WO2003083948A1 - Molecular integrated circuit molecular electronic devices - Google Patents

Molecular integrated circuit molecular electronic devices Download PDF

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Publication number
WO2003083948A1
WO2003083948A1 PCT/CN2002/000208 CN0200208W WO03083948A1 WO 2003083948 A1 WO2003083948 A1 WO 2003083948A1 CN 0200208 W CN0200208 W CN 0200208W WO 03083948 A1 WO03083948 A1 WO 03083948A1
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Prior art keywords
molecular
circuit
type semiconductor
entire
semiconductor device
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PCT/CN2002/000208
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French (fr)
Chinese (zh)
Inventor
Wennan Din
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Wennan Din
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Priority to PCT/CN2002/000208 priority Critical patent/WO2003083948A1/en
Priority to AU2002252927A priority patent/AU2002252927A1/en
Publication of WO2003083948A1 publication Critical patent/WO2003083948A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

Definitions

  • the present invention relates to the development of electrical and electronic industries following electron tubes, transistors, and integrated circuits.
  • a new generation of electronic devices is integrated with molecular technology.
  • the first generation of electrical and electronic devices was an electron tube using vacuum metal electrode hot electron emission technology. It has the advantages of ultra high frequency, high power, easy installation, and reliability.
  • electrical appliances using electronic tubes are composed of electronic devices such as tubes, resistors, capacitors, and inductors, electronic tube holders, substrates (printed circuit boards), and electronic circuit loads. They use analog and digital technologies in traditional electrical technology, which are bulky and consume power. More, heavy weight, complicated structure, complicated process, low stability, reliable Poor performance, weak anti-interference ability, large loss, short life, high cost and so on.
  • the second-generation electrical and electronic devices are transistors using semiconductor electronic (N-type semiconductor) and hole-type (P-type semiconductor) technology. It has the advantages of small size, light weight, and low power consumption. Therefore, the transistor quickly replaced the tube in electrical and electronic equipment.
  • the use of transistors, resistors, capacitors, inductors and other electronic components, substrates (printed circuit boards), and electronic circuit loads in transistor electrical and electronic equipment uses analog and digital technologies.
  • Traditional electrical technology has many components, solder joints, and structures. Disadvantages such as complexity, complicated process, low stability, poor reliability, weak anti-interference ability, large loss, short life and high cost.
  • the third generation of electrical and electronic devices is a small-scale, large-scale, ultra-large-scale integrated circuit with a certain function, which uses transistors on a semiconductor substrate to make transistors, and resistors and capacitors are formed by internal connections. It has the characteristics of high integration, small size, low power consumption, good consistency, low cost, stability, and good reliability. Therefore, integrated circuits are widely used in electrical and electronic equipment to replace transistors. However, in electrical and electronic equipment using integrated circuits, integrated circuits and peripheral circuits such as corresponding resistors and capacitors, substrates (printed circuit boards), and electronic circuit loads are composed of traditional electrical technology using analog and digital technologies. Micropower integration exists.
  • the purpose of the present invention is to design an integrated molecular technology, electronic device, molecular integrated circuit, and molecular electrical appliance.
  • the molecular integrated circuit and molecular electrical appliance completely change the structure of the electronic tube electronic circuit and the electronic circuit structure of the transistor used in electrical products of the electrical and electronic industries.
  • the molecular circuit uses integrated molecular technology and integrated technology to make it surprisingly small in size, with minimal losses, super functional capabilities, stability, high reliability, strong anti-interference ability, and cost. Low characteristics. It can be widely used in various applications in various industries such as industrial production, agricultural production, national defense construction, daily life in the water, land and air fields.
  • 1/1 0000 (micron) is the standard quantization principle of Angstrom, the basic circuit structure
  • the processing system consists of P / N ⁇ and ⁇ / ⁇ (the two major types of semiconductor devices, resistors, capacitors, inductors and other electronic devices, conductor devices, and insulator devices use composite complementary forms to form various functional processing systems.
  • P / N ⁇ and ⁇ / ⁇ the two major types of semiconductor devices, resistors, capacitors, inductors and other electronic devices, conductor devices, and insulator devices use composite complementary forms to form various functional processing systems.
  • FIG. 1 is a molecular circuit structure diagram of a molecular integrated circuit, a molecular electrical device, and a P / N Mie molecular circuit.
  • Figure 2 is a molecular circuit structure diagram of the molecular integrated circuit molecular electrical appliance N / P Mie .
  • FIG. 4 is a structural diagram of an internal circuit of a molecular integrated circuit molecular electrical appliance N / P M1 molecular circuit.
  • Molecular integrated circuits, molecular electrical circuits, and molecular circuits are composed of molecular control resistors M R , molecular controllers M e , molecular power devices M P , resistors, capacitors, inductors and other electronic devices combined with various signals and circuit transformations to form various application function processing systems.
  • the P / N M1C circuit uses P inP as a molecular control point, N.
  • ut is the molecular power point.
  • the molecular circuit is controlled by R for the entire molecular circuit molecule.
  • Type semiconductor tube is the molecular controller for the entire molecular circuit, N.
  • Ut is an N-type semiconductor tube as a molecular power device for the entire molecular circuit.
  • a P-type semiconductor device and an N-type semiconductor device are constructed using complementary compounding.
  • the resistance R is the molecular control resistance M R of the entire molecular circuit, and the molecular control resistance M R is controlled by the P-type half.
  • the power input terminal (such as the emitter or source) of the conductor device forms the molecular control point of the entire molecular circuit.
  • the molecular control resistor M R and the P-type semiconductor device constitute the molecular input circuit and the molecular controller M c of the entire molecular circuit. It completes the entire molecular circuit control processing function.
  • the output of a P-type semiconductor device (such as a collector or a drain) is directly coupled to the input of an N-type semiconductor device (such as a base or a gate). It forms the molecular power point of the entire molecular circuit.
  • the N-type semiconductor device constitutes the entire molecular circuit elements, and an output circuit molecular dynamometer M P, molecules which completed the processing circuit power molecule.
  • P Dust ut is the molecular power point.
  • the molecular circuit is controlled by R for the entire molecular circuit molecule control resistor, ⁇ is an N-type semiconductor tube for the molecular controller of the entire molecular circuit, and P. ut is a P-type semiconductor tube for the molecular power of the entire molecular circuit.
  • N / P MIC The N-type semiconductor device and the P-type semiconductor device are used in the molecular circuit to form a complementary compound.
  • the resistance R is the molecular control resistance M R for the entire molecular circuit.
  • the molecular control resistance is controlled by the power source of the N-type semiconductor device.
  • the output (such as the emitter or source) forms the control point of the entire molecular circuit.
  • the molecular control resistor 1 ⁇ 1 and the N-type semiconductor device constitute the molecular input circuit and molecular controller Uc of the entire molecular circuit, which completes the entire molecular circuit. Molecular control processing functions.
  • the input of the N-type semiconductor device (such as the collector or the drain) is directly coupled to the output terminal (such as the base or the gate) of the P-type semiconductor device, which forms the molecular power point of the entire sub-circuit.
  • the P-type semiconductor device constitutes molecular entire molecule circuit output circuitry and molecular dynamometer M P, molecules which completed the circuit Molecular power processing function.
  • the working process is that when the switch K is closed and the power is turned on, the molecular integrated circuit and the molecular electrical device complete (reach) the specific performance function processing of the electrical product.
  • the power V cc molecular direct current is divided into two circuit paths.
  • One circuit passes R resistors to perform molecular control of the entire molecular circuit to form a molecular control resistor ⁇ which is output to the stable devices D and P type semiconductor devices of the M c molecular controller.
  • Part of the output terminal of the molecular controller (such as collector or drain) is directly coupled to the input terminal of the N-type semiconductor device of the MP molecular power device (such as input base or gate) of the power devices and other molecules (e.g., base or gate) control resistor R back to the negative power source GND, a portion of the molecules M c controller output terminal (e.g., base or gate) of the output
  • the circuit After returning to the negative electrode of the power source GND through the control resistor R, the circuit constitutes a stable circuit of the entire molecular circuit and a molecular controller circuit of voltage and current negative feedback.
  • the other circuit passes the input terminal of the N-type semiconductor device of the MP molecular power device (such as the collector or the drain) and the anti-peak, the anti-pass protection device D, and the molecular power device load 1 ⁇ back to the power source GND negative electrode, the circuit constitutes the entire molecule Circuit anti-peak anti-pass protection circuit and molecular power device circuit of molecular power appliances.
  • a / M or D / M operating signal output from an output terminal of the P-type semiconductor device controller M C molecule (e.g., a collector or drain) coupled directly to the input of the molecule P M is a power input terminal of the N-type semiconductor device ( The base or gate), dried over molecular function processing power devices M P molecules constituting the output circuit N OUT.
  • M C molecule e.g., a collector or drain
  • N / P, n molecular circuit molecular control resistance M R , molecular controller, molecular power device electrical principle and electrical function.
  • the DC power of the power V CC molecule After the DC power of the power V CC molecule is input, it is divided into two circuit paths.
  • One circuit passes the R resistor to perform molecular control on the entire molecular circuit to form a molecular control resistor! ⁇ ! ⁇
  • N D M C-type semiconductor device controller molecule e.g., a source or emitter
  • a part of the molecule M C input of the controller e.g., a collector or drain
  • the input is directly coupled to the output terminal (such as the base or gate) of the P molecular power device P type semiconductor device and the output terminal (such as the base or gate) of the molecular power device.
  • the control resistor R is connected to the positive electrode V CC of the power.
  • the input terminal of the MC molecular controller (such as the base or the gate) is input to the positive electrode V CC of the power supply through a control resistor, and the circuit constitutes a stable circuit of the entire molecular circuit and a molecular controller circuit of voltage and current negative feedback.
  • the other circuit passes the output terminal (such as the emitter or source) of the P molecular power device P-type semiconductor device and the anti-peak, anti-pass protection device D and the molecular power device load RL, R r back to the power supply negative electrode GND.
  • the molecular power of the entire molecular circuit anti-peak and reverse protection circuit and molecular power appliances ⁇ ⁇ Circuit.
  • the A / M or D / M working signal is input from the input terminal (such as the base or the gate) of the N-type semiconductor device of the molecular controller M c to form the entire molecular circuit input circuit N inp .
  • a / M or D / M operating signal from the input terminal is directly coupled to the N-type semiconductor device controller M c molecule (e.g., a collector or drain) power is inputted to the molecule of the output terminal P M P type semiconductor device (e.g. Base electrode or grid)
  • M c molecule e.g., a collector or drain
  • P M P type semiconductor device e.g. Base electrode or grid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The present invention discloses a processing system constructed with two sorts of basic circuits, that is to say P/NMIC system and N/PMIC system using the theory of standard quantizing molecule technique 1/10000(micrometer) angstrom. The basic circui t can be signal and circuit convented and combinated so that they can construct many kinds of molecular integrated circuit molecular electronic devices with special purpose, which can take place the traditional electronic devices using in moden electrification and electronic industrial productions, such as radio tube circuit productions, using analog technique and digital technique.

Description

分子集成电路分子电器 本发明涉及一种电气、 电子工业发展继电子管、 晶体管、集成电路之后新一代电子器件一体化分子技 术 电 子 器 件 —— 分 子 集 成 电 路 分 子 电 器 The present invention relates to the development of electrical and electronic industries following electron tubes, transistors, and integrated circuits. A new generation of electronic devices is integrated with molecular technology.
( I EM— M I C/MEA) 。 (I EM— M I C / MEA).
全面开发应用于水、 陆、 空领域中工业生产、 农 业生产、 国防建设、 日常生活等各行业各种应用功能 器件， 利用分子技术将电气、 电子工业电器产品中应 用各种微功率、 小功率、 中功率、 大功率、 超大功率 电气、 电子器件和各种应用功能性质电路组合形成免 外围 电路一体化分子技术结构方式， 改变采用 电子 管、 晶体管、 集成电路结构电器产品技术， 推动全球 电气、 电子工业发展进入到体积小得出奇、 损耗微乎 : 其微、 功能具有超大能力、 稳定、 可靠性极高、 抗干 扰能力极强、 成本低的新一代分子技术科技革命里 程。 Comprehensively develop various application functional devices used in various industries such as industrial production, agricultural production, national defense construction, and daily life in the fields of water, land and air, and use molecular technology to apply various micropower and low power to electrical and electronic industrial electrical products , Medium-power, high-power, ultra-high-power electrical, electronic devices, and various application functional circuits combine to form a molecular technology structure that eliminates the need for peripheral circuits, and changes the technology of electronic products using electronic tubes, transistors, and integrated circuits to promote global electrical and electronics Industrial development has entered a surprisingly small size with little loss : its micro-function, super-capacity, stability, high reliability, strong anti-interference ability, and low-cost new-generation molecular technology revolution milestone.
现代、 全球电气、 电子工业发展从电子管、 晶体 管、 集成电路开发应用经过三次升级换代科技革命。  The development of modern, global electrical and electronic industries has undergone three upgrades from the development of electronic tubes, transistors, and integrated circuits to a technological revolution.
第一代电气电子器件是采用真空金属 电极热 电 子发射技术的电子管。 它具有超高频、 大功率、 易安 装、 可靠等优点。 但是采用电子管的电器电子设备由 电子管、 电阻、 电容、 电感等电子器件、 电子管座、 基板 （ 印刷电路板）、 电子电路负载构成运用模拟技 术、 数字技术传统电气技术方式， 存在体积大、 耗电 多、 重量大、 结构复杂、 工艺繁琐、 稳定性低、 可靠 性差、 抗干扰能力弱、 损耗大、 寿命短、 成本高等缺 占 。 o The first generation of electrical and electronic devices was an electron tube using vacuum metal electrode hot electron emission technology. It has the advantages of ultra high frequency, high power, easy installation, and reliability. However, electrical appliances using electronic tubes are composed of electronic devices such as tubes, resistors, capacitors, and inductors, electronic tube holders, substrates (printed circuit boards), and electronic circuit loads. They use analog and digital technologies in traditional electrical technology, which are bulky and consume power. More, heavy weight, complicated structure, complicated process, low stability, reliable Poor performance, weak anti-interference ability, large loss, short life, high cost and so on. o
第二代电气电子器件是采用半导体电子型 （ N 型 半导体） 和空穴型 （ P 型半导体） 技术结构晶体管。 它具有体积小， 重量轻， 耗电小等优点。 因此， 晶体 管在电器电子设备中， 迅速取代了 电子管。 但是采用 晶体管电器电子设备中采用晶体管、 电阻、 电容、 电 感等电子元件、 基板 （ 印刷电路板）、 电子电路负载 构成运用模拟技术、 数字技术传统电气技术方式， 存 在元件多， 焊点多， 结构复杂、 工艺繁琐、 稳定性低、 可靠性差、 抗干扰能力弱、 损耗大、 寿命短、 成本高 等缺点。  The second-generation electrical and electronic devices are transistors using semiconductor electronic (N-type semiconductor) and hole-type (P-type semiconductor) technology. It has the advantages of small size, light weight, and low power consumption. Therefore, the transistor quickly replaced the tube in electrical and electronic equipment. However, the use of transistors, resistors, capacitors, inductors and other electronic components, substrates (printed circuit boards), and electronic circuit loads in transistor electrical and electronic equipment uses analog and digital technologies. Traditional electrical technology has many components, solder joints, and structures. Disadvantages such as complexity, complicated process, low stability, poor reliability, weak anti-interference ability, large loss, short life and high cost.
第三代电气电子器件是采用在半导体基片上制 造晶体管， 电阻、 电容等器件由内部连接装封形成， 具有一定功能的小规模、大规模、超大规模集成电路。 它具有集成度高、 体积小、 耗电小、 一致性好、 成本 低、 稳定、 可靠性好等特点。 因此， 集成电路在电器 电子设备中得到广泛应用取代晶体管。但是采用集成 电路的电器电子设备中采用集成电路和相应电阻、 电 容等外围电路、 基板 （ 印刷电路板）、 电子电路负载 构成运用模拟技术、 数字技术传统电气技术方式， 存 在微功率化集成， 小功率化集成、 中功率化集成、 大 功率化集成、 超大功率化集成小规模、 大规模、 超大 规模集成电路， 单块集成电路只能完成单元规模性功 能， 造成成本较高、 结构、 工艺较复杂、 繁琐等缺点。 本发明的 目 的是， 设计一种一体化分子技术电子 器件 分子集成电路分子电器， 该分子集成电路分 子电器完全改变了电气、 电子工业电器产品中所应用 电子管电子电路结构电器产品、 晶体管电子电路结构 电器产品， 集成电路结构电器产品传统技术结构方式 和运用模拟技术、 数字技术传统电气技术方式， 实现 了 电子管、 晶体管、 集成电路结构电器产品传统技术 结构方式和运用模拟技术、数字技术传统电气技术方 式无法达到的技术特性和技术效应， 可取代现代国 内、 外电气、 电子工业电器产品中所应用电子管电子 电路结构电器产品、 晶体管电子电路结构电器产品， 集成电路结构电器产品传统技术结构方式和运用模 拟技术、 数字技术传统电气技术方式电器产品。 利用 分子技术形成无限发展空间和无条件局限领域技术 将电气、 电子工业电器产品中应用各种微功率、 小功 率、 中功率、 大功率、 超大功率电气、 电子器件和各 种应用功能性质电路组合形成免外围 电路一体化分 子技术结构方式， 分子电路利用一体化分子技术与集 成技术相结合使体积小得出奇、 损耗微乎其微、 功能 具有超大能力、 稳定、 可靠性极高、 抗干扰能力极强、 成本低的特点。 可广泛应用于水、 陆、 空领域中工业 生产、 农业生产、 国防建设、 日常生活等各行业各种 应用领域中应用。 The third generation of electrical and electronic devices is a small-scale, large-scale, ultra-large-scale integrated circuit with a certain function, which uses transistors on a semiconductor substrate to make transistors, and resistors and capacitors are formed by internal connections. It has the characteristics of high integration, small size, low power consumption, good consistency, low cost, stability, and good reliability. Therefore, integrated circuits are widely used in electrical and electronic equipment to replace transistors. However, in electrical and electronic equipment using integrated circuits, integrated circuits and peripheral circuits such as corresponding resistors and capacitors, substrates (printed circuit boards), and electronic circuit loads are composed of traditional electrical technology using analog and digital technologies. Micropower integration exists. Power integration, mid-power integration, high-power integration, ultra-high-power integration of small-scale, large-scale, and ultra-large-scale integrated circuits. A single integrated circuit can only complete unit-scale functions, resulting in higher cost, structure, and process. Complex, tedious and other shortcomings. The purpose of the present invention is to design an integrated molecular technology, electronic device, molecular integrated circuit, and molecular electrical appliance. The molecular integrated circuit and molecular electrical appliance completely change the structure of the electronic tube electronic circuit and the electronic circuit structure of the transistor used in electrical products of the electrical and electronic industries. Electrical products, integrated circuit structure electrical products traditional technology structure method and the use of analog technology, digital technology traditional electrical technology method, the realization of the electronic tube, transistor, integrated circuit structure electrical products traditional technology structure method and the use of analog technology, digital technology traditional electrical technology method Unachievable technical characteristics and technical effects, which can replace the traditional electronic structure of electronic tubes, electronic products of transistor electronic circuit structure, electrical products of integrated circuit structure and electrical products used in modern domestic and foreign electrical and electronic industries. Technology, digital technology, traditional electrical technology, electrical products. The use of molecular technology to form unlimited development space and unrestricted field technology will be used in the electrical and electronic industry electrical products to apply various micropower, low power, medium power, high power, ultra high power electrical, electronic devices and various applications with functional properties and circuits. The molecular circuit structure of the integrated molecular technology free of peripheral circuits. The molecular circuit uses integrated molecular technology and integrated technology to make it surprisingly small in size, with minimal losses, super functional capabilities, stability, high reliability, strong anti-interference ability, and cost. Low characteristics. It can be widely used in various applications in various industries such as industrial production, agricultural production, national defense construction, daily life in the water, land and air fields.
本发明创造的技术方案是， 利用分子技术就是以 The technical solution created by the present invention is that the use of molecular technology is to
1 / 1 0000 (微米） 即埃的标准量化原理， 基本电路构 成处理系统由 Ρ/ΝΜΐε和 Ν/ΡΜΙ (；两大类的半导体器件、 电阻、 电容、 电感等电子器件、 导体器件、 绝缘体器 件运用复合互补形式构成各种功能处理系统， 将这些 基本电路加以各种信号及电路变换和组合可以构成 各式各样专门用途的分子集成电路分子电器。 1/1 0000 (micron) is the standard quantization principle of Angstrom, the basic circuit structure The processing system consists of P / N Μΐε and Ν / ΡΜΙ (the two major types of semiconductor devices, resistors, capacitors, inductors and other electronic devices, conductor devices, and insulator devices use composite complementary forms to form various functional processing systems. These basic Various signals and circuit transformations and combinations of circuits can constitute a variety of molecular integrated circuits and molecular electrical appliances for special purposes.
附图 1 为分子集成电路分子电器 P/NMie分子电路 结构图。 FIG. 1 is a molecular circuit structure diagram of a molecular integrated circuit, a molecular electrical device, and a P / N Mie molecular circuit.
附图 2 为分子集成电路分子电器 N/PMie 分子电 路结构图。 Figure 2 is a molecular circuit structure diagram of the molecular integrated circuit molecular electrical appliance N / P Mie .
附图 3 为分子集成电路分子电器 P/N„e分子电 路内部电路结构图。  Figure 3 is a structural diagram of the internal circuit of a molecular integrated circuit molecular electrical appliance P / N „e molecular circuit.
附图 4 为分子集成电路分子电器 N/PMl 分子电 路内部电路结构图。 FIG. 4 is a structural diagram of an internal circuit of a molecular integrated circuit molecular electrical appliance N / P M1 molecular circuit.
以下结合附图及实施例做出进一步说明。  Further description is made below with reference to the drawings and embodiments.
分子集成电路分子电器分子电路由分子控制 电 阻 MR， 分子控制器 Me， 分子功率器 MP， 电阻、 电容、 电感等电子器件加以各种信号和 电路变换组合构成 各种应用功能处理系统。 Molecular integrated circuits, molecular electrical circuits, and molecular circuits are composed of molecular control resistors M R , molecular controllers M e , molecular power devices M P , resistors, capacitors, inductors and other electronic devices combined with various signals and circuit transformations to form various application function processing systems.
由 图 1可知， P/NM1C电路由 PinP为分子控制点， N。ut 为分子功率点。 分子电路由 R为整个分子电路分子控制 电阻， ？ 是？型半导体管为整个分子电路分子控制器， N。ut是 N型半导体管为整个分子电路分子功率器。 It can be seen from FIG. 1 that the P / N M1C circuit uses P inP as a molecular control point, N. ut is the molecular power point. The molecular circuit is controlled by R for the entire molecular circuit molecule. Yes? Type semiconductor tube is the molecular controller for the entire molecular circuit, N. Ut is an N-type semiconductor tube as a molecular power device for the entire molecular circuit.
卩/！^^^分子电路中采用 P型半导体器件和 N型半导 体器件运用互补复合方式构成， 由电阻 R为整个分子电 路的分子控制电阻 MR， 分子控制电阻 MR控制于 P型半 导体器件的电源输入端 （如发射极或源极）， 它形成整 个分子电路的分子控制点， 分子控制电阻 MR和 P型半 导体器件构成整个分子电路的分子输入电路和分子控 制器 Mc,它完成整个分子电路控制处理功能。 P型半导 体器件的 （如集电极或漏极） 输出直接耦合至 N型半导 体器件的输入端 （如基极或栅极）， 它形成了整个分子 电路的分子功率点， N型半导体器件构成整个分子电路 分子输出电路和分子功率器 MP， 它完成了整个分子电 路分子功率处理功能。 卩 /! ^^^ In the molecular circuit, a P-type semiconductor device and an N-type semiconductor device are constructed using complementary compounding. The resistance R is the molecular control resistance M R of the entire molecular circuit, and the molecular control resistance M R is controlled by the P-type half. The power input terminal (such as the emitter or source) of the conductor device forms the molecular control point of the entire molecular circuit. The molecular control resistor M R and the P-type semiconductor device constitute the molecular input circuit and the molecular controller M c of the entire molecular circuit. It completes the entire molecular circuit control processing function. The output of a P-type semiconductor device (such as a collector or a drain) is directly coupled to the input of an N-type semiconductor device (such as a base or a gate). It forms the molecular power point of the entire molecular circuit. The N-type semiconductor device constitutes the entire molecular circuit elements, and an output circuit molecular dynamometer M P, molecules which completed the processing circuit power molecule.
由图 2 可知， N/PM,e 电路由 Ninp为分子控制点，It can be seen from Figure 2 that the N / P M , e circuit has N inp as the molecular control point.
P„ut为分子功率点。 分子电路由 R 为整个分子电路分 子控制电阻， ^是 N 型半导体管为整个分子电路分 子控制器， P。ut是 P 型半导体管为整个分子电路分子 功率器。 P „ ut is the molecular power point. The molecular circuit is controlled by R for the entire molecular circuit molecule control resistor, ^ is an N-type semiconductor tube for the molecular controller of the entire molecular circuit, and P. ut is a P-type semiconductor tube for the molecular power of the entire molecular circuit.
N/PMIC：分子电路中采用 N型半导体器件和 P型半导 体器件运用互补复合方式构成， 由电阻 R为整个分子电 路分子控制电阻 MR， 分子控制电阻 ]^ 控制于 N型半导 体器件的电源输出端 （如发射极或源极）， 它形成整个 分子电路的控制点， 分子控制电阻 1^1和 N型半导体器 件构成整个分子 电路的分子输入电路和分子控制器 Uc, 它完成整个分子电路分子控制处理功能。 N型半 导体器的 （如集电极或漏极） 输入直接耦合到 P型半导 体器件的输出端 （如基极或栅极）， 它形成整个分 '子电 路的分子功率点， P型半导体器件构成整个分子电路分 子输出 电路和分子功率器 MP， 它完成了整个分子电路 分子功率处理功能。 N / P MIC : The N-type semiconductor device and the P-type semiconductor device are used in the molecular circuit to form a complementary compound. The resistance R is the molecular control resistance M R for the entire molecular circuit. The molecular control resistance is controlled by the power source of the N-type semiconductor device. The output (such as the emitter or source) forms the control point of the entire molecular circuit. The molecular control resistor 1 ^ 1 and the N-type semiconductor device constitute the molecular input circuit and molecular controller Uc of the entire molecular circuit, which completes the entire molecular circuit. Molecular control processing functions. The input of the N-type semiconductor device (such as the collector or the drain) is directly coupled to the output terminal (such as the base or the gate) of the P-type semiconductor device, which forms the molecular power point of the entire sub-circuit. The P-type semiconductor device constitutes molecular entire molecule circuit output circuitry and molecular dynamometer M P, molecules which completed the circuit Molecular power processing function.
其工作过程是， 闭合开关 K而接通电源， 则分子 集成电路分子电器完成 （达到） 电器产品特定性能功 能处理。  The working process is that when the switch K is closed and the power is turned on, the molecular integrated circuit and the molecular electrical device complete (reach) the specific performance function processing of the electrical product.
分子集成电路分子电器分子电路的分子控制电 阻 M R， 分子控制器 Mt， 分子功率器 M P电气原理和电 气功能。 Molecular Molecular Molecular integrated circuit electrical control circuit of the resistor elements M R, the controller molecule M t, M P molecule is an electrical schematic of power and electrical functions.
由图 3 可知， P / N M 1 C分子电路分子控制电阻 ， 分子控制器 M «；， 分子功率器 M P电气原理和电气功能。 Seen from FIG. 3, P / N M 1 C molecule control resistor circuit molecules, molecules controller M «;, M P molecule is an electrical schematic of power and electrical functions.
电源 Vc c分子直流电输入后分成两路电路途径，一 路电路经过 R电阻进行对整个分子电路进行分子控制 构成分子控制电阻 ^^其输出到 Mc分子控制器的稳恒 器件 D和 P型半导体器件的电源输入端 （如发射极或源 极） 后， 一部分由分子控制器的输出端 （如集电极或 漏极） 输出直接耦合输入至 MP分子功率器的 N型半导 体器件的输入端 （如基极或栅极） 和其分子功率器的 输入端（如基极或栅极）控制电阻 R回到电源 GND负极， 一部分由 Mc分子控制器的输出端 （如基极或栅极） 输 出经过控制电阻 R回到电源 GND负极， 电路构成整个分 子电路稳恒电路和分压分流式电压电流负反馈的分子 控制器电路。 另一路电路经过 MP分子功率器 N型半导 体器件的输入端 （如集电极或漏极） 与反峰、 反通保 护器件 D和分子功率器负载 1^回到电源 GND负极， 电路构成整个分子电路反峰反通保护电路和分子功率 电器的分子功率器电路。 A/M或 D/M工作信号 由分子控制器 MC的 P型半导体 器件的输出端 （如基极或栅极） 输入构成整个分子输 入电路 PINP。 The power V cc molecular direct current is divided into two circuit paths. One circuit passes R resistors to perform molecular control of the entire molecular circuit to form a molecular control resistor ^^ which is output to the stable devices D and P type semiconductor devices of the M c molecular controller. Part of the output terminal of the molecular controller (such as collector or drain) is directly coupled to the input terminal of the N-type semiconductor device of the MP molecular power device (such as input base or gate) of the power devices and other molecules (e.g., base or gate) control resistor R back to the negative power source GND, a portion of the molecules M c controller output terminal (e.g., base or gate) of the output After returning to the negative electrode of the power source GND through the control resistor R, the circuit constitutes a stable circuit of the entire molecular circuit and a molecular controller circuit of voltage and current negative feedback. The other circuit passes the input terminal of the N-type semiconductor device of the MP molecular power device (such as the collector or the drain) and the anti-peak, the anti-pass protection device D, and the molecular power device load 1 ^ back to the power source GND negative electrode, the circuit constitutes the entire molecule Circuit anti-peak anti-pass protection circuit and molecular power device circuit of molecular power appliances. A / M or D / M operating signal from the controller output end of the molecule M C P-type semiconductor device (e.g., base or gate) of the whole molecule constituting an input circuit input P INP.
A/M或 D/M工作信号 由分子控制器 MC的 P型半导 体器件的输出端 （如集电极或漏极） 输出直接耦合输 入至分子功率器 MP的 N型半导体器件的输入端 （如基 极或栅极），经分子功率器 MP功能处理构成分子输出 电 路 NOUT。 A / M or D / M operating signal output from an output terminal of the P-type semiconductor device controller M C molecule (e.g., a collector or drain) coupled directly to the input of the molecule P M is a power input terminal of the N-type semiconductor device ( The base or gate), dried over molecular function processing power devices M P molecules constituting the output circuit N OUT.
由图 4可知， N/P、n ;分子电路分子控制电阻 MR， 分子控制器 ， 分子功率器 电气原理和电气功能。 As can be seen from FIG. 4, N / P, n; molecular circuit molecular control resistance M R , molecular controller, molecular power device electrical principle and electrical function.
电源 VCC分子直流电输入后分成两路电路途径， 一 路电路经过 R电阻进行对整个分子电路进行分子控制 构成分子控制电阻！^！^其输入由 MC分子控制器的稳恒 器件 D和 N型半导体器件的输出端 （如发射极或源极） 输入， 一部分由分子控制器 MC的输入端 （如集电极或 漏极） 输入直接耦合至 MP分子功率器 P型半导体器件 输出端 （如基极或栅极） 和其分子功率器的输出端 （如 基极或栅极） 控制电阻 R到电源正极 VCC， 一部分由 MC 分子控制器的输入端 （如基极或栅极） 输入经过控制 电阻到电源正极 VCC， 电路构成整个分子电路稳恒电路 和分压分流式电压电流负反馈的分子控制器电路。 另 一路电路经过 MP分子功率器 P型半导体器件的输出端 (如发射极或源极） 与反峰、 反通保护器件 D和分子功 率器负载 RL、 Rr回到电源负极 GND， 电路构成整个分 子电路反峰反通保护电路和分子功率电器的分子功率 器电路。 After the DC power of the power V CC molecule is input, it is divided into two circuit paths. One circuit passes the R resistor to perform molecular control on the entire molecular circuit to form a molecular control resistor! ^! ^ Input from the output of the device steady and N D M C-type semiconductor device controller molecule (e.g., a source or emitter) input, a part of the molecule M C input of the controller (e.g., a collector or drain) The input is directly coupled to the output terminal (such as the base or gate) of the P molecular power device P type semiconductor device and the output terminal (such as the base or gate) of the molecular power device. The control resistor R is connected to the positive electrode V CC of the power. The input terminal of the MC molecular controller (such as the base or the gate) is input to the positive electrode V CC of the power supply through a control resistor, and the circuit constitutes a stable circuit of the entire molecular circuit and a molecular controller circuit of voltage and current negative feedback. The other circuit passes the output terminal (such as the emitter or source) of the P molecular power device P-type semiconductor device and the anti-peak, anti-pass protection device D and the molecular power device load RL, R r back to the power supply negative electrode GND. The molecular power of the entire molecular circuit anti-peak and reverse protection circuit and molecular power appliances 器 电路。 Circuit.
A/M或 D/M工作信号由分子控制器 Mc的 N型半导体 器件的输入端 （如基极或栅极） 输入构成整个分子电 路输入电路 Ni n p。 The A / M or D / M working signal is input from the input terminal (such as the base or the gate) of the N-type semiconductor device of the molecular controller M c to form the entire molecular circuit input circuit N inp .
A/M或 D/M工作信号 由分子控制器 Mc的 N型半导 体器件的输入端 （如集电极或漏极） 输入直接耦合至 分子功率器 MP的 P型半导体器件的输出端 （如基 ·极或 栅极） 经分子功率器 MP功能处理构成分子输出 电路 A / M or D / M operating signal from the input terminal is directly coupled to the N-type semiconductor device controller M c molecule (e.g., a collector or drain) power is inputted to the molecule of the output terminal P M P type semiconductor device (e.g. Base electrode or grid) The molecular output circuit is processed by the M P function to form a molecular output circuit.

Claims

权 利 要 求 Rights request
1、 分子集成电路分子电器， 其特征是该分宁集 成电路分子电器利用分子技术就是以 1/10000(微米） 标准量化原理， 基本电路构成处理系统由 P/NMIC和 N/PM,e两大类组成。 1. Molecular integrated circuits and molecular electrical appliances, characterized in that the molecular electronics of the Fenning integrated circuit uses molecular technology to quantify the principle with a standard of 1/10000 (micron). The basic circuit constitutes a processing system consisting of P / N MIC and N / P M , e Composed of two major categories.
2、 根据权利要求 1所述的分子集成电路分子电器， 其特征是 P/NMie电路由 Pinp为分子控制点， N。ut为分子功 率点， 分子电路由 R为整个分子电路分子控制电阻， P 是 P型半导体管为整个分子电路分子控制器， N。ut是 N型 半导体管为整个分子电路分子功率器， P/NM1C分子电 路中采用 P型半导体器件和 N型半导体器件运用互补 复合方式构成， 由电阻 R为整个分子电路的分子控制电 阻 MR， 分子控制电阻 1^11控制于 P型半导体器件的 电源 输入端 （如发射极或源极）， 它形成整个分子电路的分 子控制点， 分子控制电阻 MR和 P型半导体器件构成整 个分子电路的分子输入电路和分子控制器 Mc， P型半 导体器件的 （如集电极或漏极） 输出直接耦合至 N型半 导体器件的输入端 （如基极或栅极）， 它形成了整个分 子电路的分子功率点， N型半导体器件构成整个分子电 路分子输出 电路和分子功率器 MP。 2. The molecular integrated circuit and molecular electrical appliance according to claim 1, wherein the P / N Mie circuit has P inp as a molecular control point, N. ut is the molecular power point, the molecular circuit is controlled by R for the molecular control of the entire molecular circuit, P is the P-type semiconductor tube as the molecular controller for the entire molecular circuit, N. ut is an N-type semiconductor tube as a molecular power device for the entire molecular circuit. The P / N M1C molecular circuit is composed of a P-type semiconductor device and an N-type semiconductor device in a complementary composite manner. The resistance R is the molecular control resistance M R of the entire molecular circuit. molecular control point, the molecule to control the resistance 1 ^ 11 controls the P-type semiconductor device of the power supply input (e.g., emitter or source electrode) which form the entire molecule circuit molecular control resistor M R and P-type semiconductor device comprising the entire molecule circuit molecules and molecular controller input circuit M c, P type semiconductor device (e.g., a collector or drain) is directly coupled to the input output N-type semiconductor device (e.g., base or gate), which forms the entire molecule circuit The molecular power point of the N-type semiconductor device constitutes the entire molecular circuit, the molecular output circuit, and the molecular power device M P.
3、 根据权利要求 1所述的分子集成电路分子电器， 其特征是 N/PMie 电路由 N 为分子控制点， P。ut为分子 功率点， 分子电路由 R为整个分子电路分子控制电阻， Ninp是 N型半导体管为整个分子电路分子控制器， P。ut 是 P型半导体管为整个分子电路分子功率器， N/PMIC 分子 电路中采用 N型半导体器件和 P型半导体器件运 用互补复合方式构成， 由 电阻 R为整个分子电路分子控 制电阻 MR， 分子控制电阻 MR控制于 N型半导体器件的 电源输出端 （如发射极或源极）， 它形成整个分子电路 的控制点， 分子控制电阻 1^!1和 N型半导体器件构成整 个分子电路的分子输入电路和分子控制器 Mc， N型半 导体器的 （如集电极或漏极） 输入直接耦合到 P型半导 体器件的输出端 （如基极或栅极）， 它形成整个分子电 路的分子功率点， P型半导体器件构成整个分子电路分 子输出 电路和分子功率器 MP。 3. The molecular integrated circuit and molecular electrical appliance according to claim 1, wherein the N / P Mie circuit has N as a molecular control point and P. ut is the molecular power point, the molecular circuit is controlled by R for the entire molecular circuit molecule, N inp is the N-type semiconductor tube for the molecular controller of the entire molecular circuit, P. ut is a P-type semiconductor tube for the entire molecular circuit molecular power device, N / P MIC The molecular circuit adopts N-type semiconductor device and P-type semiconductor device in a complementary and composite manner. The resistor R is the molecular control resistor M R for the entire molecular circuit. The molecular control resistor M R is controlled at the power output terminal of the N-type semiconductor device (such as a transmitter). Electrode or source electrode), which forms the control point of the entire molecular circuit. The molecular control resistor 1 ^ ! 1 and the N-type semiconductor device constitute the molecular input circuit and the molecular controller M c of the entire molecular circuit. (Electrode or drain) The input is directly coupled to the output end of the P-type semiconductor device (such as the base or gate), which forms the molecular power point of the entire molecular circuit. The P-type semiconductor device constitutes the entire molecular circuit. The molecular output circuit and the molecular power device M P.
PCT/CN2002/000208 2002-03-28 2002-03-28 Molecular integrated circuit molecular electronic devices WO2003083948A1 (en)

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Citations (4)

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WO1999057290A1 (en) * 1998-05-05 1999-11-11 Hsf Pharmaceuticals Sa Molecular regulatory circuits to achieve sustained activation of genes of interest by a single stress
US6294794B1 (en) * 1997-08-14 2001-09-25 Fujitsu Limited Non-linear optical device using quantum dots

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116782A (en) * 1988-12-26 1992-05-26 Hitachi, Ltd. Method and apparatus for processing a fine pattern
US5530263A (en) * 1994-08-16 1996-06-25 International Business Machines Corporation Three dot computing elements
US6294794B1 (en) * 1997-08-14 2001-09-25 Fujitsu Limited Non-linear optical device using quantum dots
WO1999057290A1 (en) * 1998-05-05 1999-11-11 Hsf Pharmaceuticals Sa Molecular regulatory circuits to achieve sustained activation of genes of interest by a single stress

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