CN102616732A - Method for manufacturing impending semiconductor film structures and sensor units - Google Patents
Method for manufacturing impending semiconductor film structures and sensor units Download PDFInfo
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- CN102616732A CN102616732A CN2012101019858A CN201210101985A CN102616732A CN 102616732 A CN102616732 A CN 102616732A CN 2012101019858 A CN2012101019858 A CN 2012101019858A CN 201210101985 A CN201210101985 A CN 201210101985A CN 102616732 A CN102616732 A CN 102616732A
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Abstract
The invention provides a method for manufacturing impending semiconductor film structures and sensor units, which is characterized in that through performing a P-type doping process on the front surface of a semiconductor substrate, a first doping layer is formed; and according to a characteristic that the first doping layer has a self-stopped blocking effect on corrosive liquid (namely, a back corrosion process), the thickness of a semiconductor film structure (impending substrate) is accurately controlled through a doping depth, therefore, the dependence on the precise control on corrosion time can be reduced, namely, the process difficulty is reduced, and the process accuracy is improved.
Description
Technical field
The present invention relates to integrated circuit fabrication process, the manufacturing approach of particularly a kind of unsettled semiconductor film membrane structure and sensor unit.
Background technology
(Microelectronic Mechanical Systems MEMS) is the forward position research field of the multidisciplinary intersection that on the microelectric technique basis, grows up to MEMS.Development through decades has become one of great sciemtifec and technical sphere of attracting attention in the world.It relates to multiple subjects such as electronics, machinery, material, physics, chemistry, biology, medical science and technology, has broad application prospects.
In the MEMS device, increasingly use unsettled semiconductor film membrane structure, for example; In some sensor, especially in the sensor of some and temperature correlation, need sensor to be in the unsettled substrate sometimes; Be on the unsettled semiconductor film membrane structure, thus, after encapsulation; The substrate of sensor below contact with the pedestal of encapsulation, but unsettledly contacts with air or vacuum, reaches the purpose of reduction ambient temperature interference.
From the application facet of the sensor, the thickness of the substrate (semiconductive thin film) of the precision of sensor and its below is closely related, and in order to realize higher precision, hopes the thinner thickness of the substrate that this is unsettled; Simultaneously, consider the supporting role of unsettled substrate, hope that again the thickness of the substrate that this is unsettled is thicker for device.Therefore, finally need take all factors into consideration the factor of above-mentioned several respects, select the thickness of suitable unsettled substrate, and produce the unsettled substrate that this confirms thickness through semiconductor technology.
In the prior art; The semiconductor substrate is provided usually, corrodes this semiconductor-based end to form unsettled substrate through the back side, the thickness of unsettled substrate is accurately controlled through etching time; Yet; Thickness evenness often surpasses 10 microns between the ordinary semiconductor substrate sheet, therefore has very big difficulty if form unsettled substrate even, precise thickness (confirming thickness), the extremely difficult control of technology.
Summary of the invention
The object of the present invention is to provide the manufacturing approach of a kind of unsettled semiconductor film membrane structure and sensor unit, to solve in the prior art problem that is difficult to obtain the unsettled substrate of precise thickness through back side etching process.
For solving the problems of the technologies described above, the present invention provides a kind of manufacturing approach of unsettled semiconductor film membrane structure, comprising:
The semiconductor-based end, be provided;
P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
The front and the back side at the said semiconductor-based end form protective layer;
Adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled semiconductor film membrane structure.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, the thickness of said first doped layer is 100 nanometers～20 micron.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, when P type doping process is carried out in the front at the said semiconductor-based end, carry out P type doping process overleaf, form second doped layer.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, when the back side at the said semiconductor-based end forms protective layer, form protective layer in the front.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, the material of said protective layer is one or more in silicon nitride, silica, the silicon oxynitride.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, said protective layer is single layer structure or sandwich construction.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, said P type doping process is diffusion method or ion implantation.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, the doping ion of said P type doping process comprises a kind of in boron, indium, aluminium, the gallium at least.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, the doping ion concentration of said P type doping process is 10
19Cm
-3～10
22Cm
-3
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, the material at the said semiconductor-based end is a monocrystalline silicon.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, the said semiconductor-based end is the semiconductor-based end of single-sided polishing or twin polishing.
Optional, in the manufacturing approach of described unsettled semiconductor film membrane structure, the solution that said etching process adopts is KOH or TMAH.
The present invention also provides a kind of manufacturing approach of unsettled semiconductor film membrane structure, comprising:
The semiconductor-based end, be provided;
The back side at the said semiconductor-based end forms protective layer;
P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
Adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled semiconductor film membrane structure.
The present invention also provides a kind of manufacturing approach of sensor unit, comprising:
The semiconductor-based end, be provided;
P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
The front and the back side at the said semiconductor-based end form protective layer, and said protective layer is an insulating materials;
On the protective layer in front, form sensor unit;
Adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled sensor unit.
Optional, in the manufacturing approach of described sensor unit, said sensor unit is a flow sensor.
Optional, in the manufacturing approach of described sensor unit, said flow sensor comprises heating unit and temperature resistance unit.
Optional, in the manufacturing approach of described sensor unit, said heating unit is respectively one or more with the quantity of temperature resistance unit.
Optional; In the manufacturing approach of described sensor unit, on the protective layer in said front, form after the sensor unit, and adopt photoetching to carry out graphically said semiconductor-based bottom back side; And adopt before the etching process of the back side, also comprise following processing step:
Form the barrier layer, said barrier layer covers and protects said sensor unit.
In the manufacturing approach of unsettled semiconductor film membrane structure provided by the invention and sensor unit,, form first doped layer through P type doping process is carried out in the front of semiconductor substrate; Utilize first doped layer for corrosive liquid; Promptly have from stopping barrier effect, make the thickness of semiconductor film membrane structure (unsettled substrate) accurately control, thereby can reduce for the accurately dependence of control of etching time through doping depth for back side etching process; Promptly reduce technology difficulty, improved the technology accuracy.
Description of drawings
Fig. 1 is the schematic flow sheet of manufacturing approach of the unsettled semiconductor film membrane structure of the embodiment of the invention;
Fig. 2 a～2g is the generalized section of manufacturing approach of the unsettled semiconductor film membrane structure of the embodiment of the invention one;
Fig. 3 a～3d is the generalized section of manufacturing approach of the unsettled semiconductor film membrane structure of the embodiment of the invention two;
Fig. 4 is the schematic flow sheet of manufacturing approach of the sensor unit of the embodiment of the invention;
Fig. 5 a～5e is the generalized section of manufacturing approach of the sensor unit of the embodiment of the invention;
Fig. 6 is the schematic top plan view of the sensor unit shown in Fig. 5 c.
The specific embodiment
Below in conjunction with accompanying drawing and specific embodiment the unsettled semiconductor film membrane structure of the present invention's proposition and the manufacturing approach of sensor unit are done further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is; Provide in the manufacturing approach of a kind of unsettled semiconductor film membrane structure and sensor unit,, form first doped layer through P type doping process is carried out in the front of semiconductor substrate; Utilize first doped layer for corrosive liquid; Promptly have from stopping barrier effect, make the thickness of semiconductor film membrane structure (unsettled substrate) accurately control, thereby can reduce for the accurately dependence of control of etching time through doping depth for back side etching process; Promptly reduce technology difficulty, improved the technology accuracy.
Please refer to Fig. 1, it is the schematic flow sheet of manufacturing approach of the unsettled semiconductor film membrane structure of the embodiment of the invention, and for explaining conveniently, hereinafter is that example is set forth the explanation flow process with the silicon base, needs to understand, and below explanation is equally applicable to other and contains silicon base.As shown in Figure 1, the manufacturing approach of said unsettled semiconductor film membrane structure comprises the steps:
S10: the semiconductor-based end is provided;
S11: P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
S12: the front and the back side at the said semiconductor-based end form protective layer;
S13: adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled semiconductor film membrane structure.
What need explanation is that the order of step S12 and step S11 is also commutative.Subsequent, will be described further through the manufacturing approach of embodiment one and two pairs of unsettled semiconductor film membrane structures of embodiment.Wherein, in the manufacturing approach of the unsettled semiconductor film membrane structure that embodiment one is provided, form protective layer at the back side at the semiconductor-based end earlier, then P type doping process is carried out in the front of semiconductor substrate, form first doped layer; In the manufacturing approach of the unsettled semiconductor film membrane structure that embodiment two is provided, earlier P type doping process is carried out in the front of semiconductor substrate, form first doped layer, then form protective layer at the back side at the semiconductor-based end.
Specific as follows:
Embodiment one
Please refer to Fig. 2 a～2g, it is the generalized section of manufacturing approach of the unsettled semiconductor film membrane structure of the embodiment of the invention one.
At first, shown in Fig. 2 a, be provided the semiconductor-based end 100.At this, the said semiconductor-based end 100 is a silicon base, and preferred, the material of said silicon base is a monocrystalline silicon.At this, consider that monocrystalline silicon has better supporting role, mechanical stress etc.Certainly, in other embodiments of the invention, the material at the said semiconductor-based end 100 also can be polysilicon, non-crystalline silicon etc.In the present embodiment; The thickness at the said semiconductor-based end 100 is 200 microns～1000 microns; The present invention does not limit the thickness at the said semiconductor-based end 100, and it also can be thicker or thinner, and the unsettled semiconductive thin film thickness of structure that will form to be thicker than gets final product.In addition; In the present embodiment, the semiconductor-based end that the said semiconductor-based end 100 is single-sided polishing or twin polishing, thus; Can guarantee the uniformity of doped layer (first doped layer/second doped layer) bed thickness of follow-up formation, thus the final quality that improves the unsettled semiconductor film membrane structure that forms.
Then, shown in Fig. 2 b, form protective layer 101 at the back side at the said semiconductor-based end 100.Preferably, the material of said protective layer 101 is one or more in silicon nitride, silica, the silicon oxynitride.When the material of said protective layer 101 was a kind of in silicon nitride, silica, the silicon oxynitride, said protective layer 101 was a single layer structure; When the material of said protective layer 101 was multiple in silicon nitride, silica, the silicon oxynitride, said protective layer 101 was a kind of sandwich construction, for example, is a kind of double-decker, comprises silicon nitride layer and is positioned at the silicon oxide layer on the said silicon nitride layer.
Then, shown in Fig. 2 c, P type doping process is carried out in the front at the said semiconductor-based end 100, formed first doped layer 102, wherein, the doping ion of said P type doping process comprises in one in boron, indium, aluminium, the gallium at least.Preferably, the doping ion boracic of said P type doping process certainly, in other embodiments of the invention, also can be other ions that mixes.The doping content of said boron ion is 10
19Cm
-3～10
22Cm
-3, preferred, the doping content of said boron ion is 10
19Cm
-3, 4*10
19Cm
-3, 8*10
19Cm
-3, 1.1*10
20Cm
-3, 2*10
20Cm
-3, 5*10
20Cm
-3, 10
21Cm
-3, 6*10
21Cm
-3At this, mainly considered formed first doped layer 102 for follow-up back side etching process stop certainly the effect, good more more by force to stop effect certainly.The method of mixing can be an ion implantation, also can be diffusion method.If employing ion implantation, the doping depth of said P type doping process are 10 nanometers～2500 nanometers, the thickness of promptly formed first doped layer 102 is 10 nanometers～2500 nanometers.If employing diffusion method, the doping depth of said P type doping process are 200 nanometers～20 micron, the thickness of promptly formed first doped layer 102 is 200 nanometers～20 micron.At this, the unsettled semiconductive thin film thickness of structure that forms with follow-up hope is a benchmark, carries out P type doping process, obtains first doped layer 102 of specific doping depth.
Then; Shown in Fig. 2 d; In the present embodiment, on said first doped layer 102, form layer protective layer 103 (, also can be called formation second protective layer 103) at this in order to distinguish mutually with protective layer 101 before; Its objective is in order in subsequent technique, effectively to protect first doped layer 102, prevent that follow-up etching process from causing damage to first doped layer 102.
Then, shown in Fig. 2 e, adopt photoetching to carry out graphically to the back side at the said semiconductor-based end 100.Concrete, adopt photoetching process, go up at said protective layer 101 (same, as, can be called first protective layer 101) and form opening 104 at this in order to distinguish mutually with protective layer 103.The openings of sizes of said opening 104 is by the length decision of the unsettled semiconductor film membrane structure of hoping to form, and the application does not do qualification to this
Shown in Fig. 2 f,, obtain unsettled semiconductor film membrane structure (doped layer 102 is unsettled even win) to the execution back side etching process of the said semiconductor-based ends 100.Concrete, the corrosive liquid of said back side etching process is TMAH solution (tetramethyl ammonium hydroxide solution) or KOH solution (potassium hydroxide solution).Conditions such as the purity of said TMAH solution or KOH solution, concentration, temperature can be chosen according to the existing processes condition, i.e. the present invention does not limit for the condition of corrosive liquid.Certainly, in the condition of corrosive liquid and need after the thickness at the semiconductor-based end 100 of corrosion limits, the time of corrosion also can correspondingly confirm that this is prior art.At this; It is emphasized that since the present invention utilized first doped layer 102 stop effect certainly, when time of corrosion not accurately during control; The etching time that for example needs is 8 hours; Because the restriction of control technology, reality has been corroded 8.5 hours, and it also can access the unsettled semiconductor film membrane structure of precise thickness.Cause is when corroding to first doped layer 102 the follow-up corrosive effect that do not take place basically.And if adopt the scheme of mentioning in the background technology; Because of not playing from the rete that stops to act on; In case the time of corrosion is accurately control not; (promptly under the situation that same etching time surpasses, the unsettled semiconductive thin film thickness of structure that obtains will much smaller than the unsettled semiconductive thin film thickness of structure of expection) just will take place to change greatly in the thickness of resulting unsettled semiconductor film membrane structure (unsettled substrate), promptly can not get the unsettled semiconductor film membrane structure of precise thickness.
It is thus clear that; The manufacturing approach of the unsettled semiconductor film membrane structure that present embodiment provides can reduce for the accurately dependence of control of etching time; Promptly reduce technology difficulty, improved the technology accuracy, thereby can obtain the unsettled semiconductor film membrane structure (unsettled substrate) of precise thickness.
In the present embodiment, also comprise further replenishment of process step.Shown in Fig. 2 g, chemical grinding technology (CMP) is carried out at the front and the back side at the said semiconductor-based end 100, to remove first protective layer 101 and second protective layer 103.
Embodiment two
Please refer to Fig. 3 a～3d, it is the generalized section of manufacturing approach of the unsettled semiconductive thin film of the embodiment of the invention two.
At first, shown in Fig. 3 a, be provided the semiconductor-based end 200, the front at the said semiconductor-based end 200 and the back side all are formed with first doped layer 201 and second doped layer 201 ' through P type doping process.At this, form first doped layer 201 in the front at the semiconductor-based end 200 simultaneously through two-sided doping process, the back side forms second doped layer 201 '.Thus, technology can be simplified, the back side at the semiconductor-based end 200 can be effectively protected simultaneously again.
Then; Shown in Fig. 3 b; Utilize the two-sided mode of deposition simultaneously to form protective layer, promptly form first protective layer 202 and second protective layer 202 ' simultaneously, wherein at the front and the back side at the semiconductor-based end 200; Said first protective layer 202 covers first doped layer 201, and said second protective layer 202 ' covers second doped layer 201 '.Thus, technology can be simplified, the back side at the semiconductor-based end 200 can be effectively protected simultaneously again.
Then, shown in Fig. 2 c, adopt photoetching to carry out graphically to the back side at the said semiconductor-based end 200, concrete, go up formation opening 203 at second doped layer 201 ' and second protective layer 202 ' at the back side, the semiconductor-based ends 200.
At last, shown in Fig. 3 d,, obtain unsettled semiconductor film membrane structure (doped layer 201 is unsettled even win) to the execution back side etching process of the said semiconductor-based ends 200.
The difference of present embodiment and embodiment one is, forms first doped layer through P type doping process earlier, then forms protective layer, simultaneously, also forms doped layer through P type doping process at the back side at the semiconductor-based end, thus, and can the semiconductor-based end of better protection.The not mentioned part of present embodiment can be corresponding reference implementation example one, the application repeats no more to this.
Embodiment three
A kind of manufacturing approach of sensor unit is provided in the present embodiment.Based on the principle identical with embodiment one and embodiment two; That promptly utilizes the formed rete of P type doping process stops effect certainly, to form the unsettled sensor unit of precise thickness, thus; Formed sensor unit precision is high; The substrate of its below simultaneously contact with the pedestal of encapsulation, but unsettledly contacts with air or vacuum, reaches the purpose of reduction ambient temperature interference.
Present embodiment is the basis with embodiment one resulting unsettled semiconductor film membrane structure, forms a kind of unsettled sensor unit accordingly.Please refer to Fig. 4, it is the schematic flow sheet of manufacturing approach of the sensor unit of the embodiment of the invention.As shown in Figure 4, the manufacturing approach of said sensor unit comprises the steps:
S40: the semiconductor-based end is provided;
S41: P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
S42: the front and the back side at the said semiconductor-based end form protective layer, and said protective layer is an insulating materials;
S43: on the protective layer in front, form sensor unit;
S44: adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled sensor unit.
Concrete, please refer to Fig. 5 a～5e, it is the generalized section of manufacturing approach of the sensor unit of the embodiment of the invention.
At first, shown in Fig. 5 a, be provided the semiconductor-based end 300; The front at the said semiconductor-based end 300 is formed with first doped layer 302, and simultaneously, its back side is formed with first protective layer 301; At this, utilized the technology (promptly having adopted step S10 and the S11 of embodiment one) of embodiment one.
Then, shown in Fig. 5 b, on said first doped layer 302, form protective layer 303, the material of said protective layer 303 is an insulating materials, can be in silicon nitride, silica, the silicon oxynitride one or more.In the present embodiment, utilize said protective layer 303 to isolate for follow-up formed sensor unit, at this, do not do qualification for the thickness of this protective layer 303, preferred, the thickness of said protective layer 303 is 10 dusts～5500 dusts.Concrete, said protective layer 303 can pass through technologies such as chemical vapor deposition method, physical gas-phase deposition and form.
Then, shown in Fig. 5 c, on said protective layer 303, form sensor.Preferably, said sensor is a flow sensor, and it comprises heating unit 304 and temperature resistance unit 305, and wherein, the quantity of said heating unit 304 and temperature resistance unit 305 is respectively one or more.When the quantity of said heating unit 304 and temperature resistance unit 305 is when a plurality of; Can be spaced with the mode of a heating unit 304, a temperature resistance unit 305; Can arrange with the mode that heating unit 304 both sides are provided with a plurality of temperature resistance unit 305, the present invention does not do qualification to this yet.
Please refer to Fig. 6, it is the schematic top plan view of sensor unit in the present embodiment.At this, for illustrated clear, only show the schematic top plan view of sensor unit, rete such as promptly not shown first doped layer 302, protective layer 303.In order to make sensor unit to be connected with other devices easily, perhaps be convenient to the device performance of testing sensor unit, when forming sensor unit, form a plurality of metal gaskets 306.Concrete, all be formed with metal gasket 306 on heating unit 304 and the temperature resistance unit 305.
The concrete method that forms sensor unit comprises, on said protective layer 303, forms metal level; Said metal level is carried out photoetching and etching technics, thereby form sensor unit.Wherein, the material of said metal level can be Pt etc.Present embodiment stresses that mainly later use has the rete that stops to act on certainly and forms unsettled sensor unit; Thereby; Formed sensor unit just has high-precision performance; How concrete this device forms, its structure how, existing any one mode capable of using, the present invention does not do qualification to this.
In the present embodiment, then, shown in Fig. 5 d, form barrier layer 307, said barrier layer 307 covers said sensor unit, can effectively protect formed sensor unit through said barrier layer 307, thereby improves the reliability of device.In other embodiments of the invention, also can not form said barrier layer, directly carry out next step.
Then, shown in Fig. 5 e,, obtain unsettled sensor unit to the execution back side etching process of the said semiconductor-based ends 300.Concrete; To the execution back side etching process of the said semiconductor-based ends 300; Make that the substrate (instigating win doped layer 302 and protective layer 303 at this) of sensor unit below is unsettled, promptly sensor unit is positioned on the unsettled substrate, thereby obtains unsettled sensor unit.This processing step obtains unsettled semiconductive thin film structural similarity with enforcement one; Promptly utilize first doped layer that has from stopping to act on; Obtain the unsettled substrate of precise thickness, thus can be corresponding reference implementation example one (also can corresponding reference implementation example two), present embodiment repeats no more to this step.
Foregoing description only is the description to preferred embodiment of the present invention, is not any qualification to the scope of the invention, and any change, modification that the those of ordinary skill in field of the present invention is done according to above-mentioned disclosure all belong to the protection domain of claims.
Claims (18)
1. the manufacturing approach of a unsettled semiconductor film membrane structure is characterized in that, comprising:
The semiconductor-based end, be provided;
P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
The front and the back side at the said semiconductor-based end form protective layer;
Adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled semiconductor film membrane structure.
2. the manufacturing approach of unsettled semiconductor film membrane structure as claimed in claim 1 is characterized in that, the thickness of said first doped layer is 100 nanometers～20 micron.
3. the manufacturing approach of unsettled semiconductor film membrane structure as claimed in claim 1 is characterized in that, when P type doping process is carried out in the front at the said semiconductor-based end, carries out P type doping process overleaf, forms second doped layer.
4. the manufacturing approach of unsettled semiconductor film membrane structure as claimed in claim 1 is characterized in that, when the back side at the said semiconductor-based end forms protective layer, forms protective layer in the front.
5. the manufacturing approach of unsettled semiconductor film membrane structure as claimed in claim 1 is characterized in that, the material of said protective layer is one or more in silicon nitride, silica, the silicon oxynitride.
6. the manufacturing approach of unsettled semiconductor film membrane structure as claimed in claim 1 is characterized in that, said protective layer is single layer structure or sandwich construction.
7. like the manufacturing approach of each the described unsettled semiconductor film membrane structure in the claim 1 to 6, it is characterized in that said P type doping process is diffusion method or ion implantation.
8. like the manufacturing approach of each the described unsettled semiconductor film membrane structure in the claim 1 to 6, it is characterized in that the doping ion of said P type doping process comprises a kind of in boron, indium, aluminium, the gallium at least.
9. the manufacturing approach of unsettled semiconductor film membrane structure as claimed in claim 8 is characterized in that, the doping ion concentration of said P type doping process is 10
19Cm
-3～10
22Cm
-3
10. like the manufacturing approach of each the described unsettled semiconductor film membrane structure in the claim 1 to 6, it is characterized in that the material at the said semiconductor-based end is a monocrystalline silicon.
11. the manufacturing approach like each the described unsettled semiconductor film membrane structure in the claim 1 to 6 is characterized in that, the said semiconductor-based end is the semiconductor-based end of single-sided polishing or twin polishing.
12. the manufacturing approach like each the described unsettled semiconductor film membrane structure in the claim 1 to 6 is characterized in that, the solution that said etching process adopts is KOH or TMAH.
13. the manufacturing approach of a unsettled semiconductor film membrane structure is characterized in that, comprising:
The semiconductor-based end, be provided;
The back side at the said semiconductor-based end forms protective layer;
P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
Adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled semiconductor film membrane structure.
14. the manufacturing approach of a sensor unit is characterized in that, comprising:
The semiconductor-based end, be provided;
P type doping process is carried out in the front at the said semiconductor-based end, formed first doped layer;
The front and the back side at the said semiconductor-based end form protective layer, and said protective layer is an insulating materials;
On the protective layer in front, form sensor unit;
Adopt photoetching to carry out graphically to said semiconductor-based bottom back side, and adopt back side etching process, obtain unsettled sensor unit.
15. the manufacturing approach of sensor unit as claimed in claim 14 is characterized in that, said sensor unit is a flow sensor.
16. the manufacturing approach of sensor unit as claimed in claim 15 is characterized in that, said flow sensor comprises heating unit and temperature resistance unit.
17. the manufacturing approach of sensor unit as claimed in claim 16 is characterized in that, said heating unit is respectively one or more with the quantity of temperature resistance unit.
18. the manufacturing approach of sensor unit as claimed in claim 14; It is characterized in that, on the protective layer in said front, form after the sensor unit, and adopt photoetching to carry out graphically said semiconductor-based bottom back side; And adopt before the etching process of the back side, also comprise following processing step:
Form the barrier layer, said barrier layer covers and protects said sensor unit.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108117041A (en) * | 2017-12-22 | 2018-06-05 | 中国科学院半导体研究所 | The preparation method of movable micro-nano structure based on dense boron-doping silicon |
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| CN101718667A (en) * | 2009-12-08 | 2010-06-02 | 西安交通大学 | Density sensor chip based on micro electro mechanical system technology and preparation method thereof |
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| CN108117041A (en) * | 2017-12-22 | 2018-06-05 | 中国科学院半导体研究所 | The preparation method of movable micro-nano structure based on dense boron-doping silicon |
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