WO2002063696A1 - Dispositif a semi-conducteurs - Google Patents
Dispositif a semi-conducteurs Download PDFInfo
- Publication number
- WO2002063696A1 WO2002063696A1 PCT/JP2002/000899 JP0200899W WO02063696A1 WO 2002063696 A1 WO2002063696 A1 WO 2002063696A1 JP 0200899 W JP0200899 W JP 0200899W WO 02063696 A1 WO02063696 A1 WO 02063696A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- contact area
- gate contact
- buried
- gate
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001029573A JP3916874B2 (ja) | 2001-02-06 | 2001-02-06 | 半導体装置 |
| JP2001-029573 | 2001-02-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002063696A1 true WO2002063696A1 (fr) | 2002-08-15 |
Family
ID=18893901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/000899 WO2002063696A1 (fr) | 2001-02-06 | 2002-02-04 | Dispositif a semi-conducteurs |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3916874B2 (ja) |
| WO (1) | WO2002063696A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4848595B2 (ja) * | 2001-05-16 | 2011-12-28 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
| DE10213534B4 (de) * | 2002-03-26 | 2007-06-21 | Siced Electronics Development Gmbh & Co. Kg | Halbleiteraufbau mit Schaltelement und Randelement |
| JP4237086B2 (ja) * | 2004-03-22 | 2009-03-11 | 関西電力株式会社 | 電圧制御型半導体装置 |
| JP6964564B2 (ja) * | 2018-07-20 | 2021-11-10 | 三菱電機株式会社 | 半導体装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57166075A (en) * | 1981-04-07 | 1982-10-13 | Hitachi Ltd | Semiconductor device |
| EP0822600A1 (en) * | 1996-07-29 | 1998-02-04 | Motorola, Inc. | Lateral gate, vertical drift region transistor |
| JP2000031483A (ja) * | 1998-07-14 | 2000-01-28 | Kansai Electric Power Co Inc:The | 静電誘導半導体装置 |
| WO2000022679A1 (fr) * | 1998-10-09 | 2000-04-20 | The Kansai Electric Power Co., Inc. | Dispositif semi-conducteur a effet de champ |
| US6117735A (en) * | 1998-01-06 | 2000-09-12 | Fuji Electric Co., Ltd. | Silicon carbide vertical FET and method for manufacturing the same |
-
2001
- 2001-02-06 JP JP2001029573A patent/JP3916874B2/ja not_active Expired - Fee Related
-
2002
- 2002-02-04 WO PCT/JP2002/000899 patent/WO2002063696A1/ja active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57166075A (en) * | 1981-04-07 | 1982-10-13 | Hitachi Ltd | Semiconductor device |
| EP0822600A1 (en) * | 1996-07-29 | 1998-02-04 | Motorola, Inc. | Lateral gate, vertical drift region transistor |
| US6117735A (en) * | 1998-01-06 | 2000-09-12 | Fuji Electric Co., Ltd. | Silicon carbide vertical FET and method for manufacturing the same |
| JP2000031483A (ja) * | 1998-07-14 | 2000-01-28 | Kansai Electric Power Co Inc:The | 静電誘導半導体装置 |
| WO2000022679A1 (fr) * | 1998-10-09 | 2000-04-20 | The Kansai Electric Power Co., Inc. | Dispositif semi-conducteur a effet de champ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3916874B2 (ja) | 2007-05-23 |
| JP2002231947A (ja) | 2002-08-16 |
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