EP1493192A2 - Method for depositing a material belonging to column iv of the periodic table, in aqueous medium on a conductive or semiconductive support - Google Patents
Method for depositing a material belonging to column iv of the periodic table, in aqueous medium on a conductive or semiconductive supportInfo
- Publication number
- EP1493192A2 EP1493192A2 EP03740537A EP03740537A EP1493192A2 EP 1493192 A2 EP1493192 A2 EP 1493192A2 EP 03740537 A EP03740537 A EP 03740537A EP 03740537 A EP03740537 A EP 03740537A EP 1493192 A2 EP1493192 A2 EP 1493192A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- support
- layer
- intended
- aqueous medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000012736 aqueous medium Substances 0.000 title claims abstract description 18
- 230000000737 periodic effect Effects 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 title description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- 239000012153 distilled water Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002609 medium Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 238000007654 immersion Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Chemical group 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 150000007514 bases Chemical class 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- PROCESS FOR THE DEPOSITION OF A MATERIAL BELONGING TO COLUMN IV OF THE CLASSIFICATION TABLE. IN AN AQUEOUS MEDIUM ON A CONDUCTIVE OR SEMICONDUCTOR SUPPORT.
- the present invention relates to a method of depositing a material M, belonging to column IV of the classification table of D. Mendeleev, in an aqueous medium specifically adapted to be produced on a conductive or semiconductor support.
- This process is particularly suitable for the production of photo voltaic cells and electroluminescent displays, of large dimensions and at low cost, and in the manufacture of semiconductor components.
- Vacuum deposition consists in transferring the molecules of semiconductor materials onto a suitable support; this operation is carried out under vacuum for essentially two reasons:
- the transfer is carried out by bringing the source of semiconductor material to an appropriate temperature by direct heating, by bombardment of a focused electron beam or by direct heating by radio frequency.
- the process of the vapor current pyrolysis reaction is used when the useful evaporation temperature of the material is too high to be able to guarantee the absence of contamination by the surrounding medium; which is the case of silicon.
- a stream of "silane vapor" is encountered with a stream of gas which can react with this vapor, giving silicon as a solid product.
- the deposited layer may be monocrystalline or composed of microcrystalline islands (polycrystalline layer) of various sizes regardless of the deposition method chosen.
- the invention therefore more particularly aims to eliminate these drawbacks.
- the process according to the invention may cause a reactor to be deposited in which the deposition of material M will be carried out, said reactor consisting of a closed enclosure containing the aqueous medium consisting of distilled water, heating elements, a first electrode constituting the material M to be deposited, a second electrode constituting the copper, or nickel support, intended to receive the silicon layer and a third electrode, copper, or nickel, intended to apply an electric field inside the enclosure.
- the method according to the invention may then include the following operating phases: • prior oxidation of the support, intended to receive the layer of material M, by immersion in a hydrogen peroxide bath at 130 volumes for 30 seconds at room temperature, said support being made of copper, • heating the distilled water of the reactor to 100 ° C. so as to eliminate the dissolved gases, • addition of potassium hydroxide reactor to the bath, at a rate of 5 grams per liter of distilled water,
- the single figure is a schematic representation of the material deposition reactor M, belonging to column IV of the classification table of D. Mendeleev.
- reactor 1 consists of:
- a plurality of conductive turns 5 making it possible to create a magnetic field in said enclosure 2,
- a plurality of electrodes 6 making it possible to create an electric field in said enclosure 2, • an electrode 7 constituting the material to be deposited, from column IV of the classification table by D.
- Mendeleev that is to say carbon, germanium and silicon,
- An electrode 8 made of semiconductor or metallic material intended to create an electric field in the aqueous medium
- a plurality of electrodes 10 made up of receptacles of other semiconductor or metallic materials in the form of powder,
- a device 11 making it possible to inject doping compounds with the layer deposited in gaseous form
- a device 12 making it possible to inject doping compounds with the layer deposited in liquid form
- the electric generators supplying the plurality of heating elements 4, the plurality of conductive turns 5 and the plurality of electrodes 6 are not shown.
- the reactor 1 is equipped with windows (not shown) allowing the application of visible and non-visible light radiation (UV, IR), HF and X radiation, at the level of the electrode 9, making it possible to promote or disadvantage the deposition of the layer of material from the electrodes 7 or 10.
- UV, IR visible and non-visible light radiation
- HF HF
- X radiation X-ray X
- These radiations are in particular intended to illuminate the electrode 9 in a homogeneous or inhomogeneous manner in order to obtain zones with different properties or a non-uniform layer thickness; one can thus carry out a deposit in three dimensions.
- the electrode 7 is made of 10 " purification silicon 17 ,
- the electrode 8 is made of nickel
- the electrode 9 intended to receive the silicon layer is made of copper, and has undergone a prior oxidation by immersion in a hydrogen peroxide bath at 130 volumes for 30 seconds, "the aqueous medium 3, contained in the enclosure 2 , consists of distilled water previously heated to 100 ° C in order to remove the dissolved gases,
- the electrodes 7 and 8 are electrically connected to ground,
- the electrode 9 is connected to a voltage generator 15, referenced to said mass,
- the voltage generator 15 applies, through a resistance (not shown) of 1000 Ohms, a rectangular voltage, of duty cycle, of amplitude varying between 1 V and 4.5 V and whose period is 10 milliseconds,
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0204368A FR2838236B1 (en) | 2002-04-05 | 2002-04-05 | PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICUM IN AQUEOUS MEDIUM ON A CONDUCTIVE OR SEMICONDUCTOR SUPPORT |
FR0204368 | 2002-04-05 | ||
PCT/FR2003/000977 WO2003085747A2 (en) | 2002-04-05 | 2003-03-27 | Method for the electrodeposition of a material belonging to column iv |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1493192A2 true EP1493192A2 (en) | 2005-01-05 |
Family
ID=28052210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03740537A Withdrawn EP1493192A2 (en) | 2002-04-05 | 2003-03-27 | Method for depositing a material belonging to column iv of the periodic table, in aqueous medium on a conductive or semiconductive support |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1493192A2 (en) |
AU (1) | AU2003260703A1 (en) |
FR (1) | FR2838236B1 (en) |
WO (1) | WO2003085747A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006129459A1 (en) | 2005-05-30 | 2006-12-07 | Matsushita Electric Industrial Co., Ltd. | Thermoelectric material, thermoelectric converter using same, and electronic device and cooling device comprising such thermoelectric converter |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4341610A (en) * | 1978-06-22 | 1982-07-27 | Schumacher John C | Energy efficient process for continuous production of thin semiconductor films on metallic substrates |
US4571328A (en) * | 1982-09-24 | 1986-02-18 | Teknico Industries, Inc. | Aqueous hydrides |
WO1995009809A1 (en) * | 1993-10-01 | 1995-04-13 | Coralplex, Inc. | Aqueous hydrides and method of manufacture therefor |
-
2002
- 2002-04-05 FR FR0204368A patent/FR2838236B1/en not_active Expired - Lifetime
-
2003
- 2003-03-27 AU AU2003260703A patent/AU2003260703A1/en not_active Abandoned
- 2003-03-27 EP EP03740537A patent/EP1493192A2/en not_active Withdrawn
- 2003-03-27 WO PCT/FR2003/000977 patent/WO2003085747A2/en not_active Application Discontinuation
Non-Patent Citations (1)
Title |
---|
See references of WO03085747A2 * |
Also Published As
Publication number | Publication date |
---|---|
FR2838236B1 (en) | 2004-07-30 |
AU2003260703A8 (en) | 2003-10-20 |
WO2003085747A2 (en) | 2003-10-16 |
WO2003085747A3 (en) | 2004-04-01 |
FR2838236A1 (en) | 2003-10-10 |
AU2003260703A1 (en) | 2003-10-20 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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Extension state: AL LT LV MK |
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17Q | First examination report despatched |
Effective date: 20050301 |
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RTI1 | Title (correction) |
Free format text: METHOD FOR FORMING A SILICON LAYER BY ELECTROLYTIC DEPOSITION |
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GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
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STAA | Information on the status of an ep patent application or granted ep patent |
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18D | Application deemed to be withdrawn |
Effective date: 20090508 |