TW591338B - Bases and surfactants and their use in photoresist compositions for microlithography - Google Patents

Bases and surfactants and their use in photoresist compositions for microlithography Download PDF

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TW591338B
TW591338B TW090129535A TW90129535A TW591338B TW 591338 B TW591338 B TW 591338B TW 090129535 A TW090129535 A TW 090129535A TW 90129535 A TW90129535 A TW 90129535A TW 591338 B TW591338 B TW 591338B
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Taiwan
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group
polymer
ethylenically unsaturated
carbon atoms
unsaturated compound
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TW090129535A
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Chinese (zh)
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Larry L Berger
Michael Karl Crawford
Frank L Schadt Iii
Fredrick Claus Zumsteg Jr
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Du Pont
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)

Abstract

A photoresist composition having: (A) a polymer selected from the group consisting of: (a) a fluorine-containing copolymer having a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: -C(Rf)(Rf')OH, wherein Rf and Rf' are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CX2=CY2 where X=F or CF3 and Y=-H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2=CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; (B) at least one photoactive component; and (C) a functional compound selected from the group consisting of a base and a surfactant. The polymer may have an absorption coefficient of less than about 5.0 mum<-1> at a wavelength of about 157 nm. These photoresist compositions have improved imaging properties.

Description

591338 A7 --—__________ B7 五、發明説明(1 ^ -- 璧L明背景 發明範圍 本發明# _於光成相’且特別是光阻(正性操作及/或 負性操作)在半導體元件製造上對於成像之用途。本發明 亦關於新顆驗與界面活性劑,其彳與具有高uv透明性(特 別疋在短波長丁 ’例如157奈米與193奈米)之聚合體組合 物一起使用’且其可在光阻中及潛在地在許多其他應用 中使用。 發明背景 聚合體產物係作為成像與光敏系統之成份使用,且特別 是在光成相系統中,譬如在微影蝕别術簡介第二版L p Thompson,C· G. Willson 及 M j B〇wden,美國化學學會(Washingt〇n, DC),1994中所述者。在此種系統中,紫外光(UV)或其他電 磁輻射係碰撞在一種含有光活性成份之物質上,以在該 物質中引致物理或化學變化。於是產生可使用或潛在影 像’可將其處理成供半導體元件製造之有用影像。 雖然此聚合體產物本身可為光活性,但通常光敏性組合 物除了聚合體產物以外,係含有一或多種光活性成份。 在曝露於電磁輻射(例如UV光)時,光活性成份係用以改 乂光敏性組合物之流變狀態、溶解度、表面特徵、折射 率、顏色、電磁特徵或其他此種物理或化學特徵,如在 Thompson等人,如前文之出版物中所述者。 為在半導體元件中,於亞微米程度下,使極微細表面特 徵成像,在遠或極端紫外光(UV)中之電磁輻射是必須的。 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) A7 B7 五、發明説明(2 ) 正性操作光阻通常係被使用於半導體製造上。在UV中, 於365奈米(I-線)下,使用酚醛清漆聚合體與重氮基寨g昆作 為溶解抑制劑之蝕刻術,係為目前已建立之晶片技術, 具有解析極限為約0.35-0.30微米。在遠UV中,於248奈米 下,使用對-羥基苯乙烯聚合體之蝕刻術,係為已知且具 有解析極限0.35-0.18奈米。對於未來在又更短波長下之光 蚀刻術有強烈原動力’此係由於隨著降低波長而降低解 析度下限(意即’對193奈米成像之解析極限為〇18-〇12微 米,而對157奈米成像之解析極限為約〇.〇7微米)。使用193 奈米曝光波長(得自氬氟(ArF)激元雷射)之光蝕刻術,係為 未來使用0.18與0.13微米設計規則之微電子工業製造之前 導候選者。使用157奈米曝光波長(得自氟激元雷射)之光 蚀刻術,係為進一步在目前水平外之未來微影蝕刻術(超 過193奈米)之前導候選者,其條件是可發現在此極短波長 下具有足夠透明性及其他所需性質之適當物質。傳統近 UV與遠UV有機光阻,在193奈米或較短波長下之不透明 性’係阻止其在單層體系中,於此等短波長下之用途。 但是,仍需要對單層光阻滿足種種要求條件之光阻組合 物,其包括在193奈米及/或157奈米下之光學透明性、電 装蚀刻抵抗性及在含水驗顯像劑中之溶解度,且又符合 所需要漸增要求之成像性質。 於正色調光阻中,對於經改良之解析,有不斷之需求。— 先前對於此種以化學方式放大之光阻,已發現添加少量 鹼可顯著地改良各種成像性質,譬如解析、影像分佈、 -6 - 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ 297公釐) 591338 A7 ____B7_ 1、發明説明(3~— 聚焦深度及加工處理寬容度。一般認為其係藉由控制酸 (經由光酸發生劑之曝光而產生)之擴散至未經曝光或經不 良曝光之區域而發生。先前亦已發現被添加至光阻配方 中之界面活性劑,可改良此種光阻組合物之可塗覆性及 /或可顯像能力,導致經改良之成像性質。 發明楠遑 本發明係將驗及/或界面活性劑在光阻配方中之用途, 與被發現在低波長下,典型上係在於或低於約193奈米 下,更典型上係在於或低於約157奈米下為光學上透明之 物質合併。 在第一方面,本發明係提供一種光阻組合物,其包含: (A)至少一種聚合體,選自包括: ⑷含氣共聚物,其包含衍生自至少一種乙婦系不 飽和化合物之重複單位,其特徵在於該至少一種乙烯 系不飽和化合物為多環狀; (b) 含有經保護酸基之分枝狀聚合體,該聚合體包 含一或多個分枝鏈段,以化學方式沿著線性主鏈段連 接; (c) 氟聚合體,具有至少一個具有以下結構之氟醇 基:591338 A7 --- __________ B7 V. Description of the invention (1 ^-璧 Lming background invention scope of the invention # _ 于 光 成 相 'and especially photoresistance (positive operation and / or negative operation) in semiconductor components Manufacturing uses for imaging. The present invention also relates to new particles and surfactants, which are used together with polymer compositions having high UV transparency (especially at short wavelengths such as 157 nm and 193 nm). Use 'and it can be used in photoresist and potentially in many other applications. BACKGROUND OF THE INVENTION Polymer products are used as components of imaging and photosensitive systems, and especially in photophase systems, such as lithographic etching. Introduction to L2 Thompson, CC G. Willson, and Mj Bowden, American Chemical Society (Washington, DC), 1994. In this type of system, ultraviolet (UV) or Other electromagnetic radiation impinges on a substance containing a photoactive component to cause physical or chemical changes in the substance. A usable or potential image is then generated that can be processed into a useful image for the manufacture of semiconductor components. The combination product itself may be photoactive, but in general, the photosensitive composition contains one or more photoactive components in addition to the polymer product. The photoactive components are used to modify the photosensitivity when exposed to electromagnetic radiation (such as UV light). Rheological state, solubility, surface characteristics, refractive index, color, electromagnetic characteristics, or other such physical or chemical characteristics, as described in Thompson et al., As described in previous publications. In semiconductor devices At the sub-micron level, it is necessary to image extremely fine surface features, and electromagnetic radiation in far or extreme ultraviolet (UV) light is necessary. -5- This paper size applies to China National Standard (CNS) A4 (210 X 297) (Mm) A7 B7 V. Description of the invention (2) Positive operation photoresist is usually used in semiconductor manufacturing. In UV, under 365nm (I-line), novolac polymer and diazo group are used. The etching technique of Zhaig Kun as a dissolution inhibitor is a wafer technology that has been established at present, with an analytical limit of about 0.35-0.30 microns. In far UV, at 248 nm, the use of p-hydroxystyrene polymer Etching, which is known and has an analytical limit of 0.35-0.18 nm. There is a strong motive force for future photoetching at even shorter wavelengths. This is because the lower resolution limit is reduced as the wavelength is reduced (meaning 'yes The resolution limit for imaging at 193 nm is 0.018 μm, and the resolution limit for imaging at 157 nm is about 0.07 μm. The exposure wavelength of 193 nm (from argon fluoride (ArF) excimer thunder) is used. Photolithography is a future candidate for the microelectronics industry using 0.18 and 0.13 micron design rules. Photolithography using a 157nm exposure wavelength (derived from a fluorine excimer laser) is a further step Future candidates for lithography (above 193 nm) beyond the current level, provided that suitable substances with sufficient transparency and other required properties at this extremely short wavelength can be found. The traditional near-UV and far-UV organic photoresistors' opacity at 193 nm or shorter wavelengths prevents their use in single-layer systems at these short wavelengths. However, there is still a need for a photoresist composition that meets various requirements for a single layer of photoresist, including optical transparency at 193 nm and / or 157 nm, resistance to electrical etching, and resistance in aqueous inspection imaging agents. Solubility, and in line with the required imaging properties. In the positive-tone photoresist, there is a constant demand for improved analysis. — Previously, for this kind of chemically amplified photoresist, it has been found that the addition of a small amount of alkali can significantly improve various imaging properties, such as resolution, image distribution, -6-This paper scale applies the Chinese National Standard (CNS) A4 specification (21〇 χ 297 mm) 591338 A7 ____B7_ 1. Description of the invention (3 ~ —focus depth and processing latitude. It is generally considered that it is controlled by the diffusion of acid (produced by exposure of photoacid generator) to unexposed or Occurs in poorly exposed areas. Surfactants that have been previously added to photoresist formulations have been found to improve the coatability and / or developability of such photoresist compositions, resulting in improved imaging The invention is based on testing and / or the use of surfactants in photoresist formulations, and is found at low wavelengths, typically at or below about 193 nm, and more typically at Or less than about 157 nanometers is a combination of optically transparent substances. In a first aspect, the present invention provides a photoresist composition comprising: (A) at least one polymer selected from the group consisting of: 气 gas-containing copolymerization Comprising repeating units derived from at least one ethylenically unsaturated compound, characterized in that the at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing a protected acid group, the polymerizing The body contains one or more branched segments that are chemically connected along the linear main segment; (c) a fluoropolymer having at least one fluoroalcohol group having the following structure:

-C(Rf)(Rf,)〇H 其中Rf與Rf·為1至約1〇個碳原子之相同或不同氟烷基, 或一起採用為(CF2 )n,其中η為2至約10 ; ⑷全氟(2&gt;二甲基-ΐ,3-二氧伍圜烯)或CXfCY2之非 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公 装 訂-C (Rf) (Rf,) 0H wherein Rf and Rf · are the same or different fluoroalkyl groups of 1 to about 10 carbon atoms, or are used together as (CF2) n, where η is 2 to about 10; ⑷Perfluoro (2 &gt; dimethyl-fluorene, 3-dioxolene) or CXfCY2 is not applicable to the Chinese paper standard (CNS) A4 (210X297 public binding)

線 591338 A7 B7 五、發明説明(4 晶形乙缔基均聚物,其中X = F或CF3,且γ = -Η,或全 氟(2,2-二甲基-1,3-二氧伍圜烯)與之非晶形乙缔 系共聚物;及 (e)含如/氟基醇之聚合體,製自經取代或未經取 代之乙烯基醚;及 (B) 至少一種光活性成份;及 (C) 功能性化合物,選自包括鹼與界面活性劑。 於第二方面,本發明係提供一種製備光阻影像於基材上 之方法,其包括以下順序: (X) 使光阻層以影像複製方式曝光,以形成經成像與未 經成像區域,其中光阻層係製自一種光阻組合物,其 包含: (A) 至少一種選自上述⑷-⑷之聚合體; (B) —種光活性成份;及 (C) 一種功能性化合物,選自包括鹼與界面活性 劑;及 (Y) 使具有經成像與未經成像區域之經曝光光阻層顯 像,以形成浮凸影像在基材上。 此鹼可具有約5或較大之PKa。此鹼可選自包括至少一種 單體性氮化合物、聚合氮化合物、有機胺、有機氫氧化 銨及其與有機酸之鹽。 此界面活性劑可具有陽性、陰性或中性電荷,並可選自 包括經氟化或未經氟化之界面活性劑。 較佳具碰膏施例之禅逄 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 裝 訂 線 乃1338 A7 ___B7 五、發明説明(5 ) 此光阻元件包括一個載體與至少一個光阻層;其中光阻 層係製自一種光阻組合物,其包含: (A) 選自包括上述(a)至(e)之聚合體,及其混合物; (B) 光活性成份;及 (C)選自包括鹼與界面活性劑之功能性化合物。 此等(A)聚合體係作為半導體蚀刻術之光阻組合物使 用。特定言之,因為低於193奈米之低光學吸收,係為本 發明材料之首要特質,故其在此波長下應具有特別利用 性。此等聚合體在約157奈米之波長下,不需要但可具有 低於約5.0微米-1之吸收係數,典型上係於此波長下低於 約4.0微米M,且更典型上,於此波長下係低於約3 5微米_ 1 〇 (A)聚合體: 含氟共聚物(a)包含衍生自至少一種乙烯系不飽和化合物 之重複單位,其特徵在於該至少一種乙烯系不飽和化合 物係為多環狀。共聚物⑷係選自包括: (al) —種含氟共聚物,其包含衍生自至少一種乙烯系不 飽和化合物之重複單位,其特徵在於至少一種乙烯系不 飽和化合物係為多環狀,且至少一種其他乙婦系不飽和 化合物含有至少一個氟原子,以共價方式連接至乙烯系 不飽和碳原子;及 (a2) —種含氟共聚物,其包含衍生自至少一種多環狀乙 烯系不飽和化合物之重複單位,該化合物含有至少一個 氟原子、全氟坑基及全氟燒氧基,其係以共價方式連接 -9 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Line 591338 A7 B7 V. Description of the invention (4 crystalline ethylenic homopolymer, where X = F or CF3, and γ = -Η, or perfluoro (2,2-dimethyl-1,3-dioxo Limonene) and amorphous ethylene-based copolymers thereof; and (e) polymers containing, for example, / fluoro alcohols, made from substituted or unsubstituted vinyl ethers; and (B) at least one photoactive component; And (C) a functional compound selected from the group consisting of a base and a surfactant. In a second aspect, the present invention provides a method for preparing a photoresist image on a substrate, including the following sequence: (X) making a photoresist layer Exposure by image copying to form imaged and unimaged areas, wherein the photoresist layer is made from a photoresist composition comprising: (A) at least one polymer selected from the above-mentioned ⑷-⑷; (B) -A photoactive component; and (C) a functional compound selected from the group consisting of a base and a surfactant; and (Y) developing an exposed photoresist layer with imaged and unimaged areas to form relief The image is on a substrate. This base may have a pKa of about 5 or greater. This base may be selected from the group consisting of at least one monomeric nitrogen compound Polymeric nitrogen compounds, organic amines, organic ammonium hydroxide, and salts with organic acids. This surfactant can have a positive, negative, or neutral charge and can be selected from fluorinated or unfluorinated surfactants 。 The best Zen Chan with bumper application -8- This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm). The binding line is 1338 A7 ___B7 5. Description of the invention (5) This photoresistive element It includes a carrier and at least one photoresist layer; wherein the photoresist layer is made from a photoresist composition, which comprises: (A) selected from a polymer including the above (a) to (e), and a mixture thereof; (B ) Photoactive ingredients; and (C) selected from functional compounds including alkalis and surfactants. These (A) polymerization systems are used as photoresist compositions for semiconductor etching. In particular, because it is less than 193 nm The low optical absorption is the primary characteristic of the material of the present invention, so it should have special utility at this wavelength. These polymers are not required at the wavelength of about 157 nanometers, but can have less than about 5.0 microns- Absorption coefficient of 1, typically at this wavelength Below about 4.0 microns M, and more typically, at this wavelength is less than about 35 microns_ 10 (A) Polymer: The fluorocopolymer (a) comprises a polymer derived from at least one ethylenically unsaturated compound The repeating unit is characterized in that the at least one ethylenically unsaturated compound is polycyclic. The copolymer is selected from the group consisting of: (al) a fluorinated copolymer comprising one derived from at least one ethylenically unsaturated compound A repeating unit, characterized in that at least one ethylenically unsaturated compound is polycyclic, and at least one other ethylenic unsaturated compound contains at least one fluorine atom, covalently attached to the ethylenically unsaturated carbon atom; and ( a2)-a fluorinated copolymer comprising repeating units derived from at least one polycyclic ethylenically unsaturated compound, the compound containing at least one fluorine atom, a perfluorinated group and a perfluorinated oxy group, which are co- Price connection-9-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 訂Binding

k 591338 A7 B7 五、發明説明(6 ) 至碳原子,此碳原子係被包含在環結構内,並與乙晞系 不飽和化合物之各乙烯系不飽和碳原子藉由至少一個以 共價方式連接之碳原子分隔。 揭示於(al)中之至少一種乙烯系不飽和化合物,可選自 包括:k 591338 A7 B7 V. Description of the invention (6) to carbon atoms, this carbon atom system is contained in the ring structure, and each ethylenically unsaturated carbon atom of the ethylenic unsaturated compound is covalently formed by at least one The connected carbon atoms are separated. The at least one ethylenically unsaturated compound disclosed in (al) may be selected from the group consisting of:

(I) R11R12)a(I) R11R12) a

(K)(K)

裝 訂Binding

線 其中: -10- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) A7 B7 -—— 五、發明説明(7 ) 各m與n為〇、丨或2,p為至少3之整數; a與b係獨立為1至3,惟當b = 2時,a不=1,或反之亦 然; R1至Rb均為相同或不同,且各表示氫原子,鹵原子, 含有1至14個碳原子之烴基,典型上為1至1〇個碳原子, 視情況被至少一個〇、N、S、P或鹵原子取代,例如幾 基,譬如二級或三級烷基羧酸基或羧酸酯基; R1 5為約4至20個碳原子之飽和烷基,視情沉含有一或多 個_氧,其附帶條件是碳原子對氫原子之比例係大於或 等於0.58 ; R16至R21各獨立為氫原子、C#C12烷基、(CH^CC^A、 C02 (CH2 )q C02 A或C02 A,其中q為1至12,且A為氫或酸保 護基,其附帶條件是Ri8至R2 1中至少一個為C〇2 A。 本發明共聚物(及包含此等共聚物之光阻)之一項關鍵特 徵’係為多環狀重複單位與相同或不同之含氟重複單 位’及再者與在共聚物中不含芳族官能基之所有重複單 位之協力組合。為使共聚物對電漿蝕刻(例如反應性離子 蚀刻)具有高抵抗性,則多環狀重複單位存在於共聚物中 是很重要的。多環狀重複單位亦傾向於提供高玻璃轉移 溫度’這對於保持光阻薄膜上之尺寸安定性是很重要 的。為使共聚物具有高光學透明性,意即在極端及遠uv 中具有低光學吸收,則含氟重複單位之存在是很重要一 的。為使聚合體具有高光學透明性,亦需要在共聚物之 重複單位中不存在芳族官能基。 -11 - 本紙張尺度適用中國國家標準(CNS)八4規_格(21〇父297公釐)----- 591338 A7 _____ B7 ___ 五、發明説明(8 ) 在本發明之某些具體實施例中,含氟共聚物可包含衍生 自至少一種多環狀乙烯系不飽和化合物之重複單位,該 化合物具有至少一個原子或基團,選自包括氟原子、全 氟烷基及全氟烷氧基,以共價方式連接至被包含在環結 構内之碳原子。氟原子、全氟坑基及全氟燒氧基,當此 種基團直接連接至乙烯系不飽和碳原子時,其傾向於抑 制環狀乙烯系不飽和化合物藉由金屬催化加成聚合或複 分解聚合之聚合反應。因此,在此種情況中重要的是, 該至少一個氟原子、全氟烷基及全氟烷氧基,係與乙烯 系不飽和化合物之各乙婦系不飽和碳原子,被至少一個 以共價方式連接之碳原子分隔。再者,使此原子及/或 基團直接連接至環,會使不想要之未經氟化脂族碳原子 之存在降至最低。 本發明共聚物令人驚訝地具有平衡性質,這對於賦予半 導體應用之光阻組合物之必要性質’是很重要的。首 先,於極端及遠UV中,包括193奈米與157奈米波長,此 等共聚物具有令人意外地低之光學吸收。使共聚物具有 低光學吸收,對於調配高光速度光阻是很重要的,其中 大部份量之UV光係被光活性成份吸收,且不會由於被共 聚物(光阻之基質)吸收而損失。其次,包含本發明含氟聚 合體之光阻,係令人滿意地顯示極低電漿蝕刻速率。此 後述性質在獲得半導體製造中所需要之高解析精密度光〜 阻上,是很重要的。同時達成此等性質之適當值,對於 在157奈米下成像,是特別重要的。於此情況中,需要超 -12 · 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公釐) ~ -- 裝 玎Among the lines: -10- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 ----- V. Description of the invention (7) Each m and n are 0, 丨 or 2, and p is An integer of at least 3; a and b are independently 1 to 3, but when b = 2, a is not = 1, or vice versa; R1 to Rb are all the same or different, and each represents a hydrogen atom, a halogen atom, Hydrocarbyl groups containing 1 to 14 carbon atoms, typically 1 to 10 carbon atoms, optionally substituted with at least one 0, N, S, P or halogen atom, such as several groups, such as secondary or tertiary alkyl groups Carboxylic acid group or carboxylic acid ester group; R1 5 is a saturated alkyl group of about 4 to 20 carbon atoms, and optionally contains one or more _ oxygen, with the proviso that the ratio of carbon atoms to hydrogen atoms is greater than or equal to 0.58; R16 to R21 are each independently a hydrogen atom, a C # C12 alkyl group, (CH ^ CC ^ A, C02 (CH2) q C02 A or C02 A, where q is 1 to 12, and A is a hydrogen or acid protecting group , With the proviso that at least one of Ri8 to R2 1 is C02 A. A key feature of the copolymer of the present invention (and the photoresist containing these copolymers) is that the polycyclic repeating unit is the same or different Fluorine repeating units' and furthermore, a synergistic combination with all repeating units that do not contain aromatic functional groups in the copolymer. In order to make the copolymer highly resistant to plasma etching (such as reactive ion etching), more The presence of cyclic repeating units in the copolymer is important. Polycyclic repeating units also tend to provide a high glass transition temperature, which is important for maintaining dimensional stability on the photoresist film. In order for the copolymer to have high Optical transparency, meaning low optical absorption in extreme and far UV, the existence of repeating units containing fluorine is very important. In order to make the polymer have high optical transparency, it is also necessary to avoid repeating units in the copolymer. Aromatic functional groups exist. -11-This paper size applies to China National Standards (CNS) Regulation 8 (21 ° father 297 mm) ----- 591338 A7 _____ B7 ___ V. Description of the invention (8) In certain embodiments of the present invention, the fluorinated copolymer may include repeating units derived from at least one polycyclic ethylenically unsaturated compound, the compound having at least one atom or group selected from the group consisting of fluorine atoms, Fluoroalkyl and perfluoroalkoxy groups are covalently attached to the carbon atoms contained in the ring structure. Fluorine, perfluorinated, and perfluorinated oxy, when such groups are directly connected to the vinyl system When unsaturated carbon atoms, it tends to inhibit the polymerization reaction of cyclic ethylenically unsaturated compounds by metal-catalyzed addition polymerization or metathesis polymerization. Therefore, in this case, it is important that the at least one fluorine atom, perfluoro Alkyl and perfluoroalkoxy are each ethylenically unsaturated carbon atom of an ethylenically unsaturated compound, separated by at least one carbon atom covalently connected. Furthermore, having this atom and / or group directly attached to the ring minimizes the presence of unwanted unfluorinated aliphatic carbon atoms. The copolymers of the present invention have surprisingly balanced properties, which is important for imparting the necessary properties &apos; to photoresist compositions for semiconductor applications. First, these copolymers have surprisingly low optical absorption in extreme and extreme UV, including 193 nm and 157 nm wavelengths. Making the copolymer with low optical absorption is very important for the deployment of high light speed photoresist. Most of the UV light is absorbed by the photoactive component and will not be lost by the copolymer (the substrate of the photoresist). . Secondly, the photoresist containing the fluorine-containing polymer of the present invention satisfactorily exhibits an extremely low plasma etching rate. The properties described later are important to obtain the high-resolution precision photoresistance required in semiconductor manufacturing. Achieving appropriate values for these properties at the same time is particularly important for imaging at 157 nm. In this case, it is necessary to exceed -12 · This paper size is applicable to China National Standard (CNS) A4 specification (21 × 297 mm) ~-Loading

591338 A7 B7 五、發明説明(9 ) 薄光阻,以提供高解析度,但此等薄光阻必須是高度蝕 刻抵抗性,以致使光阻留在已成像之基材上,並在蝕刻 期間保護其下方基材之區域。 在本發明之較佳具體實施例中,此光阻組合物包含共聚 物,其包含衍生自至少一種多環狀共單體(意即,包含至 少兩個環之共單體,例如正福烯)之重複單位。這是重要 的,有三個主要理由:1)多環狀單體具有相對較高碳對氫 比例(C : H),其會造成由此等多環狀單體之重複單位所組 成之基料聚合體,一般性地具有良妤電漿蝕刻抵抗性;2) 具有衍生自多環狀單體之重複單位之聚合體,其較佳可 在聚合時經完全飽和,其通常具有良好透明特性;及3)製 自多環狀單體之聚合體經常具有相對較高玻璃轉移溫 度,以提供加工處理期間之經改良尺寸安定性。乙烯系 不飽和基團可被包含在多環狀部份基團内,如在正福烯 中,或可懸垂至多環狀部份基團,如在1-金剛烷羧酸乙烯 酯中。包含衍生自多環狀共單體之重複單位,具有高C : Η比例之聚合體,具有相對較低Ohnishi值(O.N.),其中: O.N. =N/(NC-N0) 其中N為在聚合體重複單位中之原子數,Ne為在聚合體重 複單位中之碳原子數,及N。為在聚合體重複單位中之氧 原子數。有一個由Ohnishi等人所發現之經驗法則 (J. Electrochem. Soc·,Solid-State Sci· Technol” 130, 143 (1983)),其陳 述聚合體之反應性離子蝕刻(RIE)速率係為Ohnishi值(O.N.)之 線性函數。以下述作為一項實例,聚(正葙烯)具有化學式 -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)591338 A7 B7 V. Description of the Invention (9) Thin photoresistors to provide high resolution, but these thin photoresists must be highly etch resistant so that the photoresist stays on the imaged substrate and protects the underlying substrate during etching Area of wood. In a preferred embodiment of the present invention, the photoresist composition comprises a copolymer comprising a comonomer derived from at least one polycyclic comonomer (that is, a comonomer comprising at least two rings, such as n-furene ) Of the repeating unit. This is important for three main reasons: 1) Polycyclic monomers have a relatively high carbon-to-hydrogen ratio (C: H), which can cause a base material consisting of repeating units of such polycyclic monomers Polymers, generally with good resistance to plasma etching; 2) Polymers with repeating units derived from polycyclic monomers, which are preferably fully saturated during polymerization, and generally have good transparency characteristics; And 3) Polymers made from polycyclic monomers often have relatively high glass transition temperatures to provide improved dimensional stability during processing. The ethylenically unsaturated group may be contained in a polycyclic partial group, such as in n-furene, or may be dangling to a polycyclic partial group, such as in vinyl 1-adamantanecarboxylate. Contains repeating units derived from polycyclic comonomers, a polymer with a high C: Η ratio, and a relatively low Ohnishi value (ON), where: ON = N / (NC-N0) where N is the polymer The number of atoms in the repeating unit, Ne is the number of carbon atoms in the repeating unit of the polymer, and N. Is the number of oxygen atoms in the polymer repeat unit. There is a rule of thumb discovered by Ohnishi et al. (J. Electrochem. Soc ·, Solid-State Sci · Technol "130, 143 (1983)), which states that the reactive ion etching (RIE) rate of the polymer is Ohnishi The linear function of the value (ON). Take the following as an example, poly (n-pinene) has the chemical formula -13- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)

k 591338 A7 ______B7_ _ 五、發明説明(10 ) 為聚(C7H10)且0·Ν· = 17/7 = 2.42。主要由碳與氫所組成,具 有多環狀部份基團及相對極少含氧官能基之聚合體,具 有相對較低0·Ν·,且根據〇hnishi之經驗法則,具有相當低 (在近似線性方式中)RIE速率。 正如熟諳聚合體技藝者所習知,乙烯系不飽和化合物係 進行自由基聚合反應,而得具有衍生自乙晞系不飽和化 合物之重複單位之聚合體。明確言之,進行自由基聚合 反應之具有以下結構之乙烯系不飽和化合物:k 591338 A7 ______B7_ _ 5. The description of the invention (10) is poly (C7H10) and 0 · N · = 17/7 = 2.42. Polymers mainly composed of carbon and hydrogen, with polycyclic partial groups and relatively few oxygen-containing functional groups, have relatively low 0 · N ·, and according to the rule of thumb of OHhnishi, have a relatively low (in approximate In linear mode) RIE rate. As is known to those skilled in the art of polymer polymerization, ethylenically unsaturated compounds undergo radical polymerization to obtain polymers having repeating units derived from ethylenic unsaturated compounds. Specifically, an ethylenically unsaturated compound having the following structure undergoing a radical polymerization reaction:

係獲得具有以下重複單位之聚合體:To obtain a polymer with the following repeating units:

其中P、Q、S及T可獨立表示但不限於η、F、Cl、Br, 含有1至14個碳原子之烷基,含有6至14個碳原子之芳 基、芳烷基,或含有3至14個碳原子之環烷基。 若只有一種乙烯系不飽和化合物進行聚合反應,則所形 成之聚合體為均聚物。若兩種或多種不同乙缔系不飽和 化合物進行聚合反應,則所形成之聚合體為共聚物。 乙烯系不飽和化合物及其相應重複單位之一些代表性實 一 例,係示於下文:Among them, P, Q, S and T can be independently represented but not limited to η, F, Cl, Br, an alkyl group containing 1 to 14 carbon atoms, an aryl group containing 6 to 14 carbon atoms, an aralkyl group, or containing A cycloalkyl group of 3 to 14 carbon atoms. If only one type of ethylenically unsaturated compound is polymerized, the polymer formed is a homopolymer. If two or more different ethylenically unsaturated compounds are polymerized, the polymer formed is a copolymer. Some representative examples of ethylenically unsaturated compounds and their corresponding repeating units are shown below:

〆\ . W -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 B7 五、發明説明(11 ) Η \ C = C / Η〆 \. W -14- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 591338 A7 B7 V. Description of the invention (11) Η \ C = C / Η

\ CH3 Η Η\ CH3 Η Η

、CH3, CH3

在下文段落中,本發明之光阻組合物係以其成份部份為 觀點進行描述。 裝 訂In the following paragraphs, the photoresist composition of the present invention is described from the viewpoint of its component parts. Binding

本發明之光阻包含一種含氟共聚物,其包含衍生自至少 一種乙烯系不飽和化合物之重複單位,其特徵在於至少 一種乙烯系不飽和化合物為多環狀,且至少一種乙婦系 不飽和化合物含有至少一個氟原子,以共價方式連接至 乙烯系不飽和碳原子。適用於本發明含氟共聚物之代表 性乙烯系不飽和化合物,包括但不限於四氟乙婦、氣三 氟乙烯、六氟丙烯、三氟乙烯、二氟亞乙烯、氟乙烯、 全氟-(2,2-二甲基-1,3-二氧伍圜婦)、全氟-(2·亞甲基冰甲基-1,3-二氧伍圜)、CF2=CFO(CF2)tCF=CF2,其中 t 為 1 或 2,及 RfOCF==CF2,其中Rf為1至約10個碳原子之飽和氟烷基。本 發明之含氟共聚物可包含任何整數之其他含氣共單體, 其包括但不限於前文所列示者。較佳共單體為四氟乙 烯、氯三氟乙烯、六氟丙烯、三氟乙烯及Rf 〇CF=CF2,其 中1^為1至約10個碳原子之飽和氟烷基。更佳共單體為四 氟乙烯、氣三氟乙婦、六氟丙烯及RfOCF=CF2,其中Rf為1 至約10個碳原子之飽和全氟烷基。最佳共單體為四氟乙 缔與氯三氟乙晞。 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 591338 A7The photoresist of the present invention comprises a fluorinated copolymer comprising repeating units derived from at least one ethylenically unsaturated compound, characterized in that at least one ethylenic unsaturated compound is polycyclic and at least one ethylenic unsaturated The compound contains at least one fluorine atom and is covalently linked to an ethylenically unsaturated carbon atom. Representative ethylene-based unsaturated compounds suitable for the fluorinated copolymers of the present invention include, but are not limited to, tetrafluoroethane, trifluoroethylene, hexafluoropropylene, trifluoroethylene, difluoroethylene, vinyl fluoride, and perfluoro- (2,2-dimethyl-1,3-dioxin), perfluoro- (2.methylene methyl-1,3-dioxin), CF2 = CFO (CF2) tCF = CF2, where t is 1 or 2, and RfOCF == CF2, where Rf is a saturated fluoroalkyl group of 1 to about 10 carbon atoms. The fluorine-containing copolymer of the present invention may include any integer other gas-containing comonomer, including but not limited to those listed above. Preferred comonomers are tetrafluoroethylene, chlorotrifluoroethylene, hexafluoropropylene, trifluoroethylene, and RfCF = CF2, where 1 ^ is a saturated fluoroalkyl group of 1 to about 10 carbon atoms. More preferred comonomers are tetrafluoroethylene, trifluoroethylene, hexafluoropropylene, and RfOCF = CF2, where Rf is a saturated perfluoroalkyl group of 1 to about 10 carbon atoms. The best comonomers are tetrafluoroethylene and chlorotrifluoroacetamidine. -15- This paper size is applicable to China National Standard (CNS) A4 (210X297mm) 591338 A7

本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 訂Binding

線 591338 A7Line 591338 A7

具有結構Μ之代表性共單體,包括但不限於:Representative comonomers with structure M, including but not limited to:

包含具有結構Κ、L及Μ共單體之所有本發明共聚物, 其特徵為包含氟化烯烴與式CH2=CH02CR22之乙烯基酉旨 類’或式CH2=CHOCH2R22或ch2=chor22之乙烯基醚類,其 中R22為約4至20個碳原子之烴基,其中c : Η比例相對較 高,且其係大於0.58,因為高C : Η比例相當於良好電漿蚀 刻抵抗性(這與包含氟化婦烴及式CH2 =CH02 CR2 3之乙烯基 酯類,或式CH2=CHOCH2R23或ch2=chor23之乙烯基醚類之 共聚物大不相同,其中R23具有c : Η比例相對較低,且低 於0.58。R22與R23係選自烷基、芳基、芳烷基及環烷基。) 具有結構Ν之代表性共單體,包括但不限於:All copolymers according to the invention comprising comonomers of the structures K, L and M are characterized by the inclusion of fluorinated olefins and vinyl ethers of the formula CH2 = CH02CR22 or vinyl ethers of the formula CH2 = CHOCH2R22 or ch2 = chor22 Type, where R22 is a hydrocarbon group of about 4 to 20 carbon atoms, where the ratio of c:: is relatively high, and its ratio is greater than 0.58, because the high C:: ratio is equivalent to good plasma etching resistance (this is related to the Women's hydrocarbons and vinyl esters of the formula CH2 = CH02 CR2 3, or copolymers of vinyl ethers of the formula CH2 = CHOCH2R23 or ch2 = chor23 are very different, in which R23 has a relatively low c: Η ratio, and is lower than 0.58. R22 and R23 are selected from the group consisting of alkyl, aryl, aralkyl, and cycloalkyl.) Representative comonomers having structure N, including but not limited to:

-17- ^紙張尺度4用中國國家標準(CNS) Α4規格(210 X 297公釐)-17- ^ China National Standard (CNS) Α4 size for paper size 4 (210 X 297 mm)

其中 A = H,(CH3)3C,(〇^)3Si。 ‘在上述較佳具體實施例中, 糾么仏人, T 具有至少一種結構Η-Ν之不 二#為第二種列舉之共單體,若(且唯若)含氟共 ::不包含其他具有選自幾酸與保護酸基官能基之共單 =、貝】對於第—種共單體有限制。於此情況中,該含 氟共聚物僅僅具有兩種共單體(兩種所列舉之共單體,而 ^具有其他未列舉之共單體)。於此情況中,必須有足夠 耳能基度,其係選自羧酸與保護酸基,存在於該至少一 ㈣飽和化合物(意即第二種所列舉之共單體)中,以致由 含氟聚合體所組成之本發明光阻,可在影像複製曝光時 顯像如更詳細地於下文所解釋者。在使用僅僅具有兩 種共單體之含氟共聚物之此等具體實施例中,此兩種共 單體在共聚物中之莫耳百分比,個別對氟基單體(第一種 所列舉之單體)與第二種共單體,其範圍可從9〇%1〇%至 10%,90%。典型上,此兩種共單體莫耳百分比,個別對 氟基單體(第一種所列舉之單體)與第二種共單體,係從60 %,40%至40%,60%之範圍内。 對一些具體實施例而言,除了該兩種所列舉之共單體 (意即,(i)至少一種乙缔系不飽和化合物,含有至少一個 氟原子,以共價方式連接至乙婦系不飽和碳原子;與(H) 至少一種不飽和化合物,選自結構H-N之族群)之外,本 發明之含氟共聚物可包含任何整數而無限制之其他共單 體。代表性之其他共單體可包括但不限於丙烯酸、甲基 18 本紙張尺度適用中國國家標準(CNS) A4规格(210X 297公釐) B7 五、發明説明(15 ) 丙晞酸、丙烯酸第三_丁酯、甲基丙烯酸第三-丁酯、丙烯 酸第一-戊酯、甲基丙婦酸第三·戊酯、丙烯酸異丁酯、甲 基丙烯酸異丁酯、乙烯、醋酸乙烯酯、分解烏頭酸及乙 烯醇。在其中含氟共聚物具有兩種所列舉共單體,且包 含二種或更多種共單體之具體實施例中,第二種所列舉 之共單體(意即⑼至少一種不飽和化合物,選自結構h_n 之族群)之莫耳百分比,其範圍為約2〇莫耳%至約8〇莫耳 %,較佳範圍為約3〇莫耳%至約7〇莫耳 ⑽莫耳^㈣莫耳%,而又最佳係為⑽至約= 耳%。構成此共聚物之所有其他共單體之莫耳百分比之 總和,係表示餘額,在將其加入第二種所列舉共單體之 莫耳百分比時,合計為100%。除了第二種所列舉共單體 &lt;外,存在於共聚物中之所有其他共單體之莫耳百分比 之總和,廣義言之,係在約80莫耳%至約2〇莫耳%之範 圍内。所有其他共單體之莫耳百分比總和,較佳係在約 7〇莫耳%至約30莫耳%之範圍内。所有其他共單體之莫 耳百分比總和,更佳係在約6〇莫耳%至約3〇莫耳%之範 圍内’且又更佳m,所有其他共單體之莫耳百分比 總和,係在約50莫耳%至約30莫耳%之範圍内。當此本 氟聚合體為三聚物時,氟基單體(第一種所列舉之單@體)^十 其他共單體之適當比例,概括言之,其範圍可從5:=至 95 · 5。當此含氟共聚物以可顯像能力所必須之足量冬有 其他具有酸基團或經保護酸基官能基之共單體時,^官 能基可存在或不存在於第二種所列舉共單體中,而Ζ限 -19 591338 A7 B7 五、發明説明(16 ) 制。 本發明光阻組合物之一種特定含氟共聚物,其包含衍生 自共單體之重複單位,此共單體具有至少一個氟原子, 連接至乙烯系不飽和碳原子,該共聚物可藉自由基聚合 反應製成。聚合體可藉由熟諳此藝者已知之總體、溶 液、懸浮或乳化聚合技術,使用自由基引發劑,譬如偶 氮化合物或過氧化物製成。 本發明光阻組合物之一種特定含氟共聚物,其僅含有衍 生自所有環狀共單體之重複單位,且完全缺乏衍生自具 有一或多個氟原子而經連接至乙缔系不飽和碳原子之共 單體之重複單位,該共聚物亦可藉自由基聚合反應製 成,但另外,可藉其他聚合方法製成,包括乙烯基加成 聚合與開環複分解聚合反應(ROMP)。兩種後述聚合方法均 為熟諳此藝者所已知。使用鎳與鈀觸媒之乙烯基加成聚 合,係揭示於下列參考資料中:1) Okoroanyanwu U.; Shimokawa, T. ; Byers, J. D. ; Willson, C. G. J. Mol. Catal. A · Chemical 1998, 133, 93 ; 2) PCT WO 97/33198 (9/12/97)歸屬於 B.F. Goodrich ; 3) Reinmuth, A. ; Mathew, J. P. ; Melia, J.;Where A = H, (CH3) 3C, (〇 ^) 3Si. 'In the above-mentioned preferred embodiment, Qiaomaoren, T has at least one structure Η-Ν 的 ## is the second type of comonomer, if (and only if) fluorine-containing co- :: not included Other co-monomers selected from the group consisting of several acids and protected acid functional groups have restrictions on the first comonomer. In this case, the fluorinated copolymer has only two comonomers (two listed comonomers, and ^ has other unlisted comonomers). In this case, there must be a sufficient degree of ear energy, which is selected from the group consisting of carboxylic acids and protective acid groups, which are present in the at least one saturated compound (meaning the second listed comonomer), so that The photoresist of the present invention composed of a fluoropolymer can be developed during image copy exposure as explained in more detail below. In these specific examples using a fluorinated copolymer having only two comonomers, the mole percentages of the two comonomers in the copolymer are individually related to the fluoromonomer (the first listed Monomer) and the second co-monomer, which can range from 90% 10% to 10%, 90%. Typically, the percentage of these two comonomer moles, the individual parafluoro monomers (the first listed monomer) and the second comonomer, range from 60%, 40% to 40%, and 60%. Within range. For some specific embodiments, in addition to the two listed comonomers (that is, (i) at least one ethylenically unsaturated compound, containing at least one fluorine atom, covalently attached to the ethylenically unsaturated compound Saturated carbon atoms; and (H) at least one unsaturated compound selected from the group of structures HN), the fluorinated copolymer of the present invention may contain any integer without limitation other comonomers. Representative other comonomers may include, but are not limited to, acrylic acid and methyl 18. The paper size is applicable to Chinese National Standard (CNS) A4 specifications (210X 297 mm) B7 V. Description of the invention (15) Propionic acid, acrylic acid third _Butyl ester, tertiary butyl methacrylate, tertiary pentyl acrylate, tertiary pentyl methacrylate, isobutyl acrylate, isobutyl methacrylate, ethylene, vinyl acetate, decomposition Aconitic acid and vinyl alcohol. In a specific embodiment in which the fluorinated copolymer has two listed comonomers and includes two or more comonomers, the second listed comonomer (meaning ⑼ at least one unsaturated compound , Selected from the group h_n), which ranges from about 20 mole% to about 80 mole%, preferably from about 30 mole% to about 70 mole% ^ Mol%, and the best is ⑽ to about = ear%. The sum of the mole percentages of all other comonomers that make up this copolymer represents the balance, which adds up to 100% when added to the mole percentage of the second listed comonomer. The sum of the mole percentages of all other co-monomers present in the copolymer, except for the second listed comonomer &lt;, in a broad sense, is between about 80 mol% and about 20 mol%. Within range. The sum of the mole percentages of all other comonomers is preferably in the range of about 70 mole% to about 30 mole%. The sum of the mole percentages of all other comonomers is more preferably in the range of about 60 mole% to about 30 mole% 'and yet more preferably m. The sum of the mole percentages of all other comonomers is In the range of about 50 mole% to about 30 mole%. When this fluoropolymer is a terpolymer, the appropriate ratio of fluoro monomer (the first listed monomer @body) ^ ten other co-monomers, in short, can range from 5: = to 95 · 5. When this fluorinated copolymer has other comonomers having an acid group or a protected acid functional group in a sufficient amount necessary for imaging ability, the functional group may or may not be present in the second enumeration. Among the co-monomers, the limit is -19 591338 A7 B7 V. Description of the invention (16). A specific fluorinated copolymer of the photoresist composition of the present invention includes a repeating unit derived from a comonomer having at least one fluorine atom and connected to an ethylenically unsaturated carbon atom. The copolymer can be freely used. Made from radical polymerization. Polymers can be made by using bulk, solution, suspension, or emulsion polymerization techniques known to those skilled in the art, using free radical initiators such as azo compounds or peroxides. A specific fluorinated copolymer of the photoresist composition of the present invention, which contains only repeating units derived from all cyclic comonomers, and completely lacks unsaturated bonds derived from having one or more fluorine atoms connected to the ethylenic system. The repeating unit of comonomers of carbon atoms, the copolymer can also be made by free radical polymerization, but in addition, it can be made by other polymerization methods, including vinyl addition polymerization and ring opening metathesis polymerization (ROMP). Two polymerization methods described later are known to those skilled in the art. Vinyl addition polymerization using nickel and palladium catalysts is disclosed in the following references: 1) Okoroanyanwu U .; Shimokawa, T .; Byers, JD; Willson, CGJ Mol. Catal. A · Chemical 1998, 133, 93; 2) PCT WO 97/33198 (9/12/97) belongs to BF Goodrich; 3) Reinmuth, A .; Mathew, JP; Melia, J .;

Risse,W· Macromol. Rapid Commun. 1996, 17, 173 ;及 4) Breunig, S.; Risse,W. Makromol. Chem. 1992, 193, 2915 〇 開環複分解聚合反應 係揭示於前文所述參考資料1)與2)中,使用釕與銥觸媒; 以及在 5) Schwab,P. ; Grubbs, R. Η. ; Ziller, J. W. J. Am. Chem. Soc. 1996, 118, 100 :及 6) Schwab,P. ; France, Μ. B.; Ziller, J. W. ; Grubbs, R. H. Angew. Chem. Int. Ed. Engl. 1995, 34, 2039 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐)Risse, W. Macromol. Rapid Commun. 1996, 17, 173; and 4) Breunig, S .; Risse, W. Makromol. Chem. 1992, 193, 2915. The ring-opening metathesis polymerization reaction system is disclosed in the references mentioned above. 1) and 2), using ruthenium and iridium catalysts; and 5) Schwab, P .; Grubbs, R. Η .; Ziller, JWJ Am. Chem. Soc. 1996, 118, 100: and 6) Schwab, P.; France, Μ. B .; Ziller, JW; Grubbs, RH Angew. Chem. Int. Ed. Engl. 1995, 34, 2039 -20- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 x 297 mm)

裝 訂Binding

線 591338 A7 B7 五、發明説明(17 ) 中〇 本發明光阻組合物之一些含氟二聚物,其中二聚物含有 氟基單體(例如TFE)與環狀烯烴(例如正葙烯),其顯示係 為交替或約略交替之二聚物,其具有但不限於下文所示 之結構:Line 591338 A7 B7 5. In the description of the invention (17), some of the fluorine-containing dimers of the photoresist composition of the present invention, wherein the dimer contains a fluorine-based monomer (such as TFE) and a cyclic olefin (such as n-pinene) , Which is shown as an alternating or approximately alternating dimer, which has, but is not limited to, the structure shown below:

在此種情況中,本發明係包括此等交替或約略交替之共 聚物,但不以任何方式僅僅受限於交替共聚物結構。 此等聚合體係描述於2000年3月20日公告之W0 00/17712 中〇 聚合體(b)為含有經保護酸基之分枝狀聚合體,該聚合 體包含一或多個分枝鏈段,以化學方式沿著線性主鏈段 連接。此分枝狀聚合體可在至少一種乙烯系不飽和巨體 成份與至少一種乙烯系不飽和共單體之自由基加成聚合 期間形成。此乙烯系不飽和巨體成份具有數目平均分子 量(Mn)介於數百與40,000之間,且由聚合反應所形成之線 性主鏈段,具有數目平均分子量(Mn)介於約2,000與約 500,000之間。線性主鏈段對分枝鏈段之重量比,係在約 50/1至約1/10之範圍内,且較佳係在約80/20至約60/40之範 圍内。典型上,該巨體成份具有數目平均分子量(Mn)為 — 500至約40,000,且更典型上為約1,〇〇〇至約15,000。典型 上,此種乙烯系不飽和巨體成份,可具有數目平均分子 -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂In this case, the present invention includes such alternating or approximately alternating copolymers, but is not limited in any way to only alternating copolymer structures. These polymerization systems are described in WO 00/17712 published on March 20, 2000. The polymer (b) is a branched polymer containing a protected acid group, and the polymer contains one or more branched segments. , Chemically connected along the linear main chain. This branched polymer can be formed during radical addition polymerization of at least one ethylenically unsaturated macromonomer component and at least one ethylenically unsaturated comonomer. This ethylenically unsaturated macro component has a number average molecular weight (Mn) between hundreds and 40,000, and a linear main chain segment formed by a polymerization reaction, and has a number average molecular weight (Mn) between about 2,000 and about 500,000. between. The weight ratio of the linear main chain segment to the branch chain segment is in a range of about 50/1 to about 1/10, and preferably in a range of about 80/20 to about 60/40. Typically, the macromolecular component has a number average molecular weight (Mn) of from -500 to about 40,000, and more typically from about 1,000 to about 15,000. Typically, this type of ethylenically unsaturated macromolecular composition can have a number-average molecule -21-This paper size applies to China National Standard (CNS) A4 (210X 297 mm) binding

線 591338 A7 B7 五、發明説明(18 ) 量(Mn),相當於有約2至約500個單體單位,用以形成巨體 成份,且典型上在30與200個單體單位之間。 在一典型具體實施例中,分枝狀聚合體含有25%至100% 重量比之促相容基團,意即此等官能基之存在係為增加 與光酸發生劑之相容性,較佳為約50%至1〇〇%重量比,且 更佳為約75%至100%重量比。供離子性光酸發生劑用之適 當促相容基團,包括但不限於非親水性極性基團與親水 性極性基團。適當非親水性極性基圏包括但不限於氰基(_ CN)與硝基(·ν02 )。適當親水性極性基團包括但不限於質 子性基團,譬如羥基(ΟΗ)、胺基(ΝΗ2)、銨、醯胺基、醯 亞胺基、胺基甲酸酯、脲基或巯基;或幾酸(C〇2 Η)、磺 酸、亞磺酸、磷酸或其鹽。促相容基團較佳係存在於分 枝鏈段中。 典型上,經保護酸基(下文所述)在曝露於UV或其他光 化輻射,及接著曝光後烘烤(意即在去保護作用期間)之 後,會產生叛酸基。存在於本發明光敏性組合物中之分 枝狀聚合體,典型上係含有介於約3%至約40%重量比之 含有經保護酸基之單體單位,較佳係在約5%至約50%之 間,且更佳係在約5%至約20%之間。此種較佳分枝狀聚 合體之分枝鏈段,典型上含有所存在經保護酸基之35%至 100%之間。此種分枝狀聚合體,當完全未經保護時(所有 經保護酸基均被轉化成自由態酸基),具有酸價在約2〇與 約500之間,較佳係在約30與約330之間,且更佳係在約3〇 與約130之間,而同樣地,乙烯系不飽和巨體成份較佳係 -22- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 B7 五、發明説明(19 ) 具有酸價約20與約650之間,更佳係在約90與約300之間, 而大部份自由態酸基係在分枝鏈段中。 本發明此方面之各光敏性組合物,含有一種分枝狀聚合 體,亦稱為梳型聚合體,其含有經保護之酸基。此分枝 狀聚合體具有分枝鏈段,稱為聚合體臂,相對於線性主 鏈段,具有限之分子量及有限之重量比。在一較佳具體 實施例中,大部份經保護酸基係存在於分枝鏈段中。此 組合物亦含有一種成份,譬如光酸發生劑,其會使得組 合物對輻射能具有反應性,尤其是對於在電磁光譜之紫 外光區域中之輻射能,而最特別是在遠或極端紫外光區 域中。 在一特殊具體實施例中,此分枝狀聚合體係包含一或多 個分枝鏈段,以化學方式沿著線性主鏈段連接,其中分 枝狀聚合體具有數目平均分子量(Mn)約500至40,000。此分 枝狀聚合體含有至少0.5重量%之分枝鏈段。分枝鏈段亦 稱為聚合體臂,典型上係沿著線性主鏈段無規則地分 佈。”聚合體臂”或分枝鏈段係為至少兩種重複單體單位 之聚合體或寡聚物,其係藉由共價键連接至線性主鏈 段。此分枝鏈段或聚合體臂,可在巨體與共單體之加成 聚合製程期間摻入分枝狀聚合體中,作為巨體成份。對 本發明之目的而言,”巨體”係為分子量範圍從數百至約 40,000之聚合體、共聚物或寡聚物,含有末端乙缔系不飽 _ 和可聚合基團。此巨體較佳為以乙烯性基團封端之線性 聚合體或共聚物。典型上,此分枝狀聚合體為帶有一或 -23- 本紙張尺度逋用中國國家標準(CNS) A4規格(210 X 297公釐)Line 591338 A7 B7 V. Description of the invention (18) The quantity (Mn) is equivalent to about 2 to about 500 monomer units, which are used to form macro-compositions, and are typically between 30 and 200 monomer units. In a typical embodiment, the branched polymer contains 25% to 100% by weight of a compatibility-promoting group, which means that the existence of these functional groups is to increase the compatibility with the photoacid generator. It is preferably about 50% to 100% by weight, and more preferably about 75% to 100% by weight. Suitable miscibility groups for ionic photoacid generators include, but are not limited to, non-hydrophilic polar groups and hydrophilic polar groups. Suitable non-hydrophilic polar radicals include, but are not limited to, cyano (-CN) and nitro (· ν02). Suitable hydrophilic polar groups include, but are not limited to, protic groups such as hydroxy (0Η), amine (ΝΗ2), ammonium, amido, amidoimine, carbamate, urea or thiol groups; or Chinic acid (C02), sulfonic acid, sulfinic acid, phosphoric acid or a salt thereof. The compatibility-promoting group is preferably present in the branched segment. Typically, protected acid groups (described below) generate acid acid groups after exposure to UV or other actinic radiation and subsequent post-exposure baking (meaning during a deprotection period). The branched polymer present in the photosensitive composition of the present invention typically contains a monomer unit containing a protected acid group at a ratio of about 3% to about 40% by weight, preferably about 5% to about Between about 50%, and more preferably between about 5% and about 20%. The branching segments of such preferred branched polymers typically contain between 35% and 100% of the protected acid groups present. Such branched polymers, when completely unprotected (all protected acid groups are converted into free acid groups), have an acid value between about 20 and about 500, preferably between about 30 and Between about 330, and more preferably between about 30 and about 130, and similarly, the ethylenically unsaturated macromolecular composition is better -22- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 591338 A7 B7 V. Description of the invention (19) It has an acid value between about 20 and about 650, more preferably between about 90 and about 300, and most of the free acid groups are in the branches In the chain. Each photosensitive composition of this aspect of the present invention contains a branched polymer, also called a comb-type polymer, which contains a protected acid group. This branched polymer has branched segments, called polymer arms, with a limited molecular weight and a limited weight ratio relative to the linear main segment. In a preferred embodiment, most of the protected acid groups are present in the branched segments. This composition also contains an ingredient, such as a photoacid generator, which makes the composition reactive to radiant energy, especially for radiant energy in the ultraviolet region of the electromagnetic spectrum, and most particularly in far or extreme ultraviolet Light area. In a specific embodiment, the branched polymerization system includes one or more branched segments that are chemically connected along a linear main segment, wherein the branched polymers have a number average molecular weight (Mn) of about 500. To 40,000. This branched polymer contains at least 0.5% by weight of branched segments. Branching segments, also known as polymer arms, are typically randomly distributed along a linear main chain segment. A "polymer arm" or branched segment is a polymer or oligomer of at least two repeating monomer units, which is connected to the linear main segment by a covalent bond. This branched segment or polymer arm can be incorporated into the branched polymer during the addition polymerization process of the macromonomer and the comonomer as a macromer component. For the purposes of the present invention, a "macro" is a polymer, copolymer or oligomer having a molecular weight ranging from several hundred to about 40,000, containing terminal ethylenically unsaturated and polymerizable groups. This giant is preferably a linear polymer or copolymer terminated with an ethylenic group. Typically, this branched polymer comes with one or -23- Chinese paper standard (CNS) A4 size (210 X 297 mm)

裝 訂Binding

591338 A7 B7 五、發明説明(2〇 ) 多 個聚合體臂, 且 較佳為至少兩個 聚 合體 臂之共 聚物, 而 其特徵在於約 0.5 與約80重量%之丨 間 ,較佳為約5 與50重 量 %間之使用於 聚 合方法中之單體 成 份, 係為巨 體。典 型 上,伴隨著巨 體 使用於聚合方法 中 之共 單體成 份,同 樣 地含有單一乙 烯 性基團,其可與 乙 烯系 不飽和 巨體共 聚合。 此乙烯系不飽和1 乏體,及所形成之分枝狀聚合體 之分枝 鏈段及/或分枝狀 聚合體之主鏈, 可 於其 上已結 合一或 多 個經保護酸基 〇 對本發明之目的 而 言, ’’經保護酸基” 係 意謂一種官能 基 ,其當去除保護 時 ,會獲得自 由態酸 官 能基,其會加 強 巨體及/或其所 結 合之 分枝狀 聚合體 在 水溶液環境中 之 溶解度、溶脹性 或 分散 能力。 經保護 酸 基可摻入乙烯 系 不飽和巨體及所 形 成之 分枝狀 聚合體 之 分枝鏈段及/ 或 分枝狀聚合體之 主 鏈中 ’無論 是在其 形 成期間或之後 0 雖然使用巨體及 至 少一 種乙烯 系不飽 和 單體之加成聚 合 ,對於形成分枝狀 聚合 體,係 為較佳 的 ,但使用無論 是 加成或縮合反應 以 製備 分枝狀 聚合體 之 所有已知方法 均可使用於本發 明 中。 再者, 利用無 論 是預成形之主 鏈與分枝鏈段或當 場 聚合 之鏈段 ,亦可 應 用於本發明中 〇 連接至線性主鏈段之分枝鏈段,可衍生自 乙烯系 不飽和 巨 體,其係根據 美 國專利4,680,352與 美 國專 利 4,694,054 之一— 般說明製成。巨 體 係藉自由基聚合 方 法, 採用鈷 化合物 作 為催化鏈轉移 劑 ,且特別是姑⑻化合物 而製成 。鉛(II) -24- 裝 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐)591338 A7 B7 V. Description of the invention (20) A copolymer of a plurality of polymer arms, and preferably at least two polymer arms, which is characterized by being between about 0.5 and about 80% by weight, preferably about The monomer components used in the polymerization method between 5 and 50% by weight are giants. Typically, along with the comonomer component of the macromolecule used in the polymerization method, it also contains a single ethylenic group, which can be copolymerized with ethylenically unsaturated macromonomers. The ethylenically unsaturated 1 depleted body, and the branched segments and / or the main chain of the branched polymer formed, may have one or more protected acid groups bonded thereto. For the purposes of the present invention, a `` protected acid group '' means a functional group that, upon removal of the protection, will obtain a free acid functional group that will strengthen the macrosome and / or the branched form to which it is bound The solubility, swelling or dispersing ability of polymers in aqueous environments. Protected acid groups can be incorporated into the branched segments and / or branched polymers of the ethylenically unsaturated macrosomes and the branched polymers formed. In the main chain, whether it is during or after its formation. 0 Although the addition polymerization of a macro and at least one ethylenically unsaturated monomer is used, it is preferable to form a branched polymer, but the use of either All known methods for addition or condensation reactions to prepare branched polymers can be used in the present invention. Furthermore, the use of both pre-formed main chains and branched segments The on-site polymerization segment can also be applied in the present invention. The branch segment connected to the linear main segment can be derived from an ethylene-based unsaturated giant, which is based on one of US Patent 4,680,352 and US Patent 4,694,054-generally The description is made. The giant system is made by free radical polymerization method, using cobalt compound as the catalytic chain transfer agent, and especially the auspicious compound. Lead (II) -24- The dimensions of this paper are applicable to Chinese National Standard (CNS) A4 Specifications (210 x 297 mm)

Jingling

線 591338 A7 B7 五、發明説明(21 化合物可為五氰基鈷(II)化合物,或以下化合物之姑⑼螯 合物,毗亞胺基羥基亞胺基化合物、二羥基亞胺基化合 物、二氮二羥基亞胺基二烷基癸二烯、二氮二羥基亞胺 基-二烷基Η—垸二烯、四氮四烷基環十四烷四烯、四氮 四烷基環十二烷四烯、雙(二氟氧硼基)二苯基乙二醛月亏 基、雙(二氟氧硼基)二甲基乙二醛Μ基、Ν,Ν’-雙(亞柳基)乙 二胺、二烷基二氮-二氧二烷基十二碳二烯或二烷基二氮 二氧基二烷基-十三碳二烯。低分子量甲基丙婦酸酯巨 體,亦可以五氰基鈷(II)催化鏈轉移劑製成,如在美國專 利4,722,984中所揭示者。 使用此途徑之說明性巨體,係為具有丙烯酸酯或其他乙 烯基單體之甲基丙烯酸酯聚合體,其中聚合體或共聚物 具有末端乙烯性基團與親水性官能基。用於製備巨體之 較佳單體成份,包括:甲基丙烯酸第三-丁酯(tBMA)、丙 烯酸第三-丁酯(tBA)、甲基丙烯酸甲酯(MMA);甲基丙烯酸 乙酯(EMA);甲基丙烯酸丁酯(BMA);甲基丙烯酸2-乙基己 酯;丙烯酸甲酯(MA);丙烯酸乙酯(EA);丙烯酸丁酯(BA); 丙烯酸2-乙基己酯;甲基丙烯酸2-羥乙酯(HEMA);丙烯酸 2-羥乙酯(HEA);甲基丙烯酸(MA);丙烯酸(AA);丙烯酸與 甲基丙烯酸之酯類,其中酯基含有1至18個碳原子;丙缔 酸與甲基丙烯酸之腈類與醯胺類(例如丙烯腈);甲基丙烯 酸與丙烯酸之縮水甘油酯;分解烏頭酸(IA)及分解烏頭酸 — 酐(ITA)、半酯及醯亞胺;順丁烯二酸及順丁烯二酸酐、 半酯及醯亞胺;甲基丙烯酸胺基乙酯;甲基丙烯酸第三- -25- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)Line 591338 A7 B7 V. Description of the invention (21 The compound may be a pentacyanocobalt (II) compound, or a chelate compound of the following compounds, a iminohydroxyimino compound, a dihydroxyimino compound, two Azadihydroxyimidodialkyldecadiene, diazadihydroxyimido-dialkylfluorene-fluorenediene, tetraazatetracyclocyclotetradecane tetraene, tetraazatetracyclocyclododecane Alkyl tetraene, bis (difluoroboryl) diphenylglyoxal, bis (difluoroboryl) dimethylglyoxal M group, Ν, Ν'-bis (sialylene) Ethylenediamine, dialkyldiaza-dioxodialkyldodecadiene or dialkyldiazodioxydialkyl-tridecadiene. Low molecular weight methylpropionate It can also be made from a pentacyano cobalt (II) catalyzed chain transfer agent, as disclosed in U.S. Patent No. 4,722,984. An illustrative giant using this approach is methacrylic acid with an acrylate or other vinyl monomer Ester polymer, in which the polymer or copolymer has a terminal ethylenic group and a hydrophilic functional group. The preferred monomer component for preparing macromers, including : Third-butyl methacrylate (tBMA), third-butyl acrylate (tBA), methyl methacrylate (MMA); ethyl methacrylate (EMA); butyl methacrylate (BMA); 2-ethylhexyl methacrylate; methyl acrylate (MA); ethyl acrylate (EA); butyl acrylate (BA); 2-ethylhexyl acrylate; 2-hydroxyethyl methacrylate (HEMA) ; 2-hydroxyethyl acrylate (HEA); methacrylic acid (MA); acrylic acid (AA); esters of acrylic acid and methacrylic acid, in which the ester group contains 1 to 18 carbon atoms; acrylic acid and methacrylic acid Nitriles and amidines (such as acrylonitrile); glycidyl esters of methacrylic acid and acrylic acid; decomposition of aconitic acid (IA) and decomposition of aconitic acid-anhydride (ITA), half esters, and iminoimides; maleic acid Acid and maleic anhydride, half-esters and fluorene imines; aminoethyl methacrylate; third methacrylic acid-25- This paper size applies to China National Standard (CNS) A4 (210X297 mm)

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線 591338 A7 B7Line 591338 A7 B7

五、發明説明(22 ) 丁基胺基乙酯;甲基丙烯酸二甲胺基乙酯;甲基丙烯酸 一乙胺基乙酯;丙缔酸胺基乙酯;丙婦酸二甲胺基乙 酯;丙烯酸二乙胺基乙酯;丙烯醯胺;乂第三-辛基丙烯 醯胺;乙烯基甲基醚;苯乙烯(STY) ; α ·甲基苯乙烯 (AMS);醋酸乙烯酯;氯乙烯等。 分解烏頭酸酐(ΙΤΑ,2-亞甲基琥珀奸,CAS編號=217〇-〇3-8) 為供使用於分枝狀聚合體之特別有利共單體,因其具有 兩種活性官能基,呈酐形式,在開環作用時,其變成三 種,而知一酸。乙婦系不飽和部份基團為第一種官能 基,其係提供此共單體被併入共聚物中之能力,例如藉 自由基聚合反應。酐部份基團為第二種官能基,其能夠 與多種其他官能基反應,而得共價結合之產物。奸部份 基團可與其反應之官能基實例,為在醇中之經基,以形 成酯鏈結。在ITA之酐部份基團與羥基反應時,係形成酯 鏈結,及自由態羧酸部份基團,其係為第三種官能基。 此羧酸官能基可用於對本發明光阻賦予水溶液加工性 能。若使用具有羥基之PAG,則如一些實例中所示,其可 經由此類型之酯鏈結(或其他共價鏈結,譬如醯胺等),以 共價鍵方式使PAG (或其他光活性成份)連接(繫留)至包含 ITA共單體或其類似物之分枝狀聚合體。 此分枝狀聚合體可藉任何習用加成聚合方法製成。此分 枝狀聚合體或梳型聚合體,可製自一或多種可相容之乙 烯系不飽和巨體成份與一或多種可相容之習用乙=^不 飽和共單體成份。較佳可加成聚合之乙烯系不飽和共單V. Description of the invention (22) Butylaminoethyl; dimethylaminoethyl methacrylate; monoethylaminoethyl methacrylate; ethylaminoethyl acrylate; dimethylaminoethyl valerate Esters; diethylaminoethyl acrylate; acrylamide; ammonium tertiary-octylacrylamide; vinyl methyl ether; styrene (STY); α-methylstyrene (AMS); vinyl acetate; Vinyl chloride, etc. Decomposition aconitic anhydride (ΙΤΑ, 2-methylene succinic acid, CAS number = 217〇-〇3-8) is a particularly advantageous comonomer for branched polymers, because it has two reactive functional groups, In the form of anhydride, it becomes three kinds when ring-opening. The ethylenically unsaturated group is the first functional group, which provides the ability of this comonomer to be incorporated into the copolymer, such as by free radical polymerization. The anhydride moiety is a second functional group that can react with a variety of other functional groups to obtain a covalently bonded product. An example of a functional group with which a molybdenum group can react is a radical in an alcohol to form an ester chain. When the anhydride group of ITA reacts with a hydroxyl group, it forms an ester chain, and the free-state carboxylic acid group is a third functional group. This carboxylic acid functional group can be used to impart aqueous solution processing properties to the photoresist of the present invention. If a PAG with a hydroxyl group is used, as shown in some examples, it can be covalently bonded to the PAG (or other photoactive species) via an ester link (or other covalent link such as amidine, etc.) of this type. Ingredients) are linked (tethered) to branched polymers containing ITA co-monomers or their analogs. This branched polymer can be made by any conventional addition polymerization method. This branched polymer or comb-type polymer can be made from one or more compatible ethylenically unsaturated macromonomer components and one or more compatible conventional ethylenically unsaturated comonomer components. Addition-polymerizable ethylenically unsaturated co-monomers

k 訂k order

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591338 A7 B7 五、發明説明(23 ) 體成份係為丙晞酸酯、甲基丙烯酸酯及苯乙缔性物質, 以及其混合物。適當可加成聚合之乙烯系不飽和共單體 成份,包括:甲基丙烯酸第三-丁酯(tBMA)、丙烯酸第三· 丁醋(tBA)、甲基丙烯酸甲酯(MMA);甲基丙烯酸乙醋 (EMA);甲基丙烯酸丁酯(BMA);甲基丙烯酸2-乙基己酯; 丙烯酸甲酯(MA);丙烯酸乙酯(EA);丙烯酸丁酯(BA);丙烯 酸2-乙基己酯;甲基丙烯酸2-羥乙酯(HEMA);丙缔酸2- #至 乙酯(HEA);甲基丙烯酸(MAA);丙烯酸(AA);丙烯腈(AN); 甲基丙烯腈(MAN);分解烏頭酸(ΙΑ),及分解烏頭酸奸 (ΙΤΑ)、半酯及醯亞胺;順丁烯二酸,及順丁烯二酸奸、 半酯及醯亞胺;甲基丙烯酸胺基乙酯;甲基丙烯酸第三. 丁基胺基乙酯;甲基丙烯酸二甲胺基乙酯;甲基丙缔酸 二乙胺基乙酯;丙烯酸胺基乙酯;丙烯酸二甲胺基乙 酯;丙缔酸二乙胺基乙酯;丙烯醯胺;Ν-第三-辛基丙缔 醯胺;乙烯基甲基醚類;苯乙烯(S) ; α•甲基苯乙缔;醋 酸乙烯酯;氯乙晞等。大部份可共聚合單體必須是丙烯 酸醋或苯乙烯性物質或此等單體與丙烯酸酯及其他乙烯 基單體之共聚物。 本發明分枝狀聚合體之各組成線性主鏈段及/或分枝鏈 段,可含有多種官能基。”官能基&quot;係被認為是能夠藉由 直接h鍵或藉由連結基團,而連接至主鏈段或分枝鏈段 (任何部份基團。可被主鏈段或分枝鏈段帶有之官能基— 之說明例,係為-COOR24 ; _〇R24 ; ·5{124 ,其中R24可為 氫’具有1至12個碳原子之烷基;3-12個碳原子之環烷 -27- 591338591338 A7 B7 V. Description of the invention (23) The body composition is propionate, methacrylate, phenylethylene, and mixtures thereof. Appropriate addition-polymerizable ethylenically unsaturated comonomer components, including: tertiary butyl methacrylate (tBMA), tertiary butyl acrylate (tBA), methyl methacrylate (MMA); methyl Ethyl Acrylate (EMA); Butyl Methacrylate (BMA); 2-ethylhexyl Methacrylate; Methyl Acrylate (MA); Ethyl Acrylate (EA); Butyl Acrylate (BA); Ethylhexyl Ester; 2-Hydroxyethyl Methacrylate (HEMA); 2- # to Ethyl Acrylate (HEA); Methacrylic Acid (MAA); Acrylic Acid (AA); Acrylonitrile (AN); Methyl Ester Acrylonitrile (MAN); Decomposing aconitic acid (ΙΑ), and decomposing aconitic acid (ΙΑΑ), half esters, and fluorimides; maleic acid, and maleic acid, halides, and imines; Aminoethyl methacrylate; third methacrylic acid; butylaminoethyl methacrylate; dimethylaminoethyl methacrylate; diethylaminoethyl methacrylate; aminoethyl acrylate; acrylic acid Dimethylaminoethyl; Diethylaminoethyl Acrylate; Acrylamide; N-Third-octylpropylamine; Vinyl methyl ethers; Styrene (S); α • methyl Phenyl Ethylene Esters; Most copolymerizable monomers must be acrylic or styrenic or copolymers of these monomers with acrylates and other vinyl monomers. Each component of the branched polymer of the present invention has a linear main chain segment and / or a branched chain segment, and may contain various functional groups. "Functional group" is considered to be able to be connected to the main segment or branch segment (any part of the group by a direct h bond or by a linking group. It can be the main segment or the branch segment An illustrative example of the functional group — is -COOR24; _〇R24; · 5 {124, where R24 can be a hydrogen 'alkyl group having 1 to 12 carbon atoms; a cycloalkane having 3 to 12 carbon atoms -27- 591338

基;具有6至14個碳原子之芳基、烷芳基或芳烷基;含有 3至12個碳原子,且另外含有至少一個s、〇、N或p原子 之雜環族基團;或-OR27,其中R27可為M2個碳原子之烷 基,具有6至14個碳原子之芳基、烷芳基或芳垸基;_ CN ; -NR25R26,或 —c—nr25r26 其中R2)與R26可為氫,具有i至12個碳原子之烷基;具有 3-12個碳原子之環烷基;6至14個碳原子之芳基、烷芳 基、芳烷基;-CH2 OR2 8,其中r2 8為氫,j至12個碳原子之 燒基;或3-12個碳原子之環燒基,具有6至14個碳原子之 芳基、烷芳基、芳烷基,或反^與反^可一起形成具有3至 12個碳原子,且含有至少一個s、N、〇或p之雜環; .Γ · —g=cr30r31 其中R2 9、Rj 〇及R31可為氫,1至12個碳原子之燒基,或3· 12個碳原子之環垸基;6至14個碳原子之芳基、垸芳基、 芳烷基,或-COOR24,或當R29、R3〇及/或R31 一起採用 時,可形成環狀基團;-SC^H ;胺基甲酸酯基;異氰酸醋 或經阻斷之異氰酸酯基;脲基;環氧乙烷基;氮丙淀 基;S昆二疊氮化物基;偶氮基;疊氮化物基;重氮基; 乙醯基乙醯氧基;-SiR32R33R34,其中R32、R33&amp;R34可為 具有M2個碳原子之烷基,或3-12個碳原子之環烷基,或. -28- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 ______B7 五、發明説明(25 ) OR ,其中R3 5為1-12個碳原子之烷基,或3-12個碳原子之 環烷基;6至14個碳原子之芳基、烷芳基或芳烷基;或_ 〇S〇3R36、_〇P〇2R36、-p〇2R36、_pr36r37r38、_〇p〇r36、· SRWRW 或-N+R36R37R38基團(其中 r36、r37 及 r38可為氫, 1至12個碳原子之烷基,或弘12個碳原子之環烷基;6至14 個碳原子之芳基、烷芳基或芳烷基;或任何前述之鹽或 錯鹽。較佳官能基為_C00N、-〇H、-Nh2、醯胺基、乙烯 基、胺基甲酸酯基、異氰酸酯基、經阻斷之異氰酸酯 基,或其組合。官能基可位於分枝狀聚合體上之任何位 置。但是’有時需要選擇會對分枝狀聚合體之線性主鏈 段賦予整體聚合體特徵之共單體,及除了親水性以外, 會對分枝鏈段賦予物理與化學官能性之巨體,譬如溶解 度、反應性等。 在本發明之某些較佳具體實施例中,分枝狀聚合體含有 可與光酸發生劑相容之官能基,該官能基係分佈在分枝 狀聚合體中,以致使25至100%之官能基係存在於含有大 部份經保護酸基之分枝狀聚合體之鏈段中。此等官能基 疋令人滿意的,因為光酸發生劑與具有大部份經保護酸 基之分枝狀聚合體分段具有加強之相容性,會造成較高 光速度及可能之較高解析度,及/或光阻之其他期望性 質,該光阻包含具有此等官能基以促進相容性之分枝狀 聚合體。對於離子性PAG,譬如三芳基锍鹽,會促進相容 性之官能基,係包括但不限於極性非親水性基團(例如硝 基或氰基)與極性親水性基團(例如經基、竣基)。對於非 -29- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338An aryl, alkaryl or aralkyl group having 6 to 14 carbon atoms; a heterocyclic group containing 3 to 12 carbon atoms and additionally containing at least one s, 0, N or p atom; or -OR27, where R27 can be an alkyl group of M2 carbon atoms, an aryl, alkaryl or arylfluorenyl group having 6 to 14 carbon atoms; CN; -NR25R26, or -c-nr25r26 where R2) and R26 May be hydrogen, alkyl having i to 12 carbon atoms; cycloalkyl having 3 to 12 carbon atoms; aryl, alkaryl, aralkyl having 6 to 14 carbon atoms; -CH2 OR2 8, Wherein r2 8 is hydrogen, an alkyl group of j to 12 carbon atoms; or a ring alkyl group of 3 to 12 carbon atoms, an aryl group, alkylaryl group, aralkyl group, or transalkyl group having 6 to 14 carbon atoms. And trans ^ can form a heterocyclic ring having 3 to 12 carbon atoms and containing at least one s, N, 0 or p; .Γ · —g = cr30r31 where R2 9, Rj 0 and R31 can be hydrogen, 1 to An alkyl group of 12 carbon atoms, or a cyclofluorenyl group of 3.12 carbon atoms; an aryl group, an arylene group, an aralkyl group of 6 to 14 carbon atoms, or -COOR24, or when R29, R3〇, and / When used together with R31, it can form a cyclic group; -SC ^ H; Urethane group; Isocyanate or blocked isocyanate group; Urea group; Ethylene oxide group; Azido group; Squindiazide group; Azo group; Azide -Diazo; ethenylacetoxy; -SiR32R33R34, where R32, R33 &amp; R34 may be an alkyl group having M2 carbon atoms, or a cycloalkyl group having 3-12 carbon atoms, or. -28 -This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 591338 A7 ______B7 5. Description of the invention (25) OR, where R3 5 is an alkyl group of 1-12 carbon atoms, or 3-12 Cycloalkyl of 6 carbon atoms; aryl, alkaryl or aralkyl of 6 to 14 carbon atoms; or r36, · SRWRW or -N + R36R37R38 group (where r36, r37 and r38 can be hydrogen, an alkyl group of 1 to 12 carbon atoms, or a cycloalkyl group of 12 carbon atoms; 6 to 14 carbon atoms Aryl, alkaryl or aralkyl; or any of the foregoing salts or complex salts. Preferred functional groups are -C00N, -0H, -Nh2, amido, vinyl, urethane, isocyanate Blocked isocyanide An ester group, or a combination thereof. The functional group may be located anywhere on the branched polymer. However, 'sometimes it is necessary to select a comonomer that gives the overall polymer characteristics to the linear main segment of the branched polymer, and In addition to hydrophilicity, macros that impart physical and chemical functionalities to branched segments, such as solubility and reactivity. In certain preferred embodiments of the present invention, the branched polymer contains a functional group compatible with the photoacid generator, and the functional group is distributed in the branched polymer such that 25 to 100% The functional group is present in the segment of the branched polymer containing most of the protected acid groups. These functional groups are satisfactory because photoacid generators have enhanced compatibility with branched polymer segments with most protected acid groups, resulting in higher light speeds and possible higher resolution Degrees, and / or other desirable properties of photoresists, which include branched polymers having such functional groups to promote compatibility. For ionic PAGs, such as triarylsulfonium salts, functional groups that promote compatibility include, but are not limited to, polar non-hydrophilic groups (such as nitro or cyano) and polar hydrophilic groups (such as Junji). For non--29- this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 591338

離子性PAG,譬如下文結構m,用以賦予相容性之較佳官 能基’係、比上文列示之極性基團具較低極性。對後述情 況而言’適當官能基係包括但不限於會對非離子性圓賦 予頗為類似化學與物理性質之基團。以下述作為兩種特 殊實例,芳族與全氟烷基官能基係有效促進分枝狀聚合 體與非離子性PAG (譬如下文所予之結構ίΗ)之相容性。 在一些較佳具體實施例中,分枝狀聚合體為丙烯酸/甲 基丙烯酸/苯乙烯性共聚物,其為至少6〇重量%丙烯酸 酉旨’並具有至少60%甲基丙烯·酸g旨重複單位,存在於無論 是第一個位置或第二個位置上,第一個位置為鏈段之一 (意即分枝鏈段或線性主鏈段),第二個位置為與第一個位 置不同之鏈段,其中至少60%丙烯酸酯重複單位係存在於 第二個位置上。 在一些具體實施例中,分枝狀聚合體為含氟接枝共聚 物,其包含衍生自至少一種乙婦系不飽和化合物之重複 單位,該化合物含有至少一個氟原子,以共價方式連接 至乙締系不飽和碳原子。帶有至少一個氟原子之重複單 位,可無論是在線性聚合體主鏈段中,或在分枝聚合體 鏈段中;其較佳係在線性聚合體主鏈段中。適用於本發 明含氟接枝共聚物之代表性乙烯系不飽和化合物,包括 但不限於四氟乙烯、氯三氟乙婦、六氟丙烯、三氟乙 晞、二氟亞乙烯、氟乙烯及RfOCF=CF2,其中Rf為1至約10 — 個碳原子之飽和全氟烷基。本發明之含氟共聚物可包含 任何整數之其他含氟共單體,其包括但不限於前文所列 -30- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 591338 A7 B7 五、發明説明(27 示者。較佳共單體為四氟乙缔、氣三氟乙烯、六氟丙 烯、三氟乙烯及Rf0CF=CF2,其中心為丄至約ι〇個碳原子之 飽和全氟烷基。更佳共單體為四氟乙烯、氯三氟乙烯、 六氟丙烯及Rf〇CF=CF2,其中〜為丨至約10個碳原子之飽和 全氟烷基。最佳共單體為四氟乙烯與氯三氟乙烯。 在一些較佳具體實施例中,含氟接枝共聚物係進一步包 含衍生自至少一種不飽和化合物之重複單位,選自包括 上文聚合體(a)所示之結構。 在本發明之一項具體實施例中,pAG係以共價键方式連 接(意即繫留)至含氟接枝共聚物,而得光阻。 在一些較佳具體實施例中,分枝狀聚合體為含氟共聚 物’其包含衍生自至少一種乙缔系不飽和化合物之重複 單位,該化合物含有氟基醇官能基,具有以下結構:Ionic PAGs, such as the structure m below, are preferred functional groups for imparting compatibility and are of a lower polarity than the polar groups listed above. In the latter case, the &apos; appropriate functional group includes, but is not limited to, groups which impart fairly similar chemical and physical properties to non-ionic circles. Taking the following as two specific examples, aromatic and perfluoroalkyl functional groups are effective to promote the compatibility of branched polymers with non-ionic PAGs (such as the structure shown below). In some preferred embodiments, the branched polymer is an acrylic acid / methacrylic acid / styrenic copolymer, which is at least 60% by weight acrylic acid, and has at least 60% methacrylic acid. A repeating unit exists in either the first position or the second position. The first position is one of the segments (meaning a branch segment or a linear main segment), and the second position is the same as the first position. Segments with different positions where at least 60% of the acrylate repeat units are present at the second position. In some embodiments, the branched polymer is a fluorine-containing graft copolymer that includes repeating units derived from at least one ethylenically unsaturated compound, the compound containing at least one fluorine atom, covalently linked to Ethylene is an unsaturated carbon atom. The repeating unit having at least one fluorine atom may be either in the main segment of the linear polymer or in the branched polymer segment; it is preferably in the main segment of the linear polymer. Representative ethylene-based unsaturated compounds suitable for the fluorine-containing graft copolymers of the present invention include, but are not limited to, tetrafluoroethylene, chlorotrifluoroethane, hexafluoropropylene, trifluoroacetamidine, difluoroethylene, vinyl fluoride, and RfOCF = CF2, where Rf is a saturated perfluoroalkyl group of 1 to about 10-carbon atoms. The fluorinated copolymer of the present invention may contain any integer other fluorinated co-monomers, including but not limited to those listed above. -30- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) 591338 A7 B7 V. Description of the invention (shown in 27. Preferred comonomers are tetrafluoroethylene, trifluoroethylene, hexafluoropropylene, trifluoroethylene, and Rf0CF = CF2, with the center of 丄 to about ι0 carbon atoms. Saturated perfluoroalkyl. More preferred comonomers are tetrafluoroethylene, chlorotrifluoroethylene, hexafluoropropylene, and RfCF = CF2, where ~ is a saturated perfluoroalkyl group of about 10 to about 10 carbon atoms. Best The comonomers are tetrafluoroethylene and chlorotrifluoroethylene. In some preferred embodiments, the fluorine-containing graft copolymer further comprises repeating units derived from at least one unsaturated compound, selected from the group consisting of the above polymers ( The structure shown in a). In a specific embodiment of the present invention, pAG is connected to the fluorine-containing graft copolymer in a covalent bond manner (that is, is retained), and photoresist is obtained. In some preferred embodiments, In embodiments, the branched polymer is a fluorinated copolymer, which includes One kind of unsaturated associative acetate repeating units of compounds, the fluoro compound-containing alcohol functional group, having the structure:

-C(Rf)(Rf,)〇H 其中心與1^,為1至約10個碳原子之相同或不同氟烷基,或 一起採用為(CF2 )n,其中η為2至1〇。 根據本發明之一種特定含氟分枝狀共聚物,其包含衍生 自至少一種含有氟基醇官能基之乙烯系不飽和化合物之 重複單位’該共聚物可具有氟烷基存在,作為氟基醇官 也基之一部份。此等氟烷基係被稱為心與,,其可為部份 氟化烷基或完全氟化烷基(意即全氟烷基)。廣義言之,Rf 與Rf,為1至約ίο個碳原子之相同或不同氟烷基,或一起採 用為(CF2)n,其中n為2至10(在此最後句子中,”一起採用 •’術語係表示心與Rf,不為個別、不連續之氟化烷基,而是 -31 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)-C (Rf) (Rf,) OH with the same or different fluoroalkyl group having 1 to about 10 carbon atoms at the center, or taken together as (CF2) n, where η is 2 to 10. A specific fluorine-containing branched copolymer according to the present invention, which comprises repeating units derived from at least one ethylenically unsaturated compound containing a fluoroalcohol functional group. The copolymer may have a fluoroalkyl group as a fluoroalcohol A part of Guan Yeji. These fluoroalkyl systems are referred to as amines, and they can be partially fluorinated alkyls or fully fluorinated alkyls (meaning perfluoroalkyls). Broadly speaking, Rf and Rf are the same or different fluoroalkyl groups of 1 to about ί carbon atoms, or are used together as (CF2) n, where n is 2 to 10 (in this last sentence, "used together • 'The term refers to heart and Rf. It is not an individual, discontinuous fluorinated alkyl group, but -31-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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線 591338Line 591338

起形成環結構,譬如在下文5-員環情況中所示者:To form a ring structure, as shown in the following 5-member ring case:

根據本發月Rf與Rf·可為部份氟化燒基,而無限制,惟必 須有足夠氟化度存在,以對氟基醇官能基之羥基(·〇Η)賦 予酸度’以致使羥基質子係實質上在鹼性媒質中被移 除’譬如在氫氧化鈉水溶液或氫氧化四烷基銨水溶液 中。在根據本發明之較佳情況中,係有足夠氟取代存在 於氟基醇Τ能基之氟化烷基中,以致此羥基具有pKa值如 下· 5 &lt; pKa &lt;11。Rf與Rf,較佳係獨立為1至5個碳原子之全 氟烷基,且Rf與Rf,最佳係均為三氟甲基(CF3)。根據本發 明之各含氟共聚物,在157奈米之波長下,較佳係具有吸 收係數低於4.0微米-1,於此波長下較佳係低於3 5微米· 1,且更佳係於此波長下低於3 〇微米-i。 包含氟基醇官能基之本發明氟化聚合體、光阻及方法, 可具有以下結構:According to this issue, Rf and Rf · can be partially fluorinated groups without limitation, but there must be sufficient degree of fluorination to impart acidity to the hydroxyl group (· 〇Η) of the fluoroalcohol functional group, so that the hydroxyl group The proton system is substantially removed in an alkaline medium, such as in an aqueous solution of sodium hydroxide or an aqueous solution of tetraalkylammonium hydroxide. In the preferred case according to the present invention, there is sufficient fluorine substitution in the fluorinated alkyl group of the fluoroalcohol T-energy group, so that the hydroxyl group has a pKa value of 5 &lt; pKa &lt; 11. Rf and Rf are preferably perfluoroalkyl groups having 1 to 5 carbon atoms independently, and Rf and Rf are most preferably trifluoromethyl (CF3). Each fluorinated copolymer according to the present invention preferably has an absorption coefficient of less than 4.0 microns-1 at a wavelength of 157 nm, and preferably less than 35 microns · 1 at this wavelength, and more preferably It is below 30 μm-i at this wavelength. The fluorinated polymer, photoresist and method of the present invention containing a fluoroalcohol functional group may have the following structure:

-ZCH2C(Rf)(Rf,)〇H 其中Rf與Rf·為1至約10個碳原子之相同或不同氟烷基,或 一起採用為(CF2)n,其中n為2至1〇; z係選自包括氧、 硯、氮、磷,其他VA族元素及其他v!A族元素。所謂,,其 他VA族元素,,與”其他族元素”術語,應明瞭此等術語一 於此處係指在週期表此等族群之一中之任何其他元素 其不為此等基團中所列舉之元素(意即氧、硫、氮、磷)。 -32- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 591338 A7 B7 五、發明説明(29 氧為較佳Z基團。 含有氟基醇官能基且在本發明範圍内之代表性共單體之 一些說明性但非限制性實例,係於下文提出:-ZCH2C (Rf) (Rf,) 〇H where Rf and Rf · are the same or different fluoroalkyl groups of 1 to about 10 carbon atoms, or used together as (CF2) n, where n is 2 to 10; z It is selected from the group consisting of oxygen, osmium, nitrogen, phosphorus, other VA group elements, and other v! A group elements. So-called, other VA group elements, and the terms of "other group elements", should be clear that these terms-as used herein, refer to any other element in one of these groups of the periodic table that is not in this group Listed elements (meaning oxygen, sulfur, nitrogen, phosphorus). -32- This paper size is in accordance with Chinese National Standard (CNS) A4 (21 × 297 mm) 591338 A7 B7 V. Description of the invention (29 oxygen is the preferred Z group. It contains a fluoroalcohol functional group and is in the present invention Some illustrative but non-limiting examples of representative comonomers within the scope are set out below:

j^J-CH2C(CF3)2〇H |j^J-CH2〇CH2C(CF3)2〇Hj ^ J-CH2C (CF3) 2〇Hj ^ J-CH2〇CH2C (CF3) 2〇H

CH2=CHOCH2CH2〇CH2C(CF3)2OH · ch2=cho(ch2)4och2c(cf3)2oh 正如熟諳聚合體技藝者所習知,乙烯系不飽和化合物係 進行自由基聚合反應,而得具有衍生自乙烯系不飽和化 合物之重複單位之聚合體。明確言之,具有以下結構之 乙諦系不飽和化合物:CH2 = CHOCH2CH2〇CH2C (CF3) 2OH · ch2 = cho (ch2) 4och2c (cf3) 2oh As is well known to those skilled in the art of polymer polymerization, ethylenically unsaturated compounds undergo radical polymerization to obtain derivatives derived from Polymers of repeating units of unsaturated compounds. Specifically, the acetamidine unsaturated compound having the following structure:

QQ

係為上文關於共聚物(al)所描述者。 具有至少一個氟醇基⑷之氟聚合體,係選自包括: (cl) 一種含氟聚合體,其包含衍生自至少一種乙烯系不 一 飽和化合物之重複單位,該化合物含有氟基醇官能基, 具有以下結構: -33- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 591338 發明説明It is as described above with respect to the copolymer (al). A fluoropolymer having at least one fluoroalcohol group is selected from the group consisting of: (cl) a fluoropolymer containing repeating units derived from at least one ethylenically unsaturated compound, the compound containing a fluoroalcohol functional group , Has the following structure: -33- This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) 591338 Description of the invention

-C(Rf)(Rf,)〇H 其中Rf與Rf,均如上述; (c2) —種含氟共聚物,其包含衍生自至少一種乙烯系不 飽和化合物之重複單位,其特徵在於至少一種乙烯系不 飽和化合物係為環狀或多環狀,至少一種乙缔系不飽和 化合物含有至少一個氟原子,以共價方式連接至乙烯系 不飽和碳原子,及至少一種乙烯系不飽和化合物包含氟 基醇官能基,具有以下結構··-C (Rf) (Rf,) 〇H wherein Rf and Rf are as described above; (c2) a fluorinated copolymer comprising repeating units derived from at least one ethylenically unsaturated compound, characterized by at least one Ethylene unsaturated compounds are cyclic or polycyclic, at least one ethylenically unsaturated compound contains at least one fluorine atom, is covalently connected to an ethylenically unsaturated carbon atom, and at least one ethylenically unsaturated compound contains The fluoroalcohol functional group has the following structure ...

-C(Rf)(Rf,)〇H 其中Rf與Rf,均如上述; (c3) —種含氟共聚物,其包含: (0衍生自至少一種乙烯系不飽和化合物之重複單 位’該化合物含有至少三個氟原子,以共價方式 連接至兩個乙烯系不飽和碳原子;與 (ii)衍生自乙烯系不飽和化合物之重複單位,其包含 氟基醇官能基,具有以下結構:-C (Rf) (Rf,) 〇H wherein Rf and Rf are as described above; (c3) a fluorinated copolymer comprising: (0 repeating units derived from at least one ethylenically unsaturated compound 'the compound Contains at least three fluorine atoms, covalently connected to two ethylenically unsaturated carbon atoms; and (ii) a repeating unit derived from an ethylenically unsaturated compound, which contains a fluoroalcohol functional group, and has the following structure:

-C(Rf)(Rf,)OH 其中Rf與Rf •均如上述; (c4) 一種含氟共聚物,其包含衍生自至少一種乙烯系不 飽和化合物之重複單位,該化合物含有氟基醇官能基, 具有以下結構:-C (Rf) (Rf,) OH where Rf and Rf are both as described above; (c4) a fluorinated copolymer comprising repeating units derived from at least one ethylenically unsaturated compound containing a fluoroalcohol function Base with the following structure:

-ZCH2C(Rf)(Rf,)OH 其中Rf與Rf,均如上述;及Z為一種元素,選自元素週期表 (CAS版本)之VA族及其他族。典型上,χ為硫、氧、 34- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)-ZCH2C (Rf) (Rf,) OH wherein Rf and Rf are as described above; and Z is an element selected from the VA group and other groups of the periodic table (CAS version). Typically, χ is sulfur, oxygen, 34- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm)

Hold

591338 A7 B7 五、發明説明(31 ) 氮或磷原子; (c5) 一種含氟聚合體,其包含以下結構:591338 A7 B7 V. Description of the invention (31) Nitrogen or phosphorus atom; (c5) A fluorine-containing polymer, which contains the following structure:

裝 其中各R40、RC、反42及#3係獨立為氫原子,画原子含 有1至10個碳原子之烴基,被至少一個〇、s、N、p或鹵 素取代且具有!至12個碳原子之烴基,例如燒氧基、幾酸 基、羧酸酯基或含有以下結構之官能基·· 訂Each of R40, RC, trans 42 and # 3 is independently a hydrogen atom, and the atom containing a hydrocarbon group of 1 to 10 carbon atoms is substituted with at least one 0, s, N, p or halogen and has! Hydrocarbyl groups of up to 12 carbon atoms, such as alkoxy, carboxylic acid, carboxylate, or functional groups containing the following structure ...

線 -C(Rf)(Rf,)OR44 其中Rf與Rf,均如上述;r4 4為氫原子,或酸·或驗-不安定 保護基;v為重複單位在聚合體中之數目;〜為〇4;至少 一個重複單位具有一種結構,其中至少一個R4 〇、R4 1、 R42 及 R43 含有結構 C(Rf)(Rf,)OR44,例如 R40、R41&amp;R42 為氫 原子,且 R43 為 ch2och2c(cf3)2och2co2c(ch3)3 ,其中 CH2C02C(CH3)3為酸或鹼不安定保護基,或R43為 och2c(cf3)2och2co2c(ch3)3,其中 0CH2C02C(CH3)3 為酸或 鹼不安定保護基;及 (C6) —種聚合體,其包含: (i)衍生自至少一種乙烯系不飽和化合物之重複單 -35- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 B7Line-C (Rf) (Rf,) OR44 where Rf and Rf are as described above; r4 4 is a hydrogen atom, or an acid-or labile-unstable protecting group; v is the number of repeating units in the polymer; ~ is 〇4; at least one repeating unit has a structure in which at least one R4 〇, R4 1, R42 and R43 contain the structure C (Rf) (Rf,) OR44, for example R40, R41 &amp; R42 is a hydrogen atom, and R43 is ch2och2c ( cf3) 2och2co2c (ch3) 3, where CH2C02C (CH3) 3 is an acid or base labile protecting group, or R43 is och2c (cf3) 2och2co2c (ch3) 3, where 0CH2C02C (CH3) 3 is an acid or base labile protecting group ; And (C6) — a type of polymer comprising: (i) a repeating sheet derived from at least one ethylenically unsaturated compound-35- This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) 591338 A7 B7

位,該化合物含有氟基醇官能基,具有以下結 構· -C(Rf)(Rf,)〇H 其中Rf與Rf·均如上述;與 ⑻衍生自至少一種具有以下結構之乙缔系不飽和化 合物之重複單位: (h)(r45)〇c(r46)(cn) 其中R45為氫原子或CN ; 1146為(:1-(:8烷基、氫原 子或c〇2R47基團,其中為Ci-C8烷基或氫原 此氟聚合體或共聚物包含衍生自至少一種乙缔系不飽和 化合物之重複單位(討論於下文),該化合物含有氟基醇官 能基,其可具有氟烷基存在,作為氟醇基之一部份,且 係描述於前文關於共聚物(b)。此等氟烷基係如上述被稱 為Rf與Rf· ^ 正如熟諳聚合體技藝者所習知,乙缔系不飽和化合物係 進行自由基聚合反應,而得具有衍生自乙諦系不飽和化 合物之重複單位之聚合體。明確言之,具有以下結構之 乙缔系不飽和化合物:Position, the compound contains a fluoroalcohol functional group, and has the following structure--C (Rf) (Rf,) 0H wherein Rf and Rf · are as described above; and ⑻ is derived from at least one ethylenically unsaturated group having the following structure Compound repeating unit: (h) (r45) 〇c (r46) (cn) where R45 is a hydrogen atom or CN; 1146 is a (: 1-(: 8 alkyl group, hydrogen atom or a c02R47 group, where is Ci-C8 alkyl or hydrogen. This fluoropolymer or copolymer contains repeating units (discussed below) derived from at least one ethylenically unsaturated compound, which contains a fluoroalcohol functional group, which may have a fluoroalkyl group. Exists, as part of the fluoroalcohol group, and is described above with respect to the copolymer (b). These fluoroalkyl groups are referred to as Rf and Rf as described above. As is known to those skilled in polymer arts, B The associated unsaturated compound undergoes a radical polymerization reaction to obtain a polymer having a repeating unit derived from an ethylenic unsaturated compound. Specifically, the ethylenically unsaturated compound has the following structure:

係描述於上文關於共聚物(al)。 根據本發明之各含氟共聚物,具有在157奈米波長下之 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 B7 五、發明説明(33 ) 吸收係數低於4.0微米-1,於此波長下較佳係低於3.5微米-1 ’於此波長下更佳係低於3.0微米1 ’而於此波長下又更 佳係低於2.5微米_1。 包含氟基醇官能基之本發明氟化聚合體、光阻及方法, 可具有以下結構:Is described above with respect to the copolymer (al). Each fluorinated copolymer according to the present invention has the paper size at a wavelength of 157 nanometers and is applicable to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 591338 A7 B7 5. Description of the invention (33) Low absorption coefficient At 4.0 microns-1, it is preferably below 3.5 microns-1 'at this wavelength, more preferably below 3.0 microns1' at this wavelength, and more preferably below 2.5 microns_1 at this wavelength. The fluorinated polymer, photoresist and method of the present invention containing a fluoroalcohol functional group may have the following structure:

-ZCH2C(Rf)(Rf,)OH 其中Rf與Rf,均如上述;Z係如上述。 含有氟基醇官能基且在本發明範圍内之代表性共單體之 一些說明性但非限制性實例,係於下文提出:-ZCH2C (Rf) (Rf,) OH wherein Rf and Rf are as described above; Z is as described above. Some illustrative but non-limiting examples of representative comonomers that contain fluoroalcohol functionality and are within the scope of the present invention are set out below:

CH2C(CF3)2〇HCH2C (CF3) 2〇H

CH20CH2C(CF3)20HCH20CH2C (CF3) 20H

ch2c(cf3)2ohch2c (cf3) 2oh

CH20CH2C(CF3)20HCH20CH2C (CF3) 20H

CH2=CHOCH2CH2OCH2C(CF3)2OH CH2=CHO(CH 2)4OCH 2C(CF 3)2OHCH2 = CHOCH2CH2OCH2C (CF3) 2OH CH2 = CHO (CH 2) 4OCH 2C (CF 3) 2OH

〇一CH2〇(CF3)2〇H 〇一ch2c(cf3)2〇h 可於最初提供交聯及接著分裂(例如在曝露於強酸時)之 各種雙官能性化合物,亦可在本發明共聚物中作為共單 體使用。作為說明性但非限制性實例,雙官能性共單體 NB-F-OMOMO-F-NB係令人滿意地在本發明共聚物中作為共 -37 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 B7 五、發明説明(34 ) 單體。其與類似雙T能性共單體,當存在於本發明光阻 組合物之共聚物成份中時,可獲得共聚物,其係為較高 分子量且係為經輕微X聯之材料。摻入此等包含雙官能 性單體之共聚物之光阻組合物,可具有經改良之顯像與 成像特性,因在曝光時(其會以光化學方式產生強酸,如 下文解釋),其會造成雙官能性基團分裂,及因此極顯著 降低分子量,此等因素可提供大為改良之顯像與成像特 性(例如,經改良之對比)。此等氟醇基團及其具體實施 例,係更洋細地如上文及在2〇〇〇年4月28日提出申請之 PCT/US00/11539 中所述。 存在於腈/氟基醇聚合體中之至少一部份腈官能基,係 由於併入衍生自至少一種乙婦系不飽和化合物之重複單 位所造成’邊化合物具有至少一個腈基且具有以下結 構· (H)(R48)C=C(R49)(CN) 其中R48為氫原子或氰基(CN) ; R4 9為範圍從i至約8個碳原 子之烷基,C〇2R5〇基團,其中R5〇為範圍至約8個碳原 子之烷基,或氫原子。丙烯腈、甲基丙烯腈、反丁烯二 腈(反式-1,2-二氰基乙烯)與順丁缔二腈(順式_丨,2_二氰基乙 烯)係為較佳。丙缔腈為最佳。 月月/氟基醇聚合體典型特徵在於具有衍生自至少一種乙 缔系不飽和化合物之重複單位,其含有氟基醇官能基, 存在於腈/氟基醇聚合體中,約10至約6〇莫耳百分比, 及衍生自至少一種乙缔系不飽和化合物之重複單位,其 -38- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)〇 一 CH2〇 (CF3) 2〇H 〇ch2c (cf3) 20h Various bifunctional compounds that can initially provide cross-linking and subsequent cleavage (for example, when exposed to strong acids), can also be used in the copolymers of the present invention Used as a comonomer. As an illustrative but non-limiting example, the bifunctional comonomer NB-F-OMOMO-F-NB is satisfactorily used in the copolymers of the present invention as a total of -37. The paper size applies to Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 591338 A7 B7 5. Description of the invention (34) monomer. When it is similar to the dual-T-functional comonomer, when present in the copolymer component of the photoresist composition of the present invention, a copolymer can be obtained, which is a material with a relatively high molecular weight and a slight X-linkage. Photoresist compositions incorporating such copolymers containing bifunctional monomers may have improved imaging and imaging characteristics due to exposure to light (which produces a strong acid photochemically, as explained below), which Factors that cause bifunctional group splitting, and therefore a significant reduction in molecular weight, can provide greatly improved imaging and imaging characteristics (eg, improved contrast). These fluoroalcohol groups and their specific examples are more detailed as described above and in PCT / US00 / 11539, filed on April 28, 2000. At least a portion of the nitrile functional groups present in the nitrile / fluoroalcohol polymer are caused by the incorporation of repeating units derived from at least one ethylenically unsaturated compound. The side compound has at least one nitrile group and has the following structure (H) (R48) C = C (R49) (CN) where R48 is a hydrogen atom or a cyano group (CN); R4 9 is an alkyl group ranging from i to about 8 carbon atoms, and the C02R50 group Wherein R50 is an alkyl group ranging from about 8 carbon atoms, or a hydrogen atom. Acrylonitrile, methacrylonitrile, transbutadionitrile (trans-1,2-dicyanoethylene), and cis-butadionitrile (cis-, 2-dicyanoethylene) are preferred. Acrylonitrile is the best. Yueyue / fluoroalcohol polymers are typically characterized by having repeating units derived from at least one ethylenically unsaturated compound, which contain fluoroalcohol functional groups, which are present in the nitrile / fluoroalcohol polymer, from about 10 to about 6 〇Moore percentage, and repeating units derived from at least one ethylenically unsaturated compound, which are -38- This paper size applies to China National Standard (CNS) A4 (210X297 mm)

裝 訂Binding

▲ 591338 A7 B7 五、發明説明(35 ) 含有至少一個腈基存在於聚合體中,約20至約80莫耳百 分比。更典型上針對達成低吸收係數值之腈/氟基醇聚 合體,其特徵在於具有衍生自至少一種乙烯系不飽和化 合物之重複單位,該化合物含有氟基醇官能基,以低於 或等於45莫耳百分比存在於聚合體中,且又更典型上為 低於或等於30莫耳百分比,並具有相對較小量含有腈基 之重複單位,造成聚合體之至少一部份餘額。 在一項具體實施例中,此聚合體包含至少一個經保護官 能基。該至少一個經保護官能基之官能基,典型上係選 自包括酸性官能基與鹼性官能基。經保護官能基之官能 基之非限制性實例,係為羧酸類與氟基醇類。 於另一項具體實施例中,腈/氟基醇聚合體可包含脂族 多環狀官能基。在此具體實施例中,含有脂族多環狀官 能基之腈/氟基醇聚合體之重複單位百分比,其範圍為 約1至約70,較佳為約10至約55莫耳% ;且更典型範圍為 約20至約45莫耳%。 除了明確指出及於本文中指稱者之外,此腈/氟基醇聚 合體可含有其他官能基,其附帶條件是芳族官能基較佳 係不存在於腈/氟基醇聚合體中。已發現芳族官能基存 在於此等聚合體中,會減損其透明性,且會造成其在遠 與極端UV區域中之過於強烈吸收,以致不適合使用於此 等波長下成像之層。 在一些具體實施例中,此聚合體係為分枝狀聚合體,包 含一或多個分枝鏈段,以化學方式沿著線性主鏈段連 -39 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)▲ 591338 A7 B7 5. Description of the invention (35) Contains at least one nitrile group present in the polymer, about 20 to about 80 mole percent. More typically for nitrile / fluoroalcohol polymers that achieve low absorption coefficient values, it is characterized by having repeating units derived from at least one ethylenically unsaturated compound, which contains a fluoroalcohol functional group, at a level of 45 or less The mole percentage is present in the polymer, and is more typically less than or equal to 30 mole percentage, and has a relatively small amount of repeating units containing nitrile groups, resulting in at least a portion of the polymer's balance. In a specific embodiment, the polymer comprises at least one protected functional group. The functional group of the at least one protected functional group is typically selected from the group consisting of an acidic functional group and a basic functional group. Non-limiting examples of protected functional groups are carboxylic acids and fluoroalcohols. In another embodiment, the nitrile / fluoroalcohol polymer may include an aliphatic polycyclic functional group. In this specific embodiment, the percentage of repeating units of the nitrile / fluoroalcohol polymer containing aliphatic polycyclic functional groups ranges from about 1 to about 70, preferably about 10 to about 55 mole%; and A more typical range is from about 20 to about 45 mole%. Except where explicitly stated and referred to herein, this nitrile / fluoroalcohol polymer may contain other functional groups with the proviso that the aromatic functional group is preferably not present in the nitrile / fluoroalcohol polymer. The presence of aromatic functional groups in these polymers has been found to detract from their transparency and cause them to absorb too strongly in the far and extreme UV regions, making them unsuitable for use in layers imaged at these wavelengths. In some specific embodiments, the polymerization system is a branched polymer, which includes one or more branched segments, which are chemically connected along the linear main chain segment -39-This paper applies Chinese National Standards (CNS) A4 size (210X 297 mm)

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線 591338 A7Line 591338 A7

接。此分枝狀聚合體可在至少一種乙烯系不飽和巨體成 伤與至少一種乙烯系不飽和共單體之自由基加成聚合期 間形成。此分枝狀聚合體可藉任何習用加成聚合方法製 j °此分枝狀聚合體或梳型聚合體可製自一或多種可相 谷之乙烯系不飽和巨體成份,與一或多種可相容之習用 乙埽系不飽和巨體成份,及一或多種可相容之習用乙缔 系不飽和單體成份。典型上,可加成聚合之乙烯系不飽 和單體成份係為丙烯腈、甲基丙烯腈、反丁烯二腈、順 丁缔一腈、經保護及/或未經保護之不飽和氟基醇類及 、.二保濩及/或未經保護之不飽和羧酸類。製造此類型分 枝狀聚合體之結構與方法,係針對上文聚合體類型(b)作討 論,且如W0 00/25178中所述。 具有至少一個氟基醇之氟聚合體,可進一步包含間隔 基’選自包括乙烯、α·烯烴、1,Γ-雙取代烯烴、乙婦基醇 類、乙烯基醚類及1,3-二烯類。 聚合體(d)包括全氟(2,2-二甲基-1,3-二氧伍圜烯)或 CX2=CY2之非晶形乙烯基均聚物,其中X = f或CF3,且Υ =-Η,或全氟(2,2-二甲基-1,3-二氧伍圜烯)與CX2=CY2i非晶形 乙缔系共聚物,該均聚物或共聚物係視情況含有一或多 種共單體CR51R52=CR53R54,其中各R51、R52、R53係獨立 選自Η或F,且其中R54係選自包括-F、-CF3、-OR55,其中 R55 為 CnF2n+l,其中 1 至 3,-OH (當 r53=h 時)及 Cl (當 R5 1、R52及R53 = F時)。聚合體⑷可另外包含CH2=CHCF3與 CF2=CF2,以 1 : 2 至 2 : 1 比例,CH2=CHF 與 CF2=CFC1,以 -40- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)Pick up. This branched polymer can be formed during the radical addition polymerization of at least one ethylene-based unsaturated macromonomer and at least one ethylene-based unsaturated comonomer. This branched polymer can be made by any conventional addition polymerization method. ° This branched polymer or comb-shaped polymer can be made from one or more phase-unsaturated ethylenically unsaturated macro-components, and one or more Compatible customary ethylenic unsaturated macro-components and one or more compatible customary ethylenic unsaturated monomer components. Typically, the addition-polymerizable ethylenically unsaturated monomers are acrylonitrile, methacrylonitrile, fumaronitrile, cis-butadiene-nitrile, and protected and / or unprotected unsaturated fluoro groups. Alcohols,. Dibao and / or unprotected unsaturated carboxylic acids. The structure and method of making this type of branched polymer is discussed with respect to the polymer type (b) above and as described in WO 00/25178. A fluoropolymer having at least one fluoroalcohol, which may further include a spacer group, selected from the group consisting of ethylene, α · olefins, 1, Γ-disubstituted olefins, ethynyl alcohols, vinyl ethers, and 1,3-bis Olefins. Polymer (d) includes perfluoro (2,2-dimethyl-1,3-dioxolene) or CX2 = CY2 amorphous vinyl homopolymer, where X = f or CF3, and Υ = -Η, or perfluoro (2,2-dimethyl-1,3-dioxolene) and CX2 = CY2i amorphous ethylenic copolymer, the homopolymer or copolymer contains one or A variety of comonomers CR51R52 = CR53R54, where each R51, R52, R53 is independently selected from Η or F, and where R54 is selected from the group consisting of -F, -CF3, -OR55, where R55 is CnF2n + l, where 1 to 3 , -OH (when r53 = h) and Cl (when R5 1, R52 and R53 = F). Aggregate can additionally contain CH2 = CHCF3 and CF2 = CF2, with a ratio of 1: 2 to 2: 1, CH2 = CHF and CF2 = CFC1, with -40- This paper size applies to China National Standard (CNS) A4 specifications (210X (297 mm)

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線 591338 A7 B7 五、發明説明(37 ) 1 : 2 至 2 : 1 比例,CH2=CHF 與 CC1H=CF2,以 1 : 2 至 2 : 1 比 例,全氟(2-亞甲基斗甲基-1,3-二氧伍圜)以任何比例與全氟 (2,2-二甲基-1,3-二氧伍圜烯),全氟(2-亞甲基-4-甲基-1,3-二氧 伍圜)以任何比例與二氟亞乙烯之非晶形乙烯基共聚物, 其係為非晶形,及全氟(2-亞甲基冰甲基-1,3-二氧伍圜)之均 聚物。 此等聚合體係藉由此項技藝中關於氟聚合體已知之聚合 方法製成。所有此等聚合體均可以下述方式製成,將單 體、惰性流體(譬如 CF2C1CC12F、CF3CFHCFHCF2CF3 或二氧 化碳)及可溶性自由基引發劑,譬如HFPO二聚體過氧化物 L或Perkadox®16N,密封於冷卻式熱壓鍋中,然後按適當方 式加熱以引發聚合反應。 CF3 CF2 CF2 OCF(CF3 )(C=0)00(C=0)CF(CF3 )OCF2 CF2CF3 1 對HFPO二聚體過氧化物L而言,室溫(〜25°C )為合宜聚合 反應溫度,而對Perkadox®而言,可使用60至90°C之溫度。 依單體與聚合反應溫度而定,壓力可從大氣壓力改變至 500 psi或更高。然後,當聚合體以不溶性沉澱物形成時, 可藉過濾分離,或當可溶於反應混合物中時,可藉蒸發 或沉殿分離。在許多情況中,表觀上乾燥之聚合體仍然 保有相當可觀之溶劑及/或未反應之單體,且必須進一 步在真空烘箱中乾燥,較佳係在氮氣流出下。許多聚合 體亦可藉由水性乳化聚合製成,其係以下述方式達成, 將去離子水,引發劑譬如過硫酸銨或Vazo®56 WSP,單體, -41 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Line 591338 A7 B7 V. Description of the invention (37) 1: 2 to 2: 1 ratio, CH2 = CHF and CC1H = CF2, at a ratio of 1: 2 to 2: 1, perfluoro 1,3-dioxolane) in any ratio with perfluoro (2,2-dimethyl-1,3-dioxolene), perfluoro (2-methylene-4-methyl-1 , 3-dioxolane) is an amorphous vinyl copolymer with difluoroethylene in any ratio, which is amorphous, and perfluoro (2-methylene ice methyl-1,3-dioxolane) Ii) homopolymer. These polymerization systems are made by polymerization methods known in the art about fluoropolymers. All these polymers can be made by sealing monomers, inert fluids (such as CF2C1CC12F, CF3CFHCFHCF2CF3, or carbon dioxide) and soluble free-radical initiators, such as HFPO dimer peroxide L or Perkadox® 16N, in a sealed In a cooled autoclave, then heat as appropriate to initiate polymerization. CF3 CF2 CF2 OCF (CF3) (C = 0) 00 (C = 0) CF (CF3) OCF2 CF2CF3 1 For HFPO dimer peroxide L, room temperature (~ 25 ° C) is a suitable polymerization reaction temperature For Perkadox®, a temperature of 60 to 90 ° C can be used. Depending on the monomer and polymerization temperature, the pressure can be changed from atmospheric to 500 psi or higher. Then, when the polymer is formed as an insoluble precipitate, it can be separated by filtration, or when it is soluble in the reaction mixture, it can be separated by evaporation or precipitation. In many cases, apparently dried polymers still retain considerable solvents and / or unreacted monomers and must be further dried in a vacuum oven, preferably under nitrogen flow. Many polymers can also be made by aqueous emulsion polymerization, which is achieved in the following way. Deionized water, initiators such as ammonium persulfate or Vazo®56 WSP, monomers, -41-This paper size applies Chinese national standards (CNS) A4 size (210 X 297 mm)

裝 訂Binding

591338 A7 _______ B7_ 五、發明説明(38 ) 界面活性劑譬如全氟辛酸銨,或分散劑譬如甲基纖維 素,密封於冷卻式熱壓鍋中,及加熱以引發聚合反應。 此聚合體可經由使任何所形成之乳化液破碎,過濾及乾 燥而分離。在所有情況中,氧應被排除在反應混合物之 外。可添加鏈轉移劑,譬如氯仿,以降低分子量。 製自經取代或未經取代乙缔基醚類之含腈/氟基醇聚合 體(e),係包含: (el) —種聚合體,其包含: (i) 付生自至少一種乙婦系不飽和化合物之重複單 位’该化合物包含乙烯基醚官能基且具有以下結 構· CH2=CH〇.R56 其中R56為具有1至丨2個碳原子之烷基,具有6至 約20個碳原子之芳基、芳烷基或烷芳基,或該基 團係被至少一個S、〇、N或P原子取代;.及 (ii) 衍生自至少一種具有以下結構之乙烯系不飽和化 合物之重複單位: (H)(R57)C=C(R58)(CN) 其中R? 7為氫原子或氰基;R5 8為範圍從丨至約8個碳原子 之坑基,C02 R5 9,其中R5 9為範圍從i至約8個碳原子之烷 基’或氫原子;及 (iii) 衍生自至少一種包含酸性基團之乙烯系不飽和化 合物之重複單位;及 (e2) —種聚合體,其包含·· -42- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 ___ B7 五、發明説明(39 ) (i)衍生自至少一種乙烯系不飽和化合物之重複單 位,該化合物包含乙烯基醚官能基與氟基醇官能 基,並具有以下結構:591338 A7 _______ B7_ V. Description of the Invention (38) A surfactant such as ammonium perfluorooctanoate or a dispersant such as methyl cellulose is sealed in a cooling autoclave and heated to initiate a polymerization reaction. This polymer can be separated by crushing, filtering and drying any emulsion formed. In all cases, oxygen should be excluded from the reaction mixture. A chain transfer agent such as chloroform may be added to reduce the molecular weight. Nitrile / fluoroalcohol-containing polymers (e) made from substituted or unsubstituted ethylene ethers, comprising: (el)-a polymer comprising: (i) surviving from at least one type Is a repeating unit of an unsaturated compound. This compound contains a vinyl ether functional group and has the following structure: CH2 = CH〇.R56 where R56 is an alkyl group having 1 to 2 carbon atoms and 6 to about 20 carbon atoms Aryl, aralkyl or alkaryl, or the group is substituted with at least one S, 0, N or P atom; and (ii) a repeat derived from at least one ethylenically unsaturated compound having the structure Unit: (H) (R57) C = C (R58) (CN) where R? 7 is a hydrogen atom or a cyano group; R5 8 is a pit group ranging from 丨 to about 8 carbon atoms, C02 R5 9, where R5 9 is an alkyl 'or hydrogen atom ranging from i to about 8 carbon atoms; and (iii) a repeating unit derived from at least one ethylenically unsaturated compound containing an acidic group; and (e2) a polymer, It contains ·· -42- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 591338 A7 ___ B7 V. Description of the invention (39) (i) A repeating unit derived from at least one ethylenically unsaturated compound containing a vinyl ether functional group and a fluoroalcohol functional group and having the following structure:

C(R6 〇 XR6 1 H:(r6 2 &gt;〇_D-C(Rf )(Rf,)〇H 其中R 、r6 1及r6 2係獨立為氫原子,範圍從i至 約3個碳原子之烷基;d為至少一個原子,其係 連接乙晞基醚官能基’經過氧原子,至義基醇官 月匕基之碳原子,Rf與Rf,均如上述;及 ⑻衍生自至少一種具有以下結構之乙烯系不飽和化 合物之重複單位: (h)(r57)c=c(r58)(cn) 其中R57為氫原子或氰基;R58為範圍從i至約8個碳原子 之烷基’ C〇2 R5 9基團,其中9為範圍從1至約8個碳原子 之燒基,或氫原子;及 (iii)衍生自至少一種包含酸性基團之乙缔系不飽和化 合物之重複單位。 此氟醇基團與具體實施例係更詳細地針對上文聚合體(c6) 加以描述。洛在含有氣基醇έ能基之一般性結構式(前文 所予)中且在本發明範圍内之乙烯基醚單體之一些說明性 但非限制性實例,係於下文提出: ch2 =choch2 ch2 och2 C(CF3 )2 OH ch2 =CHO(CH2 )4 〇ch2 C(CF3 )2 OH 腈基團及其具體實施例,及以腈與氟醇基團製成之線性 與分枝狀聚合體,及其具體實施例,亦更詳細地針對上 文聚合體(c6)加以描述與引用。 -43- $紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) ' 591338 A7 B7 五、發明説明(4〇C (R6 〇XR6 1 H: (r6 2 &gt; 〇_DC (Rf) (Rf,) 〇H where R, r6 1 and r6 2 are independently hydrogen atoms, ranging from i to about 3 carbon atoms of alkane D is at least one atom, which is connected to the ethyl atom ether functional group through the oxygen atom to the carbon atom of the isopropyl alcohol group, Rf and Rf, as described above; and ⑻ is derived from at least one of the following structures Repeating units of ethylenically unsaturated compounds: (h) (r57) c = c (r58) (cn) where R57 is a hydrogen atom or a cyano group; R58 is an alkyl group ranging from i to about 8 carbon atoms' C 〇2 R5 9 groups, wherein 9 is an alkyl group, or a hydrogen atom, ranging from 1 to about 8 carbon atoms; and (iii) a repeating unit derived from at least one ethylenically unsaturated compound containing an acidic group. This fluoroalcohol group and specific examples are described in more detail with respect to the polymer (c6) above. It is included in the general structural formula (previously described) containing an amino alcohol group and is within the scope of the present invention. Some illustrative but non-limiting examples of vinyl ether monomers are presented below: ch2 = choch2 ch2 och2 C (CF3) 2 OH ch2 = CHO (CH2) 4 〇ch2 C ( CF3) 2 OH nitrile group and specific examples thereof, and linear and branched polymers made of nitrile and fluoroalcohol groups, and specific examples thereof, and also for the polymer (c6) above in more detail Describe and quote. -43- $ Paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm) '591338 A7 B7 V. Description of the invention (4〇

此等聚合體可以約10至約99·5重量%之量存在,以全部 組合物(固體)之重量為基準。 iLj舌性成份ΠΜρ 若在聚合體摻合物中之聚合體不為光活性,則本發明之 組合物可含有光活性成份(PAC),其並未以化學方式結合 至含氟聚合體,意即光活性成份係為組合物中之個別成 份。光活性成份通常為在曝露於光化輻射時會產生無論 是酸或鹼之化合物。若酸係在曝露於光化輻射時產生, 則PAC係被稱為光酸發生劑(PAG)。若鹼係在曝露於光化 輻射時產生,則PAC係被稱為光鹼發生劑(PBG)。 供本發明用之適當光酸發生劑,包括但不限於丨)锍鹽 (結構I),2)碘鹽(結構Π),及3)異羥肟酸酯類,譬如結構 III。These polymers may be present in an amount of about 10 to about 99.5% by weight based on the weight of the entire composition (solid). iLj tongue component ΠΜρ If the polymer in the polymer blend is not photoactive, the composition of the present invention may contain a photoactive component (PAC), which is not chemically bound to the fluoropolymer, meaning That is, the photoactive ingredients are individual ingredients in the composition. Photoactive ingredients are compounds which, whether exposed to actinic radiation, can be acidic or alkaline. If the acid system is generated when exposed to actinic radiation, the PAC system is called a photoacid generator (PAG). If the alkali system is generated when exposed to actinic radiation, the PAC system is called a photobase generator (PBG). Suitable photoacid generators for use in the present invention include, but are not limited to,) phosphonium salts (Structure I), 2) iodonium salts (Structure II), and 3) hydroxamates, such as Structure III.

Order

在結構I-II中,Ri -R3係獨立為經取代或未經取代之芳 基,或經取代或未經取代之Ci-C^o烷基芳基(芳烷基)。代 表性芳基包括但不限於苯基與莕基。適當取代基包括但 _ 不限於羥基烷氧基(例如c10h21c^在結構I-II中之陰離子σ,可為但不限於SbF6-(六氟銻酸根)、 -44- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 591338 A7 B7 五、發明説明(41 ) CF3S〇3 (二氟甲基%酸根=二氟甲垸石黃酸根)及πκ全氣 丁基續酸根)。 驗/界面活性濟ij : 本發明之鹼與界面活性劑可用以改良成像性質。一些可 用之驗包括三丁胺、三戊胺、三己胺、三庚胺、三辛 胺、苯并咪唑、4-苯基吡啶、4,牡二胺基二苯基醚、菸鹼 醯胺、1-六氫吡啶基乙醇、三乙醇胺、弘六氫吡啶基义2_ 丙二醇、2,2,6,6-四甲基六氫吡啶醇、氫氧化四丁基銨、醋 酸四丁基銨及乳酸四丁基銨。一些可用之界面活性劑包 括全氟辛酸銨鹽、全氟壬酸銨鹽,z〇NYL(g)(DuP〇nt之商標 名)FSA、FSN、FSO及FSK氟基界面活性劑,聚氧化乙烯 硬脂基酸、聚氧化乙婦油基醚、聚氧化乙烯辛基苯基 謎、聚氧化乙烯壬基苯基醚、聚乙二醇二月桂酸酯、聚 乙一醇一硬脂酸醋、虎基苯續酸鹽、續酸基琥始酸納及 月桂基硫酸鈉。 驗與界面活性劑可以約0.001至約5,0% ,典型上為約〇 〇1 至約2.0%之量存在,以全部組合物之重量為基準。 溶解抑制齋1 各種溶解抑制劑可使用於本發明中。理想上,供遠與極 端UV光阻(例如193奈米光阻)用之溶解抑制劑(pi),係經 設計/選擇,以滿足包含特定DI添加劑之光阻組合物之 多重材料需求,包括溶解抑制、電漿蝕刻抵抗性及黏著 行為。一些溶解抑制化合物亦充作光阻組合物中之增塑 劑。 -45- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 B7 五、發明説明(42 )In structures I-II, Ri-R3 is independently a substituted or unsubstituted aryl group, or a substituted or unsubstituted Ci-C ^ oalkylaryl group (aralkyl). Representative aryl groups include, but are not limited to, phenyl and fluorenyl. Appropriate substituents include, but are not limited to, hydroxyalkoxy (for example, the anion σ of c10h21c ^ in structure I-II, which may be, but not limited to, SbF6- (hexafluoroantimonate), -44- This paper size applies to Chinese national standards (CNS) A4 specification (210X 297 mm) 591338 A7 B7 V. Description of the invention (41) CF3S〇3 (difluoromethyl% acid radical = difluoromethane sulfonate xanthate) and πκ all gas butyl diacetate). Test / Interfacial Activity: The base and surfactant of the present invention can be used to improve imaging properties. Some available tests include tributylamine, tripentylamine, trihexylamine, triheptylamine, trioctylamine, benzimidazole, 4-phenylpyridine, 4, diamine diphenyl ether, nicotinamide , 1-hexahydropyridylethanol, triethanolamine, hexahydropyridinyl 2-propanediol, 2,2,6,6-tetramethylhexahydropyridinol, tetrabutylammonium hydroxide, tetrabutylammonium acetate and Tetrabutylammonium lactate. Some useful surfactants include ammonium perfluorooctanoate, ammonium perfluorononanoate, ZONYL (g) (trade name of DuPont) FSA, FSN, FSO, and FSK fluorine-based surfactants, polyethylene oxide stearin Base acid, polyethylene oxide oleyl ether, polyethylene oxide octyl phenyl mystery, polyethylene oxide nonyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol monostearate, tiger benzene Dibasic acid salts, dibasic sodium succinate and sodium lauryl sulfate. The test surfactant may be present in an amount of about 0.001 to about 5.0%, typically about 0.001 to about 2.0%, based on the weight of the entire composition. Dissolution Inhibition 1 Various dissolution inhibitors can be used in the present invention. Ideally, dissolution inhibitors (PI) for far and extreme UV photoresists (such as 193nm photoresist) are designed / selected to meet the multiple material needs of photoresist compositions including specific DI additives, including dissolution Inhibition, plasma etching resistance and adhesion behavior. Some dissolution inhibiting compounds also act as plasticizers in photoresist compositions. -45- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 591338 A7 B7 V. Description of the invention (42)

裝 多種膽汁鹽酯類(意即,膽酸鹽酯類)係特別可在本發明 之組合物中作為DI使用。已知膽汁鹽酯類係為遠UV光阻 之有效溶解抑制劑,以Reichmanis等人在1983年之研究工作 開始(E. Reichmanis等人,”取代基對於2-硝基字基醋遠UV光 阻之光敏性之作用”,J. Electrochem. Soc· 1983, 130, 1433-1437)。膽 汁鹽酯類作為DI係為特別吸引人之選擇,有數項原因, 包括其可得自天然來源,其具有高脂環族碳含量,及特 別是其在電磁光譜之遠與真空UV區域中為透明(例如,典 型上,其在193奈米下,係為高度地透明)。再者,膽汁鹽 酯類亦為吸引人之DI選擇,因其可經設計而具有廣範圍 之疏水性至親水性相容性,依羥基取代與官能基化而 定。 訂A variety of bile salt esters (i.e., bile esters) are particularly useful as DI in the compositions of the present invention. Bile salts and esters are known to be effective dissolution inhibitors for far-UV photoresistance, starting with the research work of Reichmanis et al. "The role of photosensitivity in resistance", J. Electrochem. Soc. 1983, 130, 1433-1437). Bile salt esters are particularly attractive choices for DI systems, for several reasons, including their availability from natural sources, their high cycloaliphatic carbon content, and their particularly high range in the electromagnetic spectrum and in the vacuum UV region. Transparent (for example, it is typically highly transparent at 193 nm). Furthermore, bile salt esters are also attractive DI choices, as they can be designed to have a wide range of hydrophobic to hydrophilic compatibility, depending on hydroxyl substitution and functionalization. Order

線 適合作為本發明添加劑及/或溶解抑制劑之代表性膽汁 酸與膽汁酸衍生物,包括但不限於下文所示者,其係如 下··膽酸(IV)、脫氧膽酸(V)、石膽酸(VI)、脫氧膽酸第三-丁酯(VII)、石膽酸第三-丁酯(VIII)及3-α-乙醯基石膽酸第 三-丁酯(IX)。膽汁酸酯類,包括化合物VII-IX,係為本發 明中之較佳溶解抑制劑。Threads are suitable as representative bile acids and bile acid derivatives of the additives and / or dissolution inhibitors of the present invention, including but not limited to those shown below, which are as follows: · Cholic acid (IV), deoxycholic acid (V), Lithocholic acid (VI), tertiary-butyl deoxycholate (VII), tertiary-butyl lithocholic acid (VIII), and tertiary-butyl 3-α-ethylithocholate (IX). Bile acid esters, including compounds VII-IX, are preferred dissolution inhibitors in the present invention.

脱軋膽酸 -46- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 591338Derolled cholic acid -46- This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 591338

抑制劑t量可依聚合體之選擇 人_ 多足热〆 ▲朴 谭而改變。當聚合體缺 可α Λ 代、田〜像形成時,溶解抑制劑 乂力口強光阻組合物之影像形成性質。 、本Y發明之組合物可含有選用之其他成份。可添加之其他 成份之實例,包括但不限於解析增強劑、黏著促進劑、 殘留物還原劑、塗覆助劑、增塑劑及Tg(玻璃轉移溫度) 改貝劑。交聯劑亦可存在於負性操作光阻組合物中。一 些典型交聯劑包括雙叠氮類,譬如硫化4,4f-二疊氮基二苯 與3,3 - —疊氮基二苯基戚。典型上,含有至少一種交聯劑 之負性操作組合物,亦含有適當官能基(例如不飽和C=C 鍵結),其可與在曝露於UV時產生之反應性物種(例如氮 烯)反應,以產生經交聯聚合體,其在顯像劑溶液中係不 可溶、分散或實質上溶脹。 Μ成光阻影後之方法 製備光阻影像於基材上之方法,係包括以下順序: -47- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐)The amount of inhibitor t can be changed according to the choice of polymer. When the polymer lacks α Λ generation and field formation, the image formation properties of the dissolution inhibitor 乂 Likou strong photoresist composition. 2. The composition of the invention of Y may contain other optional ingredients. Examples of other ingredients that can be added include, but are not limited to, resolution enhancers, adhesion promoters, residue reducing agents, coating aids, plasticizers, and Tg (glass transition temperature) modifiers. A cross-linking agent may also be present in the negative-acting photoresist composition. Some typical cross-linking agents include bisazides, such as 4,4f-diazidediphenyl sulfide and 3,3-azidediphenylimide. Typically, negative handling compositions containing at least one cross-linking agent also contain suitable functional groups (such as unsaturated C = C bonds) that can react with reactive species (such as nitrogenenes) that are generated when exposed to UV. React to produce a crosslinked polymer that is insoluble, dispersible, or substantially swellable in the developer solution. The method of making a photoresist after the photoresist is formed on the substrate, including the following sequence: -47- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm)

發明説明 (X)使光阻層以影像複製方式曝光,以形成經成像與未 經成像區域,其中該光阻層係製自一種光阻組合物,其 包含: (A) 選自包括⑷至(e)之聚合體,及其混合物; (B) 光活性成份; (C) 功能性化合物,選自包括鹼與界面活性劑;及 00使具有經成像與未經成像區域之經曝光光阻層顯Description of the Invention (X) The photoresist layer is exposed by image replication to form imaged and unimaged areas, wherein the photoresist layer is made from a photoresist composition comprising: (A) selected from the group consisting of (E) polymers and mixtures thereof; (B) photoactive ingredients; (C) functional compounds selected from the group consisting of alkalis and surfactants; and 00 to provide exposed photoresist with imaged and unimaged areas Layer display

像’以形成浮凸影像在基材上。 i影像複製方故H 光阻層係經由將光阻組合物塗敷至基材,並乾燥以移除 落劑而製成。經如此形成之光阻層在電磁光譜之紫外光 區域中係為敏感的,且尤其是對於波長$ 365奈米者。本 發明光阻組合物之影像複製曝光,可在許多不同UV波長 下達成,包括但不限於365奈米、248奈米、193奈米、157 奈米及較低波長。以影像複製方式曝光,較佳係以248奈 米、193奈米、157奈米或較低波長之紫外光達成,其更佳 係以193奈米、157奈米或較低波長之紫外光達成,且最佳 係以157奈米或較低波長之紫外光達成。以影像複製方式 曝光可無論是以數值方式使用雷射或等效裝置,或以非 數值方式利用光罩達成。使用雷射之數值成像係為較佳 的。供本發明組合物數值成像之適當雷射裝置,包括但 不限於氬-氟激元雷射,使用UV輸出在193奈米下,氪-氟 激元雷射’使用UV輸出在248奈米下,及氟(F2)雷射,使 用輸出在157奈米下。如前文所討論,由於利用較低波長 -48- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 591338 A7Image 'to form a relief image on the substrate. Therefore, the photoresist layer is made by applying a photoresist composition to a substrate and drying to remove the agent. The photoresist layer thus formed is sensitive in the ultraviolet region of the electromagnetic spectrum, and especially for wavelengths of $ 365 nanometers. The image reproduction exposure of the photoresist composition of the present invention can be achieved at many different UV wavelengths, including but not limited to 365 nm, 248 nm, 193 nm, 157 nm and lower wavelengths. Exposure by image reproduction, preferably achieved with UV light of 248 nm, 193 nm, 157 nm or lower wavelength, and more preferably achieved with UV light of 193 nm, 157 nm or lower wavelength , And the best is achieved with 157 nm or lower wavelength ultraviolet light. Image copying Exposure can be achieved either numerically using a laser or equivalent device, or non-numerically using a photomask. Numerical imaging using lasers is preferred. Suitable laser devices for numerical imaging of the composition of the present invention include, but are not limited to, argon-fluorine lasers using UV output at 193 nm, and thorium-fluorine lasers using UV output at 248 nm , And fluorine (F2) laser, use output at 157 nm. As discussed above, due to the use of lower wavelengths -48- this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 591338 A7

之UV光供影像複製曝光,係相當於較高解析度(解析度下 =),故利用較低波長(例如193奈米或157奈米或較低)通 苇優於利用較高波長(例如248奈米或較高)。 在本發明光阻組合物中之成份,必須含有足夠官能基 度、’以在影像複製曝光於uv光之後供顯像。此官能基較 2為酸或經保護酸,以致水性顯像能夠使用鹼性顯像 y,譬如氫氧化鈉溶液、氫氧化鉀溶液或氫氧化銨溶 液。 例如,在本發明光阻組合物中之聚合體(c)典型上為含酸 物貝包含至少一種含氟基醇之單體,具有以下結構單 位:UV light for image reproduction exposure is equivalent to higher resolution (at resolution =), so using lower wavelengths (eg 193nm or 157nm or lower) is better than using higher wavelengths (eg 248 nm or higher). The ingredients in the photoresist composition of the present invention must contain sufficient functionality, 'to be developed after the image is copied and exposed to UV light. This functional group is an acid or a protected acid compared to 2, so that aqueous imaging can use alkaline imaging, such as sodium hydroxide solution, potassium hydroxide solution, or ammonium hydroxide solution. For example, the polymer (c) in the photoresist composition of the present invention is typically an acid-containing shellfish containing at least one fluorine-containing alcohol monomer, and has the following structural units:

-C(Rf)(Rf,)〇H 其中心與Rf,均如上述。酸性氟醇基團之含量,係針對特定 組合物,經由使含水鹼性顯像劑中之良好顯像所需要之 量達最佳化而測得。 當含水可加工處理之光阻經塗覆或以其他方式塗敷至基 材且以影像複製方式曝露至UV光時,該光阻組合物之顯 像可能需要的是,黏合劑物質應含有足夠量之酸基(例如 氟醇基團)及/或經保護之酸基,其在曝光時係至少部份 去除保護,使得該光阻(或其他可光成像之塗料組合物)可 在含水鹼性顯像劑中加工處理。在正性操作光阻層之情 況中’光阻層係於顯像期間,在曝露於uv輻射之部份上 被移除,但在未曝光部份上,於顯像期間,係實質上不 -49 - 本紙張尺度適用中國國豕標準(CNS) A4規格(2l〇x297公釐) 591338 A7 B7 五、發明説明(46 ) 受影嚮,該顯像係藉由含水鹼性液體,譬如含有0.262 N之 氫氧化四甲基銨全水溶液(其中顯像係於25°C下,通常歷 經低於或等於120秒)。在負性操作光阻層之情況中,光阻 層係於顯像期間,在未經曝露於UV輻射之部份上被移 除,但於顯像期間,在經曝光部份上,係實質上不受影 嚮,該顯像係使用無論是臨界流體或有機溶劑。 於本文中使用之臨界流體,係為一或多種被加熱至溫度 接近或高於其臨界溫度,且經壓縮至壓力接近或高於其 臨界壓力之物質。在本發明中之臨界流體,係至少在該 流體之臨界溫度下方高於15°C之溫度,且係至少在該流體 之臨界壓力下方高於5大氣壓之壓力下。二氧化碳可用於 本發明中之臨界流體。各種有機溶劑亦可在本發明中作 為顯像劑使用。其包括但不限於齒化溶劑與非函化溶 劑。齒化溶劑係為典型的,而氟化溶劑係為更典型的。 基材 於本發明中所採用之基材,說明上而言,可為矽、氧化 矽、氮化矽,或各種其他使用於半導體製造上之材料。 實例 詞彙解釋 分析/度量法 bs δ 8-C (Rf) (Rf,) OH The center and Rf are as described above. The content of acidic fluoroalcohol groups is measured for a specific composition by optimizing the amount required for good development in an aqueous alkaline developer. When a water-processable photoresist is coated or otherwise applied to a substrate and exposed to UV light by image reproduction, the development of the photoresist composition may require that the adhesive substance should contain sufficient Acid groups (such as fluoroalcohol groups) and / or protected acid groups, which are at least partially removed from protection during exposure, so that the photoresist (or other photoimageable coating composition) can Processing in sexual imaging agents. In the case where the photoresist layer is positively operated, the photoresist layer is removed during the development, and the portion exposed to the UV radiation is removed, but the unexposed portion is not substantially changed during the development. -49-This paper size is in accordance with China National Standard (CNS) A4 (2l0x297 mm) 591338 A7 B7 V. Description of the invention (46) Affected by the direction of the image, this image is obtained by using an aqueous alkaline liquid, such as containing 0.262 N aqueous solution of tetramethylammonium hydroxide (where the imaging system is at 25 ° C and usually takes less than or equal to 120 seconds). In the case of a negative-acting photoresist layer, the photoresist layer is removed during the development and is not exposed to UV radiation, but during the development, the exposed portion is essentially It is unaffected by the development, and the development system uses a critical fluid or an organic solvent. A critical fluid, as used herein, is one or more substances that are heated to a temperature near or above their critical temperature and compressed to a pressure near or above their critical pressure. The critical fluid in the present invention is a temperature higher than 15 ° C at least below the critical temperature of the fluid, and a pressure higher than 5 atm below the critical pressure of the fluid. Carbon dioxide can be used as a critical fluid in the present invention. Various organic solvents can also be used as the developer in the present invention. These include, but are not limited to, dentinizing solvents and dissolving solvents. Toothed solvents are typical, while fluorinated solvents are more typical. Substrate The substrate used in the present invention is, for illustrative purposes, silicon, silicon oxide, silicon nitride, or various other materials used in semiconductor manufacturing. Example Lexical Analysis / Measurement bs δ 8

NMR iHNMR 13 C NMR -50- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)NMR iHNMR 13 C NMR -50- This paper size is applicable to China National Standard (CNS) A4 (210X297 mm)

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寬廣單峰 於所指示溶劑中度量之NMR化學位移 克 核磁共振 質子NMR 碳-13 NMR 591338 A7 B7 五、發明説明(47 ) 19fnmr S sec. m mL mm 氟-19NMR 秒 多重峰 毫升 毫米 T 丄g Mn Mw P = Mw/Mn 吸收係▲ 玻璃轉移溫度 特定聚合體之數目平均分子量 特定聚合體之重量平均分子量 特定聚合體之多分散性 AC = A/b , 其中 A 為吸光率 = Log10(l/T),及b=薄膜厚度(微米), 其中T =透光率,如下文定義。 透光率 透光率Τ =被試樣所傳送之輻射功 率,對入射在試樣上之輻射功率之比 例,且係對特定波長(例如奈米)度 量。 化學品/單體 AA 丙烯酸 AIBN Aldrich 化學公司(Milwaukee, WI) 2,2’-偶氮雙異丁腈 Aldrich 化學公司(Milwaukee, WI) CFC-113 1,1,2-三氣三氟乙烷 HFIBO MEK (E.I. du Pont de Nemours 公司(Wilmington, DE) 六氟環氧異丁烷 2- 丁酮 NB Aldrich 化學公司(Milwaukee,WI) 正葙烯=雙環并[2.2.1]庚-2-烯 Aldrich 化學公司(Milwaukee,WI) Perkadox®16 N 過二碳酸二-(4_第三-丁基環己基)酯 Noury 化學公司(Burt,NY) PGMEA 丙二醇甲基醚醋酸酯 一: tBA TCB Aldrich 化學公司(Milwaukee,WI) 丙烯酸第三-丁酯 三氯苯 -51 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐) 591338 A7 B7 五、發明説明(48 TFE Aldrich 化學公司(Milwaukee, WI) 四氟乙烯 THF (Ε· I. du Pont de Nemours 公司(Wilmington,DE) 四氫决喃 Vazo®52 Aldrich 化學公司(Milwaukee, WI) 2,4-二甲基-2,2’-偶氮雙(戊腈) (Ε· I. du Pont de Nemours 公司(Wilmington, DE) f3 NB-F-0-t-BuAc ^s.0CH2C0CH2C02C(CH3)3 QT ^ ip3 NB-F-O-t-BuAc ^Yy^CH20CH2C0CH2C02C(CH3)3Broad singlet NMR chemical shift measured in indicated solvent g Nuclear magnetic resonance proton NMR Carbon-13 NMR 591338 A7 B7 V. Description of the invention (47) 19fnmr S sec. M mL mm Fluorine-19 NMR multiple peak millimeter millimeter T 丄 g Mn Mw P = Mw / Mn absorption system ▲ glass transition temperature number of specific polymers average molecular weight specific polymers weight average molecular weight polydispersity of specific polymers AC = A / b where A is absorbance = Log10 (l / T), and b = film thickness (micrometers), where T = light transmittance, as defined below. Transmittance Transmittance T = the ratio of the radiant power transmitted by the sample to the radiant power incident on the sample, and it is a measure of a specific wavelength (eg nanometer). Chemicals / Monomer AA Acrylic acid AIBN Aldrich Chemical Company (Milwaukee, WI) 2,2'-Azobisisobutyronitrile Aldrich Chemical Company (Milwaukee, WI) CFC-113 1,1,2-trifluorotrifluoroethane HFIBO MEK (EI du Pont de Nemours (Wilmington, DE) hexafluoroepoxyisobutane 2-butanone NB Aldrich Chemical Company (Milwaukee, WI) n-pinene = bicyclo [2.2.1] hept-2-ene Aldrich Chemical Company (Milwaukee, WI) Perkadox® 16 N Di- (4-tertiary-butylcyclohexyl) peroxydicarbonate Noury Chemical Company (Burt, NY) PGMEA Propylene Glycol Methyl Ether Acetate One: tBA TCB Aldrich Chemical Company (Milwaukee, WI) Tertiary-Butyl Acrylate Trichlorobenzene-51-This paper size applies Chinese National Standard (CNS) A4 (210 x 297 mm) 591338 A7 B7 V. Description of the invention (48 TFE Aldrich Chemical Company) (Milwaukee, WI) Tetrafluoroethylene THF (E. I. du Pont de Nemours, Inc. (Wilmington, DE) Tetrahydro Vran® 52 Aldrich Chemical Company (Milwaukee, WI) 2,4-dimethyl-2,2 '-Azobis (valeronitrile) (E. I. du Pont de Nemours (Wilmington, DE) f3 NB-F-0-t-BuAc ^ s.0CH2C0CH2C02C (CH3) 3 QT ^ ip3 NB-F-O-t-BuAc ^ Yy ^ CH20CH2C0CH2C02C (CH3) 3

Kp cf3Kp cf3

CH2XCH2X

NB-Me-OH 、 X=〇HNB-Me-OH, X = 〇H

NB-Me-F-OH X=〇CH2C(CF3)2〇H NB-Me-F-OMOM X=〇CH2C(CF3)2OCH2OCH3NB-Me-F-OH X = 〇CH2C (CF3) 2〇H NB-Me-F-OMOM X = 〇CH2C (CF3) 2OCH2OCH3

NB^OAc X=OCOCH3NB ^ OAc X = OCOCH3

NB-OH X=〇HNB-OH X = 〇H

NB-F-OH X:OCH2C(CF3)2〇H NB-F-OMOM . X=〇CH2C(CF3)2OCH2〇CH3NB-F-OH X: OCH2C (CF3) 2〇H NB-F-OMOM. X = 〇CH2C (CF3) 2OCH2〇CH3

VB-F-OH CH2CHOCH2CH2OCH2C(CF3)2〇H VE-F-OMOM CH2=CHOCH2CH2OCH2C(CF3)2〇CH2OCH3 紫外光 極端UV 電磁光譜在紫外光中之區域, 從10奈米至200奈米 其範圍 遠uv 電磁光譜在紫外光中之區域, 從200奈米至300奈米 其範圍 UV 電磁光譜之紫外光區域,其範圍從1〇 奈米至390奈米 近uv 電磁光譜在紫外光中之區域, 從300奈米至390奈米 其範圍 -52- 本紙張尺度適用中國國家橾準(CNS) A4規格(210x 297公釐) 591338 A7 B7 五、發明説明(49 ) 實例1 : TFE/NB-F-OH/tBA三聚物之合成 NB-F-OH之合成如下: 將裝有機械攪拌器、添液漏斗及氮氣入口管之乾燥圓底 燒瓶,以氮排氣,並裝入19 7克(〇 78莫耳)95%氫化鈉與 500毫升無水DMF。使經攪拌之混合物冷卻至5t:,並逐滴 添加80.1克(0.728莫耳)外向_5-正莅缔-2-醇,以致使溫度保 持低於15 C。將所形成之混合物撥摔丨/2小時,於室溫下 逐滴添加HFIB0 (131克,0.728莫耳)。將所形成之混合物於 室溫下攪拌過夜。添加甲醇(4〇毫升),並在減壓下,於迴 轉式蒸發器上,移除大部份DMF。將殘留物以200毫升水 處理,並添加冰醋酸直到pH值為約8.0。以3 X 150毫升醚 萃取含水混合物。將合併之醚萃液以3 X 150毫升水與150 亳升鹽水洗滌,以無水硫酸鈉脫水乾燥,及於迴轉式蒸 發器上濃縮成油。於0.15-0.20托及鍋溫30-60°C下進行矽藻 土蒸餾,獲得 190.1 克(90%)產物。1HNMR(5CD2C12)1·10-1.30(m,lH),1.50(d,lH),1.55- 1.65 (m,1H),1.70 (s,1H),1.75 (d,1H),2.70 (s,1H),2.85 (s,1H),3.90 (d,1 H),5·95 (s,1H),6.25 (s,1H)。使以相同方式製成之另一試樣接 受元素分析。對之計算值:C,45.53 ; H,4.17 ; F,39.28.實測值:C,44.98 ; H,4·22 ; F,38.25。NB-F-OH 之合成 係描述於 PCT Int. Appl. WO 2000067072 (2000 年 11 月 9 日公告) 中。 於200毫升不銹鋼熱壓鍋中添加按上述製成之48·7克 -53- 本紙張尺度逋用中國國家標準(CNS) A4規格(210 X 297公釐)VB-F-OH CH2CHOCH2CH2OCH2C (CF3) 2〇H VE-F-OMOM CH2 = CHOCH2CH2OCH2C (CF3) 2〇CH2OCH3 Ultraviolet light Extreme UV The region of the ultraviolet electromagnetic spectrum in the range from 10 nm to 200 nm The region of the UV electromagnetic spectrum in the ultraviolet light, which ranges from 200 nm to 300 nm. The region of the UV electromagnetic spectrum, which ranges from 10 nm to 390 nm. The region of the near UV electromagnetic spectrum in the ultraviolet light. The range is from 300nm to 390nm -52- This paper size applies to China National Standard (CNS) A4 (210x 297 mm) 591338 A7 B7 V. Description of the invention (49) Example 1: TFE / NB-F Synthesis of -OH / tBA trimer The synthesis of NB-F-OH is as follows: A dry round bottom flask equipped with a mechanical stirrer, an addition funnel and a nitrogen inlet tube is vented with nitrogen and charged to 197 grams ( (078 mole) 95% sodium hydride with 500 ml of anhydrous DMF. The stirred mixture was allowed to cool to 5t :, and 80.1 g (0.728 mol) of exo-5-n-assono-2-ol was added dropwise so that the temperature was kept below 15C. The resulting mixture was dropped for / 2 hours, and HFIB0 (131 g, 0.728 mol) was added dropwise at room temperature. The resulting mixture was stirred at room temperature overnight. Methanol (40 ml) was added and most of the DMF was removed on a rotary evaporator under reduced pressure. The residue was treated with 200 ml of water and glacial acetic acid was added until the pH was about 8.0. The aqueous mixture was extracted with 3 X 150 ml of ether. The combined ether extracts were washed with 3 X 150 ml of water and 150 liters of brine, dried over anhydrous sodium sulfate, and concentrated on a rotary evaporator to an oil. Diatomite distillation was performed at 0.15-0.20 Torr and a pot temperature of 30-60 ° C to obtain 190.1 g (90%) of the product. 1HNMR (5CD2C12) 1.10-1.30 (m, 1H), 1.50 (d, 1H), 1.55- 1.65 (m, 1H), 1.70 (s, 1H), 1.75 (d, 1H), 2.70 (s, 1H ), 2.85 (s, 1H), 3.90 (d, 1 H), 5.95 (s, 1H), 6.25 (s, 1H). Another sample prepared in the same manner was subjected to elemental analysis. Calculated values: C, 45.53; H, 4.17; F, 39.28. Found: C, 44.98; H, 4.22; F, 38.25. The synthesis of NB-F-OH is described in PCT Int. Appl. WO 2000067072 (published November 9, 2000). Add 48 · 7 g of the above to a 200 ml stainless steel autoclave -53- This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm)

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線 591338 A7 B7 五、發明説明(5〇 ) (0.168莫耳)NB-F-OH,1·54克(0.012莫耳)丙烯酸第三-丁酯 (tBa, Aldrich化學公司),75毫升1,1,2-三氯三氟乙烷,及0.6 克Perkadox®16。將容器密閉,冷卻,抽氣及以氮滌氣數 次。然後,添加42克(0·42莫耳)四氟乙烯(TFE)。將熱壓鍋 以容器内含物,在50°C下攪拌約18小時,造成壓力從 294 psi改變至271 psi。使容器冷卻至室溫,並排氣至一大 氣壓。使用1,1,2-三氯三氟乙烷沖洗,以移除容器内含 物,獲得透明溶液。將此溶液慢慢添加至過量己烷中, 造成白色聚合體沉澱,使其在真空烘箱中乾燥過夜。產 量為 11.3 克(12% )。GPC 分析:Mn = 7300 ; Mw= 10300 ; Mw/Mn = 1.41。DSC分析:於第二次加熱時,發現Tg為135 °C。氟NMR光譜顯示吸收峰分別在-75.6 ppm (CF3)與-95至-125 ppm (CF2)處,確認併入NB-F-OH與TFE。藉由碳NMR分 析此聚合體,並藉由適當吸收峰之積分,發現含有39莫 耳% TFE、42莫耳% NB-F-OH及18莫耳% tBA。分析實測 值:C,43.75 ; H,3.92 ; F,40.45. 實例2 : TFE、NB-F-OH及丙烯酸第三-丁酯之三聚物,係使用下 述程序製成: 於約270毫升容章之金屬壓力容器中,添加71.05克NB-F-OH、0.64克丙烯酸第三-丁酯及25毫升1,1,2-三氯三氟乙 烷。使容器密閉,冷卻至約-15°C,並以氮加壓至400 psi, 及抽氣數次。將反應器加熱至50°C,並添加TFE,直到内 部壓力達到340 psi為止。將已使用1,1,2-三氯三氟乙烷稀釋 -54- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Line 591338 A7 B7 V. Description of the invention (50) (0.168 mole) NB-F-OH, 1.54 g (0.012 mole) tertiary-butyl acrylate (tBa, Aldrich Chemical Company), 75 ml 1, 1,2-trichlorotrifluoroethane, and 0.6 g of Perkadox®16. The container was sealed, cooled, evacuated and purged with nitrogen several times. Then, 42 g (0.42 mol) of tetrafluoroethylene (TFE) was added. Stir the autoclave with the contents of the container at 50 ° C for about 18 hours, causing the pressure to change from 294 psi to 271 psi. Allow the container to cool to room temperature and vent to atmospheric pressure. Rinse with 1,1,2-trichlorotrifluoroethane to remove the contents of the container to obtain a clear solution. This solution was slowly added to excess hexane, causing white polymers to precipitate and allowed to dry in a vacuum oven overnight. The output is 11.3 grams (12%). GPC analysis: Mn = 7300; Mw = 10300; Mw / Mn = 1.41. DSC analysis: On second heating, Tg was found to be 135 ° C. Fluorine NMR spectrum showed absorption peaks at -75.6 ppm (CF3) and -95 to -125 ppm (CF2), confirming the incorporation of NB-F-OH and TFE. This polymer was analyzed by carbon NMR, and by integration of appropriate absorption peaks, it was found to contain 39 mole% TFE, 42 mole% NB-F-OH, and 18 mole% tBA. Analytical measured values: C, 43.75; H, 3.92; F, 40.45. Example 2: Terpolymer of TFE, NB-F-OH and tertiary-butyl acrylate, made using the following procedure: About 270 ml In the metal pressure vessel of Rongzhang, 71.05 g of NB-F-OH, 0.64 g of third-butyl acrylate, and 25 ml of 1,1,2-trichlorotrifluoroethane were added. The container was sealed, cooled to about -15 ° C, pressurized to 400 psi with nitrogen, and evacuated several times. The reactor was heated to 50 ° C and TFE was added until the internal pressure reached 340 psi. Dilute the used 1,1,2-trichlorotrifluoroethane -54- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 玎Pretend

線 591338 A7 B7 五、發明説明(51 ) 至100毫升之75.5克NB-F-OH與9.39克丙烯酸第三-丁酯之溶 液,於0.10毫升/分鐘之速率下,泵送至反應器,歷經12 小時。與單體進料溶液之開始,同時將已使用1,1,2-三氟 三氯乙燒稀釋至75毫升之6.3克Perkadox®16N與30-35毫升醋 酸甲酯之溶液,於2.0毫升/分鐘之速率下,泵送至反應 器,歷經6分鐘,然後,於0.08毫升/分鐘之速率下,歷 經8小時。藉由添加TFE,使内部壓力保持在340 psi下,按 需要而定。16小時反應時間後,使容器冷卻至室溫,並 抽氣至1大氣壓。將回收之聚合體溶液慢慢添加至過量己 烷中,同時攪拌。過濾沉澱物,以己烷洗滌,並在真空 烘箱中乾燥。使所形成之固體溶於THF與1,1,2·三氯三氟乙 烷之混合物中,並慢慢添加至過量己烷中。過濾沉澱 物,以己烷洗滌,並在真空烘箱中乾燥過夜,而得47.5克 白色聚合體。自其13C NMR光譜,發現聚合體組成為35% TFE、42% NB-F-OH 及 22% tBA。DSC : Tg= 151°C。GPC : Μη = 6200 ; Mw = 9300 ; Mw/Mn = 1.50。分析實測值:C,44.71 ; H,4.01 ; F,39.38. 實例3 : NB-Me-Ff-OH之均聚物,係使用下述程序製成: 於氮氣下,使0.19克(0.49毫莫耳)烯丙基鈀錯合物[7?3-MeCHCHCH2)PdCl]2與0.34克(0.98毫莫耳)六氟銻酸銀懸浮於 氯苯(40毫升)中。將所形成之混合物於室溫下攪拌30分 — 鐘。然後將其過濾,以移除沉澱之AgCl,並添加另外10毫 升氣苯。將所形成之溶液添加至15.0克(49.0毫莫耳)NB-Me- -55- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Line 591338 A7 B7 V. Description of the invention (51) to 100 ml of a solution of 75.5 g of NB-F-OH and 9.39 g of tertiary butyl acrylate, pumped to the reactor at a rate of 0.10 ml / minute, after 12 hours. At the same time as the start of the monomer feed solution, at the same time, a solution of 6.3 g of Perkadox® 16N and 30-35 ml of methyl acetate which has been diluted to 75 ml with 1,1,2-trifluorotrichloroethane, at 2.0 ml / Pumped to the reactor at a rate of minutes for 6 minutes and then at a rate of 0.08 ml / minute for 8 hours. By adding TFE, keep the internal pressure at 340 psi as needed. After a reaction time of 16 hours, the container was cooled to room temperature and evacuated to 1 atmosphere. The recovered polymer solution was slowly added to an excess of hexane while stirring. The precipitate was filtered, washed with hexane, and dried in a vacuum oven. The resulting solid was dissolved in a mixture of THF and 1,1,2, trichlorotrifluoroethane and slowly added to an excess of hexane. The precipitate was filtered, washed with hexane, and dried in a vacuum oven overnight to obtain 47.5 g of a white polymer. From its 13C NMR spectrum, it was found that the polymer composition was 35% TFE, 42% NB-F-OH, and 22% tBA. DSC: Tg = 151 ° C. GPC: Μη = 6200; Mw = 9300; Mw / Mn = 1.50. Analytical measured values: C, 44.71; H, 4.01; F, 39.38. Example 3: A homopolymer of NB-Me-Ff-OH was prepared using the following procedure: Under nitrogen, 0.19 g (0.49 mmol) Ear) allylpalladium complex [7? 3-MeCHCHCH2) PdCl] 2 and 0.34 g (0.98 mmol) of silver hexafluoroantimonate were suspended in chlorobenzene (40 ml). The resulting mixture was stirred for 30 minutes at room temperature. It was then filtered to remove the precipitated AgCl and an additional 10 mL of gaseous benzene was added. Add the resulting solution to 15.0 grams (49.0 millimoles) of NB-Me- -55- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 訂Binding

線 591338 A7 B7 五、發明説明(52 )Line 591338 A7 B7 V. Description of the invention (52)

F-OH中。將所形成之反應混合物在室溫下攪拌三天。經 由在己烷中沉澱,分離粗產物聚合體。使此物質溶於丙 酮中,而得10重量%溶液,並經過0.2微米Teflon®濾器過 濾;然後,使丙酮濾液濃縮至乾燥,獲得7.8克加成共聚 物。GPC : Mn = 6387 ; Mw = 9104 ; Mw/Mn= 1.43。分析實測 值:C,46.28 ; H,4.81 ; F,34.22.聚合體之1 H NMR (CD2 Cl2)係與 下文所示之飽和乙烯基加成聚合體一致:F-OH. The resulting reaction mixture was stirred at room temperature for three days. The crude polymer was isolated by precipitation in hexane. This material was dissolved in acetone to obtain a 10% by weight solution and filtered through a 0.2 micron Teflon® filter; then, the acetone filtrate was concentrated to dryness to obtain 7.8 g of an addition copolymer. GPC: Mn = 6387; Mw = 9104; Mw / Mn = 1.43. Analytical and measured values: C, 46.28; H, 4.81; F, 34.22. The 1 H NMR (CD2 Cl2) of the polymer is consistent with the saturated vinyl addition polymer shown below:

裝 訂Binding

線 NB-F-OH/NB-F-0-t-BuAc共聚物係藉由聚合體改質,使用下 述程序合成: 於具有機械攪拌器、添液漏斗及回流冷凝管之500毫升 圓底燒瓶中,添加53.6克NB-F-OH乙婦基加成均聚物,其 係經計算以包含0.185莫耳六氟異丙醇基,200毫升乙腈及 30.6克(0.222莫耳)碳酸鉀。使此混合物回流0.5小時。逐滴 添加溴基醋酸第三-丁酯(10.8克,0.055莫耳),並使所形成 之混合物回流3小時。使混合物冷卻至室溫,並藉由添加 — 300毫升丙酮進行稀釋。然後,將混合物過濾,及在真空 下濃縮至約200毫升體積。將此濃縮混合物慢慢倒入5.4升 -56- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7 B7 五、發明説明(53 ) 1.0% HC1水溶液中。將所形成之沉澱物過濾,並以水洗 滌。然後,使沉澱物溶於200毫升丙酮中;於此溶液中添 加5毫升水與3毫升36% HC1水溶液之溶液。所形成之溶液 係稍微地混濁。將其倒入5.4升水中。將沉澱物以水洗滌 數次,並乾燥而得44.0克NB-F-OH/NB-F-0-t-BuAc共聚物。 1 9F NMR ( 5 丙酮-d6)- /373.1 (s,指定為得自 NB-F-0-t-BuAc 之單 位),-75.4 (s,指定為得自NB-F-OH之單位)。經由光譜之積 分,發現聚合體之組成為64 % NB-F-OH與36 % NB-F-0-t-BuAc。將聚合體試樣自2-庚酮之5%溶液,進行旋轉塗 覆。於157奈米下之吸收係數,在薄膜厚度47.2奈米下, 經測定係為3.15微米M,而在薄膜厚度45.7奈米下,為2.70 微米4。 實例5 : NB-Me-F-OH/NB-Me-F-0-t-BuAc共聚物,係藉由聚合體改 質,使用下述程序合成: 重複實例4,而具有下述例外:使用NB-Me-F-OH乙烯基 加成均聚物,代替NB-F-OH乙烯基加成均聚物,以合成NB-Me-F-OH/NB-Me-F-0-t-BuAc 共聚物。1 9 F NMR ( (5 丙酮-d6) -73.2 (s, 指定為得自NB-Me-F-O-t-BuAc之單位),-75.3 (s,指定為得自NB-Me-F-OH之單位)。藉由光譜積分,發現聚合體之組成為68 % NB-Me-F-OH 與 32% NB-Me-F-0-t-BuAc。 實例6 : 製備下列溶液,並磁攪拌過夜。 成份 重量(克) -57- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)The linear NB-F-OH / NB-F-0-t-BuAc copolymer was modified by the polymer and synthesized using the following procedure: On a 500 ml round bottom with a mechanical stirrer, liquid addition funnel and reflux condenser In the flask, 53.6 grams of NB-F-OH ethyl ethynyl addition homopolymer was calculated to contain 0.185 moles of hexafluoroisopropanol, 200 ml of acetonitrile, and 30.6 grams (0.222 moles) of potassium carbonate. This mixture was refluxed for 0.5 hours. Tertiary-butyl bromoacetate (10.8 g, 0.055 mole) was added dropwise, and the resulting mixture was refluxed for 3 hours. The mixture was allowed to cool to room temperature and diluted by adding-300 ml of acetone. The mixture was then filtered and concentrated under vacuum to a volume of about 200 ml. Slowly pour this concentrated mixture into 5.4 liters -56- This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 591338 A7 B7 V. Description of the invention (53) 1.0% HC1 aqueous solution. The formed precipitate was filtered and washed with water. Then, the precipitate was dissolved in 200 ml of acetone; to this solution was added a solution of 5 ml of water and 3 ml of a 36% HC1 aqueous solution. The resulting solution was slightly cloudy. Pour it into 5.4 liters of water. The precipitate was washed several times with water and dried to obtain 44.0 g of an NB-F-OH / NB-F-0-t-BuAc copolymer. 1 9F NMR (5 Acetone-d6)-/373.1 (s, designated as a unit derived from NB-F-0-t-BuAc), -75.4 (s, designated as a unit derived from NB-F-OH). Through the integration of the spectra, the polymer composition was found to be 64% NB-F-OH and 36% NB-F-0-t-BuAc. The polymer sample was spin-coated from a 5% solution of 2-heptanone. The absorption coefficient at 157 nm is 3.15 μm at a film thickness of 47.2 nm, and at a film thickness of 45.7 nm is 2.70 μm4. Example 5: NB-Me-F-OH / NB-Me-F-0-t-BuAc copolymer was synthesized by polymer modification using the following procedure: Example 4 was repeated with the following exceptions: use NB-Me-F-OH vinyl addition homopolymer instead of NB-F-OH vinyl addition homopolymer to synthesize NB-Me-F-OH / NB-Me-F-0-t-BuAc Copolymer. 1 9 F NMR ((5 acetone-d6) -73.2 (s, specified as a unit obtained from NB-Me-FOt-BuAc), -75.3 (s, specified as a unit obtained from NB-Me-F-OH) By spectral integration, the polymer composition was found to be 68% NB-Me-F-OH and 32% NB-Me-F-0-t-BuAc. Example 6: The following solutions were prepared and magnetically stirred overnight. Ingredient weight (G) -57- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

裝 訂Binding

線 591338 A7 B7 五、發明説明(% ) TFE/NB-F-OH/tBA共聚物(重量比: 進料 70/28/2 ;藉 13 C NMR 分 析,39/42/18),如實例1中所述 0.520 全氟辛酸銨鹽之2-庚酮溶液(0.011 重量 %) 5.121 石膽酸第三-丁酯 0.060 已溶於環己酮中之九氟烷磺酸三 苯基疏之6.82% (重量)溶液,其已 經過0.45微米PTFE注射濾器過濾 0.299 旋轉塗覆係使用Brewer Science公司100CB型組合旋轉塗覆 機/加熱板,於4英吋直徑”P”型&lt;100&gt;取向矽晶圓上達 成,顯像係於Litho Tech曰本公司之光阻顯像分析器(790型) 上進行。 此晶圓係以下述方式製成,沉積6毫升六甲基二矽氮烷 (HMDS)底塗劑,並於5000 rpm下旋轉10秒。然後,在經過 0.45微米PTFE注射濾器過濾後,沉積約3毫升上述溶液, 並於3000 rpm下旋轉60秒,及在120°C下烘烤60秒。 248奈米成像係經由使已塗覆之晶圓曝露至光線而達 成,該光線係經由使來自ORIEL 82421型之太陽模擬器(1000 瓦特)之寬帶UV光,通過248奈米干擾濾光片而獲得,該 濾光片係通過在248奈米下之約30%能量。曝光時間為30 秒,提供未減弱劑量為20.5毫焦耳/平方公分。利用具有 不同中性光密度之18位置之罩蓋,產生極多種曝光劑 量。於曝光後,使已曝光之晶圓在120°C下烘烤120秒。 晶圓係在氫氧化四甲基銨(TMAH)水溶液(ONKA NMD-3, 2.38 — % TMAH溶液)中,顯像60秒,以產生正影像。 實例7 : -58 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)Line 591338 A7 B7 V. Description of the invention (%) TFE / NB-F-OH / tBA copolymer (weight ratio: feed 70/28/2; analysis by 13 C NMR, 39/42/18), as in Example 1 The 0.520 2-heptanone solution of perfluorooctanoic acid ammonium salt (0.011% by weight) as described in 5.121 Tertiary-butyl lithocholic acid 0.060 Triphenylsulfonyl nonafluoroalkanesulfonate dissolved in cyclohexanone 6.82% (wt. ) Solution, which has been filtered through a 0.45 micron PTFE syringe filter for 0.299 spin coating using a Brewer Science 100CB combination spin coater / heating plate on a 4-inch diameter "P" type &lt; 100 &gt; oriented silicon wafer Yes, development was performed on a photoresist development analyzer (type 790) from Litho Tech. This wafer was fabricated in the following manner, depositing 6 ml of hexamethyldisilazane (HMDS) primer, and rotating at 5000 rpm for 10 seconds. Then, after filtering through a 0.45 micron PTFE syringe filter, about 3 ml of the above solution was deposited, rotated at 3000 rpm for 60 seconds, and baked at 120 ° C for 60 seconds. 248 nm imaging is achieved by exposing the coated wafer to light, which is obtained by exposing broadband UV light from an ORIEL 82421 solar simulator (1000 watts) through a 248 nm interference filter Obtained, the filter passes about 30% of the energy at 248 nm. The exposure time was 30 seconds, providing an unattenuated dose of 20.5 mJ / cm². The use of 18-position covers with different neutral optical densities produces a wide variety of exposure doses. After the exposure, the exposed wafer was baked at 120 ° C for 120 seconds. The wafer was developed in a tetramethylammonium hydroxide (TMAH) aqueous solution (ONKA NMD-3, 2.38-% TMAH solution) and developed for 60 seconds to produce a positive image. Example 7: -58-This paper size applies to China National Standard (CNS) A4 (210X 297 mm)

裝 訂Binding

線 591338 A7 B7 五、發明説明(55 ) 製備下列溶液,並經磁攪拌: 成份 重量Γ克) TFE/NB-F-OH/tBA 共聚物(35/42/22,當藉 由13 C NMR分析時),以類似實例2 中所述之方式製成 5.506 2-庚酮 48.652 已溶於2-庚酮中之九氟烷磺酸三苯 基锍之6.82% (重量)溶液,其已經 過0.45微升PTFE注射濾器過濾 2.842 於十份上述溶液之5.0克試樣中,添加0.107克0.0232M溶 液之已溶於2-庚酮之各下列鹼之一,其可得自Aldrich化學 公司(Milwaukee,WI),並攪拌過夜: A. 三辛胺 F. 2,2,6,6-四甲基六氫吡啶 B. 三乙醇胺 G. 2,2,6,6-四甲基斗六氫吡啶 醇 C. 1-六氫吡啶乙醇 Η. 1-丙基-4-六氫吡啶酮 D. 3-六氫吡啶基-1,2-丙二醇 I.乳酸四丁基銨* E. 1-六氫吡啶丙腈 J.氫氧化四丁基銨 *藉由添加氫氧化四丁基銨至乳酸乙酯中而製成 使所形成之試樣旋轉塗覆於基材上。旋轉塗覆係使用 Brewer Science公司100CB型組合旋轉塗覆機/力口熱板,於4 英吋直徑’’P”型&lt;100&gt;取向矽晶圓上達成。顯像係於 Litho Tech日本公司之光阻顯像分析器(790型)上進行。Line 591338 A7 B7 V. Description of the invention (55) The following solutions were prepared and magnetically stirred: Ingredient weight Γ g) TFE / NB-F-OH / tBA copolymer (35/42/22, when analyzed by 13 C NMR 5.) A solution of 5.562 2-heptanone 48.652 triphenylsulfonium nonafluorosulfonate dissolved in 2-heptanone was prepared in a manner similar to that described in Example 2. It had passed 0.45 A microliter PTFE syringe filter was used to filter 2.842. To 5.0 samples of ten of the above solutions, 0.107 g of a 0.0232M solution of one of the following bases, which had been dissolved in 2-heptanone, was added. WI), and stirred overnight: A. trioctylamine F. 2,2,6,6-tetramethylhexahydropyridine B. triethanolamine G. 2,2,6,6-tetramethylpyridinol C. 1-hexahydropyridine ethanolΗ. 1-propyl-4-hexahydropyridone D. 3-hexahydropyridyl-1,2-propanediol I. tetrabutylammonium lactate * E. 1-hexahydropyridine Propionitrile J. Tetrabutylammonium hydroxide * is prepared by adding tetrabutylammonium hydroxide to ethyl lactate, and the formed sample is spin-coated on a substrate. Spin coating was performed on a 4-inch diameter "P" type &lt; 100 &gt; oriented silicon wafer using a Brewer Science 100CB combined spin coater / orifice hot plate. The imaging was performed by Litho Tech Japan Photoresist development analyzer (type 790).

晶圓係以下述方式製成,沉積6毫升六甲基二矽氮烷 (HMDS)底塗劑,並於1000 rpm下旋轉5秒,然後於3500 rpm 下10秒。接著,將1-3毫升上述溶液,在經過0.2微米PTFE -59- 本紙張尺度逋用中國國家標準(CNS) A4規格(210 X 297公釐)The wafer was made in the following manner, depositing 6 ml of hexamethyldisilazane (HMDS) primer, and rotating at 1000 rpm for 5 seconds, and then at 3500 rpm for 10 seconds. Next, 1-3 ml of the above solution was passed through 0.2 micron PTFE -59- this paper size using Chinese National Standard (CNS) A4 (210 X 297 mm)

裝 訂Binding

線 591338 A7 _B7_ 五、發明説明(56 ) 注射濾器過濾後,進行沉積,並於1800 rpm下旋轉60秒, 及在120°C下烘烤60秒。 248奈米成像係經由使已塗覆之晶圓曝露至光線而達 成,該光線係經由使來自ORIEL 82421型太陽模擬器(1〇〇〇瓦 特)之寬帶UV光通過248奈米干擾濾光片而獲得,該濾光 片係通過在248奈米下之約30%能量。曝光時間為1〇秒, 提供未減弱之劑量13.5毫焦耳/平方公分。利用具有不同 中性光密度之18個位置之罩蓋,產生極多種曝光劑量。 於曝光後,將已曝光之晶圓在100°C下烘烤60秒。 晶圓係在氫氧化四甲基銨(TMAH)水溶液(Shipley,LDD-26W 顯像劑,0.26N TMAH溶液)中顯像10秒。此試驗係產生正 影像,其中下列透光劑量(毫焦耳/平方公分)係為具有上 述驗之配方所需要的: A· 3.9毫焦耳/平方公分 F· 3.9毫焦耳/平方公分 B. 3.2 ,, G. 3.9 ” C. 2.4 ,, H. 2.4 ” D. 3.2 ” I. 5.3 ” E· 6.8 ” J. 2.4 丨丨 種配方’其含有類似此實例中所述之三聚物及上述驗 Ϊ,使其以類似實例9中所述之方式曝光,顯像及測試, 並顯示解析上之改良。 實例8 : 重複實例7,並具有下述例外: 製備下列溶液,並經磁攪拌: -60- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A7Line 591338 A7 _B7_ V. Description of the invention (56) After being filtered by the syringe filter, it is deposited, rotated at 1800 rpm for 60 seconds, and baked at 120 ° C for 60 seconds. 248 nm imaging is achieved by exposing the coated wafer to light, which is achieved by passing broadband UV light from the ORIEL 82421 solar simulator (1000 watts) through a 248 nm interference filter And obtained, the filter passes about 30% of the energy at 248 nm. The exposure time was 10 seconds, providing an unabated dose of 13.5 millijoules / cm2. The use of 18-position covers with different neutral optical densities produces a wide variety of exposure doses. After the exposure, the exposed wafer was baked at 100 ° C for 60 seconds. The wafers were developed in a tetramethylammonium hydroxide (TMAH) aqueous solution (Shipley, LDD-26W developer, 0.26N TMAH solution) for 10 seconds. This test produces a positive image, in which the following light transmission doses (mJ / cm²) are required for the formulation with the above test: A · 3.9 mJ / cm² F · 3.9 mJ / cm² B. 3.2, , G. 3.9 ”C. 2.4”, H. 2.4 ”D. 3.2” I. 5.3 ”E · 6.8” J. 2.4 丨 Formulas' which contain a trimer similar to that described in this example and the above test It was exposed, developed and tested in a manner similar to that described in Example 9, and showed improvements in analysis. Example 8: Example 7 was repeated with the following exceptions: The following solutions were prepared and magnetically stirred: -60 -This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 591338 A7

重量(克) 6.607 46.983 3.410 成份 NB-Me-F-OH/NB-Me-F-O-Ac-tBu 共聚物 (68/32,當藉由1 9 ρ NMR分析時)類似 實例5中所述 2-庚酮 已溶於2_庚酮中之九氟烷磺酸三苯 基疏之6.82% (重量)溶液,其已經 過0.45微米PTFE注射濾器過濾 於十份上述溶液之5·〇克試樣中,添加〇 128克〇·〇232Μ溶Weight (g) 6.607 46.983 3.410 Composition NB-Me-F-OH / NB-Me-FO-Ac-tBu copolymer (68/32, when analyzed by 1 9 ρ NMR) is similar to that described in Example 5 2- Heptenone has a 6.82% (by weight) solution of triphenylsulfadecanesulfonate in 2-heptanone, which has been filtered through a 0.45 micron PTFE syringe filter in 5.0 grams of ten of the above solutions Add 〇128 克 〇232M dissolved

液之揭示於實例7而已溶於孓庚酮中之各鹼之一,並攪拌過 夜。 裝 晶圓係按實例7中所述進行塗覆與製備,惟曝光時間為 3秒’代替10秒,提供未減弱劑量為4 〇毫焦耳/平方公 分。此試驗產生正影像,其中下列透光劑量(毫焦耳/平 方公分)係為具有上述鹼之配方所需要的: A· 2.4毫焦耳/平方公分 F. 2.1毫焦耳/平方公分 B. 1.2 ” G. 1.2 ” C. 1.0 ” H. 1.2 M D· 1.2 ” I. 2.4 ” E. 2.1 ,, J· 2.4 ,· 實例A ·· 訂The liquid was disclosed in Example 7 and was dissolved in one of the bases in xanthone and stirred overnight. The wafer was coated and prepared as described in Example 7, except that the exposure time was 3 seconds' instead of 10 seconds, providing an unattenuated dose of 40 mJ / cm2. This test produces a positive image, in which the following light transmission doses (mJ / cm²) are required for the formulation with the above base: A · 2.4 mJ / cm² F. 2.1 mJ / cm² B. 1.2 ”G 1.2 ”C. 1.0” H. 1.2 MD · 1.2 ”I. 2.4” E. 2.1, J · 2.4, · Case A ·

線 製備下列溶液,經磁撥拌過夜,及在使用之前,經過 0.45微米PTFE注射濾器過滤: 成份 重量(克) NB-Me-F-OH/NB-Me-F-0-tBuAc (68/32)共 聚物,類似實例5製成 1.739 2-庚酮 12.364 -61 - 本紙張尺度適用中國國家搮準(CNS) A4規格(2i〇x 297公爱) 591338 A7 B7 五、發明説明(58 ) 已溶於環己酮中之九氟烷磺酸三苯 基锍之6.82% (重量)溶液,其已經過 0.45微米PTFE注射濾器過濾 0.897The following solutions were prepared by wire, and magnetically stirred overnight, and filtered through a 0.45 micron PTFE syringe filter before use: Ingredient weight (g) NB-Me-F-OH / NB-Me-F-0-tBuAc (68/32 ) Copolymer, similar to Example 5, made 1.739 2-heptanone 12.364 -61-This paper size applies to China National Standard (CNS) A4 (2i0x 297 public love) 591338 A7 B7 V. Description of the invention (58) A 6.82% (by weight) solution of triphenylphosphonium nonafluorosulfonate in cyclohexanone, which has been filtered through a 0.45 micron PTFE syringe filter to 0.897

將此光阻配方,在2000 rpm之速度下,旋轉澆鑄於8英吋 Si晶圓上,於120 °C下PAB 60秒後,產生經度量厚度2169 A 之薄膜。 所有成像與開架曝光係使用Exitech 157奈米微步進器施 行。使光阻配方旋轉塗覆於8英吋Si晶圓上,該晶圓係首 先在90°C下,使用六甲基二矽氮烷(HMDS)進行蒸氣底塗。 將所形成之薄膜輕微烘烤或塗敷後烘烤(PAB),在120°C下 進行60秒,然後使用Prometrix干涉儀度量其厚度,該干涉 儀係利用藉由可變角度光譜橢圓測量度量法,使用 J.A. Woollam VU301可變角度光譜橢圓測量計,所測得之 Cauchy係數。在Exitech步進器上,於開架曝光(典型上進行 100個曝光劑量),或使用無論是具有數值孔徑(N.A.) = 0.6 與部份相干性(σ) = 0.7之二元罩蓋,或具有N.A. = 0.6與σ =0.3之Levenson強相移罩蓋成像後,使晶圓在100°C下進行 曝光後烘烤(PEB) 60秒,接著為以Shipley LDD-26W 2.38%氫氧 化四甲基銨之60秒水坑顯像。然後,使已開架曝光之晶 圓,於Prometrix干涉儀上接受厚度度量,以測定厚度損失 對曝光劑量,並使用JEOL 7550頂部向下與傾斜掃描式電 子顯微鏡(SEM)檢查已成像之晶圓,及在一些情況中,製 作橫截面並使用Hitachi 4500 SEM檢查。 在曝光劑量為24毫焦耳/平方公分下,發現影像顯示在 140奈米解析下之特徵。 -62- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)This photoresist formulation was spin-cast on an 8-inch Si wafer at 2000 rpm, and after PAB at 120 ° C for 60 seconds, a film with a measured thickness of 2169 A was produced. All imaging and open-frame exposures were performed using an Exitech 157 nm microstepper. A photoresist formulation was spin-coated on an 8-inch Si wafer, which was first vapor-primed at 90 ° C using hexamethyldisilazane (HMDS). The formed film is lightly baked or post-coated (PAB) for 60 seconds at 120 ° C, and then the thickness is measured using a Prometrix interferometer, which is measured using a variable angle spectrum ellipse measurement Method, using the JA Woollam VU301 variable-angle spectroscopic ellipsometry, the Cauchy coefficient measured. On an Exitech stepper, open frame exposure (typically 100 exposure doses), or use a binary cover with either numerical aperture (NA) = 0.6 and partial coherence (σ) = 0.7, or have After imaging the Levenson strong phase shift cover with NA = 0.6 and σ = 0.3, the wafer was subjected to post-exposure baking (PEB) at 100 ° C for 60 seconds, followed by Shipley LDD-26W 2.38% tetramethyl hydroxide 60 seconds of ammonium puddle imaging. Then, the exposed wafer is subjected to thickness measurement on a Prometrix interferometer to determine the thickness loss versus the exposure dose, and the imaged wafer is inspected using a JEOL 7550 top-down and tilt scanning electron microscope (SEM). And in some cases, cross sections were made and inspected using Hitachi 4500 SEM. At an exposure dose of 24 millijoules per square centimeter, it was found that the image showed a characteristic at 140 nm resolution. -62- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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線 591338 A7 B7 五、發明説明(59 )Line 591338 A7 B7 V. Description of the invention (59)

實例9B 使用相同聚合體配方,但添加38微升0.5重量%乳酸四 丁基銨(TBALac)鹼至1毫升該光阻中。這相當於鹼之莫耳 濃度等於PAG莫耳濃度之10%。將此配方在2000 rpm下,旋 轉澆鑄於8英吋Si晶圓上,在120°C下PB 60秒後,產生薄膜 厚度2087 A。如上述使此薄膜曝光與顯像。然後,在 JEOL 7550 SEM中檢查所形成之影像,發現在曝光劑量52 毫焦耳/平方公分下,顯示至少低達60奈米之特徵。此 等特徵亦使用Hitachi 4500 SEM,以橫截面檢查,100奈米1 : 2線條與間隙係經良好地解析,並顯示良好線條分佈,如 同60奈米1 : 5線條與間隙之情況。此等結果証實此乙烯 基加成聚合體,當與所添加之鹼一起調配時,可在亞100 奈米解析下成像,具有薄膜厚度超過200奈米。Example 9B uses the same polymer formulation, but adds 38 microliters of 0.5% by weight tetrabutylammonium lactate (TBALac) base to 1 ml of this photoresist. This corresponds to a molar concentration of alkali equal to 10% of the molar concentration of PAG. This formulation was spin-cast on an 8-inch Si wafer at 2000 rpm. After 60 seconds of PB at 120 ° C, a film thickness of 2087 A was produced. The film was exposed and developed as described above. Then, the formed image was examined in a JEOL 7550 SEM, and it was found that at an exposure dose of 52 mJ / cm2, it showed characteristics as low as 60 nm. These features are also examined with a Hitachi 4500 SEM in cross section. The 100 nm 1: 2 lines and gaps are well resolved and show good line distribution, as in the case of 60 nm 1: 5 lines and gaps. These results confirm that this vinyl addition polymer, when formulated with the added base, can be imaged at sub-100 nm resolution and has a film thickness of more than 200 nm.

實例9C 使用所添加TBALac鹼之一半,進行另一項試驗,成像品 質顯示係在未具有外加鹼與10莫耳% PAG外加鹼之兩結果 中間。可解析100奈米1 : 5線條與間隙。Example 9C Using one and a half of the added TBALac base, another experiment was performed, and the imaging quality was shown to be in the middle of the results without the added base and 10 mole% PAG added base. Can analyze 100 nanometers 1: 5 lines and gaps.

實例9D 進行另一項試驗,其中係使用相同最初聚合體配方(樹 脂與PAG在2-庚酮中),但使用外加氫氧化四丁基銨 (TBAOH)之10莫耳% PAG,代替TBALac。所形成之影像顯 示100奈米1 : 3線條與間隙之解析。Example 9D Another experiment was performed in which the same initial polymer formulation (resin and PAG in 2-heptanone) was used, but 10 mole% PAG plus tetrabutylammonium hydroxide (TBAOH) was used instead of TBAlac. The resulting image shows a resolution of 100 nm 1: 3 lines and gaps.

實例9E 開架曝光(劑量對透光Ep之庹量,及光阻對比): -63- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Example 9E Open Frame Exposure (Dose vs. Transparency Ep and Photoresistance Comparison): -63- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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線 591338 A7 B7 五、發明説明(6〇 ) 再一次,於稍微較大規模下製備上述配方。將此光阻配 方在2000 rpm之速度下,旋轉澆鑄於8英吋Si晶圓上,於120 °C下PAB 60秒後,產生經度量厚度2169 A之薄膜。然後, 在Exitech步進器中,以10x10開架式樣,使用曝光劑量從0 改變至10毫焦耳/平方公分,以0.1毫焦耳/平方公分之 增量,使此薄膜曝光至157奈米輻射。於曝光後,使薄膜 在100°C下進行PEB 60秒,接著在Shipley LDD-26W中,進行 水坑顯像60秒。使用Prometrix干涉儀,檢查所形成之影 像,以度量在所有100個曝光劑量之位置處,於顯像後留 下之薄膜厚度。所形成之數據顯示,在曝光劑量7.4毫焦 耳/平方公分下,具有0%外加鹼之薄膜係完全被顯像劑 移除(Ε〇= 7.4毫焦耳/平方公分)。Line 591338 A7 B7 V. Description of the invention (60) Once again, the above formulation is prepared on a slightly larger scale. This photoresist compound was spin-cast on an 8-inch Si wafer at 2000 rpm, and after PAB at 120 ° C for 60 seconds, a film with a measured thickness of 2169 A was produced. Then, in an Exitech stepper, the film was exposed to 157 nm radiation in 10x10 open-frame format, using an exposure dose change from 0 to 10 mJ / cm2, in 0.1 mJ / cm2 increments. After exposure, the film was subjected to PEB at 100 ° C for 60 seconds, and then developed in a Shipley LDD-26W for puddle development for 60 seconds. Using a Prometrix interferometer, the resulting image was examined to measure the thickness of the film remaining after development at all 100 exposure dose locations. The data formed showed that at an exposure dose of 7.4 mJ / cm2, the film system with 0% plus alkali was completely removed by the developer (E0 = 7.4 mJ / cm2).

實例9F 製備第二種配方,其方式是採用4毫升上述相同溶液, 並添加至154微升0.5重量% TBALac在2-庚酮中之溶液内。 這會產生具有鹼濃度等於PAG濃度之10莫耳%之光阻配 方。將此光阻配方在2000 rpm之速度下,旋轉洗鑄於8英忖 Si晶圓上,於120°C下PAB 60秒後,產生經度量厚度2003 A 之薄膜。然後,在Exitech步進器中,以10x10開架式樣,使 用曝光劑量從0改變至30毫焦耳/平方公分,在0.3毫焦耳 /平方公分增量下,使此薄膜曝光至157奈米輻射。於曝 光後,使薄膜於l〇〇°C下進行PEB 60秒,接著在Shipley LDD-— 26W中進行水坑顯像60秒。使用Prometrix干涉儀檢查所形 成之影像,以度量於顯像後,在所有100個曝光劑量之位 -64- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Example 9F A second formulation was prepared by using 4 ml of the same solution described above and adding it to 154 microliters of a 0.5 wt% solution of TBALac in 2-heptanone. This results in a photoresist formulation having a base concentration equal to 10 mole% of the PAG concentration. This photoresist formula was spin-washed on an 8-inch Si wafer at 2000 rpm. After PAB at 120 ° C for 60 seconds, a film with a measured thickness of 2003 A was produced. Then, in an Exitech stepper, the film was exposed to 157 nm radiation in a 10x10 open-frame format using an exposure dose change from 0 to 30 mJ / cm2 in 0.3 mJ / cm2 increments. After the exposure, the film was subjected to PEB at 100 ° C for 60 seconds, followed by water-hole development in Shipley LDD-26W for 60 seconds. Examine the formed image with a Prometrix interferometer to measure all 100 exposure doses after development. -64- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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線 591338 A7 B7 五、發明説明(61 ) 置處,留下之薄膜厚度。所形成之數據顯示在曝光劑量 25.8毫焦耳/平方公分下,具有10%外加鹼之薄膜,係完 全被顯像劑移除(E0 = 25.8毫焦耳/平方公分)。Line 591338 A7 B7 V. Description of the invention (61) The thickness of the film left behind. The resulting data show that at a exposure dose of 25.8 mJ / cm², a film with 10% plus alkali was completely removed by the developer (E0 = 25.8 mJ / cm²).

實例9G 製備第三種配方,其方式是採用3毫升上述相同溶液, 並添加至90微升0.5重量% TBAOH在2-庚酮中之溶液内。這 產生具有鹼濃度等於PAG濃度之10莫耳%之光阻配方。將 此光阻配方在2000 rpm之速度下,旋轉澆鑄於8英吋Si晶圓 上,於120 °C下PAB 60秒後,產生經度量厚度2001 A之薄 膜。然後,在Exitech步進器中,以10x10開架式樣,使用曝 光劑量從0改變至30毫焦耳/平方公分,在0.3毫焦耳/平 方公分之增量下,使此薄膜曝光至157奈米輻射。於曝光 後,使薄膜於l〇〇°C下進行PEB 60秒,接著在Shipley LDD-26W中進行水坑顯像60秒。使用Prometrix干涉儀,檢查所 形成之影像,以度量於顯像後,在所有100個曝光劑量之 位置處,留下之薄膜厚度。所形成之數據顯示在曝光劑 量18.3毫焦耳/平方公分下,具有10%外加鹼之薄膜,係 完全被顯像劑移除(EQ= 18.3毫焦耳/平方公分)。 在所有情況中,使用外加鹼,數據証實當曝光於157奈 米光線時,光阻顯示高對比。高對比為在光阻中所期望 特徵之一,其可在半導體構圖中導致高解析度成像,而 此等乙烯基加成聚合體光阻配方各具有此期望性質。 -65- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Example 9G A third formulation was prepared by using 3 ml of the same solution described above and adding it to 90 microliters of a 0.5% by weight TBAOH solution in 2-heptanone. This results in a photoresist formulation having a base concentration equal to 10 mole% of the PAG concentration. This photoresist formulation was spin-cast on an 8-inch Si wafer at 2000 rpm, and after 60 seconds of PAB at 120 ° C, a film with a measured thickness of 2001 A was produced. Then, in an Exitech stepper, the film was exposed to 157 nm radiation in 10x10 open-frame format, using an exposure dose change from 0 to 30 mJ / cm², in increments of 0.3 mJ / cm². After the exposure, the film was subjected to PEB at 100 ° C for 60 seconds, followed by puddle development in Shipley LDD-26W for 60 seconds. Using a Prometrix interferometer, the resulting image was examined to measure the thickness of the film remaining at all 100 exposure dose positions after development. The data formed shows that at a dose of 18.3 mJ / cm², a film with 10% plus alkali was completely removed by the developer (EQ = 18.3 mJ / cm²). In all cases, with the addition of alkali, the data confirm that the photoresist displays a high contrast when exposed to 157 nm light. High contrast is one of the desired characteristics in photoresist, which can cause high resolution imaging in semiconductor patterning, and these vinyl addition polymer photoresist formulations each have this desired property. -65- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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Claims (1)

591338 A8 B8 C8 申請專利範圍 體氮化合物、聚合氨化合物、有機胺類、有機銨氫氧 化物,其與有機酸之鹽,及其混合物。 4·如申凊專利範圍第丨項之光阻組合物,其中界面活性劑 具有陽性、陰性或中性電荷。 5.如申請專利範圍第4項之光阻組合物,其中界面活性劑 係選自經氟化與未經氟化之界面活性劑。591338 A8 B8 C8 Patent application scope Nitrogen compounds, polymeric ammonia compounds, organic amines, organic ammonium hydroxides, salts with organic acids, and mixtures thereof. 4. The photoresist composition according to item 丨 of the patent application, wherein the surfactant has a positive, negative or neutral charge. 5. The photoresist composition according to item 4 of the patent application, wherein the surfactant is selected from fluorinated and non-fluorinated surfactants. 装 6·如申印專利範圍第1項之光阻組合物,其中聚合體在 157奈米之波長下,具有吸收係數低於5 〇微米· i。 7.如申請專利範圍第1項之光阻組合物,其中聚合體⑷ 為含氟共聚物,其包含衍生自至少一種乙婦系不飽和 化合物之重複單位,其特徵在於至少一種乙烯系不飽 和化合物為多環狀,且至少一種乙烯系不飽和化合物 含有至少一個氟原子,以共價方式連接至乙缔系不飽 和碳原子。6. The photoresist composition as described in the first item of the scope of the patent application, wherein the polymer has an absorption coefficient of less than 50 microns at a wavelength of 157 nanometers. 7. The photoresist composition according to item 1 of the patent application scope, wherein the polymer ⑷ is a fluorinated copolymer that includes repeating units derived from at least one ethylenically unsaturated compound, and is characterized by at least one ethylenic unsaturated The compound is polycyclic, and at least one ethylenically unsaturated compound contains at least one fluorine atom, and is covalently connected to an ethylenically unsaturated carbon atom. 8·如申請專利範圍第1項之光阻組合物,其中聚合體⑷ 為含氟共聚物’其包含衍生自至少一種多環狀乙埽系 不飽和化合物之重複單位,該化合物具有至少一個原 子或基團,選自包括氟原子、全氟烷基及全氟垸氧 基,其特徵在於該至少一個原子或基團係以共價方式 連接至碳原子’此碳原子係被包含在環結構内,並與 乙晞系不飽和化合物之各乙晞系不飽和碳原子藉由至 少一個以共價方式連接之碳原子分隔。 9·如申請專利範圍第1項之光阻組合物,其中聚合體⑦) 為含有經保護酸基之分枝狀聚合體,該聚合體包今— -67-8. The photoresist composition according to item 1 of the patent application range, wherein the polymer 氟 is a fluorinated copolymer 'which contains repeating units derived from at least one polycyclic ethylfluorene unsaturated compound, the compound having at least one atom Or a group selected from the group consisting of a fluorine atom, a perfluoroalkyl group, and a perfluorofluorenyl group, characterized in that the at least one atom or group is covalently connected to a carbon atom ', this carbon atom system is included in the ring structure And are separated from each ethylenic unsaturated carbon atom of the ethylenic unsaturated compound by at least one carbon atom connected in a covalent manner. 9. The photoresist composition according to item 1 of the scope of the patent application, wherein the polymer ii) is a branched polymer containing a protected acid group, and the polymer includes — -67- 591338 ABCD 六、申請專利範圍 或多個分枝鏈段,以化學方式沿著線性主鏈段連接。 ίο.如申請專利範圍第1項之光阻組合物,其中聚合體⑷ 係選自包括: (cl)一種含氟聚合體,其包含衍生自至少一種乙烯系 不飽和化合物之重複單位,該化合物含有氟基醇 官能基,具有以下結構: -C(Rf)(Rf〇〇H 其中Rf與Rf,為1至10個碳原子之相同或不同氟垸 基’或一起採用為(CF2)n,其中η為2至10 ; (c2)—種含氟共聚物’其包含衍生自至少一種乙缔系 不飽和化合物之重複單位,其特徵在於至少一種 乙缔系不飽和化合物為環狀或多環狀,至少一種 乙烯系不飽和化合物含有至少一個氟原子,以共 價方式連接至乙烯系不飽和碳原子,及至少一種 乙烯系不飽和化合物包含氟基醇官能基,具有以 下結構: -C(Rf )(Rf · )〇H 其中為1至10個碳原子之相同或不同氟燒 基,或一起採用為(CF2)n,其中η為2至10 ; (c3)—種含氟共聚物,其包含: (i)衍生自至少一種乙婦系不飽和化合物之重複 單位’該化合物含有至少三個氟原子,以共 價方式連接至兩個乙烯系不飽和碳原子;^ ⑼衍生自乙烯系不飽和化合物之重複單位,續 -68- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 8 8 8 8 A B c D 々、申請專利範圍 化合物包含氟基醇官能基,具有以下結構: -C(Rf)(Rf,)OH 其中Rf與Rf,為1至10個碳原子之相同或不同氟烷 基,或一起採用為(CF2)n,其中η為2至10 ; (c4) 一種含氟共聚物,其包含衍生自至少一種乙烯系 不飽和化合物之重複單位,該化合物含有氟基醇 官能基,具有以下結構: -ZCH2C(Rf)(Rf,)OH 其中Rf與Rf,為1至10個碳原子之相同或不同氟烷 基,或一起採用為(CF2)n,其中η為2至10;及Z為元素 週期表VA族或VIA族之元素; (c5) —種含氟聚合體,其包含以下結構:591338 ABCD VI. Patent Application Scope or multiple branched segments, chemically connected along the linear main segment. ο. The photoresist composition according to item 1 of the scope of patent application, wherein the polymer ⑷ is selected from the group consisting of: (cl) a fluorine-containing polymer comprising repeating units derived from at least one ethylenically unsaturated compound, the compound Contains a fluoroalcohol functional group and has the following structure: -C (Rf) (Rf00OH where Rf and Rf are the same or different fluorofluorenyl groups of 1 to 10 carbon atoms' or are used together as (CF2) n, Where η is 2 to 10; (c2)-a fluorinated copolymer 'comprising repeating units derived from at least one ethylenically unsaturated compound, characterized in that at least one ethylenically unsaturated compound is cyclic or polycyclic , At least one ethylenically unsaturated compound contains at least one fluorine atom, covalently connected to the ethylenically unsaturated carbon atom, and at least one ethylenically unsaturated compound contains a fluoroalcohol functional group, and has the following structure: -C ( Rf) (Rf ·) 〇H where 1 to 10 carbon atoms are the same or different fluorocarbon groups, or used together as (CF2) n, where η is 2 to 10; (c3)-a fluorine-containing copolymer, It contains: (i) Derived from at least one woman Repeating units of unsaturated compounds' This compound contains at least three fluorine atoms and is covalently connected to two ethylene-based unsaturated carbon atoms; ^ 重复 repeating units derived from ethylene-based unsaturated compounds, continued -68- this paper The scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 591338 8 8 8 8 AB c D 々, the scope of the patent application compound contains a fluoroalcohol functional group, and has the following structure: -C (Rf) (Rf, ) OH where Rf and Rf are the same or different fluoroalkyl groups of 1 to 10 carbon atoms, or are used together as (CF2) n, where η is 2 to 10; (c4) a fluorinated copolymer comprising a derivative From a repeating unit of at least one ethylenically unsaturated compound, the compound contains a fluoroalcohol functional group and has the following structure: -ZCH2C (Rf) (Rf,) OH where Rf and Rf are the same or 1 to 10 carbon atoms or Different fluoroalkyl groups, or (CF2) n, where η is 2 to 10; and Z is an element of Group VA or VIA of the periodic table; (c5) a fluorine-containing polymer, which contains the following structure: 其中各R4〇、R41、R42及R43係獨立為氫原子、鹵原 子、含有1至10個碳原子之烴基、經取代之烴基、烷氧 基、羧酸、羧酸酯或含有以下結構之官能基: -C(Rf)(Rf,)OR44 其中Rf與Rf •為1至10個碳原子之相同或不同氟烷 -69- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 591338 A8 B8 C8 D8 六 、申請專利範圍 基,或一起採用為(CF2)n,其中η為2至10 ; R44為氫原 子或酸-或驗-不安定保護基;V為重複單位在聚合體中 之數目;w為0-4;至少一種重複單位具有一種結構, 其中至少一種R40、R41、R42及R43含有結構為 C(Rf)(Rf.)OR44 ;及 (c6)—種聚合體,其包含: (iii)衍生自至少一種乙烯系不飽和化合物之重複 單位,該化合物含有氟基醇官能基,具有以 下結構: -C(Rf)(Rf,)OH 其中Rf與Rf,為1至10個碳原子之相同或不同氟烷 基,或一起採用為(CF2)n,其中η為2至10 ;及 (iv)衍生自至少一種具有以下結構之乙烯系不飽 和化合物之重複單位: (H)(R45)C=C(R46)(CN) 其中R45為氫原子或CN; R46為CrC8烷基、氫原子或 C02R47基團,其中1^7為Cl-C^基或氩原子。 11·如申請專利範圍第10項之光阻組合物,其中聚合體(c) 進一步包含間隔基,選自包括乙婦、晞煙、1,Γ-雙 取代烯烴、乙烯基醇類、乙烯基醚類及i,弘二烯類。 12·如申請專利範圍第1項之光阻組合物,其中聚合體(d) 進一步包含一或多種共單體CR51r5 2 =CR5 3 R5 4,其中各 — R51、R52、R53係獨立選自Η或F ,且其中R54係選自包 括-F、-CF3、-〇R)5,其中 R5 5 為 Cnp2n+1,其中 n = 1 至 -70- 本紙張尺度適用中國國豕標準(CNS) A4規格(210 x 297公爱) 591338 A BCD 六、申請專利範圍 3,-0H(當 R53 = H 時),及 α(當 R51、R52 及 R53 = F 時)。 13.如申請專利範圍第1項之光阻組合物,其中聚合體(d) 進一步包含非晶形乙烯基共聚物,選自包括CH2=CHCF3 與 CF2=CF2,以 1 : 2 至 2 : 1 比例;CH2=CHF 與 CF2=CFC1,以 1 : 2 至 2 : 1 比例;CH2=CHF 與 CC1H=CF2, 以1 : 2至2 : 1比例;全氟(2-亞甲基斗甲基-1,3-二氧伍圜) 以任何比例與全氟(2,2·二甲基-1,3-二氧伍圜烯);全氟(2-亞甲基-4-甲基-1,3-二氧伍圜)以任何比例與二氟亞乙 烯,其係為非晶形;及全氟(2-亞甲基斗甲基-1,3-二氧伍 圜)之均聚物。 14·如申請專利範圍第1項之光阻組合物,其中聚合體(e) 係選自包括 (el) —種聚合體,其包含: (i) 衍生自至少一種乙烯系不飽和化合物之重複單 位,該化合物包含乙烯基醚官能基並具有以下結 構: ch2=cho-r56 其中R56為經取代或未經取代之烷基、芳基、芳烷 基或烷芳基,具有1至20個碳原子;與 (ii) 衍生自至少一種具有以下結構之乙晞系不飽和化 合物之重複單位: (h)(r57)oc(r58)(cn) 其中R5 7為氫原子或氰基;R5 8為範圍從1至8個碳原 子之坑基’ C02 R? 9基團,其中R5 9為範圍從1至8個碳原 -71 - 本紙張尺度適用中國國家標準(CNS) A4規格(21G X 297公董) &quot; ' 591338 A8 B8 C8 __________D8_ 六 申請專利翻 ^~ ~ - 子之烷基,或氫原子;及 (iii)衍生自至少一種包含酸性基團之乙烯系不飽和化 合物之重複單位;及 (e2) —種聚合體,其包含: (i)竹生自至V 種乙缔系不飽和化合物之重複單 位,孩化合物包含乙烯基醚官能基與氟基醇官能 基,並具有以下結構: C(R6 0 )(R6 1 )=C(R6 2 &gt;〇-D-C(Rf )(Rf, )〇H 其中R60、R6i及R62係獨立為氫原子,範圍從丨至3 個碳原子之烷基;〇為至少一個原子,其係連接 乙烯基醚官能基,經過氧原子,至氣基醇官能基 之碳原子,Rf與Rf,為含有1至1〇個碳原子之相同 或不同氟垸基,或-起採用為(α32)η ,其中n為範 圍從2至10之整數;及 (H)衍生自至少一種具有以下結構之乙烯系不飽和化 合物之重複單位: (h)(r57)oc(r58)(cn) 其中R57為氫原子或氰基;R58為範圍從丨至8個碳原 子之烷基,C〇2R59基團,其中R59為範圍從1至8個碳原 子之燒基,或氫原子;及 (iii)衍生自至少一種包含酸性基團之乙缔系不飽和化 合物之重複單位。 •如申請專利範圍第1項之光阻組合物,其中光活性成份 係以化學方式結合至選自包括(a)至(e)之聚合體;及其 -72- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 591338 A8 B8 C8 _______D8 六 、申請專利範圍 — 一 ' 混合物。 16· —種製備光阻影像於基材上之方法,其包括以下順 序: (X)使光阻層以影像複製方式曝光,以形成經成像與未 經成像區域,其中光阻層係製自一種光阻組合物, 其包含: (A)聚合體,選自包括 (a) 含氟共聚物,其包含衍生自至少一種乙晞系 不飽和化合物之重複單位,其特徵在於該至 少一種乙缔系不飽和化合物為多環狀; (b) 含有經保護故基之分枝狀聚合體,該聚合體 包含一或多種分枝鍵段,以化學方式沿著線 性主鏈段連接; (c) 氟聚合體,其具有至少一個氟醇基,具有以 下結構: -C(Rf)(Rf,)OH 其中Rf與Rf·為1至10個碳原子之相同或不同氟燒 基,或一起採用為(CF2 )n,其中η為2至1〇 ; (d) 全氟(2,2- 一甲基-1,%二乳伍圜稀)或CX2 =CY之 非晶形乙烯基均聚物,其中X = F或CF ,且 Y - -H,或全氟(2,2-二甲基-i,3-二氧伍圜埽)與 CX2=CY2之非晶形乙烯基共聚物;及 (e) 含/氟基醇之聚合體’製自經取代或未柄 取代之乙烯基酸類;及 -73- 本紙張尺度適用中國國家標準(CMS) A4規格(210 X 297公釐) 591338 A8 B8Each of R40, R41, R42, and R43 is independently a hydrogen atom, a halogen atom, a hydrocarbon group containing 1 to 10 carbon atoms, a substituted hydrocarbon group, an alkoxy group, a carboxylic acid, a carboxylic acid ester, or a function having the following structure Base: -C (Rf) (Rf,) OR44 where Rf and Rf are the same or different halothanes of 1 to 10 carbon atoms -69- This paper size applies Chinese National Standard (CNS) A4 specifications (210X 297 mm ) 591338 A8 B8 C8 D8 VI. Apply for a patent scope, or use together as (CF2) n, where η is 2 to 10; R44 is a hydrogen atom or an acid- or iso-stable protecting group; V is a repeating unit during polymerization Number in the body; w is 0-4; at least one repeating unit has a structure, wherein at least one of R40, R41, R42 and R43 contains a structure of C (Rf) (Rf.) OR44; and (c6)-a kind of polymer Which includes: (iii) a repeating unit derived from at least one ethylenically unsaturated compound containing a fluoroalcohol functional group and having the following structure: -C (Rf) (Rf,) OH where Rf and Rf are 1 To 10 carbon atoms of the same or different fluoroalkyl groups, or taken together as (CF2) n, where η is 2 to 10; and (iv) derived Repeating unit of at least one ethylenically unsaturated compound having the following structure: (H) (R45) C = C (R46) (CN) where R45 is a hydrogen atom or CN; R46 is a CrC8 alkyl group, a hydrogen atom, or a C02R47 group Where 1 ^ 7 is a Cl-C ^ group or an argon atom. 11. The photoresist composition according to item 10 of the patent application, wherein the polymer (c) further comprises a spacer selected from the group consisting of Otome, fumes, 1, Γ-disubstituted olefins, vinyl alcohols, vinyl groups Ethers and i, diene. 12. The photoresist composition according to item 1 of the scope of patent application, wherein the polymer (d) further comprises one or more comonomers CR51r5 2 = CR5 3 R5 4, wherein each of-R51, R52, R53 is independently selected from Η Or F, and where R54 is selected from the group consisting of -F, -CF3, -〇R) 5, where R5 5 is Cnp2n + 1, where n = 1 to -70- This paper size applies to China National Standard (CNS) A4 Specifications (210 x 297 public love) 591338 A BCD VI. Patent application scope 3, -0H (when R53 = H), and α (when R51, R52 and R53 = F). 13. The photoresist composition according to item 1 of the patent application scope, wherein the polymer (d) further comprises an amorphous vinyl copolymer selected from the group consisting of CH2 = CHCF3 and CF2 = CF2 in a ratio of 1: 2 to 2: 1 ; CH2 = CHF and CF2 = CFC1, with a ratio of 1: 2 to 2: 1; CH2 = CHF and CC1H = CF2, with a ratio of 1: 2 to 2: 1; perfluoro (2-methylenetolmethyl-1 , 3-dioxofluorene) in any ratio with perfluoro (2,2 · dimethyl-1,3-dioxofluorene); perfluoro (2-methylene-4-methyl-1, 3-dioxofluorene) is in any proportion with difluorovinylidene, which is amorphous; and a homopolymer of perfluoro (2-methyleneoxymethyl-1,3-dioxofluorene). 14. The photoresist composition according to item 1 of the scope of patent application, wherein the polymer (e) is selected from the group consisting of (el) a polymer comprising: (i) a repeat derived from at least one ethylenically unsaturated compound Unit, the compound contains a vinyl ether functional group and has the following structure: ch2 = cho-r56 where R56 is a substituted or unsubstituted alkyl, aryl, aralkyl, or alkaryl group, having 1 to 20 carbons Atom; and (ii) a repeating unit derived from at least one ethylenic unsaturated compound having the following structure: (h) (r57) oc (r58) (cn) where R5 7 is a hydrogen atom or a cyano group; R5 8 is A pit group 'C02 R? 9 group ranging from 1 to 8 carbon atoms, of which R5 9 is a carbon atom ranging from 1 to 8 -71-This paper size applies Chinese National Standard (CNS) A4 specifications (21G X 297 (Public Director) &quot; '591338 A8 B8 C8 __________D8_ Six patents for patent application ^ ~~-alkyl groups, or hydrogen atoms; and (iii) repeating units derived from at least one ethylenically unsaturated compound containing an acidic group; And (e2) — a kind of aggregates, comprising: (i) bamboo species from V to B species And the repeating unit of the compound, the compound contains a vinyl ether functional group and a fluoroalcohol functional group, and has the following structure: C (R6 0) (R6 1) = C (R6 2 &gt; 〇-DC (Rf) (Rf ,) OH where R60, R6i, and R62 are independently hydrogen atoms, alkyl groups ranging from 丨 to 3 carbon atoms; 〇 is at least one atom, which is connected to the vinyl ether functional group, passes the oxygen atom, and reaches the gas group The carbon atoms of the alcohol functional group, Rf and Rf, are the same or different fluorenyl groups containing 1 to 10 carbon atoms, or-as (α32) η, where n is an integer ranging from 2 to 10; and (H) A repeating unit derived from at least one ethylenically unsaturated compound having the following structure: (h) (r57) oc (r58) (cn) where R57 is a hydrogen atom or a cyano group; R58 is a range from 丨 to 8 A carbon atom alkyl group, a C02R59 group, where R59 is an alkyl group ranging from 1 to 8 carbon atoms, or a hydrogen atom; and (iii) derived from at least one ethylenically unsaturated compound containing an acidic group The repeating unit of the photoresist composition according to item 1 of the patent application range, wherein the photoactive component is chemically bound to the photoresist composition. Including the aggregates of (a) to (e); and -72- This paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 591338 A8 B8 C8 _______D8 VI. Patent Application Scope-1 'Mixture . 16. · A method for preparing a photoresist image on a substrate, including the following sequence: (X) exposing the photoresist layer in an image copying manner to form imaged and unimaged areas, wherein the photoresist layer is made from A photoresist composition comprising: (A) a polymer selected from the group consisting of (a) a fluorinated copolymer comprising repeating units derived from at least one ethylenic unsaturated compound, characterized in that the at least one ethylenic The unsaturated compound is polycyclic; (b) a branched polymer containing a protected base, the polymer containing one or more branch bond segments, chemically connected along a linear main segment; (c) Fluoropolymer, which has at least one fluoroalcohol group, and has the following structure: -C (Rf) (Rf,) OH wherein Rf and Rf · are the same or different fluorocarbon groups of 1 to 10 carbon atoms, or are used together as (CF2) n, where η is 2 to 10; (d) perfluoro (2,2-monomethyl-1,% dilactate) or CX2 = CY amorphous vinyl homopolymer, where X = F or CF, and Y--H, or an amorphous vinyl group of perfluoro (2,2-dimethyl-i, 3-dioxolane) and CX2 = CY2 Polymers; and (e) / fluorinated alcohol-containing polymers' made from substituted or unsubstituted vinyl acids; and -73- This paper size applies to China National Standard (CMS) A4 (210 X 297 mm) (Centimeter) 591338 A8 B8 (B) 光活性成份;及 (C) 功旎性化合物,選自包括鹼或界面活性劑丨及 (Y)使具有經成像與未經成像區域之經曝光光阻層顯 像,以形成浮凸影像在基材上。 17. 如申請專利範圍第16項之方法,其中驗具有‘為5或 較大。 18. 如申請專利範圍第17項之方法其中鹼係選自單體氮 化合物、聚合氮化合物 '有機胺類、有機銨氫氧化 物’其與有機酸之鹽,及其混合物。 19. 如申請專利範圍第16項之方法,其中界面活性劑具有 陽性、陰性或中性電荷。 20. 如申μ專利範圍第19項之方法,其中界面活性劑係選 自經氟化與未經氟化之界面活性劑。 21. 如申請專利範圍第16項之方法,其中聚合體在I”奈米 之波長下具有吸收係數低於5.0微米 22·如申請專利範圍第之光阻組合物,其中含氟共聚物 (C4)之Z係為硫、氧、氮或磷。 23·如申請專利範圍第1項之光阻組合物,其進一步包含溶 劑0 -74- 本紙張尺度適用中國國家標準(CNs) A4規格(210X 297公釐)(B) a photoactive component; and (C) a functional compound selected from the group consisting of an alkali or a surfactant, and (Y) developing an exposed photoresist layer having imaged and unimaged areas to form a floating The convex image is on the substrate. 17. The method of claim 16 in the scope of patent application, wherein the test has a value of 5 or greater. 18. The method according to claim 17 in which the base is selected from the group consisting of monomeric nitrogen compounds, polymeric nitrogen compounds 'organic amines, organic ammonium hydroxide', salts thereof with organic acids, and mixtures thereof. 19. The method of claim 16 in which the surfactant has a positive, negative, or neutral charge. 20. The method of claim 19, wherein the surfactant is selected from fluorinated and non-fluorinated surfactants. 21. The method according to item 16 of the patent application, wherein the polymer has an absorption coefficient of less than 5.0 microns at a wavelength of 1 ”nanometer. 22. The photoresist composition according to the application patent, wherein the fluorinated copolymer (C4 Z) is sulfur, oxygen, nitrogen, or phosphorus. 23. For example, the photoresist composition of the scope of application for the patent, which further contains a solvent 0 -74- This paper size applies Chinese National Standards (CNs) A4 specifications (210X (297 mm) 装 訂 公告本 l h 申請曰ϋ 75.IL ^ 案 號 090129535 類 別 6i〇2&gt;F Α4 C4 修正補充 中文說明書替換本(92年2月)591338 以上各欄由本局填註) f1專利説明書 -、S名稱 中 文 鹼及界面活性劑及彼等於微影蝕刻之光阻組合物之用途 英 文 BASES AND SURFACTANTS AND THEIR USE IN PHOTORESIST COMPOSITIONS FOR MICROLITHOGRAPHY 姓 名 國 籍 1. 賴瑞 L. 2. 邁可卡爾克勞富MICHAEL KARL CRAWFORD 3. 法蘭克 L.夏德,三世 FRANKL. SCHADT,III 4. 佛萊卓克克勞斯蘇斯塔,二世 FREDRICK CLAUS ZUMSTEG, JR. 均美國 一 發明 &lt;創作 人 住、居所 姓 名 (名稱) 國 籍 1 ·美國賓州恰德斯福市美鎮路596號 2. 美國賓州葛蘭坊市傑瑞米柯菜路26號 3. 美國德來懷州威明镇市德來懷大道2407號 4·美國德來懷州威明頓市銀邊路2715號 美商杜邦股份有限公司 E. I. DU PONT DE NEMOURS AND COMPANY 美國 裝 訂 線 三、申請人 美國德來懷州威明頓市馬卡第街丨〇 〇 7號 馬瑞安.迪.麥克奈海 MIRIAM D. MECONNAHEYBinding Bulletin lh Application No. 75.IL ^ Case No. 090129535 Class 6i02 &gt; F Α4 C4 Amendment Supplementary Chinese Manual Replacement (February 1992) 591338 The above columns are filled by the Office) f1 Patent Specification-、 S name Chinese alkali and surfactant and photoresist composition for photolithography etc. English BASES AND SURFACTANTS AND THEIR USE IN PHOTORESIST COMPOSITIONS FOR MICROLITHOGRAPHY Name Nationality 1. Larry L. 2. Michael Carl Crawford MICHAEL KARL CRAWFORD 3. Frank L. Schrader, III FRANKL. SCHADT, III 4. Fletcher Klaus Susta, II FREDRICK CLAUS ZUMSTEG, JR. All American inventions &lt; name of creator, residence ( Name) Nationality 1 · No. 596, Meizhen Road, Chadsford, Pennsylvania, USA 2. No. 26 Jeremy Kecai Road, Granville, Pennsylvania, USA 3. Delaihuai Avenue, Weiming Town, Delaihuai, USA 2407 No. 4 · EI DU PONT DE NEMOURS AND COMPANY US DuPont Co., Ltd. 2715 Yinbian Road, Wilmington, Germany Come to Markard Street, Wilmington, Huaizhou 丨 〇 〇 7 Marian. Di. McNeihai MIRIAM D. MECONNAHEY Say A8 B8 C8 D8 1. 一種光阻組合物,其包含: (A)—種聚合體,選自包括: (a)含氟共聚物’其包含衍生自至少一種乙婦系不飽 和化合物之重複單位,其特徵在於該至少一種乙 烯系不飽和化合物為多環狀; ⑻含有經保護酸基之分枝狀聚合體,該聚合體包含 一或多個分枝鏈段,以化學方式沿著線性主鏈段 連接; (c)氟聚合體,具有至少一個氟醇基,其具有以下結 構: 其中Rf與Rf,為1至10個碳原子之相同或不同氟嫁 基,或一起採用為(CF2)n,其中11為2至10; (d) 全氟(2,2-二甲基-1,3-二氧伍圜缔)或Cx2=Cy2之非晶 形乙烯基均聚物,其中X == F或CF3,且Y = ,或 全氟(2,2-二甲基-1,3-二氧伍圜烯)與Cx2=Cy2之非晶 形乙烯系共聚物;及 (e) 含腈/氟基醇之聚合體,製自經取代或未經取代 之乙晞基醚;及 (B) 至少一種光活性成份;及 (C) 一種功能性化合物,選自包括鹼與界面活性劑。 2·如申請專利範圍第1項之光阻組合物,其中驗具有— 為至少5。 3.如申請專利範圍第2項之光阻組合物,其中驗係選自單 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)A8 B8 C8 D8 1. A photoresist composition comprising: (A) a polymer selected from the group consisting of: (a) a fluorinated copolymer comprising repeating units derived from at least one ethylenically unsaturated compound , Characterized in that the at least one ethylenically unsaturated compound is polycyclic; ⑻ a branched polymer containing a protected acid group, the polymer containing one or more branched segments, chemically along a linear main Segment connection; (c) Fluoropolymer with at least one fluoroalcohol group, which has the following structure: where Rf and Rf are the same or different fluoroalkyl groups of 1 to 10 carbon atoms, or used together as (CF2) n, where 11 is 2 to 10; (d) Perfluoro (2,2-dimethyl-1,3-dioxolane) or Cx2 = Cy2 amorphous vinyl homopolymer, where X == F or CF3, and Y =, or an amorphous ethylene-based copolymer of perfluoro (2,2-dimethyl-1,3-dioxolene) and Cx2 = Cy2; and (e) nitrile / fluorine-containing A polymer of an alcohol based on a substituted or unsubstituted ethenyl ether; and (B) at least one photoactive ingredient; and (C) a functional compound selected from the group consisting of a base Surfactant. 2. The photoresist composition according to item 1 of the patent application scope, wherein the photoresist composition is at least 5. 3. The photoresist composition according to item 2 of the scope of patent application, in which the inspection system is selected from a single paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
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