WO2002064497A1 - Gyroscope and fabrication method thereof - Google Patents

Gyroscope and fabrication method thereof Download PDF

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Publication number
WO2002064497A1
WO2002064497A1 PCT/KR2002/000135 KR0200135W WO02064497A1 WO 2002064497 A1 WO2002064497 A1 WO 2002064497A1 KR 0200135 W KR0200135 W KR 0200135W WO 02064497 A1 WO02064497 A1 WO 02064497A1
Authority
WO
WIPO (PCT)
Prior art keywords
gyroscope
electrode
sensing
driving
displacement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2002/000135
Other languages
English (en)
French (fr)
Inventor
Yong-Kweon Kim
Seong-Hyok Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intellimicrons Co Ltd
Original Assignee
Intellimicrons Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intellimicrons Co Ltd filed Critical Intellimicrons Co Ltd
Priority to US10/257,532 priority Critical patent/US6845668B2/en
Priority to DE60229919T priority patent/DE60229919D1/de
Priority to EP02711501A priority patent/EP1360144B1/en
Priority to JP2002564435A priority patent/JP3713019B2/ja
Publication of WO2002064497A1 publication Critical patent/WO2002064497A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/02Rotary gyroscopes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067Mechanical properties
    • B81B3/0078Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0062Devices moving in two or more dimensions, i.e. having special features which allow movement in more than one dimension
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5719Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
    • G01C19/5733Structural details or topology
    • G01C19/5755Structural details or topology the devices having a single sensing mass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0228Inertial sensors
    • B81B2201/0242Gyroscopes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/01Suspended structures, i.e. structures allowing a movement
    • B81B2203/0136Comb structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/04Electrodes

Definitions

  • the present invention relates to a micromachined gyroscope and a
  • Micro inertial sensors are one application among various aspects
  • inertial sensors made of silicon are inexpensive, mass-producible, and can
  • micromachined gyroscopes have not been commercialized yet. For their
  • the element can operate at a low Q value, and thereby two
  • a gyroscope comprises: a
  • driving fixed electrode being fixed; a driving displacement electrode being fixed
  • sensing displacement electrode being connected to the inertial mass
  • the driving displacement electrode is supported by a folded spring
  • the driving displacement electrode and the inertial mass can be any driving displacement electrode and the inertial mass.
  • inertial mass can be movable in the first direction and are connected by a folded spring having no fixture shaft.
  • Two sensing displacement electrodes are provided on two sides of
  • the gyroscope further comprises an edge gimbal for connecting the two sensing displacement electrodes.
  • a cavity is provided in the center of the inertial mass, and the gyroscope further comprises a displacement limit shaft provided to the
  • the gyroscope further comprises tuning electrodes, each
  • a gyroscope comprises: (a) performing anodic bonding on a silicon
  • gyroscope structure to connect it to an external circuit.
  • the method further comprises dicing the silicon substrate and the
  • the metallic layer formed in (c) is a double layer of Cr and Au, and
  • the glass substrate is etched using an HF solution in (e).
  • the depth for etching the glass substrate using the HF solution is
  • the silicon substrate is etched using a KOH aqueous solution of
  • FIG. 1 shows a perspective view of a gyroscope according to a
  • FIG. 2 shows a floor plan of a gyroscope according to a preferred
  • FIG. 3 shows a magnified portion of FIG. 1 ;
  • FIG. 4 shows a partial SEM (scanning Electron Microscope)
  • FIG. 5 shows a magnified view of a driving or sensing spring of a
  • FIG. 6 shows an SEM photograph of a driving or sensing spring of
  • FIG. 7 shows a concept view of a driving or sensing connection
  • FIG. 8 shows a graph of resonance driving and sensing
  • FIGs. 9(a) to 9(h) show a process for fabricating a gyroscope
  • the invention is capable of modification in
  • FIG. 1 shows a perspective view of a gyroscope according to a
  • FIG. 2 shows a floor plan of
  • FIG. 3 shows a magnified portion of FIG. 1
  • FIG. 4 shows a partial
  • present invention comprises a glass substrate 10 and a silicon structure
  • the silicon structure comprises a driver, sensor, a plurality of
  • the sensor comprises a sensing fixing electrode 25, a sensing displacement electrode 22, and an edge gimbal 21.
  • springs comprise driving springs 28 and 29 for supporting and allowing
  • sensing connection spring 32 for connecting the sensing
  • the driving fixing electrode 26 of the driver is fixed by the
  • the driving displacement electrode 24 is supported by the external
  • inertial mass 23 is vibrated together with the driving displacement electrode
  • the sensing displacement electrode 22 is supported by the
  • the sensing displacement electrode 22 is connected to the
  • sensing connection spring 32 delivers the south to north directional
  • the edge gimbal 21 totally surrounds the driver and the sensor
  • Each tuning electrode 34 of a total of four, is formed on the east
  • spaced toothed portion is formed on the tuning electrode's surface facing
  • displacement electrodes 22 face those of the tuning electrode 34.
  • the displacement limit shaft 33 formed in the center of a cavity
  • driving displacement electrode 24 is electrostatically driven according to the
  • the inertial mass 23 is also vibrated
  • the tuning electrode 34 functions as an electric spring, and it varies the resonance frequency of the sensing
  • shaft 33 limits driving displacement of the inertial mass 23 within a uniform
  • FIG. 5 shows a magnified view of a driving or sensing spring of a
  • FIG. 6 shows an SEM photograph of a driving or sensing spring of a
  • the driving or sensing spring comprises a fixture shaft 1 , a
  • connector 2 connects the internal plate 3 with the external plate 4.
  • sensing displacement electrode which is determined according to a
  • the spring of this structure is referred to
  • the thin layer provided on the silicon structure As a folded spring. Referring to FIG. 5, the thin layer provided on the silicon structure
  • This metallic layer is a metallic layer. This metallic layer is formed to perform flip chip bonding
  • FIGs. 1 to 4 omit this illustration.
  • the structure are used for injecting etchant when etching the glass
  • the cavities are formed on all portions of the structure except for
  • connection spring 31 or 32 applied to the preferred embodiment of the
  • FIG. 7 shows a concept view of a driving or sensing connection
  • connection spring comprises a connector 2, an internal plate 3,
  • the connector 2 connects
  • connection spring or a sensing connection spring
  • FIG. 8 shows a graph of resonance driving and sensing
  • the present gyroscope provides a problem in that the output performance is very sensitive to external noise (the degrees of vacuum or variations of frequency). To overcome this problem, the present gyroscope provides a
  • the driving displacement is uniformly maintained in the
  • the gyroscope can be operated in the sensing resonance frequency
  • FIGs. 9(a) to 9(h) show a process for fabricating a gyroscope
  • resistive silicon wafer 20 and a glass substrate 10 such as Pyrex #7740 for
  • the silicon wafer 20 is etched using a KOH
  • the thickness of the silicon wafer 20 After the etching, the thickness of the silicon wafer 20
  • CMP chemical mechanical polishing
  • the etchant is a 36wt.% KOH aqueous solution, used at
  • KOH etching, hillocks and pit holes are formed on the silicon surface.
  • the surface of the silicon wafer 20 is
  • an oxidized layer (not illustrated) is deposited on the
  • the photoresist pattern includes a pattern for
  • the oxidized layer is etched using the
  • photoresist pattern 50 as an etching mask, and reactive ion etching (RIE) is
  • the glass substrate 10 is etched in a 49% HF
  • the silicon structure 20 can float
  • layer 40 is flip-chip-bonded on an electrode structure for wiring on a printed
  • PCB circuit board
  • the photoresist and the oxidized layer are used as
  • the gyroscope is fabricated based on very simple processes, and
  • the fabricated gyroscope has only one
  • gyroscope is connected to a circuit.
  • the driver and the sensor of the gyroscope structure adopt a
  • the Q value of the structure may be predicted based on the
  • the structure are designed to be greater than 5kHz in order to remove
  • the driving and sensing frequencies are predicted
  • a displacement limiter that artificially limits the displacement
  • the gyroscope structure has a form basically identical with a two-
  • the number of combed electrode structures in the structure is maximized in order to maximize the driving and sensing sensitivities
  • edge gimbals are adopted in order to minimize mechanical interference.
  • the size of the gyroscope structure is 8 x 8 mm 2 , and the whole size,
  • the thickness of the structure is designed to be 50 ⁇ m. Also, the thickness of the structure is designed to be 50 ⁇ m.
  • gyroscope structure is floated above the glass substrate by 50 ⁇ m so as to
  • a damping value is to be calculated in order to
  • the driver has 426 combed electrode structures and 6 folded
  • the spring coefficient is calculated to be 2,684 and the driving
  • the driving voltage is set to be
  • the detector has 692 combed electrode structures and 6 folded
  • the Q factor of the detector is calculated to
  • the oxidized layer used as a deep RIE etching mask undergoes an
  • deep RIE is fabricated to be narrower than the conventional one by about
  • the thickness of the fabricated structure is 44 ⁇ m, and the deep RIE is
  • the gap between the substrate and the structure is measured to be 37 ⁇ m.
  • the gyroscope according to the present invention has 426 driving
  • the gyroscope has a displacement limiter provided in the
  • * represents a calculated displacement with applied voltage
  • V(t) 15 + 3cos ⁇ dn [V] (bi-directional), and ** shows a measured
  • the driver the operation of the sensor, or the operation of the driver and the
  • the resonance frequencies range between 5,500 and 6,500Hz
  • the driving voltage is artificially increased to check the
  • the present invention provides an electrostatically driven and
  • a gyroscope operable in atmospheric pressure is provided;
  • etching cavities on its front side is provided through a single
  • the fabricated gyroscope structure can be directly integrated into
  • the present gyroscope can solve
  • the structure is designed so that it may have as many driving and
  • sensing electrodes as possible and as large an inertial mass as possible so
  • the gyroscope structure has the
  • limiting driving displacement is mechanically added so as to provide a
  • the fabricated gyroscope is operable in atmospheric pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
PCT/KR2002/000135 2001-02-12 2002-01-30 Gyroscope and fabrication method thereof Ceased WO2002064497A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/257,532 US6845668B2 (en) 2001-02-12 2002-01-30 Gyroscope
DE60229919T DE60229919D1 (https=) 2001-02-12 2002-01-30
EP02711501A EP1360144B1 (en) 2001-02-12 2002-01-30 Gyroscope and fabrication method thereof
JP2002564435A JP3713019B2 (ja) 2001-02-12 2002-01-30 ジャイロスコープ及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2001-0006695A KR100418624B1 (ko) 2001-02-12 2001-02-12 자이로스코프 및 그 제조 방법
KR2001/6695 2001-02-12

Publications (1)

Publication Number Publication Date
WO2002064497A1 true WO2002064497A1 (en) 2002-08-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2002/000135 Ceased WO2002064497A1 (en) 2001-02-12 2002-01-30 Gyroscope and fabrication method thereof

Country Status (8)

Country Link
US (1) US6845668B2 (https=)
EP (1) EP1360144B1 (https=)
JP (1) JP3713019B2 (https=)
KR (1) KR100418624B1 (https=)
CN (1) CN1242913C (https=)
AT (1) ATE414674T1 (https=)
DE (1) DE60229919D1 (https=)
WO (1) WO2002064497A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004101428A1 (en) * 2003-05-07 2004-11-25 Honeywell International Inc. Methods and apparatus for attaching mems devices to housing
US7037805B2 (en) 2003-05-07 2006-05-02 Honeywell International Inc. Methods and apparatus for attaching a die to a substrate
US7491567B2 (en) 2005-11-22 2009-02-17 Honeywell International Inc. MEMS device packaging methods

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Publication number Priority date Publication date Assignee Title
SG112898A1 (en) * 2003-12-11 2005-07-28 Singapore Tech Dynamics Pte Sensing apparatus, system and method
JP2005326620A (ja) * 2004-05-14 2005-11-24 Fujitsu Ltd マイクロミラー素子
CN100338470C (zh) * 2005-03-25 2007-09-19 中北大学 单片双惯性参数加速度计陀螺仪
JP5070778B2 (ja) * 2006-09-20 2012-11-14 株式会社デンソー 力学量センサ
US8061201B2 (en) * 2007-07-13 2011-11-22 Georgia Tech Research Corporation Readout method and electronic bandwidth control for a silicon in-plane tuning fork gyroscope
US8748206B2 (en) 2010-11-23 2014-06-10 Honeywell International Inc. Systems and methods for a four-layer chip-scale MEMS device
US9493344B2 (en) 2010-11-23 2016-11-15 Honeywell International Inc. MEMS vertical comb structure with linear drive/pickoff
US9171964B2 (en) 2010-11-23 2015-10-27 Honeywell International Inc. Systems and methods for a three-layer chip-scale MEMS device
US8776601B2 (en) 2010-11-23 2014-07-15 Honeywell International Inc. MEMS sensor using multi-layer movable combs
CN102507981B (zh) * 2011-11-02 2013-06-05 重庆理工大学 一种带耦合梁结构的单敏感质量元硅微二维加速度传感器
CN102633227B (zh) * 2012-03-16 2014-07-23 中北大学 一种mems惯性传感器结构压膜阻尼可调装置
US9581447B2 (en) * 2014-07-08 2017-02-28 Honeywell International Inc. MEMS gyro motor loop filter
US9903718B2 (en) * 2015-05-28 2018-02-27 Invensense, Inc. MEMS device mechanical amplitude control
US10514259B2 (en) 2016-08-31 2019-12-24 Analog Devices, Inc. Quad proof mass MEMS gyroscope with outer couplers and related methods
US10415968B2 (en) 2016-12-19 2019-09-17 Analog Devices, Inc. Synchronized mass gyroscope
US10697774B2 (en) 2016-12-19 2020-06-30 Analog Devices, Inc. Balanced runners synchronizing motion of masses in micromachined devices
US10627235B2 (en) 2016-12-19 2020-04-21 Analog Devices, Inc. Flexural couplers for microelectromechanical systems (MEMS) devices
FR3065800B1 (fr) * 2017-04-27 2019-08-02 Safran Resonateur configure pour etre integre a un capteur angulaire inertiel
US10948294B2 (en) 2018-04-05 2021-03-16 Analog Devices, Inc. MEMS gyroscopes with in-line springs and related systems and methods
US11193771B1 (en) 2020-06-05 2021-12-07 Analog Devices, Inc. 3-axis gyroscope with rotational vibration rejection
US11686581B2 (en) 2020-06-08 2023-06-27 Analog Devices, Inc. Stress-relief MEMS gyroscope
CN116075728A (zh) 2020-06-08 2023-05-05 美国亚德诺半导体公司 驱动和感测应力释放装置
CN111609844A (zh) * 2020-06-18 2020-09-01 中汽研汽车检验中心(天津)有限公司 一种陀螺仪安装固定装置及应用结构
US11698257B2 (en) 2020-08-24 2023-07-11 Analog Devices, Inc. Isotropic attenuated motion gyroscope
CN113135548B (zh) * 2021-04-20 2024-06-11 广州蜂鸟传感科技有限公司 一种压电微机械执行器

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WO2000068640A2 (en) * 1999-04-21 2000-11-16 The Regents Of The University Of California Micro-machined angle-measuring gyroscope

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DE10001361A1 (de) * 1999-01-15 2000-07-20 Samsung Electro Mech Verfahren zum Herstellen eines Mikroträgheitssensors
WO2000068640A2 (en) * 1999-04-21 2000-11-16 The Regents Of The University Of California Micro-machined angle-measuring gyroscope

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004101428A1 (en) * 2003-05-07 2004-11-25 Honeywell International Inc. Methods and apparatus for attaching mems devices to housing
US6927098B2 (en) * 2003-05-07 2005-08-09 Honeywell International Inc. Methods and apparatus for attaching MEMS devices to housing
US7037805B2 (en) 2003-05-07 2006-05-02 Honeywell International Inc. Methods and apparatus for attaching a die to a substrate
US7491567B2 (en) 2005-11-22 2009-02-17 Honeywell International Inc. MEMS device packaging methods

Also Published As

Publication number Publication date
KR20020066486A (ko) 2002-08-19
JP3713019B2 (ja) 2005-11-02
CN1242913C (zh) 2006-02-22
JP2004518964A (ja) 2004-06-24
US20030159509A1 (en) 2003-08-28
US6845668B2 (en) 2005-01-25
ATE414674T1 (de) 2008-12-15
DE60229919D1 (https=) 2009-01-02
EP1360144A1 (en) 2003-11-12
KR100418624B1 (ko) 2004-02-11
EP1360144B1 (en) 2008-11-19
CN1457319A (zh) 2003-11-19

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