WO2002078749A2 - Source de plasma rf a pression atmospherique utilisant l'air ambiant et des gaz moleculaires complexes - Google Patents

Source de plasma rf a pression atmospherique utilisant l'air ambiant et des gaz moleculaires complexes Download PDF

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Publication number
WO2002078749A2
WO2002078749A2 PCT/US2002/008752 US0208752W WO02078749A2 WO 2002078749 A2 WO2002078749 A2 WO 2002078749A2 US 0208752 W US0208752 W US 0208752W WO 02078749 A2 WO02078749 A2 WO 02078749A2
Authority
WO
WIPO (PCT)
Prior art keywords
atmospheric pressure
plasma
complex molecular
gases
plasmas
Prior art date
Application number
PCT/US2002/008752
Other languages
English (en)
Other versions
WO2002078749A3 (fr
Inventor
Jaeyoung Park
Ivars Henins
Original Assignee
The Regents Of The University Of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Regents Of The University Of California filed Critical The Regents Of The University Of California
Priority to AU2002306800A priority Critical patent/AU2002306800A1/en
Publication of WO2002078749A2 publication Critical patent/WO2002078749A2/fr
Publication of WO2002078749A3 publication Critical patent/WO2002078749A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • A—HUMAN NECESSITIES
    • A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
    • A23L—FOODS, FOODSTUFFS, OR NON-ALCOHOLIC BEVERAGES, NOT COVERED BY SUBCLASSES A21D OR A23B-A23J; THEIR PREPARATION OR TREATMENT, e.g. COOKING, MODIFICATION OF NUTRITIVE QUALITIES, PHYSICAL TREATMENT; PRESERVATION OF FOODS OR FOODSTUFFS, IN GENERAL
    • A23L3/00—Preservation of foods or foodstuffs, in general, e.g. pasteurising, sterilising, specially adapted for foods or foodstuffs
    • A23L3/26—Preservation of foods or foodstuffs, in general, e.g. pasteurising, sterilising, specially adapted for foods or foodstuffs by irradiation without heating
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
    • A61L2/0005—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor for pharmaceuticals, biologicals or living parts
    • A61L2/0011—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor for pharmaceuticals, biologicals or living parts using physical methods
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61L—METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION OR DEODORISATION OF AIR; CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES; MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS OR SURGICAL ARTICLES
    • A61L2/00—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor
    • A61L2/02—Methods or apparatus for disinfecting or sterilising materials or objects other than foodstuffs or contact lenses; Accessories therefor using physical phenomena
    • A61L2/14—Plasma, i.e. ionised gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
    • H01S3/09705—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser with particular means for stabilising the discharge

Definitions

  • the primary objective of the present invention is to modify selected surfaces.
  • This modification can include film deposition, contamination removal, surface material removal, known as etching, or changes in the physical state or property of the surface, known as surface modification.
  • the present invention accomplishes this using complex gases that have heretofore been considered unlikely candidates for use in atmospheric pressure plasmas. This renders operation of such plasma processing much less expensive since expensive noble gases are not employed.
  • an atmospheric pressure rf plasma processor wherein a plasma is created between two electrodes using high frequency rf power of greater than 27.12 MHz.
  • an atmospheric pressure rf plasma processor wherein a plasma is created between two electrodes using a mixture of gases, the improvement comprising using a complex molecular gas as a majority component of said mixture of gases.
  • the present invention concerns the plasma source design that allows the use of a complex molecular gas system as a major portion (> 50% by volume) of the feedgas .
  • a complex molecular gas system as a major portion (> 50% by volume) of the feedgas .
  • the production of stable, steady-state, non-thermal atmospheric pressure plasmas was achieved by using various noble gases such as helium or argon as a majority feedgas to prevent arcing.
  • this invention overcomes this limitation.
  • this invention greatly simplifies the use of stable, steady-state, non- thermal atmospheric pressure plasmas by eliminating the need of a separate gas supply of rare and expensive noble gases. This improvement may be critical for the practical use of atmospheric pressure plasmas in many applications.
  • this invention explicitly demonstrates the operation of non-thermal atmospheric pressure plasmas using complex molecular gas mixtures such as ambient air, carbon dioxide, and an acetylene and hydrogen mixture. Therefore, this invention provides the basis for the use of atmospheric pressure plasmas for many different applications that may require a particular feedgas mixture to Obtain desired reaction chemistry, without the complication of using a noble gas as the majority feedgas .
  • This present invention uses high frequency rf fields to produce atmospheric pressure plasmas, that are steady- state, volumetric, homogeneous and non-thermal, but uses complex molecular gas mixtures, such as air, carbon dioxide, acetylene with hydrogen, as the majority (> 50% by volume) component of the feedgas .
  • the plasma source consists of two closely spaced metal electrodes, one grounded and the other powered by a high frequency (-100 MHz) power supply.
  • one of the electrodes is covered with a thin dielectric material . It was found that the dielectric cover on at least one of the electrodes is necessary to prevent arcing in an air plasma. However, in the case of carbon dioxide, the dielectric insulator is not needed to produce stable, steady-state plasmas at atmospheric pressure. It is noted that the electrical characteristics of the source are not affected by the use of a dielectric layer because the rf displacement current readily passes through the dielectric. The use of dielectric cover provides a significant advantage over a naked metal electrode because of the much wider variation of secondary electron emission coefficients in dielectrics compared to metals.
  • the same system has also produced a stable, steady-state, non-thermal plasma using either 100 % carbon dioxide (C0 2 ) gas or a gas mixture of acetylene and hydrogen at a gas pressure of up to 900 torr. Furthermore, a stable, steady-state, non-thermal plasma using 100 % carbon dioxide (C0 2 ) gas at a gas pressure of up to 850 torr without a dielectric cover has been produced between two aluminum electrodes.
  • a major innovation of this invention is to use high frequency electric fields of ⁇ 100 MHz or more with common complex gases . This increase in frequency enhances the discharge stability, as discussed by several studies of rf ⁇ -mode discharges for gas lasers. In addition, the ability to control the secondary electron emission characteristics of the electrodes is also an important part of this invention. Based on these findings, it is expected that it will be possible to use even higher frequencies from a few hundred megahertz to even microwave frequencies, such as 2.45 GHz, to produce stable atmospheric pressure plasmas using complex molecular gases.
  • atmospheric pressure air plasmas can be used in various materials processing applications since the air contains reactive gases like oxygen and nitrogen. It has been demonstrated the removal of photo-resist from a silicon wafer using air plasmas at an etch rate over 1.5 ⁇ m/min.
  • the present invention is an improvement of rf ⁇ -mode plasma sources for gas lasers and Atmospheric Pressure Plasma Jet (APPJ) technology, combining the benefits of two existing technologies. By operating at atmospheric pressure, this invention increases the operating gas pressure of rf ⁇ -mode plasma sources for gas lasers.
  • APPJ Atmospheric Pressure Plasma Jet
  • this invention overcomes the limitation of existing APPJ technology which requires the use of noble gases as a major feedgas to prevent arcing. Therefore, this invention simplifies the plasma source design that can be used for a wide range of practical applications. In particular, the plasma source using ambient air is operable without having to utilize a pressurized gas supply system, which is both expensive and dangerous.
  • the present invention changes the field of atmospheric pressure plasma technology radically in that stable, steady-state, non-thermal atmospheric pressure rf plasmas can be produced without the use of helium or argon as a majority species.
  • the present invention provides a very attractive means to utilize the potential of atmospheric pressure plasmas for many industrial processes .
  • semiconductor manufacturing, waste treatment, textile modification, and food and medical sterilization are some that may benefit from this technology.

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Veterinary Medicine (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Animal Behavior & Ethology (AREA)
  • Polymers & Plastics (AREA)
  • Nutrition Science (AREA)
  • Food Science & Technology (AREA)
  • Biomedical Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Molecular Biology (AREA)
  • Plasma Technology (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

L'invention concerne un processeur de plasma RF à pression atmosphérique, caractérisé en ce qu'un plasma est créé entre deux électrodes en utilisant une source RF haute fréquence, et un mélange de gaz avec un gaz moléculaire complexe en tant que principal composant du mélange de gaz.
PCT/US2002/008752 2001-03-28 2002-03-21 Source de plasma rf a pression atmospherique utilisant l'air ambiant et des gaz moleculaires complexes WO2002078749A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002306800A AU2002306800A1 (en) 2001-03-28 2002-03-21 Atmospheric pressure rf plasma source using ambient air and complex molecular gases

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US27960001P 2001-03-28 2001-03-28
US60/279,600 2001-03-28
US9807302A 2002-03-14 2002-03-14
US10/098,073 2002-03-14

Publications (2)

Publication Number Publication Date
WO2002078749A2 true WO2002078749A2 (fr) 2002-10-10
WO2002078749A3 WO2002078749A3 (fr) 2003-04-10

Family

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PCT/US2002/008752 WO2002078749A2 (fr) 2001-03-28 2002-03-21 Source de plasma rf a pression atmospherique utilisant l'air ambiant et des gaz moleculaires complexes

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Country Link
AU (1) AU2002306800A1 (fr)
WO (1) WO2002078749A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10328250A1 (de) * 2003-06-24 2005-01-13 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur Oberflächenbearbeitung
JP2013094468A (ja) * 2011-11-02 2013-05-20 Tokyo Institute Of Technology 大気圧プラズマによる微生物の殺滅装置及び方法
US10194672B2 (en) 2015-10-23 2019-02-05 NanoGuard Technologies, LLC Reactive gas, reactive gas generation system and product treatment using reactive gas
US10925144B2 (en) 2019-06-14 2021-02-16 NanoGuard Technologies, LLC Electrode assembly, dielectric barrier discharge system and use thereof
US11896731B2 (en) 2020-04-03 2024-02-13 NanoGuard Technologies, LLC Methods of disarming viruses using reactive gas

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970907A (en) * 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970907A (en) * 1997-01-27 1999-10-26 Canon Kabushiki Kaisha Plasma processing apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10328250A1 (de) * 2003-06-24 2005-01-13 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur Oberflächenbearbeitung
DE10328250B4 (de) * 2003-06-24 2015-05-13 Jenoptik Optical Systems Gmbh Verfahren zur Oberflächenbearbeitung
JP2013094468A (ja) * 2011-11-02 2013-05-20 Tokyo Institute Of Technology 大気圧プラズマによる微生物の殺滅装置及び方法
US10194672B2 (en) 2015-10-23 2019-02-05 NanoGuard Technologies, LLC Reactive gas, reactive gas generation system and product treatment using reactive gas
US11000045B2 (en) 2015-10-23 2021-05-11 NanoGuard Technologies, LLC Reactive gas, reactive gas generation system and product treatment using reactive gas
US11882844B2 (en) 2015-10-23 2024-01-30 NanoGuard Technologies, LLC Reactive gas, reactive gas generation system and product treatment using reactive gas
US10925144B2 (en) 2019-06-14 2021-02-16 NanoGuard Technologies, LLC Electrode assembly, dielectric barrier discharge system and use thereof
US11896731B2 (en) 2020-04-03 2024-02-13 NanoGuard Technologies, LLC Methods of disarming viruses using reactive gas

Also Published As

Publication number Publication date
WO2002078749A3 (fr) 2003-04-10
AU2002306800A1 (en) 2002-10-15

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