WO2002071816A3 - Systeme ameliore d'implantation ionique a deux chambres - Google Patents

Systeme ameliore d'implantation ionique a deux chambres Download PDF

Info

Publication number
WO2002071816A3
WO2002071816A3 PCT/US2002/007127 US0207127W WO02071816A3 WO 2002071816 A3 WO2002071816 A3 WO 2002071816A3 US 0207127 W US0207127 W US 0207127W WO 02071816 A3 WO02071816 A3 WO 02071816A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
charge exchange
divider structure
improved double
ion implantation
Prior art date
Application number
PCT/US2002/007127
Other languages
English (en)
Other versions
WO2002071816A2 (fr
Inventor
Michael C Vella
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Priority to JP2002570592A priority Critical patent/JP2004523867A/ja
Priority to GB0320262A priority patent/GB2392549B/en
Priority to AU2002252255A priority patent/AU2002252255A1/en
Publication of WO2002071816A2 publication Critical patent/WO2002071816A2/fr
Publication of WO2002071816A3 publication Critical patent/WO2002071816A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne une source d'ions à deux chambres améliorée, comprenant une chambre de génération de plasma et une chambre d'échange de charge séparées par une structure de séparation. La chambre d'échange de charge renferme un matériau de protection contre les perturbations magnétiques servant à réduire l'exposition de composants internes à des lignes de champ magnétique générées de manière externe. Cette source d'ions à deux chambres comporte également un écran thermique et/ou un système de refroidissement permettant de surmonter des effets délétères engendrés par une augmentation de température dans la chambre de génération de plasma. La structure de séparation présente une pluralité d'ouvertures configurées de manière à réduire la surface active sur la structure de séparation dans la chambre d'échange de charge.
PCT/US2002/007127 2001-03-07 2002-03-07 Systeme ameliore d'implantation ionique a deux chambres WO2002071816A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002570592A JP2004523867A (ja) 2001-03-07 2002-03-07 改良型二重室イオン注入システム
GB0320262A GB2392549B (en) 2001-03-07 2002-03-07 Improved double chamber ion implantation system
AU2002252255A AU2002252255A1 (en) 2001-03-07 2002-03-07 Improved double chamber ion implantation system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/800,539 US6545419B2 (en) 2001-03-07 2001-03-07 Double chamber ion implantation system
US09/800,539 2001-03-07

Publications (2)

Publication Number Publication Date
WO2002071816A2 WO2002071816A2 (fr) 2002-09-12
WO2002071816A3 true WO2002071816A3 (fr) 2002-11-14

Family

ID=25178656

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/007127 WO2002071816A2 (fr) 2001-03-07 2002-03-07 Systeme ameliore d'implantation ionique a deux chambres

Country Status (5)

Country Link
US (1) US6545419B2 (fr)
JP (1) JP2004523867A (fr)
AU (1) AU2002252255A1 (fr)
GB (1) GB2392549B (fr)
WO (1) WO2002071816A2 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6670623B2 (en) * 2001-03-07 2003-12-30 Advanced Technology Materials, Inc. Thermal regulation of an ion implantation system
US6716727B2 (en) * 2001-10-26 2004-04-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for plasma doping and ion implantation in an integrated processing system
US6894296B2 (en) * 2002-07-30 2005-05-17 Taiwan Semiconductor Manufacturing Co., Ltd Multi-inlet PFS arc chamber for hi-current implanter
US7141138B2 (en) * 2002-09-13 2006-11-28 Applied Materials, Inc. Gas delivery system for semiconductor processing
KR100481861B1 (ko) * 2002-09-19 2005-04-11 삼성전자주식회사 반도체 소자를 제조하기 위한 이온 주입 장치
GB0316628D0 (en) * 2003-07-16 2003-08-20 Micromass Ltd Mass spectrometer
US7417226B2 (en) 2003-07-16 2008-08-26 Micromass Uk Limited Mass spectrometer
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
US20080073559A1 (en) * 2003-12-12 2008-03-27 Horsky Thomas N Controlling the flow of vapors sublimated from solids
EP1695038B1 (fr) * 2003-12-12 2013-02-13 Semequip, Inc. Regulation du debit de vapeurs sublimees a partir de solides
JP2006032229A (ja) * 2004-07-20 2006-02-02 Nissin Ion Equipment Co Ltd イオン注入装置
US20070137576A1 (en) * 2005-12-19 2007-06-21 Varian Semiconductor Equipment Associates, Inc. Technique for providing an inductively coupled radio frequency plasma flood gun
US7875125B2 (en) * 2007-09-21 2011-01-25 Semequip, Inc. Method for extending equipment uptime in ion implantation
US8138677B2 (en) * 2008-05-01 2012-03-20 Mark Edward Morehouse Radial hall effect ion injector with a split solenoid field
WO2011017314A2 (fr) * 2009-08-03 2011-02-10 General Plasma, Inc. Source d'ions de glissement fermée à champ magnétique symétrique
KR101307111B1 (ko) * 2010-08-24 2013-09-11 닛신 이온기기 가부시기가이샤 플라즈마 발생 장치
JP5425032B2 (ja) * 2010-09-24 2014-02-26 信越化学工業株式会社 多孔質ガラス母材の製造装置及びこれを用いた製造方法
CN102592934B (zh) * 2011-01-11 2015-01-14 中国科学院微电子研究所 用于超浅结注入的离子源装置
US8698108B1 (en) * 2013-03-08 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Ion beam measurement system and method
US9852887B2 (en) * 2013-08-23 2017-12-26 Advanced Ion Beam Technology, Inc. Ion source of an ion implanter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107170A (en) * 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
US6297594B1 (en) * 1999-02-02 2001-10-02 Nissin Electric Co., Ltd Plasma source ion implanting apparatus using the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1585902A (fr) * 1968-04-09 1970-02-06
JPH0654644B2 (ja) * 1985-10-04 1994-07-20 株式会社日立製作所 イオン源
DE3935408A1 (de) * 1989-10-24 1991-04-25 Siemens Ag Metallionenquelle
US5352899A (en) * 1992-08-18 1994-10-04 Ruxam, Inc. Method and apparatus for fabricating a device/circuit pattern by a converging atomic beam
US5447431A (en) 1993-10-29 1995-09-05 Brooks Automation, Inc. Low-gas temperature stabilization system
US5663488A (en) 1995-05-31 1997-09-02 Hewlett-Packard Co. Thermal isolation system in an analytical instrument
JP3749924B2 (ja) 1996-12-03 2006-03-01 富士通株式会社 イオン注入方法および半導体装置の製造方法
JP2897770B1 (ja) * 1998-05-27 1999-05-31 日新電機株式会社 イオン源
US6084240A (en) 1998-06-20 2000-07-04 United Integrated Circuits Corp. Ion implanter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107170A (en) * 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
US6297594B1 (en) * 1999-02-02 2001-10-02 Nissin Electric Co., Ltd Plasma source ion implanting apparatus using the same

Also Published As

Publication number Publication date
US6545419B2 (en) 2003-04-08
US20020125829A1 (en) 2002-09-12
GB2392549B (en) 2005-10-12
AU2002252255A1 (en) 2002-09-19
JP2004523867A (ja) 2004-08-05
GB0320262D0 (en) 2003-10-01
GB2392549A (en) 2004-03-03
WO2002071816A2 (fr) 2002-09-12

Similar Documents

Publication Publication Date Title
WO2002071816A3 (fr) Systeme ameliore d'implantation ionique a deux chambres
TW365018B (en) Tandem process chamber
EP0144572A3 (en) Magnetron-cathodes for the sputtering of ferromagnetic targets
GB2343547B (en) An ion implanter with substrate neutralizer
WO2000068451A3 (fr) Source de vaporisation anionique a magnetron
GB2325939A (en) Thermally conductive chuck for vacuum processor
ATE158384T1 (de) Elektronzyklotronresonanz-ionentriebwerk
EP0844640A3 (fr) Dispositif d'affichage d'image
EP0959487A3 (fr) Source d' ions de type "multicusp"
JPS57113539A (en) High temperature multipole plasma ion beam source
CA2216818A1 (fr) Support de cathode pour source d'ions a cathode chauffee indirectement
RU2008149525A (ru) Электродуговой источник и магнитное приспособление
AU7903198A (en) Power electrical enclosure
WO1998053486A3 (fr) Ecran de deposition en aluminium
DE59400046D1 (de) Magnetronzerstäubungsquelle und deren Verwendung.
HK1096490A1 (en) Electron cyclotron resonance(ecr) plasma source having a linear plasma discharge opening
CA2064255A1 (fr) Appareil de chauffage haute frequence a convertisseur de frequence integre
JPS53102677A (en) Ion beam radiating unit
FR2847074A1 (fr) Generateur de rayons x a dissipation thermique amelioree et procede de realisation du generateur
CA2391911A1 (fr) Appareil de traitement au plasma avec paroi conductrice d'electricite
TW276348B (en) Apparatus for coating a substrate
JPS51119287A (en) Recutangular-shape beam ion source
JPS53142139A (en) Magnetic circuit for magnetic bubble
JPS5316572A (en) Magnetron
WO1999040758A3 (fr) Tele-exposition de pieces a un plasma obtenu par decharge luminescente uniforme sous une atmosphere

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

ENP Entry into the national phase

Ref document number: 0320262

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20020307

Format of ref document f/p: F

121 Ep: the epo has been informed by wipo that ep was designated in this application
AK Designated states

Kind code of ref document: A3

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2002570592

Country of ref document: JP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase