WO2003054926A3 - Appareil et procede d'integration d'une diode en parallele dans des cellules solaires - Google Patents

Appareil et procede d'integration d'une diode en parallele dans des cellules solaires Download PDF

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Publication number
WO2003054926A3
WO2003054926A3 PCT/US2002/034416 US0234416W WO03054926A3 WO 2003054926 A3 WO2003054926 A3 WO 2003054926A3 US 0234416 W US0234416 W US 0234416W WO 03054926 A3 WO03054926 A3 WO 03054926A3
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WO
WIPO (PCT)
Prior art keywords
bypass diode
solar cell
conduction layer
lateral conduction
solar cells
Prior art date
Application number
PCT/US2002/034416
Other languages
English (en)
Other versions
WO2003054926A2 (fr
Inventor
Paul R Sharps
Daniel J Aiken
Doug Collins
Mark A Stan
Original Assignee
Emcore Corp
Paul R Sharps
Daniel J Aiken
Doug Collins
Mark A Stan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/999,598 external-priority patent/US6680432B2/en
Application filed by Emcore Corp, Paul R Sharps, Daniel J Aiken, Doug Collins, Mark A Stan filed Critical Emcore Corp
Priority to DE10297371T priority Critical patent/DE10297371T5/de
Priority to JP2003555555A priority patent/JP4119844B2/ja
Priority to DE60229279T priority patent/DE60229279D1/de
Priority to AU2002365270A priority patent/AU2002365270A1/en
Priority to EP02805514A priority patent/EP1440480B1/fr
Publication of WO2003054926A2 publication Critical patent/WO2003054926A2/fr
Publication of WO2003054926A3 publication Critical patent/WO2003054926A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H01L31/06875—Multiple junction or tandem solar cells inverted grown metamorphic [IMM] multiple junction solar cells, e.g. III-V compounds inverted metamorphic multi-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une cellule solaire présentant une structure de cellule solaire à multiples raccordements avec une diode en parallèle. La diode en parallèle offre une protection de polarisation inverse pour la structure de cellule solaire à multiples raccordements. Dans un mode de réalisation, la structure de cellule solaire à multiples raccordements comprend un substrat, une cellule inférieure, une cellule intermédiaire, une cellule supérieure, une diode en parallèle, une couche conductrice latérale, et un circuit parallèle. La couche conductrice latérale est déposée sur la cellule supérieure. La diode en parallèle est déposée sur la couche conductrice latérale. Un côté du circuit parallèle est connecté au substrat et un autre côté du circuit parallèle est connecté à la couche conductrice latérale. Dans un autre mode de réalisation, la diode parallèle contient une couche i destinée à augmenter l'efficacité de la diode.
PCT/US2002/034416 2001-10-24 2002-10-24 Appareil et procede d'integration d'une diode en parallele dans des cellules solaires WO2003054926A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE10297371T DE10297371T5 (de) 2001-10-24 2002-10-24 Vorrichtung und Verfahren für eine integrale Bypassdiode in Solarzelle
JP2003555555A JP4119844B2 (ja) 2001-10-24 2002-10-24 太陽電池の一体型バイパスダイオードのための装置及び方法
DE60229279T DE60229279D1 (de) 2001-10-24 2002-10-24 Integrierte umleitungsdiode in solarzellen und herstellungsverfahren
AU2002365270A AU2002365270A1 (en) 2001-10-24 2002-10-24 An apparatus and method for integral bypass diode in solar cells
EP02805514A EP1440480B1 (fr) 2001-10-24 2002-10-24 Appareil et procede d'integration d'une diode en parallele dans des cellules solaires

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/999,598 US6680432B2 (en) 2001-10-24 2001-10-24 Apparatus and method for optimizing the efficiency of a bypass diode in multijunction solar cells
US09/999,598 2001-10-24
US99959802A 2002-10-24 2002-10-24

Publications (2)

Publication Number Publication Date
WO2003054926A2 WO2003054926A2 (fr) 2003-07-03
WO2003054926A3 true WO2003054926A3 (fr) 2004-03-25

Family

ID=31998271

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/034416 WO2003054926A2 (fr) 2001-10-24 2002-10-24 Appareil et procede d'integration d'une diode en parallele dans des cellules solaires

Country Status (1)

Country Link
WO (1) WO2003054926A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode
JPWO2006025260A1 (ja) * 2004-08-31 2008-05-08 国立大学法人京都大学 積層型有機無機複合高効率太陽電池
US9716196B2 (en) 2011-02-09 2017-07-25 Alta Devices, Inc. Self-bypass diode function for gallium arsenide photovoltaic devices
US11121272B2 (en) 2011-02-09 2021-09-14 Utica Leaseco, Llc Self-bypass diode function for gallium arsenide photovoltaic devices
CN112038419B (zh) * 2020-08-03 2022-04-12 上海空间电源研究所 一种兼具激光供能与太阳发电的光伏电池制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0971417A2 (fr) * 1998-06-11 2000-01-12 Canon Kabushiki Kaisha Elément photovoltaique et son procédé de fabrication
US6103970A (en) * 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
WO2001006565A1 (fr) * 1999-07-14 2001-01-25 Hughes Electronics Corporation Ensemble monolithique diode en parallele et pile solaire
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278054B1 (en) * 1998-05-28 2001-08-21 Tecstar Power Systems, Inc. Solar cell having an integral monolithically grown bypass diode
EP0971417A2 (fr) * 1998-06-11 2000-01-12 Canon Kabushiki Kaisha Elément photovoltaique et son procédé de fabrication
US6103970A (en) * 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
WO2001006565A1 (fr) * 1999-07-14 2001-01-25 Hughes Electronics Corporation Ensemble monolithique diode en parallele et pile solaire

Also Published As

Publication number Publication date
WO2003054926A2 (fr) 2003-07-03

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