WO2003047108A3 - Temperaturstabilisierter oszillator-schaltkreis - Google Patents

Temperaturstabilisierter oszillator-schaltkreis Download PDF

Info

Publication number
WO2003047108A3
WO2003047108A3 PCT/DE2002/003907 DE0203907W WO03047108A3 WO 2003047108 A3 WO2003047108 A3 WO 2003047108A3 DE 0203907 W DE0203907 W DE 0203907W WO 03047108 A3 WO03047108 A3 WO 03047108A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
oscillator circuit
charge
temperature dependence
coupled memory
Prior art date
Application number
PCT/DE2002/003907
Other languages
English (en)
French (fr)
Other versions
WO2003047108A2 (de
Inventor
Werner Hoellinger
Mario Motz
Original Assignee
Infineon Technologies Ag
Werner Hoellinger
Mario Motz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Werner Hoellinger, Mario Motz filed Critical Infineon Technologies Ag
Priority to EP02776822A priority Critical patent/EP1446884B1/de
Priority to DE50205477T priority patent/DE50205477D1/de
Publication of WO2003047108A2 publication Critical patent/WO2003047108A2/de
Publication of WO2003047108A3 publication Critical patent/WO2003047108A3/de
Priority to US10/850,677 priority patent/US6992533B2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
    • H03K3/0231—Astable circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Dram (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

Ein temperaturstabilisierter Oszillator-Schaltkreis (1) umfasst einen ersten Teil mit einer ersten Temperaturabhängigkeit und einen zweiten Teil mit einer zu der ersten Temperaturabhängigkeit unterschiedlichen zweiten Temperaturabhängigkeit. Jeweils in einem der beiden Teile sind ein Ladungsspeicher (C2), eine steuerbare Aufintegrations-Stromquelle (T2) zum Laden des Ladungsspeichers (C2), eine steuerbare Abintegrations-Stromquelle (TB3) zum Entladen des Ladungsspeichers (C2) und zwei Widerstände (R2, R1), welche die gleichen Temperaturkoeffizienten aufweisen, enthalten.
PCT/DE2002/003907 2001-11-22 2002-10-15 Temperaturstabilisierter oszillator-schaltkreis WO2003047108A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02776822A EP1446884B1 (de) 2001-11-22 2002-10-15 Temperaturstabilisierter oszillator-schaltkreis
DE50205477T DE50205477D1 (de) 2001-11-22 2002-10-15 Temperaturstabilisierter oszillator-schaltkreis
US10/850,677 US6992533B2 (en) 2001-11-22 2004-05-21 Temperature-stabilized oscillator circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10157292.1 2001-11-22
DE10157292A DE10157292A1 (de) 2001-11-22 2001-11-22 Temperaturstabilisierter Oszillator-Schaltkreis

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/850,677 Continuation US6992533B2 (en) 2001-11-22 2004-05-21 Temperature-stabilized oscillator circuit

Publications (2)

Publication Number Publication Date
WO2003047108A2 WO2003047108A2 (de) 2003-06-05
WO2003047108A3 true WO2003047108A3 (de) 2003-11-06

Family

ID=7706573

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/003907 WO2003047108A2 (de) 2001-11-22 2002-10-15 Temperaturstabilisierter oszillator-schaltkreis

Country Status (5)

Country Link
US (1) US6992533B2 (de)
EP (1) EP1446884B1 (de)
CN (1) CN100409571C (de)
DE (2) DE10157292A1 (de)
WO (1) WO2003047108A2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7543253B2 (en) * 2003-10-07 2009-06-02 Analog Devices, Inc. Method and apparatus for compensating for temperature drift in semiconductor processes and circuitry
US20070040543A1 (en) * 2005-08-16 2007-02-22 Kok-Soon Yeo Bandgap reference circuit
DE102005043376B4 (de) 2005-09-12 2013-08-01 Austriamicrosystems Ag Oszillatoranordnung und Verfahren zum Erzeugen eines periodischen Signals
US7576598B2 (en) * 2006-09-25 2009-08-18 Analog Devices, Inc. Bandgap voltage reference and method for providing same
US8102201B2 (en) 2006-09-25 2012-01-24 Analog Devices, Inc. Reference circuit and method for providing a reference
US7852144B1 (en) * 2006-09-29 2010-12-14 Cypress Semiconductor Corporation Current reference system and method
US8217713B1 (en) 2006-10-24 2012-07-10 Cypress Semiconductor Corporation High precision current reference using offset PTAT correction
US7714563B2 (en) * 2007-03-13 2010-05-11 Analog Devices, Inc. Low noise voltage reference circuit
US7605578B2 (en) 2007-07-23 2009-10-20 Analog Devices, Inc. Low noise bandgap voltage reference
US8203392B2 (en) * 2007-08-24 2012-06-19 Standard Microsystems Corporation Oscillator stabilized for temperature and power supply variations
CN101174815B (zh) * 2007-11-16 2010-06-02 华中科技大学 一种电阻电容型环形振荡器
US7612606B2 (en) * 2007-12-21 2009-11-03 Analog Devices, Inc. Low voltage current and voltage generator
US7598799B2 (en) * 2007-12-21 2009-10-06 Analog Devices, Inc. Bandgap voltage reference circuit
US7902912B2 (en) * 2008-03-25 2011-03-08 Analog Devices, Inc. Bias current generator
US7880533B2 (en) * 2008-03-25 2011-02-01 Analog Devices, Inc. Bandgap voltage reference circuit
US7750728B2 (en) * 2008-03-25 2010-07-06 Analog Devices, Inc. Reference voltage circuit
KR20100079184A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 온도 측정 장치
US7907003B2 (en) * 2009-01-14 2011-03-15 Standard Microsystems Corporation Method for improving power-supply rejection
US8531248B2 (en) * 2009-02-09 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. VDD-independent oscillator insensitive to process variation
CN101989850B (zh) * 2009-08-06 2012-08-01 上海华虹Nec电子有限公司 电流-电容充放电片上振荡器
US8044740B2 (en) * 2009-09-03 2011-10-25 S3C, Inc. Temperature compensated RC oscillator for signal conditioning ASIC using source bulk voltage of MOSFET
CN102403902B (zh) * 2011-11-16 2014-02-05 无锡华润上华科技有限公司 一种应用于功率因数校正器中的高压大电流驱动电路
EP2770313B1 (de) * 2013-02-21 2015-04-08 ST-Ericsson SA Temperaturmessverfahren zur Erzeugung von temperaturabhängigen und temperaturunabhängigen Ausgabefrequenzen
US9126496B2 (en) * 2013-06-26 2015-09-08 GM Global Technology Operations LLC Control method to bias hybrid battery state-of-charge to improve autostop availability for light-electrification vehicles
JP6407902B2 (ja) * 2016-02-17 2018-10-17 株式会社東芝 発振回路
US10461700B2 (en) 2016-11-11 2019-10-29 Skyworks Solutions, Inc. Temperature compensated oscillator
CN111609943B (zh) * 2020-05-11 2022-04-12 Oppo广东移动通信有限公司 一种温度检测电路
CN112468088A (zh) * 2020-11-16 2021-03-09 珠海格力电器股份有限公司 Rc振荡器和rc振荡器系统
TWI794081B (zh) * 2022-04-20 2023-02-21 新唐科技股份有限公司 具有溫度補償的震盪器與使用其的電子裝置
TWI810010B (zh) * 2022-08-05 2023-07-21 新唐科技股份有限公司 具有溫度補償的低功耗振盪電路及電子裝置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0219994A2 (de) * 1985-10-15 1987-04-29 American Microsystems, Incorporated Temperaturkompensierter CMOS-Oszillator
US5352934A (en) * 1991-01-22 1994-10-04 Information Storage Devices, Inc. Integrated mosfet resistance and oscillator frequency control and trim methods and apparatus
US5760657A (en) * 1996-09-30 1998-06-02 Intel Corporation Method and apparatus employing a process dependent impedance that compensates for manufacturing variations in a voltage controlled oscillator
WO1999038260A1 (fr) * 1998-01-23 1999-07-29 Em Microelectronic-Marin S.A. Oscillateur compense en temperature
EP0944169A2 (de) * 1998-03-19 1999-09-22 Microchip Technology Inc. Integrierte Präzisions-Kipposzillatorschaltung mit Temperaturkompensation
FR2783372A1 (fr) * 1998-09-14 2000-03-17 St Microelectronics Sa Oscillateur rc stabilise en temperature
US6157270A (en) * 1998-12-28 2000-12-05 Exar Corporation Programmable highly temperature and supply independent oscillator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4205279A (en) * 1977-09-12 1980-05-27 Motorola, Inc. CMOS Low current RC oscillator
JP2990863B2 (ja) * 1991-06-26 1999-12-13 日本電気株式会社 発振回路
US5491456A (en) * 1994-12-08 1996-02-13 Texas Instruments Incorporated Oscillator compensated for improved frequency stability
US5670907A (en) * 1995-03-14 1997-09-23 Lattice Semiconductor Corporation VBB reference for pumped substrates
US5870345A (en) * 1997-09-04 1999-02-09 Siemens Aktiengesellschaft Temperature independent oscillator
JP3640801B2 (ja) * 1998-05-27 2005-04-20 松下電器産業株式会社 電圧制御発振器
DE10032526C1 (de) * 2000-07-05 2002-02-21 Infineon Technologies Ag Oszillator-Schaltkreis

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0219994A2 (de) * 1985-10-15 1987-04-29 American Microsystems, Incorporated Temperaturkompensierter CMOS-Oszillator
US5352934A (en) * 1991-01-22 1994-10-04 Information Storage Devices, Inc. Integrated mosfet resistance and oscillator frequency control and trim methods and apparatus
US5760657A (en) * 1996-09-30 1998-06-02 Intel Corporation Method and apparatus employing a process dependent impedance that compensates for manufacturing variations in a voltage controlled oscillator
WO1999038260A1 (fr) * 1998-01-23 1999-07-29 Em Microelectronic-Marin S.A. Oscillateur compense en temperature
EP0944169A2 (de) * 1998-03-19 1999-09-22 Microchip Technology Inc. Integrierte Präzisions-Kipposzillatorschaltung mit Temperaturkompensation
FR2783372A1 (fr) * 1998-09-14 2000-03-17 St Microelectronics Sa Oscillateur rc stabilise en temperature
US6157270A (en) * 1998-12-28 2000-12-05 Exar Corporation Programmable highly temperature and supply independent oscillator

Also Published As

Publication number Publication date
WO2003047108A2 (de) 2003-06-05
CN1589528A (zh) 2005-03-02
EP1446884A2 (de) 2004-08-18
EP1446884B1 (de) 2005-12-28
US6992533B2 (en) 2006-01-31
US20040251980A1 (en) 2004-12-16
DE10157292A1 (de) 2003-06-05
DE50205477D1 (de) 2006-02-02
CN100409571C (zh) 2008-08-06

Similar Documents

Publication Publication Date Title
WO2003047108A3 (de) Temperaturstabilisierter oszillator-schaltkreis
AU2001280676A1 (en) High temperature circuit structures
EP1184988A3 (de) PLL-Schaltung
AU4394999A (en) Pll circuit
AU2001243392A1 (en) An integrated circuit architecture with standard blocks
AU4481000A (en) Integrated circuit low leakage power circuitry for use with an advanced cmos process
WO2002003552A3 (en) Rc-timer scheme
AU3784499A (en) Passive switched oscillator output circuit
AU2001276986A1 (en) Tunable microwave devices with auto-adjusting matching circuit
AU2001236895A1 (en) Integrated circuit
DE69942625D1 (de) Spannungsgesteuerte CMOS Oszillatorschaltung
AU5062900A (en) Radio terminal for browsing the internet
AU2002324812A1 (en) High voltage integrated circuit amplifier
AU2001239299A1 (en) Voltage controlled crystal oscillator temperature compensating circuit
WO2001071884A3 (en) Integrated circuit having various operational modes
AU3509600A (en) High voltage automotive fuse
GB2341020B (en) Approximate third-order function generator, and temperature compensated crystal oscillation circuit made by using the same
AU1421900A (en) Asynchronous transfer on the cellular radio link
GB2316559B (en) Driver circuit with temperature correction circuit
AU6424699A (en) Start-assist circuit
GB0009908D0 (en) Improved transmitter coil, improved fuze setter circuitry for adaptively tuning the fuze setter circuit for resonance and current difference circuitry
SG102658A1 (en) General-purpose temperature compensating current master-bias circuit
ZA200106389B (en) Activatable battery for an electronic artillery fuse.
AU2002324688A1 (en) Logic state transition sensor circuit
WO2003007912A3 (en) Lyophilized formulation comprising olanzapine

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): DE DK FI FR GB IT SE

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2002776822

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10850677

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 20028232690

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2002776822

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 2002776822

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP