TWI308256B - Solvents and photoresist compositions for short wavelength imaging - Google Patents

Description

1308256 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to a novel photoresist suitable for short wavelength imaging comprising a secondary 2 〇 〇 n m, particularly a secondary 丨 7 〇 mn (eg 157 nm). The photoresist of the present invention comprises a fluoropolymer, a photoactive component, particularly one or more photoacid generators, and a solvent component. A preferred container for the photoresist of the present invention can hold the photoresist component in a solution and contain two or more liquid substances (incorporating a solvent blend of the present invention) The rate of the essence material is evaporated, so that the respective % synthesis fractions of the photo-perfects are maintained at a substantially constant concentration. The photoresist system-spraying image transfers the image to the photosensitive film of the substrate to form a green seam layer, and then Pass through a pure source of light;

Exposure of the photoresist layer. The mask has a partial area that is versatile for activating radiation: the other areas are permeable to activating radiation. Exposure to activation of the 2 resist coating provides a photo-induced chemical shift to the photomask 6 == photoresist coated substrate. After exposure, the photoresist is corrected, and: #彳g] a relief that allows the substrate to be selectively processed. For the photoresist, the exposure is effective. For most negative effects, polymerization or cross-linking reactions are carried out between the chelating agents. The area of the junction is compared with the unexposed area of the county, the six' B j7 acting photoresist, the exposed brighter developer solution, and the unexposed area is relatively The pregnant chicken V is combined with the selection of the agent and the felt remains on the left side. The photoresist composition has been disclosed in (Revised) 92065 1308256

Deforest, Photoresist Materials and Processes,

McGraw Hill Book Company, New York, ch. 2, 1975 and Moreau by Semiconductor Lithography, Principles

Practices and Materials, Plenum Press, New York, ch. 2 and 4. 4 tubes are generally commercially available photoresists for many applications, but general photoresists still have a number of significant disadvantages, especially in high performance applications, such as the formation of high resolution _ half micron And times _ quarter micron features. As a result, there has been an increasing interest in resistants that can produce photoimaging using short-wavelength radiation, which includes exposure radiation of about 250 nm or less, or even about 2 〇〇 nm or lower, for example, about 193 nm. With such a short exposure wave, a smaller feature is formed. Thus 'exposure at 248(10) or 193(10) can result in very small features (eg, secondary center... and good image resolution). Light conforms to industrial small-scale circuit patterns (eg, provides greater routing, and improved device performance) Sustained demand. Recently, F2 excimer laser imaging (ie, with wavelength, 157 nm radiation) has been considered as a way to make even smaller features. Fu ^zf^, SPIE Proceedings (Advances ln Res1St^ eehiK)l0gy), v〇1 3678, 叩卿i3 — 23 (i9. [Prior Art], two novel photoresist compositions of the tongue, including fluoropolymer, ^ into two (especially Photoacid generator compound), hydrazine and solvent. The present day resist is particularly suitable for imaging at very short wavelengths, such as sub-17. Feed (revision) 92065 1308256 is about 157 nm). The preferred solvent for the photo-resist of the present invention comprises heptanone, especially 2-heptane (methyl-n-pentyl) and 3-p-copper; ethyl-n-decyl, ethylene glycol Ethyl sulphate; rain-妒田拉内-酉子 methyl ether acetate; amyl acetate; methyl isodecyl ketone; mercapto ethyl ketone; ethylene glycol decyl ether acetate;戊酷; ethylene glycol methyl ether acetate vinegar; ethyl n-butyl ketone butyrate; 2-methyl + pentanol (hexanol); ethylene glycol propyl; propylene glycol = butyl ether, Acid methyl vinegar; ethyl hexanoic acid; cumene (isopropylbenzene) xylene test; cyclohexanone; ethylene glycol ethyl-acetic acid vinegar; tridecyl alcohol; 1:) hex = B 1,3: , dimethyl stupid; acetic acid brewed (2 ~ methyl + pentyl acetic acid two 'one know - fluorenyl diethylene glycol dimethyl (6); diisobutyl ketone; carbon::: n-propyl SB, diacetone alcohol Ethylene glycol butyl scale; and propylene glycol butyl == face' The preferred solvent for the photoresist of the present invention is a functionalized material. This is dissolved in the photoresist of the present invention. Particularly effective. Toothing solvent used in the photoresist of the present invention:: toothed aromatic Solvents, such as gas benzene, gas benzene, tri-gas methyl difluoromethyl benzene, etc.; perfluoroalkyl solvent; and gas test, for example, gas-700, FC-43, and FC-_ It is purchased from 3MCO.) and its secret solvent and other fluorinated solvents which can be purchased from 3M Co., etc. The resin formulation of the 4-incorporated glutinous agent is also preferred, and the ruthenium compound is synthesized, for example: ΐΓπ "for 2 - heptanone. Other blending components may suitably be: ritual-yiyi®, propylene glycol methyl ether acetate (PGMEA), diacetone alcohol, thiohexyl ester, ethyl hexanoate, ~ Ding vinegar (Gmj, diethylene glycol dioxin, (amendment) 92065 7 1308256 propanol monodecyl and propylene glycol methyl _. Other solvent conjugates that can be used with the photoresist of the present invention include Other ketones and other carbonyl functionalities are included in the compounds (for example, solvents containing several groups have been found to be more effective at dissolving gaseous polymers than other non-radical groups. In particular, cyclohexene _ a plurality of dialkyl ketones, such as diisobutyl ketone and ethoxyethyl vine vinegar, are preferred solvents for use in the photoresist formulations of the present invention, and include one or more other solvents, such as ethyl lactic acid. , propylene glycol methyl acetate vinegar (10) EA), dipropyl _, acetic acid hexa vinegar, hexanoic acid ethyl vinegar, "butine lysine L", diethylene glycol, propylene glycol and propylene glycol methyl (tetra) ' as a blending component In general, ketone solubilized vinegar is good. - Butyl 乂 乂 contains gluten (for example, ethyl ethoxy propyl solvent mixture in the formulation of the present invention can be recorded in a single conjugate Including two, three or more different solvents, the general type is three;; the same solvent. Preferably, several bases (for example, heptanone, diisobutyl ketone) ruthenium is present in an effective dissolved amount, - the amount of the photoresist component dissolved is / (10) (d) itself is a preferred component of the solvent blend of the effective photoresist of the invention For example, the solvent can be easily raised in many examples of the toothing solvent, even if only a small amount of the solvent component is present, for example, one or less: the total solvent of the photoresist composition is about 5° defaced agent [about two: multi-solvent is present in the amount of the photoresist group side. The solvent blend of the present invention or even 2% by volume or less of the precursor composition may also contain a large amount (revision) 92065 Ϊ 308256 μ of a halogenated solvent, such as a total solvent component of the photoresist composition of ν 60, 70, 80, 90 or 95 vol% or more - or a plurality of teeth = j γ is preferably one or A wide variety of solvating solvents are used in the solvent blend, and the agent blend includes other materials such as heptanone, cyclohexamine, lactic acid, and the like containing a Wei group and/or a radical moiety.

Another preferred component of the photoresist blend of the invention of the invention is water. - production and reproduction;::: Stabilizing the solvent blend and the photoresist component, for example, the photoacid step is more resistant to degradation during storage. The soft bake protects the reaction. Preferably, the water system is generally preferred in a photoresist composition having a relatively small amount of about 1G, 8, 6, 5, [, 3?], wherein the water system does not exceed light 25 The body, the fraction of about 3, 2, 1, the ne 4, and the first hindrance composition are present in an amount to include other amounts of oxime and 0 5% by volume. The water is preferably a solvent blend of a solvent such as heptanone or sulfonium sulfonate. The solvent blend of the present invention is preferably in the middle of evaporation, so that the blending component is preferably a prior art resistive group c-blocking compound, so that it is mixed with the solvent of the melamine composition in the photoresist composition. The process of evaporating 'coating and soft baking treatment in the resist body formula;, two::::: blend composition. In a fixed ratio, it is possible to improve the substantial characteristics of the 曰, ', and conjugate components, such as lithography μ, which avoids the formation of two features of the photoresist. Daily and other precipitation, shape (amendment) 92065 1308256 into irregular thin layer, unintended polymerization bond separation. Appropriate: packaged:! Two = sexual components, the photoresist of the present invention can also be made into the southern scorpion 4 or eve species /, his ingredients, such as alkaline additives, dissolution: _ σ ( And / or fluorinated composition), interface activity = or leveling agent, and increase _. Preferably, the photoresist of the present invention may further comprise a fluorine: = Γ, a :: mouth (with each of the blend components (4)) and/or a blend of two or more photoacid generators. = also includes a method of forming a relief, including the formation of high resolutions such as 'each line has vertical or substantially vertical sidewalls, and ^. force G. 4G microns or less, or even about G25, m • 10 A method of dense or separate line patterns of micrometers or less. In the case of 0, the light_coating of the present invention is (4) to have a shorter wavelength (4) 2: radiant less than 200 (10) radiation, especially 157 radiation, and wave = high energy radiation at 100 nm, or Other high energy radiation (eg, helium, electron beam, ion beam or [light) imaging. The present invention includes, and includes, articles having a photoresist to which the present invention is applied, or a substrate having the present invention (e.g., a microelectronic wafer). Other aspects of the invention are disclosed below. SUMMARY OF THE INVENTION As described above, the present invention provides a novel photoresist composition comprising a fluoropolymer, a photoactive component (particularly a photoacid generator compound, and a solvent. The spirulina component may suitably contain a single - Solvent, or a plurality of different liquids (solvent blends). (Amendment) 92065 10 1308256 As described above, the preferred solvent for the photoresist of the present invention contains a ketone or other carbonyl (e.g., ester) functionality. a liquid such as heptanone such as 2-g-(indenyl-n-pentyl ketone) and 3-heptanone, preferably 2-heptanone; fluorenyl iso-j-yl; a plurality of dialkyl ketones, For example, Gw alkyl (c = 〇) Ch2 alkyl, 锃 is Cm alkyl (〇〇) C 2-6 alkyl, such as ethyl n-butyl ketone and diisobutyl steel 'and aliphatic ketone compounds, such as Cyclohexanone. If used, the term "ketone," is used in the sense that it is used.

That is, the functionality of the structure -(〇〇)_ is typically for adjacent saturated carbons, and = 匕3 phase 郇 to -(〇〇)-structures with heteroatoms such as esters, amines Class, carboxyl group, etc. The term "several," includes the _c(=0)_ moiety adjacent to a carbon atom and a hetero atom, that is, "carbonyl," which includes ketones, vinegars, amines, Carboxy group (-(3)0H) and the like. Preferably, the photoresist formulation comprises a blending solvent, wherein one of the blending components is heptanone, preferably 2-heptanone. Other blending components may suitably be, for example, ethyl decanoate, propylene glycol methyl ether acetate (PGMEA), diacetone alcohol, acetic acid, ethyl hexanoic acid, vinegar (GBL), diethylene glycol Dimethyl ether propylene glycol dimethyl ether and propylene glycol decyl ether. Other solvent blends for use with the photoresists of the present invention include, among others, blends of other ketones or carbonyl functionalities (e.g., vinegar). The solvent of the ketone group is more effective in cold-solving the fluorohydrate than the other non-keto-based solvent. In particular, 'cyclohexanone, a plurality of dialkyl ketones such as di-n-butyl hydrazine and ethoxyethyl propyl (tetra)' are preferred for use in the photoresist formulation i of the present invention, including one or more other Solvents, such as lactic acid, propylene glycol methyl acetate (10) EA, dipropanol, hexanoic acid (amedited) 92065 13〇8256, brewing, r-butyl (GBL), diethylene glycol And propylene glycol just as a blending component. -...Alcohol dimethyl scale The solvent conjugate in the photoresist formulation of the present invention may include two, two, 'early blends or a plurality of different solvents, and the blood is smothered from the early resist. The composition includes two kinds of /, a terpenoid solution, such as heptanone, diisobutyl ketone -); no, preferably, the carbonyl solvent itself #M f effective dissolved amount, ^ ^ effective Dissolve the photoresist component in the sixth. For the total weight of the composition, 8 5 to 9 G Cao θ. = in the middle of the ^ basal solvent effective dissolution of the blood type h texamol agent constitutes at least solvent blending /, dust is also the or 7. Volume %. ", 0, 3, 40, 50, 6. ^ The above-mentioned i-solvent, especially a fluorinated solvent (for example, a wide or one carbon atom of organic fluoroether solution: For the preferred solvent blending component, the relatively small amount of the total solvent component of the composition is about 1 〇, 9, 8, 7, β, such as the total solvent of the photoresist. Blocking %. 6'5, 4, 3, 2 or 0.5 volume as above, the preferred solvent blend rate of the present invention is evaporated from the photoresist formulation to cause the blend to resist and = maintain a substantially equal concentration In particular, an azeotropic mixture is formed at room temperature (about 25t) at a constant rate, and is evaporated from the liquid formulation at a predetermined rate to maintain a substantially constant temperature in the photoresist composition. The ratio of the material to the room temperature solvent azeotrope of the photoresist composition of the present invention can be obtained by (amendment) 92065 ] 2 1308256

Simple tests are easily confirmed. For example, a two-component solvent is blended in different proportions, such as a first blend sample having 5 parts by volume of the first blended component, 20 parts of the second blended component; and a second blend of the sample having 5 portions. The first blended component of the volume, 15 parts of the second blended component; the third blend of the sample has 5 parts of the first blended component, 10 parts of the second blended component; the fourth blend of the sample 5 parts of the first blended component, 5 parts of the second blended component; the fifth blend sample has 10 parts of the first blended component, 5 parts of the second blended component; the sixth blend The sample has 15 parts of the first blended component and 5 parts of the second blended component; and the seventh blend sample has 20 parts of the first blended component and 5 parts of the second blended component. Each blend sample was placed in a solution with open cells at the top to increase the reduced pressure until the blend reached boiling at room temperature. The boiling test sample is allowed to condense and separate. Other samples were condensed and collected during the low pressure boiling process of the blend. For example, after 50 vol% of the blend sample was evaporated, condensation and separation of another blend sample was performed.

A solvent blend which is regarded as a room temperature azeotrope, wherein the composition of the sample which is condensed and separated is close to the composition of the solvent blend, for example, the volume of the solvent blend group in the separated sample. , which is about 30, 20'10 or even 5% of the heat-treated solvent blend. As for the preferred azeotrope, the sample which is separated and condensed after evaporation of 50% by volume of the original blend sample is close to the composition of the solvent blend, for example, the solvent exchange compound in the separated sample exists. The volume is about 30, 20, 10 or even 5% of the heat treated solvent blend. In the separated sample, the amount of each blend component can be appropriately determined by a method such as gas chromatography (Revised) 92065 1308256. A particularly preferred solvent blend of the photoresist composition of the present invention comprises: a solvent blend comprising heptanone (preferably 2-heptanone) and ethyl lactate, wherein heptanone and ethyl lactate preferably constitute light At least 60, 70, 80, 90 or 95% by volume of the total solvent of the composition, the volume of heptanone is preferably greater than the ethyl lactate, wherein the volume of heptanone: the volume of ethyl lactate is 2 ·· 1 or more preferred; a solvent blend comprising heptanone (preferably 2-heptanone) and propylene glycol decyl ether acetate, wherein heptanone and propylene glycol decyl ether acetate preferably constitute a photoresist The total solvent of the composition is at least 6 〇, 7 〇, 8 〇, 卯 or 95 vol%, and the volume of heptanone is preferably greater than the propylene glycol methyl _ acetic acid g, wherein ketone, the volume of heptanone: propylene glycol A The base - acetic acid g is intended to have a volume of 2: preferably; / a solvent mixture comprising cyclohexyl and lactic acid, at least (10) / of the total solvent constituting the photoresist composition.

70, 80, 90 or 95 vol%, the volume of P 0 Ui hexanone is better than that of lactic acid r ester, wherein the volume of cyclohexanone is owed to the acetaminophen. Or better than the above; feng z. 1 including cyclohexanone and propylene glycol, its μ 7 仏 T base secret acetate solvent mixed with '% ketone and propylene glycol methyl methacrylate / mouth methyl ether Acetate is preferably a total solvent of at least 60, 70, 8 〇, Qn 苒珉 阻 阻 composition. ^ 80 90 or 95 vol%, the volume of pm is greater than propylene glycol 曱 秘 、, ketone ketone r emulsified ether acetate compared to the volume of 1: propylene glycol decyl ether ethyl ^ t VIII, with hexanone ketone soil, G a terephthalate by the helmet 9. 4, including 2-heptanone and 3-g (10) Preferably, it is preferably 2. 1 or more; 5 a solvent blend of the two, wherein 2_ (amendment) 92065 14 1308256 heptanone and 3-heptanone preferably constitute at least a total solvent of the photoresist composition 40, 50, 60, 70, 80, 90 or 95 vol%; including heptanone (preferably 2-heptanone), cyclohexanone, and at least one of the solvents (4) such as 'ketone, (iv) or non-silk solvent Bt lactate Or a solvent blend of I alcohol methyl ether acetate; including water and/or other solvents (eg, one or more of several/or non-carbonyl solvents such as heptanone, cyclohexanone, ethyl lactate, propylene glycol) a solvent blend of Meijun B (IV), etc., preferably, the water system is present in a small amount, such as not exceeding 5% by volume of the total solvent component of the photoresist composition, exceeding about 々mu or 0.25 vol%; Excluding functional solvents (especially gasification solvents such as (iv) gas B (4)) and one or more other solvents (for example, a = ridyl and/or non-carbonyl solvent such as heptanone, cyclohexanone, ethyl lactate) A solvent blend of propylene glycol methyl ether acetate or the like. a less preferred 'solvent that is not a preferred aspect of the invention, a bismuth (= 'methyl ethyl hydrazine) and a benzene solvent (such as tooth benzene, special "= _ _ ' mixture blend (ie, there are only two kinds of bismuth in the photoresist, and a wide agent). Also, it is not a preferred embodiment of the present invention, which is a photoresist containing ruthenium (1). In particular, only A is used as a ruthenium agent (there is no other blend component). The solvent of the inventive photoresist composition is preferably used in high purity, and the (4)/phase layer is higher than the measured method. The purity of 98% or 99%. The solvent used for x-ray corpse can also be used after appropriate. As mentioned above, the photoresist of the present invention preferably includes a fluorine-containing resin, photoactive (revision) 92065 15 1308256 Knives (Car Masters include one or more photoacid generator compounds), and as needed, desired, or a variety of other additives, such as alkaline additives, one or more dissolution inhibitor compounds, surfactants And / or plasticizer. [Resin] -

The fluorine-containing resin component of the photoresist of the present invention preferably contains a repeating unit derived from at least one ethylenically unsaturated compound. Preferred unsaturated groups are aliphatic ribs such as dilute borneol, cyclohexene, adamantene and the like. The alicyclic unsaturated compound preferably has one or more selected from the group consisting of fluorine, perfluoroalkyl (10) and c]-]2 perfluoroalkyl) or perfluoroalkoxy (especially Ci_) 2 perfluoroalkyl Substituents for oxy), such a 1-substituent, by at least one saturated carbon disk == spacers, avoids excessive inhibition of the polymerization. Fluorinated olefin is one reader, for example, a tetrafluoroethylene (fluorene) compound and a hexafluoroanthryl alcohol compound and derivatives thereof. Preferred examples of the saturating compound for synthesizing the gas-containing polymer of the present invention comprise the following formula (eight to:

(Revised) 92065 16 1308256

TFE F3C—CF3 〇7 〇OH F3C OH% F3cXcF3 (6) (H) (I) (J) In the formulae (A) to (J), each r is independently hydrogen or, if necessary, a non-gas • substituent (eg An alkyl group substituted with a halogen, particularly fluorine, for example, an alkyl group (especially a C, -! 2 fluoroalkyl group, preferably a Cl-^ perfluoroalkyl group); Alkoxy group, such as Gw alkoxy, haloalkoxy (particularly 疋C]-, 2 fluoroalkyl); carboxyl group, Ci]4 alkylcarboxy; or photoacid labile group such as photoacid Stabilizing the ester or acetal. m is from 1 to the maximum number of valences of the monomer, and m is typically 1, 2, 3, 4 or 5' and !! is 〇, 1 or 2. Formula (person) to Some of the compounds of (1) are disclosed in the following formula (k) and a):

η Ο C = f3c-x-cf, qi f3C ten CF3

OH OLG (K) (L) is well-known, x is (|)p, where (4), 1 or 2' ‘ ΐ; light order is unstable: CH2- or _CH,;~CH20CH2, or _CH2. -; LG cold or photoacid instability are public 4, human.,, P knife into a knife, such as four carbon (such as the third butyl) or eight other carbon bases that need to be replaced by the base And or 1 °, the pendant group of the resin of the photoresist of the present invention (for example, the group R) in the formula (A) to (F), preferably comprises a group represented by the following structure: X ,

F, C

YZ wherein X is as defined in the above formulae (K) and (L); Y is hydrogen, a chemical bond connecting oxygen to the group Z, (-CH2-)p, wherein p is 1 or 2; -CHA- or CHR〇一, wherein R is Ci~alkyl, preferably C decyl; and hydrazine is alkyl, preferably having from about 2 to about carbon atoms, including tris(c!-u) alkane Methyl, bis(CiH6)alkylcarboxylate fluorenyl; benzyl; fluorenyl; (repair JL) 92065 18 1308256

Carboxyl aryl; ^Dieji County; A "group; for example, an acetate group having from 2 to about 20 carbonogens; or a tetrahydrofuranyl group; 4 It's a South group and, preferably, X is _〇CH2_; preferably and preferably Z is _丁| ', , or ~CH2〇-; Feng Di dibutyl, methyl or fluorenyl. The photoresist of the present invention which can be polymerized to provide the following formula (M) to (8), wherein the additional monomer oxime of the starting oxime and the polymerizable group (i.e., (Μ,,), °, =, ' (Ν,) and (〇,) ^k υ )) are as follows p FF

(R)m (Μ)

(R)m (Μ,·) No

-F η f=0==cf f2〇=fg

〇R)id

〇 (R)m (Ν')

I (N)

In M, M,,, N, r; , u, +. 4 0, 〇 'and 〇 '', the gentleman's account of the above formula (Α) to Q), only η $ ϊ . The righteous, · X is (-ch,, 〇 or i, -On. Γ d)p, formula, -Π]2〇αί2; or gas H2〇_; J9 (amendment) 92065 1308256 y is a bond, hydrogen, -ch2〇~, or <Ηί?η , ^ ^ 乂LHR〇-, where R is C]-]6 alkyl ruthenium 4 soil is C!-4 alkyl; Preferably, <-in is -0CH2-; and preferably gamma is a bond or -CH2O-. Among the photoresists of the present invention, the units of the preferred preferred fluoropolymer units shown in Formulas 1 to 9 are:

Contains

0LG

COOOL·

4

L疋. P component, such as four carbon (such as

OLG ^ tributyl) alkyl or photoacid is not; and Z is as defined above, that is, γ is hydrogen, linking oxygen and the chemical bond of group 2, (-CH2-)p, where p is 1 Or 2, -CH2〇- or CHR0-, wherein R is C]-iG alkyl, preferably c]-4 alkyl; and Z is alkyl, preferably having from 1 to about 20 carbon atoms, Contains three 20 (amendment) 92065 1308256 thiol group, bis(Ci i6) succinic acid aryl fluorenyl group; stupid methyl; Schetyl; ^ fluorenyl) carbocyclic aryl; a mercapto group; or: an acetate group having from 2 to about 20 carbon atoms; a tetrahydropyranyl group; or a tetrahydrofuranyl group; x and x are H'. Preferably, Y is a bond or -CH2〇-; Month-butylmethyl or blocked group. In the above structure, it is represented by ', soil* (the extended line indicates the polymer backbone or the bond. The special fluoropolymer of the moonlight resist includes the selected ones, ^), (R) and Repeat unit of monomer group of (S):

F3C~~(—CF3 OR

X

TFE 〇/

OR (Q) (R) (S) Substituted = in formula (8) 'hydrogen or, if desired, butyl (including the base: ', especially methyl, ethyl, propyl, for too much 1 or 2;_0CH2- or -CH2〇_<:: The preferred polymer of the photoresist = photoresist comprises the following monomeric human (P) and mouth / two, (Q); 2) binding (p), (Q,) and (R); and 3) Junction (P) and / or (Q), (R) and (S). A particularly preferred polymer for use in the photoresist of the present invention comprises: a resin composed of units of (), (p) and (Q), which (amendment) 92065 2] 1308256 4〇· 60 ; 30 : 70 ; : 80 ; or 10 : 9 〇 Mo Er ratio exists; ^ (2) Resin composed of units of (P), (Q) & (R), wherein, based on the total unit of the polymer (P It is present in an amount of from about 1 to 6 mole percent, preferably from 20 to 50 or from 30 to 40 mole percent; (8) is present in an amount from about i to mole %, preferably 5 Between 50 or 1 〇 to 4 〇 mol %; and (R) is present in an amount of from about 2 〇 to 60 mol %, preferably 20 to 60 or 30 to 5 〇 or 6 〇 mol % The amount of the resin; and the resin composed of the units of (8) and/or (8), (8) and (8), and the total units (p) and (9) of the polymer are independently from about 〇 to 6 〇. The amount of mol% is present, preferably from 1 〇 to 50 or from 20 to 40 mol, and the condition is that at least (p) and (8) are present in the polymerization '(R) is about 50 Up to 60% by mole, preferably difficult or 1〇 to 3〇, 40 or 50% by mole ; ⑻ system and to an amount of about 60 mole% of the present, or preferably 1〇 2〇 to 5〇 or 6〇% of Mo present in an amount ears. The fluoropolymer of the invention green agent should not contain a shirt (four) unit, such as a phenyl group, a naphthyl group or a pyridyl group. As described above, the fluorine-containing resin may be present in one or more other resins. These additional resins may be fluorine-containing or non-fluorine-containing, but are not aromatic units. θ The resin component in the photoresist composition of the present invention should have a sufficient amount to satisfy satisfactory film formation characteristics. Reference is made to the preferred amount of the resin component in the examples below. [Photoactive ingredient] (Revised) 92065 22 1308256 A variety of photoactive ingredients can be used in the present invention. n is preferred. Particularly good pag for use in the photoresist of the present invention: comprising U匕5 (containing iodonium and bismuth compound); and nonionic age, ^, such as iodine, a compound of N-gammaimine lsAU(^ylr"imide) compound; diazo such as base compound and other ΓΓΓ α, [methyl ketone and bismuth, fluorinated benzylated δ, _, especially fluorinated nonionic

Contains aromatic substitution. _ Zi Na. Preferred PAGS No. In particular, preferred iodine gun PAGs include those shown by the following formula:

1. In the formula I, R and R are each independently substituted as desired, for example, a cycloaliphatic group such as a cyclohexyl group, an adamantyl group 1 borneol group; an ice ΐ ΐ 封基基, a twelfth base, etc. 】 2D alkyl; optionally substituted carbon-coated groups, such as phenyl, naphthyl, etc.; and optionally substituted heteroaromatic or heteroalicyclic, for example having 1 to 3 separated or fused rings And i to 3 groups of heteroatoms (N, 〇 or s) as % members; and X is a counter anion, for example, a carboxylate or sulfonate counter anion, preferably a sulfonate (_sor) or a carboxylate (_coo_) Is a C1 group, preferably substituted by one or more moieties, for example, as desired. A hospital base, especially a Cho-based group, which has a plurality of electron-withdrawing groups (for example, F or a dentate group, a nitro group, a cyano group, etc.), and a total group (especially 乂Cl-) a fluoroalkyl group is preferred; a substituted carbocyclic aryl group (for example, (amendment) 92065 1308256 benzyl or naphthyl); if desired, the substituted heteroaromatic has 1 to 3 partitions or A fused ring and a group of such as (such as N, 0 or S). ‘,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,

Κ 2' R3'

L R4 iN 0 SO2R s 〇 π In the formula, R is preferably an alkyl group which is optionally substituted, and is one or more of a fluorene group. Alkyl groups substituted by halogen or other halogen, nitro, cyano, etc. (for example, f is preferably CH. All oxygen is preferred); if necessary: take the whole gas base (special: ": base - To take

For example, a group having i to 3 divided or fused rings and i to 3 as two hetero atoms (N, 〇 or S). ',, ' is a group defined by K, preferably an aliphatic ring, R], R2, R3 and R4 are each independently hydrogen or R2 and R3 and/or R1 and R4 are formed together. The ring has, for example, 4 to about 8 ring members; and η is 1, 2, 3 or 4', preferably 1 or an aliphatic ring structure, and preferred PAGs of the formula include a fused form such as Π a PAGs : (修JL本) 92065 24 1308256

N0S0,R

Ho, where R, R1, R2, R, R, R, R3, and R4 are (preferably all; the same as above, the hydrogen of the formula 11) and X is a methyl group (,问 上述 上述 PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA碏PAGs are also suitable for use in the photoresist of the present invention: such as 5, which is suitable for 'g, includes a compound of the following formula: D, preferably 毓PAGs

RJ -S-R2 IR3 1 Heart R m3 are each independently selected from the same group as defined by R... In the two: upper..., the r ring mirror PAGs are defined as 丁 逑 ί. The best is shown in the following formula IV:

X

Ring members, IV: defined by the sample, the line indicator, a ring structure of the exhaustion 'the ring should have 5 to about - Di multiple intra-unsaturated bonds, and - or more; (Revised) 92065 25 1308256 base. The dotted line is preferably a non-aromatic ring, such as a ring saturated with thienyl 忒 π (without an intra-ring double bond). , 111 and 1 ^ 'the preferred counter anion X is a sulphonyl group, such as "perfluoro fluorenyl and "all gas burning oxygen" - both formate, all butyrate, perfluorohexane; ^

S salt, perfluorooctane sulfonate and perfluoroethoxyethyl sulfonate. S

Sub- ί / ί Γ PAGS can also be used in the light-blocking of the present invention, including non-ionic: PAGs, such as substituted di-Maple compounds; sulfonic acid compounds, including di-flavones, cyanide N' oxyimine a sulfonic acid compound; = a compound of a heavy decane bismuth; a nitrobenzyl compound; a compound of a substituted fluorenyl group; and a compound of (4) an acid compound comprising an oxynitride acid. Specifically, the preferred di-Maple (10) used in the photoresist of the present invention comprises the compound of the following formula V: 〇〇JZ: II !1 RSS-R2 II II Ο 〇 wherein R1 and R2 are as described above. Defined. Preferred oxime sulfonate pAGs for use in the photoresist of the present invention comprise a compound of the formula:

R1R2C=N0S(0)2Y m wherein R and R2 are as defined by the above formula, and/or R1 26 f (revision) 92〇65 i3〇8256 and κ are at least one of Yes. -12-dental alkyl (special knives: such as cyano, nitro, _alkyl ..., " perfluoroalkyl, such as -CF) deuterium), and other perfluoroalkyl, alkyl, etc.; γ is a non-hydrogen substituent, and it is defined by R in the above formula. The preferred diazonium PAGs of the 斤 卩 包含 包含 包含 包含 包含 包含 包含

I defined. The α-extension methyl two-milling comprises the following, wherein R and R2 are as described above for the preferred α formula of the photoresist of the present invention: 〇R2 〇R^SCS-R2 _- έ ^ 胤=' R] and R2 are the same or different and are other than hydrogen and are as described above. /3 and the same or different 'may be hydrogen or a non-hydrogen substituent, such as R of the above formula I & Preferably, at least one of r3 and r4 is not nitrogen, and more preferably both R3 and R4 are not hydrogen. ^The above-mentioned 'two-sided PAGS (that is, inserting the _ knife between the two maple parts) is also suitable for σ ' | 3 (: good ones inserted into the two parts of the maple part (for example, γ also IX) -N(R) - N (rd is substituted by one or two non-nitrogen substituents. The preferred two-sided PAGS for use in the photoresist of the present invention comprises the following formula: X (Revised) 92065 27 13〇8256 Compound:

__ 丨 JJL ? ?3 r 〇 R1- S -N -N - S - R2

II 〇〇 defines where, ... are the same or different, non-gas and should be the same as the formula b 0 蛊 Hr is the same or different 'may be a gas or non-hydrogen substituent, such as § § defined, and better At least one of R3W is not ',,, and more preferably, both R3 and R4 are not ammonia. (ie, the PAGS of the photo-resist of the present invention comprises a second indoleamine salt n) ', for example, a compound represented by the following formula X: 〇X 〇R]-S~NS-R2 wherein m2 is the same or different, Hydrogen should be like the formula 'and X is the counter ion.

A sufficient amount of one or more PAG radiations should be used in the photoresist to provide a developable: first total solids meter (except for the dissolution of 12 weights) or a plurality of PAGS, more preferably about 2 of the total solids; For example, see U.S. Patent Nos. 4'442, 1 97 and 4,642 9= and European Specialized Requests _3_ Synthetic Moth PAGS by means of a generally known method. See ^ ( MODIFICATION) 92065 28 1308256 94/1 0608 is a synthetic N-yellow oxyiamine test. For example, the production of diazo by the method disclosed in European Patent Application No. 7/8,368,1 and U.S. Patent No. 5,55,,,,,,,,, Maple PAGs. See also w〇〇〇/1〇〇56. [Alkaline Additive] As described above, the photoresist of the present invention may suitably include an ancillary additive. A relatively small amount of testability can be used. Additives (for example, photoactive ingredients = 0.1 to 2 or about 3% by weight), and can significantly improve the lithography efficiency, Weng # is the resolution of the developed photoresist relief statue. In particular, in this The addition of a suitable test compound to the photoresist of the invention can effectively suppress the undesired diffusion of photoacid to the subsequent exposure step. The masked area. The preferred basic compound is an amine compound comprising first, second, third and fourth grades. Generally, it is preferred to use amines which are not highly nucleophilic, which can avoid the alkaline additive and others. Unexpected reaction of components (for example, and/or solvent) of the photoresist composition. Specifically, it is generally preferred to use secondary and tertiary amines, particularly secondary and tertiary having large substituents between stereo spaces f The above-mentioned macro substituents may, for example, be an optionally substituted alkyl group having at least 3 or 4 carbon atoms, such as an alkyl group optionally substituted; having at least 3 or 4 carbon atoms, Substituted alkyl, such as optionally substituted, alkyl (containing a lipid steroid group, such as optionally substituted cyclohexyl, adamantyl, iso-ert, etc.) having at least 3 or 4 carbon atoms It is necessary to replace the soldering base, 'as it is replaced by (3_2 nonenyl; it has at least 3 or 4 carbon atoms to be substituted with an alkynyl group, such as an alkynyl group; if necessary, a substituted carbocyclic ring An aryl group such as a phenyl group; a substituted heteroaryl or heteroalicyclic group as required There is a heteroaryl or heteroalicyclic group having 1 to 3 heteroatoms (particularly or S) per ring to a diterpene or fused ring and having 1 to 3 heteroatoms (particularly or S). (4) The special additive for inclusion of the product contains: [4.0] eleven carbon + ene) Gu 1,5-diazobis ·:,] 壬-5ene); N, N-double handle ethyl chest Bis(2_=diazobicyclo[2.2.1]heptane; N-triisopropanolamine; dibutyl is (preferably its branched isomers such as diisobutylamine and di-t-butyl: And a 'tributylamine and its branched isomers (for example, di-t-butylamine and: di-tert-butylamine), etc., which are substituted as needed. D and other as needed, D Qinhua t is also suitable for those who are especially suitable for the replacement of the secret or by the "alcohol substitution", such as N_ethanol-based mu alcohol-based pulse. Potassium alkaline additive Also suitable, especially having from 5 to about 8 membered rings of one or more nitrogen ring members. Other preferred alkaline additives comprise hydroxyalkyl secondary and tertiary amines, for example, having at least one hydrazine, alkane a secondary and tertiary amine of the N-substituent of the group, the β & 20 & base having -, two, three or more via moiety 'typically having one or two hydroxyl moieties; alicyclic amine a class wherein at least one of the secondary or tertiary nitrogen is located at the junction or bridgehead of the bicyclic or polycyclic compound. The pyridylating compound is suitable for use, for example, dibutylpyridine and its polymers, such as poly(ethylene) Generally, §, polymeric alkaline additives are also suitable, for example, having a molecular weight of up to about 200, 300, 400, 500, 600, 7 〇〇, 800, 900, 10 (10) 1100, 1200, 1300, 1400 or 1500. Substituted amines. In a specific photoresist system, the alkaline additive should not substantially dry out. The light-stable active ingredient, that is, during the typical storage process of the photoresist, (Revised) 92065 30 1308256 does not react with the PAG. In particular, the selected alkaline additive is preferably in the photoresist composition. Undesired degradation of the photoacid generator can be avoided during the storage process, for example at room temperature (about 25 Torr) or under low temperature conditions such as freezing (eg 'about 5, 1 〇, 丨 5 or 丨 8 ° c), stored for 2, 3, 4, 5 or 6 months. Specifically, for a diimine containing pAG (for example, those represented by the above formula and EA) or a strontium iron compound (for example, the above formula I) For the photoresist of pAGs), it is preferred to use a secondary or tertiary amine, especially a hindered secondary or tertiary amine such as a monocyclic, bicyclic or tricyclic amine such as nitrogen as a ring member, such as DBU, DBN; alkylated pyridines, such as pyridines substituted with one or more u alkyl groups; optionally substituted quinolines; optionally substituted piperidines; Pyrazines, etc. In addition to the aliphatic steroidal alkaline additive with nitrogen % member, it is used with imiline sulfonate and iodonium PAG Preferred for s bonding are acyclic secondary and tertiary amines having one or more alkyl substituents having at least about * carbon atoms. One or more alkyl groups (eg, alkyl) Substituted hindered secondary and tertiary amines are also suitable for use with iodonium pAG. Carboxylate additives (eg, carboxylates such as ammonium carboxylates) are less suitable for use with diimine The carboxylate additive should not be used together with iodonium PAG. In the photoresist composition, the appropriate amount of the basic additive is 以· based on the total solid amount of the photoresist (all components except the solvent). Μ 5 wt%, preferably 总 5 to 2 wt% of total solids. [Dissolution Inhibitor Compound] The preferred dissolution inhibitor compound of the photoresist of the present invention is polymerized and/or (modified) 92065 31 ί3 〇 8256 or includes a fluorine substitution. As described above, those containing a photoacid-labile group, for example, = the inhibitor compound contains - generally also a low molecular contact substance = = part. 5, _, more preferably a polymer or oligomer of less than about 4, _ ^. Gas... '00, 1,000 or 500 formulation compounds. The compound or oligomer is particularly soluble. The dissolution inhibitor may also be non-polymerized (ie, bit). For example, a variety of non-¥ people" 3 have a heavy early

The composition of the solution is also suitable for the cold solution inhibitor of the photoresist of the present invention, especially the fluorinated substance. For example, a poorly fluorinated polymer 'contains a fluorinated steroid combination: an acid (4) such as cholic acid, deoxycholic acid, succinic acid deacetyl choline, and a third butyl bile 2 The steroidal compound can be obtained by making the known class (4) y: carbon, which is a gas-extension methyl group. Such a non-polymeric compound 'has: a photoacid-labile group' such as an acid-labile vinegar or a secret moiety. Above, solids meter (all components except solvent), = compound can be suitably about ", to 5 or more weight % solution = total solids of the agent °, 1 to 1 weight one in light [interface activity] Agents and leveling agents] The surfactants and leveling agents for the photoresists of the present invention include, for example, a bis-compound and an ionic salt, such as an ammonium compound. A preferred example of a surfactant and a leveling agent is "II Tot 76. 4 (available from Uni〇n Carblde). (Revised) 92065 32 1308256 FC-430 (purchased from 3M Asia) Amine sulfonate) (10) (including

Modafl〇w (acrylic acid vinegar substance). , • a mixture of sub-components; a ~ Bayer surfactant and a homogenized addition amount of δ, such as the above-mentioned dissolution inhibitor compound. Sheet^ [Plasticizer Compound] As described above, the photoresist material of the present invention can be made of a compound or a plurality of plasticizers; and: == a deposited photoresist layer Unexpected cracking or adhesion of the L-layer to the underlying material. Preferably, the month w' has, for example, - or a plurality of heteroatoms (especially, the preferred material has a molecular weight of about 2q to the surface, and is about 20 to about 50, 60, 7 Π ' Μ (U 80, 90, 100, 15 〇, 2 〇〇, (4), 300, 400 or 500 ' For example, vinegar, such as bis(2-butoxyethyl hydrazine) Γ 癸 ( (four) and sulphuric acid) hexamethylene ester , bis(2-butoxyethyl)decyl phthalate; bis(2-butoxyethyl)decanoic acid, w 酞 曰 IS曰, 2-butoxyethyl oleate; Sour vinegar; diisodecyl glutaric acid; and poly(ethylene glycol), = polyalcohol) acrylic, poly(ethylene glycol) bis(2-ethylhexanoic acid), 1 An acid ester, a poly(ethylene glycol) dioleate, a poly(ethylene glycol) fl, an early oleate, a tris(ethylene glycol) bis(2-ethylhexanoic acid) or the like. ▲ based on the total solids (all components except the solvent), or a plurality of plasticizer compounds may suitably be from about 0.5 to 10 or more by weight, more preferably from 0.5 to 5 of the total solids of the first resist An amount of 3% by weight is present in the photoresist composition. As stated above, various parts of PAGs, alkaline additives, resin units: and other components of this 'month's photoresist may be replaced by 'typically square, 12 or 3 positions' via multiple carbons -竣 key with one or more appropriate 33 (amendment) 92065 1308256 two groups, such as dentate (special 〇, cl5tBr); Ci8^; c] 'C2-8 county; ^ lack of base; A brewing group, such as a calcined base, a carbocyclic aryl group such as a phenyl group, etc., and an aromatic group is less suitable for use due to excessive exposure to radiation. = replace the money '- pure or at least as follows - the group of atoms (preferably fluorine), such as fluorinated silk, perfluorinated "two:: Cw alkenyl; fluorinated C3_8 cycloalkyl, · And fluorinated _ (package: base) and vinegar (including a vinegar), including fluorinated ring test and fluorinated % vinegar. Also available in alkyl, alkenyl and block groups, unless otherwise modified, : a group (although the cyclic group includes at least three rings:), and the alkoxy group of the group preferably has from 1 to (4) to about 164 of a silk group. a group having 13 one or more groups, typically 1, 2 or 2, a carbocyclic aryl means having 1 to 3 partitions or %' and having 6 to about '18 A non-heteroaromatic group of bismuth, which can be extracted from bis, =, phenyl, fluorenyl, phenanthryl, etc. usually phenyl and 1, 2, heteroaromatic and heteroaryl The regiment has 1, 1 3 rings.

Is)"": from iV to 8 ring members, and 1 to about 3 heteroatoms (N, 〇). (4) Suitable material base 15 includes, for example, a ny ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari ari 。 。 。 。 。 。 。 。 。 。 。 。 。 The base, the base, the base, the stray and the oxime group of the present invention can be easily prepared by those skilled in the art. (Revised) 92065 34 1308256 For example, a photoresist composition of the present invention is prepared by dissolving a component of a photoresist in a suitable solvent as disclosed herein, and a suitable solvent, for example, and a blend of lactic acid, which is A preferred solvent. Typically, the solids content of the composition varies within a range of from about 5 and 35 weights of the total weight of the photoresist composition, and more typically from 5 to about 12 or 15% by weight. The resin conjugate and light The active ingredient should be present in an amount sufficient to provide (4) a coating and form a good quality latent image and relief. See the following examples for illustrating preferred amounts of photoresist composition. The compositions of the present invention are generally Known procedure. The liquid coating composition of the present invention can be applied to the base coating by spin coating, dip coating, roll coating or other conventional coating techniques, The weight of the coating, the viscosity of the solution, the speed of the spin coater, and the coating time are adjusted to adjust the solid content of the coating solution to provide the desired thinness. The light of the present invention. The resist composition is suitable for application to a conventional substrate, and includes a substrate coated with a photo-resist in its process. For example, the contact can be applied to a substrate for manufacturing a microprocessor and other integrated parts. Round or coated with cerium oxide. Aluminum-alumina, arsenic Ceramic, quartz, copper, glass substrates, etc. are also suitable for use. - After the light is blocked on the surface, it is dried by heating to remove the solvent until the photoresist coating is not sticky. After that, it is imaged through a photomask by the conventional method. The exposure is sufficient to cause the photoactive activity in the photoresist system to be effectively activated, so as to be visible in the photoresist coating. In particular, the exposure energy is in accordance with the exposure tool and the (corrected) 92065 35 1308256 light p 'and the composition of the composition, the typical range is from about 丄 to loo out] heart 2. As mentioned above, The coating of the photoresist composition of the present invention is preferably photoactivated by short exposure, in particular, the secondary _mn, the secondary ηηη, and the second η: the exposure wavelength 'especially 157 nm is a particularly preferable exposure wavelength. The inventive photoresist composition is also suitable for imaging at longer wavelengths. For example, the resin can be formed with a suitable PAG and an optional sensitizer, and is imaged at longer wavelengths such as about 193 nj^ 248 nm. Ϊ́βη. The film layer of the composition after the light is preferably from about 70 ° C to about 0 ° The temperature range is obtained. After that, the (4) material is provided with a polarity (4) to provide a light 総 (4) film positive (4), preferably a shadow agent, such as a quaternary hydroxide solution, such as a tetrazide = compound: a plurality of amine solutions 'preferably Ο, tetramethyl = mercaptoamine, n-propylamine, diethylamine, di-n-propylamine, :monoethylamine; alkanolamines such as diethanolamine or triethylamine Example Tao, (4). It can also be developed by electricity.

• δ 'development after the development of the photoresist coating on the general m I in the art, the developed substrate technology: the two-dose region is selectively treated, for example, according to the second order, No optical domains are processed on the substrate by chemical or mineral coating. For the manufacture of microelectronic substrates, for example, the manufacture of a wafer, a suitable etchant comprises a gas etchant, such as a chlorine or gas-based (four) agent, for example,

22 or 2 or CF4/CHF3. After such processing, the photoresist is removed from the processed substrate using known secret procedures. J (Revised) 92065 36 1308256 All documents mentioned herein are incorporated herein by reference. The following non-limiting examples are illustrative of the invention. [Examples] Example 1 : Preparation of Photoresist of the Present Invention The photoresist of the present invention is prepared by the following components, wherein the amount is expressed by weight % of solid (all components except solvent), and The photoresist is prepared in a 90% liquid formulation: Field balance 5 0. 5 10 0. 2 0.6 Add to solids 10% Ingredients

Photoresist, lj PAG, additive, dissolution inhibitor, surfactant, plasticizer, solvent, photoresist, 'the resin is a fluorine-containing terpolymer, diluted from raw borneol, butyl acrylate vinegar and tetrafluoroethylene It is composed of (10)) units, which are prepared by radical polymerization of 1 =; the pAG is a combination of the above-mentioned formulas, wherein X is a mercapto group and Rg~CF3; the test additive is DBU; It is fluorinated bile acid; the surfactant is called; poly (ethylene glycol) dioleate; and the solvent is 3" eight-heptanone and ethyl lactate. The composition is spin-coated to the $ $ 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 真空 真空 真空The resist coating layer is exposed, and then the exposed coating layer is subjected to post-exposure baking at 110 ° C. The coated wafer is then treated with 0.26 N water-soluble tetramethylammonium oxide solution. The imaged photoresist layer is developed to provide a relief. θ The above disclosure of the present invention is merely for explaining the present invention, and it should be understood that == no (four) the present invention (10) Lee Yun spirit and scope of the various changes and modifications set.

3S (Revision) 92065

Claims (1)

1308256 **** Supplement I X. Patent Application Range 1. A photoresist composition imaged at a wavelength of 200 nm, comprising a gasification resin, a photoactive component of 1 to 15% by weight of the total solid content of the photoresist composition of the photoresist, and a solvent component present in an effective dissolved amount - the solvent component comprises a mixture of two or more different solvents 'wherein one of the different solvents does not contain a nano-portion, and the solvent component is not methyl ethyl ketone and The solvent component of chlorine. 2. The photoresist composition of claim 1, wherein the solvent component comprises heptanone. 3. The photoresist composition of claim 1, wherein the solvent component comprises cyclohexanone. 4. The photoresist composition according to any one of claims 1 to 3, wherein the solvent component comprises ethyl lactate. The photo-resistance grade of any one of the above-mentioned claims, wherein the solvent component comprises propylene glycol mercaptoether acetic acid, such as the photoresist, composition of any one of claims 1 to 3. Wherein the solvent component comprises two or more solvents which form a room temperature azeotrope. The photo-resistance composition according to any one of claims 1 to 3, wherein the solvent component comprises two or more selected from the group consisting of hexylethylidene ketone; decyl ethyl ketone; Alcohol ethyl propylene glycol decyl ether acetate; amyl acetate; decyl isoamyl steel; ethylene glycol decyl ether acetate; methyl amyl acetate; ethylene glycol (modified JL) 92065 39 1308256 Labeled acetic acid vinegar; ethyl n-butyl hydrazine. Methyl + pentanol (hexanol); ethylene glycol with isobutyric acid butyl ketone; 2 monobutyl ether; methyl hexanoate; Propylene glycol benzotriene; benzoic acid.r -?r Gugui (isopropylbenzene): alcohol;: two: base vinegar vinegar, Bu 12% hexanol, 1,3,5-trimethyl 1 Eleven = alcohol dimethyl (tetra) (diethylene glycol dicarboxylic acid di-n-propyl phthalate; diacetone alcohol; Bu-Is-butyl ketone; carbon diol butyl ether group; door; and C.申 a主宙立丨#个问〉谷剂. A May patent dry circumference items 1 to 3, wherein the composition consists of three kinds of photoresist composition of ~7 - a kind of light with sub-nm wavelength imaging Heavy different solvents. The total solids of the resist composition package Save ~ effective ingredient and two to - parts by weight 'which comprises a solvent component selected from the group consisting of Solution 3: the presence of a solvent to 酉同; glycol glycol, 3~g-class; ethyl-n-pentyl-ethyl ether; acetic acid, glutinous. field #ethylene glycol ether acetate t. , T-based oxime, amyl ketone; Acetate; Ethyl, methyl vinegar, ethylene glycol ketone-1-pentanol; isobutyl isobutyrate; 2-Han and C hexanol; Ethylene; · ethylene propylene glycol hexaethylene diphenyl benzene; anisole.r, known, cumene (isopropyl benzene); alcohol; cyclohexanol; 〗 〖 monool ethyl vinegar acetate; 1-tridecanediol Dimethyl surface (diethylene glycol -: this '" vinegar; di-n-propyl diacetate ' _ ' -:) 'isobutyl ketone; carbon diol butyl alcohol '· ethylene glycol butyl And the solvent of the group formed by C. (Revised) 92065 40 1308256 10· A photoresist formed by the wavelength of 2 〇〇nm, : 匕 resin, the total composition of the photoresist The i to 5% of the solid amount, the first active ingredient, and the solvent present in an effective amount of the solvent: the solvent component comprises a mixture of three or more different solvents, wherein the scope of the patent application is Photoresist composition solvent The fraction includes heptanone. 12. If the patent application scope is item 10, the solvent component includes cyclohexanone. The photoresist composition, wherein the solvent component comprises the ethyl lactate component, wherein the solvent component of the π τ component is in the range of the first to the second. 14. The photoresist composition of any one of claims 1 to 12 wherein the solvent component comprises propylene glycol methyl ether acetate. The photo-resist composition of any one of claims 1 to 12 wherein the solvent component comprises at least two solvents which can form a warm azeotrope. 16. The photoresist composition according to claim 10, wherein the solvent component comprises three or more selected from the group consisting of heptanone; ethyl n-pentyl hydrazone ethyl ethoxide; propylene glycol decyl ether acetic acid; acetic acid;酿 brewing; mercaptoisoamyl ketone; mercaptoethyl hydrazine; ethylene glycol hydrazide acetate; hydrazinoacetate ;; ethylene glycol hydrazino-acetic acid g; ethyl n-butyl group; isobutyric acid Ding, 2-mercapto 1-pentanol (hexanol); ethylene glycol propyl ether; propylene glycol tert-butyl ether; cesium hexanoate 41 (amendment) 92065 Ϊ 308256 3 曰, ethyl hexanoate '· dry Alkene (isopropylbenzene); xylene; benzene surface; ethylene glycol ethyl ether acetate; _ tridecyl alcohol, cyclohexanol; ], 3, 5-trimethylbenzene; hexyl acetate Diethylene glycol dimethyl ether (diglyme); diisobutyl ketone; di-n-propyl carbonate; acetone; ethylene glycol butyl ether; and propylene glycol butyl ether Different solvents of the group. I7' - a photoresist composition imaged at a wavelength of 20 Å nm, including a fluorinated resin, a total solids content of the photoresist composition to 5% by weight of the photoactive component, and a solvent present in an effective amount of dissolution The component contains a halogenated solvent, but the solvent component is not a solvent component composed of chlorobenzene or methyl ethyl ketone. 18. The photoresist composition of claim 17, wherein the composition comprises a fluorinated solvent. The photoresist composition of the item, wherein the composition of the first aspect of the invention includes a fluoroether solvent. 20. The photoresist of any one of claims 17 to 〒, wherein the solvent component comprises heptane. 21. A photoresist according to any one of claims π to 1 wherein: the solvent component comprises cyclohexanone. 2 2. In the case of the patent application range No. 17 to 19, the cup is s々丄 ^ the photoresist of any one of the shellfish: the substance, wherein the solvent component includes ethyl lactate. The photo-resist composition of any one of claims 17 to 19, wherein the solvent component comprises di-glycol decyl ether, g s, 0 (Revised) 92065 42 1308256 2 4. The photoresist composition according to any one of claims 1 to 19, wherein the solvent component comprises at least two solvents which form a room temperature azeotrope. The photoresist composition according to any one of claims 1 to 19, wherein the solvent component comprises at least three different solvents. The photoresist composition according to any one of claims 1 to 19, wherein the solvent component comprises one or more selected from the group consisting of heptanone; ethyl n-amyl ketone; ethylene glycol ethyl Ether; propylene glycol decyl ether acetate; amyl acetate; methyl isoamyl ketone; ethylene glycol decyl ether acetate; methyl amyl acetate; ethylene glycol decyl ether acetate; Butyl ketone; isobutyl isobutyrate; 2-mercapto 1-pentanol (hexanol); glycol propyl ether; propylene glycol tert-butyl ether; methyl hexanoate; ethyl hexanoate; (isopropylbenzene); diphenylbenzene; phenyl hydrazine ether; ethylene glycol ethyl ether acetate; 1-tridecyl alcohol; cyclohexanol; 1,3,5-trimercaptobenzene; hexyl acetate; a group consisting of diethylene glycol dimethyl ether (diglyme); diisobutyl ketone; di-n-propyl carbonate; diacetone alcohol; ethylene glycol butyl ether; and propylene glycol butyl ether Solvent. 27. A photoresist composition imaged at a wavelength of 20 nm, comprising a fluorinated resin, from 1 to 15% by weight of the total solids of the photoresist composition, and a solvent component present in an effective amount of dissolution. The solvent component includes water. 2 8. The photoresist composition of claim 27, wherein the water system does not exceed about 3% of the total solvent of the composition. 43 (amendment) 92065 1308256 2 9. The photoresist composition of claim 27, wherein the solvent component comprises heptanone. The photoresist composition according to any one of claims 2-7 to 29, wherein the solvent component comprises cyclohexene. The photoresist composition according to any one of claims 2-7 to 29, wherein the solvent component comprises ethyl lactate. 3. The photoresist composition according to any one of claims 2-7 to 29, wherein the solvent component comprises propylene glycol methyl ether acetic acid SI 0 3 3. In the scope of claims 27 to 29 A photoresist composition according to any one of the preceding claims, wherein the solvent component comprises two or more solvents which form a room temperature azeotrope. The photoresist composition according to any one of claims 2-7 to 29, wherein the solvent component comprises three or more different solvents. The photoresist composition according to any one of claims 2-7 to 29, wherein the solvent component comprises one or more selected from the group consisting of heptanone; ethyl n-amyl ketone; Ketone; ethylene glycol ethyl ether; propylene glycol decyl ether acetate; amyl acetate; decyl isoamyl ketone; ethylene glycol decyl ether acetate; methyl amyl acetate; ethylene glycol decyl ether Acetate; ethyl n-butyl ketone; isobutyl isobutyrate; 2-methyl 1-pentanol (hexanol); ethylene glycol propyl ether; propylene glycol tert-butyl ether; decyl hexanoate; Ethyl hexanoate; cumene (isopropylbenzene); diphenylbenzene; methyl ether; ethylene glycol ethyl ether acetate; 1-13 44 (amendment) 92065 1308256 tyros; hexanol; 3, 5-trimethyl phenyl; acetic acid hexahydrate; diethylene glycol dimethyl _ (diethylene glycol dimethyl diisobutyl ketone; di-n-propyl carbonate; diacetone alcohol; ethylene glycol butyl ether; And a solvent of the group consisting of propylene glycol butyl ether. 36. A photoresist composition imaged by the second 200-wavelength, including a gasification resin, 丨 to 15% by weight of the total solid content of the photoresist composition Light work")·Generate And a solvent component present in an effective amount of the solvent, which comprises ethyl lactate. 37. The photoresist composition of claim 36, wherein the paint composition comprises the same. 38. In the photoresist composition of claim 36 or 37, the solvent component comprises cyclohexanone. 39. The photoresist component of claim 36, wherein the solvent component comprises propylene glycol decyl ether acetate. 40·/ The photoresist composition Y imaged at a wavelength of 20 nm nm includes a fluorinated resin, a photoactive component of 1 to 1% by weight of the total solid content of the photoresist composition, and an effective dissolved amount. The solvent is a cliff, and the solvent component includes a solvent. 4! A photoresist composition imaged at a sub-20 nm wavelength, comprising a gasification resin, a photoactive component in an amount of from 1 to 15% by weight of the total solids of the photoresist composition, and a solvent component present in an effective amount of dissolution. The granule component comprises two or more solvents which can be upgraded into a chamber and a boiled mixture. 4 2 · The photoresist composition of claim 41, wherein the (revision) 92065 45 1308256 solvent component comprises three or more different solvents. 43. The photoresist composition of claim 41, wherein the > cereal component comprises four or more solvents. 17, 27, 36, 40 and its 'the photoactivity into 17, 27, 36, 40 and its 'the photoactivity into 17, 27, 36, 40 and its 'the photoactivity becomes 44_ as claimed in the first range The photoresist composition of any one of the members of the present invention includes one or more iodonium compounds. The photoresist composition according to any one of claims 1, 9, and 10, includes one or A variety of bismuth compounds. 4 6. For example, if the photoresist composition of any one of the scopes of claim 1, 9, 10 4, 1%, (4) is a knife, including imidosulfonate, N-sulfonate N-sui; f〇nyl〇xyimide, diazonium sulfonyl compound 'α, α - hydrazinyl bismuth, bismuth sulphate, sulphate, and disulfonamide. The photoresist composition according to any one of claims 1, 9, 10, 17, 27, 36, 4, 41, wherein the photoresist group comprises one or more selected from the group consisting of alkali A substance consisting of a sexual additive, a dissolution inhibiting compound, a surfactant, and a plasticizer. ' 48. The photoresist composition of any of the items 1, 9, 1G, 17, 27, 36, 40, 41 of the claim, wherein the fluorinated I or the genus corresponds to the above formula ( A) The polymerization unit of the structure of (S). Hall a (amendment) 92065 46 1308256 27, 36, 40 and ' § hai resin including 4 9. If the patent scope of the scope 1, 9, 1, 1, 177, 41, the photoresist composition, The group represented by the following formula: Υ-Ζ where Ρ is 0 or OCHi where 'X is (-ch2-)p -CH2OCH2- or -ch2〇-; P is 1 or 2 in the chemical bond connecting oxygen and group z; -^0_ Or CHR〇..., (~CH2) fluorenyl; and wherein R is Cl-16 z is alkyl 'dialkyl carboxylic acid aryl — 50. such as a base; a ring, a methyl group; Carbocyclic aryl; c] -] 6 fluorenyl; acetamidine. 况 carbonyloxy; such as hydrazine, four gas 〇 喃 喃 or four gas blowing thiol. 41. A photoresist composition according to any one of the preceding claims, wherein the fluorinated tree month comprises - or a plurality of the above formula (P), (Q) The unit of polymerization defined by the structure of (R) and/or (s). A photoresist composition according to any one of claims 1, 9, 10, 17, 27, 36, 40, 41, wherein the photoresist group comprises an inspective additive, which may be ruthenium, 8_diazobicyclo[5. 4. T-carbene (DBU); i,5_diazobicyclo[4. 3·0]壬-5 ene (DBN); N,N-double~(2~hydroxy Ethyl)piperazine; N,N-bis(2-47 (amendment) 92065 1308256 ethyl)-2,5diazobicyclo[2.2.1]heptane; N-triisopropanolamine, dibutyl Amine; tributylamine; can be substituted as needed; and other as needed. The photoresist composition according to any one of claims 1, 9, 10, 17, 27, 36, 40, and 41, wherein the photoresist composition comprises an alkyl secondary amine and a hydroxyl group. Alkyl tertiary amines. 53. If the patent application scopes 1, 9, 10, 17, 27, 36 ' 40 and A photoresist composition according to any one of the items 41, wherein the photoresist composition comprises a polymeric amine. The photoresist composition according to any one of claims 1, 9, 10, 17, 27, 36, 40. 41, wherein the photoresist group includes a fluorinated dissolution inhibitor . 55' ^ Photoresist composition of claim 54 wherein the /recombinant inhibitor is a steroid compound. 17, 27, 36, 40 wherein the photoresist group 17, 27, 36' 40, wherein the photoresist group 6. The photoresist of any one of the claims 1, 9, and 10 λ 1 The composition does not include a polymer-based dissolution inhibitor. The photoresist composition as claimed in claims 1, 9, and 10 of the claims includes a plasticizer substance. 58·=The photoresist composition of claim 57, wherein 59=: includes - or a plurality of oxygen or sulfur atoms. The photo-resist composition of item 58 of the monthly patent range wherein the plasticizer is ρ-diester, sebacate, phthalate or poly (48 (Revised) 92065 1308256) /7 6 Ο. Forming a photoresist relief statue _ ^ Applying a resist composition coating to a substrate as in any one of claims 1 to 59; and exposing the photoresist coating The activating radiation having a wavelength of less than 200 nm is developed and the exposed photoresist coating is developed. The method of claim 60, wherein the photoresist coating is exposed to radiation having a wavelength of less than about 170 ηη. 62. The method of claim 60, wherein the photoresist coating is exposed to radiation having a wavelength of about nm57 nm. 63. An article of manufacture comprising a substrate coated with a coating of a photoresist composition according to any one of claims 1 to 3. 64=Applicable to the product of item (5) of the patent scope, which is called the electronic wafer substrate. . 6 5. If you apply for a patent.祀国弟w贝衣衣. The port, wherein the substrate is a pre-electric element substrate. (Revised) 92065 49