WO2002098788A3 - Applications of a strain-compensated heavily doped etch stop for silicon structure formation - Google Patents

Applications of a strain-compensated heavily doped etch stop for silicon structure formation Download PDF

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Publication number
WO2002098788A3
WO2002098788A3 PCT/US2002/017216 US0217216W WO02098788A3 WO 2002098788 A3 WO2002098788 A3 WO 2002098788A3 US 0217216 W US0217216 W US 0217216W WO 02098788 A3 WO02098788 A3 WO 02098788A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
compensated
strain
applications
etch stop
Prior art date
Application number
PCT/US2002/017216
Other languages
French (fr)
Other versions
WO2002098788A2 (en
Inventor
Robert D Horning
David W Burns
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of WO2002098788A2 publication Critical patent/WO2002098788A2/en
Publication of WO2002098788A3 publication Critical patent/WO2002098788A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00595—Control etch selectivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0164—Controlling internal stress of deposited layers by doping the layer

Abstract

A method of making a silicon micromechanical structure, from a lightly doped silicon substrate having less than < 5 x 1019 cm-3 boron therein. A p+ layer having a boron content of greater than 7 x 1019 cm-3 and a germanium content of about 1 x 1021 cm-3 is placed on the substrate. A mask is formed on the second side, followed by etching to the p+ layer. An insulator is put on the p+ layer and an electronic component is fabricated thereon. Preferred micromechanical structures are pressure sensors, cantilevered accelerometers, and dual web biplane accelerometers. Preferred electronic components are dielectrically isolated piezoresistors and resonant microbeams. The method may include the step of forming a lightly doped layer on the p+ layer to form a buried p+ layer prior to etching.
PCT/US2002/017216 2001-06-04 2002-06-04 Applications of a strain-compensated heavily doped etch stop for silicon structure formation WO2002098788A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/873,931 2001-06-04
US09/873,931 US20020179563A1 (en) 2001-06-04 2001-06-04 Application of a strain-compensated heavily doped etch stop for silicon structure formation

Publications (2)

Publication Number Publication Date
WO2002098788A2 WO2002098788A2 (en) 2002-12-12
WO2002098788A3 true WO2002098788A3 (en) 2003-10-09

Family

ID=25362628

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/017216 WO2002098788A2 (en) 2001-06-04 2002-06-04 Applications of a strain-compensated heavily doped etch stop for silicon structure formation

Country Status (2)

Country Link
US (1) US20020179563A1 (en)
WO (1) WO2002098788A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000004357A1 (en) * 1998-07-15 2000-01-27 Smithsonian Astrophysical Observatory Epitaxial germanium temperature sensor
US7214324B2 (en) * 2005-04-15 2007-05-08 Delphi Technologies, Inc. Technique for manufacturing micro-electro mechanical structures
US7179668B2 (en) * 2005-04-25 2007-02-20 Delphi Technologies, Inc. Technique for manufacturing silicon structures
GB2490546A (en) * 2011-05-06 2012-11-07 Univ Warwick Semiconductor structure
CN102815661A (en) * 2011-06-07 2012-12-12 无锡华润华晶微电子有限公司 Preparation method of silicon film
CN102817082B (en) * 2011-06-08 2016-06-01 无锡华润华晶微电子有限公司 A kind of preparation method of silicon fiml
US9021887B2 (en) 2011-12-19 2015-05-05 Infineon Technologies Ag Micromechanical semiconductor sensing device
CN102616732A (en) * 2012-04-09 2012-08-01 上海先进半导体制造股份有限公司 Method for manufacturing impending semiconductor film structures and sensor units
CN105444926B (en) * 2014-07-08 2018-05-25 中航（重庆）微电子有限公司 MEMS resonant formula pressure sensor and manufacturing process
CN104900714B (en) * 2015-05-29 2018-08-03 歌尔股份有限公司 A kind of manufacturing method and pressure sensor of pressure sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357899A (en) * 1991-10-08 1994-10-25 International Business Machines Corporation Epitaxial silicon membranes
WO1998028721A1 (en) * 1996-12-10 1998-07-02 Elsdale Limited Data acquisition and data storage medium output system, data acquisition device therefor and method of operating the system
US5817942A (en) * 1996-02-28 1998-10-06 The Charles Stark Draper Laboratory, Inc. Capacitive in-plane accelerometer
EP0955668A2 (en) * 1998-05-08 1999-11-10 Rockwell Science Center, LLC Process for manufacture of micro electromechanical devices having high electrical isolation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0799495A4 (en) * 1994-11-10 1999-11-03 Lawrence Semiconductor Researc Silicon-germanium-carbon compositions and processes thereof
US6689211B1 (en) * 1999-04-09 2004-02-10 Massachusetts Institute Of Technology Etch stop layer system
US7227176B2 (en) * 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5357899A (en) * 1991-10-08 1994-10-25 International Business Machines Corporation Epitaxial silicon membranes
US5817942A (en) * 1996-02-28 1998-10-06 The Charles Stark Draper Laboratory, Inc. Capacitive in-plane accelerometer
WO1998028721A1 (en) * 1996-12-10 1998-07-02 Elsdale Limited Data acquisition and data storage medium output system, data acquisition device therefor and method of operating the system
EP0955668A2 (en) * 1998-05-08 1999-11-10 Rockwell Science Center, LLC Process for manufacture of micro electromechanical devices having high electrical isolation

Also Published As

Publication number Publication date
WO2002098788A2 (en) 2002-12-12
US20020179563A1 (en) 2002-12-05

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