WO2003005410A3 - Hableiter-vorrichtung, halbleiter-teststruktur und verfahren zum herstellen einer halbleiter-vorrichtung - Google Patents
Hableiter-vorrichtung, halbleiter-teststruktur und verfahren zum herstellen einer halbleiter-vorrichtung Download PDFInfo
- Publication number
- WO2003005410A3 WO2003005410A3 PCT/DE2002/002179 DE0202179W WO03005410A3 WO 2003005410 A3 WO2003005410 A3 WO 2003005410A3 DE 0202179 W DE0202179 W DE 0202179W WO 03005410 A3 WO03005410 A3 WO 03005410A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor device
- semiconductor
- region
- producing
- electroconductive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01061—Promethium [Pm]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Abstract
Auf einem elektrisch aktiven Bereich ist ein Isolationsbereich aus einem Dielektrikum aufgebracht und darauf ein elektrisch leitfähiger Bereich, der an eine elektrisch leitfähige Zuleitung angeschlossen ist. Benachbart zu der elektrisch leitfähigen Zuleitung ist eine Hilfs-Leiterbahn angeordnet, welche mit einem Bereich mit mindestens mit Dotieratomen eines ersten Leitfähigkeitstyp hoch dotiert ist, verbunden ist.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/899,683 US20030006412A1 (en) | 2001-07-05 | 2001-07-05 | Semiconductor device, semiconductor test structure and method for fabricating a semiconductor device |
TW90116483 | 2001-07-05 | ||
TW90116483A TW513814B (en) | 2001-07-05 | 2001-07-05 | Semiconductor device, semiconductor test structure and method for fabricating a semiconductor device |
US09/899,683 | 2001-07-05 | ||
DE2001132641 DE10132641A1 (de) | 2001-07-05 | 2001-07-05 | Halbleiter-Vorrichtung, Halbleiter-Teststruktur und Verfahren zum Herstellen einer Halbleiter-Vorrichtung |
DE10132641.6 | 2001-07-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003005410A2 WO2003005410A2 (de) | 2003-01-16 |
WO2003005410A3 true WO2003005410A3 (de) | 2003-08-21 |
Family
ID=27214498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/002179 WO2003005410A2 (de) | 2001-07-05 | 2002-06-14 | Hableiter-vorrichtung, halbleiter-teststruktur und verfahren zum herstellen einer halbleiter-vorrichtung |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2003005410A2 (de) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5434108A (en) * | 1993-09-22 | 1995-07-18 | United Microelectronics Corporation | Grounding method to eliminate the antenna effect in VLSI process |
US5963412A (en) * | 1997-11-13 | 1999-10-05 | Advanced Micro Devices, Inc. | Process induced charging damage control device |
US5998299A (en) * | 1996-12-09 | 1999-12-07 | Texas Instruments Incorporated | Protection structures for the suppression of plasma damage |
US6034433A (en) * | 1997-12-23 | 2000-03-07 | Intel Corporation | Interconnect structure for protecting a transistor gate from charge damage |
US6323076B1 (en) * | 1999-04-21 | 2001-11-27 | Micron Technology, Inc. | Integrated circuit having temporary conductive path structure and method for forming the same |
-
2002
- 2002-06-14 WO PCT/DE2002/002179 patent/WO2003005410A2/de active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5434108A (en) * | 1993-09-22 | 1995-07-18 | United Microelectronics Corporation | Grounding method to eliminate the antenna effect in VLSI process |
US5998299A (en) * | 1996-12-09 | 1999-12-07 | Texas Instruments Incorporated | Protection structures for the suppression of plasma damage |
US5963412A (en) * | 1997-11-13 | 1999-10-05 | Advanced Micro Devices, Inc. | Process induced charging damage control device |
US6034433A (en) * | 1997-12-23 | 2000-03-07 | Intel Corporation | Interconnect structure for protecting a transistor gate from charge damage |
US6323076B1 (en) * | 1999-04-21 | 2001-11-27 | Micron Technology, Inc. | Integrated circuit having temporary conductive path structure and method for forming the same |
Also Published As
Publication number | Publication date |
---|---|
WO2003005410A2 (de) | 2003-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TR200000511T2 (tr) | Elektrikli cihazlar ve bunları imal etmek için bir yöntem. | |
TW200603384A (en) | Integrated circuit devices including a dual gate stack structure and methods of forming the same | |
TW200741968A (en) | Butted contact structure and method for forming the same | |
TW200601485A (en) | Semiconductor device substrate with wmbedded capacitor | |
WO2003081637A3 (de) | Leitungsüberführung für einen halbleiter-detektor | |
MXPA05003004A (es) | Alambre de comunicacion. | |
RS20050243A (en) | Communication wire | |
EP1187220A3 (de) | MOS-Feldeffekttransistor mit reduziertem Anschaltwiderstand | |
PT1956647E (pt) | Circuito com dispositivo de ligação e correspondente processo de produção | |
SG151075A1 (en) | Doping of semiconductor fin devices | |
TW200614518A (en) | Semiconductor device and method of manufacturing the same | |
TW200633188A (en) | Methods and structures for electrical communication with an overlying electrode for a semiconductor element | |
WO2002009178A3 (en) | Semiconductor device and a process for forming the same | |
TW200520146A (en) | Method for forming a semiconductor device having isolation regions | |
TW200518265A (en) | Copper damascene structure and semiconductor device including the structure and method of fabricating the same | |
WO2006123105A3 (en) | Semiconductor device and method of forming a semiconductor device | |
CN105789305B (zh) | 半导体装置 | |
MXPA04007911A (es) | Dispositivo y metodo para conexion de alambre. | |
WO2002047148A3 (en) | Electrically isolated via in a multilayer ceramic package | |
WO2003005410A3 (de) | Hableiter-vorrichtung, halbleiter-teststruktur und verfahren zum herstellen einer halbleiter-vorrichtung | |
MY121099A (en) | Device contact structure and method for fabricating same. | |
EP1369920A3 (de) | Verdrahtungsstruktur | |
TW200609631A (en) | Conducting line terminal structure, fabrication method thereof and display device using the same | |
WO2007137729A3 (de) | Verfahren zur herstellung einer halbleiteranordnung mit isolationsstruktur, halbleiteranordnung und deren verwendung | |
GB0230140D0 (en) | Thin film transistor method for producing a thin film transistor and electronic device having such a transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): CN US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
122 | Ep: pct application non-entry in european phase |