WO2003090324A3 - Erzeugung von laserstrahlung mit geringer bandbreite zum frequenzkonversion - Google Patents

Erzeugung von laserstrahlung mit geringer bandbreite zum frequenzkonversion Download PDF

Info

Publication number
WO2003090324A3
WO2003090324A3 PCT/EP2003/004099 EP0304099W WO03090324A3 WO 2003090324 A3 WO2003090324 A3 WO 2003090324A3 EP 0304099 W EP0304099 W EP 0304099W WO 03090324 A3 WO03090324 A3 WO 03090324A3
Authority
WO
WIPO (PCT)
Prior art keywords
frequency
laser
low bandwidth
selective element
frequency conversion
Prior art date
Application number
PCT/EP2003/004099
Other languages
English (en)
French (fr)
Other versions
WO2003090324A2 (de
Inventor
Matthias Lenzner
Georg Korn
Olaf Kittelmann
Original Assignee
Katana Technologies Gmbh
Matthias Lenzner
Georg Korn
Olaf Kittelmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Katana Technologies Gmbh, Matthias Lenzner, Georg Korn, Olaf Kittelmann filed Critical Katana Technologies Gmbh
Priority to AU2003232487A priority Critical patent/AU2003232487A1/en
Publication of WO2003090324A2 publication Critical patent/WO2003090324A2/de
Publication of WO2003090324A3 publication Critical patent/WO2003090324A3/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1062Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/1601Solid materials characterised by an active (lasing) ion
    • H01S3/162Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1625Solid materials characterised by an active (lasing) ion transition metal titanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16Solid materials
    • H01S3/163Solid materials characterised by a crystal matrix
    • H01S3/1631Solid materials characterised by a crystal matrix aluminate
    • H01S3/1636Al2O3 (Sapphire)

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

Die vorliegende Erfindung betrifft eine Vorrichtung und ein entsprechendes Verfahren zum Erzeugen von Laserstrahlung mit geringer Bandbreite und nachfolgender effizienter Frequenzkonversion. Diese Vorrichtung umfasst folgende Bestandteile: eine Laserquelle (1), ein frequenzselektiven Element (3), ein Frequenzwandler (4-6), ein x-y Scanner (7) wobei das frequenzselektive Element (3) zwei dielektrische Schichtfolgen umfasst, die durch eine Zwischenschicht ('spacer') getrennt sind, wobei die gesamte Schichfolge auf einem transparenten Substrat aufgebracht ist. Das erfindungsgemässe Verfahren umfasst folgende Schritte: Erzeugung eines Laserstrahles; Zwingen des Lasers zur schmalbandigen Emission mittels eines einzelnen frequenzselektiven Elements (3); Abstimmung der Laserfrequenz mittels Drehung des Spektrometers (3) um eine Achse, die senkrecht zum Laserstrahl ist; Verstärkung der Frequenz mittels eines Frequenzwandlers (4-6); Fokussierung und Ablenkung der Strahlung mittels eines x-y Scanners (7).
PCT/EP2003/004099 2002-04-19 2003-04-18 Erzeugung von laserstrahlung mit geringer bandbreite zum frequenzkonversion WO2003090324A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003232487A AU2003232487A1 (en) 2002-04-19 2003-04-18 Production of laser radiation with a low bandwidth for frequency conversion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10217521.7 2002-04-19
DE10217521 2002-04-19

Publications (2)

Publication Number Publication Date
WO2003090324A2 WO2003090324A2 (de) 2003-10-30
WO2003090324A3 true WO2003090324A3 (de) 2004-07-01

Family

ID=29224596

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/004099 WO2003090324A2 (de) 2002-04-19 2003-04-18 Erzeugung von laserstrahlung mit geringer bandbreite zum frequenzkonversion

Country Status (2)

Country Link
AU (1) AU2003232487A1 (de)
WO (1) WO2003090324A2 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933439A (en) * 1996-06-18 1999-08-03 Fuji Photo Film Co., Ltd. Etalon and single longitudinal mode laser
US6301042B1 (en) * 1998-01-15 2001-10-09 Ciena Corporation Fabry-perot optical filter with chirped dielectric mirrors
US20020013575A1 (en) * 2000-03-04 2002-01-31 Ming Lai Customized laser ablation of corneas with solid state lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933439A (en) * 1996-06-18 1999-08-03 Fuji Photo Film Co., Ltd. Etalon and single longitudinal mode laser
US6301042B1 (en) * 1998-01-15 2001-10-09 Ciena Corporation Fabry-perot optical filter with chirped dielectric mirrors
US20020013575A1 (en) * 2000-03-04 2002-01-31 Ming Lai Customized laser ablation of corneas with solid state lasers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZIMMERMANN C ET AL: "DESIGN FOR A COMPACT TUNABLE TI:SAPPHIRE LASER", OPTICS LETTERS, OPTICAL SOCIETY OF AMERICA, WASHINGTON, US, vol. 20, no. 3, 1 February 1995 (1995-02-01), pages 297 - 299, XP000482477, ISSN: 0146-9592 *

Also Published As

Publication number Publication date
AU2003232487A8 (en) 2003-11-03
AU2003232487A1 (en) 2003-11-03
WO2003090324A2 (de) 2003-10-30

Similar Documents

Publication Publication Date Title
KR100367856B1 (ko) 세라믹 그린 시트를 가공하는 방법 및 그것을 가공하는 장치
CN102959811B (zh) 用于组合用于数字输出的激光器阵列的系统和方法
TW200715415A (en) Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7501747B2 (en) Integrated circuit optical signal emitters
CN107611775A (zh) 一种半导体激光器及其制作方法
JP6261644B2 (ja) ウェーハをカットするための方法及びデバイス
HK1092643A1 (en) Apparatus and method for fabricating, sorting, andintegrating materials with holographic optical tr aps
EP2315289A3 (de) Musterung von Anordnungen mittels Laser
WO2006033133A3 (en) Method and device for multiplying optical frequencies by a factor 1.5
KR20040051596A (ko) 기계 가공 기판, 특히 반도체 웨이퍼
US9461442B2 (en) Laser comb generator
WO2002021649A3 (en) Method and device for generating radiation with stabilized frequency
WO2003010862A3 (en) Tunable semiconductor laser with integrated wideband reflector
WO2001075948A1 (fr) Appareil d'exposition a des faisceaux multiples a objectif a plusieurs axes, objectif a plusieurs axes de focalisation de faisceaux d'electrons, et procede de fabrication de dispositifs semi-conducteurs
TWI267244B (en) Semiconductor laser array and manufacturing method for semiconductor laser array
JP2002016269A (ja) 薄膜太陽電池パネルの製造方法及び製造装置
WO2002059926A3 (en) Fabrication of high resistivity structures using focused ion beams
WO2000025086A8 (en) Apparatus and method for producing a spectrally variable radiation source and systems including same
WO2003090324A3 (de) Erzeugung von laserstrahlung mit geringer bandbreite zum frequenzkonversion
EP0828168A3 (de) Optische Wellenleiteranordnung, deren Herstellungsverfahren und Vorrichtung zur Frequenzverdopplung
WO2004088764A3 (en) Ion beam method for removing an organic light emitting material
JP2001210851A (ja) 集積型薄膜太陽電池
EP1615273A4 (de) Zusammengesetzter halbleiterwafer und prozess zu seiner herstellung
WO2002063732A3 (de) Laserstruktur und verfahren zur einstellung einer definierten wellenlänge
JP2004165436A (ja) 半導体発光素子の製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP