WO2002071490A1 - A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit - Google Patents
A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit Download PDFInfo
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- WO2002071490A1 WO2002071490A1 PCT/US2002/006802 US0206802W WO02071490A1 WO 2002071490 A1 WO2002071490 A1 WO 2002071490A1 US 0206802 W US0206802 W US 0206802W WO 02071490 A1 WO02071490 A1 WO 02071490A1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
- G02B6/2821—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using lateral coupling between contiguous fibres to split or combine optical signals
Definitions
- the gate metal is opened to allow the passage of light either into or out of the active region and the surface P++ planar sheet doping is relied upon to produce a constant potential across the optical opening. Then the current flow from the gate metal contact into the active layer is two dimensional in nature with the contours of the carrier flow determined by the use of a Si implant to steer the carrier flow.
- the optoelectronic devices are resonant vertical cavity devices and the spacing between the modulation doped layers of the n and p type transistors is adjusted to produce an integral number of half wavelengths in the cavity.
- the above embodiment produces optoelectronic devices that emit or detect normal to the surface.
- the DBR mirrors of the vertical cavity perform as the cladding layers for a dielectric waveguide, and the light is entered into the edge of the device by means of a passive waveguide fabricated monohthically with these devices.
- a passive waveguide fabricated monohthically with these devices.
- the light may be continuously converted from vertical cavity to waveguide propagation. This operation is particularly significant for the laser, detector, modulator and amplifier devices.
- FIG. 2c shows the device contact geometry of the p ⁇ np transistor optimized for lower collector resistance.
- the base/source contact is self-aligned to one side of the channel and the collector contact is self-aligned to the other side.
- the base/source access resistance is higher but the collector access resistance is lower.
- FIG. 2g shows the generalized construction of the optoelectronic thyristor structure configured as a vertically emitting or detecting device. Both n channel and p channel contacts are shown for completeness.
- the optical aperture is formed by N type implants which are placed inside of the metal tungsten emitter contact. The current flow into the active layer is guided by the implants as shown.
- the bottom mirror is grown and converted to AlO/GaAs and the top mirror is comprised of deposited layers.
- FIG. 2h shows the optoelectronic thyristor structure formed with only the electron channel contact as the third terminal input. This is the most practical thyristor structure as only a single high impedance input node is required to change state and the electron channel is preferable due to its higher mobility.
- FIG. 2i shows the optoelectronic thyristor structure formed with the electron third terminal input and adapted to the waveguide propagation of signals.
- the light is confined to an optical mode as shown by the cladding formed on the top by the deposited DBR mirror and by the cladding formed on the bottom by the grown DBR mirror.
- the light is converted from a vertically propagating mode to a waveguide propagating mode by the action of a second order diffraction grating formed in the first mirror layer of the top deposited mirror.
- the waveguide device also performs as a thyristor digital receiver, as a waveguide amplifier and as a waveguide digital modulator.
- FIG. 2j shows the optoelectronic thyristor waveguide structure with electron third terminal inputs and adapted to the formation of two parallel waveguide channels.
- the light is coupled from one channel to the other and vice versa by evanescent coupling.
- the coupling takes place through a region of slightly larger bandgap and therefore slightly lower index created through techniques such as vacancy disordering.
- the switching in such a directional coupler device occurs by the injection of charge into one of the two channels.
- FIG. 3 is an optical receiver circuit.
- FIG. 3b shows the top view of the in-plane configuration of the single waveguide device.
- the light propagates in the waveguide formed by the quantum wells as a core region and the dielectric mirrors as the waveguide cladding regions.
- the light enters from a passive waveguide and exits to a passive waveguide.
- These passive waveguides have near zero reflectivity at the transition to the active waveguide.
- the active device may have a grating defined in the first layer of the upper dielectric mirror to enable conversion from a laterally propagating to a vertically propagating mode.
- the second of these is an n- channel HFET which has an n modulation doped quantum well and is positioned with the gate terminal on the top side and the collector terminal on the lower side which is the collector of the p-channel device. Therefore a non-inverted N-channel device is stacked upon an inverted p-channel device to form the active device structure.
- the layer structure begins with layer 153 of heavily N+ doped GaAs of about 2000A thickness to enable the formation of ohmic contacts and this is the gate electrode of the p channel device.
- layer 153 Deposited on layer 153 is layer 154 of N type Al ⁇ lGa ⁇ _ xl As with a typical thickness of 500-3000A and a typical doping of 5xl0 17 cm “3 .
- This layer serves as part of the PHFET gate and optically as the lower waveguide cladding layers for all laser, amplifier and modulator structures.
- the next layer layer layer 155 is Al x2 lGa ⁇ . x2 As of thickness about 380-500A and where x2 is about 15%.
- the first 60-80A (layer 155a) is doped N+ type in the form of delta doping, the next 200-300A (layer 155b) is undoped, the next 8 ⁇ A (layer 155c) is doped P+ type in the form of delta doping and the last 20-30A (layer 155d) is undoped to form a spacer layer.
- This layer forms the lower separate confinement heterostructure (SCH) layer for the laser, amplifier and modulator devices
- the next layers define the quantum well(s) of the PHFET.
- the well barrier combination will typically be repeated three times. Unstrained quantum wells are also possible. Following the last barrier of undoped GaAs is a layer 159 of undoped Al ⁇ 2 lGa ⁇ . ⁇ 2 which forms the collector of the PHFET device and is about 0.5 ⁇ m in thickness. All of the layers grown thus far form the PHFET device with the gate contact on the bottom.
- Layer 164 may have a first thin sublayer 164a of, e.g., 10-20A thickness and having a P+ typical doping of IO 19 cm "3 .
- a second sublayer 164b has a P doping of l-5xl0 17 cm '3 and a typical thickness of 700A.
- Deposited next is layer 165 of GaAs or a combination of GaAs and InGaAs which is about 50- 100A thick and doped to a very high level of P+ type doping (about lxl0 20 cm “3 ) to enable the best possible ohmic contact.
- a dielectric mirror is deposited on this structure during the fabrication process.
- the distance between the mirrors is the thickness of all layers from 153 to 165 inclusive. In designing this structure, this thickness must represent an integral number of 1/4 wavelengths at the designated wavelength, and the thickness of layers 164 and/or 159 is adjusted to enable this condition.
- Device fabrication begins with the deposition of the refractory gate which is followed by an ion implant 170 of N type ions to form self-aligned contacts to the channel consisting of the layers 161 and 160.
- an ion implant 170 of N type ions is performed on the source side of the FET to form self-aligned contacts to the channel consisting of the layers 161 and 160.
- the structure is etched down to near (about 1000 A above) the p type quantum wells 157 and an ion implant 173 of P type ions is performed to contact the p type inversion channel.
- an insulating implant 171 such as oxygen is performed under the N type drain implant to reduce the capacitance for high speed operation.
- RTA rapid thermal anneal
- FIG.2b A second structure is shown in Fig.2b in which the same fabrication steps have been used, but the configuration has been more appropriately optimized as a bipolar device.
- both of the self-aligned implants 170 which contact the channel are connected as base or control electrodes and have the function of controlling the level of charge in the inversion channel.
- the channel charge controls the thermionic current flow between the emitter and collector producing a thermionic bipolar device.
- the device is then etched to the collector mesa which is established about lOOOA above the p type quantum wells 157 and these wells are contacted by a P+ type ion implant, 173. The remainder of the process is the same as in Fig.
- this bipolar is a p ⁇ np device which would be grown with an inversion channel which is normally on.
- the p type bipolar is always inferior to the n type bipolar and therefore the main application for this device is as the p type component in a complementary bipolar technology.
- Fig. 2b It is noted in Fig. 2b, that since both collectors 172a, 172b are outside of the base or source contacts, the collector access resistance is forfeited for the sake of channel or base access resistance.
- the device can be constructed differently as shown in Fig. 2c, by creating the source contact 169a by self-alignment of implant 170 to one side of the emitter contact 168 and the collector contact 172b by self-alignment of implant 173 to the other side of the emitter contact.
- the fabrication sequence therefore requires alignment of the mask within the emitter gate feature 168, which limits how small the feature can be made. In the interests of higher speed, a tradeoff is therefore made. With this construction, the collector resistance has been optimized at the expense of the overall source resistance.
- Figs. 2d-2f the cross-section is shown of the PHFET which is identical in cross- section to the n ⁇ pn bipolar device.
- Fig. 2d shows that the top p+ layer 165 is etched away and a N+ implant 179 is used before the refractory metal 168 is deposited in order to create a N contact to the collector region 159 of either the PHFET or the n ⁇ pn bipolar device.
- the refractory contact 168 as a mask, the semiconductor is etched to within lOOOA of the p quantum wells and then the P+ type implant 173 is performed to create self-aligned contacts to the p inversion channel 157/158.
- Figs. 2a-2f can be formed adjacent each other (e.g., on separate mesas) and interconnected as desired.
- the NHFET structure of Fig. 2a and PHFET structure of Fig. 2d can be interconnected to form complementary FET circuits where the gate terminal 168 of Fig. 2a is coupled to the gate terminal 174a or 174b of Fig. 2d, the drain 169b of Fig. 2a is coupled to the drain 172b of Fig. 2d, the NHFET source 169a of Fig. 2a is coupled to ground, and the PHFET source 172a of Fig.
- Figs. 2g - 2j the fabrication sequences previously described are adapted to the formation of optically emitting, detecting, modulating and amplifying devices. Fig.
- the device is biased to its supply voltage V DD through a load resistor R L ,180.
- the N+ electron source terminal 169 (designated the injector) is biased to the most positive voltage V D D through a current source, 181.
- the thyristor When light is incident on the detector of sufficient intensity to produce photocurrent in excess of the current source drawing on the injector te ⁇ ninal, the thyristor will switch on. When the incident light is reduced, the thyristor will switch off because the current source on the injector drains the channel of charge. Therefore this circuit functions as an optical receiver.
- the injector continuously removes charge (current flows out of the device) and forces the device to remain in the off state. In the off state, all of the optical signal is absorbed and an optical "0" is produced.
- the device may operate either with or without the grating. However, with the use of the grating a shorter length of device is possible.
- the device may perform as an analog modulator if the subcollector of the device is not connected. As an analog modulator, any level of modulated intensity is obtainable by varying the injector input voltage up to the maximum absorption change of the modulator produced by the maximum voltage for FET conduction without bipolar conduction, since switching may not occur with the subcollector disconnected.
- the final mode of operation of the device is as a waveguide amplifier. If the device in Fig. 2i is operated in the switched on state but well below the threshold for lasing, then optical signals input to the device from a passive waveguide at one end may be amplified to a larger optical signal at the output of the device.
- the grating may or may not be used. However, the use of the grating will result in a shorter device. It will also result in the stabilization of the polarization, since the grating supports the TE mode much more strongly than the TM mode.
- the wavelength of the optical mode may need to be adjusted to coincide with the maximum change in the refractive index. This may be accomplished by localized heating of the switch using a dedicated HFET as a heating element.
- the passive waveguides interconnecting all devices are also created by the use of the vacancy disordering technique.
- a ridge is etched and is coated with SiO 2 so that a non-absorbing (and therefore low loss) region is formed.
- the • passive waveguide is later coated with the upper dielectric mirror layers to provide the upper cladding layers for waveguide propagation.
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Abstract
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Priority Applications (6)
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EP02721270A EP1371098A4 (en) | 2001-03-02 | 2002-03-04 | A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
KR1020037011558A KR100912358B1 (en) | 2001-03-02 | 2002-03-04 | A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
US10/469,649 US7012274B2 (en) | 2001-03-02 | 2002-03-04 | Modulation doped thyristor and complementary transistors combination for a monolithic optoelectronic integrated circuit |
JP2002570306A JP2004534380A (en) | 2001-03-02 | 2002-03-04 | Combination of modulation-doped thyristors and complementary transistors for monolithic optoelectronic integrated circuits |
US10/689,019 US7247892B2 (en) | 2000-04-24 | 2003-10-20 | Imaging array utilizing thyristor-based pixel elements |
US11/780,745 US7432539B2 (en) | 2000-04-24 | 2007-07-20 | Imaging method utilizing thyristor-based pixel elements |
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US09/798,316 | 2001-03-02 | ||
US09/798,316 US6479844B2 (en) | 2001-03-02 | 2001-03-02 | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
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US09/556,285 Continuation-In-Part US6870207B2 (en) | 2000-04-24 | 2000-04-24 | III-V charge coupled device suitable for visible, near and far infra-red detection |
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PCT/US2003/013183 Continuation-In-Part WO2003092047A2 (en) | 2000-04-24 | 2003-04-28 | THz DETECTION EMPLOYING MODULATION DOPED QUANTUM WELL DEVICE STRUCTURES |
US10/689,019 Continuation-In-Part US7247892B2 (en) | 2000-04-24 | 2003-10-20 | Imaging array utilizing thyristor-based pixel elements |
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EP (1) | EP1371098A4 (en) |
JP (1) | JP2004534380A (en) |
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Also Published As
Publication number | Publication date |
---|---|
US7012274B2 (en) | 2006-03-14 |
US20020121647A1 (en) | 2002-09-05 |
US6479844B2 (en) | 2002-11-12 |
CN1507660A (en) | 2004-06-23 |
KR100912358B1 (en) | 2009-08-19 |
EP1371098A1 (en) | 2003-12-17 |
KR20030088447A (en) | 2003-11-19 |
CN100530680C (en) | 2009-08-19 |
US20040075090A1 (en) | 2004-04-22 |
JP2004534380A (en) | 2004-11-11 |
EP1371098A4 (en) | 2011-06-29 |
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