WO2002084401A3 - Photoresist compositions comprising solvents for short wavelength imaging - Google Patents

Photoresist compositions comprising solvents for short wavelength imaging Download PDF

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Publication number
WO2002084401A3
WO2002084401A3 PCT/US2002/008127 US0208127W WO02084401A3 WO 2002084401 A3 WO2002084401 A3 WO 2002084401A3 US 0208127 W US0208127 W US 0208127W WO 02084401 A3 WO02084401 A3 WO 02084401A3
Authority
WO
WIPO (PCT)
Prior art keywords
solvents
short wavelength
wavelength imaging
photoresist compositions
resists
Prior art date
Application number
PCT/US2002/008127
Other languages
French (fr)
Other versions
WO2002084401A2 (en
WO2002084401A9 (en
Inventor
Charles R Szmanda
Anthony Zampini
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Priority to KR10-2003-7012363A priority Critical patent/KR20040062877A/en
Priority to AU2002257066A priority patent/AU2002257066A1/en
Priority to EP02726647A priority patent/EP1377879A2/en
Priority to JP2002582085A priority patent/JP2005509180A/en
Publication of WO2002084401A2 publication Critical patent/WO2002084401A2/en
Publication of WO2002084401A3 publication Critical patent/WO2002084401A3/en
Publication of WO2002084401A9 publication Critical patent/WO2002084401A9/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

New photoresists are provides that are suitable for short wavelength imaging, particularly sub-170 nm such as nm. Resists of the invention comprise a fluorinecontaining polymer, a photoactive component, and a solvent component. Preferred solvents for use on the resists of the invention can maintain the resist components in solution and include one or more preferably two or more (i.e. blends) of solvents. In particularly preferred solvent blends of the invention, each blend member evaporates at substantially equal rates, whereby the resist composition maintains a substantially constant concentration of each blend member.
PCT/US2002/008127 2001-03-22 2002-03-15 Photoresist compositions comprising solvents for short wavelength imaging WO2002084401A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR10-2003-7012363A KR20040062877A (en) 2001-03-22 2002-03-15 Solvents and photoresist compositions for short wavelength imaging
AU2002257066A AU2002257066A1 (en) 2001-03-22 2002-03-15 Photoresist compositions comprising solvents for short wavelength imaging
EP02726647A EP1377879A2 (en) 2001-03-22 2002-03-15 Photoresist compositions comprising solvents for short wavelength imaging
JP2002582085A JP2005509180A (en) 2001-03-22 2002-03-15 Solvent and photoresist composition for short wavelength imaging

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US27817001P 2001-03-22 2001-03-22
US60/278,170 2001-03-22

Publications (3)

Publication Number Publication Date
WO2002084401A2 WO2002084401A2 (en) 2002-10-24
WO2002084401A3 true WO2002084401A3 (en) 2003-05-15
WO2002084401A9 WO2002084401A9 (en) 2004-02-19

Family

ID=23063955

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/008127 WO2002084401A2 (en) 2001-03-22 2002-03-15 Photoresist compositions comprising solvents for short wavelength imaging

Country Status (7)

Country Link
EP (1) EP1377879A2 (en)
JP (1) JP2005509180A (en)
KR (1) KR20040062877A (en)
CN (1) CN100378578C (en)
AU (1) AU2002257066A1 (en)
TW (1) TWI308256B (en)
WO (1) WO2002084401A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003140345A (en) * 2001-11-02 2003-05-14 Fuji Photo Film Co Ltd Positive resist composition
US7335454B2 (en) 2001-12-13 2008-02-26 Fujifilm Corporation Positive resist composition
CN105334697B (en) * 2015-12-08 2019-10-11 深圳市华星光电技术有限公司 The production method of photoetching compositions and colored filter
CN106444281A (en) * 2016-09-22 2017-02-22 京东方科技集团股份有限公司 Photoresist and etching method
CN113296360B (en) * 2021-05-21 2024-06-14 上海邃铸科技有限公司 Acid inhibitor for photoresist composition, preparation method and photoresist composition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229473A (en) * 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
DE4319178C2 (en) * 1992-06-10 1997-07-17 Fujitsu Ltd Resist composition containing a polymer material and an acid generator
JP3804138B2 (en) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 Radiation sensitive resin composition for ArF excimer laser irradiation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
M. TORIUMI ET AL.: "Resist materials for 157-nm lithography", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 4345, no. 1, February 2001 (2001-02-01), USA, pages 371 - 378, XP002209335 *
T. OGATA ET AL.: "New Polymer for 157 nm Single-Layer Resist Based on Fluorine Containing Acryl Copolymer", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 4345, no. 2, February 2001 (2001-02-01), USA, pages 10481048 - 1055, XP008001411 *

Also Published As

Publication number Publication date
AU2002257066A1 (en) 2002-10-28
KR20040062877A (en) 2004-07-09
WO2002084401A2 (en) 2002-10-24
WO2002084401A9 (en) 2004-02-19
CN100378578C (en) 2008-04-02
TWI308256B (en) 2009-04-01
EP1377879A2 (en) 2004-01-07
CN1505773A (en) 2004-06-16
JP2005509180A (en) 2005-04-07

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