WO2003002860A2 - Dispositif d'injection de gaz dirige pour traitement de semi-conducteurs - Google Patents

Dispositif d'injection de gaz dirige pour traitement de semi-conducteurs Download PDF

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Publication number
WO2003002860A2
WO2003002860A2 PCT/US2002/016583 US0216583W WO03002860A2 WO 2003002860 A2 WO2003002860 A2 WO 2003002860A2 US 0216583 W US0216583 W US 0216583W WO 03002860 A2 WO03002860 A2 WO 03002860A2
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WO
WIPO (PCT)
Prior art keywords
gas injection
gas
substrate
processing system
orifice
Prior art date
Application number
PCT/US2002/016583
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English (en)
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WO2003002860A3 (fr
Inventor
Eric J. Strang
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2003508816A priority Critical patent/JP4504012B2/ja
Priority to US10/482,210 priority patent/US7217336B2/en
Priority to AU2002352262A priority patent/AU2002352262A1/en
Publication of WO2003002860A2 publication Critical patent/WO2003002860A2/fr
Publication of WO2003002860A3 publication Critical patent/WO2003002860A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Definitions

  • the present invention is directed to a method and system for utilizing a shaped orifice or nozzle in a plasma processing system.
  • a conventional approach to oxide etch employs a capacitively coupled plasma (CCP) source, wherein a process gas comprising argon, C x F y (e.g. C F 8 ), and O 2 is introduced to a low pressure environment to form plasma.
  • CCP capacitively coupled plasma
  • the plasma dissociation chemistry is tuned for optimal production of the chemical reactant suitable for chemically reacting with the substrate surface material to be etched (i.e., CF 2 for selective oxide etch).
  • the plasma further produces a population of positively charged ions (e.g. singly charged argon Ar + ) suitable for providing energy to the substrate surface to activate the etch chemistry.
  • a substrate RF bias is employed to attract ions to the substrate surface in a controllable, directional manner to affect the ion energy at the substrate surface and to provide an anisotropic etch for desired feature side-wall profiles.
  • oxide etch comprises two fundamentally unique processes. Firstly, electrons are heated in the plasma whereby collisions with fluorocarbon species leads to dissociation and formation of radical species, e.g. CF 3 , CF 2 , CF, F, etc. And secondly, electrons are heated to energies sufficient to ionize argon atoms, whereby the resultant ions are utilized to energize substrate surface CF x /SiO chemical reactions.
  • FIG. 1 an exploded view of an etch feature in an oxide layer is shown.
  • fluorocarbon radicals are formed. Thereafter, they diffuse to the substrate and deposit onto the etch feature surfaces.
  • an increased concentration of CF 2 radical local to the wafer surface can lead to several advantages (Nakagawa et al. 1998, Booth 1998, Kiss et al. 1992, Butterbaugh et al. 1991, Tatsumi et al.
  • CF X polymer layer atop the patterned photoresist tends to protect the resist during the etch process for improved selectivity of SiO 2 -to-resist etch
  • the formation of CF X polymer layer along sidewalls provides protection for improved etch anisotropy
  • the formation of CF 2 at the bottom of a feature provides a suitable etch reactant for selective etch of oxide relative to silicon that produces volatile products, i.e. one of many chemical reactions can be 2CF 2 + Si0 2 - ⁇ SiF 4 + 2CO .
  • the directional nature of the ion bombardment of the substrate surface leads to an anisotropic etch, wherein the argon ion energy is sufficient to activate the etch chemistry in the etch features.
  • the etch rate is typically proportional to the plasma density (ion density equals the electron density for a quasi-neutral plasma, and either can be referred generally as the plasma density), whereas the etch selectivity can be inversely proportional to the plasma density once the plasma density is sufficiently large to produce a highly dissociated radical concentration (i.e.
  • the inject plate generally comprises an array of several hundred (several hundred to several thousand) inject orifices through which gas is introduced to the processing region at a flow rate equivalent to 100 - 1000 seem argon.
  • the injection orifice is typically a cylindrical orifice as shown in FIG. 3 characterized by a length L and diameter d, wherein the ratio of the orifice length to the orifice diameter L/d is greater than 10 (i.e. L/d»l).
  • L/d the ratio of the orifice length to the orifice diameter L/d is greater than 10 (i.e. L/d»l).
  • L/d the ratio of the orifice length to the orifice diameter L/d
  • the discharge coefficient of an orifice C D is given by the ratio of the real mass flow rate to the isentropic mass flow rate.
  • the isentropic mass flow rate can be derived from the Euler equations (or inviscid Navier-Stoke's equations) for a quasi-one dimensional frictionless and adiabatic flow, viz.
  • ⁇ is the ratio of specific heats for the gas
  • R is the gas constant
  • P t is the total pressure
  • T t is the total temperature
  • It is another object of the present invention to provide a gas injection system design comprising one or more gas injection orifices, a sensor to monitor an intrinsic gas injection parameter and a controller, the use of which enables monitoring the state of the one or more gas injection orifices.
  • the state of the gas injection orifices can be used to determine consumable replacement.
  • It is another object of the present invention to provide a gas injection system design comprising one or more gas injection orifices, a sensor to monitor an intrinsic gas injection parameter and a controller, the use of which enables monitoring the state of the one or more gas injection orifices.
  • the current state of the gas injection orifices can be used to return the current state to the design state, hence controlling the gas injection orifices and prolonging consumable lifetime.
  • FIG. 1 is a cross-section of a high-aspect ratio feature being etched by a fluorocarbon plasma;
  • FIG. 2 is a cross-section of a high-aspect ratio feature being etched in the presence of an Argon plasma;
  • FIG. 3 is an enlarged cross-section of a shower-head injection orifice;
  • FIG. 4 is a schematic cross-section of a material processing system according to an embodiment of the present invention;
  • FIG. 5 A is a sonic orifice according to the first aspect of the present invention; [0022] FIG.
  • FIG. 5B is a divergent nozzle according to a second aspect of the present invention
  • FIG. 5C is a simple orifice according to a third aspect of the present invention
  • FIG. 6 is a graph showing a relation between orifice Knudsen number Kn and orifice aspect ratio L/d, and discharge coefficient
  • FIG. 7 is a schematic illustration of a probability distribution function of gas velocity angle local to the substrate surface
  • FIG. 8 is a schematic cross-section of an embodiment for a gas injection orifice spacing
  • FIG. 9 is a schematic plan- view of an embodiment for a gas injection orifice spacing
  • FIG. 10 is a schematic illustration of a method to fabricate gas injection orifices
  • FIG. 11 is a procedure to fabricate gas injection orifices;
  • FIG. 12 is a schematic representation of the inject total pressure during gas injection orifice erosion
  • FIG. 13 is a photograph of a gas injection orifice subjected to plasma erosion
  • FIG. 14 is an exemplary representation of a control path for adjusting the discharge coefficient.
  • the present invention improves a gas injection design utilized in a material processing device to affect improvements in chemical transport local to an exposed substrate surface.
  • substrate means any workpiece processed in a plasma environment, including, but not limited to semiconductor wafers and liquid crystal display panels.
  • the exposed substrate surface is exposed to either material etch or deposition steps, the combination of which serve to alter the material composition and/or topography of the exposed substrate surface.
  • FIG. 4 illustrates a schematic representation of a material processing system 1 comprising processing chamber 10 wherein processing region 12 is provided.
  • the processing region 12 preferably contains a gas at reduced pressure and plasma.
  • the material processing chamber 10 further comprises upper gas injection plate 20 through which processing gas 25 enters processing chamber 10.
  • chamber 10 provides substrate holder 30 upon which substrate 35 rests, wherein an upper surface of substrate 35 is exposed to processing region 12. Furthermore, the substrate holder 30 can be vertically translated by translation device 36 such that the spacing h between the exposed surface of substrate 35 and gas injection plate 20 can be varied. Effluent gas from processing region 12 is exhausted through chamber port 38 to vacuum pump 40.
  • the materials processing system 1 further includes controller 42 coupled to mass flow controller 44, pressure sensor 46, gas supply 48, vacuum pump 40 (gate valve, etc.), chamber pressure sensor 49 and substrate holder translation device 36. Improvements to the design of the gas injection plate 20 can facilitate improvements in material processing of the substrate 35, and these features are described below.
  • FIG.s 5 A, 5B, and 5C present three exemplary embodiments of a gas injection orifice according to the present invention.
  • the first cross-section (FIG. 5A) is referred to as a sonic orifice having throat 45 with throat diameter d (e.g., d is on the order of 0.025 to 0.5 mm) and first sidewall 50 with length L.
  • d throat diameter
  • L/d aspect ratio
  • the discharge coefficient (as defined above) is very sensitive to the ratio of the length L of the minimum area cross-section (e.g., first sidewall 50) to the diameter d of the minimum area cross- section (e.g., throat 45).
  • first sidewall 50 of throat 45 is parallel to orifice centerline 55.
  • the gas injection orifice further includes an inlet 65 to permit gas to enter orifice throat 45.
  • the orifice inlet 65 can comprise a passage with second sidewall 70 of a finite entry length and a cross-sectional area substantially greater than the cross-sectional area of the throat 45.
  • the cross-sectional area of inlet 65 is preferably a factor often (10) greater than the cross-sectional area of throat 45.
  • the design of inlet 65 is such that gas passes between second sidewall 70 until the gas arrives at throat entry wall 75 prior to throat 45. In one embodiment (not shown), the throat entry wall 75 remains flat until the first sidewall 50 (where the opening for the throat 45 begins).
  • the throat entry wall 75 comprises a slope (having an angle ⁇ indicated as 80 in FIG. 5A) between the throat entry wall 75 and the orifice centerline 55 (thereby forming a conical section at the entrance to throat 45).
  • the entrance angle 80 is preferably 45 degrees; however, entrance angle 80 of throat entry wall 75 can vary from 30 to 90 degrees as described above (an entrance angle 80 of 90 degrees is equivalent to a "flat" throat entry wall 75 as described above).
  • FIG. 5B illustrates a cross-section of a second embodiment of an inject orifice, namely a divergent nozzle.
  • the divergent nozzle includes a throat 45 of diameter d (e.g., d is on the order of 0.025 to 0.5 mm) and a corresponding aspect ratio L/d «l (e.g., L/d ⁇ 0.5).
  • d diameter
  • L/d aspect ratio
  • l aspect ratio
  • the purpose of the conical section is to restrain the rate at which the gas expands into the low pressure environment.
  • the angle 90 is preferably 5 ⁇ ⁇ ⁇ 20 degrees, and more preferably 15 ⁇ ⁇ ⁇ 20 degrees.
  • the conical section can be replaced with a concave section, particularly a smooth wall contour designed using the Method of Characteristics (i.e., a "perfect" nozzle or "minimum-length” nozzle).
  • VHS variable hard sphere
  • FIG. 5C a third embodiment, shown in FIG. 5C, the inlet 65, entry region with walls 70 and throat entry wall 75 are removed, and the gas injection orifice is fabricated within a piece of material of thickness equivalent to the length L of wall 50 (or throat 45).
  • the embodiment described in FIG. 5C is hereinafter referred to as a simple orifice.
  • FIG. 6 presents the measured discharge coefficient versus the orifice Knudsen number Kn.
  • the orifice Knudsen number represents the ratio of the mean free path at total (or stagnation) conditions to the throat diameter d.
  • Kn ⁇ 0.01 signifies the continuum regime
  • 0.01 ⁇ Kn ⁇ l signifies the transition regime
  • Kn>l signifies the free molecular flow regime.
  • the discharge coefficient for the sonic orifice can lead to a narrow angular distribution of the orifice flux. In other words, an increase in the inject total pressure (or decrease in the Knudsen number) and/or a high discharge coefficient can produce a highly directed gas jet.
  • a gas injection orifice design was described to increase or maximize the discharge coefficient C D (shown in FIG. 6).
  • a relationship between the gas injection performance local to the orifice and two locally defined parameters, namely the orifice aspect ratio L/d and the orifice Knudsen number Kn was established. Therefore, a parameter TI ⁇ , e.g. a measurable such as the discharge coefficient C D , can be described by these two parameters, i.e. Kn).
  • process gas 25 enters processing region 12 through a gas injection plate 20, wherein surface 22 of gas injection plate 20 is substantially parallel to the exposed surface of substrate 35.
  • process gas 25 is injected in a direction substantially normal to the surface of substrate 35.
  • PDF probability distribution function
  • the flux of mass into an etch or deposition feature is dependent on: (1) the gas number density proximate the exposed surface of substrate 35, and (2) the probability of an atom/molecule striking the surface at an angle substantially near normal incidence.
  • the first two dependent variables (C D and L/d) are related to the design of the gas injection orifice as discussed with reference to FIGs. 5A-C.
  • the design of the gas injection orifice can strongly affect the gas number density proximate the exposed surface of substrate 35 and to a lesser degree the incidence angle probability distribution function.
  • the third variable relates to the relative spacing of gas injection orifices on gas injection plate 20 and strongly affects incidence angle probability across the exposed surface of substrate 35. The preferred selection of ⁇ s/h is discussed below.
  • the discharge coefficient C D can be adjusted during substrate processing and from wafer-to-wafer, and the second dependent variable, the orifice aspect ratio L/d, can be designed a priori.
  • the aspect ratio (although varying during processing due to plasma erosion of the orifice) is generally not controllable during the processing of a single wafer.
  • Changes to C D can be achieved via changes to the injection total pressure (or mass flow rate). For example, an increase in the injection total pressure (or an increase in the mass flow rate) can cause an increase in the discharge coefficient.
  • the adjustment of C D is described in greater detail below.
  • the third variable, the relative spacing ⁇ s/h can be adjusted during substrate processing and from substrate-to-substrate through changes to h via vertical translation of substrate holder 30 using translation device 36.
  • the fourth variable, the (background) chamber Knudsen number Kric can be adjusted during substrate processing and from substrate-to-substrate. Changes to ric can be affected through changes either to the spacing h, and/or the (background) chamber pressure via translation device 36 and mass flow rate and/or vacuum pump throttle valve setting coupled with chamber pressure sensor 49, respectively.
  • FIG. 9 presents a plan view of a gas injection plate 20 comprising a plurality of gas injection orifices through which process gas 25 flows, wherein the orifices are aligned preferably in a hexagonal pattern such that the spacing ( ⁇ s) 400 between any given orifice and an adjacent (surrounding) orifice is the same.
  • the (background) chamber Knudsen number Kn c is preferably selected such that the full-width half maximum 5 FW H M of PDF( ⁇ ) is approximately equivalent to twice the feature acceptance half-angle 2 ⁇ f in order to optimize the efficiency of mass transport into etch or deposition features.
  • the design of the gas injection plate 20 can uniformly maximize the number of atoms/molecules moving substantially normal to the surface of substrate 35 within plus or minus an angular range 310. For example, by maximizing both the number of atoms/molecules local to the surface of substrate 35 and the probability of finding an atom/molecule moving in a direction substantially normal to the surface of substrate 35, the plasma process can be optimized.
  • the array of gas injection orifices continuously injects a process gas (i.e. C F 8 ) diluted with an inert gas (e.g., argon) into the processing region 12.
  • a process gas i.e. C F 8
  • an inert gas e.g., argon
  • a gas specie process recipe can include 300 seem argon, 5 seem C 4 F 8 and 10 seem oxygen.
  • the gas injection orifices can be spaced every one (1) millimeter in a hexagonal pattern, hence, leading to a uniform, directional flow near the surface of the substrate 35 optimized for normal incidence plus or minus one (1) degree (e.g. one (1) degree is less than the requirement suitable for 12:1 aspect ratio feature etch or deposition).
  • the gas injection orifice spacing ( ⁇ s) 400 is determined to be one (1) mm for a distance h between the gas injection plate 20 and the exposed surface of substrate 35 of 25 mm (or one inch).
  • the sonic orifice, divergent nozzle, or simple orifice, as described in FIG.s 5A, 5B, and 5C, can be fabricated using a wide range of materials such as stainless steel, aluminum, alumina, silicon, quartz, silicon carbide, carbon, etc. When fabricated from aluminum, the orifices/nozzles can be anodized to provide erosion protection from the plasma. Furthermore, the gas injection orifices can be spray coated with Y 2 O 3 to provide a protective barrier.
  • the sonic orifice or divergent nozzle can be manufactured using a broad variety of machining techniques such as diamond bit machining, sonic milling, laser cutting, etc., and, in some applications, orifice fabrication can be amenable to etching. In fact, if the total thickness of the material through which an orifice/nozzle is fabricated is of order a millimeter, orifice etching is within current practical etch rates and reasonable processing times.
  • FIGs. 10 and 11 describe a method for fabricating one or more gas injection orifices in a plate substrate (i.e. 750 micron thick poly-Si wafer).
  • the fabrication steps are illustrated and the procedure is mirrored in the list of steps provided in FIG. 11.
  • the fabrication process is started in step 500.
  • Step 510 proceeds with the application of a photo-resist film 514 to a first surface of the plate substrate 512 and a pattern 516 is transferred to the photo-resist film via photolithography.
  • the patterned feature width can be approximately 1400 microns.
  • a feature 522 is wet etched within the plate substrate 512 by immersing the plate substrate 512 in a KOH/alcohol solution for a period of time dictated by the time required to etch the (isotropic) feature 522 to a depth of approximately 700 micron or greater. Once the wet etch is complete, the photo-resist mask 514 is removed.
  • step 530 the plate substrate 512 is flipped and a second photo-resist film 532 is applied to a second (opposite) surface of plate substrate 512 and a pattern 534 is transferred to the photo-resist film 532 via photolithography.
  • the patterned feature width can be approximately 50 microns.
  • Fabrication in silicon has some additional advantages, since it can be useful in oxide etch processes as a (fluorine) scavenger; however ⁇ it is consumed in time leading to orifice erosion. If so, the performance of the gas injection orifices can be observed by monitoring the injection total pressure using pressure sensor 46 (FIG. 4). A reduction in the injection total pressure can imply erosion of the gas injection orifices (i.e., opening of the gas injection orifices or increase in the minimum cross- sectional area A or reduction in length L). This information can be used to determine the replacement lifetime of a consumable gas injection plate 20. [0056] Referring again to FIG.
  • process gas originates in gas supply 48, is coupled to a mass flow controller 44 to monitor and regulate the flow of process gas, is coupled to the processing region 12 through gas injection plate 20, and is exhausted via vacuum pump 40.
  • controller 42 is coupled to gas supply 48, mass flow controller 44, pressure sensor 46, chamber pressure sensor 49, substrate holder translation device 36 and vacuum pump 40.
  • controller 42 monitors the injection total pressure via pressure sensor 46 and an exemplary time trace of pressure is shown in FIG. 12.
  • FIG. 13 An example of plasma erosion of a gas injection orifice is shown in FIG. 13. i FIG. 13, a (cleaved) cross-section of a gas injection orifice, similar to the one depicted in FIG. 3, is shown where the left end of the orifice has been eroded.
  • a decrease in the orifice length L corresponds to a decrease in the orifice aspect ratio L/d, which, in turn, leads to an increase of the discharge coefficient.
  • An increase in the discharge coefficient appears as an increase in the effective throat area and translates into a decrease in injection total pressure as shown in FIG. 12 (region 600).
  • an increase in the throat area is also observed as a decrease in the injection total pressure as shown in FIG. 12 (region 610).
  • the former and latter erosion regimes can be distinguished by a change in the slope of the pressure trace of FIG. 12.
  • controller 42 can provide an alert to schedule a replacement of the (consumable) gas injection system components. Controller 42 can also counter the degradation of the gas injection system by altering process gas flow properties to compensate for the variation in the gas injection orifice discharge coefficient and, thereby, extend the lifetime of the consumable.
  • the measured injection total pressure can be related to the
  • theoretical (or isentropic) mass flow rate By further recording the (real) mass flow rate at the mass flow rate controller 44, a ratio of the real mass flow rate to the isentropic mass flow rate provides an average discharge coefficient for the gas injection system.
  • the orifice aspect ratio L/d decreases, and subsequently, when the injection total pressure decreases (FIG. 12), the orifice Knudsen number Kn increases. Due to the decreasing aspect ratio L/d and increasing Knudsen number Kn, the discharge coefficient changes since, as described with reference to FIG. 6, the discharge coefficient is a function of the orifice aspect ratio L/d and the Knudsen number Kn.
  • Such a variation in the discharge coefficient can be observed as a movement across characteristics (700 and 710) shown in FIG. 14.
  • a gas injection system is designed to operate at a first point 720 on a first characteristic 700.
  • the operating point shifts from first point 720 on the first characteristic 700 to second point 730 on second characteristic 710.
  • the second point 730 can have a discharge coefficient greater than (as illustrated in FIG. 14) or less than the discharge coefficient of the first point 720.
  • controller 42 by decreasing the mass flow rate to further decrease the injection total pressure, controller 42 moves the operating point from second point 730 on second characteristic 710 to third point 740 on second characteristic 710, and return to the design discharge coefficient of value indicated by the (short) dashed line 750.
  • the gas injection system discharge coefficient can be held constant and consequently the material processing system 1 can extend use of gas injection consumables prior to replacement (as long as the process mass flow rate is not substantially varied beyond control limits set for the process recipe).

Abstract

Cette invention concerne un procédé et un système reposant sur l'emploi d'orifices calibrés de forme déterminée (tels que des orifices calibrés soniques et simples ou des orifices divergents) dans le système d'injection de gaz dans le cadre d'un système de traitement par plasma. L'emploi de tels orifices permet d'améliorer la directionalité du flux de gaz. Cette amélioration est tout particulièrement intéressante pour le traitement de semi-conducteurs à rapport de forme élevé.
PCT/US2002/016583 2001-06-29 2002-06-20 Dispositif d'injection de gaz dirige pour traitement de semi-conducteurs WO2003002860A2 (fr)

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Application Number Priority Date Filing Date Title
JP2003508816A JP4504012B2 (ja) 2001-06-29 2002-06-20 半導体処理のための方向付けられたガスの射出装置
US10/482,210 US7217336B2 (en) 2002-06-20 2002-06-20 Directed gas injection apparatus for semiconductor processing
AU2002352262A AU2002352262A1 (en) 2001-06-29 2002-06-20 Directed gas injection apparatus for semiconductor processing

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US30141301P 2001-06-29 2001-06-29
US60/301,413 2001-06-29

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AU2002352262A1 (en) 2003-03-03
JP2004531903A (ja) 2004-10-14
WO2003002860A3 (fr) 2003-03-20
JP4504012B2 (ja) 2010-07-14

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