WO2002095820A3 - Hohlraumstruktur in einer integrierten schaltung - Google Patents

Hohlraumstruktur in einer integrierten schaltung Download PDF

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Publication number
WO2002095820A3
WO2002095820A3 PCT/DE2002/001699 DE0201699W WO02095820A3 WO 2002095820 A3 WO2002095820 A3 WO 2002095820A3 DE 0201699 W DE0201699 W DE 0201699W WO 02095820 A3 WO02095820 A3 WO 02095820A3
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
hollow structure
insulation material
layer
intermediate spaces
Prior art date
Application number
PCT/DE2002/001699
Other languages
English (en)
French (fr)
Other versions
WO2002095820A2 (de
Inventor
Werner Pamler
Manfred Engelhardt
Zvonimir Gabric
Original Assignee
Infineon Technologies Ag
Werner Pamler
Manfred Engelhardt
Zvonimir Gabric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Werner Pamler, Manfred Engelhardt, Zvonimir Gabric filed Critical Infineon Technologies Ag
Publication of WO2002095820A2 publication Critical patent/WO2002095820A2/de
Publication of WO2002095820A3 publication Critical patent/WO2002095820A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Eine Hohlraumstruktur (100) in einer integrierten Schaltung weist auf ein Substrat (101) mit einer Substratoberfläche (102), darauf nebeneinander angeordnete Leiterbahnen (103) mit dazwischen liegenden Zwischenräumen (104), eine auf jeder der Leiterbahnen (103) angeordnete erste Schicht (105) aus einem ersten Isolationsmaterial und eine die Zwischenräume (104) bedeckende zweite Schicht (106) aus einem zweiten Isolationsmaterial, welches sich nur auf dem ersten Isolationsmaterial abscheiden lässt.
PCT/DE2002/001699 2001-05-22 2002-05-10 Hohlraumstruktur in einer integrierten schaltung WO2002095820A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10125019.3 2001-05-22
DE2001125019 DE10125019A1 (de) 2001-05-22 2001-05-22 Hohlraumstruktur, Mehrfach-Hohlraumstruktur und Verfahren zum Herstellen einer Hohlraumstruktur

Publications (2)

Publication Number Publication Date
WO2002095820A2 WO2002095820A2 (de) 2002-11-28
WO2002095820A3 true WO2002095820A3 (de) 2003-02-06

Family

ID=7685785

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/001699 WO2002095820A2 (de) 2001-05-22 2002-05-10 Hohlraumstruktur in einer integrierten schaltung

Country Status (3)

Country Link
DE (1) DE10125019A1 (de)
TW (1) TW554511B (de)
WO (1) WO2002095820A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4202389B2 (ja) 2003-04-10 2008-12-24 インフィネオン テヒノロギーズ アーゲー バイポーラ半導体構成要素、特にバイポーラ・トランジスタ、および対応するバイポーラ半導体構成要素の製造方法
DE10341544B4 (de) * 2003-09-09 2005-10-13 Infineon Technologies Ag Verfahren zum Herstellen einer Leiterbahnanordnung und Leiterbahnanordnung
DE102004003337A1 (de) 2004-01-22 2005-08-18 Infineon Technologies Ag Plasmaangeregtes chemisches Gasphasenabscheide-Verfahren, Silizium-Sauerstoff-Stickstoff-haltiges Material und Schicht-Anordnung
DE102004050391B4 (de) * 2004-10-15 2007-02-08 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5407860A (en) * 1994-05-27 1995-04-18 Texas Instruments Incorporated Method of forming air gap dielectric spaces between semiconductor leads
JPH0955431A (ja) * 1995-08-15 1997-02-25 Nippon Steel Corp 半導体装置の製造方法
US5990557A (en) * 1995-06-07 1999-11-23 Advanced Micro Devices, Inc. Bias plasma deposition for selective low dielectric insulation
US6022802A (en) * 1999-03-18 2000-02-08 Taiwan Semiconductor Manufacturing Company Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5407860A (en) * 1994-05-27 1995-04-18 Texas Instruments Incorporated Method of forming air gap dielectric spaces between semiconductor leads
US5990557A (en) * 1995-06-07 1999-11-23 Advanced Micro Devices, Inc. Bias plasma deposition for selective low dielectric insulation
JPH0955431A (ja) * 1995-08-15 1997-02-25 Nippon Steel Corp 半導体装置の製造方法
US6022802A (en) * 1999-03-18 2000-02-08 Taiwan Semiconductor Manufacturing Company Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 06 30 June 1997 (1997-06-30) *

Also Published As

Publication number Publication date
DE10125019A1 (de) 2002-12-05
WO2002095820A2 (de) 2002-11-28
TW554511B (en) 2003-09-21

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