WO2003005454A3 - Rückseitenbestrahlbares msm-modul - Google Patents

Rückseitenbestrahlbares msm-modul

Info

Publication number
WO2003005454A3
WO2003005454A3 PCT/DE2002/002151 DE0202151W WO03005454A3 WO 2003005454 A3 WO2003005454 A3 WO 2003005454A3 DE 0202151 W DE0202151 W DE 0202151W WO 03005454 A3 WO03005454 A3 WO 03005454A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
illuminated
msm
electrode pair
photosensitive layer
Prior art date
Application number
PCT/DE2002/002151
Other languages
English (en)
French (fr)
Other versions
WO2003005454A2 (de
Inventor
Peter Gulden
Martin Vossiek
Original Assignee
Siemens Ag
Peter Gulden
Martin Vossiek
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Peter Gulden, Martin Vossiek filed Critical Siemens Ag
Priority to EP02747215A priority Critical patent/EP1405351A2/de
Priority to US10/481,501 priority patent/US20050145969A1/en
Publication of WO2003005454A2 publication Critical patent/WO2003005454A2/de
Publication of WO2003005454A3 publication Critical patent/WO2003005454A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

Die Erfindung betrifft ein BIMSM-Element (M, M'), wobei zumindest das Substrat (1,1'), das Elektrodenpaar (2) und die lichtempfindliche Schicht (3) gemeinsam monolithisch aufgebaut sind, und mindestens eine Elektrode des Elektrodenpaars (2) zur Einkopplung einer Modulationsspannung verwendbar ist, mindestens eine Elektrode des Elektrodenpaars (2) zur Auskopplung eines Mischproduktes verwendbar ist, und das MSM-Element (M,M') als elektrooptischer Mischer einsetzbar ist. Die Erfindung unterscheidet sich dabei von bekannten MSM Elementen darin, dass die lichtempfindliche Schicht (3) auf die Elektroden (2) abgeschieden wird.
PCT/DE2002/002151 2001-07-05 2002-06-12 Rückseitenbestrahlbares msm-modul WO2003005454A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP02747215A EP1405351A2 (de) 2001-07-05 2002-06-12 Rückseitenbestrahlbares msm-modul
US10/481,501 US20050145969A1 (en) 2001-07-05 2002-06-12 Back-illuminated msm module

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10132583A DE10132583A1 (de) 2001-07-05 2001-07-05 Rückseitenbestrahlbares MSM-Modul
DE10132583.5 2001-07-05

Publications (2)

Publication Number Publication Date
WO2003005454A2 WO2003005454A2 (de) 2003-01-16
WO2003005454A3 true WO2003005454A3 (de) 2003-05-30

Family

ID=7690698

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002151 WO2003005454A2 (de) 2001-07-05 2002-06-12 Rückseitenbestrahlbares msm-modul

Country Status (4)

Country Link
US (1) US20050145969A1 (de)
EP (1) EP1405351A2 (de)
DE (1) DE10132583A1 (de)
WO (1) WO2003005454A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1624490B1 (de) * 2004-08-04 2018-10-03 Heptagon Micro Optics Pte. Ltd. Grossflächiger Pixel für die Verwendung in einem Bildsensor
DE102006002732B4 (de) * 2006-01-20 2015-10-01 PMD Technologie GmbH Photomischdetektor und Verfahren zu dessen Betrieb
CA2759820C (en) * 2009-04-23 2017-08-08 Amirhossein Goldan Method and apparatus for a lateral radiation detector
CN107170842B (zh) * 2017-06-12 2019-07-02 京东方科技集团股份有限公司 光电探测结构及其制作方法、光电探测器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541438A (en) * 1994-07-14 1996-07-30 The United States Of America As Represented By The Secretary Of The Air Force Backside illuminated MSM device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2741763B2 (ja) * 1988-07-11 1998-04-22 株式会社日立製作所 半導体装置
US5404006A (en) * 1993-02-22 1995-04-04 Hughes Aircraft Company High power capacity optical receiver apparatus and method employing distributed photodetectors
US5600130A (en) * 1994-06-17 1997-02-04 The Regents Of The University Of Colorado Two-dimensional optoelectronic array module
DE19704496C2 (de) * 1996-09-05 2001-02-15 Rudolf Schwarte Verfahren und Vorrichtung zur Bestimmung der Phasen- und/oder Amplitudeninformation einer elektromagnetischen Welle
FR2758657B1 (fr) * 1997-01-17 1999-04-09 France Telecom Photodetecteur metal-semiconducteur-metal
EP1284021A4 (de) * 2000-04-20 2008-08-13 Digirad Corp Herstellung von rückbeleuchteten fotodioden mit niedrigem leckstrom
IL155223A0 (en) * 2000-10-13 2003-11-23 Litton Systems Inc Monolithic lead-salt infrared detectors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5541438A (en) * 1994-07-14 1996-07-30 The United States Of America As Represented By The Secretary Of The Air Force Backside illuminated MSM device

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
BUCHAL C ET AL: "SILICON-BASED METAL-SEMICONDUCTOR-METAL DETECTORS", MRS BULLETIN, PITTSBURGH, US, April 1998 (1998-04-01), pages 55 - 59, XP008006452 *
LAIH L-H ET AL: "High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD)", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 32, no. 10, 9 May 1996 (1996-05-09), pages 929 - 930, XP006005122, ISSN: 0013-5194 *
LAIH LI-HONG ET AL: "Amorphous metal-semiconductor-metal photodetector (MSM-PD) with bottom ridged Cr electrodes", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 35, no. 12, 10 June 1999 (1999-06-10), pages 1021 - 1022, XP006012238, ISSN: 0013-5194 *
VACCARO K ET AL: "Inverted, substrate-removed MSM and Schottky diode optical detectors", INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996. IPRM '96., EIGHTH INTERNATIONAL CONFERENCE ON SCHWABISCH-GMUND, GERMANY 21-25 APRIL 1996, NEW YORK, NY, USA,IEEE, US, 21 April 1996 (1996-04-21), pages 226 - 229, XP010157708, ISBN: 0-7803-3283-0 *
VENDIER O ET AL: "THIN-FILM INVERTED MSM PHOTODETECTORS", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 8, no. 2, 1 February 1996 (1996-02-01), pages 266 - 268, XP000551536, ISSN: 1041-1135 *

Also Published As

Publication number Publication date
EP1405351A2 (de) 2004-04-07
DE10132583A1 (de) 2003-01-23
US20050145969A1 (en) 2005-07-07
WO2003005454A2 (de) 2003-01-16

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