WO2002044815A3 - Multilayer elements containing photoresist compositions and their use in microlithography - Google Patents

Multilayer elements containing photoresist compositions and their use in microlithography Download PDF

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Publication number
WO2002044815A3
WO2002044815A3 PCT/US2001/044295 US0144295W WO0244815A3 WO 2002044815 A3 WO2002044815 A3 WO 2002044815A3 US 0144295 W US0144295 W US 0144295W WO 0244815 A3 WO0244815 A3 WO 0244815A3
Authority
WO
WIPO (PCT)
Prior art keywords
dioxole
perfluoro
dimethyl
photoresist
ethylenically unsaturated
Prior art date
Application number
PCT/US2001/044295
Other languages
French (fr)
Other versions
WO2002044815A2 (en
Inventor
Larry L Berger
Frank L Schadt Iii
Original Assignee
Du Pont
Larry L Berger
Frank L Schadt Iii
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Larry L Berger, Frank L Schadt Iii filed Critical Du Pont
Priority to AU2002239350A priority Critical patent/AU2002239350A1/en
Priority to KR10-2003-7007137A priority patent/KR20040012689A/en
Priority to EP01987101A priority patent/EP1354245A2/en
Priority to US10/398,872 priority patent/US7205086B2/en
Priority to JP2002546918A priority patent/JP2004534961A/en
Publication of WO2002044815A2 publication Critical patent/WO2002044815A2/en
Publication of WO2002044815A3 publication Critical patent/WO2002044815A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Abstract

A photoresist element comprising a substrate; an etch resistant layer; and at least one photoresist layer prepared from a photoresist composition comprising a polymer selected from the group consisting of: (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: -C(Rf)(Rf')OH, wherein Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CX2=CY2 where X = F or CF3 and Y = -H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2=CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; and (B) at least one photoactive component.
PCT/US2001/044295 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography WO2002044815A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AU2002239350A AU2002239350A1 (en) 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography
KR10-2003-7007137A KR20040012689A (en) 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography
EP01987101A EP1354245A2 (en) 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography
US10/398,872 US7205086B2 (en) 2001-11-26 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography
JP2002546918A JP2004534961A (en) 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25382200P 2000-11-29 2000-11-29
US60/253,822 2000-11-29

Publications (2)

Publication Number Publication Date
WO2002044815A2 WO2002044815A2 (en) 2002-06-06
WO2002044815A3 true WO2002044815A3 (en) 2003-08-14

Family

ID=22961841

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/044295 WO2002044815A2 (en) 2000-11-29 2001-11-26 Multilayer elements containing photoresist compositions and their use in microlithography

Country Status (7)

Country Link
EP (1) EP1354245A2 (en)
JP (1) JP2004534961A (en)
KR (1) KR20040012689A (en)
CN (1) CN1486449A (en)
AU (1) AU2002239350A1 (en)
TW (1) TW567404B (en)
WO (1) WO2002044815A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005535780A (en) * 2002-08-09 2005-11-24 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Photoresist, fluoropolymer and method for 157 nm microlithographic printing
JP4610335B2 (en) * 2002-08-09 2011-01-12 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Fluorinated polymers having polycyclic groups with fused 4-membered cyclic carbon useful as photoresists and methods for microlithographic printing
US6830871B2 (en) 2002-08-19 2004-12-14 Fuji Photo Film Co., Ltd. Chemical amplification type resist composition
WO2007101048A2 (en) * 2006-02-24 2007-09-07 Lubrizol Advanced Materials, Inc. Polymerizable silicone copolyol macromers and polymers made therefrom
JP7395278B2 (en) * 2019-07-31 2023-12-11 日東電工株式会社 Photosensitive composition, device, and device manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0473547A1 (en) * 1990-08-27 1992-03-04 Ciba-Geigy Ag Olefinically unsaturated onium salts
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000025178A2 (en) * 1998-10-27 2000-05-04 E.I. Du Pont De Nemours And Company Photoresists and processes for microlithography
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0473547A1 (en) * 1990-08-27 1992-03-04 Ciba-Geigy Ag Olefinically unsaturated onium salts
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000025178A2 (en) * 1998-10-27 2000-05-04 E.I. Du Pont De Nemours And Company Photoresists and processes for microlithography
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography

Also Published As

Publication number Publication date
CN1486449A (en) 2004-03-31
KR20040012689A (en) 2004-02-11
TW567404B (en) 2003-12-21
WO2002044815A2 (en) 2002-06-06
JP2004534961A (en) 2004-11-18
EP1354245A2 (en) 2003-10-22
AU2002239350A1 (en) 2002-06-11

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