Ni/Ag is etched following a photolithographic process to form the pattern of the pads 11 over the SiO2 oxide 12. The etching pattern is that illustrated in Fig. 3.
-7The diodes 7 are placed on the pads 11 as shown in Fig. 3 and are encapsulated with the epoxy 9 to a depth of 1.5mm. The opal glass diffuser plate 8 is then placed on top and is retained by the casing side walls 4. The plate 8 comprises a glass portion 8(a) on top of which there is a flash diffusion coating 8(b). The plate 8 and the epoxy 9 are carefully chosen to ensure that their refractive indexes match, in this embodiment being of a value approximately 1.47. The thickness of the plate 8 is 3.5mm.
As illustrated in Fig. 4 the surface roughness of the Si 13 is carried through the SiO2 12 and the pads 11 so that the top surfaces of the pads 11 are rough and, being of Ag, are also reflective.
Thus, the pads 11 act as a lower diffuser to improve optical efficiency. This is shown diagrammatically in Fig. 5(a) which illustrates operation of the illuminator before application of the diffuser plate 8. Lateral light from a diode 7 is reflected as a “beam” A at a small angle so that there is no reflection at the epoxy/air interface and it exits. Likewise for a “beam” B from another diode 7. For “beams” C and D there is internal reflection over the cross-sectional area illustrated. However because of the rough but reflective surfaces of the pads 11a large proportion of the “beams” are reflected from one of the pads 11 at a small enough angle to exit from the epoxy 9.
Therefore, it has been found that an illuminator as shown in Fig. 5(a) without an upper diffuser provides better optical efficiency than one having flat pad surfaces, particularly if the prior approach of a much greater diode/pad footprint ratio is used. The present invention therefore includes the embodiment of Fig. 5(a).
When the diffuser plate 8 is placed on top there is even greater optical efficiency. For example, the “beam” C which was reflected from the epoxy/air interface of Fig. 5(a) now continues through the plate 8 (index matched to 9) and exits because of the flash diffusion coating 8(b) of the plate 8.
-8The following are some experimental results.
Bare Die on Substrate Epoxy Covering Die Opal Glass over epoxy & index matched Luminous Flux (Lumens) 4.45 5.5 6.42 % increase in efficiency 21.4% 16.7%
The illuminator of the invention could find application in a variety of fields because of its robust optical efficiency and brightness characteristics. For example, it may be used in a hazardous environment, possibly submerged in a liquid.
The invention is not limited to the embodiments described but may be varied in construction and detail. For example, the casing material may alternatively be ceramic or plastics. The choice of casing material depends to a large extent on the intended duty cycle, ceramic or metal for high duty cycle and plastics for low duty cycle. The top diffuser plate may be of the type having a roughened surface instead of a flash opal diffusion coating. Also different materials systems may be used for the substrate. While silicon is a good thermal conductor, if the duty cycle is low a material having a lower thermal conductivity may be used. Also, as described above it is not essential that the illuminator has a top diffuser. It is also envisaged that the illuminator may not have a lower diffuser on the substrate surface, only a top diffuser. In the latter embodiment, the features of use of encapsulant on the diodes index matched to a top diffuser achieves significant advantages over the prior art.
Also, the overall configuration of the illuminator may be different, such as linear or annular. The shape of the pads may be other than rectangular, such as circular or
hexagonal. Also, there may be more than one diode on each pad. Also, the electrical connectivity between diodes may be different.
Claims (23)
1. An illuminator comprising a substrate, semiconductor diodes placed on the substrate, an electrical drive for the diodes, a layer of encapsulant over the diodes and the substrate, and a diffuser.
2. An illuminator as claimed in claim 1, wherein the substrate is the diffuser, the substrate being of a reflective material having a diffusing rough upper surface between the diodes.
3. An illuminator as claimed in claim 2, wherein the substrate comprises a metal providing the diffusing rough surface.
4. An illuminator as claimed in claim 3, wherein the metal is Ag.
5. An illuminator as claimed in claim 4, wherein the Ag is a layer over layers of Ni and Ti.
6. An illuminator as claimed in any of claims 2 to 5, wherein the substrate comprises a Si layer having a rough upper surface, an SiO 2 oxide on the Si layer upper surface and having a rough upper surface, and at least one metal layer over the SiO 2 oxide layer and having a rough upper surface.
7. An illuminator as claimed in any preceding claim, wherein the substrate comprises conductive pads on which the diodes are placed.
8. An illuminator as claimed in claim 7, wherein the ratio of the footprint of the dipdes to that of the pads is equal to or less than approximately 1 : 50. -11
9. An illuminator as claimed in claim 7 to 8, wherein the pads are of rectangular shape in plan.
10. An illuminator as claimed in claim 9, wherein there is a two-dimensional array of pads, and the diodes are connected in series along lines of the array between end rails.
11. An illuminator as claimed in claim 10, wherein alternate lines of diodes are located at opposed ends of their pads.
12. An illuminator as claimed in any preceding claim, wherein the diffuser comprises a top diffuser mounted on the encapsulant.
13. An illuminator as claimed in claim 12, wherein the encapsulant and the top diffuser are index matched.
14. An illuminator as claimed in claims 12 or 13, wherein the top diffuser comprises an opal glass diffuser plate.
15. A method of producing an illuminator comprising the steps of: providing a base layer of substrate material having a rough upper surface; applying a top layer of substrate reflective material over the base layer so that surface roughness of the base layer upper surface is carried through to the top layer upper surface; placing light emitting diodes in the form of bare semiconductor die on the substrate; and -12applying encapsulant over the diodes and the substrate.
16. A method as claimed in claim 15, wherein the base layer comprises silicon. 5
17. A method as claimed in claim 16, wherein the base layer further comprises silicon dioxide.
18. A method as claimed in claim 17, wherein the silicon is a wafer having a rough upper surface, and the silicon dioxide is grown on said rough upper 10 surface.
19. A method as claimed in any of claims 15 to 18, wherein the top layer comprises Ag. 15 20. A method as claimed in any of claims 15 to 19, comprising the further step of etching the top layer to define pads. 21. A method as claimed in claim 20, wherein the pads have a size such that the ratio of footprint of the diodes to that of the pads is equal to or less than
20. Approximately 1 : 50.
21. 22. An illuminator substantially as described with reference to the drawings.
22. 23. A method of producing an illuminator substantially as described with
23. 25 reference to the drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IE2003/0389A IE83472B1 (en) | 2003-05-22 | An illuminator |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IEIRELAND22/05/20022002/0398 | |||
| IE20020398 | 2002-05-22 | ||
| IE2003/0389A IE83472B1 (en) | 2003-05-22 | An illuminator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE20030389A1 true IE20030389A1 (en) | 2003-11-26 |
| IE83472B1 IE83472B1 (en) | 2004-06-16 |
Family
ID=
Also Published As
| Publication number | Publication date |
|---|---|
| IES20030388A2 (en) | 2003-10-01 |
| EP1512182A1 (en) | 2005-03-09 |
| WO2003098707A1 (en) | 2003-11-27 |
| AU2003268980A1 (en) | 2003-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Patent lapsed |