WO2003096437A3 - Silicon and silicon-germanium light-emitting device, methods and systems - Google Patents

Silicon and silicon-germanium light-emitting device, methods and systems Download PDF

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Publication number
WO2003096437A3
WO2003096437A3 PCT/US2003/012928 US0312928W WO03096437A3 WO 2003096437 A3 WO2003096437 A3 WO 2003096437A3 US 0312928 W US0312928 W US 0312928W WO 03096437 A3 WO03096437 A3 WO 03096437A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitting device
light
silicon
systems
methods
Prior art date
Application number
PCT/US2003/012928
Other languages
French (fr)
Other versions
WO2003096437A2 (en
Inventor
Donald Gardner
Tanay Karnik
Jianping Xu
Shekhar Borkar
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to AU2003228704A priority Critical patent/AU2003228704A1/en
Publication of WO2003096437A2 publication Critical patent/WO2003096437A2/en
Publication of WO2003096437A3 publication Critical patent/WO2003096437A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

A light-emitting device and optical communication system based on the light-emitting device is disclosed. The light-emitting device is formed in a float-zone substrate. The light-emitting device includes on the substrate lower surface a reflective layer and on the upper surface spaced apart doped regions. The portion of the upper surface between the doped regions is textured and optionally covered with an antireflection coating to enhance light emission. The light-emitting device can operate as a laser or as a light-emitting diode, depending on the reflectives of the antireflection coating and the reflective layer.
PCT/US2003/012928 2002-05-06 2003-04-24 Silicon and silicon-germanium light-emitting device, methods and systems WO2003096437A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003228704A AU2003228704A1 (en) 2002-05-06 2003-04-24 Silicon and silicon-germanium light-emitting device, methods and systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/140,255 2002-05-06
US10/140,255 US6924510B2 (en) 2002-05-06 2002-05-06 Silicon and silicon/germanium light-emitting device, methods and systems

Publications (2)

Publication Number Publication Date
WO2003096437A2 WO2003096437A2 (en) 2003-11-20
WO2003096437A3 true WO2003096437A3 (en) 2004-02-05

Family

ID=29269648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/012928 WO2003096437A2 (en) 2002-05-06 2003-04-24 Silicon and silicon-germanium light-emitting device, methods and systems

Country Status (4)

Country Link
US (2) US6924510B2 (en)
AU (1) AU2003228704A1 (en)
TW (1) TWI280671B (en)
WO (1) WO2003096437A2 (en)

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AUPR534201A0 (en) * 2001-05-30 2001-06-21 Unisearch Limited High efficiency silicon light emitting device
US6924510B2 (en) * 2002-05-06 2005-08-02 Intel Corporation Silicon and silicon/germanium light-emitting device, methods and systems
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7693424B1 (en) * 2004-04-02 2010-04-06 Sun Microsystems, Inc. Integrated proximity-to-optical transceiver chip
US7208768B2 (en) * 2004-04-30 2007-04-24 Sharp Laboratories Of America, Inc. Electroluminescent device
DE102004042997B4 (en) * 2004-05-14 2006-04-06 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Light emitting semiconductor diode, comprises primary and secondary silicon containing layers of one conductivity, and a third of the opposite conductivity
KR100736623B1 (en) * 2006-05-08 2007-07-09 엘지전자 주식회사 Led having vertical structure and method for making the same
US20080024786A1 (en) * 2006-07-31 2008-01-31 Honeywell International, Inc. Fiber optic gyroscope having a silicon-based optical chip
US20080115608A1 (en) * 2006-11-21 2008-05-22 Honeywell International Inc. High speed/high power re-settable mechanical disconnect
DE102007016932A1 (en) * 2007-04-05 2008-12-11 Technomedica Ag Solid state radiation source, its manufacture and use
US7769259B1 (en) * 2008-11-05 2010-08-03 Kotura, Inc. Optical coupler at interface between light sensor and waveguide
US8053790B2 (en) * 2009-02-19 2011-11-08 Kotusa, Inc. Optical device having light sensor employing horizontal electrical field
US8093080B2 (en) * 2009-02-19 2012-01-10 Kotusa, Inc. Optical device having light sensor employing horizontal electrical field
US9065253B2 (en) 2009-05-13 2015-06-23 University Of Washington Through Its Center For Commercialization Strain modulated nanostructures for optoelectronic devices and associated systems and methods
US8242432B2 (en) * 2009-10-23 2012-08-14 Kotura, Inc. System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons
TWI446036B (en) 2010-05-24 2014-07-21 Univ Nat Central Optical transmission module
US8410566B2 (en) 2011-07-21 2013-04-02 Kotura, Inc. Application of electrical field power to light-transmitting medium
CN103998961A (en) * 2011-09-29 2014-08-20 英特尔公司 Vertical optical coupler for planar photonic circuits
JP5998652B2 (en) * 2012-05-31 2016-09-28 富士通株式会社 Optical semiconductor device
ITTO20120583A1 (en) 2012-07-02 2014-01-03 St Microelectronics Srl INTEGRATED OPTOELECTRONIC DEVICE WITH WAVE GUIDE AND ITS MANUFACTURING PROCEDURE
US9256027B2 (en) 2012-07-02 2016-02-09 Stmicroelectronics S.R.L. Integrated optoelectronic device and system with waveguide and manufacturing process thereof
EP2980619A4 (en) * 2013-03-29 2016-12-07 Photonics Electronics Technology Res Ass Photoelectric hybrid device and method for manufacturing same
US9377581B2 (en) 2013-05-08 2016-06-28 Mellanox Technologies Silicon Photonics Inc. Enhancing the performance of light sensors that receive light signals from an integrated waveguide
JP6664897B2 (en) * 2015-07-22 2020-03-13 ルネサスエレクトロニクス株式会社 Semiconductor device
US10256362B2 (en) 2016-07-29 2019-04-09 Arizona Board Of Regents On Behalf Of Arizona State University Flexible silicon infrared emitter
WO2023179929A1 (en) * 2022-03-25 2023-09-28 Ams-Osram International Gmbh Light-emitting component

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JPS5975656A (en) * 1982-10-25 1984-04-28 Agency Of Ind Science & Technol Semiconductor integrated circuit structure
EP0378112A2 (en) * 1989-01-09 1990-07-18 Siemens Aktiengesellschaft Arrangemet for optical coupling between an optical waveguide and a photodiode on a substrate of silicon
US5159700A (en) * 1984-01-16 1992-10-27 Texas Instruments Incorporated Substrate with optical communication systems between chips mounted thereon and monolithic integration of optical I/O on silicon substrates
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US5280189A (en) * 1990-04-09 1994-01-18 Siemens Aktiengesellschaft Semiconductor element with a silicon layer
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US5159700A (en) * 1984-01-16 1992-10-27 Texas Instruments Incorporated Substrate with optical communication systems between chips mounted thereon and monolithic integration of optical I/O on silicon substrates
EP0378112A2 (en) * 1989-01-09 1990-07-18 Siemens Aktiengesellschaft Arrangemet for optical coupling between an optical waveguide and a photodiode on a substrate of silicon
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US5994720A (en) * 1996-03-04 1999-11-30 University Of Pretoria Indirect bandgap semiconductor optoelectronic device
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Also Published As

Publication number Publication date
US6924510B2 (en) 2005-08-02
AU2003228704A8 (en) 2003-11-11
TW200400652A (en) 2004-01-01
US20030205710A1 (en) 2003-11-06
WO2003096437A2 (en) 2003-11-20
US20050269586A1 (en) 2005-12-08
TWI280671B (en) 2007-05-01
AU2003228704A1 (en) 2003-11-11
US7169631B2 (en) 2007-01-30

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