WO2003038384A1 - Procede de mesure de temperature, procede de traitement thermique et procede de fabrication de dispositif a semi-conducteur - Google Patents

Procede de mesure de temperature, procede de traitement thermique et procede de fabrication de dispositif a semi-conducteur Download PDF

Info

Publication number
WO2003038384A1
WO2003038384A1 PCT/JP2002/006655 JP0206655W WO03038384A1 WO 2003038384 A1 WO2003038384 A1 WO 2003038384A1 JP 0206655 W JP0206655 W JP 0206655W WO 03038384 A1 WO03038384 A1 WO 03038384A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat treating
semiconductor device
temperature measuring
device manufacturing
substrate
Prior art date
Application number
PCT/JP2002/006655
Other languages
English (en)
French (fr)
Inventor
Satoshi Shibata
Junji Hirase
Tatsuo Sugiyama
Emi Kanasaki
Fumitoshi Kawase
Yasushi Naito
Original Assignee
Matsushita Electric Industrial Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co., Ltd. filed Critical Matsushita Electric Industrial Co., Ltd.
Priority to EP02741382A priority Critical patent/EP1355138A4/en
Priority to US10/343,762 priority patent/US7037733B2/en
Priority to JP2003540606A priority patent/JPWO2003038384A1/ja
Publication of WO2003038384A1 publication Critical patent/WO2003038384A1/ja

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Radiation Pyrometers (AREA)
  • Semiconductor Integrated Circuits (AREA)
PCT/JP2002/006655 2001-10-30 2002-07-01 Procede de mesure de temperature, procede de traitement thermique et procede de fabrication de dispositif a semi-conducteur WO2003038384A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02741382A EP1355138A4 (en) 2001-10-30 2002-07-01 TEMPERATURE MEASUREMENT METHOD, THERMAL PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
US10/343,762 US7037733B2 (en) 2001-10-30 2002-07-01 Method for measuring temperature, annealing method and method for fabricating semiconductor device
JP2003540606A JPWO2003038384A1 (ja) 2001-10-30 2002-07-01 温度測定方法、熱処理方法および半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001332217 2001-10-30
JP2001-332217 2001-10-30

Publications (1)

Publication Number Publication Date
WO2003038384A1 true WO2003038384A1 (fr) 2003-05-08

Family

ID=19147666

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/006655 WO2003038384A1 (fr) 2001-10-30 2002-07-01 Procede de mesure de temperature, procede de traitement thermique et procede de fabrication de dispositif a semi-conducteur

Country Status (6)

Country Link
US (1) US7037733B2 (ja)
EP (1) EP1355138A4 (ja)
JP (1) JPWO2003038384A1 (ja)
CN (1) CN1554015A (ja)
TW (1) TWI276189B (ja)
WO (1) WO2003038384A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015177891A1 (ja) * 2014-05-21 2015-11-26 三菱電機株式会社 半導体装置の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2914488B1 (fr) * 2007-03-30 2010-08-27 Soitec Silicon On Insulator Substrat chauffage dope
US9721853B2 (en) * 2013-03-13 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for forming a semiconductor device
CN103411684B (zh) * 2013-07-17 2016-04-06 中微半导体设备(上海)有限公司 测量反应腔室内薄膜温度的方法
CN104697643B (zh) * 2013-12-05 2018-06-26 北京智朗芯光科技有限公司 一种在线实时检测外延片温度的方法
WO2017034057A1 (ko) * 2015-08-27 2017-03-02 주식회사 제우스 기판처리장치와 기판처리방법
CN106486362B (zh) * 2015-08-28 2020-03-10 中芯国际集成电路制造(上海)有限公司 测试结构及其形成方法、测试方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321539A (ja) * 1997-05-22 1998-12-04 Hitachi Ltd 半導体製造方法および製造装置
JPH1180953A (ja) * 1997-09-09 1999-03-26 Nissin Electric Co Ltd 基板の冷却状態検知方法
US5900177A (en) * 1997-06-11 1999-05-04 Eaton Corporation Furnace sidewall temperature control system
US20010014111A1 (en) * 2000-02-16 2001-08-16 Masahiro Shimizu Method for measuring radiation temperature, equipment for measuring radiation temperature and equipment for manufacturing semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4764026A (en) * 1986-07-07 1988-08-16 Varian Associates, Inc. Semiconductor wafer temperature measuring device and method
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5114242A (en) * 1990-12-07 1992-05-19 Ag Processing Technologies, Inc. Bichannel radiation detection method
US5156461A (en) * 1991-05-17 1992-10-20 Texas Instruments Incorporated Multi-point pyrometry with real-time surface emissivity compensation
US5296385A (en) * 1991-12-31 1994-03-22 Texas Instruments Incorporated Conditioning of semiconductor wafers for uniform and repeatable rapid thermal processing
US5624590A (en) * 1993-04-02 1997-04-29 Lucent Technologies, Inc. Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
JPH06333331A (ja) * 1993-05-20 1994-12-02 Matsushita Electric Ind Co Ltd ディスク回転装置
US5439850A (en) * 1993-09-08 1995-08-08 North Carolina State University Method for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processing
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
US6177127B1 (en) * 1995-12-15 2001-01-23 Micron Technology, Inc. Method of monitoring emissivity
KR970054170A (ja) * 1995-12-25 1997-07-31
JPH09329063A (ja) * 1996-06-12 1997-12-22 Hitachi Ltd エバポシステムの診断方法
US6166354A (en) * 1997-06-16 2000-12-26 Advanced Micro Devices, Inc. System and apparatus for in situ monitoring and control of annealing in semiconductor fabrication
US5814365A (en) * 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US6374150B2 (en) * 1998-07-30 2002-04-16 Applied Materials, Inc. Method and apparatus for monitoring and/or end point detecting a process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10321539A (ja) * 1997-05-22 1998-12-04 Hitachi Ltd 半導体製造方法および製造装置
US5900177A (en) * 1997-06-11 1999-05-04 Eaton Corporation Furnace sidewall temperature control system
JPH1180953A (ja) * 1997-09-09 1999-03-26 Nissin Electric Co Ltd 基板の冷却状態検知方法
US20010014111A1 (en) * 2000-02-16 2001-08-16 Masahiro Shimizu Method for measuring radiation temperature, equipment for measuring radiation temperature and equipment for manufacturing semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1355138A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015177891A1 (ja) * 2014-05-21 2015-11-26 三菱電機株式会社 半導体装置の製造方法
JPWO2015177891A1 (ja) * 2014-05-21 2017-04-20 三菱電機株式会社 半導体装置の製造方法
US9865513B2 (en) 2014-05-21 2018-01-09 Mitsubishi Electric Corporation Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPWO2003038384A1 (ja) 2005-02-24
US7037733B2 (en) 2006-05-02
TWI276189B (en) 2007-03-11
EP1355138A4 (en) 2005-07-20
EP1355138A1 (en) 2003-10-22
US20040023421A1 (en) 2004-02-05
CN1554015A (zh) 2004-12-08

Similar Documents

Publication Publication Date Title
Kamins Structure and properties of LPCVD silicon films
Dat et al. Pulsed laser ablation synthesis and characterization of layered Pt/SrBi2Ta2O9/Pt ferroelectric capacitors with practically no polarization fatigue
WO2002084708A3 (en) Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
ES2154850T3 (es) Formacion de contactos en sustratos semiconductores para detectores de radiacion y dispositivos de creacion de imagenes.
CA2471268A1 (en) Method for the production of an electrically conductive resistive layer and heating and/or cooling device
US5877094A (en) Method for fabricating a silicon-on-sapphire wafer
WO2003032380A1 (fr) Dispositif et procede de traitement d'un substrat
TW329037B (en) Semiconductor memory device
AU2001253575A1 (en) Process for fabricating thin film transistors
WO2004049441A3 (en) Low thermal budget fabrication of ferroelectric memory using rtp
EP0800204A3 (en) A process for device fabrication in which a thin layer of cobalt silicide is formed
CN1961406A (zh) 用于存储单元形成的原位表面处理
EP1049144A4 (en) THIN SEMICONDUCTOR LAYER, METHOD AND DEVICE THEREOF, SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SAME
WO2002067314A3 (en) High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques
JP2000236015A5 (ja)
EP1104934A3 (en) Method to selectively heat semiconductor wafers
WO2004077526A3 (en) Coated spherical silicon nanoparticle thin film uv detector with uv response and method of making
CA2381597A1 (en) Circuit pattern of resistance heating elements and substrate-treating apparatus incorporating the pattern
TW201230169A (en) Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
WO2003038384A1 (fr) Procede de mesure de temperature, procede de traitement thermique et procede de fabrication de dispositif a semi-conducteur
EP1130628A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
TW269052B (en) Process for semiconductor wafer, semiconductor integrated circuit and devices thereof
AUPP646298A0 (en) Melt through contact formation method
EP1143502A4 (en) METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
TW253992B (en) Dielectric as load resistor in 4T SRAM

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 02802042.1

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 2003540606

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 10343762

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2002741382

Country of ref document: EP

AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWP Wipo information: published in national office

Ref document number: 2002741382

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2002741382

Country of ref document: EP