WO2003085747A3 - Method for the electrodeposition of a material belonging to column iv - Google Patents

Method for the electrodeposition of a material belonging to column iv Download PDF

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Publication number
WO2003085747A3
WO2003085747A3 PCT/FR2003/000977 FR0300977W WO03085747A3 WO 2003085747 A3 WO2003085747 A3 WO 2003085747A3 FR 0300977 W FR0300977 W FR 0300977W WO 03085747 A3 WO03085747 A3 WO 03085747A3
Authority
WO
WIPO (PCT)
Prior art keywords
column
electrode
electrodeposition
reactor
nickel
Prior art date
Application number
PCT/FR2003/000977
Other languages
French (fr)
Other versions
WO2003085747A2 (en
Inventor
Remi Colin
Original Assignee
Remi Colin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Remi Colin filed Critical Remi Colin
Priority to EP03740537A priority Critical patent/EP1493192A2/en
Priority to AU2003260703A priority patent/AU2003260703A1/en
Publication of WO2003085747A2 publication Critical patent/WO2003085747A2/en
Publication of WO2003085747A3 publication Critical patent/WO2003085747A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention concerns a method involving a reactor (1) wherein is deposited a material, belonging to column IV of the periodic table, said reactor (1) consisting of a closed chamber (2), containing an aqueous medium (3), consisting of distilled water, heating elements (4), a first electrode (7) constituting the material to be deposited, and a second electrode (9) constituting the metal support, copper or nickel, designed to receive the layer of the material and a third metal electrode (8), copper or nickel, designed to apply an electric field inside the chamber.
PCT/FR2003/000977 2002-04-05 2003-03-27 Method for the electrodeposition of a material belonging to column iv WO2003085747A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03740537A EP1493192A2 (en) 2002-04-05 2003-03-27 Method for depositing a material belonging to column iv of the periodic table, in aqueous medium on a conductive or semiconductive support
AU2003260703A AU2003260703A1 (en) 2002-04-05 2003-03-27 Method for the electrodeposition of a material belonging to column iv

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR02/04368 2002-04-05
FR0204368A FR2838236B1 (en) 2002-04-05 2002-04-05 PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICUM IN AQUEOUS MEDIUM ON A CONDUCTIVE OR SEMICONDUCTOR SUPPORT

Publications (2)

Publication Number Publication Date
WO2003085747A2 WO2003085747A2 (en) 2003-10-16
WO2003085747A3 true WO2003085747A3 (en) 2004-04-01

Family

ID=28052210

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/000977 WO2003085747A2 (en) 2002-04-05 2003-03-27 Method for the electrodeposition of a material belonging to column iv

Country Status (4)

Country Link
EP (1) EP1493192A2 (en)
AU (1) AU2003260703A1 (en)
FR (1) FR2838236B1 (en)
WO (1) WO2003085747A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100570916C (en) 2005-05-30 2009-12-16 松下电器产业株式会社 Thermoelectric (al) inversion material, the electronic equipment and the cooling device that use the thermoelectric conversion elements of this thermoelectric (al) inversion material and have this element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341610A (en) * 1978-06-22 1982-07-27 Schumacher John C Energy efficient process for continuous production of thin semiconductor films on metallic substrates
US4571328A (en) * 1982-09-24 1986-02-18 Teknico Industries, Inc. Aqueous hydrides
US5462723A (en) * 1993-10-01 1995-10-31 Coralplex, Inc. Aqueous hydrides and method of manufacture therefore

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341610A (en) * 1978-06-22 1982-07-27 Schumacher John C Energy efficient process for continuous production of thin semiconductor films on metallic substrates
US4571328A (en) * 1982-09-24 1986-02-18 Teknico Industries, Inc. Aqueous hydrides
US5462723A (en) * 1993-10-01 1995-10-31 Coralplex, Inc. Aqueous hydrides and method of manufacture therefore

Also Published As

Publication number Publication date
EP1493192A2 (en) 2005-01-05
WO2003085747A2 (en) 2003-10-16
FR2838236B1 (en) 2004-07-30
AU2003260703A1 (en) 2003-10-20
AU2003260703A8 (en) 2003-10-20
FR2838236A1 (en) 2003-10-10

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