WO2002050920A1 - Dispositif de multiplication du courant photoelectrique a reponse rapide - Google Patents

Dispositif de multiplication du courant photoelectrique a reponse rapide Download PDF

Info

Publication number
WO2002050920A1
WO2002050920A1 PCT/JP2001/010458 JP0110458W WO0250920A1 WO 2002050920 A1 WO2002050920 A1 WO 2002050920A1 JP 0110458 W JP0110458 W JP 0110458W WO 0250920 A1 WO0250920 A1 WO 0250920A1
Authority
WO
WIPO (PCT)
Prior art keywords
photocurrent
light
layer
organic semiconductor
multiplication
Prior art date
Application number
PCT/JP2001/010458
Other languages
English (en)
Japanese (ja)
Inventor
Masahiro Hiramoto
Masaaki Yokoyama
Original Assignee
Japan Science And Technology Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science And Technology Corporation filed Critical Japan Science And Technology Corporation
Publication of WO2002050920A1 publication Critical patent/WO2002050920A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/652—Cyanine dyes

Definitions

  • the present invention relates to a photocurrent multiplier, and more particularly, to a photocurrent-multiplier using a photocurrent multiplication phenomenon caused by a photoconductive organic semiconductor, and further comprising an organic electroluminescence (organic EL) layer to convert light to light.
  • the present invention relates to a photocurrent multiplier including a light-to-light conversion element for obtaining a light field.
  • the photocurrent multiplier can be used, for example, for a photosensor. Background art
  • a photocurrent multiplication device using a photocurrent multiplication phenomenon by a photoconductive organic semiconductor has used a photocurrent amplification effect at an organic Z metal interface.
  • a photomultiplier has a San-Germanti-type cell structure in which a photoconductive organic semiconductor layer or a laminate of an organic electroluminescent layer and an organic electroluminescent layer is sandwiched between two metal electrodes.
  • the photoconductive organic semiconductor layer a single vapor-deposited thin film composed of only one kind of organic semiconductor, which was highly purified by purification, was used.
  • the photomultiplier layer containing a photoconductive organic semiconductor can be realized not only as a vacuum-deposited film but also as a resin-dispersed film in which a photoconductive organic semiconductor is dispersed in a resin (Nishikawa).
  • the multiplication factor (the ratio of the number of electrons due to the multiplied photocurrent flowing through the element to the number of incident photons) of the photomultiplier using the photoconductive organic semiconductor of the conventional single vapor deposition thin film described above reaches 100,000 times. Since it has photodetection ability comparable to the photomultiplier tubes currently used for photodetection, it has sufficient potential as an optical sensing device. However, it takes several tens of seconds to respond to the start of light irradiation (light on) and the stop of light irradiation (light off) of the multiplied photocurrent. In other words, the photoresponse speed of the multiplied photocurrent is extremely high. It had the disadvantage of being slow, and was an obstacle to applying the photocurrent multiplier as a photosensor.
  • the present invention also provides a resin dispersion film in which the photocurrent multiplication layer is a vacuum deposited film.
  • the device is intended for a photocurrent multiplication device that includes both a photocurrent multiplication device and an optical-to-light conversion device, and the multiplication photocurrent in such a photocurrent multiplication device is intended.
  • the purpose is to increase the light response speed of the light. Disclosure of the invention
  • the present inventors have found that a photoconductive organic semiconductor thin film to which a different material is added has been a problem in contrast to the above-described conventional photomultiplier using a vapor-deposited thin film made of a single organic semiconductor or a resin dispersion film. It was found that the light response speed of the multiplied photocurrent can be remarkably increased.
  • the present invention is directed to a method of obtaining light irradiation-induced current with a multiplied quantum yield by irradiating light to a photocurrent multiplication layer containing a photoconductive organic semiconductor while applying a voltage to the photocurrent multiplication layer.
  • a current multiplying device in which an organic electroluminescent layer is integrated with a photocurrent multiplying layer, and a light-to-light conversion light is obtained from the organic electroluminescent layer by irradiating the photocurrent multiplying layer with light.
  • the photocurrent multiplication layer contains a heterogeneous material that affects photoelectric conversion in addition to the photoconductive organic semiconductor.
  • the photocurrent multiplying device of the present invention includes one in which the photocurrent multiplying layer is a vapor-deposited film and one in which the photocurrent multiplying layer is a resin dispersion film.
  • the photoresponse speed of the multiplied photocurrent which has been a problem so far, can be remarkably increased, and the present invention can be applied to a photosensor.
  • a high-speed response photocurrent multiplier can be realized.
  • FIG. 5 shows the dependence of the multiplication factor on the applied voltage ( a ) and the photoresponse characteristics of the multiplication photocurrent (b) when using a Me-PTC thin film without any doping as the photocurrent multiplication layer.
  • FIG. 6 is a chemical formula illustrating a compound used as a heterogeneous material.
  • Fig. 7 shows the dependence of the multiplication factor on the applied voltage (a) and the light of the multiplied photocurrent when using a Me-PTC thin film doped with CuPc (2.3%) as the photomultiplier layer. This is the response characteristic (b).
  • FIG. 1 (A) is a cross-sectional view of one embodiment of the high-speed response photocurrent multiplier of the present invention.
  • Reference numeral 1 denotes a photocurrent multiplication layer in which a different material is added (doped) to a photoconductive organic semiconductor.
  • Reference numerals 2 and 3 denote metal electrodes, and the metal electrode 3 is deposited on a glass substrate 5. At least one of the metal electrodes 2 and 3 is transparent or translucent to incident light.
  • the glass substrate 5 may be on either side of the electrodes 2 and 3.
  • Reference numeral 4 denotes a power supply for applying a voltage to the cell. A voltage was applied from the power supply 4 to the photomultiplier layer 1 by the electrodes 2 and 3. By irradiating the photocurrent multiplication layer 1 with light 18 in this state, photocurrent multiplication occurs at the interface between the photocurrent multiplication layer 1 and the electrode 2.
  • an organic electroluminescent layer is laminated and integrated with the photocurrent multiplication layer 1.
  • An example of the cell structure in that case is shown in FIG. 1 (B).
  • the organic electroluminescent layer 10 is laminated and integrated with the photocurrent multiplying layer 1.
  • An ITO electrode 3 is provided on the photocurrent multiplication layer 1 of this laminate, and an Au electrode 2 is provided on the organic electroluminescent layer 10.
  • a hole transport layer 11 is preferably interposed between the organic electroluminescent layer 10 and the electrode 2.
  • the glass substrate 5 may be on either side of the electrodes 2 and 3, but it is assumed here that it is provided on the side supporting the electrode 3.
  • Light is applied to the photocurrent multiplication layer 1 in a state where a voltage is applied by the power supply 4 to the laminate of the photocurrent multiplication layer 1 and the organic electroluminescent layer 10 via the hole transport layer 11 by the electrodes 2 and 3.
  • light-light converted light 20 is obtained from the organic electroluminescent layer 10.
  • 1 8 ′ represents the transmitted light of the incident light 18 to this element.
  • the electrode 3 since the light 18 is applied to the photomultiplier 1 through the electrode 3, the electrode 3 must be transparent to the irradiated light. Further, since the light-light converted light 20 is extracted from the organic electroluminescent layer 10 through the hole transport layer 11 and the electrode 2, the hole transport layer 11 and the electrode 2 are not transparent to the light 20. must not.
  • These photocurrent multipliers can be manufactured by laminating each layer on a glass substrate 5.
  • Fig. 2 shows an example of a photoconductive organic semiconductor that generates light-irradiation-induced current with a multiplied quantum yield by light irradiation.
  • Phthalocyanine pigments and their derivatives MPc with various metals in the center, H2Pc without metals, with various substituents around
  • quinacridone pigments DQ
  • Borf Dilin merocyanine, etc.
  • perylene pigments and their derivatives manufactured by example, t_BuPh—PTC, PhEt—PTC, etc.
  • Im_PTCs with high photoelectric conversion ability there are also Im_PTCs with high photoelectric conversion ability.
  • Naphthalene derivatives perylene pigments whose perylene skeleton is naphthalene, such as NTCD A
  • C60 the photoconductive organic semiconductor that can be used in the present invention is not limited to these.
  • Organic semiconductors are included in the first category.
  • the organic semiconductor is not limited to one having photoconductivity as exemplified above, and may have no photoconductivity.
  • Al quinolinol Ichiru complex (A 1 q 3) as used in the organic electroluminescent layer (described later) and, triphenyl-Jiamin derivative used in the carrier transporting layer (TPD) (described later) such as also for added pressure It can be used as a dissimilar material.
  • the second category includes all organic materials having various substituents (such as _OH groups), metals, and inorganic semiconductors.
  • the third category includes gas-derived impurities (water, oxygen, etc.).
  • the first form of the photocurrent multiplying layer is a deposited film.
  • Evaporated films can be formed using a co-evaporation technology that simultaneously deposits a photoconductive organic semiconductor and a different material, Can be produced by a method using a photoconductive organic semiconductor to which is added as an evaporation source.
  • the thickness of the deposited film is preferably from 0.5 to 1.02 m. If the film thickness is smaller than this range, a pin pole is generated and reliability is reduced.
  • the second mode of the photocurrent multiplication layer is a resin-dispersed organic semiconductor film in which a photoconductive organic semiconductor and a different material are dispersed in a resin.
  • Polycarbonate shown as symbol C11 in FIG. 3
  • polyvinyl butyral shown as symbol C12 in FIG. 3
  • General-purpose polymers such as polypinyl alcohol, polystyrene, and methyl polymethacrylate, polyvinylcarbazole (shown as symbol C13 in Fig. 3), and polymethylphenylsilane. (Shown as symbol C14 in FIG. 3), and conductive polymers such as polydimethylsilane.
  • the concentration of the photoconductive organic semiconductor in the resin-dispersed organic semiconductor layer is preferably 30 to 60% by weight. If the concentration is less than 30% by weight, the conductivity of the film decreases, so that the photo-irradiation induced current decreases accordingly and the photocurrent multiplication characteristics and light-to-light conversion characteristics of the multiplication element decrease. come. Conversely, if the concentration is higher than 60% by weight, the photocurrent multiplication characteristics and the light-to-light conversion characteristics are improved, but the uniformity of the film is reduced, and the probability of conduction between the upper electrode and the lower electrode is increased. As the mechanical strength decreases, it becomes difficult to produce large-area devices.
  • the thickness of the resin-dispersed organic semiconductor layer is preferably 0.5 to 2.0 m. If the film thickness is smaller than this range, the ⁇ current increases, the light irradiation induced current decreases, and the photocurrent multiplication characteristics and the light-to-light conversion characteristics of the multiplication element decrease. In addition, the probability that the upper electrode and the lower electrode are conductive is increased. Conversely, when the film thickness is larger than this range, a predetermined voltage is applied to the resin-dispersed organic semiconductor layer. Requires a large power supply, which increases costs.
  • the organic electroluminescent layer constituting the light-to-light conversion element includes aluminum quinolinol complex (A 1 Q 3) (shown as symbol C 20 in FIG. 4), 3, 4, 9, and
  • a 1 Q 3 aluminum quinolinol complex
  • An example is a vapor-deposited film such as 10-perylenetetracarboxylic acid 3,4: 9,10-bis (phenylethylimide).
  • the appropriate thickness of the organic electroluminescent layer is 0.05 to 0.1 im.
  • a carrier transport layer (a hole transport layer or an electron transport layer) may be provided between the organic electroluminescent layer and the electrode.
  • the carrier transport layer includes a triphenyl diamine derivative (TPD) such as N, N-diphenyl N, N-bis (4-methylphenyl) -1,4 diamine (the symbol C 2 in FIG. 4).
  • TPD triphenyl diamine derivative
  • the thickness of the carrier transport layer is suitably from 0.05 to 0.1 m.
  • an ITO (indium tin oxide) transparent electrode as well as a vapor deposition film or a sputtering film of gold or other metal can be used.
  • the electrode film may be formed on a glass substrate, or may be formed on a laminate with a photocurrent multiplication layer or an organic electroluminescent layer by a vapor deposition method or a sputtering method.
  • An example of a combination of a photoconductive organic semiconductor and a different material included in the photocurrent multiplication is a combination in which the photoconductive organic semiconductor is a perylene pigment and the different material is copper phthalocyanine or perylene.
  • the metal electrode 2 is a translucent gold vapor-deposited film (film thickness 20 nm).
  • the metal electrode 3 uses a transparent electrode I T O (indium tin oxide) deposited on a glass substrate.
  • Reference numeral 4 denotes a power supply for applying a voltage to the cell.
  • a voltage was applied to the photocurrent multiplication layer 1 from the power supply 4 so that the electrode 2 became negative with respect to the electrode 3, and monochromatic light irradiation was performed from the electrode 2 or electrode 3 side, and the multiplication factor was measured.
  • Figure 5 shows the dependence of the multiplication factor on the applied voltage (a) and the photoresponse characteristics of the multiplied photocurrent when using the Me-PTC single vapor-deposited film without any addition as the photocurrent multiplication layer 1.
  • (B) is shown. The measurement was performed by irradiating 480 nm monochromatic light.
  • Copper phthalocyanine (CuPC) (Fig. 6) was doped by co-evaporation.
  • Fig. 7 shows the dependence of the multiplication factor on the applied voltage when a Me-PTC vapor-deposited thin film doped with 2.3% (volume ratio) of CuPc by co-evaporation was used as the photomultiplier layer 1. ) And the photoresponse characteristics (b) of the multiplied photocurrent.
  • the multiplication factor is lower than that of the pure Me_PTC, the response speed is considerably improved, and both the rise and fall times are about 1 second.
  • the speeding-up of the fall response during light-off and the effective suppression of hysteresis was successfully achieved for the first time by the heterogeneous material doping method.
  • the S / N ratio between the multiplied photocurrent and the ⁇ current.
  • Figure 8 shows the applied voltage dependence of the multiplication factor (a) and the multiplied photocurrent when a Me_PTC thin film doped with 1. 1.% (volume ratio) of perylene by co-evaporation was used as the photocurrent multiplication layer 1.
  • the photoresponse characteristics (b) are shown. In the measurement of Fig. 8 (b), the applied voltage was 3 V.
  • the photocurrent multiplication in Me-PTC is caused by the accumulation of photogenerated holes in traps near the negatively biased Au / Me-PTC interface, and a high electric field concentrated on the interface. Large numbers of electrons are tunnel injected into Me-PTC (see M. Hiramoto, T. Imahigas i, and M. Yokoyama, Applied Physics Letters, 64, 187 (1994)).
  • the mechanism of high-speed response by doping with CuPc or perylene is not clear at present.
  • the microstructure of the Me—PTC thin film which is an aggregate of crystals, is hardly affected by the low doping concentration. The following mechanisms are possible.
  • Me-PTC was used as the photoconductive organic semiconductor causing multiplication, but the present invention is applicable to all photoconductive organic semiconductors causing multiplication reported so far.
  • As a form of the organic film not only the vapor-deposited film of the example but also a resin dispersion film can be applied by adding and dispersing a different material.

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

On provoque la multiplication du courant photoélectrique au niveau de l'interface entre la couche de multiplication du courant photoélectrique (1) et l'électrode (2) en soumettant une couche de multiplication du courant photoélectrique (1) au rayonnement par lumière (18) tout en appliquant une tension sur la couche de multiplication du courant photoélectrique (1) par l'intermédiaire d'électrodes (2, 3). Ladite couche de multiplication du courant photoélectrique (1) constitue un film évaporé qui est formé par addition d'une matière différente sur un semi-conducteur organique photoconducteur (dopage). Ce semi-conducteur organique photoconducteur peut être un pigment de pérylène (Me-PTC). Le film de multiplication du courant photoélectrique présente une épaisseur de 500 nm. Le Me-PTC est sublimé et purifié deux fois avant son utilisation. L'électrode métallique (2) est constituée d'un film évaporé en or semi-transparent, dont l'épaisseur est de 20 nm, et l'électrode métallique (3) est constituée d'un ITO (Indium-oxyde d'étain) et est une électrode évaporée transparente réalisée sur un substrat de verre. La réponse lumineuse du courant photoélectrique multiplié est accélérée.
PCT/JP2001/010458 2000-12-19 2001-11-29 Dispositif de multiplication du courant photoelectrique a reponse rapide WO2002050920A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-386074 2000-12-19
JP2000386074A JP3426211B2 (ja) 2000-12-19 2000-12-19 高速応答光電流増倍装置

Publications (1)

Publication Number Publication Date
WO2002050920A1 true WO2002050920A1 (fr) 2002-06-27

Family

ID=18853230

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/010458 WO2002050920A1 (fr) 2000-12-19 2001-11-29 Dispositif de multiplication du courant photoelectrique a reponse rapide

Country Status (2)

Country Link
JP (1) JP3426211B2 (fr)
WO (1) WO2002050920A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004086518A1 (fr) * 2003-03-24 2004-10-07 Japan Science And Technology Agency Photocapteur de multiplication d'avalanche utilisant un cristal moleculaire extremement fin et procede de fabrication correspondant
WO2005060012A1 (fr) * 2003-12-17 2005-06-30 Sumitomo Chemical Company, Limited Dispositif de conversion de lumiere en lumiere organique
US10727262B2 (en) 2016-01-13 2020-07-28 Sony Corporation Photoelectric conversion element, imaging device, and electronic apparatus comprising a photoelectric conversion layer having at least a subphthalocyanine or a subphthalocyanine derivative and a carrier dopant

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013103A (ja) * 2004-06-25 2006-01-12 Sony Corp 有機電界発光素子
US7198977B2 (en) * 2004-12-21 2007-04-03 Eastman Kodak Company N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
CN101203968B (zh) * 2005-04-21 2010-05-19 株式会社半导体能源研究所 发光元件、发光器件和电子设备
JP2007013123A (ja) * 2005-06-03 2007-01-18 Fujifilm Corp 光電変換膜、光電変換素子、及び撮像素子、並びに、これらに電場を印加する方法
DE102006053320B4 (de) * 2006-11-13 2012-01-19 Novaled Ag Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter
KR101435517B1 (ko) * 2008-05-28 2014-08-29 삼성전자주식회사 광검출 분자를 이용한 이미지 센서 및 그 구동방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210778A (ja) * 1988-06-29 1990-01-16 Asahi Chem Ind Co Ltd 光電変換素子
JPH06275864A (ja) * 1993-03-24 1994-09-30 Mitsui Toatsu Chem Inc 光−光変換素子
JPH06326338A (ja) * 1993-05-13 1994-11-25 Matsushita Electric Ind Co Ltd 光電変換素子およびその製造方法
JPH11329736A (ja) * 1998-05-20 1999-11-30 Futaba Corp 光変調鏡

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210778A (ja) * 1988-06-29 1990-01-16 Asahi Chem Ind Co Ltd 光電変換素子
JPH06275864A (ja) * 1993-03-24 1994-09-30 Mitsui Toatsu Chem Inc 光−光変換素子
JPH06326338A (ja) * 1993-05-13 1994-11-25 Matsushita Electric Ind Co Ltd 光電変換素子およびその製造方法
JPH11329736A (ja) * 1998-05-20 1999-11-30 Futaba Corp 光変調鏡

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HIRAMOTO: "Photocurrent multiplication in organic pigment films", APPLIED PHYSICS LETTERS, vol. 64, no. 2, 10 January 1994 (1994-01-10), pages 187 - 189, XP000416819 *
KATSUME: "High photon conversion in a light transducer combining organic electro luminescent diode with photoresponsive organic pigment film", APPLIED PHYSICS LETTERS, vol. 64, no. 19, 9 May 1994 (1994-05-09), pages 2546 - 2548, XP000449550 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004086518A1 (fr) * 2003-03-24 2004-10-07 Japan Science And Technology Agency Photocapteur de multiplication d'avalanche utilisant un cristal moleculaire extremement fin et procede de fabrication correspondant
WO2005060012A1 (fr) * 2003-12-17 2005-06-30 Sumitomo Chemical Company, Limited Dispositif de conversion de lumiere en lumiere organique
GB2427308A (en) * 2003-12-17 2006-12-20 Sumitomo Chemical Co Organic light-light conversion device
JPWO2005060012A1 (ja) * 2003-12-17 2007-12-13 住友化学株式会社 有機光−光変換デバイス
GB2427308B (en) * 2003-12-17 2009-02-25 Sumitomo Chemical Co Organic light-light conversion device
US8003976B2 (en) 2003-12-17 2011-08-23 Sumitomo Chemical Company, Limited Organic light-light conversion device
JP4781819B2 (ja) * 2003-12-17 2011-09-28 住友化学株式会社 有機光−光変換デバイス
US10727262B2 (en) 2016-01-13 2020-07-28 Sony Corporation Photoelectric conversion element, imaging device, and electronic apparatus comprising a photoelectric conversion layer having at least a subphthalocyanine or a subphthalocyanine derivative and a carrier dopant
US11107849B2 (en) 2016-01-13 2021-08-31 Sony Corporation Photoelectric conversion element, imaging device, and electronic apparatus to improve photoresponse while maintaining superior wavelenght selectivity of a subphthalocyanine and a subphthalocyanine derivative

Also Published As

Publication number Publication date
JP2002190616A (ja) 2002-07-05
JP3426211B2 (ja) 2003-07-14

Similar Documents

Publication Publication Date Title
Einzinger et al. Sensitization of silicon by singlet exciton fission in tetracene
Lee et al. High efficiency organic multilayer photodetectors based on singlet exciton fission
JP2010192931A (ja) 有機感光性光電子装置
EP0390523B1 (fr) Elément optique utilisant une héterojonction moléculaire
JP2008103670A (ja) 有機薄膜受光素子、有機薄膜受光素子の製造方法、有機薄膜受発光素子、有機薄膜受発光素子の製造方法、及び脈拍センサ
US9496315B2 (en) Top-gate bottom-contact organic transistor
JP2008135657A (ja) 光電変換素子、その製造方法、及び放射線画像検出器
Zafar et al. A MEHPPV/VOPcPhO composite based diode as a photodetector
WO2002050920A1 (fr) Dispositif de multiplication du courant photoelectrique a reponse rapide
Martínez‐Goyeneche et al. Narrowband monolithic perovskite–perovskite tandem photodetectors
Hiramoto et al. Fermi level shift in photoconductive organic pigment films measured by Kelvin vibrating capacitor method
Taghibakhsh et al. Characterization of short-wavelength-selective a-Si: H MSM photoconductors for large-area digital-imaging applications
WO2002021114A1 (fr) Procede de detection de gaz au moyen d'amplification de courant photoelectrique et similaire et detecteur de gaz
US20070042523A1 (en) Photoelectric current multiplier using molecular crystal and production method therefor
US6878960B2 (en) Multiplication device comprising resin-dispersed organic semiconductor film and method for producing the same
WO2011052781A1 (fr) Élément de conversion photoélectrique et dispositif de conversion photoélectrique
US6137118A (en) Vapochromic photodiode
Günster et al. Charge carrier photogeneration and transport in phthalocyanine/perylene thin film solar cells
JP2003282934A (ja) 異種有機半導体の混合薄膜による高速応答光電流増倍デバイス
JP3627311B2 (ja) 光電流増倍素子
Seo et al. Improvement in photoconductive properties of coumarin 30-evaporated film by fullerene doping for blue-sensitive photoconductors
JP3946484B2 (ja) 光電流増倍装置及びその増倍率制御方法
JP4878712B2 (ja) 高速応答光電流増倍装置
Somani et al. Sensitization effect in conducting polyaniline by rhodamine 6G
Kim et al. 9‐4: Fabrication of the Indirect X‐Ray Detector Using Organic Photodiode

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): DE FR GB

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application