WO2003027352A1 - Dual-source, single-chamber method and apparatus for sputter deposition - Google Patents
Dual-source, single-chamber method and apparatus for sputter deposition Download PDFInfo
- Publication number
- WO2003027352A1 WO2003027352A1 PCT/US2002/030867 US0230867W WO03027352A1 WO 2003027352 A1 WO2003027352 A1 WO 2003027352A1 US 0230867 W US0230867 W US 0230867W WO 03027352 A1 WO03027352 A1 WO 03027352A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sputtering
- target
- epitaxial film
- getter
- pumping
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Definitions
- This invention relates to a dual-source, single-chamber method and apparatus for epitaxial sputter deposition of epilayers and high quality films
- Ultra high vacuum conditions are characterized by a low level of the partial pressure of any contaminating gasses present in the deposition chamber.
- One embodiment of this invention is an apparatus for film deposition containing (a) a target for sputtering an epitaxial film, (b) a target for sputtering a pumping getter, and (c) a cryogenic shroud interposed between the epitaxial film target and the pumping getter target .
- Various other embodiments of this invention are (a) an apparatus for creating a vacuum in a sputter deposition chamber containing a cylindrical, cryogenic pumping getter disposed within the sputter deposition chamber; (b) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target for sputtering an epitaxial film, and (ii) a target for sputtering a pumping getter; (c) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target, for sputtering an epitaxial film, that generates contaminants, and (ii) a shroud disposed about the epitaxial film target to reduce the concentration of contaminants within the chamber; and (d) an apparatus for film deposition containing (i) a target for sputtering an epitaxial film, (ii) a target for sputtering a pumping getter, and (iii) a pumping getter inter
- Various other embodiments of this invention are a method of depositing a film by the use of the apparatus of this invention, such as (a) a method of depositing a film by sputtering, in a single sputtering chamber, (i) an epitaxial film material onto a substrate, and (ii) a pumping getter material onto a pumping getter; (b) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a cryogenic pumping getter disposed within the sputter deposition chamber; or (c) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a pumping getter disposed between a target containing the pumping getter material and a target containing material for sputtering an epitaxial film.
- Fig. 1 is a cross sectional view of a film deposition device.
- This invention provides an improved approach for growing high quality thick epilayers using sputtering. This method is particularly useful in the situation in which the sputtering process time is so long that the pumping speed of an ultra high vacuum pump could change while sputtering is on-going.
- a sputtering process is used in this invention. This approach of this invention typically reduces pressure to about 10 "11 to about 10 "12 Torr.
- a film of a reactive material (a pumping getter) is formed using a sputtering process.
- the gas used to sputter the getter may be the same as the gas also used to sputter a desired product such as an epitaxial film.
- a typical example of such gas is argon .
- a sputtering process for growing an epitaxial film and a separate sputtering process for creating a film for a pumping getter are provided in the same sputtering chamber.
- a sputtering chamber is therefore proved herein that includes two sputtering sources. As shown in Fig. 1, the first sputtering source 2 is for the sputtering of an epitaxial film.
- the second sputtering source 4 is for the sputtering of reactive materials, such as titanium chromium or titanium-molybdenum, to create a getter.
- the first sputtering source and substrate 6 are surrounded by a cryogenic shroud 8, such as a shroud cooled by liquid nitrogen or helium.
- the second sputtering source is mounted outside of the cryogenic shroud.
- the reactive material functioning as a pumping getter, effectively absorbs contaminant gases such as H 2 , N 2 , CO, C0 2 , water vapor and the like.
- the purity and overall quality of epitaxial films deposited is substantially higher (relative to otherwise similar films produced by other or prior art processes) .
- the pumping speed of the getter film, which may be sputtered simultaneously with the epitaxial film, is substantially constant .
- the cryogenic shroud is typically a stainless steel cylinder, filled with a coolant such as liquid nitrogen, that is open on the ends. Contaminant gases may flow out of the open ends. Shields protect the open ends and prevent penetration of the sputtered getter material from entering the space enclosed by the interior of the cylindrically-shaped shroud.
- the ionized sputtering gas that is utilized to sputter an epitaxial film within the shroud creates a high gas pressure on the inside compared with the outside. This condition also helps prevent the sputtered getter material from penetrating inside the shroud and contaminating the epitaxial film.
- the sputtering chamber of this device includes two sputtering sources .
- the first sputtering source is for the sputtering of an epitaxial film.
- the second sputtering source is for the sputtering of reactive materials such as titanium to create getters. This is the getter pump.
- the sputtering source for the getter material deposition might be a typical RF (radio frequency) diode sputtering source, or AC, such as at about 13.56 MHz.
- the getter target thickness must be large enough to provide continuous and simultaneous sputtering of the getter material during the sputtering of the epitaxial film.
- the first sputtering source and the substrate are surrounded by a cryogenic shroud, such as a liquid nitrogen shroud.
- the second sputtering source is mounted outside of the cryogenic shroud.
- the sputtering of said getter occurs on the outside surface of the cryogenic shroud.
- the getter effectively absorbs reactive, contaminant gases such as H 2 , N 2 , CO, C0 2 , and water vapor that affect the quality of the growing epilayer.
- a set of shields prevents penetration of the getter material atoms inside the cryogenic shroud, and helps keep the growing epitaxial film free of getter material contamination.
- the ionized sputtering gas that is utilized to sputter an epitaxial film within the shroud creates a high gas pressure on the inside compared with the outside. This condition also helps prevent the sputtered getter material from penetrating inside the shroud and contaminating the epitaxial film.
- the first sputtering source 2 and the second sputtering source 4 are preferably, but not necessarily, oriented at approximately ninety degrees with respect to each other, as shown in Figure 1. This arrangement may be desirable inasmuch as the getter material typically deposits on the outside of the shroud, the epitaxial film material deposits on the substrate, the substrate is typically placed to be essentially perpendicular to the walls of the shroud.
- this invention involves an apparatus for film deposition containing (a) a target for sputtering an epitaxial film, (b) a target for sputtering a pumping getter, and (c) a cryogenic shroud interposed between the epitaxial film target and the pumping getter target.
- the cryogenic shroud may be a pumping getter, or the pumping getter may be sputter deposited on the cryogenic shroud.
- the cryogenic shroud may be a metallic, cylindrically shaped vessel, and may be cooled by liquid nitrogen.
- the pumping getter target may be a ring, band, coil or collar disposed about the cryogenic shroud, and the material of the pumping getter target may be titanium.
- the epitaxial film target and the pumping getter target may be located in a single sputtering chamber, and the epitaxial film may have a thickness of greater than one micrometer.
- the invention provides (a) an apparatus for creating a vacuum in a sputter deposition chamber containing a cylindrical, cryogenic pumping getter disposed within the sputter deposition chamber; (b) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target for sputtering an epitaxial film, and (ii) a target for sputtering a pumping getter; (c) an apparatus for film deposition containing, within a single sputtering chamber, (i) a target, for sputtering an epitaxial film, that generates contaminants, and (ii) a shroud disposed about the epitaxial film target to reduce the concentration of contaminants within the chamber; or (d) an apparatus for film deposition containing (i) a target for sputtering an epitaxial film, (ii) a target for sputtering a pumping getter, and (iii) a pumping getter interposed between
- the invention also provides a method of depositing a film by the use of the apparatus of this invention, such as (a) a method of depositing a film by sputtering, in a single sputtering chamber, (i) an epitaxial film material onto a substrate, and (ii) a pumping getter material onto a pumping getter; (b) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a cryogenic pumping getter disposed within the sputter deposition chamber; or (c) a method of reducing contamination in a sputtering chamber by sputtering pumping getter material onto a pumping getter disposed between a target containing the pumping getter material and a target containing material for sputtering an epitaxial film.
- the epitaxial film and pumping getter may be sputtered simultaneously, and the deposition may occur for at least one hour.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02776033A EP1438442A1 (en) | 2001-09-27 | 2002-09-27 | Dual-source, single-chamber method and apparatus for sputter deposition |
JP2003530912A JP2005504172A (en) | 2001-09-27 | 2002-09-27 | Dual-source single-chamber method and apparatus for sputter deposition |
KR10-2004-7004398A KR20040044994A (en) | 2001-09-27 | 2002-09-27 | Dual-source, single-chamber method and apparatus for sputter deposition |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32533201P | 2001-09-27 | 2001-09-27 | |
US60/325,332 | 2001-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003027352A1 true WO2003027352A1 (en) | 2003-04-03 |
Family
ID=23267444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/030867 WO2003027352A1 (en) | 2001-09-27 | 2002-09-27 | Dual-source, single-chamber method and apparatus for sputter deposition |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1438442A1 (en) |
JP (1) | JP2005504172A (en) |
KR (1) | KR20040044994A (en) |
CN (1) | CN1561405A (en) |
WO (1) | WO2003027352A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8057856B2 (en) * | 2004-03-15 | 2011-11-15 | Ifire Ip Corporation | Method for gettering oxygen and water during vacuum deposition of sulfide films |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100560786C (en) * | 2006-06-02 | 2009-11-18 | 鸿富锦精密工业(深圳)有限公司 | Sputtering apparatus and jet-plating method |
CN101492811B (en) * | 2009-02-20 | 2012-01-25 | 电子科技大学 | Self-air-suction vacuum plating method |
CN101886248B (en) * | 2009-05-15 | 2013-08-21 | 鸿富锦精密工业(深圳)有限公司 | Sputtering coating device |
CN103189957B (en) * | 2010-10-05 | 2016-01-20 | 欧瑞康先进科技股份公司 | Original position for vacuum processable polymer substrate regulates |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3691053A (en) * | 1969-01-02 | 1972-09-12 | Univ North Wales | Getter-sputtering apparatus |
US4062319A (en) * | 1975-12-18 | 1977-12-13 | Western Electric Co., Inc. | Vacuum treating apparatus |
US4704301A (en) * | 1985-01-17 | 1987-11-03 | International Business Machines Corporation | Method of making low resistance contacts |
JPH06192829A (en) * | 1992-04-15 | 1994-07-12 | Asahi Glass Co Ltd | Thin film forming device |
-
2002
- 2002-09-27 KR KR10-2004-7004398A patent/KR20040044994A/en not_active Application Discontinuation
- 2002-09-27 JP JP2003530912A patent/JP2005504172A/en not_active Withdrawn
- 2002-09-27 EP EP02776033A patent/EP1438442A1/en not_active Withdrawn
- 2002-09-27 CN CNA028191331A patent/CN1561405A/en active Pending
- 2002-09-27 WO PCT/US2002/030867 patent/WO2003027352A1/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3691053A (en) * | 1969-01-02 | 1972-09-12 | Univ North Wales | Getter-sputtering apparatus |
US4062319A (en) * | 1975-12-18 | 1977-12-13 | Western Electric Co., Inc. | Vacuum treating apparatus |
US4704301A (en) * | 1985-01-17 | 1987-11-03 | International Business Machines Corporation | Method of making low resistance contacts |
JPH06192829A (en) * | 1992-04-15 | 1994-07-12 | Asahi Glass Co Ltd | Thin film forming device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8057856B2 (en) * | 2004-03-15 | 2011-11-15 | Ifire Ip Corporation | Method for gettering oxygen and water during vacuum deposition of sulfide films |
Also Published As
Publication number | Publication date |
---|---|
JP2005504172A (en) | 2005-02-10 |
KR20040044994A (en) | 2004-05-31 |
CN1561405A (en) | 2005-01-05 |
EP1438442A1 (en) | 2004-07-21 |
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