WO2002082544A3 - Procede, systeme et dispositif de circuit electronique - Google Patents

Procede, systeme et dispositif de circuit electronique Download PDF

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Publication number
WO2002082544A3
WO2002082544A3 PCT/US2002/010650 US0210650W WO02082544A3 WO 2002082544 A3 WO2002082544 A3 WO 2002082544A3 US 0210650 W US0210650 W US 0210650W WO 02082544 A3 WO02082544 A3 WO 02082544A3
Authority
WO
WIPO (PCT)
Prior art keywords
electronic circuit
circuit device
caen
nanometers
cmos
Prior art date
Application number
PCT/US2002/010650
Other languages
English (en)
Other versions
WO2002082544A2 (fr
Inventor
Seth Copen Goldstein
Daniel L Rosewater
Original Assignee
Univ Carnegie Mellon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Carnegie Mellon filed Critical Univ Carnegie Mellon
Priority to AU2002307129A priority Critical patent/AU2002307129A1/en
Publication of WO2002082544A2 publication Critical patent/WO2002082544A2/fr
Publication of WO2002082544A3 publication Critical patent/WO2002082544A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne une nanotechnologie électronique assemblée de façon chimique (CAEN) offrant une alternative à l'utilisation de semiconducteur complémentaire à l'oxyde de métal (CMOS) afin de construire des circuits avec des largeurs de ligne dans des dizaines de nanomètres. Un verrou moléculaire et un procédé utilisant ce verrou lui permet d'agir comme un dispositif de maintien, de rétablir une tension, et de fournir une isolation E/S.
PCT/US2002/010650 2001-04-03 2002-04-03 Procede, systeme et dispositif de circuit electronique WO2002082544A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002307129A AU2002307129A1 (en) 2001-04-03 2002-04-03 Electronic circuit device, system and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28116801P 2001-04-03 2001-04-03
US60/281,168 2001-04-03

Publications (2)

Publication Number Publication Date
WO2002082544A2 WO2002082544A2 (fr) 2002-10-17
WO2002082544A3 true WO2002082544A3 (fr) 2003-10-30

Family

ID=23076216

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/010650 WO2002082544A2 (fr) 2001-04-03 2002-04-03 Procede, systeme et dispositif de circuit electronique

Country Status (3)

Country Link
US (2) US6777982B2 (fr)
AU (1) AU2002307129A1 (fr)
WO (1) WO2002082544A2 (fr)

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US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
WO2003063208A2 (fr) * 2002-01-18 2003-07-31 California Institute Of Technology Architecture en reseau pour dispositifs electroniques moleculaires
JP2006512782A (ja) * 2002-07-25 2006-04-13 カリフォルニア インスティテュート オヴ テクノロジー サブパターン転写ナノスケールインターフェースの確率的組立体
EP1388521B1 (fr) * 2002-08-08 2006-06-07 Sony Deutschland GmbH Méthode de fabrication d'un structure crossbar de nanofils
US8004876B2 (en) * 2002-08-30 2011-08-23 Hewlett-Packard Development Company, L.P. Configurable molecular switch array
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
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Also Published As

Publication number Publication date
US6777982B2 (en) 2004-08-17
AU2002307129A1 (en) 2002-10-21
US20020175390A1 (en) 2002-11-28
US7064000B2 (en) 2006-06-20
US20040257736A1 (en) 2004-12-23
WO2002082544A2 (fr) 2002-10-17

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