CN104900714B - A kind of manufacturing method and pressure sensor of pressure sensor - Google Patents
A kind of manufacturing method and pressure sensor of pressure sensor Download PDFInfo
- Publication number
- CN104900714B CN104900714B CN201510289692.0A CN201510289692A CN104900714B CN 104900714 B CN104900714 B CN 104900714B CN 201510289692 A CN201510289692 A CN 201510289692A CN 104900714 B CN104900714 B CN 104900714B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229930013930 alkaloid Natural products 0.000 description 2
- 150000003797 alkaloid derivatives Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- -1 matter Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Abstract
The invention discloses a kind of manufacturing method of pressure sensor and pressure sensors, etch inner cavity on substrate；Heavily doped region is formed on the surface of soi wafer either epitaxial wafer, lightly doped district and forms insulating layer on the surface of soi wafer or epitaxial wafer；Soi wafer or epitaxial wafer are formed with heavily doped region, the side of lightly doped district is bonded in the upper end of substrate；Soi wafer or epitaxial wafer are thinned to scheduled thickness.The manufacturing method of the present invention, using first preparing varistor, then the mode of bonding and wafer thinning, so that varistor has higher thickness evenness, so as to avoid after first bonding and wafer thinning, the error for the varistor resistance value that plastic deformation introduces occurs for varistor film layer in injection step, the accuracy that ensure that varistor is conducive to the miniaturization manufacture of the performance for improving pressure sensor and sensor.
Description
Technical field
The present invention relates to fields of measurement, more particularly, to a kind of sensor more particularly to a kind of pressure sensor；This
Invention further relates to a kind of manufacturing method of pressure sensor.
Background technology
What pressure sensor utilized is the piezoresistive effect of single crystal silicon material, has been widely used in the fields such as air pressure, height
Measurement and control in.After the effect by power, resistivity changes single crystal silicon material, can be obtained by measuring circuit
To the electric signal for being proportional to power variation.
The pressure sensor produced in enormous quantities and used at present is all that p-type varistor is produced in N-type silicon substrate,
Usual way is that heavily doped region, lightly doped district are formed by way of ion implanting in monocrystalline silicon membrane on piece.Pressure sensing at present
Device after first wafer bonding is thinned, then is made into varistor during production.Such production technology is easy to
The plastic deformation for causing diaphragm makes final varistor off-design value, the asymmetric phenomenon of pressure drag occurs, seriously affect
The performance of sensor.Moreover, the process so that heavily doped region, lightly doped district are located at the outer surface one of varistor diaphragm
Side is in direct contact with external environment.When the pressure sensor is operated in the environment of inclement condition, extraneous soda acid object
The impurity such as matter, dust can affect varistor, greatly reduce the degree of reliability of pressure sensor.
Invention content
It is an object of the present invention to provide a kind of new solutions of the manufacturing method of pressure sensor.
According to the first aspect of the invention, a kind of manufacturing method of pressure sensor is provided, is included the following steps：
A) inner cavity is etched on substrate；
B) heavily doped region, lightly doped district and in soi wafer or extension are formed on the surface of soi wafer either epitaxial wafer
Insulating layer is formed on the surface of piece；
C) soi wafer or epitaxial wafer are formed with heavily doped region, the side of lightly doped district is bonded in the upper end of substrate, and make
It is suspended at the top of substrate inner cavity；
E) side of soi wafer or epitaxial wafer far from heavily doped region, lightly doped district is thinned to scheduled thickness；
F) perforation is formed to the groove of heavily doped region on the surface of soi wafer or epitaxial wafer；
G) metal portion of connection heavily doped region is set in the groove.
Preferably, in the step a), inner cavity is etched by dry method or wet method on substrate.
Preferably, further include the steps that forming soi wafer or epitaxial wafer in the step b)：By oxide layer by monocrystalline silicon
Piece bonding or extension are on a silicon substrate.
Preferably, in the step f), groove is formed by way of corrosion.
The present invention also provides a kind of manufacturing methods of pressure sensor, include the following steps：
A) heavily doped region, lightly doped district and in soi wafer or extension are formed on the surface of soi wafer either epitaxial wafer
Insulating layer is formed on the surface of piece；
B) inner cavity is etched on substrate；
C) soi wafer or epitaxial wafer are formed with heavily doped region, the side of lightly doped district is bonded in the upper end of substrate, and make
It is suspended at the top of substrate inner cavity；
E) side of soi wafer or epitaxial wafer far from heavily doped region, lightly doped district is thinned to scheduled thickness；
F) perforation is formed to the groove of heavily doped region on the surface of soi wafer or epitaxial wafer；
G) metal portion of connection heavily doped region is set in the groove.
Include the substrate with inner cavity the present invention also provides a kind of pressure sensor, the upper surface of the substrate passes through
Insulating layer is bonded with the varistor film layer being suspended above inner cavity, and the varistor film layer includes monocrystalline silicon piece, further includes
It is formed in heavily doped region of the monocrystalline silicon piece adjacent to inner cavity side, lightly doped district；It is arranged in correspondence in the upper end of the monocrystalline silicon piece
There is the groove penetrated through to heavily doped region, the metal portion of connection heavily doped region is provided in the groove.
Preferably, the heavily doped region, lightly doped district are respectively arranged with multiple.
Preferably, wherein the groove above each heavily doped region is connected together, and constitutes one and is distributed in monocrystalline silicon piece upper end
Annular groove.
Preferably, the cross section of the groove is rectangular or stands upside down trapezoidal.
Preferably, the insulating layer is silica.
The manufacturing method of pressure sensor of the present invention, using varistor is first prepared, the then mode of bonding and wafer thinning so that
Varistor film layer has higher thickness evenness after the step of carrying out ion implanting, bonding and wafer thinning, so as to avoid
The error for the varistor resistance value that plastic deformation introduces occurs for varistor film layer in ion implanting step after first bonding and wafer thinning, most
The accuracy that ensure that varistor eventually is conducive to the miniaturization manufacture of the performance for improving pressure sensor and sensor；It utilizes
The materials such as KOH corrode monocrystalline silicon piece to the surface of heavily doped region, deposited metal portion, are drawn from the upper surface of varistor film layer
Signal end reduces the influence to pressure drag caused by metal portion and single crystal silicon material coefficient of thermal expansion difference.
The pressure sensor of the present invention, it is simple in structure, form the heavily doped region of varistor film layer, lightly doped district is located at
It the lower end of monocrystalline silicon piece can be to avoid extraneous acid so as to so that the non-sensitive part of varistor film layer is isolated from the outside and comes
For the impurity such as alkaloid substance, dust particles on being influenced caused by varistor film layer non-sensitive part, improve pressure sensor can
By degree, and the pressure sensor is made to can be applied under conditions of bad environments.Meanwhile pressure sensor of the invention, it uses
It is located in groove in the metal portion that electric signal is drawn, so as to protect the metal portion without damage.Such as in scribing process mistake
Cheng Zhong, groove can be protected to be scratched caused by the white residue that the metal portion is not splashed, so that it is guaranteed that the metal portion connects with extraneous
The stability connect.
It was found by the inventors of the present invention that in the prior art, pressure sensor is during production at present, first by silicon chip
After bonding and wafer thinning, then it is made into varistor.Such production technology is easy to cause the plastic deformation of diaphragm.Therefore,
It is that the technical assignment to be realized of the invention is either never expected the technical problem to be solved is that those skilled in the art or
It is not expected that, therefore the present invention is a kind of new technical solution.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Description of the drawings
It is combined in the description and the attached drawing of a part for constitution instruction shows the embodiment of the present invention, and even
With its explanation together principle for explaining the present invention.
Fig. 1 is the structural schematic diagram of pressure sensor of the present invention.
Fig. 2 to Fig. 5 is the process flow diagram of pressure sensor manufacturing method of the present invention.
Fig. 6 is the vertical view of pressure sensor of the present invention.
Specific implementation mode
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should be noted that：Unless in addition having
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the present invention
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent attached drawing in a attached drawing.
With reference to figure 1, a kind of pressure sensor provided by the invention comprising substrate 1 and the pressure for being bonded in 1 upper end of substrate
Quick resistive layer, wherein inner cavity 8 is provided on the substrate 1, the varistor film layer for being bonded in 1 upper end of substrate is suspended at
The top of inner cavity 8, and make the inner cavity 8 that there is certain vacuum degree.
In the present invention, varistor film layer is all made of single crystal silicon material with substrate 1, in order to ensure varistor film layer and lining
Insulation between bottom 1 is additionally provided with insulating layer 2 between varistor film layer and substrate 1, which preferably uses dioxy
Silicon nitride material.Sensitive structure of the varistor film layer as pressure sensor comprising monocrystalline silicon piece 3, in the monocrystalline silicon piece 3
On heavily doped region 5, lightly doped district 4 can be for example formed with by way of ion implanting, the material of doping can be boron element.It is single
Crystal silicon chip 3 becomes p-type varistor after being lightly doped.Progress heavy doping, the technique being lightly doped belong to this on monocrystalline silicon piece
The common knowledge of field technology personnel, no longer specifically repeats herein.
In the pressure sensor of the present invention, the heavily doped region 5, lightly doped district 4 are located on monocrystalline silicon piece 3 neighbouring inner cavity 8
Side；With reference to the view direction of figure 1, heavily doped region 5, lightly doped district 4 are located at the lower end of monocrystalline silicon piece 3, this will just be lightly doped
Area 4, which is isolated from the outside, to come, and so as to avoid extraneous acid-base material, dust particles from being contacted with lightly doped district 4, improves pressure
The degree of reliability of sensor.
In order to by the electric signal of varistor draw, the monocrystalline silicon piece 3 upper end be arranged fluted 6, the groove 6 from
The upper end of monocrystalline silicon piece 3 is penetrated through to heavily doped region 5, to expose heavily doped region 5；Connection weight is provided in the groove 6
The metal portion 7 of doped region 5, such as metal portion 7 can be deposited on to the upper surface of heavily doped region 5, to make the electric signal of output from
It draws the upper surface of varistor film layer.Wherein, the cross section of the groove 6 can be the trapezoidal etc. of rectangle or handstand.
The pressure sensor of the present invention, it is simple in structure, form the heavily doped region of varistor film layer, lightly doped district is located at
It the lower end of monocrystalline silicon piece can be to avoid extraneous acid so as to so that the non-sensitive part of varistor film layer is isolated from the outside and comes
For the impurity such as alkaloid substance, dust particles on being influenced caused by varistor film layer non-sensitive part, improve pressure sensor can
By degree, and the pressure sensor is made to can be applied under conditions of bad environments.Meanwhile pressure sensor of the invention, it uses
It is located in groove in the metal portion that electric signal is drawn, so as to protect the metal portion without damage.Such as in scribing process mistake
Cheng Zhong, groove can be protected to be scratched caused by the white residue that the metal portion is not splashed, and ensure that the metal portion is connect with the external world
Stability.
In the present invention, be formed in heavily doped region 5 on monocrystalline silicon piece 3, lightly doped district 4 can be respectively multiple；Accordingly,
A groove 6 is arranged in the top of each heavily doped region 5, after multiple grooves 6 are connected together, constitute one and is distributed on monocrystalline silicon piece 3
The annular groove at end, with reference to figure 6.For those skilled in the art, can by way of corrosion on monocrystalline silicon piece 3 shape
Slot is circularized, by the annular groove, influence of the external stress to varistor can be weakened, finally improve pressure sensor
Accuracy of detection.
The present invention also provides a kind of manufacturing methods of pressure sensor, include the following steps：
A) inner cavity 8 is etched on substrate 1；Substrate 1 uses single crystal silicon material, can be for example, by the side of dry or wet
Formula etches inner cavity 8 in substrate 1；
B) heavily doped region 5, lightly doped district 4 and in soi wafer or outer are formed on the surface of soi wafer either epitaxial wafer
Prolong formation insulating layer 2 on the surface of piece；
Soi wafer or epitaxial wafer respectively can direct commercially available or self manufactures comprising as substrate
Silicon substrate 9, and be bonded by oxide layer 10 or monocrystalline silicon piece 3 of the extension above the silicon substrate 9；With reference to figure 3, in monocrystalline
The upper surface of silicon chip 3 forms heavily doped region 5 by ion implanting or other manner well-known to those skilled in the art, gently mixes
Miscellaneous area 4 becomes the varistor of pressure sensor, later in monocrystalline silicon piece 3 to form P+, P- on monocrystalline silicon piece 3
Upper end formed insulating layer 2, the insulating layer 2 can be silica, can be realized by oxidation technology, with reference to figure 4；
C) soi wafer or epitaxial wafer are formed with heavily doped region 5, the side of lightly doped district 4 is bonded in the upper end of substrate 1,
And it is made to be suspended at the top of substrate inner cavity 8；That is, by above-mentioned Fig. 4 soi wafer or epitaxial wafer be inverted, make it
With heavily doped region 5, lightly doped district 4 side towards substrate 1, and the upper end of substrate 1 is bonded in, finally by heavily doped region 5, light
Doped region 4 is encapsulated in the inner cavity 8 of substrate；
E) side of soi wafer or epitaxial wafer far from heavily doped region 5, lightly doped district 4 is thinned to scheduled thickness；Also
To say, by soi wafer or epitaxial wafer silicon substrate 9 and oxide layer 10 remove, and according to actual needs selectively to monocrystalline
Silicon chip 3 is thinned, and the structure such as Fig. 5 is formed；
F) perforation is formed on monocrystalline silicon piece 3 to the groove 6 of heavily doped region 5；Such as KOH or art technology can be passed through
Other materials known to personnel corrode monocrystalline silicon piece 3, form perforation to the groove 6 of heavily doped region 5, thus will be heavily doped
Expose in miscellaneous area 5；
G) metal portion 7 of connection heavily doped region 5 is set in the groove 6, the lead as varistor film layer connects
End.
The manufacturing method of pressure sensor of the present invention, using varistor is first prepared, the then mode of bonding and wafer thinning so that
Varistor film layer has higher thickness evenness after the step of carrying out ion implanting, bonding and wafer thinning, so as to avoid
The error for the varistor resistance value that plastic deformation introduces occurs for varistor film layer in ion implanting step after first bonding and wafer thinning, most
The accuracy that ensure that varistor eventually is conducive to the miniaturization manufacture of the performance for improving pressure sensor and sensor；It utilizes
The materials such as KOH corrode monocrystalline silicon piece to the surface of heavily doped region, deposited metal portion, are drawn from the upper surface of varistor film layer
Signal end reduces the influence to varistor caused by metal portion and single crystal silicon material coefficient of thermal expansion difference.
In the manufacturing method of the sensor, performed etching to substrate first, then to soi wafer or epitaxial wafer into
Row processing；For those skilled in the art, first soi wafer or epitaxial wafer can also be handled, then to substrate into
Row etching.That is, step a), the priority of step b) are no to final pressure sensor real in above-mentioned manufacturing method
Matter influences.
Although some specific embodiments of the present invention are described in detail by example, the skill of this field
Art personnel it should be understood that example above merely to illustrating, the range being not intended to be limiting of the invention.The skill of this field
Art personnel are it should be understood that can without departing from the scope and spirit of the present invention modify to above example.This hair
Bright range is defined by the following claims.
Claims (5)
1. a kind of manufacturing method of pressure sensor, which is characterized in that include the following steps：
A) inner cavity (8) is etched on substrate (1)；
B) heavily doped region (5), lightly doped district (4) and in soi wafer or outer are formed on the surface of soi wafer either epitaxial wafer
Prolong and forms insulating layer (2) on the surface of piece；
C) soi wafer or epitaxial wafer are formed with heavily doped region (5), the side of lightly doped district (4) is bonded in the upper of substrate (1)
End, and it is made to be suspended at the top of substrate inner cavity (8)；
E) side of soi wafer or epitaxial wafer far from heavily doped region (5), lightly doped district (4) is thinned to scheduled thickness；
F) perforation is formed to the groove (6) of heavily doped region (5) on the surface of soi wafer or epitaxial wafer；
The metal portion (7) of connection heavily doped region (5) g) is set in the groove (6).
2. manufacturing method according to claim 1, it is characterised in that：In the step a), existed by dry method or wet method
Inner cavity (8) is etched on substrate (1).
3. manufacturing method according to claim 1, it is characterised in that：Further include in the step b) to be formed soi wafer or
The step of epitaxial wafer：Monocrystalline silicon piece (3) is bonded by oxide layer (10) or extension is on silicon substrate (9).
4. manufacturing method according to claim 1, it is characterised in that：In the step f), formed by way of corrosion
Groove (6).
5. a kind of manufacturing method of pressure sensor, which is characterized in that include the following steps：
A) heavily doped region (5), lightly doped district (4) and in soi wafer or outer are formed on the surface of soi wafer either epitaxial wafer
Prolong and forms insulating layer (2) on the surface of piece；
B) inner cavity (8) is etched on substrate (1)；
C) soi wafer or epitaxial wafer are formed with heavily doped region (5), the side of lightly doped district (4) is bonded in the upper of substrate (1)
End, and it is made to be suspended at the top of substrate inner cavity (8)；
E) side of soi wafer or epitaxial wafer far from heavily doped region (5), lightly doped district (4) is thinned to scheduled thickness；
F) perforation is formed to the groove (6) of heavily doped region (5) on the surface of soi wafer or epitaxial wafer；
The metal portion (7) of connection heavily doped region (5) g) is set in the groove (6).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510289692.0A CN104900714B (en) | 2015-05-29 | 2015-05-29 | A kind of manufacturing method and pressure sensor of pressure sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510289692.0A CN104900714B (en) | 2015-05-29 | 2015-05-29 | A kind of manufacturing method and pressure sensor of pressure sensor |
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| CN104900714B true CN104900714B (en) | 2018-08-03 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102818662A (en) * | 2012-08-30 | 2012-12-12 | 无锡永阳电子科技有限公司 | Pressure chip of silicon sensor and self-stop etching process for pressure chip |
| CN204085748U (en) * | 2014-10-09 | 2015-01-07 | 苏州敏芯微电子技术有限公司 | Piezoresistive pressure sensor |
| CN104425485A (en) * | 2013-08-26 | 2015-03-18 | 武汉飞恩微电子有限公司 | Silicon piezoresistive type pressure sensor chip |
| CN204758178U (en) * | 2015-05-29 | 2015-11-11 | 歌尔声学股份有限公司 | Pressure sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020179563A1 (en) * | 2001-06-04 | 2002-12-05 | Horning Robert D. | Application of a strain-compensated heavily doped etch stop for silicon structure formation |
-
2015
- 2015-05-29 CN CN201510289692.0A patent/CN104900714B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102818662A (en) * | 2012-08-30 | 2012-12-12 | 无锡永阳电子科技有限公司 | Pressure chip of silicon sensor and self-stop etching process for pressure chip |
| CN104425485A (en) * | 2013-08-26 | 2015-03-18 | 武汉飞恩微电子有限公司 | Silicon piezoresistive type pressure sensor chip |
| CN204085748U (en) * | 2014-10-09 | 2015-01-07 | 苏州敏芯微电子技术有限公司 | Piezoresistive pressure sensor |
| CN204758178U (en) * | 2015-05-29 | 2015-11-11 | 歌尔声学股份有限公司 | Pressure sensor |
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| CN104900714A (en) | 2015-09-09 |
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