WO2002044998A1 - Composant dote d'une protection esd - Google Patents

Composant dote d'une protection esd Download PDF

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Publication number
WO2002044998A1
WO2002044998A1 PCT/DE2001/004127 DE0104127W WO0244998A1 WO 2002044998 A1 WO2002044998 A1 WO 2002044998A1 DE 0104127 W DE0104127 W DE 0104127W WO 0244998 A1 WO0244998 A1 WO 0244998A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
contact
component according
component
electrically conductive
Prior art date
Application number
PCT/DE2001/004127
Other languages
German (de)
English (en)
Inventor
Jörg ZAPF
Maximilian Zellner
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2002044998A1 publication Critical patent/WO2002044998A1/fr

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1329Protecting the fingerprint sensor against damage caused by the finger

Definitions

  • the present invention relates to a component with a protective device against damage due to electrostatic charge.
  • this invention relates to a film sensor for biometric recognition.
  • Integrated circuits in semiconductor chips or on or in other carrier materials can be damaged or at least put out of function if electrostatic charges occur which flow out in an uncontrolled manner through circuit parts.
  • ESD electrostatic damage
  • US Pat. No. 6,091,082 describes a layer sequence for protection against electrostatic discharge for the top passivation of an integrated semiconductor sensor, which comprises a dielectric insulation layer, a mechanical protection layer and a discharge layer made of SiC x , which is electrically conductive to a certain degree.
  • DE 199 01 384 AI describes an electronic component with a protective structure contained therein, in which conductive surfaces are formed on a dielectric layer and an electrically conductive protective structure is provided above it is arranged, wherein the protective structure does not completely cover the conductive surfaces.
  • the object of the present invention is to provide a component with a layer structure, which is provided with effective ESD protection, which is intended to create the possibility of using a flexible carrier material.
  • the component according to the invention has an electrically conductive layer which is provided with contact points within a surface which is exposed to contact, in particular with a human skin surface. Electrical charges that are applied to the contact surface therefore flow into the conductive layer, so that there is no risk that those components of the component that are arranged in or under the contact surface are overcharged.
  • the electrically conductive layer can be applied to a flexible carrier film on which the component is manufactured. In the simplest case, it is sufficient if small areas of the upper side of the conductive side facing the contact surface or facing away from the carrier film or a substrate
  • FIG. 1 to 3 show different embodiments of the component according to the invention in cross section.
  • FIG. 4 shows a detail of a configuration of the component as a fingerprint sensor in supervision.
  • a layer structure is shown in cross section, in which on a carrier layer 1, z. B. a thin flexible film, an electrically conductive layer 2 provided as ESD protection is applied.
  • the actual layers intended for the component are located thereon.
  • this is an insulation layer 3, which first separates the conductive layer 2 from the layers arranged above it, in order to prevent undesired short circuits.
  • ⁇ rr ⁇ ⁇ ⁇ P- to P d 3 3 P- J PJ ⁇ P- P J P- ⁇ ⁇ P- ⁇ PJ CQ LQ p, tr PPJ tr O ⁇ P- ti ⁇ 3 P ' ⁇ ti ⁇ P - 2 ⁇ PJ PNPP CQ ⁇ rt P t
  • the contact surfaces 15 are formed in a size with diameters of typically approximately 15 ⁇ m to 20 ⁇ m. In view of the thickness of the layer structures, a direct contact between an overlying finger and the conductive layer 2 can be produced.
  • a raised configuration of the contact surfaces 15 by means of a preferably galvanic deposition of additional metal layers is appropriate in those cases in which a configuration according to FIG. 1 does not allow sufficiently good contact (for example to the skin surface).
  • the configuration of the layer structure required for the intended function of the component can in principle be chosen freely.
  • active components can also be integrated on the carrier layer 1.
  • the passivation layer 7 can be omitted or replaced by a multi-layer protective layer.
  • the structure of metallizations provided for the component can comprise one or more metallization layers, which can also be separated from one another with intermetallic dielectrics.
  • the layer structure provided for the component does not result in any fundamental restrictions for the configuration of the ESD protective layer described.

Landscapes

  • Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

Le composant contient une couche électroconductrice (2) qui présente des plages de contact (9) dans une surface de contact dotée d'une couche de passivation (7). En cas de contact, des charges électriques appliquées s'écoulent dans la couche conductrice. Le composant est particulièrement approprié notamment comme capteur d'empreinte digitales à mesure capacitive avec métallisation structurée (5) pour la détection d'image. La couche (2) produisant la protection ESD peut être appliquée sur une couche support (1) constituée d'un film en Kapton E (capteur film).
PCT/DE2001/004127 2000-11-28 2001-11-02 Composant dote d'une protection esd WO2002044998A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10059099A DE10059099C1 (de) 2000-11-28 2000-11-28 Bauelement mit ESD-Schutz, z.B. Foliensensor zur biometrischen Erkennung (Fingerabdruckerkennungssensor)
DE10059099.3 2000-11-28

Publications (1)

Publication Number Publication Date
WO2002044998A1 true WO2002044998A1 (fr) 2002-06-06

Family

ID=7665003

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/004127 WO2002044998A1 (fr) 2000-11-28 2001-11-02 Composant dote d'une protection esd

Country Status (2)

Country Link
DE (1) DE10059099C1 (fr)
WO (1) WO2002044998A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003098541A1 (fr) * 2002-05-17 2003-11-27 Authentec Inc. Detecteur d'empreinte digitale presentant une protection esd amelioree et procedes associes
US7697729B2 (en) 2004-01-29 2010-04-13 Authentec, Inc. System for and method of finger initiated actions
US7831070B1 (en) 2005-02-18 2010-11-09 Authentec, Inc. Dynamic finger detection mechanism for a fingerprint sensor
US8231056B2 (en) 2005-04-08 2012-07-31 Authentec, Inc. System for and method of protecting an integrated circuit from over currents
US8866347B2 (en) 2010-01-15 2014-10-21 Idex Asa Biometric image sensing
CN106033531A (zh) * 2014-12-11 2016-10-19 义隆电子股份有限公司 具有静电防护结构的指纹感测器
US9600704B2 (en) 2010-01-15 2017-03-21 Idex Asa Electronic imager using an impedance sensor grid array and method of making
US9798917B2 (en) 2012-04-10 2017-10-24 Idex Asa Biometric sensing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801095A (en) * 1995-06-06 1998-09-01 Advanced Micro Devices, Inc. Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology
EP1017009A2 (fr) * 1998-12-30 2000-07-05 STMicroelectronics, Inc. Appareil et méthode pour mettre en contact une couche conductive d'un capteur
WO2000042657A1 (fr) * 1999-01-15 2000-07-20 Infineon Technologies Ag Composant electronique et utilisation d'une structure de protection a l'interieur dudit composant

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6091082A (en) * 1998-02-17 2000-07-18 Stmicroelectronics, Inc. Electrostatic discharge protection for integrated circuit sensor passivation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801095A (en) * 1995-06-06 1998-09-01 Advanced Micro Devices, Inc. Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology
EP1017009A2 (fr) * 1998-12-30 2000-07-05 STMicroelectronics, Inc. Appareil et méthode pour mettre en contact une couche conductive d'un capteur
WO2000042657A1 (fr) * 1999-01-15 2000-07-20 Infineon Technologies Ag Composant electronique et utilisation d'une structure de protection a l'interieur dudit composant

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003098541A1 (fr) * 2002-05-17 2003-11-27 Authentec Inc. Detecteur d'empreinte digitale presentant une protection esd amelioree et procedes associes
US7076089B2 (en) 2002-05-17 2006-07-11 Authentec, Inc. Fingerprint sensor having enhanced ESD protection and associated methods
US7697729B2 (en) 2004-01-29 2010-04-13 Authentec, Inc. System for and method of finger initiated actions
US7831070B1 (en) 2005-02-18 2010-11-09 Authentec, Inc. Dynamic finger detection mechanism for a fingerprint sensor
US8231056B2 (en) 2005-04-08 2012-07-31 Authentec, Inc. System for and method of protecting an integrated circuit from over currents
US9600704B2 (en) 2010-01-15 2017-03-21 Idex Asa Electronic imager using an impedance sensor grid array and method of making
US9268988B2 (en) 2010-01-15 2016-02-23 Idex Asa Biometric image sensing
US8866347B2 (en) 2010-01-15 2014-10-21 Idex Asa Biometric image sensing
US9659208B2 (en) 2010-01-15 2017-05-23 Idex Asa Biometric image sensing
US10115001B2 (en) 2010-01-15 2018-10-30 Idex Asa Biometric image sensing
US10592719B2 (en) 2010-01-15 2020-03-17 Idex Biometrics Asa Biometric image sensing
US11080504B2 (en) 2010-01-15 2021-08-03 Idex Biometrics Asa Biometric image sensing
US9798917B2 (en) 2012-04-10 2017-10-24 Idex Asa Biometric sensing
US10088939B2 (en) 2012-04-10 2018-10-02 Idex Asa Biometric sensing
US10101851B2 (en) 2012-04-10 2018-10-16 Idex Asa Display with integrated touch screen and fingerprint sensor
US10114497B2 (en) 2012-04-10 2018-10-30 Idex Asa Biometric sensing
CN106033531A (zh) * 2014-12-11 2016-10-19 义隆电子股份有限公司 具有静电防护结构的指纹感测器

Also Published As

Publication number Publication date
DE10059099C1 (de) 2002-06-06

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