WO2002099532A1 - Procede de fabrication d'un masque a l'aide d'un masque perdu - Google Patents

Procede de fabrication d'un masque a l'aide d'un masque perdu Download PDF

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Publication number
WO2002099532A1
WO2002099532A1 PCT/KR2001/000963 KR0100963W WO02099532A1 WO 2002099532 A1 WO2002099532 A1 WO 2002099532A1 KR 0100963 W KR0100963 W KR 0100963W WO 02099532 A1 WO02099532 A1 WO 02099532A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
making
metal layer
wasted
pellicle
Prior art date
Application number
PCT/KR2001/000963
Other languages
English (en)
Inventor
Junho Han
Original Assignee
Han Mask Co.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Han Mask Co. filed Critical Han Mask Co.
Priority to PCT/KR2001/000963 priority Critical patent/WO2002099532A1/fr
Publication of WO2002099532A1 publication Critical patent/WO2002099532A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Definitions

  • the present invention relates to regeneration of wasted mask, and,
  • the semiconductor element what is called magic stone in the 20 century
  • the present invention is for reducing a loss due to a wasted mask of the past, and is for offering a method for making a mask by using
  • FIG. 1 shows a cross-sectional view of the structure for general semi
  • FIG. 2 shows a cross-sectional view of the structure for phase difference
  • FIG. 3 shows a flow view of the method for making a mask in accordance
  • FIG. 4 shows a flow view of the method for making a mask in accordance
  • FIG 5 shows a comparing view of the mask made according to the present
  • a semiconductor mask patterns desired pattern by depositing an opaque metal layer on a quartz surface and is made by transferring it on
  • Said mask is wasted when a pattern or product is changed. And, the process
  • the present invention is about a method for making a regenerated mask
  • the wasted mask should be patterned in manufacture processing, as a wasted mask.
  • the wasted mask should be patterned in manufacture processing, as a wasted mask.
  • reusable mask is called as comprehensive meaning including not only waste
  • the method for making a mask by the present invention passes through the
  • a pellicle is an outer cover or a layer playing a role as the film reflecting
  • silicone for example if not called as a pellicle solidly, which is as function as a
  • the pattern is patterned according to desired design.
  • invention can include a step of polishing a mask substrate, in other words, the
  • an original mask is a general mask as
  • a method of removing a pellicle is
  • chrome and chrome oxide is removed with
  • chrome and chrome oxide can be etched as the same etchant.
  • the cleaning processing can use a supersonic cleaning, a
  • the transmittance is controlled equal smaller than 0.3% by using ultrasonic wave of
  • Fig5 is the microscope photos about the pattern of mask made according to
  • patterned pattern is no different like that you can know easily from the comparison.
  • chrome and chrome oxide is deposited by metal layer.
  • the chrome oxide has an
  • photosensitive liquid is deposited on the surface of a metal layer, the needed
  • pattern is patterned on the photosensitive film, and only pattern needed by
  • the photosensitive film is left and the others is removed.
  • the pattern can be patterned
  • Fig 2 is the flow view, which
  • processing with the first embodiment is passed through, and a test step for
  • the polishing step is passed through when the quartz
  • the deposit process of a metal layer (109) is progressed directly such as explanation of the first embodiment when the quartz surface is not damaged in the
  • phase difference mask in the phase difference mask is etched as minute thickness smaller than l ⁇ m, a
  • discriminating a regenerated mask easily can be included. This course can be added before or after appropriate step after said course of removing a metal layer.
  • This mark can be marked easily with the method of marking a mark on a
  • the quality of material of the mask is consisted of quartz material, crystal
  • the quartz surface should not cause

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un masque pour former un motif microscopique dans des semi-conducteurs, à l'aide d'un masque perdu. Ce procédé consiste à retirer la pellicule sur le masque, à retirer également la couche de métal sur ce dernier et à déposer une nouvelle couche de métal sur la surface de quartz.
PCT/KR2001/000963 2001-06-05 2001-06-05 Procede de fabrication d'un masque a l'aide d'un masque perdu WO2002099532A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2001/000963 WO2002099532A1 (fr) 2001-06-05 2001-06-05 Procede de fabrication d'un masque a l'aide d'un masque perdu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2001/000963 WO2002099532A1 (fr) 2001-06-05 2001-06-05 Procede de fabrication d'un masque a l'aide d'un masque perdu

Publications (1)

Publication Number Publication Date
WO2002099532A1 true WO2002099532A1 (fr) 2002-12-12

Family

ID=19198401

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2001/000963 WO2002099532A1 (fr) 2001-06-05 2001-06-05 Procede de fabrication d'un masque a l'aide d'un masque perdu

Country Status (1)

Country Link
WO (1) WO2002099532A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1630256A1 (fr) * 2004-07-30 2006-03-01 United Technologies Corporation Antiadhesifs dispositifs de masquage et procédé de leurs préparation

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010068561A (ko) * 2000-01-06 2001-07-23 윤여선 마스크 재생방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010068561A (ko) * 2000-01-06 2001-07-23 윤여선 마스크 재생방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1630256A1 (fr) * 2004-07-30 2006-03-01 United Technologies Corporation Antiadhesifs dispositifs de masquage et procédé de leurs préparation
US8349086B2 (en) 2004-07-30 2013-01-08 United Technologies Corporation Non-stick masking fixtures and methods of preparing same
US8603582B2 (en) 2004-07-30 2013-12-10 United Technologies Corporation Non-stick masking fixtures and methods of preparing same

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