WO2003073509A1 - Bipolar transistor structure - Google Patents
Bipolar transistor structure Download PDFInfo
- Publication number
- WO2003073509A1 WO2003073509A1 PCT/IT2002/000123 IT0200123W WO03073509A1 WO 2003073509 A1 WO2003073509 A1 WO 2003073509A1 IT 0200123 W IT0200123 W IT 0200123W WO 03073509 A1 WO03073509 A1 WO 03073509A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transistor structure
- emitter
- base
- thyristor
- bipolar transistor
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
Definitions
- the present invention relates to an improved bipolar transistor structure. More particularly, the invention relates to a bipolar transistor structure having conventional base, collector and emitter terminals.
- the invention relates specifically, but not exclusively, to a bipolar transistor inserted into a bipolar transistors Darlington configuration and the following description is given with reference to this field of application with the only purpose to simplify its disclosure.
- These kind of small spark engines normally include an electronic starter using power transistors and, in the most occasions, power .transistors in a Darlington configuration.
- a transistor Darlington configuration includes a couple of bipolar transistors connected one to the other with a common collector terminal and with the base terminal of a first or driver transistor connected to the base terminal of a second transistor.
- bipolar power transistors are often used connected one to the other in a Darlington configuration.
- the technical problem of the present invention is that of providing a new bipolar transistor structure, inside a Darlington configuration if that is the case, such a structure having functional and structural features allowing to simplify the corresponding driving circuit or even to omit it.
- Such a transistor structure should be suitable for semiconductor ' integration by a simple manufacturing process at low costs. Disclosure of Invention
- the solution idea behind the invention is that of integrating on a same chip the power bipolar transistor and a Thyristor SCR device between the base terminal and the emitter terminal of said transistor.
- the driving circuit of the Darlington configuration is extremely simplified and a simple current pulse signal on the gate terminal of the Thyristor SCR device allows realising a short-circuit between the base and the emitter terminals of the power transistor thus turning off the power transistor itself or the Darlington configuration wherein it is inserted.
- a transistor of that kind is inside a Darlington configuration it's preferable to use an Emitter Switching .technology so that the base and emitter regions in the semiconductor chip are obtained by buried layers and corresponding sinker contact regions.
- the invention further relates to a manufacturing process of such a transistor structure as defined in claims 8 and following.
- - Figure 1 is a schematic view of a Darlington transistors structure realised according to the present invention
- - Figure 2 shows a schematic view in a vertical cross section and enlarged scale of an integrated semiconductor circuit portion including at least a transistor according to the scheme of Figure 1;
- Figures 3 and 4 show respective schematic views in vertical cross section and enlarged scale of a semiconductor material portion that is subjected to the process phase according to the present invention for manufacturing an integrated transistors structure as shown in Figure 2;
- the Darlington structure 1 comprises a first driver transistor Tl, of the NPN type, having conventional terminals: a base Bl terminal, a collector Cl terminal and an emitter El terminal.
- the transistor Tl is a power transistor for application with high currents and voltages.
- the Darlington structure 1 comprises a second power transistor T2, of the NPN type, having conventional terminals: a base B2 terminal, a collector C2 terminal a d an emitter E2 terminal.
- this second transistor T2 is a bipolar power transistor.
- the two transistors Tl and T2 are connected one to the other with the emitter El of the first transistor Tl connected to the base B2 of the second transistor T2 and with common collectors Cl and C2 terminals.
- the common collectors Cl and C2 correspond to the collector terminal C of the whole structure;
- the base Bl of the first transistor Tl is the base terminal B of the whole structure while the emitter terminal E2 of - the second transistor is the emitter of the whole structure 1.
- the terminal B, C and E correspond to the terminal of a single bipolar transistor and the whole portion included inside the dotted line may be considered a single power transistor.
- the collector terminal C is normally coupled to a voltage supply reference.
- a resistance R is connected between the collector terminal C and the base terminal B of the Darlington structure 1 ; the resistance R is integrated in the same chip.
- the resistance R is a high voltage type, that is to say it is suitable to withstand high voltage values between its terminals. This resistance may be integrated according to what disclosed in the US patent No. 5,053,743.
- an electronic device 3 a SCR thyristor device, is connected between the base B and the emitter E of the Darlington structure 1.
- the thyristor device 3 is realised in a four-layer PNPN structur ,. that will be disclosed after.
- the Darlington structure 1, the resistance R and the SCR thyristor device 3 are integrated into the same semiconductor material portion and form a monolithic integrated circuit.
- the structure 1 may be manufactured even with an Emitter Switching (E.S) technology.
- E.S Emitter Switching
- both the emitter E and the base B are realised with buried layers and contact sinker wells, as shown in figure 2.
- the Darlington structure 1 may be considered integrating also the driving circuit.
- the driving circuit of the Darlington configuration is so simplified if compared to know " solutions that with a simple pulse signal on the gate terminal of the thyristor 3 SCR it's possible to establish a short circuit between the base B and the emitter E thus turning off the Darlington configuration.
- a very simple circuit is required to apply the more suitable current pulse to the gate terminal of the thyristor.
- the figures that represent cross sections of integrated circuit portions during its manufacturing process are not reproduced in scale but are reproduced to show the most important features of the invention.
- the inventive process initially provides for a diffusion step.
- the doping phases and the kind of the diffused regions are always disclosed just as a indicative and non-limitative example since they may be implemented in a dual manner.
- This layer 5 has an N- type doping and a resistivity and thickness corresponding to the voltage level that the structure 1 may stand as a whole.
- This epitaxial layer 5 may or may not contain an optional energy layer.
- a first buried layer 6 (P-BL) is then realised to form the base B of the first transistor Tl and so of the Darlington structure 1.
- a thermal oxide layer is formed on the surface; an aperture is defined through this oxide layer to realise, by a photolithography technique, a second buried layer 7 (N-BL) allowing to obtain the emitter E2 of the second transistor T2 of the Darlington structure 1.
- a second " epitaxial layer 8 is grown having the same resistivity type of the first epitaxial layer 5 but with a thickness of few micron, for instance 4-6 micron, as schematically shown in figure 3.
- the process is carried on with a diffusion phase of so-called sinker wells 9, 10, of the P and N type respectively, which are obtained inside the second epitaxial layer 8 and are provided to contact the corresponding base and emitter regions, that is the first 6 and the second buried layer 7.
- the sinker diffusion 9, of the P type, is also used to form the anode of the thyristor 3 SCR.
- FIG. 4 Obviously, at one side of figure 4 there are the first and the second transistors Tl, T2 of the Darlington configuration.
- the other figures 5 and 6 show an enlarged portion of the same semiconductor material allowing seeing even the Darlington structure.
- These layers 11, 12 are obtained by diffusion and are of a P and N+ type respectively. These layers 11, 12 are provided for the P body and N source regions of the thyristor in the Emitter Switching structure.
- the layers obtained at the end of this process step provide a PNPN four layers structure as clearly shown in figure 5. More particularly, the P layer 11 is the gate of the thyristor device 3 while the N+ layer 12 is its cathode.
- a gate contact 14 is provided over the P region 11 for the thyristor SCR that also correspond to the base B of the structure 1.
- the thyristor area so realised is suitably sized so that the direct voltage drop (Vf) on this component is minor than the voltage drop base-emitter (Vbe) of the structure 1. In this manner an efficient short circuit is realised between the base B and the emitter E.
- a second metallic layer 15 is provided to contact the anode of the thyristor 3 SCR and the base B of the Darlington structure 1 with the high voltage resistance R that is connected to the voltage supply reference.
- the improved Darlington structure according to the present invention do solves the technical problem and reached various advantages the first of which is given on the fact that, inside a single integrated power circuit, a simple and efficient driving circuit is obtained for the transistor or the transistors Darlington structure.
- the turning off speed is not very high but this is not a problem for the kind of applications wherein the Darlington structure is integrated.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IT2002/000123 WO2003073509A1 (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
AU2002241256A AU2002241256A1 (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
EP02707105A EP1479108A1 (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
CNB028283805A CN100390996C (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IT2002/000123 WO2003073509A1 (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003073509A1 true WO2003073509A1 (en) | 2003-09-04 |
Family
ID=27764146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IT2002/000123 WO2003073509A1 (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1479108A1 (en) |
CN (1) | CN100390996C (en) |
AU (1) | AU2002241256A1 (en) |
WO (1) | WO2003073509A1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725752A (en) * | 1970-10-06 | 1973-04-03 | Westinghouse Brake & Signal | Semiconductor device |
US4032958A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
US4142115A (en) * | 1975-12-12 | 1979-02-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a thermal protective device |
EP0560185A1 (en) * | 1992-03-07 | 1993-09-15 | TEMIC TELEFUNKEN microelectronic GmbH | Power voltage limiting circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2030765B (en) * | 1978-10-02 | 1983-04-27 | Lumenition Ltd | Darlington transistor pairs |
DE3123667C2 (en) * | 1981-06-15 | 1985-04-18 | Robert Bosch Gmbh, 7000 Stuttgart | Darlington transistor circuit |
FR2646019B1 (en) * | 1989-04-14 | 1991-07-19 | Sgs Thomson Microelectronics | HIGH VOLTAGE SPIRAL RESISTANCE |
-
2002
- 2002-02-28 AU AU2002241256A patent/AU2002241256A1/en not_active Abandoned
- 2002-02-28 CN CNB028283805A patent/CN100390996C/en not_active Expired - Fee Related
- 2002-02-28 EP EP02707105A patent/EP1479108A1/en not_active Withdrawn
- 2002-02-28 WO PCT/IT2002/000123 patent/WO2003073509A1/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725752A (en) * | 1970-10-06 | 1973-04-03 | Westinghouse Brake & Signal | Semiconductor device |
US4032958A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
US4142115A (en) * | 1975-12-12 | 1979-02-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a thermal protective device |
EP0560185A1 (en) * | 1992-03-07 | 1993-09-15 | TEMIC TELEFUNKEN microelectronic GmbH | Power voltage limiting circuit |
Non-Patent Citations (1)
Title |
---|
PALARA S ET AL: "Modern electronic ignition in VIPower technology", POWER SEMICONDUCTOR DEVICES AND ICS, 1993. ISPSD '93., PROCEEDINGS OF THE 5TH INTERNATIONAL SYMPOSIUM ON MONTEREY, CA, USA 18-20 MAY 1993, NEW YORK, NY, USA,IEEE, US, 18 May 1993 (1993-05-18), pages 218 - 222, XP010116891, ISBN: 0-7803-1313-5 * |
Also Published As
Publication number | Publication date |
---|---|
AU2002241256A1 (en) | 2003-09-09 |
EP1479108A1 (en) | 2004-11-24 |
CN100390996C (en) | 2008-05-28 |
CN1623233A (en) | 2005-06-01 |
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