WO2003093886A3 - Method of etching optic elements - Google Patents

Method of etching optic elements Download PDF

Info

Publication number
WO2003093886A3
WO2003093886A3 PCT/GB2003/001870 GB0301870W WO03093886A3 WO 2003093886 A3 WO2003093886 A3 WO 2003093886A3 GB 0301870 W GB0301870 W GB 0301870W WO 03093886 A3 WO03093886 A3 WO 03093886A3
Authority
WO
WIPO (PCT)
Prior art keywords
mask
etching
optical layer
layer
hole
Prior art date
Application number
PCT/GB2003/001870
Other languages
French (fr)
Other versions
WO2003093886A2 (en
Inventor
Sureshchandra M Ojha
Original Assignee
Bookham Technology Plc
Sureshchandra M Ojha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bookham Technology Plc, Sureshchandra M Ojha filed Critical Bookham Technology Plc
Priority to AU2003233869A priority Critical patent/AU2003233869A1/en
Publication of WO2003093886A2 publication Critical patent/WO2003093886A2/en
Publication of WO2003093886A3 publication Critical patent/WO2003093886A3/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12169—Annealing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

A method of forming at least one optic element in an optical layer, including the steps of: providing a mask over the optical layer (21); patterning the mask by removal of selected portions thereof to define at least one hole in the mask that exposes a selected portion of the optical layer; and etching the optical layer through the at least one hole; wherein the mask includes a layer of doped silicon oxide, and including the step of prior to the etching step flowing the layer of doped silicon oxide so as to smooth the edges of the patterned mask that define the hole; and the use of this technique for the purpose of increasing the smoothness with which the vertical walls of one or more optical elements can be formed in an underlying optical layer during a subsequent step of etching through the patterned mask.
PCT/GB2003/001870 2002-05-02 2003-04-30 Method of etching optic elements WO2003093886A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003233869A AU2003233869A1 (en) 2002-05-02 2003-04-30 Method of etching optic elements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0210117.8 2002-05-02
GB0210117A GB0210117D0 (en) 2002-05-02 2002-05-02 Method of teaching optic elements

Publications (2)

Publication Number Publication Date
WO2003093886A2 WO2003093886A2 (en) 2003-11-13
WO2003093886A3 true WO2003093886A3 (en) 2004-02-26

Family

ID=9935988

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2003/001870 WO2003093886A2 (en) 2002-05-02 2003-04-30 Method of etching optic elements

Country Status (3)

Country Link
AU (1) AU2003233869A1 (en)
GB (1) GB0210117D0 (en)
WO (1) WO2003093886A2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387750A (en) * 1986-09-30 1988-04-19 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387750A (en) * 1986-09-30 1988-04-19 Nec Corp Manufacture of semiconductor device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ARNOT H E G ET AL: "EXTREMELY SMOOTH SIDEWALLS FOR GAAS/ALGAAS RIDGE WAVEGUIDES", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 29, no. 12, 10 June 1993 (1993-06-10), pages 1131 - 1133, XP000373192, ISSN: 0013-5194 *
BEHFAR-RAD A ET AL: "MASKING CONSIDERATIONS IN CHEMICALLY ASSISTED ION BEAM ETCHING OF GAAS/ALGAAS LASER STRUCTURES", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE, US, vol. 136, no. 3, 1 March 1989 (1989-03-01), pages 779 - 782, XP000052649, ISSN: 0013-4651 *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 322 (E - 652) 31 August 1988 (1988-08-31) *
YOUTSEY C ET AL: "FABRICATION OF INP-BASED WAVELENGTH DIVISION MULTIPLEXING ARRAYED WAVEGUIDE FILTERS USING CHEMICALLY ASSISTED ION BEAM ETCHING", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 14, no. 6, 1 November 1996 (1996-11-01), pages 4091 - 4095, XP000721134, ISSN: 0734-211X *

Also Published As

Publication number Publication date
GB0210117D0 (en) 2002-06-12
WO2003093886A2 (en) 2003-11-13
AU2003233869A1 (en) 2003-11-17
AU2003233869A8 (en) 2003-11-17

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