WO2003075323A3 - Vorrichtung und verfahren zum anisotropen plasmaätzen eines substrates - Google Patents

Vorrichtung und verfahren zum anisotropen plasmaätzen eines substrates Download PDF

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Publication number
WO2003075323A3
WO2003075323A3 PCT/DE2003/000676 DE0300676W WO03075323A3 WO 2003075323 A3 WO2003075323 A3 WO 2003075323A3 DE 0300676 W DE0300676 W DE 0300676W WO 03075323 A3 WO03075323 A3 WO 03075323A3
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WO
WIPO (PCT)
Prior art keywords
sector
gas
substrate
reactive species
created
Prior art date
Application number
PCT/DE2003/000676
Other languages
English (en)
French (fr)
Other versions
WO2003075323A2 (de
Inventor
Franz Laermer
Klaus Breitschwerdt
Bernd Kutsch
Original Assignee
Bosch Gmbh Robert
Franz Laermer
Klaus Breitschwerdt
Bernd Kutsch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Franz Laermer, Klaus Breitschwerdt, Bernd Kutsch filed Critical Bosch Gmbh Robert
Priority to US10/506,457 priority Critical patent/US7285228B2/en
Priority to EP03722207A priority patent/EP1483780A2/de
Publication of WO2003075323A2 publication Critical patent/WO2003075323A2/de
Publication of WO2003075323A3 publication Critical patent/WO2003075323A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

Es wird ein Verfahren und eine zu dessen Durchführung geeignete Vorrichtung zum anisotropen Plasmaätzen eines Substrates (59), insbesondere eines Siliziumkörpers, vorgeschlagen. Die Vor­richtung weist eine Kammer (53) und eine Plasmaquelle zum Generieren eines hochfrequenten elektromagnetischen Wechselfeldes und einen Reaktionsbereich (20) zum Erzeugen eines Plas­mas mit reaktiven Spezies innerhalb der Kammer (53) auf, wobei die reaktiven Spezies durch Einwirken des Wechselfeldes auf ein Ätzgas und ein insbesondere gleichzeitig aber räumlich getrennt dazu eingebrachtes Passiviergas entstehen. Weiter ist ein Mittel (5, 62, 63) vorgesehen, mit dem in dem Reaktionsbereich (20) mindestens eine erste, mit dem Ätzgas beaufschlagte Zone (23, 33, 43) und mindestens eine zweite, mit dem Passiviergas beaufschlagte Zone (22, 32, 42) definiert werden. Zudem weist die Vorrichtung einen dem Reaktionsbereich (20) nachge­ordneten Mischungsbereich (21) auf, mit dem in der ersten Zone (23, 33, 43) aus dem Ätzgas erzeugte reaktive Spezies und in der zweiten Zone (22, 32, 42) aus dem Passiviergas erzeugte reaktive Spezies vor einem Einwirken auf das Substrat (59) miteinander vermischt werden.
PCT/DE2003/000676 2002-03-05 2003-03-05 Vorrichtung und verfahren zum anisotropen plasmaätzen eines substrates WO2003075323A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/506,457 US7285228B2 (en) 2002-03-05 2003-03-05 Device and method for anisotropic plasma etching of a substrate, a silicon body in particular
EP03722207A EP1483780A2 (de) 2002-03-05 2003-03-05 Vorrichtung und verfahren zum anisotropen plasmaätzen eines substrates

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10209763A DE10209763A1 (de) 2002-03-05 2002-03-05 Vorrichtung und Verfahren zum anisotropen Plasmaätzen eines Substrates, insbesondere eines Siliziumkörpers
DE10209763.1 2002-03-05
DE10249350.2 2002-10-23
DE10249350A DE10249350A1 (de) 2002-03-05 2002-10-23 Vorrichtung und Verfahren zum anisotropen Plasmaätzen eines Substrates, insbesondere eines Siliziumkörpers

Publications (2)

Publication Number Publication Date
WO2003075323A2 WO2003075323A2 (de) 2003-09-12
WO2003075323A3 true WO2003075323A3 (de) 2004-07-15

Family

ID=27789732

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/000676 WO2003075323A2 (de) 2002-03-05 2003-03-05 Vorrichtung und verfahren zum anisotropen plasmaätzen eines substrates

Country Status (4)

Country Link
US (1) US7285228B2 (de)
EP (1) EP1483780A2 (de)
DE (2) DE10209763A1 (de)
WO (1) WO2003075323A2 (de)

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US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
GB0402131D0 (en) 2004-01-30 2004-03-03 Isis Innovation Delivery method
US7250373B2 (en) * 2004-08-27 2007-07-31 Applied Materials, Inc. Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate
JP5710267B2 (ja) * 2007-12-21 2015-04-30 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シリコン構造体の製造及びプロファイル制御を伴うシリコンディープエッチング
EP2231257A4 (de) 2007-12-24 2013-11-06 Univ Queensland Beschichtungsverfahren
WO2009097660A1 (en) * 2008-02-07 2009-08-13 The University Of Queensland Patch production
WO2009140735A1 (en) 2008-05-23 2009-11-26 The University Of Queensland Analyte detection by microneedle patch with analyte selective reagents.
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US9018098B2 (en) * 2008-10-23 2015-04-28 Lam Research Corporation Silicon etch with passivation using chemical vapor deposition
IT1393695B1 (it) * 2009-04-17 2012-05-08 Lpe Spa Camera di reazione di un reattore epitassiale e reattore che la utilizza
US8384183B2 (en) * 2010-02-19 2013-02-26 Allegro Microsystems, Inc. Integrated hall effect element having a germanium hall plate
US9943673B2 (en) 2010-07-14 2018-04-17 Vaxxas Pty Limited Patch applying apparatus
US8492260B2 (en) 2010-08-30 2013-07-23 Semionductor Components Industries, LLC Processes of forming an electronic device including a feature in a trench
WO2013053022A1 (en) 2011-10-12 2013-04-18 The University Of Queensland Delivery device
US9343528B2 (en) 2014-04-10 2016-05-17 Semiconductor Components Industries, Llc Process of forming an electronic device having a termination region including an insulating region
US9324784B2 (en) 2014-04-10 2016-04-26 Semiconductor Components Industries, Llc Electronic device having a termination region including an insulating region
US9711365B2 (en) 2014-05-02 2017-07-18 International Business Machines Corporation Etch rate enhancement for a silicon etch process through etch chamber pretreatment
CA2975275C (en) 2015-02-02 2023-08-29 Vaxxas Pty Limited Microprojection array applicator and method
WO2017045031A1 (en) 2015-09-18 2017-03-23 Vaxxas Pty Limited Microprojection arrays with microprojections having large surface area profiles
DE102016200506B4 (de) * 2016-01-17 2024-05-02 Robert Bosch Gmbh Ätzvorrichtung und Ätzverfahren
EP4306803A3 (de) 2017-03-31 2024-04-10 Vaxxas Pty Limited Vorrichtung und verfahren zur beschichtung von oberflächen
US11175128B2 (en) 2017-06-13 2021-11-16 Vaxxas Pty Limited Quality control of substrate coatings
AU2018309562A1 (en) 2017-08-04 2020-02-20 Vaxxas Pty Limited Compact high mechanical energy storage and low trigger force actuator for the delivery of microprojection array patches (MAP)
KR20210037318A (ko) 2019-09-27 2021-04-06 삼성전자주식회사 기판 처리 장치와 방법, 그 처리 방법을 이용한 반도체 소자 제조방법

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JPS63282275A (ja) * 1987-05-11 1988-11-18 Matsushita Electric Ind Co Ltd 薄膜製造装置
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
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GB2327382A (en) * 1997-06-16 1999-01-27 Trikon Equip Ltd Shower head for plasma etching and chemical or vapour deposition
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JP2000091320A (ja) * 1998-09-10 2000-03-31 Foi:Kk プラズマ処理装置
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Also Published As

Publication number Publication date
DE10249350A1 (de) 2004-05-06
US7285228B2 (en) 2007-10-23
US20050126710A1 (en) 2005-06-16
DE10209763A1 (de) 2003-10-02
EP1483780A2 (de) 2004-12-08
WO2003075323A2 (de) 2003-09-12

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