WO2002037543A3 - Method and apparatus for cleaning a deposition chamber - Google Patents

Method and apparatus for cleaning a deposition chamber Download PDF

Info

Publication number
WO2002037543A3
WO2002037543A3 PCT/US2001/048051 US0148051W WO0237543A3 WO 2002037543 A3 WO2002037543 A3 WO 2002037543A3 US 0148051 W US0148051 W US 0148051W WO 0237543 A3 WO0237543 A3 WO 0237543A3
Authority
WO
WIPO (PCT)
Prior art keywords
deposition chamber
time period
cleaning
cleaning cycle
target
Prior art date
Application number
PCT/US2001/048051
Other languages
French (fr)
Other versions
WO2002037543A2 (en
Inventor
Ingo Wilke
Hoa T Kieu
Walter Schoenleber
Original Assignee
Applied Materials Inc
Ingo Wilke
Hoa T Kieu
Walter Schoenleber
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Ingo Wilke, Hoa T Kieu, Walter Schoenleber filed Critical Applied Materials Inc
Priority to AU2002230793A priority Critical patent/AU2002230793A1/en
Publication of WO2002037543A2 publication Critical patent/WO2002037543A2/en
Publication of WO2002037543A3 publication Critical patent/WO2002037543A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method is provided that includes sputtering a target located within a deposition chamber for a first time period to deposit a flux of target material on a production substrate located within the deposition chamber. The method further includes removing the production substrate from the deposition chamber, and performing a cleaning cycle within the deposition chamber. The cleaning cycle may include (1) placing a non-production object into the deposition chamber; either (2i) sputtering the target for a second time period, which is of shorter duration that the first time period, to deposit a flux of target material on the non-production object; or (2ii) simply flowing a gas into the deposition chamber for a second time period which is of shorter duration than the first time period; and (3) evacuating the deposition chamber. The cleaning cycle may be repeated one or more times. Apparatus are provided for performing the above-described method.
PCT/US2001/048051 2000-10-31 2001-10-30 Method and apparatus for cleaning a deposition chamber WO2002037543A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002230793A AU2002230793A1 (en) 2000-10-31 2001-10-30 Method and apparatus for cleaning a deposition chamber

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70269700A 2000-10-31 2000-10-31
US09/702,697 2000-10-31

Publications (2)

Publication Number Publication Date
WO2002037543A2 WO2002037543A2 (en) 2002-05-10
WO2002037543A3 true WO2002037543A3 (en) 2003-03-27

Family

ID=24822237

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/048051 WO2002037543A2 (en) 2000-10-31 2001-10-30 Method and apparatus for cleaning a deposition chamber

Country Status (2)

Country Link
AU (1) AU2002230793A1 (en)
WO (1) WO2002037543A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0441368A1 (en) * 1990-02-09 1991-08-14 Applied Materials, Inc. Method and device for removing excess material from a sputtering chamber
US5380414A (en) * 1993-06-11 1995-01-10 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor
JPH0892764A (en) * 1994-09-22 1996-04-09 Nec Kyushu Ltd Sputtering device
US5784799A (en) * 1990-08-29 1998-07-28 Hitachi, Ltd. Vacuum processing apparatus for substate wafers
EP0869199A1 (en) * 1997-03-31 1998-10-07 Applied Materials, Inc. Chamber design with isolation valve to preserve vacuum during maintenance
EP0884401A1 (en) * 1997-06-11 1998-12-16 Applied Materials, Inc. Method and system for coating the inside of a processing chamber

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0441368A1 (en) * 1990-02-09 1991-08-14 Applied Materials, Inc. Method and device for removing excess material from a sputtering chamber
US5784799A (en) * 1990-08-29 1998-07-28 Hitachi, Ltd. Vacuum processing apparatus for substate wafers
US5380414A (en) * 1993-06-11 1995-01-10 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor
JPH0892764A (en) * 1994-09-22 1996-04-09 Nec Kyushu Ltd Sputtering device
EP0869199A1 (en) * 1997-03-31 1998-10-07 Applied Materials, Inc. Chamber design with isolation valve to preserve vacuum during maintenance
EP0884401A1 (en) * 1997-06-11 1998-12-16 Applied Materials, Inc. Method and system for coating the inside of a processing chamber

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 08 30 August 1996 (1996-08-30) *

Also Published As

Publication number Publication date
AU2002230793A1 (en) 2002-05-15
WO2002037543A2 (en) 2002-05-10

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Legal Events

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DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
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