WO2002066207A1 - Appareil de polissage et procede de decrassage - Google Patents

Appareil de polissage et procede de decrassage Download PDF

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Publication number
WO2002066207A1
WO2002066207A1 PCT/JP2002/001456 JP0201456W WO02066207A1 WO 2002066207 A1 WO2002066207 A1 WO 2002066207A1 JP 0201456 W JP0201456 W JP 0201456W WO 02066207 A1 WO02066207 A1 WO 02066207A1
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WO
WIPO (PCT)
Prior art keywords
fixed abrasive
dressing
polishing
resin
substrate
Prior art date
Application number
PCT/JP2002/001456
Other languages
English (en)
Inventor
Kazuto Hirokawa
Akira Kodera
Hirokuni Hiyama
Original Assignee
Ebara Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corporation filed Critical Ebara Corporation
Priority to EP02700615A priority Critical patent/EP1361933A1/fr
Publication of WO2002066207A1 publication Critical patent/WO2002066207A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/001—Devices or means for dressing or conditioning abrasive surfaces involving the use of electric current
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools

Definitions

  • the present invention relates to an apparatus for polishing a substrate, such as a semiconductor wafer, with fixed abrasive for polishing, and particularly to a dressing method for dressing (regeneration) of the fixed abrasive.
  • CMP chemical mechanical polishing
  • both the top-ring and the turn-table are rotated while supplying a polishing liquid (slurry) to the sliding surfaces of both the substrate and the polishing cloth, whereby the surface of the substrate is flattened and polished to provide a mirror-finish surface.
  • a polishing liquid slurry
  • the so-called “self-stop function” appears wherein, as soon as polishing of the convex portion is completed to provide a flat surface, the polishing rate is remarkably lowered and, consequently, the polishing does not practically proceed. Further, in the polishing with fixed abrasive, since a polishing liquid (slurry) containing a large amount of abrasive particles is not used, the load applied to environment can be advantageously reduced.
  • the surface of the fixed abrasive is regenerated (dressed) by means of a dresser with diamond particles or the like fixed thereto to self-generate free abrasive particles from the fixed abrasive.
  • the polishing rate immediately after the start of dressing is high.
  • the polishing rate is gradually lowered, and, thus, stable polishing rate cannot be realized.
  • dressing should be carried out each time before polishing to satisfactorily self-generate free abrasive particles.
  • the present invention has been made under these circumstances, and it is an object of the present invention to provide an apparatus for polishing a substrate with fixed abrasive, which does not involve the problem of the separation and falling of diamond particles onto a polishing surface.
  • the apparatus and method for dressing enables free abrasive particles to be stably supplied to the polishing surface of the fixed abrasive, and thus can realize polishing at a stable polishing rate.
  • a method for dressing fixed abrasive for a substrate polishing process which polishes a substrate while pressing the substrate into sliding contact with the fixed abrasive.
  • the method for dressing comprises: irradiating light for dressing onto a surface of the fixed abrasive; and supplying a chemical agent or a chemical liquid onto the surface of the fixed abrasive to promote or maintain dressing effect attained by the light irradiation before or during dressing.
  • the bond of the binder in the fixed abrasive is cleaved, and abrasive particles cannot be held in the fixed abrasive, resulting in the self-generation of abrasive particles. Since, however, portions cleaved by a photochemical reaction are likely to be re-bonded to each other, the abrasive particles are re-bonded to the binder, leading to a problem that the amount of the abrasive particles self-generated is unstable.
  • light is applied while supplying a certain chemical agent or chemical liquid to the fixed abrasive. In this case, re-bonding of cleaved binder portion can be prevented, and, in the dressing by light irradiation, the amount of the abrasive particles self-generated can be stabilized or increased.
  • the chemical agent or the chemical liquid to be supplied preferably contains boron, particularly preferably a borate.
  • This constitution in combination with the light irradiation can realize the self-generation of a satisfactory amount of abrasive particles and thus can realize stable dressing.
  • the fixed abrasive comprises abrasive particles and a resin, and the resin is preferably an epoxy resin or an MBS resin.
  • the use of an MBS resin enables polishing utilizing properties of the MBS resin, which is soft from a microscopic viewpoint and is hard from a macroscopic viewpoint, to be stably performed based on the self- generation of a satisfactory amount of abrasive particles by the above dressing.
  • an apparatus for polishing a substrate while pressing the substrate into sliding contact with the fixed abrasive comprises: a light source for dressing the fixed abrasive by light irradiation; and a device for supplying a chemical agent or a chemical liquid for promoting the self-generation of abrasive particles in the dressing by the light irradiation.
  • the chemical agent or the chemical liquid to be supplied preferably contains boron, particularly preferably a borate.
  • Fig. 1 is a diagram showing an apparatus for polishing a substrate according to an embodiment of the present invention wherein the apparatus is provided with fixed abrasive;
  • Fig. 2 is a diagram showing a variant of the embodiment of the polishing apparatus shown in Fig. 1, wherein a laser source is used as a light source;
  • Fig. 3 is a diagram showing a polishing apparatus provided with a device for removing polishing refuse after dressing
  • Fig. 4 is a plan view showing the whole construction of a polishing apparatus provided with a photo-dresser
  • Fig. 5 is a perspective view showing an embodiment of the construction of the photo-dresser.
  • Fig. 6 is an elevational view showing an embodiment of the construction of the polishing apparatus.
  • Fig. 1 shows a polishing apparatus according to a first preferred embodiment of the present invention.
  • fixed abrasive 13 Si0 2 , Al 2 0 3 , Ce0 2 and the like may be used as abrasive particles, and resin materials, such as epoxy resins, phenolic resins, and polyimide resins, may be used as a binder. Since the above binder is an organic material, upon the application of light onto the polishing surface of the fixed abrasive, energy of the applied light cleaves the molecular bond and, consequently, abrasive particles are self-generated.
  • photo-reactive fixed abrasive with Ti0 2 , ZnO or the like as a photo- catalytic material mixed therein can further promote the self-generation of abrasive particles by lower-energy light.
  • Both abrasive particles separated from the fixed abrasive and abrasive particles, which are in the state of being fixed onto the fixed abrasive but are exposed onto the surface of the fixed abrasive, are considered to participate in polishing.
  • Dressing promotes the self- generation of abrasive particles having such both states thereof.
  • the polishing apparatus using the fixed abrasive 13 is provided with a light source 31, such as a mercury lamp or a low-pressure mercury lamp, and, as described above, the application of light from this light source 31 cleaves the bond of the binder material in the fixed abrasive to self-generate free abrasive particles .
  • This polishing apparatus is provided with a chemical agent or a chemical liquid supply device 41.
  • the supply of a suitable chemical liquid when combined with light irradiation, can promote the self-generation of free abrasive particles and thus can promote or maintain dressing.
  • the chemical agent or the chemical liquid to be supplied is preferably a boron-containing compound such as a borate.
  • the construction, wherein a top-ring 21 is provided for holding a substrate W to be polished and the substrate W to be polished is pressed against and, at the same time, is brought to sliding contact with the polishing surface of the fixed abrasive 13 to perform polishing, is the same as that of the above-described conventional polishing apparatus.
  • the so-called "in-situ dressing" can be carried out wherein a semiconductor wafer W or the like is polished with the fixed abrasive 13 provided on the turntable 11 being rotated while light is applied from the light source 31 onto the fixed abrasive 13 to perform dressing.
  • Fig. 2 is a diagram showing a variant of the first embodiment shown in Fig. 1.
  • a laser source 33 is used as the light source, and a laser beam is applied to the fixed abrasive 13.
  • the laser source 33 has a large number of laser beam emission ports which serve to apply the laser beams evenly to irradiation portion of the fixed abrasive 13.
  • the laser source 33 is movable in a direction indicated by an arrow in the drawing. This can avoid local concentration of the laser beam, can apply a strong laser beam to give high energy density to the surface of the fixed abrasive 13, and can efficiently attain the effect of self-generating free abrasive particles that is dressing effect.
  • a chemical agent or chemical liquid supply device 41 when a chemical agent or chemical liquid supply device 41 is provided and a boron-containing compound, such as a borate, is supplied by the device, the supply of the chemical agent or the chemical liquid in combination with light irradiation can realize good dressing.
  • a boron-containing compound such as a borate
  • the resin material when a resin material is used as the binder, the resin material is a compound having C-H or C-C bond.
  • the end group (-H) or C-C bond on this surface is cleaved and a desired functional group is bonded to this spare bonding arm, abrasive particles are released on the surface of the fixed abrasive, that is, the self- generation of free abrasive particles can be promoted.
  • dressing can be realized. That is, the same effect as in the case of dressing, for example, with a diamond tool can be attained.
  • the bond energy of C-H and the bond energy of C-C in the resin are 98 kcal/mol and 80.6 kcal/mol, respectively. Therefore, when light having a higher photon energy than this energy is applied and, in addition, the light is absorbed in the exposed material to give a higher energy than the above bond energy, the molecular bond can be cleaved.
  • Light sources satisfying this requirement include KrF excimer laser beams of wavelength 248 nm and photon energy 114 kcal, ArF excimer laser beams of wavelength 193 nm and photon energy 147 kcal, and Xe excimer lamp beams of wavelength 172 nm and photon energy 162 kcal. These light sources have a narrow wavelength distribution and can apply high-energy light, but on the other hand, the cost is disadvantageously high. For this reason, a low-pressure mercury lamp may be used wherein lights with 253.7 nm and 184.9 nm, which are resonance lines of mercury, are strongly emitted although the wavelength distribution is broad. This can provide a low-cost light source for photo- dressing.
  • the bond energy of the C-H bond in the resin molecule is 80.6 kcal/mol.
  • the binder In the dressing using photon energy, since the bond of the binder resin in the fixed abrasive is cleaved by a photochemical reaction, the binder no longer holds fixed abrasive particles and, thus, abrasive particles are self- generated. In this case, however, when the bonding arm of the binder resin cleaved by the photochemical reaction as such is maintained, the bonding arm is re-bonded to the abrasive particles and, consequently, the abrasive particles are again fixed onto the binder.
  • cerium oxide particles were used as the abrasive particles, an epoxy resin was used as the binder, and a low-pressure mercury lamp was used as the light source.
  • the polishing surface of the fixed abrasive was first dressed with a diamond dresser. The first semiconductor wafer was then polished for 10 min, and, without interruption, that is, without dressing of the polishing surface, the second semiconductor wafer was then polished for 10 min. Thereafter, in one case, after the application of ultraviolet light for 30 min while supplying the chemical liquid to the polishing surface of the fixed abrasive, and, in another case, after standing for 30 min without the application of ultraviolet light, the third semiconductor wafer was polished.
  • test Nos. 1 and 2 pure water alone was used as the chemical liquid to be supplied.
  • Test Nos. 1 and 2 are different from each other in that light irradiation was carried out in test No. 1 while light irradiation was not carried out in test No. 2.
  • the results show that, in polishing immediately after dressing with the diamond tool, the polishing rate was 26 to 27 angstrom/min for each test and, in subsequent polishing of the second semiconductor wafer, the polishing rate was significantly lowered to 3 to 5 angstrom/min for each test, and, in particular, in polishing of the second semiconductor wafer, the amount of free abrasive particles self-generated was very small.
  • polishing rate was somewhat increased to 12 angstrom/min. This polishing rate, however, is a very low value. In the polishing of the third semiconductor wafer, when polishing was carried out without light irradiation, the polishing rate was about 3 angstrom/min and the effect of increasing the amount of the self-generated abrasive particles by the dressing could not be attained at all.
  • test Nos. 3 and 4 before polishing of the third semiconductor wafer, light irradiation was carried out while supplying the alkaline solution (test No. 3), or light irradiation was not carried out while supplying the alkaline solution (test No. 4).
  • the wafer polishing rates in the polishing of the first and second semiconductor wafers were the same as described above.
  • test Nos. 5 and 6 a borate pH standard solution was used as the chemical liquid to be supplied. Also in this case, light irradiation was carried out while supplying the borate pH standard solution (test No. 5), or light irradiation was not carried out while supplying the borate pH standard solution (test No. 6).
  • the results of polishing of the first and second semiconductor wafers are the same as described above.
  • a high polishing rate of 94 angstrom/min was provided.
  • the MBS resin is a copolymer produced using methyl methacrylate, butadiene, and styrene as main starting materials. This copolymer is mainly used as a modifier for improving the impact resistance of vinyl chloride resin or acrylic resin.
  • the amount of the MBS resin added is approximately several % to 20%. This is a design in which importance is attached to the properties of vinyl chloride.
  • the proportion of the MBS resin in the resin is increased to not less than 20%, to not less than 50%, or to 100%, a tool having high impact absorption effect is provided.
  • resins with elastomers EPR, butadiene rubber, ethylene-propylene rubber or the like
  • core-shell-type resins using an elastomer as the core have the same effect as described above.
  • PP block polymer impact copolymer
  • PMMA impact copolymer
  • TPE polymethyl methacrylate
  • HIPS high-styrene
  • ABS polymethyl methacrylate
  • AES AES-styrene
  • SBS SEBS
  • SEPS EVA
  • CPE CPE
  • MBS PET
  • PBT PET
  • TPU PET, PBT, and TPU either as such or as additives
  • a polishing tool with fixed abrasive can be provided which scratch is much less likely to occur at the time of polishing.
  • a mixture of an epoxy resin with an MBS resin may be used as the binder.
  • the MBS resin used is a thermoplastic resin, the mold-ability is good and, in addition, the strength of the molded product is high.
  • the self-generation of abrasive particles can be provided and thus can realize high polishing rate.
  • the polishing rate is about twice higher than that of the conventional polishing tool with fixed abrasive using an epoxy resin as the binder.
  • the resin per se has impact resistance, the force applied to the abrasive particles at the time of polishing is relaxed (suppressed).
  • scratch-free that is, substantially defect-free polishing can be realized. It is considered that, in MBS resin-bonded fixed abrasive, the structure is widened by water absorption effect and the capability of holding the abrasive particles is lowered to make it easy to self- generate abrasive particles.
  • this polishing tool with fixed abrasive is advantageous over the conventional polishing tool with phenolic or epoxy resin-bonded fixed abrasive in that the polishing rate is high and scratch is less likely to occur. That is, this polishing tool with fixed abrasive can also be applied to a semiconductor production process in which the occurrence of scratches is unfavorable. Further, in a process which requires a high polishing rate such that the conventional polishing tool with phenolic or epoxy resin-bonded fixed abrasive requires dressing during polishing, a necessary high polishing rate can be provided without dressing during polishing. Furthermore, since there is no fear of causing the separation of diamond abrasive particles during dressing, scratching by diamond particles does not occur.
  • Table 2 shows the results of an experiment on dressing of fixed abrasive using an MBS resin as the binder.
  • the other experimental conditions are the same as described above. Specifically, cerium oxide particles were used as the abrasive particles, an MBS resin was used as the binder, and a low-pressure mercury lamp was used as the light source.
  • polishing conditions for the first semiconductor wafer, polishing was carried out after dressing by a diamond tool; and for the second semiconductor wafer, polishing was carried out subsequent to the polishing of the first semiconductor wafer. After the polishing of the second semiconductor wafer, dressing was then carried out while supplying a chemical liquid in combination with light irradiation in one case and without light irradiation in another case, and the third semiconductor wafer was then polished.
  • Table 2 shows the results of an experiment on dressing of fixed abrasive using an MBS resin as the binder.
  • the other experimental conditions are the same as described above. Specifically, cerium oxide particles were used as the abrasive particles, an MBS
  • Oxidizing agents usable herein include: aqueous ozone; aqueous hydrogen peroxide; organic peroxides, such as peracetic acid, perbenzoic acid, and tert-butyl hydroperoxide; permanganic acid compounds, such as potassium permanganate; bichromic acid compounds, such as potassium bichromate; halogenic acid compounds, such as potassium iodate; nitric acid compounds, such as nitric acid and iron nitrate; perhalogenic acid compounds, such as perchloric acid; transition metal salts, such as potassium ferricyanide; persulfates, such as ammonium persulfate; and heteropoly-acid salts.
  • aqueous hydrogen peroxide and organic peroxides which are free from any metal element and
  • the above peroxides are unstable and thus generate radicals, and unpaired electrons thereof easily oxidize the binder resin.
  • the aqueous hydrogen peroxide is decomposed upon exposure to ultraviolet light to generate hydroxy radicals.
  • the bond dissociation energy of H-OH in this hydroxy radical is about 120 kcal/mol, which is larger than the bond dissociation energy of R-H in all the resins. Therefore, R-H in the binder resin is converted to R radicals by hydroxy radicals.
  • the generated R radicals further react, for example, with hydroxy radicals to cause oxidative decomposition.
  • the concentration of hydrogen peroxide is 0.001 to 60% by weight
  • the pH value is 1 to 14, more preferably 8 to 10
  • the wavelength of the ultraviolet light is not more than 450 nm.
  • oxidizing agents having an oxidative decomposition activity oxidize and deteriorate the polymeric resin as the binder, cause cleavage of the main chain, decomposition, and a reduction in molecular weight to mechanically weaken the surface layer of the fixed abrasive, and remove the surface layer to promote the self-generation of abrasive particles .
  • the application of the above light in dressing using the oxidizing agent having an oxidative decomposition activity can provide synergistic effect in photo-dressing for promoting the self-generation of abrasive particles from the fixed abrasive. Further, even when light is not applied, the supply of an oxidizing agent having an oxidative decomposition activity onto the surface of the fixed abrasive can promote dressing of the surface layer of the fixed abrasive by the above function.
  • a photo-initiator a photo-sensitizer
  • a photo-initiator a photo-sensitizer
  • a chemical agent or a chemical liquid supplied to the fixed abrasive during dressing is also useful for the photo-dressing.
  • the photo-initiator upon the application of light, such as ultraviolet light, onto the surface of the fixed abrasive, absorbs ultraviolet light and generates radicals or ions by cleavage or hydrogen abstraction, and the surface layer of the binder resin constituting the fixed abrasive is decomposed to promote the self-generation of abrasive particles.
  • Photo-initiators include acetophenone, diacetyl, 2,2'-azobisisobutyronitrile, anthraquinone, iron chloride, 1, l-diphenyl-2- picrylhydrazine (DPPH), iron dimethylcarbamate, thioxanthone, tetramethylthiuram sulfide, 1 4- naphthoquinone, p-nitroaniline, phenanthrene, benzil, 1,2- benzoanthraquinone, p-benzoquinone, benzophenone, Michler's ketone, 2-methylanthraquinone, and 2-methyl-1,4- naphthoquinone (vitamin K3).
  • the concentration of the photo-initiator (photo-sensitizer) in the fixed abrasive is preferably about 0.05 to 10%, more preferably about 0.1 to 5%.
  • An example of effective excitation wavelength of ultraviolet light compatible with the photo-initiator (photo-sensitizer) is about 257 nm for thioxanthone and is 251 nm for 1,4-naphthoquinone.
  • a part or the whole of the resin constituting the binder of the fixed abrasive is accounted for by a photo-sensitive resin, and a solution, which can dissolve the resin after exposure, is supplied as the chemical agent or the chemical liquid to be supplied during dressing.
  • the photo-sensitive resin particularly a positive-working photo-sensitive resin which, upon exposure to light, causes a reaction to change properties, when the photosensitive resin is subjected to denaturation or decomposition/depolymerization in its portion exposed to light during dressing, the resin becomes more dissolvable in a solution, which can dissolve the resin after exposure, such as an organic solvent, an aqueous alkaline solution, or pure water.
  • a positive-working photo-sensitive resin and abrasive particles and, if necessary, other binder resin are mixed together to form fixed abrasive
  • the application of light, such as ultraviolet light, and, further, bringing a solution capable of dissolving the resin after exposure into contact with the surface of the fixed abrasive can realize the dissolution of the positive-working photo-sensitive resin together with other binder resin to promote the self-generation of abrasive particles.
  • the organic solvent used as a solution which can dissolve the resin after exposure, is selected according to dissolution properties of the photo-sensitive resin after exposure. When an aqueous alkaline or acidic solution is used, the dissolution can be promoted by a neutralization reaction between the acid and the alkali.
  • the positive-working photo-sensitive resin is, for example, photo-disintegrative PMMA (polymethyl methacrylate) or PMIPK (polymethyl isopropenyl ketone)
  • a reduction in molecular weight occurs upon exposure to light.
  • a mixed liquid composed of organic solvents for example, methyl isobutyl ketone and isopropyl alcohol can dissolve the resin subjected to molecular weight reduction.
  • dissolution inhibition-type novolak resin and o-diazonaphthoquinone compound upon exposure to light, indenecarboxylic acid occurs and is dissolved in the alkaline solution.
  • the resin usable as the positive- working photo-sensitive resin is preferably (CH 2 -CRlR2) n - wherein Rl represents CH 3 and R2 represents H, -CH 3 , -C00H, -COOCH 3 , -COOC 2 H 5 , -COOC 3 H 7 , -COOC 4 H 9 , -COOC 5 H n , COOCH 2 CF 2 CHF-CF 3 , -C 6 H 5 , -CONH 2 , CN, -COCH 3 , or a copolymer thereof.
  • a photo-sensitive resin When a photo-sensitive resin is incorporated into the fixed abrasive to promote photo-dressing, preferably, if possible, for example, antioxidants, ultraviolet absorbers, photo-stabilizers, radical inhibitors, metal inactivators, and peroxide decomposers contained in resins as conventional binders are not added.
  • the surface layer of the fixed abrasive is shaved by dressing, and the resultant refuse stays on the surface of the fixed abrasive.
  • a method is preferably adopted wherein a liquid is ejected onto the fixed abrasive to remove the refuse by the liquid pressure or a gas is blown against the fixed abrasive to remove the refuse by the gas pressure.
  • polishing refuse of the fixed abrasive may be removed by an atomizer 32 which ejects, for example, nitrogen gas and pure water in the form of mist. Polishing refuse of the fixed abrasive produced by dressing may be swept out, for example, with a nylon brush.
  • Fig. 4 is an embodiment showing the construction of a polishing apparatus equipped with a dresser using light irradiation and supply of a chemical liquid according to the present invention.
  • first and second polishing units 51a, 51b are disposed as left and right polishing units so as to face each other on one end side of a space on a floor of which the whole shape is rectangular.
  • a pair of load and unload units for mounting thereon semiconductor wafer housing cassettes 52a, 52b are disposed on the other end side.
  • Two transfer robots 54a, 54b are disposed on a transfer line connecting the polishing units to the load and unload units.
  • Reversing devices 55, 56 are disposed on both respective sides of the transfer line, that is, the reversing device 55 is disposed on one side of the transfer line while the reversing device 56 is disposed on the other side of the transfer line.
  • Two cleaning devices are disposed on each side of the transfer line. That is, cleaning devices 57a, 58a are disposed on both respective sides of the reversing device 55, and cleaning devices 57b, 58b are disposed on both respective sides of the reversing device 56.
  • a push 66 for temporarily mounting thereon a substrate to be polished is disposed near the transfer robot 54b.
  • the first and second polishing units 51a, 51b each comprise: a turn-table 24 having a polishing tool (fixed abrasive) mounted on its upper surface; a top-ring mechanism 60 which holds, by vacuum sticking, a semiconductor wafer as an object to be polished and presses the semiconductor wafer against the surface of the turn-table; a dresser mechanism 61, such as a conventional diamond dresser, for dressing fixed abrasive; and a dresser mechanism 62 using the above light irradiation and the supply of a chemical liquid.
  • the two polishing units, equipped with the turn-table, the top-ring mechanism, and the dresser mechanism, basically having the same specifications are disposed symmetrically with respect to the transfer line.
  • FIG. 5 shows an embodiment of the whole construction of a photo-dressing mechanism.
  • a photo-dresser unit 75 equipped with a light source lamp 63, a chemical liquid supply nozzle 67 and the like is connected to and fixed to a drive arm 77 through a vertically movable cylinder 76.
  • the photo-dresser unit 75 is vertically moved by the vertically movable cylinder 76 to regulate the spacing between the light source lamp 63 and the polishing surface of the fixed abrasive to be dressed.
  • the drive arm 77 is moved within a horizontal plane to position the polishing surface of the fixed abrasive to be dressed.
  • Fig. 6 shows an -embodiment of the construction of the polishing unit.
  • the turn-table 11 is provided with a polishing tool (fixed abrasive) 13.
  • a wafer, to be polished, held by the top-ring 21 is pressed against the surface of the fixed abrasive by the top-ring mechanism 60 and, in this state, is rotated and brought into sliding contact with the fixed abrasive, whereby polishing proceeds.
  • the polishing unit comprises a dressing mechanism 61, which is provided with a conventional diamond dresser 19 and utilizes mechanical contact, and a dressing mechanism 62 equipped with a light source 63, such as a mercury lamp, and a chemical liquid supply nozzle 67, for dressing the polishing surface of the fixed abrasive.
  • dressing is usually carried out by the dressing mechanism using light irradiation before or during polishing of the wafer.
  • the conventional dressing mechanism 61 is used for removing large concaves and convexes formed on the fixed abrasive surface to flatten the whole polishing surface.
  • this conventional dressing is carried out according to need after polishing of a plurality of wafers.
  • a method may be adopted wherein the surface of the fixed abrasive is monitored with a fixed abrasive surface measuring device and, for example, when the level of concaves and convexes has reached not less than 1 ⁇ m, dressing utilizing the mechanical contact is carried out.
  • a combination of light irradiation with the supply of a chemical liquid can realize efficient and stable dressing without causing scratching or other unfavorable phenomena.
  • the present invention can be used in both in-situ polishing process (dressing while polishing is conducted) and ex-situ polishing process (dressing while polishing is not conducted) .
  • the present invention is applicable to an apparatus for polishing a substrate, such as a semiconductor wafer, with fixed abrasive for polishing.
  • the present invention is applicable for manufacturing semiconductor devices, liquid crystal devices, and so on.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L"invention concerne un appareil pour polir un substrat tout en comprimant ce dernier pour l"amener en contact par glissement avec l"abrasif fixe. Cet appareil comprend une source de lumière (32) pour décrasser l"abrasif fixe par irradiation de lumière et un dispositif (41) pour fournir un agent chimique ou un liquide chimique pour favoriser la régénération automatique des particules abrasives lors du décrassage par irradiation de lumière. L"apport d"un agent chimique ou d"un liquide chimique sur la surface de l"abrasif fixe peut favoriser ou maintenir l"effet de décrassage obtenu par l"irradiation de lumière. L"agent ou le liquide chimique à apporter contient de préférence du bore, en particulier, de préférence un borate.
PCT/JP2002/001456 2001-02-20 2002-02-20 Appareil de polissage et procede de decrassage WO2002066207A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP02700615A EP1361933A1 (fr) 2001-02-20 2002-02-20 Appareil de polissage et procede de decrassage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001043777 2001-02-20
JP2001-43777 2001-02-20

Publications (1)

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WO2002066207A1 true WO2002066207A1 (fr) 2002-08-29

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US (1) US20030100246A1 (fr)
EP (1) EP1361933A1 (fr)
KR (1) KR20030022105A (fr)
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WO2003071592A1 (fr) * 2002-02-20 2003-08-28 Ebara Corporation Procede et dispositif de polissage
US7086939B2 (en) 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US8349581B2 (en) 2003-10-22 2013-01-08 The Cleveland Clinic Foundation Assessing the risk of a major adverse cardiac event in patients with chest pain
US20210391208A1 (en) * 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry composition, method for chemical mechanical polishing and method for forming connecting structure

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JP6340205B2 (ja) * 2014-02-20 2018-06-06 株式会社荏原製作所 研磨パッドのコンディショニング方法及び装置

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Cited By (7)

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Publication number Priority date Publication date Assignee Title
WO2003071592A1 (fr) * 2002-02-20 2003-08-28 Ebara Corporation Procede et dispositif de polissage
US7108579B2 (en) 2002-02-20 2006-09-19 Ebara Corporation Method and device for polishing
US8349581B2 (en) 2003-10-22 2013-01-08 The Cleveland Clinic Foundation Assessing the risk of a major adverse cardiac event in patients with chest pain
US7086939B2 (en) 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20210391208A1 (en) * 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry composition, method for chemical mechanical polishing and method for forming connecting structure
US11658065B2 (en) * 2020-06-15 2023-05-23 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry composition, method for chemical mechanical polishing and method for forming connecting structure

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