TW567404B - Multilayer elements containing photoresist compositions and their use in microlithography - Google Patents
Multilayer elements containing photoresist compositions and their use in microlithography Download PDFInfo
- Publication number
- TW567404B TW567404B TW090129534A TW90129534A TW567404B TW 567404 B TW567404 B TW 567404B TW 090129534 A TW090129534 A TW 090129534A TW 90129534 A TW90129534 A TW 90129534A TW 567404 B TW567404 B TW 567404B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- polymer
- unsaturated compound
- carbon atoms
- atom
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
567404 A7 --—______ Β7 五、發明説明χ - 發明範圍 本發明手1 / U、畲 Μ 41於光成相,且特別是利用光阻劑(正性操作及 、或了丨生^作)以在半導體元件之製造上用於成像。本發明 1有呵UV透明性(特別是在短波長,例如157奈米下) <永合體組合物,其可用於多層元件。 一 發明背景 了予微〜蝕刻為在半導體製造上之方法,其中晶片設計 係被構圖於矽晶圓上❶目前,半導體工業係利用具有來自 W激元雷射之248奈米光波長之工具,以產生具有表面特 徵尺寸低達18〇奈米之晶片。此項技藝之下一技術水平,將 利用來自ArF雷射之193奈米光,且預期光學微影蝕刻會延 伸至表面特徵低達100奈米之晶片。 "雖然一般臆測一些非光學微影蝕刻(X_射線、極端紫外 …i子束等)最後將取代光學微影姓刻,但預期在下個十 年間並典亙即可用之此種技術。因此,在157奈米微影蝕 d上之重要性,已在最近數個月中爆發開來,且目前將其 視為越過光學與非光學蝕刻術間之間隙之關鍵橋樑。使用 來自匕雷射之157奈米光之技術,其發展將會使光學微影蝕 刻之利用,擴大到至少70奈米節點。 使用於微影蝕刻之成像層係為光阻,其對於所採用光線 之波長必須接近透明。對於單層光阻之基本要求條件,亦 包括良好電漿蝕刻抵抗性,高Tg ,與習用含水鹼顯像劑之567404 A7 ---______ Β7 V. Description of the invention χ-Scope of the invention The hand 1 / U, 畲 41 of the present invention is in photophase, and especially uses photoresist (positive operation and / or production) For imaging in the manufacture of semiconductor components. The present invention 1 has UV transparency (especially at a short wavelength, such as 157 nm) < permanent body composition, which can be used for multilayer components. A background of the invention is the micro-etching method for semiconductor manufacturing, in which the wafer design is patterned on a silicon wafer. At present, the semiconductor industry uses a tool with a wavelength of 248 nm from a W excimer laser to Produce wafers with surface features as small as 180 nm. The next level of technology in this technology is to use 193nm light from ArF lasers, and it is expected that the optical lithography etching will extend to wafers with surface features as low as 100nm. " Although it is generally estimated that some non-optical lithographic etching (X-rays, extreme ultraviolet ... i sub-beams, etc.) will eventually replace the lithographic lithographic engraving, it is expected that this technique will be available in the next ten years. Therefore, the importance of 157 nm lithography d has exploded in recent months, and it is currently regarded as a key bridge to bridge the gap between optical and non-optical etching. The development of the technology using 157nm light from the dagger laser will expand the use of optical lithography etching to at least 70nm nodes. The imaging layer used for lithographic etching is a photoresist, which must be nearly transparent to the wavelength of the light used. The basic requirements for single-layer photoresist include good plasma etching resistance, high Tg, and the traditional aqueous alkali developer.
567404 A7567404 A7
相容性,及以有利之顯像/溶解特性成像。或去 々芩,柷蝕刻 性可經由於其上塗覆光阻之基材(有時稱為”硬光罩,,)提 供。此策略係使用於光阻之不透明性阻止其作為厚、單層 光阻使用時。 仍需要適用於157奈米成像之雙層或多層光阻。 發明摘述 在第一方面,本發明係提供一種光阻元件,其包括: (L) 一個基材; (M) —個抗姓刻層;及 (N) 至少一個光阻層,製自一種光阻組合物,其包含: (A)至少一種聚合體,選自包括: (a) 含氟共聚物,其包含衍生自至少一種乙埽系不飽 和化合物之重複單位,其特徵在於至少一種乙缔系不飽 和化合物係為多環狀; (b) 含有經保護酸基之分枝狀聚合體,該聚合體包含 一或多個分枝鏈段,以化學方式沿著線性主鏈段連接; (c) 氟聚合體,具有至少一個具有以下結構之氟醇基:Compatibility, and imaging with favorable development / dissolution characteristics. Or, etchability can be provided by a photoresist-coated substrate (sometimes called a "hard mask,"). This strategy is used for the opacity of photoresist to prevent it from acting as a thick, single layer When a photoresist is used. A double-layer or multi-layer photoresist suitable for 157 nm imaging is still needed. SUMMARY OF THE INVENTION In a first aspect, the present invention provides a photoresist element comprising: (L) a substrate; (M) ) An anti-surname engraving layer; and (N) at least one photoresist layer, made from a photoresist composition, comprising: (A) at least one polymer selected from the group consisting of: (a) a fluorocopolymer, which Comprising repeating units derived from at least one ethylenic unsaturated compound, characterized in that at least one ethylenic unsaturated compound is polycyclic; (b) a branched polymer containing a protected acid group, the polymer Contains one or more branched segments that are chemically connected along a linear main segment; (c) A fluoropolymer having at least one fluoroalcohol group having the following structure:
-C(Rf)(Rf,)〇H 其中Rf與Rf,為1至約10個碳原子之相同或不同氟烷 基,或一起採用為(CF2 )n,其中η為2至10 ; (d) 全氟(2,2-二甲基-1,3-二氧伍圜晞)或cx2 =CY2之非晶 形乙缔基均聚物,其中X = F或CF3,且Y = -Η,或全氟 (2,2-二甲基-1,3-二氧伍圜缔)與CX2=CY2之非晶形乙埽基共 聚物;及 _ -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404 A7 B7 五、發明説明(3 ) (e)含腈/氟基醇之聚合體,製自經取代或未經取代 之乙烯基醚類;及 (B)至少一種光活性成份。典型上,此聚合體在摻合物 中’在157奈米之波長下具有吸收係數低於5.〇微米-1。 於第二方面,本發明係提供製備光阻影像於基材上之方 法,其包括: (X)使光阻元件以影像複製方式曝光,以形成經成像與 未經成像區域,其中光阻元件包括一個基材;一個抗蝕刻 層,及至少一個光阻層,製自一種光阻組合物,其包含: (A) 選自上述⑷_(e)之聚合體及其混合物;及 (B) 光活性成份;及 00使具有經成像與未經成像區域之經曝光光阻層顯 像,以形成浮凸影像在基材上。 發明詳述 此光阻元件包括一個載體、一個抗蝕刻層及至少一個光 阻層,其中光阻層係製自光阻組合物,其包含選自包括⑷ 至(e)之聚合體及其混合物;及光活性成份。 基材 採用於本發明中之基材,說明上而言, . η 』马矽、虱化 矽、虱化矽,或各種其他用於半導體製造上之材料。 抗姓刻增: 抗蝕刻 硬光罩。 層可選自極多種已知材料。此等材料有時被稱為 -些適當材料包括無機材料,譬如氧化矽、氮化-C (Rf) (Rf,) 0H wherein Rf and Rf are the same or different fluoroalkyl groups of 1 to about 10 carbon atoms, or are used together as (CF2) n, where η is 2 to 10; (d ) Perfluoro (2,2-dimethyl-1,3-dioxolane) or amorphous ethylene homopolymer with cx2 = CY2, where X = F or CF3 and Y = -Η, or Amorphous ethenyl copolymer of perfluoro (2,2-dimethyl-1,3-dioxolane) and CX2 = CY2; and _ -6- This paper size applies to China National Standard (CNS) A4 Specification (210X297 mm) 567404 A7 B7 V. Description of the invention (3) (e) Nitrile / fluoroalcohol-containing polymer, made from substituted or unsubstituted vinyl ethers; and (B) at least one kind of light Active ingredient. Typically, this polymer has an absorption coefficient of less than 5.0 microns-1 in the blend 'at a wavelength of 157 nm. In a second aspect, the present invention provides a method for preparing a photoresist image on a substrate, including: (X) exposing the photoresist element in an image copying manner to form an imaged and unimaged area, wherein the photoresist element It includes a substrate, an anti-etching layer, and at least one photoresist layer, and is made from a photoresist composition, comprising: (A) a polymer selected from the above ⑷_ (e) and a mixture thereof; and (B) light Active ingredients; and 00 develops an exposed photoresist layer with imaged and unimaged areas to form a relief image on the substrate. DETAILED DESCRIPTION OF THE INVENTION The photoresistive element includes a carrier, an anti-etching layer and at least one photoresistive layer, wherein the photoresistive layer is made of a photoresist composition and comprises a polymer selected from the group consisting of ⑷ to (e) and a mixture thereof. ; And photoactive ingredients. Substrate The substrate used in the present invention, in terms of description, η ″ horse silicon, lice silicon, lice silicon, or various other materials used in semiconductor manufacturing. Anti-engraving: Anti-etching hard mask. The layer may be selected from a wide variety of known materials. These materials are sometimes referred to-some suitable materials include inorganic materials such as silicon oxide, nitride
567404 五 、發明説明( 4 :虱虱化矽等。此等材料可藉任何習用方式塗敷至基 例如,化學蒸氣沉積(CVD)可用以將抗蝕刻層塗敷至基 材。 光阻層包含聚合體與光活性成份。 -1 裝 此等聚,體可使用於光阻组合物/用於半導體微影蝕 刻。特定言之’因4低於193纟米之低光學吸收係為本發明 =科《首要特質’故其在此波長下應具有特別利用性。此 等聚口 在約157奈米之波長下’不需要但可以具有吸收係 數低於約5.0微米-1,典型上係於此波長丁低於約4〇微米M , 且更典型上,於此波長下係低於約3·5微米 (ΔΙΚ合體: 訂 含氟共聚物(a)包含衍生自至少一種乙埽系不飽和化合物 之重複單位,其特徵在於該至少一種乙埽系不飽和化合物 係為多環狀。共聚物⑷係選自包括: 線 ⑷)含氟共聚物’其包含衍生自至少_種乙晞系不飽和化 合物之重複單位’其特徵在於至少_種乙埽系不飽和化合 物係為多環狀,且至少一種其他乙缔系不飽和化合物含^ 至少-個氟原子’以共價方式連接至乙缔系不飽和^ 子;及 、 (a2)含氟共聚物,其包含衍生自至少一種多環狀乙埽系不 飽和化合物之重複單位,該化合物含有至少一個氣原^、 全氟燒基及全氟:fe氧基,其係以共價方式連接至碳原子 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404567404 V. Description of the invention (4: Lice silicon, etc. These materials can be applied to the substrate by any conventional method. For example, chemical vapor deposition (CVD) can be used to apply an anti-etching layer to a substrate. The photoresist layer contains Polymers and photoactive components. -1 With these polymers, the body can be used in photoresist compositions / for semiconductor lithographic etching. In particular, 'because of the low optical absorption system of less than 193 mm, the present invention = The "principal trait" should be particularly useful at this wavelength. These condensers are not required at a wavelength of about 157 nm but may have an absorption coefficient of less than about 5.0 microns-1, which is typically here The wavelength D is less than about 40 micrometers M, and more typically, at this wavelength is less than about 3.5 micrometers (ΔΙΚ complex: the fluorinated copolymer (a) contains at least one ethylenic unsaturated compound The repeating unit is characterized in that the at least one ethylenic unsaturated compound is polycyclic. The copolymer is selected from the group consisting of: ⑷) fluorinated copolymers, which include at least one ethylenic unsaturated Compound repeating unit 'is characterized by at least _ species Actinic unsaturated compounds are polycyclic, and at least one other ethylenically unsaturated compound contains ^ at least-one fluorine atom 'covalently attached to the ethylenically unsaturated compound; and, (a2) fluorine-containing Copolymer comprising repeating units derived from at least one polycyclic acetamidine unsaturated compound, the compound containing at least one gasogen, a perfluoroalkyl group, and a perfluoro: feoxy group, which are covalently linked To carbon atom -8-This paper size applies to China National Standard (CNS) A4 (210X297 mm) 567404
此竣原子被包本在p 各乙烯系不飽S殘^結構内’並與乙缔系不飽和化合物之 原子分隔。 灭^、予藉由至少一個以共價方式連接之碳 揭示於(al)中之至 ^ . 種乙烯系不飽和化合物,可選自包 -9 - 本紙張尺度適财國國家標準(cns) A4規格(2ig x 297公爱)The completed atom is enclosed in each ethylene-based unsaturated S ′ structure and is separated from the atom of the ethylenically unsaturated compound. Exterminate ^, Yu through at least one covalently linked carbon revealed in (al) to ^. A type of ethylenically unsaturated compounds, can be selected from the package-9-This paper is a national standard (cns) A4 size (2ig x 297 public love)
567404 五、發明説明(6 各為°、1或2,p為至少3之整數; a與b係獨立為1至3 ,惟本 土 J准田b = 2時,&不=1,或反之亦然; 土 R均為相同或不同’且各表示氯原子、商原子,含 1至14個碳原子’典型上為1至10個碳原子之烴基,視情 況被至少:個〇、N、s、P或由原子取代,例如致基,; 如一級或二級烷基羧酸基或羧酸酯基,· R1)為約4至20個碳原子之飽和烷基,視情況含有一或多 固鍵氧’纟附帶條件是碳原子對氫原子之 於 0·58 ; ^ R 6至R21各獨立為氫原子,CjC 口燒基,㈣qC〇2A , =(CH2)qCO2A4CO2A,其中qAa12,且a為氫或酸保 乂基,其附帶條件是Rl8至r21中至少一個為%a。 本發明共^(及包含此等共聚物之光阻)之_項關鍵特 J ’係為多環狀重複單位與相同或不同之含氟重複單位, 及再者與在共聚物中不含芳族官能基之所有重複單位之協 力組合。為使共聚物對電漿蝕刻(例如反應性離子蝕刻)且 有高抵抗性,則多環狀重複單位存在於共聚物中是很重要 的。多%狀重複單位亦傾向於提供高玻璃轉移溫度,這對 ^持光阻薄膜上之尺寸安定性是很重要的。為使共聚物 ^向光學透明性,意即在極端及遠UV中具有低光學吸 合則含氟重複單位之存在是很重要的。為使聚合體具有 向光學透明性,亦需要在共聚物之重複單位中不存在芳族 官能基。 在本發明之某些具體實施例中,含氟共聚物可包含衍生 裝 訂567404 V. Description of the invention (6 is °, 1 or 2 each, p is an integer of at least 3; a and b are independently 1 to 3, but when the native J Juntian b = 2, & not = 1, or vice versa The same is true; the soil Rs are all the same or different, and each represents a chlorine atom, a quotient atom, and a hydrocarbon group containing 1 to 14 carbon atoms, typically 1 to 10 carbon atoms, as the case may be, at least: 0, N, s, P or substituted by an atom, such as a radical; such as a primary or secondary alkyl carboxylic acid group or a carboxylic acid ester group, R1) is a saturated alkyl group of about 4 to 20 carbon atoms, optionally containing one or The multi-solid-bonded oxygen '纟 condition is that carbon atom to hydrogen atom is 0.58; ^ R 6 to R 21 are each independently a hydrogen atom, a CjC alkyl group, ㈣qC〇2A, = (CH2) qCO2A4CO2A, where qAa12, and a is hydrogen or an acid sulfonyl group, with the proviso that at least one of R18 to r21 is% a. The key feature of the present invention (and the photoresist containing these copolymers) is the polycyclic repeating unit and the same or different fluorine-containing repeating unit, and further, the aromatic copolymer is not contained in the copolymer. A synergistic combination of all repeating units of a group functional group. For the copolymer to be highly resistant to plasma etching (such as reactive ion etching), it is important that polycyclic repeating units are present in the copolymer. Many percent repeat units also tend to provide high glass transition temperatures, which is important for dimensional stability on photoresist films. For the copolymer to be optically transparent, meaning low optical absorption in extreme and extreme UV, the presence of repeating units containing fluorine is important. In order for the polymer to be optically transparent, it is also required that aromatic functional groups are not present in the repeating units of the copolymer. In certain embodiments of the present invention, the fluorocopolymer may include derivative binding
567404 A7 B7567404 A7 B7
自土少一種多環狀乙缔系不飽和化合物之重複單位,該化 合物具有至少一個原子或基團,選自包括氟原子、全氟烷 基及全氟烷氧基,以共價方式連接至被包含在環結構内之 碳原子。氟原子、全氟烷基及全氟烷氧基,當此種基團直 接連接至乙婦系不飽和碳原子時,其傾向於抑制環狀乙缔 系不飽和化合物藉由金屬催化加成聚合或複分解聚合之聚 合反應。因此,在此種情況中重要的是,該至少一個氟原 子、全氟基及全氟燒氧基,係與乙埽系不飽和化合物之 各乙烯系不飽和碳原子,被至少一個以共價方式連接之碳 原子分隔。再者,使此原子及/或基團直接連接至環,會 使不想要之未經氟化脂族碳原子之存在降至最低。 本發明共t物令人駕時地具有平衡性質,這對於賦予半 導體應用之光阻組合物之必要性質,是很重要的。首先, 於極端及遠UV中,包括193奈米與157奈米波長,此等共聚 物具有令人意外地低之光學吸收。使共聚物具有低光學吸 收,對於調配高光速度光阻是很重要的,其中大部份量之 UV光係被光活性成份吸收,且不會由於被共聚物(光阻之 基質)吸收而損失。其次,包含本發明含氟聚合體之光阻, 係令人滿思地顯示極低電漿姓刻速率。此後述性質在獲得 半導中所需要之向解杆精密度光阻上,是很重要 的。同時達成此等性質之適當值,對於在157奈米下成像, 是特別重要的。於此情況中,需要超薄光阻,以提供高解 析度,但此等薄光阻必須是高度蝕刻抵抗性,以致使光阻 留在已成像之基材上,並在蝕刻期間保護其下方基材之區 ___ -11- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐)A repeating unit of a polycyclic ethylenically unsaturated compound that has at least one atom or group selected from the group consisting of a fluorine atom, a perfluoroalkyl group, and a perfluoroalkoxy group, covalently attached to A carbon atom contained in a ring structure. Fluorine atom, perfluoroalkyl group, and perfluoroalkoxy group. When such a group is directly connected to the ethylenic unsaturated carbon atom, it tends to inhibit the cyclic ethylenic unsaturated compound from metal-catalyzed addition polymerization. Or the polymerization of metathesis polymerization. Therefore, it is important in this case that the at least one fluorine atom, perfluoro group, and perfluoroalkoxy group are each an ethylenically unsaturated carbon atom of the ethylenic unsaturated compound with at least one covalently Carbon atoms separated by way of connection. Furthermore, having this atom and / or group directly attached to the ring minimizes the presence of unwanted unfluorinated aliphatic carbon atoms. The co-products of the present invention are surprisingly balanced in nature, which is important for imparting the necessary properties of photoresist compositions for semiconductor applications. First, these copolymers have surprisingly low optical absorption in extreme and extreme UV, including 193 nm and 157 nm wavelengths. Making the copolymer with low optical absorption is very important for the deployment of high light speed photoresist. Most of the UV light is absorbed by the photoactive component and will not be lost due to the absorption by the copolymer (the matrix of the photoresist). . Secondly, the photoresist containing the fluorine-containing polymer of the present invention shows an extremely low plasma engraving rate. The properties described below are important in obtaining the precision photoresistance of the directional rod required in the semiconductor. Achieving appropriate values for these properties at the same time is particularly important for imaging at 157 nm. In this case, an ultra-thin photoresist is required to provide high resolution, but these thin photoresists must be highly etch resistant so that the photoresist remains on the imaged substrate and protects the area of the underlying substrate during etching ___ -11- This paper size applies to China National Standard (CNS) A4 (210X297 mm)
裝 訂Binding
567404 A7 B7 五、發明説明(8 ) 域。 在本發明之較佳具體實施例中,此光阻組合物包含共聚 物,其包含衍生自至少一種多環狀共單體(意即,包含至少 兩個環之共單體,例如正宿烯)之重複單位。這是重要的, 有三個主要理由:1)多環狀單體具有相對較高碳對氫比例 (C : H),其會造成由此等多環狀單體之重複單位所組成之 基料聚合體,一般性地具有良好電漿蝕刻抵抗性;2)具有 衍生自多環狀單體之重複單位之聚合體,其較佳可在聚合 時經完全飽和,其通常具有良好透明特性;及3)製自多環 狀單體之聚合體經常具有相對較高玻璃轉移溫度,以提供 加工處理期間之經改良尺寸安定性。乙烯系不飽和基團可 被包含在多環狀部份基團内,如在正宿烯中,或可懸垂至 多環狀部份基團,如在1-金剛烷羧酸乙晞酯中。包含衍生 自多環狀共單體之重複單位,具有高C: Η比例之聚合體, 具有相對較低Ohnishi值(Ο.Ν.),其中: O.N.=N/(Nc -N0) 其中N為在聚合體重複單位中之原子數,Ne為在聚合體重 複單位中之碳原子數,及N。為在聚合體重複單位中之氧原 子數。有一個由Ohnishi等人所發現之經驗法則(J. Electrochem. Soc·,Solid-State Sci· Technol·,130, 143 (1983)),其陳述聚合體之反 應性離.子蝕刻(RIE)速率係為Ohnishi值(O.N.)之線性函數。以 下述作為一項實例,聚(正福烯)具有化學式為聚(C7Hi 〇)且 O.N. = 17/7 = 2.42。主要由碳與氫所組成,具有多環狀部份基 團及相對極少含氧官能基之聚合體,具有相對較低O.N., -12- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)567404 A7 B7 V. Description of the Invention (8) Domain. In a preferred embodiment of the present invention, the photoresist composition comprises a copolymer comprising a comonomer derived from at least one polycyclic comonomer (meaning, a comonomer comprising at least two rings, such as n ) Of the repeating unit. This is important for three main reasons: 1) Polycyclic monomers have a relatively high carbon-to-hydrogen ratio (C: H), which can cause a base material consisting of repeating units of such polycyclic monomers Polymers, generally having good resistance to plasma etching; 2) Polymers having repeating units derived from polycyclic monomers, which are preferably fully saturated during polymerization, and generally have good transparency characteristics; and 3) Polymers made from polycyclic monomers often have relatively high glass transition temperatures to provide improved dimensional stability during processing. The ethylenically unsaturated group may be contained in a polycyclic partial group, such as in n-sulene, or may be pendant to a polycyclic partial group, such as in 1-adamantanecarboxylic acid ethylammonium ester. Contains repeating units derived from polycyclic comonomers, a polymer with a high C: Η ratio and a relatively low Ohnishi value (O.N.), where: ON = N / (Nc -N0) where N is The number of atoms in the polymer repeating unit, Ne is the number of carbon atoms in the polymer repeating unit, and N. Is the number of oxygen atoms in the polymer repeat unit. There is a rule of thumb discovered by Ohnishi et al. (J. Electrochem. Soc ·, Solid-State Sci · Technol ·, 130, 143 (1983)), which states the reactive ion ionization (RIE) rate of polymers It is a linear function of Ohnishi value (ON). Taking the following as an example, poly (n-furene) has a chemical formula of poly (C7Hi 0) and O.N. = 17/7 = 2.42. It is mainly composed of carbon and hydrogen, a polymer with polycyclic partial groups and relatively few oxygen-containing functional groups, and has a relatively low ON. -12- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm)
裝 訂Binding
線 567404 發明説明(9 且根據Ohnishi之經驗法則,具有相當低(在近似線性方式 中)RIE速率。 、正如熟諳聚合體技藝者所習知,乙埽系不飽和化合物係 進仃自由基聚合反應,而得具有衍生自乙烯系不飽和化合 物又重複早位之聚合體。明確言之,進行自由基聚合反應 之具有以下結構之乙缔系不飽和化合物:Line 567404 Invention Description (9 and according to Ohnishi's rule of thumb, it has a fairly low (in an approximately linear manner) RIE rate. As is well known to those skilled in the art of polymer polymerization, ethylenically unsaturated compounds are involved in radical polymerization. And obtain a polymer derived from an ethylenically unsaturated compound and repeating an early position. Specifically, an ethylenically unsaturated compound having the following structure undergoing a radical polymerization reaction:
c=c / \ S τ 係獲得具有以下重複單位之聚合體··c = c / \ S τ is a polymer with the following repeating units ...
裝 訂 其中P、Q、S及T可獨立表示但不限於H、F、c丨、Br,含 有1至14個碳原子之烷基,含有6至14個碳原子之芳基、芳 烷基,或含有3至14個碳原子之環烷基。Binding where P, Q, S and T can be independently represented but not limited to H, F, c 丨, Br, alkyl groups containing 1 to 14 carbon atoms, aryl groups containing 6 to 14 carbon atoms, aralkyl groups, Or a cycloalkyl group containing 3 to 14 carbon atoms.
線 、若只有-種乙晞系不飽和化合物進行聚合反應,則所开」 成之聚合體為均聚物。若兩種或多種不同乙烯系不飽和价 合物進行聚合反應,則所形成之聚合體為共聚物。 乙烯系不飽和化合物及其相應重複單位之一些代表性节 例,係示於下文: ~ ^If only one kind of ethylidene-based unsaturated compound is polymerized, the polymer formed is a homopolymer. If two or more different ethylenically unsaturated valences are polymerized, the polymer formed is a copolymer. Some representative examples of ethylenically unsaturated compounds and their corresponding repeating units are shown below: ~ ^
F " F \ / C=C / \F " F \ / C = C / \
F F -13- 567404 發明説明 Η \c=c / Η Η Η Η \ / 、Cf 〇F F -13- 567404 Description of the invention Η \ c = c / Η Η Η Η \ /, Cf 〇
CH, 、ch3 >在下又段落中,本發明之光阻組合物係以其成份部份 觀點進行描述β ”’ 本發明之光阻包含一種含氟共聚物,其包含衍生自至少 一種=婦系不飽和化合物之重複單位,其特徵在於至少一 種乙埽系不飽和化合物為多環狀,且至少一種乙烯系不飽 和化合物含有至少一個氟原[以共價方式連接至乙埽系 不飽和碳原子。適㈣本發明含氟共聚物之代表性乙埽系 飽和化合物’包括但不限於四氟乙晞、氯三氟乙埽、二 氟丙烯、三氟乙少希、二氟亞乙晞、氟乙缔、全氟-(2,2-二甲 基-1,3—二氧伍圜烯)、全氟-(2-亞甲基-4-甲基-ΐ,3_二氧伍圜)、 CF2=CF〇(CF2)tCF=CF2,其中 ^ 】或 2,及Rf〇CF=cF2,其中 & 為1至約1G個碳原子之飽和氟燒基。本發明之含氟共聚^ 可包含任何整數之其他含氟共單體’纟包括但不限於前文 所列示者。較佳共單體為四氟乙烯、氣三氟乙,希' 六氟丙 缔、三氟乙晞及Rf0CF=CF2,其巾Rf4l至約1〇個碳原子之 飽和氟燒基。更佳共單體為四I乙埽、氯三氟乙缔、六氣 丙烯及?ocfcf2 ’其tRf4l至約10個碳原子之飽和全氟 烷基。最佳共單體為四氟乙烯與氯三氟乙缔。 具有結構Η之代表性共單體,包括但不限於:CH,, ch3 > In the next and subsequent paragraphs, the photoresist composition of the present invention is described in terms of its component part β "" "The photoresist of the present invention includes a fluorinated copolymer which includes a derivative derived from at least one = Is a repeating unit of unsaturated compound, characterized in that at least one ethylenic unsaturated compound is polycyclic, and at least one ethylenic unsaturated compound contains at least one fluorogen [covalently connected to ethylenic unsaturated carbon Atoms. Representative ethylenic saturated compounds that are suitable for the fluorinated copolymers of the present invention include, but are not limited to, tetrafluoroacetamidine, chlorotrifluoroacetamidine, difluoropropene, trifluoroethanesox, difluoroethyleneamidine, Fluoroethylene, perfluoro- (2,2-dimethyl-1,3-dioxolene), perfluoro- (2-methylene-4-methyl-fluorene, 3_dioxolane ), CF2 = CF〇 (CF2) tCF = CF2, where ^] or 2, and Rf〇CF = cF2, where & is a saturated fluorocarbon group having 1 to about 1G carbon atoms. The fluorine-containing copolymerization of the present invention ^ Other fluorinated comonomers that may include any integer include, but are not limited to, those listed above. Preferred comonomers are tetrafluoroethylene, trifluorofluoride Hexafluorohexafluoride, trifluoroacetamidine, and Rf0CF = CF2, which are Rf4l to about 10 carbon atoms of saturated fluorocarbon. More preferred comonomers are tetramethylacetonium, chlorotrifluoroethylene, Hexapropene and? Ocfcf2 'saturated perfluoroalkyl with tRf4l to about 10 carbon atoms. The best comonomers are tetrafluoroethylene and chlorotrifluoroethylene. Representative comonomers with the structure Η include but not limited to:
訂Order
-14--14-
567404 A7 B7 五、 發明説明(11 )567404 A7 B7 V. Description of the invention (11)
具有結構I之代表性共單體,包括但不限於:Representative comonomers with structure I, including but not limited to:
具有結構L之代表性共單體,包括但不限於: -15-本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 567404 A7Representative comonomers with structure L, including but not limited to: -15- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 567404 A7
具有結構Μ之代表性共單體,包括但不限於:Representative comonomers with structure M, including but not limited to:
包含具有結構K、L及Μ共單體之所有本發明共聚物,其 特徵為包含氟化烯烴與式CH2=CH〇2CR22之乙烯基醋類,或 式CH2=CHOCH2R22或CH2=CHOR22之乙埽基醚類,其中R22為 約4至20個碳原子之烴基,其中c : Η比例相對較高,且其 係大於0.58,因為南C : Η比例相當於良好電漿姓刻抵抗性 (這與包含氟化晞fe及式CH2 =CH〇2 CR2 3之乙缔基醋類,或 式CH2 =CHOCH2 R2 3或CH2 =CHOR2 3之乙烯基謎類之共聚物大 不相同,其中R23具有C ·· Η比例相對較低,且低於〇.58。 R22與R23係選自烷基、芳基、芳烷基及環烷基。) 具有結構Ν之代表性共單體,包括但不限於:All copolymers according to the invention comprising comonomers having the structures K, L and M are characterized by fluorinated olefins and vinyl vinegars of the formula CH2 = CH02CR22, or ethyl acetate of the formula CH2 = CHOCH2R22 or CH2 = CHOR22 Ethers, in which R22 is a hydrocarbon group of about 4 to 20 carbon atoms, where the ratio of c: Η is relatively high, and its ratio is greater than 0.58, because the ratio of South C: Η is equivalent to good plasma resistance (this is related to Copolymers containing fluorinated fluorene and ethylenic esters of the formula CH2 = CH〇2 CR2 3, or vinyl mysteries of the formula CH2 = CHOCH2 R2 3 or CH2 = CHOR2 3, where R23 has C · · The ratio of plutonium is relatively low and less than 0.58. R22 and R23 are selected from the group consisting of alkyl, aryl, aralkyl, and cycloalkyl.) Representative comonomers having structure N, including but not limited to:
其中 A = H,(CH3)3C,(CH3)3Si。 -16- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404 A7 B7 發明説明 13 在上述較佳具體實施例中,具有至少一種結構H-N之不飽 和化η物作為第二種列舉之共單體,若(且唯若)含氟共聚 物不包含其他具有選自羧酸與保護酸基官能基之共單體 時則對於第二種共單體有限制。於此情況中,該含氟共 聚物僅僅具有兩種共單體(兩種所列舉之共單體,而未具有 其他未列舉之共單體)^於此情況中,必須有足夠官能基 度八係選自羧酸與保護酸基,存在於該至少一種不飽和 化合物(意即第二種所列舉之共單體)中,以致由含氟聚合 物所組成之本發明光阻,可在影像複製曝光時顯像,如更 詳細地於下文所解釋者。在使用僅僅具有兩種共單體之含 氟共聚物之此等具體實施例中,此兩種共單體在共聚物中 之莫耳百分比,個別對氟基單體(第一種所列舉之單體)與 第一種共單體,其範圍可從90%,10%至1〇%,90%。典型 上,此兩種共單體莫耳百分比,個別對氟基單體(第一種所 列舉《單體)與第二種共單體,係從嶋,纖至碟,⑽之 範圍内。 對些具m貫施例而言,除了該兩種所列舉之共單體(意 即,(1)至少一種乙埽系不飽和化合物,含有至少一個氟原 子,以共饧方式連接至乙烯系不飽和碳原子;與⑻至少— 種不飽和化合物’選自結構H_N之族群)之外,本發明之各 氟共聚物可包含㈣整數而無限制之其他共單|^代表 之其他共單體可包括但不限於丙㈣、甲基㈣酸、丙缔 酸第三-丁酉旨、甲基丙婦酸第三· 丁酉旨、丙烯酸第三_戊醋、 甲基丙烯酸第三-戊酯、丙烯酸異丁酯、甲基丙晞酸異丁Where A = H, (CH3) 3C, (CH3) 3Si. -16- This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 567404 A7 B7 Description of invention 13 In the above-mentioned preferred embodiment, the unsaturated η having at least one structure HN is used as the second type The listed comonomers are limited to the second comonomer if (and only if) the fluorinated copolymer does not contain other comonomers having a functional group selected from a carboxylic acid and a protective acid group. In this case, the fluorinated copolymer has only two comonomers (the two listed comonomers and no other unlisted comonomers) ^ In this case, there must be sufficient functionality The eight series are selected from carboxylic acids and protective acid groups, and are present in the at least one unsaturated compound (meaning the second listed comonomer), so that the photoresist of the present invention composed of a fluoropolymer can be used in The image is reproduced upon exposure, as explained in more detail below. In these specific examples using a fluorinated copolymer having only two comonomers, the mole percentages of the two comonomers in the copolymer are individually determined for the fluorine-based monomer (the first listed Monomer) and the first comonomer, which can range from 90%, 10% to 10%, 90%. Typically, these two comonomers have a mole percentage, and the individual fluoro-based monomers (the first listed monomer) and the second comonomer range from rhenium, fiber to dish, and rhenium. For some examples, in addition to the two listed comonomers (that is, (1) at least one ethylidene unsaturated compound, containing at least one fluorine atom, is conjugated to the ethylene system Unsaturated carbon atoms; with at least one unsaturated compound 'selected from the group of structures H_N), each of the fluorocopolymers of the present invention may contain an integer of ㈣ and no other co-monomers represented by ^ May include, but are not limited to, propionate, methyl acetic acid, tertiary butyl methacrylate, tertiary butyl methacrylate, tertiary butyl methacrylate, tertiary pentyl methacrylate, acrylic acid Isobutyl ester, isobutyl methylpropionate
裝 訂Binding
-17· 567404 A7 B7 五、發明説明(14 ) 酯 乙 烯、醋酸乙晞酯、分解烏頭酸及乙晞 醇。 在其 中 含 氟共聚物具有兩種所列舉共單體,且包含三 種或 更 多 種 共 單 體 之 具體實施例中,第二種所列舉之共單體(意 即 (ii)至 少 一 種 不飽和化合物,選自結構H-N之族群)之 莫 耳 百 分 比 其範圍為約20莫耳%至約80莫耳%,較佳範 圍 為 約 30 莫 耳 % 至約70莫耳%,更佳範圍為約40莫耳 %至 約 70 莫 耳 % 而 又最佳係為約50至約70莫耳%。構成 此共 聚物 之 所 有 其 他 共單體之莫耳百分比之總和,係表示 餘額 在將其 加 入 第 二種所列舉共單體之莫耳百分比時, 合計 為 100% 〇 除 了 第 二種所列舉共單體之外,存在於共聚 物中 之 所 有 其 他 共 單 體之莫耳百分比之總和,廣義言之, 係在 約 80 莫 耳 % 至 約 20莫耳%之範圍内。所有其他共單體 之莫 耳 百 分 比 總 和 較佳係在約70莫耳%至約30莫耳%之 範圍 内 〇 所有 其 他 共 單體之莫耳百分比總和,更佳係在約 60莫 耳 % 至 約 30 莫 耳 %之範圍内,且又更佳情況是,所有 其他 共 單 體 之 莫 耳 百 分比總和,係在約50莫耳%至約30 . 莫耳 % 之 範 圍 内 〇 當 此含氟聚合物為三聚物時,氟基單體(第一 種 所 列 舉 之 單 體 )對其他共單體之適當比例,概括言之 ,其範 圍 可從 5 : 95至95 : 5。當此含氟共聚物以可顯像能 力所 必 須 之 足 量 含 有 其他具有酸基團或經保蔓酸基官能基 之共 單 體 時 該 官 能 基可存在或不存在於第二種所列舉共 單體 中 1 而 無 限 制 〇 本發 明光阻組合物之一種特定含氣共聚物 ,其 包 含衍 生 白 共 單 體之重複單位,此共單體具有至少一 個氟原 子 連 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐) 567404 A7 __B7 五、發明説明(15 ) 接至乙晞系不飽和碳原子,該共聚物可藉自由基聚合反應 製成。聚合體可藉由熟諳此藝者已知之總體、溶液、懸浮 或乳化聚合技術,使用自由基引發劑,譬如偶氮化合物或 過氧化物製成。 本發明光阻組合物之一種特定含氟共聚物,其僅含有衍 生自所有環狀共單體之重複單位,且完全缺乏衍生自具有 一或多個氟原子而經連接至乙稀·系不飽和碳原子之共單體 之重複單位,該共聚物亦可藉自由基聚合反應製成,但另 外,可藉其他聚合方法製成,包括乙烯基加成聚合與開環 複分解聚合反應(ROMP)。兩種後述聚合方法均為熟諳此藝 者所已知。使用鎳與鈀觸媒之乙烯基加成聚合,係揭示於 下列參考資料中:1) Okoroanyanwu U. ; Shimokawa,T.; Byers, J. D. ϊ Willson, C. G. J. Mol. Catal. A · Chemical 1998, 133, 93 » 2) PCT WO 97/33198 (9/12/97)歸屬於 B.F· Goodrich ; 3) Reinmuth,A.; Mathew, J. P. ; Melia, J. ;-17 · 567404 A7 B7 V. Description of the invention (14) Ester ethylene, ethyl acetate, decomposition of aconitic acid and acetic alcohol. In a specific embodiment in which the fluorinated copolymer has two listed comonomers and contains three or more comonomers, the second listed comonomer (meaning (ii) at least one unsaturated The compound, selected from the group of structures HN), has a mole percentage ranging from about 20 mole% to about 80 mole%, preferably from about 30 mole% to about 70 mole%, and more preferably about 40 Molar% to about 70 Molar% and most preferably about 50 to about 70 Molar%. The sum of the mole percentages of all other comonomers that make up this copolymer means that the balance adds up to 100% when added to the mole percentage of the second listed comonomer. Except for the second listed total The sum of the mole percentages of all other co-monomers present in the copolymer, other than the monomers, is in the broad range of about 80 mole% to about 20 mole%. The sum of the mole percentages of all other comonomers is preferably in the range of about 70 mole% to about 30 mole%. The sum of the mole percentages of all other comonomers is more preferably about 60 mole% to In the range of about 30 mole%, and more preferably, the sum of the mole percentages of all other comonomers is in the range of about 50 mole% to about 30. mole%. When the compound is a trimer, the appropriate ratio of the fluorine-based monomer (the first listed monomer) to the other comonomers can be summarized, which can range from 5:95 to 95: 5. When this fluorinated copolymer contains other comonomers having an acid group or a fumaric acid functional group in a sufficient amount necessary for developability, the functional group may or may not be present in the second listed co-monomer. One of the monomers is not limited. A specific gas-containing copolymer of the photoresist composition of the present invention includes a repeating unit derived from a white co-monomer having at least one fluorine atom. China National Standard (CNS) A4 specification (210 x 297 mm) 567404 A7 __B7 V. Description of the invention (15) Connected to ethylenic unsaturated carbon atom, the copolymer can be made by free radical polymerization. Polymers can be made by using bulk, solution, suspension, or emulsion polymerization techniques known to those skilled in the art, using free radical initiators such as azo compounds or peroxides. A specific fluorinated copolymer of the photoresist composition of the present invention, which contains only repeating units derived from all cyclic comonomers, and is completely lacking derived from having one or more fluorine atoms and connected to ethylene. The repeating unit of a comonomer of saturated carbon atoms. The copolymer can also be made by free radical polymerization, but in addition, it can be made by other polymerization methods, including vinyl addition polymerization and ring-opening metathesis polymerization (ROMP). . Two polymerization methods described later are known to those skilled in the art. Vinyl addition polymerization using nickel and palladium catalysts is disclosed in the following references: 1) Okoroanyanwu U .; Shimokawa, T .; Byers, JD ϊ Willson, CGJ Mol. Catal. A · Chemical 1998, 133, 93 »2) PCT WO 97/33198 (9/12/97) belongs to BF Goodrich; 3) Reinmuth, A .; Mathew, JP; Melia, J .;
Risse,W· Macromol· Rapid Commun. 1996, 17, 173 ;及 4) Breimig,S·; Risse,W· Makromol· Chem. 1992, 193, 2915。開環複分解聚合反應 係揭示於前文所述參考資料1)與2)中,使用釕與銥觸媒; 以及在 5) Schwab,P. ; Grubbs, R. Η. ; Ziller, J. W. J. Am. Chem· Soc· 1996, 118, 100 ;及 6)JSchwab,P. ; France, Μ. B.;Risse, W. Macromol. Rapid Commun. 1996, 17, 173; and 4) Breimig, S .; Risse, W. Makromol. Chem. 1992, 193, 2915. The ring-opening metathesis polymerization system is disclosed in the references 1) and 2) described above, using ruthenium and iridium catalysts; and 5) Schwab, P .; Grubbs, R. Η .; Ziller, JWJ Am. Chem · Soc. 1996, 118, 100; and 6) J Schwab, P .; France, M.B .;
Ziller,J. W. ; Grubbs,R· H· Angew. Chem· Int· Ed· Engl· 1995, 34, 2039 中〇 本發明光阻組合物之一些含氟二聚物,其中二聚物含有 氟基單體(例如TFE)與環狀烯烴(例如正莅晞),其顯示係為 __ -19- 本紙張尺度適用中國國家襟準(CNS) A4規格(210X297公釐) 567404 A7 B7 五、 發明説明(16 ) 交替或約略交替之二聚物,其具有但不限於下文所示之結 構··Ziller, JW; Grubbs, R. H. Angew. Chem. Int. Ed. Engl. 1995, 34, 2039. Some of the fluorine-containing dimers of the photoresist composition of the present invention, wherein the dimers contain fluorine-based monomers (Such as TFE) and cyclic olefins (such as Zhengfang), the display is __ -19- This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) 567404 A7 B7 V. Description of the invention ( 16) Alternating or approximately alternating dimers, having but not limited to the structure shown below ...
在此種情況中,本發明係包括此等交替或約略交替之共 聚物,但不以任何方式僅僅受限於交替共聚物結構。 此等聚合體係描述於2000年3月20日公告之WO 00/17712中。 聚合體(b)為含有經保護酸基之分枝狀聚合體,該聚合體 包含一或多個分枝鏈段,以化學方式沿著線性主鏈段連 接。此分枝狀聚合體可在至少一種乙烯系不飽和巨體成份 與至少一種乙烯系不飽和共單體之自由基加成聚合期間形 成。此乙烯系不飽和巨體成份具有數目平均分子量(Mn)介 於數百與40,000之間,且由聚合反應所形成之線性主鏈段, 具有數目平均分子量(Mn)介於約2,000與約500,000之間。線 性主鏈段對分枝鏈段之重量比,係在約50/1至約1/10之範圍 内,且較佳係在約80/20至約60/40之範圍内。典型上,該巨 體成份具有數目平均分子量(Mn)為500至約40,000,且更典型 上為約1,000至約15,000。典型上,此種乙烯系不飽和巨體成 份,可具有數目平均分子量(Mft4,相當於有約2至約500個 單體單位,用以形成巨體成份,且典型上在30與200個單體 單位之間。 在一典型具體實施例中,分枝狀聚合體含有25%至100% 重量比之促相容基團,意即此等官能基之存在係為增加與 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 567404 A7 B7 五、發明説明(17 ) 光酸發生劑之相容性,較佳為約50%至100%重量比,且更 佳為約75%至100%重量比。供離子性光酸發生劑用之適當 促相容基團,包括但不限於非親水性極性基團與親水性極 性基團。適當非親水性極性基團包括但不限於氰基(-CN)與 硝基(-N02)。適當親水性極性基團包括但不限於質子性基 團,譬如羥基(OH)、胺基(NH2)、銨、醯胺基、醯亞胺基、 胺基甲酸酯、脲基或巯基;或羧酸(C02H)、磺酸、亞磺 酸、磷酸或其鹽。促相容基團較佳係存在於分枝鏈段中。 典型上,經保護酸基(下文所述)在曝露於UV或其他光化 輻射,及接著曝光後烘烤(意即在去保護作用期間)之後, 會產生羧酸基。存在於本發明光敏性組合物中之分枝狀聚 合體,典型上係含有介於約3%至約40%重量比之含有經保 護酸基之單體單位,較佳係在約5%至約50%之間,且更佳 係在約5%至約20%之間。此種較佳分枝狀聚合體之分枝鏈 段,典型上含有所存在經保護酸基之35%至100%之間。此 種分枝狀聚合體,當完全未經保護時(所有經保護酸基均被 轉化成自由態酸基),具有酸價在約20與約500之間,較佳 係在約30與約330之間,且更佳係在約30與約130之間,而 同樣地,乙烯系不飽和巨體成份較佳係具有酸價約20與約 650之間,更佳係在約90與約^之間,而大部份自由態酸 基係在分枝鏈段中。 本發明此方面之各光敏性組合物,含有一種分枝狀聚合 體,亦稱為梳型聚合體,其含有經保護之酸基。此分枝狀 聚合體具有分枝鏈段,稱為聚合體臂,相對於線性主鏈 -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)In this case, the present invention includes such alternating or approximately alternating copolymers, but is not limited in any way to only alternating copolymer structures. Such polymerization systems are described in WO 00/17712 published on March 20, 2000. The polymer (b) is a branched polymer containing a protected acid group, the polymer comprising one or more branched segments, which are chemically connected along a linear main segment. This branched polymer can be formed during radical addition polymerization of at least one ethylenically unsaturated macromonomer component and at least one ethylenically unsaturated comonomer. This ethylene-based unsaturated macromolecule has a number average molecular weight (Mn) between hundreds and 40,000, and a linear main chain segment formed by a polymerization reaction, and has a number average molecular weight (Mn) between about 2,000 and about 500,000. between. The weight ratio of the linear main chain segment to the branched chain segment is in a range of about 50/1 to about 1/10, and preferably in a range of about 80/20 to about 60/40. Typically, the macrocomponent has a number average molecular weight (Mn) of 500 to about 40,000, and more typically about 1,000 to about 15,000. Typically, such ethylenically unsaturated macromonomers can have a number average molecular weight (Mft4, which is equivalent to about 2 to about 500 monomer units, used to form macromonomers, and typically between 30 and 200 monomers In a typical embodiment, the branched polymer contains 25% to 100% by weight of a compatibility-promoting group, which means that the presence of these functional groups is to increase the Standards apply to Chinese National Standard (CNS) A4 specifications (210X 297 mm) 567404 A7 B7 V. Description of the invention (17) Compatibility of photoacid generator, preferably about 50% to 100% by weight, and better About 75% to 100% by weight. Suitable compatibilizing groups for ionic photoacid generators include, but are not limited to, non-hydrophilic polar groups and hydrophilic polar groups. Suitable non-hydrophilic polar groups Including but not limited to cyano (-CN) and nitro (-N02). Suitable hydrophilic polar groups include, but are not limited to, protic groups, such as hydroxyl (OH), amine (NH2), ammonium, amidoamine , Hydrazone, urethane, urea or mercapto; or carboxylic acid (C02H), sulfonic acid, sulfinic acid, phosphorus An acid or a salt thereof. The compatibility-promoting group is preferably present in the branched segment. Typically, the protected acid group (described below) is exposed to UV or other actinic radiation and then baked after exposure ( Meaning that after deprotection), carboxylic acid groups will be generated. The branched polymers present in the photosensitive composition of the present invention typically contain between about 3% and about 40% by weight The acid-protecting monomer unit is preferably between about 5% and about 50%, and more preferably between about 5% and about 20%. Branching chains of such preferred branched polymers Segments typically contain between 35% and 100% of the protected acid groups present. Such branched polymers, when completely unprotected (all protected acid groups are converted to free acid groups), It has an acid value between about 20 and about 500, preferably between about 30 and about 330, and more preferably between about 30 and about 130. Similarly, the ethylenically unsaturated macromolecular composition is preferred The system has an acid value between about 20 and about 650, more preferably between about 90 and about ^, and most of the free acid groups are in the branched segments. This aspect of the invention Each of the photosensitive compositions contains a branched polymer, also known as a comb polymer, which contains a protected acid group. This branched polymer has a branched segment, called a polymer arm, and is relatively For Linear Main Chain-21-This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm)
,裝 訂, Binding
線 567404 A7 B7 五、發明説明(18 ) 段,具有限之分子量及有限之重量比。在一較佳具體實施 例中,大部份經保護酸基係存在於分枝鏈段中。此組合物 亦含有一種成份,譬如光酸發生劑,其會使得組合物對輕 射能具有反應性,尤其是對於在電磁光譜之紫外光區域中 之輻射能,而最特別是在遠或極端紫外光區域中。 在一特殊具體實施例中,此分枝狀聚合體係包含一或多 個分枝鏈段,以化學方式沿著線性主鏈段連接,其中分枝 狀聚合體具有數目平均分子量(Mn)約500·至40,000。此分枝狀 聚合體含有至少0.5重量%之分枝鏈段。分枝鏈段亦稱為聚 合體臂,典型上係沿著線性主鏈段無規則地分佈。”聚合 體臂”或分枝鏈段係為至少兩種重複單體單位之聚合體或 寡聚物,其係藉由共價鍵連接至線性主鏈段。此分枝鏈段 或聚合體臂,可在巨體與共單體之加成聚合製程期間摻入 分枝狀聚合體中,作為巨體成份。對本發明之目的而言, ”巨體π係為分子量範圍從數百至約40,000之聚合體、共聚物 或寡聚物,含有末端乙晞系不飽和可聚合基團。此巨體較 佳為以乙烯性基團封端之線性聚合體或共聚物。典型上, 此分枝狀聚合體為帶有一或多個聚合體臂,且較佳為至少 兩個聚合體臂之共聚物,而其特徵在於約0.5與約80重量% 之間,較佳為約5與50重量%:間之使用於聚合方法中之單 體成份,係為巨體。典型上,伴隨著巨體使用於聚合方法 中之共單體成份,同樣地含有單一乙烯性基團,其可與乙 缔系不飽和巨體共聚合。 此乙晞系不飽和巨體,及所形成之分枝狀聚合體之分枝 _-22-_ 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)Line 567404 A7 B7 V. Description of the invention (18) paragraph, has a limited molecular weight and a limited weight ratio. In a preferred embodiment, most of the protected acid groups are present in the branched segments. This composition also contains an ingredient, such as a photoacid generator, which makes the composition reactive to light energy, especially to radiant energy in the ultraviolet region of the electromagnetic spectrum, and most particularly to far or extreme In the ultraviolet region. In a specific embodiment, the branched polymerization system includes one or more branched segments that are chemically connected along a linear main segment, wherein the branched polymers have a number average molecular weight (Mn) of about 500. To 40,000. This branched polymer contains at least 0.5% by weight of branched segments. Branching segments, also known as polymer arms, are typically randomly distributed along a linear main segment. A "polymer arm" or branched segment is a polymer or oligomer of at least two repeating monomer units, which is connected to the linear main segment by a covalent bond. This branched segment or polymer arm can be incorporated into the branched polymer during the addition polymerization process of the macromonomer and the comonomer as a macromolecular component. For the purposes of the present invention, "macro pi is a polymer, copolymer or oligomer having a molecular weight ranging from hundreds to about 40,000, containing terminal ethylenic unsaturated polymerizable groups. This macro is preferably Linear polymers or copolymers terminated with ethylenic groups. Typically, this branched polymer is a copolymer with one or more polymer arms, and preferably at least two polymer arms, and its It is characterized in that it is between about 0.5 and about 80% by weight, preferably about 5 and 50% by weight: the monomer component used in the polymerization method is a giant. Typically, the giant is used in the polymerization method along with the macro The comonomer component in the same also contains a single ethylenic group, which can be copolymerized with an ethylenically unsaturated macrosome. This ethylenic unsaturated macrosome and the branches of the branched polymer formed _-22-_ This paper size applies to China National Standard (CNS) Α4 specification (210 X 297 mm)
裝 訂Binding
567404 A7 B7 五、發明説明(19 ) 鏈段及/或分枝狀聚合體之主鏈,可於其上已結合一或多 個經保護酸基。對本發明之目的而言,’f經保護酸基”係意 謂一種官能基,其當去除保護時,會獲得自由態酸官能 基,其會加強巨體及/或其所結合之分枝狀聚合體在水溶 液環境中之溶解度、溶脹性或分散能力。經保護酸基可摻 入乙晞系不飽和巨體及所形成之分枝狀聚合體之分枝鏈段 及/或分枝狀聚合體之主鏈中,無論是在其形成期間或之 後。雖然使用巨體及至少一種乙晞系不飽和單體之加成聚 合,對於形成分枝狀聚合體,係為較佳的,但使用無論是 加成或縮合反應以製備分枝狀聚合體之所有已知方法,均 可使用於本發明中。再者,利用無論是預成形之主鏈與分 枝鏈段或當場聚合之鏈段,亦可應用於本發明中。 連接至線性主鏈段之分枝鏈段,可衍生自乙晞系不飽和 巨體,其係根據美國專利4,680,352與美國專利4,694,054之一 般說明製成。巨體係藉自由基聚合方法,採用鈷化合物作 為催化鏈轉移劑,且特別是鈷(II)化合物而製成。鈷(II)化 合物可為五氰基鈷(II)化合物,或以下化合物之鈷(II)螯合 物,毗亞胺基羥基亞胺基化合物、二羥基亞胺基化合物、 二氮二羥基亞胺基二烷基癸二烯、二氮二羥基亞胺基-二烷 基Η--烷二晞、四氮四烷基環:十四烷四晞、四氮四烷基環 十二烷四烯、雙(二氟氧硼基)二苯基乙二醛肟基、雙(二氟 氧硼基)二甲基乙二醛肟基、Ν,>Γ-雙(亞柳基)乙二胺、二烷 基二氮-二氧二烷基十二碳二烯或二烷基二氮二氧基二烷 基-十三碳二烯。低分子量甲基丙烯酸酯巨體,亦可以五氰 _-23-_ 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐)567404 A7 B7 V. Description of the Invention (19) The main chain of the segment and / or branched polymer may have one or more protected acid groups bonded to it. For the purposes of the present invention, 'f protected acid group' means a functional group that, when removed from protection, will obtain a free acid functional group that will strengthen the macrosome and / or the branched form to which it is bound The solubility, swelling or dispersing ability of the polymer in the aqueous environment. Protected acid groups can be incorporated into the ethylenic unsaturated giants and the branched segments and / or branched polymers of the branched polymers formed. In the main chain of the body, either during or after its formation. Although the addition polymerization of the macro and at least one ethylenic unsaturated monomer is preferred, it is preferred for the formation of branched polymers, but All known methods, whether by addition or condensation reactions to prepare branched polymers, can be used in the present invention. Furthermore, utilizing either preformed main chains and branched segments or on-site polymerized segments It can also be used in the present invention. The branched segment connected to the linear main segment can be derived from the ethylenic unsaturated giant, which is made according to the general instructions of US Patent 4,680,352 and US Patent 4,694,054. Giant system Free radical polymerization , Using a cobalt compound as a catalytic chain transfer agent, and especially a cobalt (II) compound. The cobalt (II) compound may be a pentacyanocobalt (II) compound, or a cobalt (II) chelate of the following compounds, Pirimido hydroxyimino compound, dihydroxy imino compound, diazadihydroxy imino dialkyldecadiene, diazadihydroxy imino-dialkyl fluorene--alkane hydrazone, tetra Azotetraalkyl ring: tetradecane tetrafluorene, tetraazatetraalkylcyclododecanetetraene, bis (difluoroboryl) diphenylglyoxal oxime, bis (difluoroboryl) di Methylglyoxal oxime, N, > Γ-bis (salicylidene) ethylenediamine, dialkyldiazepine-dioxodialkyldodecadiene, or dialkyldiazadioxydioxide Alkyl-tridecadiene. Low-molecular-weight methacrylate giant, also pentacyanide _-23-_ This paper size applies to China National Standard (CNS) A4 specification (210X297 mm)
裝 訂Binding
567404 A7 B7 五、發明説明(20 ) 基鈷(II)催化鏈轉移劑製成,如在美國專利4,722,984中所揭 示者。 使用此途徑之說明性巨體,係為具有丙烯酸酯或其他乙 晞基單體之甲基丙婦酸酯聚合體,其中聚合體或共聚物具 有末端乙晞性基團與親水性官能基。用於製備巨體之較佳 單體成份,包括:甲基丙烯酸第三-丁酯(tBMA)、丙烯酸第 三-丁酯(tBA)、甲基丙晞酸甲酯(MMA);甲基丙晞酸乙酯 (EMA);甲基丙婦酸丁酯(BMA);甲基丙埽酸2-乙基己酯;丙 烯酸甲酯(MA);丙晞酸乙酯(EA);丙烯酸丁酯(BA);丙晞酸 2-乙基己酯;甲基丙晞酸2-羥乙酯(HEMA);丙烯酸2-羥乙酯 (HEA);甲基丙烯酸(MA);丙晞酸(AA);丙錦r酸與甲基丙烯 酸之酯類,其中酯基含有1至18個碳原子;丙晞酸與甲基 丙晞酸之腈類與醯胺類(例如丙缔腈);甲基丙婦酸與丙晞 酸之縮水甘油酯;分解烏頭酸(IA)及分解烏頭酸酐(ITA)、 半酯及醯亞胺;順丁晞二酸及順丁烯二酸酐、半酯及醯亞 胺;甲基丙烯酸胺基乙酯;曱基丙烯酸第三-丁基胺基乙 酯;甲基丙晞酸二甲胺基乙酯;甲基丙烯酸二乙胺基’乙 酯;丙缔酸胺基乙酯;丙稀·酸二甲胺基乙酯;丙婦酸二乙 胺基乙酯;丙烯醯胺;N-第三-辛基丙婦醯胺;乙晞基甲基 醚,苯乙缔(STY) ; 甲基苯乙:缔(AMS);醋酸乙晞酯;氯乙 婦等。 分解烏頭酸酐(ITA,2-亞甲基琥珀酐,CAS編號=2170-03-8)為 供使用於分枝狀聚合體之特別有利共單體,因其具有兩種 活性T能基,呈酐形式,在開環作用時,其變成三種,而 ___ -24- 本紙張尺度適用中g @家標準(CNS) A4規格(21G X 297公董)— ------ " ~567404 A7 B7 V. Description of the invention (20) A cobalt (II) -based catalytic chain transfer agent is made, as disclosed in U.S. Patent No. 4,722,984. Illustrative macros that use this approach are methacrylic acid ester polymers with acrylate or other ethylenic monomers, where the polymer or copolymer has a terminal ethylenic group and a hydrophilic functional group. The preferred monomer components for preparing macros include: tertiary butyl methacrylate (tBMA), tertiary butyl acrylate (tBA), methyl methyl propionate (MMA); methyl propyl Ethyl gallate (EMA); Butyl methyl propionate (BMA); 2-ethylhexyl methyl propionate; Methyl acrylate (MA); Ethyl propionate (EA); Butyl acrylate (BA); 2-ethylhexyl propionate; 2-hydroxyethyl methacrylate (HEMA); 2-hydroxyethyl acrylate (HEA); methacrylic acid (MA); propionic acid (AA) ); Esters of acrylic acid and methacrylic acid, in which the ester group contains 1 to 18 carbon atoms; nitriles and amines of malonic acid and methylpropionic acid (such as acrylonitrile); methyl Glycidyl esters of valproic acid and malonic acid; decomposition of aconitic acid (IA) and decomposition of aconitic anhydride (ITA), half-esters, and stilbene imines; maleic acid and maleic anhydride, half-esters, and stigmas Amine; Aminoethyl methacrylate; Tertiary-butylaminoethyl methacrylate; Dimethylaminoethyl methacrylate; Diethylamino 'ethyl methacrylate; Amine amine Ethyl ester; acrylic acid dimethylamino ethyl ester; diethyl acetic acid Ethyl acetate; Acrylamide; N-Third-octylpropanamide; Ethyl methyl ether, phenethyl ethyl (STY); Methyl phenyl ethyl: acetyl (AMS); ethyl ethyl acetate; chloroethyl Woman waiting. Decomposition aconitic anhydride (ITA, 2-methylene succinic anhydride, CAS number = 2170-03-8) is a particularly advantageous comonomer for branched polymers, because it has two active T-energy groups, presenting Anhydride form, which becomes three when ring-opening, and ___ -24- This paper is applicable in g @ 家 standard (CNS) A4 specification (21G X 297 public director) — ------ " ~
裝 訂Binding
線 567404 A7 B7 五、發明説明(21.) 得二酸。乙晞系不飽和部份基團為第一種官能基,其係提 供此共單體被併入共聚物中之能力,例如藉自由基聚合反 應。酐部份基團為第二種官能基,其能夠與多種其他官能 基反應,而得共價結合之產物。酐部份基團可與其反應之 官能基實例,為在醇中之羥基,以形成酯鏈結。在ITA之 酐部份基團與羥基反應時,係形成酯鏈結,及自由態羧酸 部份基團,其係為第三種官能基。此羧酸官能基可用於對 本發明光阻賦予水溶液加工性能。若使用具有經基之 PAG,則如一些實例中所示,其可經由此類型之酯鏈結(或 其他共價鏈結,譬如醯胺等),以共價鍵方式使PAG (或其 他光活性成份)連接(繫留)至包含ITA共單體或其類似物之 分枝狀聚合體。 此分枝狀聚合體可藉任何習用加成聚合方法製成。此分 枝狀聚合體或梳型聚合體,可製自一或多種可相容之乙晞 系不飽和巨體成份與一或多種可相容之習用乙烯系不飽和 共單體成份。較佳可加成聚合之乙烯系不飽和共單體成份 係為丙晞酸酯、甲基丙晞酸酯及苯乙埽性物質,以及其混 合物。適當可加成聚合之乙晞系不飽和共單體成份,包 括:甲基丙晞酸第三-丁酯(tBMA)、丙烯酸第三-丁酯 (tBA)、甲基丙烯酸甲酯(MMA)-I甲基丙烯酸乙酯(EMA);甲 基丙烯酸丁酯(BMA);甲基丙烯酸2-乙基己酯;丙晞酸甲酯 (MA);丙烯酸乙酯(EA);丙晞.酸丁酯(BA);丙烯酸2-乙基己 酯;甲基丙晞酸2-羥乙酯(HEMA);丙烯酸2-羥乙酯(HEA); 甲基丙烯酸(MAA);丙晞酸(AA);丙烯腈(AN);甲基丙烯腈 -25- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)Line 567404 A7 B7 V. Description of the invention (21.) Diacid is obtained. The ethylenic unsaturated group is the first functional group, which provides the ability of this comonomer to be incorporated into the copolymer, such as by free radical polymerization. The anhydride moiety is a second functional group that can react with a variety of other functional groups to obtain a covalently bonded product. An example of a functional group with which an anhydride portion group can react is a hydroxyl group in an alcohol to form an ester chain. When the anhydride portion of ITA reacts with a hydroxyl group, it forms an ester chain, and the free-state carboxylic acid portion group is a third functional group. This carboxylic acid functional group can be used to impart aqueous solution processing properties to the photoresist of the present invention. If a PAG with a radical is used, as shown in some examples, it can be covalently bonded to the PAG (or other optical link) via an ester link (or other covalent link such as amidine, etc.) of this type. Active ingredient) is linked (tethered) to a branched polymer containing ITA comonomer or its analog. This branched polymer can be made by any conventional addition polymerization method. This branched polymer or comb polymer can be prepared from one or more compatible ethylenic unsaturated macromonomer components and one or more compatible conventional ethylenically unsaturated comonomer components. The addition-polymerizable ethylenically unsaturated comonomer components are preferably propionate, methylpropionate, phenethylaceous substance, and mixtures thereof. Appropriate addition-polymerizable ethylenic unsaturated comonomer components, including: tertiary-butyl methacrylate (tBMA), tertiary butyl acrylate (tBA), and methyl methacrylate (MMA) -I ethyl methacrylate (EMA); butyl methacrylate (BMA); 2-ethylhexyl methacrylate; methyl propionate (MA); ethyl acrylate (EA); propionate. Acid Butyl ester (BA); 2-ethylhexyl acrylate; 2-hydroxyethyl methacrylate (HEMA); 2-hydroxyethyl acrylate (HEA); methacrylic acid (MAA); propionic acid (AA) ); Acrylonitrile (AN); Methacrylonitrile-25- This paper size applies to China National Standard (CNS) A4 (210X 297 mm)
裝 訂Binding
567404 A7 一 ___B7___ 五、發明説明(22 ) (MAN);分解烏頭酸(IA),及分解烏頭酸酐(ΓΓΑ)、半酯及醯 亞胺;順丁婦二酸,及順丁烯二酸酐、半酯及醯亞胺;甲 基丙晞酸胺基乙酯;甲基丙烯酸第三-丁基胺基乙酯;甲基 丙埽酸二甲胺基乙酯;甲基丙晞酸二乙胺基乙酯;丙埽酸 胺基乙酯;丙晞酸二甲胺基乙酯;丙烯酸二乙胺基乙酯; 丙缔醯胺;N-第三-辛基丙烯醯胺;乙晞基甲基醚類;苯乙 晞(S) ; α-甲基苯乙晞;醋酸乙晞酯;氯乙晞等。大部份可 共聚合單體必須是丙蹄酸@旨或苯乙缔性·物質或此等單體與 丙烯酸酯及其他乙稀基單體之共聚物。 本發明分枝狀聚合體之各組成線性主鏈段及/或分枝鏈 段’可含有多種官能基。”官能基”係被認為是能夠藉由直 接價鍵或藉由連結基團,而連接至主鏈段或分枝鏈段之任 何部份基團。可被主鏈段或分枝鏈段帶有之官能基之說明 例,係為-COOR24 ; -OR24 ; _SR24,其中R24可為氫,具有i 至12個碳原子之烷基;3-12個碳原子之環烷基;具有6至14 個碳原子之芳基、烷芳基或芳烷基;含有3至12個碳原 子’且另外含有s、ο、N或P原子之雜環族基團 或-〇R27,其中R27可為M2個碳原子之烷基,具有6至14個碳 原子之芳基、烷芳基或芳烷基;-CN ; -NR25R26,或 Ο 二 —c—nr25r26 /、中R與r6可為氫’具有1至12個碳原子之燒基;具有 12個碳原子之環烷基;6至14個碳原子之芳基、燒芳基、 -------—___- 26 - 本紙張尺度適财a s家標準(CNS) α4·(2ι() χ 297公董) 567404 A7567404 A7 ___B7___ V. Description of the Invention (22) (MAN); Decompose aconitic acid (IA), and decompose aconitic anhydride (ΓΓΑ), half esters and succinimide; maleic acid, and maleic anhydride , Half-esters and ammonium imines; aminoethyl methylpropionate; third-butylaminoethyl methacrylate; dimethylaminoethyl methylpropionate; diethyl methylpropionate Aminoethyl ester; Aminoethyl propionate; Dimethylaminoethyl propionate; Diethylaminoethyl acrylate; Allylamine; N-Third-octylpropenylamine; Ethylfluorenyl Methyl ethers; phenethylhydrazone (S); α-methylphenethylhydrazone; ethylacetoacetate; chloroacetamido and the like. Most of the copolymerizable monomers must be propanoic acid or phenyl ethylenic substances or copolymers of these monomers with acrylates and other ethylenic monomers. Each component of the branched polymer of the present invention may contain a linear main segment and / or a branched segment ' which may contain various functional groups. A "functional group" is considered to be a group capable of being attached to any part of the main segment or branch segment by a direct valence bond or by a linking group. Examples of functional groups that can be carried by the main chain or branched chain are -COOR24; -OR24; _SR24, where R24 can be hydrogen, an alkyl group having i to 12 carbon atoms; 3-12 Carbon alkyl cycloalkyl; aryl, alkaryl or aralkyl having 6 to 14 carbon atoms; heterocyclic group containing 3 to 12 carbon atoms' and additionally containing s, o, N or P atoms Or -〇R27, where R27 may be an alkyl group of 2 carbon atoms, an aryl, alkaryl or aralkyl group having 6 to 14 carbon atoms; -CN; -NR25R26, or 0-c-nr25r26 /, In which R and r6 may be hydrogen's alkynyl group having 1 to 12 carbon atoms; cycloalkyl group having 12 carbon atoms; aryl group, aryl group having 6 to 14 carbon atoms, ----- ---___- 26-This paper is suitable for financial standards (CNS) α4 · (2ι () χ 297 public director) 567404 A7
芳$元基;-CH2〇R28,其中R28 — 其· +, R為虱,1至12個碳原子之烷 丞,或3-12個碳原子之環焓其 丁之衣砭基,具有ό至14個碳原子之芳 土 ^方基、芳烷基,或R25i^R26环 4p ^ ^ m ^ 涉店7 /、汉可一起形成具有3至12個 藏原子,且含有至少一個 』王乂個S、N、0或P之雜環; p29 ——O=CR30R31 八中R 、R30及r3 1可為氫,丨至π個碳原子之烷基,或3 二個碳原子之壤烷基;6至14個碳原子之芳基、烷芳基、 方烷基,或-COOR24,或當r29、r3〇及/或r31 一起採用 時’可形成環狀基團、s〇3h ;胺基曱酸酯基;異氰酸酯或 、’工阻斷之異氰酸g旨| ;月尿基;環氧乙燒基;氮丙淀基;酉昆 一$氮化物基;偶氮基;疊氮化物基;重氮基;乙醯基乙 醯氧基;-SiRWR33R34,其中r32、r33及r34可為具有Μ〕個 蛟原子之烷基,或3_12個碳原子之環烷基,或-〇R35,其中 R35為M2個碳原子之烷基,或3-12個碳原子之環烷基;6至 14個碳原子之芳基、烷芳基或芳烷基;或_〇s〇3R36、^ 〇P〇2R36、-P〇2R36、_PR36R37R38、-〇p〇R36、^36^7 或 N+R36R37R38基團(其中r36、r37及r38可為氫,1至12個碳 原子之燒基’或3-12個碳原于之環燒基;6至14個碳原子之 芳基、烷芳基或芳烷基;或任何前述之鹽或鑌鹽。較佳官 能基為-COON、-OH、-NH2、醯胺基、乙烯基、胺基甲酸酯 基、異氰酸酯基、經阻斷之異氰酸酯基,或其組合。官能 基可位於分枝狀聚合體上之任何位置。但是,有時需要選 ___-27- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Aromatic radicals; -CH2〇R28, where R28 — its ·, R is lice, alkane group of 1 to 12 carbon atoms, or ring enthalpy of 3-12 carbon atoms, its butyl group has Aromatic earth ^ square, aralkyl, or R25i ^ R26 ring 4p ^ ^ m ^ 7 to 14 carbon atoms, Han can be formed together with 3 to 12 Tibetan atoms, and contains at least one 『王 乂A heterocyclic ring of S, N, 0 or P; p29 ——O = CR30R31 R, R30 and r3 1 in eight may be hydrogen, an alkyl group of π to π carbon atoms, or an alkyl group of 3 carbon atoms Aryl, alkaryl, square alkyl, or -COOR24 of 6 to 14 carbon atoms, or when used together with r29, r30, and / or r31 'can form a cyclic group, s03h; amine Isocyanate groups; isocyanates or isocyanates that are 'blocked by engineering'; | diarrhea group; ethylene oxide group; aziridine group; quinone group; nitride group; azo group; azide Diazo; ethanoyl ethoxy; -SiRWR33R34, wherein r32, r33 and r34 may be an alkyl group having 3] fluorene atoms, or a cycloalkyl group having 3 to 12 carbon atoms, or -0R35, Where R35 is an alkyl group of M2 carbon atoms, or 3-12 carbon atoms Cycloalkyl; aryl, alkaryl or aralkyl of 6 to 14 carbon atoms; or _〇s〇3R36, ^ 〇〇〇2〇36, -P〇2R36, _PR36R37R38, -〇O〇〇36, ^ 36 ^ 7 or N + R36R37R38 group (where r36, r37 and r38 can be hydrogen, 1 to 12 carbon atoms, or 3 to 12 carbon atoms, and 6 to 14 carbon atoms, Aryl, alkaryl, or aralkyl; or any of the foregoing salts or sulfonium salts. Preferred functional groups are -COON, -OH, -NH2, amido, vinyl, urethane, and isocyanate , Blocked isocyanate group, or a combination thereof. The functional group can be located at any position on the branched polymer. However, sometimes it is necessary to choose ___- 27- This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm)
裝 訂Binding
567404 A7 B7 五、發明説明(24.) 擇會對分枝狀聚合體之線性主鏈段賦予整體聚合體特徵之 共單體,及除了親水性以外,會對分枝鏈段賦予物理與化 學官能性之巨體,譬如溶解度、反應性等。 在本發明之某些較佳具體實施例中,分枝狀聚合體含有 可與光酸發生劑相容之官能基,該官能基係分佈在分枝狀 聚合體中,以致使25至100%之官能基係存在於含有大部份 經保護酸基之分枝狀聚合體之鏈段中。此等官能基是令人 滿意的,因為光酸發生劑與具有大部份.經保護酸基之分枝 狀聚合體分段具有加強之相容性,會造成較高光速度及可 能之較高解析度,及/或光阻之其他期望性質,該光阻包 含具有此等官能基以促進相容性之分枝狀聚合體。對於離 子性PAG,譬如三芳基锍鹽,會促進相容性之官能基,係 包括但不限於極性非親水性基團(例如硝基或氰基)與極性 親水性基團(例如羥基、羧基)。對於非離子性PAG,譬如 下文結構III,用以賦予相容性之較佳官能基,係比上文列 示之極性基團具較低極性。對後述情況而言,適當官能基 係包括但不限於會對非離子性PAG賦予頗為類似化學與物. 理性質之基團。以下述作為兩種特殊實例,芳族與全氟烷 基官能基係有效促進分枝狀聚合體與非離子性PAG (譬如下 文所予之結構III)之相容性。 在一些較佳具體實施例中,分枝狀聚合體為丙烯酸/甲 基丙烯酸/苯乙烯性共聚物,其為至少60重量%丙烯酸 酯,並具有至少60%甲基丙烯酸酯重複單位,存在於無論 是第一個位置或第二個位置上,第一個位置為鍵段之一(意 -28- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)567404 A7 B7 V. Description of the invention (24.) Select comonomers that give overall polymer characteristics to the linear main segment of the branched polymer, and in addition to hydrophilicity, give physical and chemical properties to the branched segments Functional macro, such as solubility, reactivity, etc. In certain preferred embodiments of the present invention, the branched polymer contains a functional group compatible with the photoacid generator, and the functional group is distributed in the branched polymer such that 25 to 100% The functional group is present in the segment of the branched polymer containing most of the protected acid groups. These functional groups are satisfactory because photoacid generators have a greater compatibility with branched polymer segments protected by acid groups, resulting in higher light speeds and possibly higher Resolution, and / or other desirable properties of photoresists, which include branched polymers having such functional groups to promote compatibility. For ionic PAGs, such as triarylsulfonium salts, functional groups that promote compatibility include but are not limited to polar non-hydrophilic groups (such as nitro or cyano) and polar hydrophilic groups (such as hydroxyl, carboxyl ). For non-ionic PAGs, such as the structure III below, the preferred functional group used to impart compatibility is less polar than the polar groups listed above. For the case described below, suitable functional groups include, but are not limited to, groups that impart fairly similar chemical and physical properties to non-ionic PAGs. Taking the following as two specific examples, aromatic and perfluoroalkyl functional groups are effective to promote the compatibility of branched polymers with nonionic PAGs (such as the structure III given below). In some preferred embodiments, the branched polymer is an acrylic / methacrylic / styrenic copolymer, which is at least 60% by weight acrylate and has at least 60% methacrylate repeating units, present in Regardless of the first position or the second position, the first position is one of the key segments (Italy-28- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm)
裝 訂Binding
567404 五、發明説明(25 ) 即分枝鏈段或線性主鏈段),第二個位置為與第一個位置不 同之鏈段,其中至少60%丙缔酸酯重複單位係存在於第二 個位置上。 在-些具體實施例中,分枝狀聚合體為含氣接枝共聚 物,其包含衍生自至少一種乙烯系不飽和化合物之重複單 位’該化合物含有至少一個氟原+,以共價方式連接至乙 缔系不飽和碳原子。帶有至少一個氟原子之重複單位,可 無論是在線性聚合體主鏈段中,或在分枝聚合體鏈段中; 其較佳係在線性聚合體主鏈段中。適用於本發明含氣接枝 共聚物,代表性乙婦系不飽和化合物,包括但不限於四氣 ^烯、氯三氟乙晞、六氟丙烯、三氟乙烯、二氟亞乙缔、 說乙埽及桃刚2,其中Rf4l至約1〇個碳原子之飽和全 歧基。本發明之含氟共聚物可包含任何整數之其他各氣 ,單體,?包括但不限於前文所列示者。較佳共單體:四 既乙埽、氯三氟乙缔、六氟丙婦、三氟乙缔及㈣匕, 其=Rf為1至約1G個碳原子之飽和全氟燒基。更佳共單體為 四氟乙缔、氣二氟乙埽、六氟丙締及,其 1至約個碳原子之飽和全氟垸基。最佳共、^乙 缔與氯三氟乙缔。 ^ ^ 在-些較佳具體實施例中,屋氣接枝共聚物係進一步包 含衍生自至少-種不飽和化合物之重複單位,選自包括上 文聚合體(a)所示之結構。 在立本發明之—項具體實施例中,pag係以共價鍵方式連 接(意即繫留)至含氟接枝共聚物,而得光阻。 本紙張尺錢财關 -29- 567404 A7 B7 五 發明説明( 26 在一些較佳具體實施例中,分枝狀聚合體為含氟共聚 物,其包$衍生自至少一種乙晞系不飽和化合物之重複單 位’該化合物含有氟基醇官能基,具有以下結構:567404 V. Description of the invention (25) (Branch segment or linear main segment), the second position is a different segment from the first position, in which at least 60% of the repeating units of acrylate are present in the second Positions. In some embodiments, the branched polymer is a gas-containing graft copolymer, which comprises repeating units derived from at least one ethylenically unsaturated compound, the compound contains at least one fluorogen + and is covalently linked To the ethylenically unsaturated carbon atom. The repeating unit with at least one fluorine atom may be either in the main segment of the linear polymer or in the branched polymer segment; it is preferably in the main segment of the linear polymer. Suitable for the gas-containing graft copolymer of the present invention, the representative ethylenic unsaturated compounds include, but are not limited to, tetrakisene, chlorotrifluoroacetamidine, hexafluoropropylene, trifluoroethylene, difluoroethylene, etc. Acetyl and Taogang 2, in which Rf4l is a saturated fully branched group of about 10 carbon atoms. The fluorinated copolymer of the present invention may contain any other integers, monomers, and monomers. Including but not limited to those listed above. Preferred comonomers: four are ethylammonium, chlorotrifluoroethylene, hexafluoropropene, trifluoroethylene, and tritium, and their = Rf is a saturated perfluoroalkyl group having 1 to about 1G carbon atoms. More preferred comonomers are tetrafluoroethylene, fluorodifluoroethane, hexafluoropropylene, and saturated perfluorofluorenyl groups of 1 to about carbon atoms. Best co-, ethylene and chlorotrifluoroethylene. ^ In some preferred embodiments, the house gas graft copolymer further comprises a repeating unit derived from at least one unsaturated compound, and is selected from the group including the structure shown in the above polymer (a). In a specific embodiment of the present invention, the pag is connected to the fluorine-containing graft copolymer by a covalent bond (that is, retained) to obtain a photoresist. This paper rule Qiancaiguan-29- 567404 A7 B7 Five invention descriptions (26 In some preferred embodiments, the branched polymer is a fluorinated copolymer, which is derived from at least one ethylidene unsaturated compound The repeating unit 'This compound contains a fluoroalcohol functional group and has the following structure:
-C(Rf)(Rf,)〇H 其中Rf與Rf,為1至約10個碳原子之相同或不同氟燒基,咬 一起採用為(CF2)n,其中η為2至10。 一 根據本發明之一種特定含氟分枝狀共聚物,其包含衍生 自至少一種含有氟基醇官能基之乙晞系.不飽和化合物之重 複單位,該共聚物可具有氟烷基存在,作為氟基醇官能基 足一部份。此等氟烷基係被稱為心與Rf,,其可為部份氟化 境基或完全氟化烷基(意即全氟烷基)。廣義言之,心與 為1至約10個碳原子之相同或不同氟烷基,或一起採用為 (CF2 )n ’其中η為2至10 (在此最後句子中,”一起採用”術語 係表示Rf與Rf,不為個別、不連續之氟化烷基,而是一起形 成環結構,譬如在下文5-員環情況中所示者:-C (Rf) (Rf,) OH where Rf and Rf are the same or different fluorocarbon groups of 1 to about 10 carbon atoms, and (CF2) n is used together, where η is 2 to 10. A specific fluorine-containing branched copolymer according to the present invention, which comprises a repeating unit derived from at least one ethylfluorene-based unsaturated compound containing a fluoroalcohol functional group, and the copolymer may have a fluoroalkyl group as The fluoroalcohol functional group is a part. These fluoroalkyl systems are called core and Rf, and they can be partially fluorinated or fully fluorinated (meaning perfluoroalkyl). Broadly speaking, the same or different fluoroalkyl groups of 1 to about 10 carbon atoms are used together or (CF2) n 'where η is 2 to 10 (in this last sentence, the term "used together" is used It means that Rf and Rf are not individual, discontinuous fluorinated alkyl groups, but form a ring structure together, as shown in the following 5-membered ring case:
根據本發明,Rf與Rf,可為部份氟化烷基,而無限制,惟必 須有足夠氟化度存在,以對氟醇官能基之羥基(-0H)賦予 酸度’以致使經基質子係實質上在驗性媒質中被移除,譬 如在氫氧化鈉水溶液或氫氧化四烷基銨水溶液中。在根據 本發明之較佳情況中,係有足夠氟取代存在於氟基醇官能 基之氟化烷基中,以致此羥基具有pKa值如下: -30- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404 A7 B7 五、發明説明(27 ) 5<pKa<ll。Rf與Rf,較佳係獨立為1至5個碳原子之全氟烷 基,且Rf與Rf,最佳係均為三氟曱基(CF3)。根據本發明之各 含氟共聚物,在157奈米之波長下,較佳係具有吸收係數低 於4.0微米'1,於此波長下較佳係低於3.5微米·1,且更佳係 於此波長下低於3.0微米〃。 包含氟基醇官能基之本發明氟化聚合體、光阻及方法, 可具有以下結構:According to the present invention, Rf and Rf may be partially fluorinated alkyl groups without limitation, but there must be a sufficient degree of fluorination to impart acidity to the hydroxyl group (-0H) of the fluoroalcohol functional group, so that It is essentially removed in the test medium, such as in aqueous sodium hydroxide solution or tetraalkylammonium hydroxide solution. In the preferred case according to the present invention, there is sufficient fluorine substitution in the fluorinated alkyl group of the fluoroalcohol functional group, so that the hydroxyl group has a pKa value as follows: -30- This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 567404 A7 B7 V. Description of the invention (27) 5 < pKa < ll. Rf and Rf are preferably perfluoroalkyl groups having 1 to 5 carbon atoms independently, and Rf and Rf are most preferably trifluorofluorenyl (CF3). Each fluorinated copolymer according to the present invention preferably has an absorption coefficient of less than 4.0 microns'1 at a wavelength of 157 nm, more preferably less than 3.5 microns · 1 at this wavelength, and more preferably at This wavelength is below 3.0 micrometers. The fluorinated polymer, photoresist and method of the present invention containing a fluoroalcohol functional group may have the following structure:
-ZCH2 C(Rf)(Rf,)OH 其中Rf與Rf,為1至約10個碳原子之相同或不同氟烷基,或 一起採用為(CF2)n,其中η為2至10 ; Z係選自包括氧、硫、 氮、磷,其他VA族元素及其他VIA族元素。所謂”其他VA 族元素”與”其他VIA族元素”術語,應明瞭此等術語於此處 係指在週期表此等族群之一中之任何其他元素,其不為此 等基團中所列舉之元素(意即氧、硫、氮、磷)。氧為較佳 Z基團。 含有氟基醇官能基且在本發明範圍内之代表性共單體之 一些說明性但非限制性實例,係於下文提出:-ZCH2 C (Rf) (Rf,) OH where Rf and Rf are the same or different fluoroalkyl groups of 1 to about 10 carbon atoms, or used together as (CF2) n, where η is 2 to 10; Z series It is selected from the group consisting of oxygen, sulfur, nitrogen, phosphorus, other VA group elements, and other VIA group elements. The terms "other VA group elements" and "other VIA group elements" should be understood to mean that these terms refer here to any other element in one of these groups of the periodic table and are not listed in this group Element (meaning oxygen, sulfur, nitrogen, phosphorus). Oxygen is the preferred Z group. Some illustrative but non-limiting examples of representative comonomers that contain fluoroalcohol functionality and are within the scope of the present invention are set out below:
CH2C(CF3)2OH ch2och2c(cf3)2〇hCH2C (CF3) 2OH ch2och2c (cf3) 2〇h
CH2C(CF3)2〇H ch2och2c(cf3)2oh ch2=ch〇ch2ch2〇ch2c(cf3)2〇h ch2=ch〇(ch2)4och2c(cf3)2〇h -31 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 567404 A7 B7 五、發明説明(28 ) 正如熟諳聚合體技藝者所習知,乙婦系不飽和化合物係 進行自由基聚合反應,而得具有衍生自乙晞系不飽和化合 物之重複單位之聚合體。明確言之,具有以下結構之乙晞 系不飽和化合物: p\夕 c=c S 丁 係為上文關於共聚物(al)所描述者。 · 具有至少一個氟醇基(c)之氟聚合體,係選自包括: (cl) 一種含氟聚合體,其包含衍生自至少一種乙晞系不飽 和化合物之重複單位,該化合物含有氟基醇官能基,具有 以下結構:CH2C (CF3) 2〇H ch2och2c (cf3) 2oh ch2 = ch〇ch2ch2〇ch2c (cf3) 2〇h ch2 = ch〇 (ch2) 4och2c (cf3) 2〇h -31-This paper standard applies Chinese national standard ( CNS) A4 specification (210X 297 mm) 567404 A7 B7 V. Description of the invention (28) As is well known to those skilled in the art of polymer polymerization, ethyl ethene unsaturated compounds undergo free radical polymerization, and they are derived from ethyl ethene Polymers of repeating units of unsaturated compounds. Specifically, the ethyl fluorene unsaturated compound having the following structure: p \ xi c = c S D is as described above with respect to the copolymer (al). · A fluoropolymer having at least one fluoroalcohol group (c), selected from the group consisting of: (cl) a fluoropolymer containing repeating units derived from at least one ethylenic unsaturated compound, the compound containing a fluoro group Alcohol functional group with the following structure:
-C(Rf)(Rf,)OH 其中&與1^,均如上述; (c2) —種含氟共聚物,其包含衍生自至少一種乙晞系不飽 和化合物之重複單位,其特徵在於至少一種乙烯系不飽和 化合物係為環狀或多環狀,至少一種乙晞系不飽和化合物 含有至少一個氟原子,以共價方式連接至乙晞系不飽和碳 原子,及至少一種乙晞系不飽和化合物包含默基醇官能 基,具有以下結構: .-C (Rf) (Rf,) OH where & and 1 ^ are as described above; (c2) a fluorinated copolymer comprising repeating units derived from at least one ethylenic unsaturated compound, characterized in that At least one ethylenically unsaturated compound is cyclic or polycyclic, at least one ethylenic unsaturated compound contains at least one fluorine atom, is covalently connected to an ethylenic unsaturated carbon atom, and at least one ethylenic unsaturated compound. The unsaturated compound contains a meryl alcohol functional group and has the following structure:.
-C(Rf)(Rf,)OH 其中Rf與Rf,均如上述; (c3) —種含氟共聚物,其包含: (i)衍生自至少一種乙晞系不飽和化合物之重複單 -32- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404 A7 B7 五 、發明説明(29 ) 位,該化合物含有至少三個氟原子,以共價方式 連接至兩個乙烯系不飽和碳原子;與 (ii)衍生自乙晞系不飽和化合物之重複單位,其包含 氟基醇官能基,具有以下結構:-C (Rf) (Rf,) OH wherein Rf and Rf are as described above; (c3)-a fluorocopolymer, comprising: (i) a repeating mono-32 derived from at least one ethylidene unsaturated compound -This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 567404 A7 B7 5. Description of the invention (29) position, the compound contains at least three fluorine atoms, covalently connected to two vinyl Saturated carbon atom; and (ii) a repeating unit derived from an ethyl acetate unsaturated compound, which contains a fluoroalcohol functional group, and has the following structure:
•C(Rf)(Rf,)OH 其中Rf^Rf,均如上述; (c4) 一種含說共聚物,其包含衍生自至少一種乙婦系不飽 和化合物之重複單位,該化合物含有氟基醇官能基,具有 以下結構:• C (Rf) (Rf,) OH where Rf ^ Rf are as described above; (c4) an allegorical copolymer comprising repeating units derived from at least one ethylenically unsaturated compound, the compound containing a fluoro alcohol Functional group with the following structure:
_ZCH2C(Rf)(Rf,)OH 其中Rf與Rf,均如上述;及Z為一種元素,選自元素週期表 (CAS版本)之VA族及其他VIA族。典型上,X為硫、氧、氮 或磷原子; (c5) —種含氟聚合體,其包含以下結構··_ZCH2C (Rf) (Rf,) OH wherein Rf and Rf are as described above; and Z is an element selected from the VA group and other VIA groups of the periodic table (CAS version). Typically, X is a sulfur, oxygen, nitrogen or phosphorus atom; (c5)-a fluorine-containing polymer, which contains the following structure ...
其中各R40、R41、R42及R43係獨立為氫原子,鹵原子,含 有1至10個碳原子之烴基,被至少一個Ο、S、N、P或鹵素 取代且具有1至12個碳原子之烴基,例如烷氧基、羧酸 -33- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404 A7 B7 五、發明説明(30 ) 基、複酸醋基或含有以下結構之官能基: -C(Rf)(Rf,)OR44 其中Rf與Rf,均如上述;R44為氫原子,或酸-或鹼-不安定保 護基;v為重複單位在聚合體中之數目;w為〇-4 ;至少—個 重複單位具有一種結構,其中至少一個R4 〇、R4 1、r4 2及 R43含有結構C(Rf)(Rf,)OR44,例如R40、R4l&R42為氫原子, 且 R4 3 為 CH2 OCH2 C(CF3 )2 OCH2 C02 C(CH3 )3,其中 ch2 C02 c(ch3 )3 為酸或鹼不安定保護基,或R43為0CH2C(CF3)2OCH2C02CCCH3)3, 其中0CH2C02C(CH3)3為酸或鹼不安定保護基;及 (c6) —種聚合體,其包含: (i) 衍生自至少一種乙晞系不飽和化合物之重複單 位,該化合物含有氟基醇官能基,具有以下結 構:Each of R40, R41, R42, and R43 is independently a hydrogen atom, a halogen atom, a hydrocarbon group containing 1 to 10 carbon atoms, substituted with at least one 0, S, N, P, or halogen and having 1 to 12 carbon atoms. Hydrocarbon group, such as alkoxy group, carboxylic acid-33- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 567404 A7 B7 V. Description of the invention (30) group, polyacid group or those containing the following structure Functional group: -C (Rf) (Rf,) OR44 where Rf and Rf are as described above; R44 is a hydrogen atom, or an acid- or base-unstable protecting group; v is the number of repeating units in the polymer; w Is 0-4; at least one repeating unit has a structure in which at least one of R4 0, R4 1, r4 2 and R43 contains the structure C (Rf) (Rf,) OR44, for example R40, R4l & R42 are hydrogen atoms, and R4 3 is CH2 OCH2 C (CF3) 2 OCH2 C02 C (CH3) 3, where ch2 C02 c (ch3) 3 is an acid or base labile protecting group, or R43 is 0CH2C (CF3) 2OCH2C02CCCH3) 3, where 0CH2C02C (CH3 ) 3 is an acid or base labile protecting group; and (c6) a polymer comprising: (i) a repeating monomer derived from at least one ethylidene unsaturated compound The fluorine-containing alcohol compound functional group having the following structure:
-C(Rf)(Rf.)OH 其中Rf與Rf .均如上述;與 (ii) 衍生自至少一種具有以下結構之乙晞系不飽和化 合物之重複單位: (H)(R45)C=C(R46)(CN) 其中R45為氫原子或CN; R46為(^-(^烷基、氫原子 或C02R47基團,其中三為<^-0:8烷基或氫原子。 此氟聚合體或共聚物包含衍生自至少一種乙烯系不飽和 化合物之重複單位(討論於下文),該化合物含有氟基醇官 能基’其可具有氟烷基存在,作為氟醇基之一部份,且係 描述於前文關於共聚物(b)。此等氟烷基係如上述被稱為Rf _ -34- t ^#^.(CNS) A4W(21〇X297^)-C (Rf) (Rf.) OH where Rf and Rf. Are as described above; and (ii) a repeating unit derived from at least one ethylenic unsaturated compound having the following structure: (H) (R45) C = C (R46) (CN) wherein R45 is a hydrogen atom or CN; R46 is a (^-(^ alkyl, hydrogen atom, or C02R47 group, where three is < ^-0: 8 alkyl or hydrogen atom. This fluorine polymerization The block or copolymer contains repeating units (discussed below) derived from at least one ethylenically unsaturated compound that contains a fluoroalcohol functional group which may have a fluoroalkyl group as part of the fluoroalcohol group, and Is described in the foregoing about the copolymer (b). Such fluoroalkyl systems are referred to as Rf _ -34- t ^ # ^. (CNS) A4W (21〇X297 ^)
裝 訂Binding
567404 A7 B7 五、發明説明(31 ) 與 Rf,。 正如熟諳聚合St技藝者所習知,乙歸系不飽和化合物係 進行自由基聚合反應,而得具有衍生自乙晞系不飽和化合 物之重複單位之聚合體。明確言之,具有以下結構之乙烯 系不飽和化合物: P\ ' c=c ο/ \ 係描述於上文關於共聚物(al)。 根據本發明之各含氟共聚物,具有在157奈米波長下之吸 收係數低於4.0微米·1,於此波長下較佳係低於3.5微米_1, 於此波長下更佳係低於3.0微米·1,而於此波長下又更佳係 低於2.5微米4。 包含氟基醇官能基之本發明氟化聚合體、光阻及方法, 可具有以下結構:567404 A7 B7 V. Description of the invention (31) and Rf. As is well known to those skilled in the art of polymerizing St polymers, ethylenically unsaturated compounds undergo radical polymerization to obtain polymers having repeating units derived from ethylenically unsaturated compounds. Specifically, the ethylene-based unsaturated compound having the following structure: P \ 'c = cο / \ is described above with respect to the copolymer (al). Each fluorinated copolymer according to the present invention has an absorption coefficient at a wavelength of 157 nm of less than 4.0 μm · 1, preferably at a wavelength of less than 3.5 μm_1, and more preferably at a wavelength of less than 3.0 μm · 1, and at this wavelength it is more preferably below 2.5 μm4. The fluorinated polymer, photoresist and method of the present invention containing a fluoroalcohol functional group may have the following structure:
-ZCH2C(Rf)(Rf,)〇H 其中Rf與Rf,均如上述;Z係如上述。 含有氟基醇官能基且在本發明範圍内之代表性共單體之 一些說明性但非限制性實例,係於下文提出:-ZCH2C (Rf) (Rf,) OH Where Rf and Rf are as described above; Z is as described above. Some illustrative but non-limiting examples of representative comonomers that contain fluoroalcohol functionality and are within the scope of the present invention are set out below:
—CH2C(CF3)20H - ~CH2〇CH2C(CF3)2〇H--CH2C (CF3) 20H-~ CH2〇CH2C (CF3) 2〇H
CH2C(CF3)2〇HCH2C (CF3) 2〇H
ch2och2c(cf3)2〇h -35- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404 A7 B7 五、發明説明(32 )ch2och2c (cf3) 2〇h -35- This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 567404 A7 B7 V. Description of the invention (32)
CH2=CHOCH2CH2OCH2C(CF3)2OH CH2=CH0(CH2)40CH2C(CF3)20HCH2 = CHOCH2CH2OCH2C (CF3) 2OH CH2 = CH0 (CH2) 40CH2C (CF3) 20H
可於最初提供交聯及接著分裂(例如在曝露於強酸時)之 各種雙官能性化合物,亦可在本發明共聚物中作為共單體 使用。作為說明性但非限制性實例,雙官能性共單體NB-F-OMOMO-F-NB係令人滿意地在本發明共聚物中作為共單體。 其與類似雙官能性共單體,當存在於本發明光阻組合物之 共聚物成份中時,可獲得共聚物,其係為較高分子量且係 為經輕微交聯之材料。摻入此等包含雙官能性單體之共聚 物之光阻組合物,可具有經改良之顯像與成像特性,因在 曝光時(其會以光化學方式產生強酸,如下文解釋),其會 造成雙官能性基團分裂,及因此極顯著降低分子量,此等 因素可提供大為改良之顯像與成像特性(例如,經改良之對 比)。此等氟醇基團及其具體實施例,係更詳細地如上文及 在2000年4月28日提出申請之PCT/US00/11539中所述。 存在於腈/氟基醇聚合體至少一部份腈官能基,係 由於併入衍生自至少一種乙烯系不飽和化合物之重複單位 所造成,該化合物具有至少一個腈基且具有以下結構: (H)(R48)C=C(R49)(CN) 其中R48為氫原子或氰基(CN) ; R49為範圍從1至約8個碳原 __ 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 567404 A7 B7五、發明説明(33 ) 子之烷基,C02R5〇基團,其中R50為範圍從1至約8個碳原 子之燒基,或氫原子。丙晞腈、甲基丙歸腈、反丁晞二腈 (反式-1,2-二氰基乙烯)與順丁晞二腈(順式-1,2-二氰基乙烯) 係為較佳。丙烯腈為最佳。 腈/氟基醇聚合體典型特徵在於具有衍生自至少一種乙 晞系不飽和化合物之重複單位,其含有氟基醇官能基,存 在於腈/氟基醇聚合體冲,約10至約60莫耳百分比,及衍 生自至少一種乙晞系不飽和化合物之重複單位,其含有至 少一個腈基存在於聚合體中,約20至約80莫耳百分比。更 典型上針對達成低吸收係數值之腈/氟基醇聚合體,其特 徵在於具有衍生自至少一種乙烯系不飽和化合物之重複單 位,該化合物含有氟基醇官能基,以低於或等於45莫耳百 分比存在於聚合體中,且又更典型上為低於或等於30莫耳 百分比,並具有相對較小量含有腈基之重複單位,造成聚 合體之至少一部份餘額。 在一項具體實施例中,此聚合體包含至少一個經保護官 能基。該至少一個經保護官能基之官能基,典型上係選自 包括酸性官能基與鹼性官能基。經保護官能基之官能基之 非限制性實例,係為羧酸類與氟基醇類。 於另一項具體實施例中,腈_:1氟基醇聚合體可包含脂族 多環狀官能基。在此具體實施例中,含有脂族多環狀官能 基之腈/氟基醇聚合體之重複單位百分比,其範圍為約1 至約70,較佳為約10至約55莫耳% ;且更典型範圍為約20 至約45莫耳%。 -37-Various bifunctional compounds which can be initially provided with cross-linking and subsequent cleavage (for example when exposed to strong acids) can also be used as comonomers in the copolymers of the present invention. As an illustrative but non-limiting example, the bifunctional comonomer NB-F-OMOMO-F-NB is satisfactory as a comonomer in the copolymers of the present invention. It is similar to a bifunctional co-monomer, and when present in the copolymer component of the photoresist composition of the present invention, a copolymer can be obtained, which is a relatively high molecular weight and a lightly crosslinked material. Photoresist compositions incorporating such copolymers containing bifunctional monomers may have improved imaging and imaging characteristics, since upon exposure (which produces a strong acid photochemically, as explained below), Factors such as the splitting of bifunctional groups, and therefore a significant reduction in molecular weight, can provide greatly improved imaging and imaging characteristics (eg, improved contrast). These fluoroalcohol groups and their specific examples are described in more detail above and in PCT / US00 / 11539, filed on April 28, 2000. At least a portion of the nitrile functional groups present in the nitrile / fluoroalcohol polymer are caused by the incorporation of repeating units derived from at least one ethylenically unsaturated compound, which has at least one nitrile group and has the following structure: (H ) (R48) C = C (R49) (CN) where R48 is a hydrogen atom or a cyano group (CN); R49 is a carbon source ranging from 1 to about 8 carbon atoms __ This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) 567404 A7 B7 V. Description of the Invention The alkyl group of (33), C02R50 group, where R50 is an alkyl group, or hydrogen atom, ranging from 1 to about 8 carbon atoms. The ratios of propionitrile, methylpropionitrile, transbutyronitrile (trans-1,2-dicyanoethylene) and cisbutyronitrile (cis-1,2-dicyanoethylene) are good. Acrylonitrile is the best. Nitrile / fluoroalcohol polymers are typically characterized by having repeating units derived from at least one ethylenic unsaturated compound, which contain fluoroalcohol functional groups, which are present in the nitrile / fluoroalcohol polymer, about 10 to about 60 moles. Ear percentages, and repeating units derived from at least one ethylidene-based unsaturated compound, which contain at least one nitrile group present in the polymer, from about 20 to about 80 mole percentages. More typically, a nitrile / fluoroalcohol polymer that achieves a low absorption coefficient value is characterized by having repeating units derived from at least one ethylenically unsaturated compound, which contains a fluoroalcohol functional group, at 45 or less The mole percentage is present in the polymer, and is more typically less than or equal to 30 mole percentage, and has a relatively small amount of repeating units containing nitrile groups, resulting in at least a portion of the polymer's balance. In a specific embodiment, the polymer comprises at least one protected functional group. The functional group of the at least one protected functional group is typically selected from the group consisting of an acidic functional group and a basic functional group. Non-limiting examples of protected functional groups are carboxylic acids and fluoroalcohols. In another embodiment, the nitrile- 1: fluoro alcohol polymer may include an aliphatic polycyclic functional group. In this specific embodiment, the percentage of repeating units of the nitrile / fluoroalcohol polymer containing aliphatic polycyclic functional groups ranges from about 1 to about 70, preferably about 10 to about 55 mole%; and A more typical range is from about 20 to about 45 mole%. -37-
裝 訂Binding
k 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 567404 A7 B7 五、發明説明(34 ) 除了明確指出及於本文中指稱者之外,此腈/氟基醇聚 合體可含有其他官能基,其附帶條件是芳族官能基較佳係 不存在於腈/氟基醇聚合體中。已發現芳族官能基存在於 此等聚合體中,會減損其透明性,且會造成其在遠與極端 UV區域中之過於強烈吸收,以致不適合使用於此等波長下 成像之層。 在一些具體實施例中,此聚合體係為分枝狀聚合體,包 含一或多個分枝鏈段,以化學方式沿著線性主鏈段連接。 此分枝狀聚合體可在至少一種乙烯系不飽和巨體成份與至 少一種乙晞系不飽和共單體之自由基加成聚合期間形成。 此分枝狀聚合體可藉任何習用加成聚合方法製成。此分枝 狀聚合體或梳型聚合體可製自一或多種可相容之乙晞系不 飽和巨體成份,與一或多種可相容之習用乙烯系不飽和巨 體成份,及一或多種可相容之習用乙埽系不飽和單體成 份。典型上,可加成聚合之乙烯系不飽和單體成份係為丙 烯腈、甲基丙晞腈、反丁晞二腈、順丁烯二腈、經保護及 /或未經保護之不飽和氟基醇類及經保護及/或未經保護 之不飽和羧酸類。製造此類型分枝狀聚合體之結構與方 法,係針對上文聚合體類型(b)作討論,且如WO 00/25178中 所述。 · — _ 具有至少一個氟基醇之氟聚合體,可進一步包含間隔 基,選自包括乙烯、α-烯烴、1,Γ-雙取代晞烴、乙烯基醇 類、乙烯基醚類及1,3-二烯類。 聚合體⑹包括全氟(2,2-二甲基-1,3-二氧伍圜烯)或CX2=CY2 -38- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)k This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 567404 A7 B7 V. Description of the invention (34) Except as explicitly stated and referred to herein, this nitrile / fluoroalcohol polymer may contain Other functional groups are subject to the condition that aromatic functional groups are preferably absent from the nitrile / fluoroalcohol polymer. The presence of aromatic functional groups in these polymers has been found to detract from their transparency and cause them to absorb too strongly in the far and extreme UV regions, making them unsuitable for imaging at these wavelengths. In some embodiments, the polymerization system is a branched polymer containing one or more branched segments, which are chemically connected along a linear main segment. This branched polymer can be formed during radical addition polymerization of at least one ethylenically unsaturated macromonomer component and at least one ethylenic unsaturated co-monomer. This branched polymer can be made by any conventional addition polymerization method. This branched polymer or comb-type polymer can be made from one or more compatible ethylenic unsaturated giant components, and one or more compatible conventional ethylene-based unsaturated giant components, and one or more A variety of compatible conventional acetamidine unsaturated monomer components. Typically, the addition-polymerizable ethylenically unsaturated monomer components are acrylonitrile, methacrylonitrile, transbutadionitrile, maleimonitrile, and protected and / or unprotected unsaturated fluorine Alcohols and protected and / or unprotected unsaturated carboxylic acids. The structure and method of making this type of branched polymer is discussed with respect to the polymer type (b) above and as described in WO 00/25178. · — _ Fluoropolymer with at least one fluoroalcohol, which may further include a spacer, selected from the group consisting of ethylene, α-olefins, 1, Γ-disubstituted fluorenes, vinyl alcohols, vinyl ethers, and 1, 3-dienes. Polymer ⑹ includes perfluorinated (2,2-dimethyl-1,3-dioxolene) or CX2 = CY2 -38- This paper size applies to China National Standard (CNS) A4 (210X 297 mm)
裝 訂Binding
567404 A7 B7 五、發明説明(35 ) 之非晶形乙烯基均聚物,其中X = F或CF3,且Y = -H,或全 氟(2,2-二甲基-1,3-二氧伍圜晞)與CX2=CY2之非晶形乙烯系共 聚物,該均聚物或共聚物係視情況含有一或多種共單體 CR51R52=CR53R54,其中各 R51、R52、R53 係獨立選自 Η 或 F,且其中R54係選自包括-F、-CF3、-OR55,其中R55為 CnF2n+l,其中 n=l 至 3,-OH(當 R53=H 時)及C1(當 R51、R52 及R53 = F時)。聚合體(d)可另外包含CH2=CHCF3與CF2=CF2, 以 1 ·· 2 至 2 : 1 比例,CH2=CHF 與 CF2=CFC1,以 1 ·· 2 至 2 : 1 比例,CH2=CHF與CC1H=CF2,以1 : 2至2 : 1比例,全氟(2-亞 甲基斗甲基-1,3-二氧伍圜)以任何比例與全氟(2,2-二甲基-1,3-二氧伍圜晞),全氟(2-亞甲基-4-甲基-1,3-二氧伍圜)以任何比 例與二氟亞乙烯之非晶形乙缔基共聚物,其係為非晶形, 及全氟(2-亞甲基-4-甲基-1,3-二氧伍圜)之均聚物。 此等聚合體係藉由此項技藝中關於氟聚合體已知之聚合 方法製成。所有此等聚合體均可以下述方式製成,將單 體、惰性流體(譬如CF2 C1CC12 F、CF3 CFHCFHCF2 CF3或二氧化 碳)及可溶性自由基引發劑,譬如HFPO二聚體過氧化物1或 Perkadox®16N,密封於冷卻式熱壓鍋中,然後按適當方式加 熱以引發聚合反應。 CF3 CF2 CF2 OCF(CF3 )(C=0)0d(C=0)CF(CF3 )OCF2 CF2CF3 1 對HFPO二聚體過氧化物而言,室溫(〜25°C )為合宜聚合 反應溫度,而對Perkadox®而言,可使用60至90°C之溫度。依 單體與聚合反應溫度而定,壓力可從大氣壓力改變至 ___-39-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)567404 A7 B7 V. Amorphous vinyl homopolymer of invention description (35), where X = F or CF3, and Y = -H, or perfluoro (2,2-dimethyl-1,3-dioxy Wu Yi) and CX2 = CY2 amorphous ethylene-based copolymer, the homopolymer or copolymer contains one or more comonomers CR51R52 = CR53R54, where each R51, R52, R53 is independently selected from Η or F, and wherein R54 is selected from the group consisting of -F, -CF3, -OR55, where R55 is CnF2n + l, where n = 1 to 3, -OH (when R53 = H), and C1 (when R51, R52, and R53) = F). The polymer (d) may further include CH2 = CHCF3 and CF2 = CF2, in a ratio of 1 ·· 2 to 2: 1, CH2 = CHF and CF2 = CFC1, in a ratio of 1 ·· 2 to 2: 1, and CH2 = CHF and CC1H = CF2, in a ratio of 1: 2 to 2: 1: perfluoro (2-methylene acetomethyl-1,3-dioxolane) in any ratio with perfluoro (2,2-dimethyl- 1,3-dioxofluorene), an amorphous ethylene copolymer of perfluoro (2-methylene-4-methyl-1,3-dioxofluorene) and difluoroethylene in any proportion It is an amorphous, homopolymer of perfluoro (2-methylene-4-methyl-1,3-dioxolane). These polymerization systems are made by polymerization methods known in the art about fluoropolymers. All these polymers can be made from monomers, inert fluids (such as CF2 C1CC12 F, CF3 CFHCFHCF2 CF3, or carbon dioxide) and soluble free radical initiators such as HFPO dimer peroxide 1 or Perkadox® 16N, sealed in a cooled autoclave, and then heated in an appropriate manner to initiate polymerization. CF3 CF2 CF2 OCF (CF3) (C = 0) 0d (C = 0) CF (CF3) OCF2 CF2CF3 1 For HFPO dimer peroxides, room temperature (~ 25 ° C) is the appropriate polymerization temperature, For Perkadox®, temperatures of 60 to 90 ° C can be used. Depending on the temperature of the monomer and polymerization reaction, the pressure can be changed from atmospheric pressure to ___- 39-_ This paper size applies to China National Standard (CNS) A4 (210X 297 mm)
裝 訂Binding
線 567404 A7 B7 五、發明説明(36·)Line 567404 A7 B7 V. Description of the invention (36 ·)
500psi或更高。然後,當聚合體以不溶性沉澱物形成時, 可藉過濾分離,或當可溶於反應混合物中時,可藉蒸發或 沉澱分離。在許多情況中,表觀上乾燥之聚合體仍然保有 相當可觀之溶劑及/或未反應之單體,且必須進一步在真 空烘箱中乾燥,較佳係在氮氣流出下。許多聚合體亦可藉 由水性乳化聚合製成,其係以下述方式達成,將去離子 水,引發劑譬如過硫酸銨或Vazo®56 WSP,單體,界面活性 劑譬如全氟辛酸銨,或分散劑譬如甲基.纖維素,密封於冷 卻式熱壓鍋中,及加熱以引發聚合反應。此聚合體可經由 使任何所形成之乳化液破碎,過濾及乾燥而分離。在所有 情況中,氧應被排除在反應混合物之外。可添加鏈轉移 劑,譬如氯仿,以降低分子量。 訂500psi or higher. Then, when the polymer is formed as an insoluble precipitate, it can be separated by filtration, or when it is soluble in the reaction mixture, it can be separated by evaporation or precipitation. In many cases, apparently dried polymers still retain considerable solvents and / or unreacted monomers, and must be further dried in a vacuum oven, preferably under nitrogen flow. Many polymers can also be made by aqueous emulsion polymerization, which is achieved by deionized water, initiators such as ammonium persulfate or Vazo® 56 WSP, monomers, surfactants such as ammonium perfluorooctanoate, or dispersants For example, methyl cellulose is sealed in a cooling autoclave and heated to initiate the polymerization reaction. This polymer can be separated by breaking up any formed emulsion, filtering and drying. In all cases, oxygen should be excluded from the reaction mixture. Chain transfer agents such as chloroform can be added to reduce molecular weight. Order
製自經取代或未經取代乙晞基醚類之含腈/氟基醇聚合 體⑷,係包含: (el) —種聚合體,其包含: (i) 衍生自至少一種乙烯系不飽和化合物之重複單 位,該化合物包含乙晞基醚官能基且具有以下結 構· ch2=cho-r56 其中R5 6為具有1至12個碳U之烷基,具有6至約20個 碳原子之芳基、芳烷基或烷芳基,或該基團係被S、Ο、N 或P原子取代;及 (ii) 衍生自至少一種具有以下結構之乙晞系不飽和化 合物之重複單位: -40- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) ^0/404Nitrile / fluoroalcohol-containing polymers ⑷ made from substituted or unsubstituted acetamyl ethers, comprising: (el) a polymer comprising: (i) derived from at least one ethylenically unsaturated compound Repeating unit, the compound contains an ethyl ether functional group and has the following structure: ch2 = cho-r56 where R5 6 is an alkyl group having 1 to 12 carbon U, an aryl group having 6 to about 20 carbon atoms, Aralkyl or alkaryl, or the group is substituted by S, O, N or P atoms; and (ii) a repeating unit derived from at least one ethylenic unsaturated compound having the structure: -40- present Paper size applies to China National Standard (CNS) A4 (210X297 mm) ^ 0/404
(H)(R5 7 )〇C(R5 8 )(CN) 、二中R為氫原子或氰基;R5 S為範圍從1至約8個碳原子 、土 C〇2R 9,其中R59為範圍從i至約8個碳原子之烷 基,或氫原子;及 (111)衍生自至少一種包含酸性基團之乙埽系不飽和化 合物之重複單位;及 (e2) —種聚合體,其包含·· (1)衍生自至少一種乙婦系不飽和化合物之重複單 位,该化合物包含乙烯基醚官能基與氟基醇官能 基,並具有以下結構:(H) (R5 7) 〇C (R5 8) (CN), in which R is a hydrogen atom or a cyano group; R5 S is a range from 1 to about 8 carbon atoms, and soil C0R2, where R59 is a range An alkyl group from i to about 8 carbon atoms, or a hydrogen atom; and (111) a repeating unit derived from at least one ethylenic unsaturated compound containing an acidic group; and (e2) a polymer comprising (1) A repeating unit derived from at least one ethylenically unsaturated compound, the compound containing a vinyl ether functional group and a fluoroalcohol functional group, and having the following structure:
C(R6 0 )(R6 1 )=c(R6 2 ).〇-D-C(Rf )(Rf t )〇H 、中R 、r6 1及R6 2係獨立為氫原子,範圍從i至約3個碳 =子《燒基;D為至少-個原子,其係連接乙婦基酸官能 土、、經過氧原子,至氟基醇官能基之碳原子;Rf與Rf,均如 上述;及 ⑻衍生自至少一種具有以下結構之乙烯系不飽和化 合物之重複單位: (H)(R5 7 )C=C(R5 8 )(CN) 、其中R為氫原子或氰基;R5 8為範圍從丨至約8個碳原子 <烷基,C〇2R59,其中R59為i圍從i至約8個碳原子之烷 基’或氫原子;及 (ϋ〇衍生自至少一種包含酸性基團之乙埽系不飽和化 合物之重複單位。 此氟醇基團與具體實施例係更詳細地針對上文聚合體(c6)C (R6 0) (R6 1) = c (R6 2). 〇-DC (Rf) (Rf t) 〇H, middle R, r6 1 and R6 2 are independently hydrogen atoms, ranging from i to about 3 Carbon = carbon atom; D is at least one atom, which is a carbon atom connected to ethynyl functional soil, via an oxygen atom, to a fluoroalcohol functional group; Rf and Rf are as described above; and ⑻ is derived Repeating units from at least one ethylenically unsaturated compound having the following structure: (H) (R5 7) C = C (R5 8) (CN), where R is a hydrogen atom or a cyano group; R5 8 is a range from 丨 to About 8 carbon atoms < alkyl, Co2R59, where R59 is an alkyl 'or hydrogen atom with i ranging from i to about 8 carbon atoms; and (ii) derived from at least one ethyl group containing an acidic group This is a repeating unit of unsaturated compounds. This fluoroalcohol group and specific examples are more detailed for the polymer (c6) above.
裝 訂Binding
567404 A7 B7 五、發明説明(38·) 加以描述。落在含有氟基醇官能基之一般性結構式(前文所 予)中且在本發明範圍内之乙烯基醚單體之一些說明性但非 限制性實例,係於下文提出: ch2 =choch2 ch2 OCH2 C(CF3 )2 OH CH2 =CHO(CH2 )4 OCH2 C(CF3 )2 OH 腈基團及其具體實施例,及以腈與氟醇基團製成之線性 與分枝狀聚合體,及其具體實施例,亦更詳細地針對上文 聚合體(c6)加以描述與引用。 此等聚合體可以約10至約99.5重量%之量存在,以全部組 合物(固體)之重量為基準。 形成光阻影像之方法 製備光阻影像於基材上之方法,係包括以下順序: (X) 使光阻元件以影像複製方式曝光,以形成經成像與 未經成像區域,其中該光阻元件包括一個基材;一個抗蝕 刻層;及至少一個光阻層,製自一種光阻組合物,其包含: (A) 選自上文⑷-(e)之聚合體,及其混合物;與 (B) 光活性成份;及 (Y) 使具有經成像與未經成像區域之經曝光光阻層顯 像,以形成浮凸影像在基材上。 以影像複製方式曝光 光阻層係經由將光阻組合j敷至帶有抗蝕刻層之基 材,並乾燥以移除溶劑而製成。例如,抗蝕刻層係藉由化 學蒸氣沉積(CVD)塗敷至基材·。經如此形成之光阻層在電磁 光譜之紫外光區域中係為敏感的,且尤其是對於波長$ 365 奈米者。本發明光阻組合物之影像複製曝光,可在許多不 _-42-_ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)567404 A7 B7 5. Description of the invention (38 ·). Some illustrative but non-limiting examples of vinyl ether monomers that fall into the general structural formula (previously) containing fluoroalcohol functional groups and are within the scope of the present invention are presented below: ch2 = choch2 ch2 OCH2 C (CF3) 2 OH CH2 = CHO (CH2) 4 OCH2 C (CF3) 2 OH nitrile groups and specific examples thereof, and linear and branched polymers made of nitrile and fluoroalcohol groups, and The specific embodiment is also described and referred to the polymer (c6) in more detail. These polymers may be present in an amount of about 10 to about 99.5% by weight, based on the weight of the entire composition (solid). Method for forming a photoresist image The method for preparing a photoresist image on a substrate includes the following sequence: (X) exposing the photoresist element in an image copying manner to form an imaged and unimaged area, wherein the photoresist element Comprising a substrate; an etch-resistant layer; and at least one photoresist layer made from a photoresist composition comprising: (A) a polymer selected from the group consisting of ⑷- (e) above, and mixtures thereof; and ( B) a photoactive component; and (Y) developing an exposed photoresist layer having imaged and unimaged areas to form a relief image on a substrate. The photoresist layer is exposed by image replication. The photoresist layer is formed by applying a photoresist combination j to a substrate with an anti-etching layer and drying to remove the solvent. For example, the etch-resistant layer is applied to a substrate by chemical vapor deposition (CVD). The photoresist layer thus formed is sensitive in the ultraviolet region of the electromagnetic spectrum, and especially for wavelengths of $ 365 nanometers. The image copy exposure of the photoresist composition of the present invention can be applied in many different sizes. _-42-_ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm).
訂Order
567404 A7 B7 五、發明説明(39·) 同UV波長下達成,包括但不限於365奈米、248奈米、193 奈米、157奈米及較低波長。以影像複製方式曝光,較隹係 以248奈米、193奈米、157奈米或較低波長之紫外光達成, 其更佳係以193奈米、157奈米或較低波長之紫外光達成, 且最佳係以157奈米或較低波長之紫外光達成。以影像複製 方式曝光可無論是以數值方式使用雷射或等效裝置,或以 非數值方式利用光罩達成。使用雷射之數值成像係為較佳 的。供本發明組合物數值成像之適當雷射裝置,包括但不 限於氬-氟激元雷射,使用UV輸出在193奈米下,氪-氟激 元雷射,使用UV輸出在248奈米下,及氟(F2)雷射,使用輸 出在157奈米下。如前文所討論,由於利用較低波長之^ 光供影像複製曝光,係相當於較高解析度(解析度下限), 故利用較低波長(例如193奈米或157奈米或較低)通常優於 利用較高波長(例如248奈米或較高)。 顯像 在本發明光阻組合物中之成份,必須含有足夠官能基 度γ以在影像複製曝光於UV光之後供顯像。此官能基較佳 為酸或經保護酸,以致水性顯像能夠使用鹼性顯像劑,慈 如氫氧化鈉溶液、氫氧化鉀溶液或氫氧化銨溶液。 β 例如,在本發明光阻組合咚土之聚合體(c)典型上為含酸 物質,包含至少_種含氟基醇之單體,具有以下結構單位·· -C(Rf)(Rf,)〇pj 其中Rf與Rf,為1至10個碳原子之相同或不同氟烷基,或一 起採用為(CF2)n,其中n42至⑴。酸性氟醇基團之含量, 567404 A7 B7567404 A7 B7 5. Description of the invention (39 ·) Achieved at the same UV wavelength, including but not limited to 365 nm, 248 nm, 193 nm, 157 nm and lower wavelengths. Exposure by image reproduction method, which is achieved with UV light of 248 nm, 193 nm, 157 nm, or lower wavelengths, and is better achieved with UV light of 193 nm, 157 nm, or lower wavelengths And the best is achieved with ultraviolet light of 157 nm or lower wavelength. Exposure by image reproduction can be achieved either numerically using a laser or equivalent device, or non-numerically using a photomask. Numerical imaging using lasers is preferred. Suitable laser devices for numerical imaging of the composition of the present invention include, but are not limited to, argon-fluorine lasers using UV output at 193 nm, krypton-fluorine lasers using UV output at 248 nm , And fluorine (F2) laser, use output at 157nm. As discussed earlier, because the use of lower wavelength light for image reproduction exposure is equivalent to a higher resolution (lower resolution), the use of lower wavelengths (such as 193nm or 157nm or lower) is usually Better than using higher wavelengths (eg 248 nm or higher). Development The components in the photoresist composition of the present invention must contain sufficient functionality γ for development after the image is copied and exposed to UV light. This functional group is preferably an acid or a protected acid so that an aqueous developer can use an alkaline developer such as a sodium hydroxide solution, a potassium hydroxide solution, or an ammonium hydroxide solution. β For example, the polymer (c) of the photoresist composite vermiculite of the present invention is typically an acid-containing material, containing at least one fluorine-containing alcohol-containing monomer, and has the following structural unit ... -C (Rf) (Rf, ) Pj where Rf and Rf are the same or different fluoroalkyl groups of 1 to 10 carbon atoms, or are used together as (CF2) n, where n42 to ⑴. Content of acidic fluoroalcohol groups, 567404 A7 B7
係針對特定組合物,經由使含水鹼性顯像劑中之氣好顯像 所需要之量達最佳化而測得。It is measured for a specific composition by optimizing the amount required for good development of gas in an aqueous alkaline developer.
-裝 當含水可加工處理之光阻經塗覆或以其他方式塗敷至笑 材且以影像複製方式曝露至UV光時,該光阻組合物之顯^ 可能需要的是,黏合劑物質應含有足夠量之酸基(例如氟醇 基囷)及/或經保護之酸基,其在曝光時係至少部份去除保 護,使得該光阻(或其他可光成像之塗料組合物)可在含水 驗性顯像劑中加工處理。在正性操作光阻層之情況中,光 阻層係於顯像期間,在曝露於UV輻射之部份上被移除,俨 在未曝光部份上,於顯像期間,係實質上不受影嚮,該顯 像係藉由含水鹼性液體,譬如含有0·262Ν之氫氧化四ϋ 按全水溶液(其中顯像係於251下,通常歷經低於或等^ 120秒)。&負性操作光阻層之情況中,光阻層係於顯像期 間,在未經曝露於UV輻射之部份上被移除,但於顯像期 間,在經曝光部份上,係實質上不受影嚮,該顯像係使用 無論是臨界流體或有機溶劑。 f 於本文中使用之臨界流體,係為一或多種被加熱至溫度 接近或咼於其臨界溫度,且經壓縮至壓力接近或高於其臨 界壓力之物質。在本發明中之臨界流體,'係至少在該流體 之臨界溫度下方高於15t之料,且係至少在該流體之= 界壓力下方高於5大氣壓之壓力T。二氧化碳可用於本發 明中之臨界流體。各種有機溶劑亦可在本發明中作為顯像 劑使用。纟包括但不限於齒化溶劑與非自化溶劑H容 劑係為典型的,而氟化溶劑係為更典型的。 -44--When the water-containing processable photoresist is coated or otherwise applied to the laughing material and exposed to UV light by image reproduction, it may be necessary for the photoresist composition ^ It may be necessary that the adhesive substance should be Contains a sufficient amount of acid groups (such as fluoroalcohol group) and / or protected acid groups, which are at least partially removed from protection during exposure, so that the photoresist (or other photoimageable coating composition) can be used in Processing in water-based diagnostic imaging agents. In the case where the photoresist layer is positively operated, the photoresist layer is removed during the development, and is removed on the part exposed to the UV radiation, and on the unexposed part, during the development, it is not substantially changed. In the imaging direction, the imaging is performed by using an aqueous alkaline liquid, such as tetrahydroxide containing 0.262N, and a full aqueous solution (where the imaging system is under 251, which usually takes less than or equal to 120 seconds). & In the case of a negative-acting photoresist layer, the photoresist layer is removed during the development, on a portion not exposed to UV radiation, but during the development, on the exposed portion, the Substantially unaffected, the imaging system uses either a critical fluid or an organic solvent. f Critical fluids, as used herein, are one or more substances that are heated to a temperature near or below their critical temperature and compressed to a pressure near or above their critical pressure. The critical fluid in the present invention is a material higher than 15 t at least below the critical temperature of the fluid, and a pressure T higher than 5 atmospheres at least below the fluid's boundary pressure. Carbon dioxide can be used as a critical fluid in the present invention. Various organic solvents can also be used as the developer in the present invention.纟 Including but not limited to dentified solvents and non-self-solvent solvents, H is typical, while fluorinated solvents are more typical. -44-
567404 A7 B7 五、發明説明(41.) 抗蝕刻層可藉任何已知習用方式顯像。例如,光阻層之 圖樣可經由以各向異性方式蝕刻該抗蝕刻層之經曝光區 域,而轉移至抗蝕刻層。 -45- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)567404 A7 B7 5. Description of the invention (41.) The anti-etching layer can be developed by any known conventional method. For example, the pattern of the photoresist layer can be transferred to the anti-etching layer by etching the exposed area of the anti-etching layer in an anisotropic manner. -45- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
裝 訂Binding
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25382200P | 2000-11-29 | 2000-11-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW567404B true TW567404B (en) | 2003-12-21 |
Family
ID=22961841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090129534A TW567404B (en) | 2000-11-29 | 2001-11-29 | Multilayer elements containing photoresist compositions and their use in microlithography |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1354245A2 (en) |
JP (1) | JP2004534961A (en) |
KR (1) | KR20040012689A (en) |
CN (1) | CN1486449A (en) |
AU (1) | AU2002239350A1 (en) |
TW (1) | TW567404B (en) |
WO (1) | WO2002044815A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1546222A4 (en) * | 2002-08-09 | 2007-11-07 | Du Pont | Photoresists, fluoropolymers and processes for 157 nm microlithography |
ATE460436T1 (en) * | 2002-08-09 | 2010-03-15 | Du Pont | FLUORINATED POLYMERS HAVING POLYCYCLIC GROUPS WITH ANNATED 4-MEMBED HETEROCYCLIC RINGS SUITABLE FOR USE AS PHOTORESISTS AND MICROLITHOGRAPY METHODS |
US6830871B2 (en) | 2002-08-19 | 2004-12-14 | Fuji Photo Film Co., Ltd. | Chemical amplification type resist composition |
CN101389694B (en) * | 2006-02-24 | 2013-03-27 | 路博润高级材料公司 | Polymerizable silicone copolyol macromers and polymers made therefrom |
JP7395278B2 (en) * | 2019-07-31 | 2023-12-11 | 日東電工株式会社 | Photosensitive composition, device, and device manufacturing method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0473547A1 (en) * | 1990-08-27 | 1992-03-04 | Ciba-Geigy Ag | Olefinically unsaturated onium salts |
IL141803A0 (en) * | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
KR100521301B1 (en) * | 1998-10-27 | 2005-10-14 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Photoresists and Processes for Microlithography |
KR20020012206A (en) * | 1999-05-04 | 2002-02-15 | 메리 이. 보울러 | Fluorinated Polymers, Photoresists and Processes for Microlithography |
-
2001
- 2001-11-26 CN CNA018197221A patent/CN1486449A/en active Pending
- 2001-11-26 EP EP01987101A patent/EP1354245A2/en not_active Withdrawn
- 2001-11-26 WO PCT/US2001/044295 patent/WO2002044815A2/en not_active Application Discontinuation
- 2001-11-26 KR KR10-2003-7007137A patent/KR20040012689A/en not_active Application Discontinuation
- 2001-11-26 AU AU2002239350A patent/AU2002239350A1/en not_active Abandoned
- 2001-11-26 JP JP2002546918A patent/JP2004534961A/en active Pending
- 2001-11-29 TW TW090129534A patent/TW567404B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1354245A2 (en) | 2003-10-22 |
WO2002044815A3 (en) | 2003-08-14 |
CN1486449A (en) | 2004-03-31 |
WO2002044815A2 (en) | 2002-06-06 |
JP2004534961A (en) | 2004-11-18 |
KR20040012689A (en) | 2004-02-11 |
AU2002239350A1 (en) | 2002-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4484603B2 (en) | Topcoat composition | |
TW591338B (en) | Bases and surfactants and their use in photoresist compositions for microlithography | |
KR20060048862A (en) | Composition for photoresist protective film, photoresist protective film and photoresist pattern formation process | |
TW200403315A (en) | Anti-reflective coating composition and pattern forming method | |
TW565744B (en) | Polymers blends and their use in photoresist compositions for microlithography | |
TW200403262A (en) | Fluorinated polymers, photoresists and processes for microlithography | |
TW200526692A (en) | Method of forming laminated resist | |
TW567404B (en) | Multilayer elements containing photoresist compositions and their use in microlithography | |
JP2004256562A (en) | Fluorine-containing compound, polymerizable fluorine-containing monomer, fluorine-containing polymer compound, resist material using them, pattern formation method, and production method for fluorine-containing compound | |
EP1298491B1 (en) | Resist composition | |
TW200401164A (en) | Photoresist compositions | |
TW561310B (en) | Photoresist element and process for improved lithographic patterning of a photoresist element | |
US7205086B2 (en) | Multilayer elements containing photoresist compositions and their use in microlithography | |
JP2001350265A (en) | Resist composition | |
US20040013971A1 (en) | Antireflective layer for use in microlithography | |
JPH06110199A (en) | Antireflection film and formation of resist pattern | |
JP2007056134A (en) | Resist-protecting film | |
JPWO2004035641A1 (en) | Method for producing fluoropolymer and photoresist composition | |
JP4190296B2 (en) | Fluorine-containing copolymer using fluorine-containing vinyl ether, and resist material using fluorine-containing copolymer | |
TW200403257A (en) | Fluorinated polymers useful as photoresists, and processes for microlithography | |
KR20040095243A (en) | Fluorinated Copolymers for Microlithography |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |