WO2002061473A3 - Halbleiterelement mit optoelektronischer signalübertragung und verfahren zum erzeugen eines solchen halbleiterelements - Google Patents

Halbleiterelement mit optoelektronischer signalübertragung und verfahren zum erzeugen eines solchen halbleiterelements Download PDF

Info

Publication number
WO2002061473A3
WO2002061473A3 PCT/DE2002/000258 DE0200258W WO02061473A3 WO 2002061473 A3 WO2002061473 A3 WO 2002061473A3 DE 0200258 W DE0200258 W DE 0200258W WO 02061473 A3 WO02061473 A3 WO 02061473A3
Authority
WO
WIPO (PCT)
Prior art keywords
semi
conductor element
producing
signal transmission
type
Prior art date
Application number
PCT/DE2002/000258
Other languages
English (en)
French (fr)
Other versions
WO2002061473A2 (de
Inventor
Bernhard Stegmueller
Original Assignee
Infineon Technologies Ag
Bernhard Stegmueller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Bernhard Stegmueller filed Critical Infineon Technologies Ag
Priority to JP2002561985A priority Critical patent/JP2004523900A/ja
Priority to EP02706628A priority patent/EP1358514A2/de
Priority to US10/470,447 priority patent/US20040105609A1/en
Publication of WO2002061473A2 publication Critical patent/WO2002061473A2/de
Publication of WO2002061473A3 publication Critical patent/WO2002061473A3/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/423—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using guiding surfaces for the alignment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/801—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water using optical interconnects, e.g. light coupled isolators, circuit board interconnections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12109—Filter
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Led Devices (AREA)

Abstract

Die Erfindung betrifft ein Halbleiterelement (100) mit einer integrierten Halbleiterstruktur. Auf dieser integrierten Halbleiterstruktur sind ein optoelektronischer Sender (103) sowie ein optoelektronischer Empfänger (104) befestigt. Der optoeleoktronische Sender (103) und der optoelektronische Empfänger (104) sind zur optoelektronischen Signalübertragung innerhalb des Halbleiterelements (100) eingerichtet, optisch miteinander gekoppelt und mittels eines optischen Filterelementes (105) von ihrer Umgebung optisch entkoppelt. Die Erfindung betrifft weiterhin ein Verfahren zum Erzeugen eines derartigen Halbleiterelements (100).
PCT/DE2002/000258 2001-02-01 2002-01-25 Halbleiterelement mit optoelektronischer signalübertragung und verfahren zum erzeugen eines solchen halbleiterelements WO2002061473A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002561985A JP2004523900A (ja) 2001-02-01 2002-01-25 光電子信号を伝送する半導体素子、および、そのような半導体素子の製造方法
EP02706628A EP1358514A2 (de) 2001-02-01 2002-01-25 Halbleiterelement mit optoelektronischer signalübertragung und verfahren zum erzeugen eines solchen halbleiterelements
US10/470,447 US20040105609A1 (en) 2001-02-01 2002-01-25 Optoelectronic signal transmission semi-conductor element and method for producing a semi-conductor element of said type

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10104563.8 2001-02-01
DE10104563A DE10104563A1 (de) 2001-02-01 2001-02-01 Halbleiterelement mit optoelektronischer Signalübertragung und Verfahren zum Erzeugen eines solchen Halbleiterelements

Publications (2)

Publication Number Publication Date
WO2002061473A2 WO2002061473A2 (de) 2002-08-08
WO2002061473A3 true WO2002061473A3 (de) 2002-09-26

Family

ID=7672516

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000258 WO2002061473A2 (de) 2001-02-01 2002-01-25 Halbleiterelement mit optoelektronischer signalübertragung und verfahren zum erzeugen eines solchen halbleiterelements

Country Status (5)

Country Link
US (1) US20040105609A1 (de)
EP (1) EP1358514A2 (de)
JP (1) JP2004523900A (de)
DE (1) DE10104563A1 (de)
WO (1) WO2002061473A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005274927A (ja) * 2004-03-24 2005-10-06 Furukawa Electric Co Ltd:The フォトニック結晶デバイス
US7894699B2 (en) * 2006-10-16 2011-02-22 Hewlett-Packard Development Company, L.P. Photonic based interconnects for interconnecting multiple integrated circuits
DE102008003089A1 (de) * 2007-08-06 2009-02-26 Siemens Ag Datenübertragungssystem und Verfahren zum Übertragen von Daten in einem Datenübertragungssystem
WO2012100338A1 (en) * 2011-01-25 2012-08-02 Opalux Incorporated Photonic crystal device with infiltrating component
US9423560B2 (en) 2011-12-15 2016-08-23 Alcatel Lucent Electronic/photonic integrated circuit architecture and method of manufacture thereof
US9508879B2 (en) * 2013-10-23 2016-11-29 Alcatel Lucent Detector device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4838633A (en) * 1985-03-18 1989-06-13 Hitachi, Ltd. Semiconductor device with high speed signal transmission arrangement utilizing light
US5526449A (en) * 1993-01-08 1996-06-11 Massachusetts Institute Of Technology Optoelectronic integrated circuits and method of fabricating and reducing losses using same
US5838174A (en) * 1995-11-24 1998-11-17 Denso Corporation Photocoupler having element isolation layers for low cross-talk low stress and high break down voltage
WO1999041626A1 (de) * 1998-02-10 1999-08-19 Infineon Technologies Ag Optische struktur und verfahren zu deren herstellung
EP0939326A2 (de) * 1998-02-26 1999-09-01 Lucent Technologies Inc. Optische Anordnung mit einer beschichteten Komponente
JPH11271546A (ja) * 1998-03-20 1999-10-08 Fujitsu Ltd 光送受信デバイス

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2677490B1 (fr) * 1991-06-07 1997-05-16 Thomson Csf Emetteur-recepteur optique a semiconducteurs.
US5434426A (en) * 1992-09-10 1995-07-18 Kabushiki Kaisha Toshiba Optical interconnection device
JPH06224406A (ja) * 1993-01-27 1994-08-12 Mitsubishi Electric Corp 光集積回路
DE19746350A1 (de) * 1997-10-21 1999-04-22 Bosch Gmbh Robert Transceiver für Wellenlängemultiplex-Verfahren

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4838633A (en) * 1985-03-18 1989-06-13 Hitachi, Ltd. Semiconductor device with high speed signal transmission arrangement utilizing light
US5526449A (en) * 1993-01-08 1996-06-11 Massachusetts Institute Of Technology Optoelectronic integrated circuits and method of fabricating and reducing losses using same
US5838174A (en) * 1995-11-24 1998-11-17 Denso Corporation Photocoupler having element isolation layers for low cross-talk low stress and high break down voltage
WO1999041626A1 (de) * 1998-02-10 1999-08-19 Infineon Technologies Ag Optische struktur und verfahren zu deren herstellung
EP0939326A2 (de) * 1998-02-26 1999-09-01 Lucent Technologies Inc. Optische Anordnung mit einer beschichteten Komponente
JPH11271546A (ja) * 1998-03-20 1999-10-08 Fujitsu Ltd 光送受信デバイス

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Section PQ Week 199954, Derwent World Patents Index; Class P81, AN 1999-623037, XP002207967 *

Also Published As

Publication number Publication date
JP2004523900A (ja) 2004-08-05
EP1358514A2 (de) 2003-11-05
DE10104563A1 (de) 2002-08-22
WO2002061473A2 (de) 2002-08-08
US20040105609A1 (en) 2004-06-03

Similar Documents

Publication Publication Date Title
EP1724568A3 (de) Optoelektronische Sensoreinrichtung
AU2002306784A1 (en) Integral differential optical signal receiver
WO2002091040A3 (en) Sub-wavelength efficient polarization filter (swep filter)
EP1355463A3 (de) Einstellung eines Transversalfilters
WO2006023277A3 (en) Frequency division and/or wavelength division multiplexed recursive fiber optic telemetry scheme for an optical sensor array
WO2001004671A3 (de) Sende- und empfangsbaugruppe mit parabolspiegeln und positioniergestaltungen sowie verfahren zur herstellung
EP1055946A3 (de) Verjüngender Mehrmoden-Interferenzkoppler
TW514328U (en) Compact pluggable case for optical transmitting/receiving module
WO2002059938A3 (en) Spatially modulated reflector for an optoelectronic device
WO2003071286A3 (en) Apparatus and method for measuring velocity of a projectile in a barrel
EP0782023A3 (de) Optisches Sender-Empfänger-Modul
EP1168687A3 (de) Vorrichtung zur bidirektionalen Signalübertragung mittels Licht
EP0362789A3 (de) Integrierte Art von optischem Knoten und optisches Nachrichtensystem unter Verwendung desselben
WO2003003059A3 (en) Optical system that improves spectrally distorted signals
WO2002061473A3 (de) Halbleiterelement mit optoelektronischer signalübertragung und verfahren zum erzeugen eines solchen halbleiterelements
EP1160992A3 (de) Sende-Empfänger und Verfahren zur Implementierung
AU2002367907A1 (en) Demultiplexing optical signal receiver photonic integrated circuit (rxpic) and associated transmitter and method of testing a photonic integrated circuit
EP1329755A3 (de) Passiv ausgerichtete optoelektronische Bauteile für optische Parallelverbindungen
WO1998054603A8 (en) Composite ophthalmic lens
WO2003005613A8 (de) Opto-elektronisches transceivermodul und verfahren zum empfang optischer signale
WO2003089966A3 (en) Wavelenght selective fiber optic coupler
EP0921613A3 (de) KOMPAKTER FESTKÖRPERLASER und Sender unter Verwendung desselben
EP1202479A4 (de) Vorrichtung zur kompensation von dispersion
WO2003036343A3 (en) Mechanical beam steering for optical integrated circuits
TW200509566A (en) Optical transceiver module

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

AK Designated states

Kind code of ref document: A3

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2002706628

Country of ref document: EP

Ref document number: 2002561985

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 2002706628

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10470447

Country of ref document: US

WWW Wipo information: withdrawn in national office

Ref document number: 2002706628

Country of ref document: EP