WO2003010889A1 - Circuit inducteur actif et circuit lc oscillant - Google Patents

Circuit inducteur actif et circuit lc oscillant Download PDF

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Publication number
WO2003010889A1
WO2003010889A1 PCT/JP2002/006784 JP0206784W WO03010889A1 WO 2003010889 A1 WO2003010889 A1 WO 2003010889A1 JP 0206784 W JP0206784 W JP 0206784W WO 03010889 A1 WO03010889 A1 WO 03010889A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
inductor
value
present
active inductor
Prior art date
Application number
PCT/JP2002/006784
Other languages
English (en)
Japanese (ja)
Inventor
Yoshihiko Horio
Kinya Matsuda
Kazuyuki Aihara
Original Assignee
Japan Science And Technology Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science And Technology Corporation filed Critical Japan Science And Technology Corporation
Publication of WO2003010889A1 publication Critical patent/WO2003010889A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/46—One-port networks
    • H03H11/48—One-port networks simulating reactances
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator

Definitions

  • the present invention relates to an active inductor circuit and an LC oscillation circuit, and particularly to an active inductor circuit and an LC oscillation circuit having a high CHI.
  • Girin j View: Girin j
  • FIG. 1 is a configuration diagram of a conventional inductor transistor circuit
  • FIG. 2 is a diagram showing a small signal equivalent circuit of the inductor transistor circuit.
  • the Q factor of the conventional active inductor circuit shown in FIG. 1 is low, usually about 3 to 5.
  • the main reason for the low Q value is the output resistance r of the MOSFET in Fig. 2. It is. Since the input signal voltage v t is directly applied to the output resistance r Q , the current in phase with the input signal is the output resistance r. Flows to That is, the current i t is R L - the combined current of the CL circuit delay current by the same phase current according to the output resistance r Q. this As a result, the Q value decreases by the amount of the in-phase current.
  • an object of the present invention is to provide an active inductor circuit and an LC oscillation circuit having a high Q value.
  • an ingakuta transistor circuit combining a two-stage phase shift circuit consisting of a resistor and a capacitor is provided, and the extra real number component of the terminal current of the ingta transistor circuit is canceled out. It is characterized by obtaining a value.
  • an inductor transistor circuit is provided by combining a two-stage phase shift circuit consisting of a resistor and a capacitor, and this is achieved by canceling out the extra real component of the terminal current of this inductor transistor circuit.
  • a negative conductance is also realized, and a capacitor is connected to the inductor transistor circuit.
  • FIG. 1 is a configuration diagram of a conventional inductor transistor circuit.
  • FIG. 2 is a diagram showing a small-signal equivalent circuit of a conventional inductor transistor circuit.
  • FIG. 3 is a configuration diagram of an active inductor circuit having a high Q value showing an embodiment of the present invention.
  • FIG. 4 is a diagram showing a small signal equivalent circuit of the circuit of FIG. 3 showing an embodiment of the present invention.
  • FIG. 5 is a diagram showing frequency characteristics of Ge showing an embodiment of the present invention.
  • FIG. 6 is a diagram showing admittance showing an embodiment of the present invention.
  • FIG. 7 is a diagram showing a frequency characteristic of a EQ showing an embodiment of the present invention.
  • FIG. 8 is a diagram showing a frequency characteristic of Q showing an embodiment of the present invention.
  • FIG. 9 shows an embodiment of the present invention using the active inductor circuit of the present invention.
  • FIG. 3 is an LC oscillation circuit diagram.
  • FIG. 10 is a diagram showing an oscillation waveform, which is the HS PICE TIME SHITTING of the circuit of FIG.
  • FIG. 11 is a configuration diagram of a resonance circuit used in a first experiment of the present invention.
  • FIG. 12 is a diagram showing a resonance curve obtained by the first experiment of the present invention.
  • FIG. 13 is a configuration diagram of an LC oscillation circuit used in the second experiment of the present invention.
  • FIG. 14 is a diagram showing an oscillation waveform obtained by the second experiment of the present invention.
  • FIG. 3 is a configuration diagram of an active inductor circuit having a high Q value showing an embodiment of the present invention
  • FIG. 4 is a diagram showing a small signal equivalent circuit of the inductor transistor circuit.
  • 1 1 is a first resistor R
  • 1 2 is a first capacitor C
  • 13 is a second resistor R 2
  • 14 is a second capacitor C 2
  • 15 is a MO.
  • 16 is a node D L.
  • a two-stage RC phase shift circuit including a first phase shift circuit R, -Ci and a second phase shift circuit R 2 —C 2 is used.
  • the MOSFET (M L) 1 5 of the gate G a signal whose phase is delayed 90 ° or more with respect to the input voltage v t is applied. That is, the real component of the signal voltage v ss applied to the gate G can be made negative.
  • the signal voltage v ss is converted into a current i gm by the transconductance g m of MO SF ET (ML) 15, and its real component is the current i flowing through the output resistance r Q of MO SF ET (ML) 15.
  • the sign is opposite to r .
  • the real part of the current i t flowing into the node D L becomes small, and the Q value becomes Can be higher.
  • G, G— [1 / R 2 (1 + ⁇ 2 A 2 )]
  • G 2 C, + [A / R 2 (1 + ⁇ 2 A 2 )]
  • an oscillation circuit can be formed by forming a parallel resonance circuit with the capacitor C as shown in FIG.
  • the DC current source I bias in FIG. 9 is used to bias the n-channel MOSFET (MNL) 20 to the saturation region.
  • the negative conductance of the active inductor circuit negates the conductance of the current source circuit that realizes this bias current source and maintains oscillation.
  • reference numeral 17 denotes a power supply Vdd
  • 18 denotes a bias current source
  • 19 denotes a capacity.
  • FIG. 11 is a configuration diagram of a resonance circuit used in a first experiment of the present invention.
  • an active inductor circuit using a p-channel MOS FET (MPL) 21 and a parallel circuit of a capacitor C were composed of individual components.
  • R is the resistance for measurement and bias.
  • FIG. 12 shows a resonance curve having the amplitude of.
  • the solid line is the actual measurement value, and the broken line is the theoretical value.
  • the p-channel MOS FET (MPL) 21 is the same as in FIG. In other words, 2 SJ 133 is used for MOS FET (MP L) 21.
  • the LC oscillation circuit can be made very compact.
  • the present invention is applicable to a wide variety of linear circuits and non-linear circuits, and the effect is remarkable. Industrial applicability
  • the present invention is suitable for an active inductor circuit having a high Q value, an inductor having a negative resistance, and an LC oscillation circuit, and in particular, a voltage-controlled sine-wave oscillation circuit, a voltage-controlled chaos oscillation circuit, and variable characteristics. It is applicable to general circuits using inductors such as filters.

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Networks Using Active Elements (AREA)

Abstract

L'invention concerne un circuit inducteur actif possédant une valeur Q élevée, ainsi qu'un circuit LC oscillant. Elle concerne aussi un circuit inducteur à transistor composé d'une combinaison de deux circuits comprenant des résistances (11, 13) et des condensateurs (12, 14). Le composant réel superflus du courant de borne du circuit inducteur à transistor est annulé, ce qui permet d'obtenir une valeur Q élevée. On obtient simultanément une conductance négative par réglage du paramètre du circuit de décalage de phase.
PCT/JP2002/006784 2001-07-24 2002-07-04 Circuit inducteur actif et circuit lc oscillant WO2003010889A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001222852A JP2003037479A (ja) 2001-07-24 2001-07-24 アクティブインダクタ回路及びｌｃ発振回路
JP2001-222852 2001-07-24

Publications (1)

Publication Number Publication Date
WO2003010889A1 true WO2003010889A1 (fr) 2003-02-06

Family

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Application Number Title Priority Date Filing Date
PCT/JP2002/006784 WO2003010889A1 (fr) 2001-07-24 2002-07-04 Circuit inducteur actif et circuit lc oscillant

Country Status (2)

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JP (1) JP2003037479A (fr)
WO (1) WO2003010889A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006074314A (ja) * 2004-09-01 2006-03-16 Japan Radio Co Ltd ブラインド適応等化器における引込方法及びブラインド適応等化器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4649275B2 (ja) * 2005-06-21 2011-03-09 日本電波工業株式会社 電圧制御型水晶発振器
EP2251973B1 (fr) 2008-03-13 2015-01-07 Asahi Kasei Microdevices Corporation Oscillateur
JP5109895B2 (ja) * 2008-09-18 2012-12-26 富士通株式会社 増幅回路及び受信装置
US8766746B2 (en) * 2011-09-21 2014-07-01 Fujitsu Limited Active inductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS344921B1 (fr) * 1956-08-18 1959-06-12
US3581123A (en) * 1969-03-27 1971-05-25 Gen Electric Circuit for providing inductive impedance

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS344921B1 (fr) * 1956-08-18 1959-06-12
US3581123A (en) * 1969-03-27 1971-05-25 Gen Electric Circuit for providing inductive impedance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006074314A (ja) * 2004-09-01 2006-03-16 Japan Radio Co Ltd ブラインド適応等化器における引込方法及びブラインド適応等化器
JP4553663B2 (ja) * 2004-09-01 2010-09-29 日本無線株式会社 ブラインド適応等化器における引込方法及びブラインド適応等化器

Also Published As

Publication number Publication date
JP2003037479A (ja) 2003-02-07

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