CN100390996C - Bipolar transistor structure - Google Patents
Bipolar transistor structure Download PDFInfo
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- CN100390996C CN100390996C CNB028283805A CN02828380A CN100390996C CN 100390996 C CN100390996 C CN 100390996C CN B028283805 A CNB028283805 A CN B028283805A CN 02828380 A CN02828380 A CN 02828380A CN 100390996 C CN100390996 C CN 100390996C
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- bipolar transistor
- transistor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
Abstract
The present invention relates to an improved bipolar transistor structure (1) of the type with traditional terminals of a base electrode (B), a collector (C) and an emitter (E), and the improved bipolar transistor structure (1) can be integrated into a Darlington structure. The improved bipolar transistor structure (1) comprises a resistor (R) between the collector (C) and the base electrode (B), and a thyristor device (3) SCR between the base electrode (B) and the emitter (E), wherein the resistor (R) is a high-voltage resistor which makes the transistor structure maintain constant conduction; a current pulse signal is exerted on a grid electrode terminal of a thyristor, and a driving circuit can be used for a cut-off stage.
Description
Technical field
The present invention relates to a kind of improved bipolar transistor structure and manufacture method thereof.
More specifically, the present invention relates to a kind of bipolar transistor structure and manufacture method thereof with conventional base, collector and emitter terminal.
But The present invention be more particularly directed to be not exclusively involved in the bipolar transistor in the darlington structure that is inserted in bipolar transistor, and provide following description with reference to this application, only open in order to simplify it.
Background technology
As known in this particular technology area, use in many application of sparklet engine at needs, for example in the instrument of little engine operation, exists stronger needs guarantee instrument in addition extremely operate and/or environmental condition under working.
Can the reference driving force cutter, power saw or power blade etc., that is, and all instruments of operating by the sparklet engine that must operate under the extreme or meritorious condition.
Usually, the sparklet engine of these kinds comprises the electronic starter that utilizes power transistor, and in most of the cases, the power transistor of darlington structure.
Such as known for the skilled artisan, transistorized darlington structure comprises two bipolar transistors that are connected with each other, and has public collector terminal, and first or the base terminal of driving transistors link to each other with the base terminal of transistor seconds.
For many years used this structure, and this structure is known in the literature.
Formerly in the application of being quoted from, in darlington structure, bipolar power transistor often adjacently uses.
Even have advantage on many viewpoints, and satisfy the demand in fact, but said structure has caused some driving problems, mainly is during the stage.
In fact, actual known technology has proposed to come the darlington structure of driving needle to power application by the respective drive circuit with complicated and expensive structure, and this can not cause the interest of manufacturer, and this is owing to do not have actual market for extensive integrated.
Technical problem of the present invention is: in this case, and new bipolar transistor structure is provided in darlington structure, and such structure has can be simplified the corresponding driving circuit or even omit the function and the architectural feature of drive circuit.
It is integrated that such transistor arrangement should be adapted to pass through the semiconductor that simple fabrication process carries out with low cost.
Summary of the invention
The thought of the present invention's solution behind is: on identical chip, and integrated power bipolar transistor and the thyristor SCR device between described transistorized base stage and emitter terminal.
In this manner, the drive circuit of darlington structure has obtained extremely simplifying, and the simple current pulse signal on the gate terminal of thyristor SCR device allows to realize the base stage of power transistor and the short circuit between the emitter terminal, thereby by power transistor self or be inserted into wherein darlington structure.
Advantageously, when this transistorlike is in the darlington structure, preferably use the emitter switch technology, thereby, obtain base stage and emitter region in the semiconductor chip by buried regions and corresponding heavy contact region.
According to the thought of above-mentioned solution, solve this technical problem by following defined bipolar transistor structure.A kind of bipolar transistor structure, described bipolar transistor structure with type of traditional base stage, collector and emitter terminal be the Darlington type and comprise: first driving transistors of NPN type has traditional base stage, collector and emitter terminal; And second power transistor of NPN type, have traditional base stage, collector and emitter terminal; Described first and second transistors are connected with each other, and the emitter terminal of described the first transistor links to each other with the base terminal of described transistor seconds, and have public collector terminal; Described public collector terminal is corresponding to the described collector terminal of described bipolar transistor structure, the described base terminal of described the first transistor is corresponding to the described base terminal of described bipolar transistor structure, and the described emitter terminal of described transistor seconds is corresponding to the described emitter terminal of described bipolar transistor structure.Described bipolar transistor structure also comprises: be connected the described base stage of described bipolar transistor structure and the thyristor device SCR between the emitter terminal; And be connected the described collector electrode of described bipolar transistor structure and the high voltage resistance between the base terminal, and described bipolar transistor structure, described high voltage resistance and described thyristor device SCR be integrated in the identical semi-conducting material part, and form monolithic integrated circuit.
The invention still further relates to the manufacturing process of following defined this transistor arrangement.A kind of manufacture method of integrated bipolar transistor structure, described integrated bipolar transistor structure be the Darlington type and comprise: first driving transistors of NPN type and second power transistor of NPN type, described first and second transistors are connected with each other, the emitter terminal of described the first transistor links to each other with the base terminal of described transistor seconds, and has public collector terminal, described public collector terminal is corresponding to the collector terminal of described bipolar transistor structure, the base terminal of described the first transistor is corresponding to the base terminal of described bipolar transistor structure, and the emitter terminal of described transistor seconds is corresponding to the emitter terminal of described bipolar transistor structure; Be connected the described base stage of described bipolar transistor structure and the thyristor device SCR between the emitter terminal; And be connected the described collector electrode of described bipolar transistor structure and the high voltage resistance between the base terminal.Described manufacture method is characterised in that: carry out the following stage having on the Semiconductor substrate of corresponding epitaxial loayer: be formed for realizing the corresponding base stage of described bipolar transistor structure and first buried regions and second buried regions of emitter, described second buried regions and described first buried regions are overlapping; Above described first and second buried regions, form second epitaxial loayer; Form corresponding heavy zone by described second epitaxial loayer, so that contact with described first and second buried regions independently, one of described zone is the anode of described thyristor device SCR.
With reference to the accompanying drawings, according to the description of following given indicative and indefiniteness example, the feature and advantage of transistor and corresponding manufacturing process will be apparent.
Description of drawings
The schematic diagram of the Darlington transistor structure that Fig. 1 is according to the present invention to be realized;
Fig. 2 show the transistor shown in the schematic diagram that comprises Fig. 1 at least integrated semiconductor circuit part vertical cross-section and amplified the schematic diagram of ratio;
Fig. 3 and 4 show by the treatment in accordance with the present invention stage make integrated transistor structure as shown in Figure 2 semi-conducting material part vertical cross-section and amplified the corresponding schematic diagram of ratio;
Fig. 5 and 6 shows by according to the vertical cross-section of the semi-conducting material part of the expansion other processing stage the of the present invention and amplified the corresponding schematic diagram of ratio.
Embodiment
With reference to the accompanying drawings, more specifically, with reference to the example of figure 1, Fig. 1 overall situation and schematically show the bipolar transistor structure of after this utilization realize disclosed manufacturing process according to the present invention darlington structure.
As discussed previously, structure 1 is only come open as the example of indicative and indefiniteness, shows the application of the power transistor that utilizes this new kind that the present invention obtains.Use the transistor of the present invention of darlington structure can be suitable for obtaining higher gain; Yet principle of the present invention can be applied to the transistor of single darlington structure.
Darlington structure 1 comprises the first driving transistors T1 of NPN type, has traditional terminal: base stage B1 terminal, collector electrode C1 terminal and emitter E 1 terminal.
Preferably, transistor T 1 is the power transistor that applies with high electric current and voltage.
Darlington structure 1 comprises the second power transistor T2 of NPN type, has traditional terminal: base stage B2 terminal, collector electrode C2 terminal and emitter E 2 terminals.
Even this transistor seconds T2 is a bipolar power transistor.
In darlington structure 1, two transistor Ts 1 and T2 are connected with each other, and the emitter E 1 of the first transistor T1 links to each other with the base stage B2 of transistor seconds T2, and has public collector electrode C1 and C2 terminal.
Thus, if should regard darlington structure 1 as single electronic equipment, common collector C1 and C2 are corresponding to the collector terminal C of total; The base stage B1 of the first transistor T1 is the base terminal B of total, and simultaneously, the emitter terminal E2 of transistor seconds is the emitter of total 1.
See Fig. 1, can recognize that terminal B, C and E are corresponding to the terminal of single bipolar transistor, and the entire portion that is included in the dotted line can be counted as single power transistor.
Collector terminal C links to each other with voltage source reference usually.
Advantageously, according to the present invention, resistance R is connected between the collector terminal C and base terminal B of darlington structure 1; Resistance R is integrated in the identical chip.
In this manner, the DC driven electric current can be provided, so that be forced to normally on the base stage B of darlington structure 1.
Preferably, resistance R is a high voltage type, that is, it is suitable for bearing the high-voltage value between its terminal.According at US patent No.5, disclosed content in 053,743 can integrated this resistance.
And always according to the present invention, electronic device 3---SCR thyristor device is connected between the base stage B and emitter E of darlington structure 1.
Realize thyristors 3 according to four layers of PNPN structure, will after disclose.
Darlington structure 1, resistance R and SCR thyristor device 3 are integrated in the identical semi-conducting material part, and form monolithic integrated circuit.
In addition, even utilize emitter switch (E.S) technology also can manufacturing structure 1.For example, utilize this technology, as shown in Figure 2, utilize buried regions and contact heavy trap and realize emitter E and base stage B.
In the prototype structure of emitter switch device, owing to, exist in unshowned other layers among Fig. 2 as the traditional structure that forms thyristor device SCR.
Can think according to darlington structure of the present invention 1 also integrated drive circuit.In other words, if compare, the drive circuit of darlington structure is simplified, thereby utilized simple pulse signal on the gate terminal of thyristor 3 SCR with known solutions, can set up the short circuit between base stage B and the emitter E, thereby darlington structure is ended.Need very simple circuit that more suitable current impulse is applied on the gate terminal of thyristor.
Now, particularly, will disclose various manufacturing treatment steps, be used for realizing according to structure 1 of the present invention referring to figs. 3 to 6 example, for example, as shown in Figure 1.
After this processing stage of disclosed and structure be not formed for making the complete handling process of integrated circuit, this is owing to can reduce the present invention, so that the actual manufacturing technology of using is implemented in the IC field; Therefore, only disclose here to realize the present invention comparatively useful the processing stage.
Show the accompanying drawing and the reproduction not in scale of making the integrated circuit cross section partly of processing apparatus at it, but it is reproduced so that it shows most important characteristic of the present invention.
Processing of the present invention offers diffusing step at first.Because it can realize according to double-mode, therefore, disclose the kind of doping stage and diffusion zone all the time, and be indicative and indefiniteness.
From the substrate 4 that the N+ with low-down resistivity mixes, grown epitaxial layer 5.Corresponding resistivity of voltage level and thickness that this layer 5 has the doping of N-type and can bear with this structure 1 as a whole.
This epitaxial loayer 5 can comprise or can not comprise optional energy layer.
Then, realize first buried regions 6 (P-BL),, formed the base stage B of darlington structure 1 thus to form the base stage B of the first transistor T1.
After the injection and diffusing step of buried regions 6, formed thermal oxide layer from the teeth outwards; Defined the hole by this oxide layer,, can obtain the emitter E 2 of the transistor seconds T2 of darlington structure 1 so that realize second buried regions 7 (N-BL) by photoetching technique.
After having removed surface oxide layer fully, second epitaxial loayer 8 of growing has the resistivity type identical with first epitaxial loayer 5, but has several microns thickness, and 4-6 micron for example is as schematically illustrating among Fig. 3.
Utilize the diffusion phase of the heavy trap 9,10 of what is called of P and N type to carry out this processing respectively, described heavy trap obtains in second epitaxial loayer 8, and it is set, so as with corresponding base stage and emitter region, promptly first buried regions 6 and second buried regions 7 contact.
The heavy diffusion 9 of P type also is used to form the anode of thyristor 3SCR.
Can recognize that in Fig. 4, second buried regions stops at and approaches heavy regional 9 places.
Structure shown in Figure 4 must be considered to the simplification part of total 1, so that attentiveness is placed on the significant semiconductor portions of formation to device 3 SCR.
Significantly, in the side of Fig. 4, there be first and second transistor Ts 1, the T2 of darlington structure.Other Fig. 5 and 6 shows even can see the amplifier section of the same semiconductor material of darlington structure.
Then, in described second epitaxial loayer 8 inside, between heavy zone 9,10, realize other layer 11,12.
Obtain these layers 11,12 by diffusion, and these layers 11,12 are respectively P and N+ type.At the P body and the N source region of the thyristor of switch structure of emitter electrode, these layers 11,12 are set.
These layers that obtained when this treatment step finishes provide PNPN four-layer structure, as being clearly shown that among Fig. 5.
More specifically, P layer 11 is grids of thyristor device 3, and N+ layer 12 is its negative electrodes.
As recognizing from Fig. 5, the P dopant well has totally comprised the semiconductor regions that has wherein formed thyristor SCR.
This processing proceeds to traditional terminal stage, can define the hard contact in the various zones of before being realized.
After having finished DIFFUSION TREATMENT, growth thermal oxide layer 16, limiting hole in this oxide layer is to realize the contact.Fully, depositing metal layers 13 so that the heavy zone 10 of N+ layer 12 and emitter links to each other, thereby makes the negative electrode of thyristor SCR link to each other with the emitter E of structure 1, as shown in Figure 6.
In this identical Fig. 6, gate contacts 14 is arranged at also corresponding to 11 tops, P zone of the thyristor SCR of the base stage B of structure 1.
Also make the thyristor of such realization have suitable size, thereby the dc voltage drop on this assembly (Vf) is lower than the base-emitter voltage drop (Vbe) of structure 1.According to this mode, between base stage B and emitter E, realized effective short circuit.
Improvement darlington structure according to the present invention has solved technical problem, first advantage in the various advantages that reached is based on the following fact: in single integrated power circuit, at transistor or transistor darlington structure, obtained simple and effective drive circuit.
And the manufacturing process of this structure is simple especially and cheap.
Cut-off speed is not very high, and still, this is not a problem for the various application that wherein formed darlington structure.
Claims (9)
1. bipolar transistor structure (1) with type of traditional base stage (B), collector electrode (C) and emitter (E) terminal, described bipolar transistor structure (1) be the Darlington type and comprise:
First driving transistors (T1) of-NPN type has traditional base stage (B1), collector electrode (C1) and emitter (E1) terminal; And
Second power transistor (T2) of-NPN type has traditional base stage (B2), collector electrode (C2) and emitter (E2) terminal;
Described first and second transistors (T1 T2) is connected with each other, and the emitter terminal (E1) of described the first transistor (T1) links to each other with the base terminal (B2) of described transistor seconds (T2), and have public collector terminal (C1, C2);
Described public collector terminal (C1, C2) corresponding to the described collector terminal (C) of described bipolar transistor structure (1), the described base terminal (B1) of described the first transistor (T1) is corresponding to the described base terminal (B) of described bipolar transistor structure (1), and the described emitter terminal (E2) of described transistor seconds (T2) is corresponding to the described emitter terminal (E) of described bipolar transistor structure (1);
Described bipolar transistor structure (1) also comprises:
-be connected the described base stage (B) of described bipolar transistor structure (1) and thyristor device (3) SCR between emitter (E) terminal;
It is characterized in that also comprising:
-be connected the described collector electrode (C) of described bipolar transistor structure (1) and the high voltage resistance (R) between base stage (B) terminal,
And described bipolar transistor structure (1), described high voltage resistance (R) and described thyristor device (3) SCR be integrated in the identical semi-conducting material part, and form monolithic integrated circuit.
2. bipolar transistor structure according to claim 1 is characterized in that: the described collector terminal (C) of described bipolar transistor structure (1) links to each other with the supply voltage benchmark, so that described bipolar transistor structure (1) is remained on normally on.
3. bipolar transistor structure according to claim 1, it is characterized in that: according to the emitter switch technology, utilization is sunk regional (9,10) with contacting accordingly at the buried region of described base stage (B) and emitter (E) terminal, obtains described bipolar transistor structure.
4. bipolar transistor structure according to claim 1 is characterized in that: described thyristor device (3) SCR is the PNPN type with four layers of integrated morphology.
5. bipolar transistor structure according to claim 1 is characterized in that: described high voltage resistance (R) and described thyristor device (3) SCR form the drive circuit of described bipolar transistor structure (1).
6. bipolar transistor structure according to claim 5 is characterized in that: by apply current pulse signal on the gate terminal of described thyristor device (3), described drive circuit be can be used in by the stage.
7. the manufacture method of an integrated bipolar transistor structure (1), described integrated bipolar transistor structure (1) be the Darlington type and comprise: first driving transistors (T1) of NPN type and second power transistor (T2) of NPN type, the described first and second transistor (T1, T2) be connected with each other, the emitter terminal (E1) of described the first transistor (T1) links to each other with the base terminal (B2) of described transistor seconds (T2), and has public collector terminal (C1, C2), described public collector terminal (C1, C2) corresponding to the collector terminal (C) of described bipolar transistor structure (1), the base terminal (B1) of described the first transistor (T1) is corresponding to the base terminal (B) of described bipolar transistor structure (1), and the emitter terminal (E2) of described transistor seconds (T2) is corresponding to the emitter terminal (E) of described bipolar transistor structure (1); Be connected the described base stage (B) of described bipolar transistor structure (1) and thyristor device (3) SCR between emitter (E) terminal; And be connected the described collector electrode (C) of described bipolar transistor structure (1) and the high voltage resistance (R) between base stage (B) terminal,
Described manufacture method is characterised in that: carry out the following stage on the Semiconductor substrate with corresponding epitaxial loayer (5) (4):
-being formed for realizing the corresponding base stage (B) of described bipolar transistor structure (1) and first buried regions (6) and second buried regions (7) of emitter (E), described second buried regions (7) is overlapping with described first buried regions (6);
-form second epitaxial loayer (8) in described first and second buried regions (6,7) top;
-pass through described second epitaxial loayer (8) to form corresponding heavy zone (9,10), so that contact with described first and second buried regions (6,7) independently, one of described zone (9) are the anodes of described thyristor device (3) SCR.
8. method according to claim 7 is characterized in that: obtain described heavy zone (9,10) in the inside of described second epitaxial loayer (8), so that form area of grid (11) and the cathode zone (12) of described thyristor device (3) SCR.
9. method according to claim 8 is characterized in that: the described cathode zone (12) of described thyristor device (3) SCR links to each other with the heavy zone (10) of described emitter terminal (E) by metal layer (13).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IT2002/000123 WO2003073509A1 (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1623233A CN1623233A (en) | 2005-06-01 |
| CN100390996C true CN100390996C (en) | 2008-05-28 |
Family
ID=27764146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028283805A Expired - Fee Related CN100390996C (en) | 2002-02-28 | 2002-02-28 | Bipolar transistor structure |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1479108A1 (en) |
| CN (1) | CN100390996C (en) |
| AU (1) | AU2002241256A1 (en) |
| WO (1) | WO2003073509A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142115A (en) * | 1975-12-12 | 1979-02-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a thermal protective device |
| EP0009957A1 (en) * | 1978-10-02 | 1980-04-16 | Lumenition Limited | Four lead monolithic Darlington and opto-electronic ignition system incorporating it |
| WO1982004509A1 (en) * | 1981-06-15 | 1982-12-23 | Michel Hartmut | Darlington transistor circuit |
| US5053743A (en) * | 1989-04-14 | 1991-10-01 | Sgs-Thomson Microelectronics S.A. | High voltage spiral resistor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1303338A (en) * | 1970-10-06 | 1973-01-17 | ||
| US4032958A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
| DE4207349A1 (en) * | 1992-03-07 | 1993-09-09 | Telefunken Microelectron | POWER VOLTAGE LIMIT CIRCUIT |
-
2002
- 2002-02-28 WO PCT/IT2002/000123 patent/WO2003073509A1/en not_active Application Discontinuation
- 2002-02-28 AU AU2002241256A patent/AU2002241256A1/en not_active Abandoned
- 2002-02-28 EP EP02707105A patent/EP1479108A1/en not_active Withdrawn
- 2002-02-28 CN CNB028283805A patent/CN100390996C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142115A (en) * | 1975-12-12 | 1979-02-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a thermal protective device |
| EP0009957A1 (en) * | 1978-10-02 | 1980-04-16 | Lumenition Limited | Four lead monolithic Darlington and opto-electronic ignition system incorporating it |
| WO1982004509A1 (en) * | 1981-06-15 | 1982-12-23 | Michel Hartmut | Darlington transistor circuit |
| US5053743A (en) * | 1989-04-14 | 1991-10-01 | Sgs-Thomson Microelectronics S.A. | High voltage spiral resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1479108A1 (en) | 2004-11-24 |
| AU2002241256A1 (en) | 2003-09-09 |
| CN1623233A (en) | 2005-06-01 |
| WO2003073509A1 (en) | 2003-09-04 |
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