WO2002067307A1 - Appareil et procede de polissage de surface - Google Patents

Appareil et procede de polissage de surface Download PDF

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Publication number
WO2002067307A1
WO2002067307A1 PCT/JP2001/006355 JP0106355W WO02067307A1 WO 2002067307 A1 WO2002067307 A1 WO 2002067307A1 JP 0106355 W JP0106355 W JP 0106355W WO 02067307 A1 WO02067307 A1 WO 02067307A1
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WO
WIPO (PCT)
Prior art keywords
polishing
polished
plane
workpiece
slurry liquid
Prior art date
Application number
PCT/JP2001/006355
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English (en)
Japanese (ja)
Inventor
Teruyuki Nakano
Yasuhiro Kozawa
Hitoshi Tambo
Manabu Nakahashi
Original Assignee
Kabushiki Kaisha Ishiihyoki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Ishiihyoki filed Critical Kabushiki Kaisha Ishiihyoki
Publication of WO2002067307A1 publication Critical patent/WO2002067307A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor

Definitions

  • the present invention relates to a planar polishing apparatus, and is particularly suitable for flattening the front or back surface of an intermediate structure or a semiconductor device obtained in a manufacturing process of a semiconductor wafer or a semiconductor device.
  • Planarization of the wafer surface in the device fabrication process solves the serious problem of shrinking the depth of focus with the miniaturization of optical scanning lithography. And it can greatly contribute to further miniaturizing the limits of optical lithography.
  • CMP chemical mechanical polishing
  • CMP Chemical mechanical polishing
  • polishing pad polishing pad
  • a slurry containing abrasive particles and an etchant that causes a chemical reaction on the surface to be polished is supplied to the surface to be polished. Polishing the surface to be polished with a chemical reaction on the surface to be polished by polishing the surface.
  • the polishing abrasive and the etching agent to be contained in the slurry liquid are variously selected in consideration of the material of the surface to be polished and the processing speed of the polishing process.
  • CMP is generally used for (1) the polishing process of the Si02 film, which is an oxide film of silicon as the insulating film, (2) the polishing process of poly-Si, and (3) the polishing process of the metal film. Applied.
  • the polishing process for the SiO2 film is roughly divided into a process for planarizing the interlayer insulating film and a process for flattening the isolation between elements.
  • the planarization process of the interlayer insulating film is performed on the intermediate structure in which the insulating film 73 of Si02 is constructed on the wiring or various elements 72 provided on the first interlayer insulating film 71, This is a step of flattening the insulating film 73 on the surface by CMP (up to the broken line a in the figure).
  • CMP up to the broken line a in the figure.
  • the following second layer, third layer, fourth layer This is a flattening process for sequentially constructing structures.
  • the process of planarizing the interlayer insulating film is the most basic and important process in LSI devices aiming for multilayer wiring.
  • flattening of element isolation is a process for insulating and isolating elements of adjacent devices by a Si02 film.
  • a trench groove 76 is formed in the base Si wafer, and an SiO2 film 77b other than the portion 77a embedded in the trench groove 76 is applied to the intermediate structure in which the SI02 film 77 is deposited thereon. (Up to broken line b in the figure) Removed by CMP.
  • a film 79 for example, a silicon nitride film
  • the erosion of the Si substrate by CMP is prevented. Can be prevented.
  • 2Poly-Si CMP is a process called STI (Shallow Trench Isolation) in which the trench is deepened and the material to be deposited is poly-Si.
  • the poly-Si remains only in the deep trench by CMP. . This is to form a trench capacitor. Since an oxide film is formed on the surface of the Si substrate and the trench, the SiO2 film can be used as a stopper during CMP.
  • CMP for metal film includes Cu as well as Al and W as metal films for wiring.
  • Cu has advantages such as low resistance and high electromigration resistance, and is expected as a next-generation wiring material.
  • CMP has begun to be applied to these interconnect metals because CMP yields better interconnect yields than etching.
  • a groove 83 (contact hole) for connecting the upper wiring and the lower wiring 82 of the insulating film 81 is formed (see FIG. 12 (a)).
  • An intermediate structure (see FIG. 12 (b)) having a metal film 84 serving as a wiring material formed thereon has a portion other than the groove 83.
  • the metal is removed by CMP (see Fig. 12 (c)). This method is called the “damascene method”.
  • the insulating film serves as a stopper.
  • damascene method 1 contact hole opening (Si02 film), 2 metal film formation (Si02 film), 3 metal film CMP, 4 insulating (Si02) film formation, 5 wiring groove opening (SiO2 film), 6
  • metal film deposition and metal film CMP There are approximately seven steps: metal film deposition and metal film CMP.
  • a contact hole is opened, and a wiring groove is opened in the Si02 film in step (2) to perform CMP only once. This is a dual damascene method.
  • a contact hole 93 is opened in an insulating film 92 (Si02 film) on which a wiring or an element 91 is formed. 14 (a)), 2 Intermediate structure (Fig. 14 (b)) on which metal 95 is deposited, (3) CMP of metal film 95 (Fig. 14 (c)).
  • This process can be completed in less than half the number of steps in the dual damascene method.
  • CMP of a metal film it must be performed under conditions such as processing scratches and contamination, including the Si02 film, and no foreign matter remains. There is a possibility that a small amount of metal chips for wiring may enter the inside of the processing scratches. It is critical.
  • the insulating film (Si02) It is extremely important that CMP does not leave foreign matter such as processing scratches such as scratches or slurry on the surface of metal or wiring metal film.
  • Planarization by chemical mechanical polishing (CMP) in the manufacturing process of semiconductor devices has the following problems.
  • the CMP of the wiring metal film is made of high purity, high processing rate (metal film barrier metal), high selectivity with the underlying oxide film, improved surface condition, stability, circulating slurry and its system.
  • Development is an issue.
  • polishing with a strongly alkaline colloidal silica polishing solution has a problem that not only processing distortion due to pre-processing cannot be removed but also polishing distortion remains due to polishing pressure.
  • the above-mentioned “swing” and “dating” may occur, and distortion-free flattening may not be realized.
  • CMP uses a polishing slurry solution: PH10 and strong alkaline solution, so it is difficult to handle and waste liquid treatment of the polishing solution, and the colloidal silica abrasive is dried. Then, there was also a problem that it was fixed and could not be washed.
  • CMP chemical mechanical polishing
  • an object of the present invention is to provide a planar polishing apparatus using a completely new polishing method instead of chemical mechanical polishing (CMP) in precision polishing, such as a semiconductor device, that requires flattening without distortion. Disclosure of the invention
  • planar polishing apparatus wherein: a support means for supporting the workpiece, a polishing tool which moves relative to a flat surface to be polished of the workpiece, and a polishing tool between the flat tool and the polishing tool. And a polishing liquid supply means for supplying a polishing slurry liquid to the polishing surface, and polishing the flat surface in a non-contact state by a flow of the polishing slurry liquid formed between the flat surface and a polishing tool.
  • the surface polishing apparatus is characterized in that a polishing surface and a polishing pad are supplied while supplying a polishing slurry liquid to a minute gap between a surface to be polished of a workpiece formed during polishing and a polishing tool. Is relatively moved, and polishing is carried out by non-contact polishing utilizing the ultra-fine amount rupture phenomenon that occurs when the abrasive grains in the polishing slurry liquid collide with the surface to be polished of the workpiece at high speed and at an acute angle. . According to the polishing technique utilizing this ultra-small amount rupture phenomenon, since mechanical polishing is not accompanied by a dangling effect, it can be mechanically and uniformly polished regardless of the chemical properties of the workpiece.
  • planar polishing apparatus is characterized in that the polishing slurry liquid does not cause a chemical reaction with the flat surface.
  • planar polishing apparatus wherein the workpiece is a semiconductor wafer.
  • planar polishing apparatus wherein the workpiece is a semiconductor device manufacturing process. Characterized in that it is an intermediate structure obtained by
  • intermediate structure refers to an intermediate obtained in a semiconductor device manufacturing process.
  • planar polishing apparatus wherein the workpiece is a semiconductor device.
  • planar polishing method further comprising: providing a relative motion between the plane to be polished of the workpiece and the polishing tool; supplying a polishing slurry liquid between the plane and the polishing tool; The flat surface is polished in a non-contact state by a flow of the polishing slurry liquid formed between the polishing tool and the polishing tool.
  • a planar polishing method according to claim 7 is characterized in that the polishing slurry liquid does not cause a chemical reaction with the flat surface.
  • FIG. 1 is a perspective view of a planar polishing apparatus A according to the present invention.
  • FIG. 2 is a cross-sectional view of the flat-surface polishing apparatus A according to the present invention.
  • FIG. 3 is a perspective view of a plane polishing apparatus B for polishing a semiconductor wafer.
  • FIG. 4 is a perspective view of a plane polishing apparatus C for polishing precision optical components.
  • FIG. 5 is a cross-sectional view of a plane polishing apparatus D according to the present invention.
  • FIG. 6 is a plan view of a plane polishing apparatus D according to the present invention.
  • FIGS. 7 (a) and (b) are views showing another embodiment of the polishing pad of the planar polishing apparatus according to the present invention.
  • FIG. 8 is a perspective view of a plane polishing apparatus E according to the present invention.
  • FIG. 9 is a flowchart showing the procedure of the planar polishing step.
  • FIG. 10 is a sectional view of the intermediate structure showing the CMP in the step of planarizing the interlayer insulating film.
  • FIG. 11 is a cross-sectional view of an intermediate structure showing a CMP in a flattening step of element isolation.
  • FIGS. 12 (a) to 12 (c) are cross-sectional views of the intermediate structure showing processing steps of the damascene method.
  • 13A is a cross-sectional view of the intermediate structure showing thinning
  • FIG. 13B is a cross-sectional view of the intermediate structure showing dicing.
  • FIGS. 14 (a) to 14 (c) are cross-sectional views of the intermediate structure showing a processing procedure of the dual damascene method.
  • planar polishing apparatus employs the above-mentioned non-contact polishing method based on the minute amount rupture phenomenon.
  • the planar polishing apparatus A is for polishing an intermediate structure 2 obtained in a semiconductor device manufacturing process.
  • a polishing slurry Polishing liquid tank 1 filled, turntable 3 on which intermediate structure 2 is placed and rotated in polishing liquid tank 1, and turntable 3 reciprocating in X direction (indicated by arrow X in the figure)
  • a first driving unit 4 to be rotated, a polishing cylinder 5 as a polishing tool rotating on the turntable 3 with respect to the intermediate structure 2, and a polishing cylinder 5 are rotated. (Shown by an arrow Y in FIG. 2).
  • a neutral slurry liquid can be adopted to suppress a chemical reaction.
  • a cannonball having a viscosity of 100 cp to 200 cp and a particle size of 10 ⁇
  • a neutral polishing slurry solution containing synthetic bentonite, glycols, organic acids and organic acid salts in addition to abrasive grains can be used.
  • abrasive grains for example, those using abrasive grains of SiC, A1203, SiO2, and Se02 can be used. More preferably, the polishing slurry liquid has a chemically stable property that does not cause a chemical reaction with the plane of the intermediate structure 2 to be polished.
  • the turntable 3 is provided on a base portion 11 having a built-in turn mechanism.
  • the turntable 3 is provided with a mounting portion 12 at the center of the turntable 3 for holding the peripheral end of the intermediate structure 2 horizontally. This is to rotate or swing the intermediate structure 2 in the circumferential direction.
  • the mounting portion 12 is, for example, a depression formed in accordance with the peripheral shape and thickness of the intermediate structure 2, and has a non-slip surface such as rubber or a chuck mechanism on the peripheral surface thereof.
  • the intermediate structure 2 may be fitted with the polished surface 2a) facing upward.
  • the turn mechanism built in the base 11 is, for example, driven by the power of a motor built in the base 11.
  • the turntable 3 is rotated or rocked more slowly than the rotation speed of the polishing cylinder 5.
  • the turntable 3 is mounted on a guide rail 14 laid at the bottom of the polishing liquid tank 1, and is arranged movably along the guide rail 14.
  • the first drive unit 4 has one end attached to the base 11 of the turntable 3, and a hole provided with a seal provided on a side surface of the polishing liquid tank 1 (not shown), and the other end of the polishing liquid tank.
  • An arm 16 extending outside the polishing liquid tank 1 and a first drive mechanism 17 for reciprocating the arm 16 in a linear direction in the axial direction outside the polishing liquid tank 1 are provided.
  • the first drive mechanism 17 makes the turntable 3 linearly reciprocate slowly by, for example, the power of a built-in motor compared to the rotation speed of the polishing cylinder 5.
  • the polishing cylinder 5 is obtained by winding a polishing pad 23 around an intermediate shaft portion 22 of a rotating shaft 21 horizontally supported in the polishing liquid tank 1.
  • the rotating shaft 21 is rotatably supported at one end by a bearing 24 (see FIG. 2) disposed on the side surface of the polishing liquid tank 1, passes through a bearing 25 having a seal and a bearing on the side surface of the polishing liquid tank 1, and has the other end thereof. 2 Connected to drive unit 6.
  • the polishing pad 23 is a polishing pad made of an elastic material having a required rigidity.
  • a polishing pad made of a resin material such as polyurethane, a porous soft polishing pad material, or the like can be used.
  • the polishing cylinder 5 is installed at a height at which the outer peripheral surface of the polishing pad 23 contacts the intermediate structure 2 mounted on the mounting portion 12 of the turntable 3. This height adjustment is performed, for example, by setting the mounting portion 12 of the turntable 3 as a replaceable member and setting the thickness of the intermediate structure 2 so that the mounted intermediate structure 2 can contact the polishing pad 23 of the polishing cylinder 5.
  • the mounting portion 12 may be exchangeable according to the gap between the polishing cylinder 5 and the polishing pad 23.
  • the height of the polishing cylinder 5 may be adjusted in accordance with the height of the polished surface 2a of the intermediate structure 2 placed on the placing portion 12 of the turntable 3. Further, the height of the polished surface 2a of the intermediate structure 2 placed on the placing portion 12 may be adjusted according to the height of the peripheral surface of the turntable 3.
  • the second drive unit 6 includes a second drive mechanism 26 that linearly reciprocates the rotary shaft 21 in the axial direction outside the polishing liquid tank 1 via a motor, and a motor that rotates the rotary shaft 21. 27 and a third drive mechanism 29 rotated by a belt 28.
  • a second drive mechanism 26 that linearly reciprocates the rotary shaft 21 in the axial direction outside the polishing liquid tank 1 via a motor, and a motor that rotates the rotary shaft 21. 27 and a third drive mechanism 29 rotated by a belt 28.
  • the intermediate structure 2 When the intermediate structure 2 is polished by the plane polishing apparatus A, the intermediate structure 2 is fitted into the mounting portion 12 of the turntable 3 with the surface to be polished facing up, and the polishing pad 23 of the polishing cylinder 5 is interposed between the intermediate portion 2 and the polishing pad 23. With the polishing slurry lightly pressed against the structure 2, the polishing slurry liquid is poured into the polishing liquid tank 1 to a height at which the intermediate structure 2 is sufficiently immersed.
  • the turntable 3 is rotated or rocked in the circumferential direction, the turntable 3 is linearly reciprocated in the X direction along the guide rails 14 by the first drive mechanism 17, and the polishing cylinder is rotated by the second drive mechanism 26.
  • 5 is linearly reciprocated in the axial direction (Y direction), and the polishing cylinder 5 is rotated by the third drive mechanism 29.
  • the rotation or swing of the turntable 3, the linear reciprocation of the turntable 3, and the linear reciprocation of the polishing cylinder 5 in the axial direction are operations for gradually changing the polishing position. It moves at a slower speed than the rotation speed of 5.
  • the polishing slurry liquid is drawn between the polishing pad 23 of the polishing cylinder 5 and the polished surface 2a of the intermediate structure 2.
  • the polishing pad 23 is elastically deformed by receiving the pressure of the polishing slurry liquid drawn in at this time, and a minute gap si is formed between the polishing pad 23 and the polished surface 2a of the intermediate structure 2.
  • the flow path of the drawn-in polishing slurry liquid is narrowed, so that the flow velocity of the polishing slurry liquid is increased, and the abrasive grains contained in the polishing slurry liquid are rapidly and sharply coated on the intermediate structure 2. It collides with the polished surface 2a, and the energy of this collision causes a very small amount of rupture phenomenon on the polished surface 2a of the intermediate structure 2, thereby performing highly accurate polishing.
  • polishing is performed by colliding abrasive grains in the flow of the polishing slurry liquid which is not in contact with the polishing pad 23 and flows on the surface 2a of the intermediate structure 2 to be polished. Therefore, the polished surface 2a of the intermediate structure 2 can be uniformly polished.
  • this surface polishing machine is a mechanical polishing that does not involve a chemical action. Even when a different kind of material is exposed on the surface 2a to be polished as in the intermediate structure 2, it is not affected by the chemical property of the different kind of material. And can be polished uniformly mechanically, Since polishing is performed using the small amount of rupture phenomenon, mirror polishing with very little distortion can be realized. That is, this planar polishing apparatus is suitable for precision polishing such as flattening of an intermediate structure obtained in a manufacturing process of a semiconductor device and a semiconductor device in which different materials are exposed on a processing surface.
  • This planar polishing apparatus is applicable not only to semiconductor devices but also to flattening of the front or back surface of a semiconductor wafer without distortion.
  • the polishing machine B shown in FIG. 3 is different from the polishing machine A in that the mounting portion 12 of the turntable 3 of the polishing device A is replaced with a mounting portion 32 on which a disc-shaped semiconductor wafer 31 can be mounted.
  • the semiconductor wafer 31 is placed on the mounting portion 32 with the surface to be polished (the surface to be polished 31a) facing up, and the semiconductor wafer 31 is polished with the polishing slurry liquid in the same manner as in the polishing of the intermediate structure 2 by the above-mentioned planar polishing apparatus A.
  • Non-contact polishing is performed in a state of being immersed in the steel.
  • the flat polishing machine C shown in FIG. 4 is such that the mounting portion 12 of the turntable 3 of the flat polishing device A is replaced with a mounting portion 42 in which a plurality of square columnar precision optical components 41 can be arranged and fixed.
  • the precision optical components 41 arranged with the predetermined end surface to be polished (the surface to be polished 41a) facing up are fixed to the mounting portion 42 with the fixing jig 43 fixed thereto, and Similar to the polishing of the intermediate structure 2 by A, the non-contact polishing is performed while the precision optical component 41 is immersed in the polishing slurry liquid.
  • this planar polishing apparatus D includes a guide rail 52 laid on the bottom of a polishing liquid tank 51, and a base 53 on a flat plate placed upright on the guide rail 52. And a turntable 54 disposed on both sides of the base 53, a workpiece fixing portion 56 for fixing a workpiece 55 on the surface of the turntable 54, and a workpiece fixing portion 56 on both sides. And a polishing cylinder 57 disposed so as to perform the polishing. As shown in FIG. 6, the outer periphery of the polishing cylinder 57 is obtained by winding a polishing pad 59 around a rotating shaft 58.
  • This flat surface polishing apparatus D is a work piece 55 in which a polishing cylinder 57 is fixed to a work fixing part 56. _
  • the polishing slurry is poured into the polishing liquid tank 51 until the workpiece 55 is completely immersed, and the polishing cylinder 57 is rotated, and it is moved up and down and linearly reciprocally, and the base is set. 53 moves along the guide rail 52 slowly and linearly.
  • the polishing cylinder 57 is rotating, the polishing pad 59 is elastically deformed by receiving the liquid pressure between the polishing cylinder 57 and the workpiece 55, and a minute gap is formed between the polishing pad 59 and the workpiece 55.
  • non-contact polishing is performed with the workpiece 55 immersed in the polishing slurry liquid.
  • planar polishing apparatus according to the present invention has been described above, but the present invention is not limited to the above.
  • the outer surface of a polishing pad wound around a polishing cylinder is made to have irregularities, and the polishing slurry liquid between the polishing cylinder and the surface to be polished generates a dynamic pressure action to more efficiently polish the polishing slurry liquid. And the surface to be polished.
  • the polishing slurry liquid will be confined around the polishing cylinder and the polishing efficiency will be improved.
  • the ten convexes formed on the polishing cylinder may have a projection 61 having a square cross section, or a projection 62 having a trapezoidal or wedge-shaped cross section.
  • reference numeral 60 denotes a polishing cylinder
  • 63 denotes a workpiece
  • 64 denotes a support means for supporting the workpiece.
  • a planar polishing apparatus E shown in FIG. 8 is a belt-shaped polishing pad 68 in which a polishing pad is wound around with tension applied between two pulleys 66 and 67 disposed in a polishing liquid tank 65.
  • the polishing pad 68 is rotated by driving the pulleys 66 and 67 to rotate.
  • the workpiece 69 is placed on a turntable 70 which is linearly reciprocated by being placed on a guide, and it is desirable that the workpiece 69 be rotated or oscillated while loosely reciprocating linearly.
  • the above-mentioned flat surface polishing apparatus includes a first step si for carrying in a workpiece to be polished, and a flat surface to be polished on a surface to be processed on an installation portion of the flat surface polishing apparatus.
  • a second step s2 for setting the workpiece on the upper side a third step s3 for polishing the workpiece by the plane polishing apparatus, and a fourth step for performing a first cleaning of the workpiece polished by the plane polishing apparatus s4, a fifth step s5 for cleaning the workpiece with a brush scrub, a sixth step s6 for drying the workpiece with a spin dryer, and a workpiece after drying.
  • the step of cleaning with a brush scrub is desirably performed in two steps of rough cleaning and finish cleaning.
  • the planar polishing apparatus of the present invention performs non-contact polishing in a polishing slurry solution by non-contact polishing in an extremely small amount, so that mirror polishing with very little distortion can be realized.
  • polishing of predetermined end surfaces of precision optical components it can be applied to flat polishing that requires high-precision flattening without distortion. it can.
  • a flat polishing apparatus includes: a supporting means for supporting a workpiece; a polishing tool which moves relative to a flat surface of the workpiece to be polished; and a polishing slurry between the flat face and the polishing tool.
  • Slurry supply means for supplying a liquid, wherein a polishing pad formed during polishing draws a minute gap between the surface to be polished and the polishing pad to polish in the polishing slurry liquid.
  • the surface to be processed can be polished by non-contact polishing by utilizing an extremely small amount destruction phenomenon caused by colliding abrasive grains with the surface to be polished at high speed and at an acute angle. According to the polishing method utilizing the micro-fine rupture phenomenon, it is possible to mechanically and uniformly polish the workpiece regardless of the chemical properties of the workpiece, and to realize flattening with extremely little distortion. Can be.
  • the flat surface polishing method of the present invention provides relative movement between a flat surface to be polished of a workpiece and a polishing tool, and supplies a polishing slurry liquid between the flat surface and the polishing tool. And polishing the flat surface in a non-contact state by the flow of the polishing slurry liquid formed between the substrate and the substrate. it can.
  • the polishing slurry liquid that does not cause a chemical reaction with the flat surface can be used, it is possible to realize polishing that is completely unaffected by the chemical properties of the flat surface of the workpiece to be polished.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention se rapporte à un nouvel appareil de polissage de surface qui remplace le polissage chimiomécanique (CMP) utilisé dans le polissage de précision d'un dispositif semi-conducteur nécessitant un usinage de planarisation sans contrainte. L'appareil de polissage de surface de cette invention comporte un organe de support d'une pièce à travailler, un outil de polissage composé d'une matière élastique et susceptible de se déplacer relativement à un plan dans lequel se trouve la pièce à polir, et un organe d'alimentation en pâte de polissage situé entre ledit plan et l'outil de polissage. Le plan est soumis à un polissage sans contact utilisant un phénomène de destruction de trace se produisant lorsque les grains abrasifs de la pâte à polir, qui sont entraînés dans un micro-espace formé entre le plan et l'outil de polissage par ledit outil de polissage au cours de l'opération de polissage, entrent en collision avec le plan à grande vitesse et en faisant un angle précis.
PCT/JP2001/006355 2001-02-20 2001-07-23 Appareil et procede de polissage de surface WO2002067307A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001043887A JP2002246340A (ja) 2001-02-20 2001-02-20 平面研磨装置及び平面研磨方法
JP2001-43887 2001-02-20

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WO2002067307A1 true WO2002067307A1 (fr) 2002-08-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113263391A (zh) * 2021-06-01 2021-08-17 中国科学院长春光学精密机械与物理研究所 一种光学元件表面粗糙度加工装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6741491B2 (ja) * 2016-06-29 2020-08-19 川崎重工業株式会社 研磨装置

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JPS6224963A (ja) * 1985-07-19 1987-02-02 Nec Corp 半導体基板の歪除去方法
JPH01140959A (ja) * 1987-11-24 1989-06-02 Sumitomo Electric Ind Ltd 非接触研磨装置の錫定盤
JPH0623663A (ja) * 1991-03-26 1994-02-01 Agency Of Ind Science & Technol 超平滑化非接触研磨方法および装置
JPH07100737A (ja) * 1993-09-30 1995-04-18 Shin Etsu Handotai Co Ltd 半導体ウエーハの研磨方法
JPH1126405A (ja) * 1997-07-01 1999-01-29 Canon Inc 研磨装置
JPH11121410A (ja) * 1997-10-13 1999-04-30 Nikon Corp 半導体デバイス用研磨装置及び半導体デバイスの研磨方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6224963A (ja) * 1985-07-19 1987-02-02 Nec Corp 半導体基板の歪除去方法
JPH01140959A (ja) * 1987-11-24 1989-06-02 Sumitomo Electric Ind Ltd 非接触研磨装置の錫定盤
JPH0623663A (ja) * 1991-03-26 1994-02-01 Agency Of Ind Science & Technol 超平滑化非接触研磨方法および装置
JPH07100737A (ja) * 1993-09-30 1995-04-18 Shin Etsu Handotai Co Ltd 半導体ウエーハの研磨方法
JPH1126405A (ja) * 1997-07-01 1999-01-29 Canon Inc 研磨装置
JPH11121410A (ja) * 1997-10-13 1999-04-30 Nikon Corp 半導体デバイス用研磨装置及び半導体デバイスの研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113263391A (zh) * 2021-06-01 2021-08-17 中国科学院长春光学精密机械与物理研究所 一种光学元件表面粗糙度加工装置

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